3218205

Information

• Patent Grant
• 3218205

• References
• Source

• Patent Number

  3,218,205

• Date Filed

  Not available

• Date Issued

  Tuesday, November 16, 1965
  59 years ago

• CPC

  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B25/02 - Epitaxial-layer growth
  • H01L21/0237 - Materials
  • H01L21/02392 - Phosphides
  • H01L21/02395 - Arsenides
  • H01L21/02543 - Phosphides
  • H01L21/02546 - Arsenides
  • H01L21/02549 - Antimonides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • Y10S148/005 - Antimonides of gallium or indium
  • Y10S148/017 - Clean surfaces
  • Y10S148/056 - Gallium arsenide
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/072 - Heterojunctions
  • Y10S148/11 - Metal-organic CVD, ruehrwein type
  • Y10S252/951 - for vapor transport
  • Y10S438/933 - Germanium or silicon or Ge-Si on III-V

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 023 - Chemistry: physical processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process