Claims
- 1. A semiconductor structure formed in a substrate comprising silicon comprising:
a plurality of semiconductor devices formed in the silicon layer; and a conformal layer of diamond deposited at the top surface of the substrate.
- 2. The structure of claim 1 further comprising a plurality of thermal connectors disposed at the diamond layer.
- 3. The structure of claim 2 wherein at least one of said plurality of thermal connectors is disposed in a hole in said diamond layer and in electrical connection to at least one of said plurality of semiconductor devices.
- 4. A semiconductor structure comprising:
a first chip comprising at least one semiconductor component formed in a silicon substrate and having a first surface and a second surface; a first chip diamond layer disposed on said second surface; at least one connector formed at said second surface of said first chip; and a bonded structure having a first bonded structure surface bonded to said at least one connector and a second bonded structure surface.
- 5. The structure of claim 4 wherein said bonded structure additionally comprises a second bonded structure diamond layer disposed on said first bonded structure surface.
- 6. The structure of claim 5 wherein said bonded structure comprises at least one bonding site and wherein said second diamond layer comprises a conformal layer having a pattern of at least one hole for exposing said at least one bonding site.
- 7. The structure of claim 4 further comprising an intermediate diamond layer disposed between said first chip and said bonded structure.
- 8. The structure of claim 7 wherein said intermediate diamond layer additionally comprises a plurality of heat conduction channels disposed in said intermediate diamond layer.
- 9. The structure of claim 8 further comprising cooling fluid disposed in said heat conduction channels.
- 10. The structure of claim 5 further comprising an intermediate diamond layer disposed between said first chip and said bonded structure.
- 11. The structure of claim 10 wherein said intermediate diamond layer additionally comprises a plurality of heat conduction channels disposed in said intermediate diamond layer.
- 12. The structure of claim 11 further comprising cooling fluid disposed in said heat conduction channels.
- 13. The structure of claim 6 further comprising an intermediate diamond layer disposed between said first chip and said bonded structure.
- 14. The structure of claim 13 wherein said intermediate diamond layer additionally comprises a plurality of heat conduction channels disposed in said intermediate diamond layer.
- 15. The structure of claim 14 further comprising cooling fluid disposed in said heat conduction channels.
- 16. The structure of claim 4 wherein said at least one connector comprises a first plurality of electrical connectors and a second plurality of thermal connectors.
- 17. The structure of claim 4 wherein said at least one connector comprises at least two connectors and further comprising a second chip bonded to said first chip by at least one of said at least two connectors.
- 18. The structure of claim 4 further comprising a heat sink bonded to the second surface of said first chip.
- 19. The structure of claim 17 further comprising a heat sink bonded to the second surface of said first chip.
- 20. The structure of claim 19 wherein said bonded structure comprises at least one additional connector at its second bonded structure surface and further comprising a printed circuit card connected to said at least one additional connector.
- 21. A method for providing cooling with respect to at least one semiconductor device formed in a silicon substrate having a first surface and a second surface comprising the steps of;
providing a diamond layer at the first surface in thermal contact with the at least one semiconductor device; and conducting heat from the at least one semiconductor device along said layer.
- 22. The method of claim 21 wherein said providing a diamond layer comprises the steps of:
conformally depositing said layer by hot filament chemical vapor deposition using methane and hydrogen.
- 23. A method for fabricating a semiconductor structure having thermal cooling in a semiconductor substrate having a first and a second surface comprising the steps of:
forming a plurality of devices in said silicon substrate; and depositing a diamond layer at said first surface of said substrate.
- 24. The method of claim 23 depositing comprises depositing diamond by chemical vapor deposition from methane and hydrogen gases.
- 25. The method of claim 23 further comprising forming a pattern comprising a plurality of holes in said diamond layer.
- 26. The method of claim 25 further comprising depositing a plurality of solder balls into said plurality of holes.
- 27. The method of claim 26 further comprising bonding at least one of said plurality of solder balls to a second bonding structure.
- 28. The method of claim 27 wherein said second bonding structure comprises a substrate having at least one bonding site and a second diamond layer, said second diamond layer having a pattern of at least one hole for exposing said at least one bonding site for bonding to said at least one of said plurality of solder balls.
- 29. The method of claim 28 further comprising providing an intermediate layer of diamond between said first and said second diamond layers.
- 30. The method of claim 29 further comprising providing a plurality of cooling channels in said intermediate layer.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is related to U.S. patent application, Ser. No. 09/362,399 (Docket YO999-079), entitled “Method and Structure for Providing Improved Thermal Conduction for Silicon Semiconductor Devices”, which was filed on Jul. 28, 1999 and is assigned to the present assignee.
[0002] The present application is also related to U.S. patent application Ser. No. 09/006,575, of Joshi, et al, entitled “Embedded Thermal Conductors for Semiconductor Chips”, filed on Jan. 13, 1998 and currently under allowance, and its divisional case Seri. No. 09/296,846 filed Apr. 22, 1999, both of which are assigned to the present assignee.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09449886 |
Nov 1999 |
US |
Child |
10041639 |
Jan 2002 |
US |