3224913

Information

• Patent Grant
• 3224913

• References
• Source

• Patent Number

  3,224,913

• Date Filed

  Not available

• Date Issued

  Tuesday, December 21, 1965
  59 years ago

• CPC

  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • C01B25/06 - Hydrogen phosphides
  • C01B25/088 - containing plural metal
  • C01G31/00 - Compounds of vanadium
  • C22C1/007 - Preparing arsenides or antimonides, especially of the III-VI-compound type
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/0237 - Materials
  • H01L21/02395 - Arsenides
  • H01L21/02543 - Phosphides
  • H01L21/02546 - Arsenides
  • H01L21/02549 - Antimonides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/185 - Joining of semiconductor bodies for junction formation
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • Y10S148/049 - Equivalence and options
  • Y10S148/056 - Gallium arsenide
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/067 - Graded energy gap
  • Y10S148/072 - Heterojunctions
  • Y10S148/11 - Metal-organic CVD, ruehrwein type
  • Y10S148/119 - Phosphides of gallium or indium
  • Y10S148/12 - Photocathodes-Cs coated and solar cell
  • Y10S148/142 - Semiconductor-metal-semiconductor
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S252/951 - for vapor transport
  • Y10S438/925 - Fluid growth doping control
  • Y10S438/933 - Germanium or silicon or Ge-Si on III-V
  • Y10S438/936 - Graded energy gap

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 136 - Batteries: thermoelectric and photoelectric
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process