3837907

Information

• Patent Grant
• 3837907

• References
• Source

• Patent Number

  3,837,907

• Date Filed

  Not available

• Date Issued

  Tuesday, September 24, 1974
  50 years ago

• CPC

  • H01L21/76897 - Formation of self-aligned vias or contact plugs
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/288 - from a liquid
  • H01L21/2885 - using an external electrical current
  • H01L23/291 - Oxides or nitrides or carbides
  • H01L23/4855 - Overhang structure
  • H01L24/02 - Bonding areas ; Manufacturing methods related thereto
  • H01L29/42396 - for charge coupled devices
  • H01L29/66954 - with an insulated gate
  • H01L2924/01005 - Boron [B]
  • H01L2924/01006 - Carbon [C]
  • H01L2924/01013 - Aluminum [Al]
  • H01L2924/01014 - Silicon [Si]
  • H01L2924/01022 - Titanium [Ti]
  • H01L2924/01033 - Arsenic [As]
  • H01L2924/01039 - Yttrium [Y]
  • H01L2924/01046 - Palladium [Pd]
  • H01L2924/01072 - Hafnium [Hf]
  • H01L2924/01074 - Tungsten [W]
  • H01L2924/01075 - Rhenium [Re]
  • H01L2924/01078 - Platinum [Pt]
  • H01L2924/01079 - Gold [Au]
  • H01L2924/01084 - Polonium [Po]
  • H01L2924/1306 - Field-effect transistor [FET]
  • H01L2924/14 - Integrated circuits
  • Y10S438/944 - Shadow

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 257 - Active solid-state devices