Claims
- 1. A clustertool system for forming substrates, said clustertool including a memory comprising:
a code directed to providing a donor substrate; a code directed to placing said donor substrate in a first chamber; a code directed to introducing particles through a surface of said donor substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth; a code directed to placing said donor substrate in a second chamber and joining said donor substrate to a target substrate, said surface of said donor substrate facing a face of said target substrate to form a multi-layered substrate; a code directed to placing said multi-layered substrate in a third chamber; and a code directed to providing energy to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said substrate material to be removed from said substrate.
- 2. The system of claim 1 wherein said code directed to introducing turns on a step(s) of beam line ion implantation.
- 3. The system of claim 1 wherein said code directed to introducing turns on a step(s) of plasma immersion ion implantation.
- 4. The system of claim 1 wherein said particles are derived from hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds, and other light atomic mass particles.
- 5. The system of claim 1 wherein said particles are selected from the group consisting of neutral or charged molecules or atoms, or electrons.
- 6. The system of claim 1 wherein said particles are energetic.
- 7. The system of claim 6 wherein said energetic particles have sufficient kinetic energy to penetrate through said surface to said selected depth underneath said surface.
- 8. The system of claim 1 wherein said code directed to providing energy sustains said controlled cleaving action to remove said substrate material from said donor substrate to provide a film of material.
- 9. The system of claim 1 wherein said code directed to providing energy increases a controlled stress in said substrate material and sustains said controlled cleaving action to remove said substrate material from said donor substrate to provide a film of material.
- 10. The system of claim 1 further comprising a code directed to providing additional energy to said donor substrate to sustain said controlled cleaving action to remove said substrate material from said donor substrate to provide a film of material.
- 11. The system of claim 1 further comprising a code directed to providing additional energy to said donor substrate to increase a controlled stress in said substrate material and sustains said controlled cleaving action to remove said substrate material from said donor substrate to provide a film of material.
- 12. The system of claim 1 further comprising a code directed to increasing an energy level of said donor substrate while substantially preventing a possibility of cleaving said substrate material at said selected depth.
- 13. The system of claim 1 further comprising a code directed to increasing a stress of said substrate while substantially preventing a possibility of cleaving said donor substrate at said selected depth.
- 14. The system of claim 1 wherein said energy is provided by a thermal source or sink, a mechanical source, a chemical source, and an electrical source.
- 15. The system of claim 14 wherein said chemical source is selected from particles, fluids, gases, or liquids.
- 16. The system of claim 14 wherein said chemical source includes a chemical reaction.
- 17. The system of claim 16 wherein said chemical source is selected from flood, time-varying, spatially varying, or continuous.
- 18. The system of claim 14 wherein said mechanical source is derived from rotational, translational, compressional, expansional, or ultrasonic.
- 19. The system of claim 14 wherein said mechanical source is selected from flood, time-varying, spatially varying, or continuous.
- 20. The system of claim 14 wherein electrical source is selected from a group consisting of an applied voltage or an applied electro-magnetic field.
- 21. The system of claim 14 wherein said electrical source is selected from flood, time-varying, spatially varying, or continuous.
- 22. The system of claim 14 wherein said thermal source or sink is selected from radiation, convection, or conduction.
- 23. The system of claim 22 wherein said thermal source is selected from a photon beam, a fluid jet, a liquid jet, a gas jet, an electromagnetic field, a gas jet, an electron beam, a thermoelectric heating, and a furnace.
- 24. The system of claim 22 wherein said thermal sink is selected from a fluid jet, a liquid jet, a gas jet, a cryogenic fluid, a super-cooled liquid, a thermo-electric cooling means, and an electro/magnetic field.
- 25. The system of claim 22 wherein said thermal source is selected from flood, time-varying, spatially varying, or continuous.
- 26. The system of claim 1 further comprising a code directed to maintain said substrate at a temperature ranging between −200° C. and 450° C.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present patent application claims priority to U.S. Ser. No. 60/054,131 filed Jul. 29, 1997, in the name of Henley et al., and assigned to Silicon Genesis Corporation. The present application is also being filed concurrently with two of the three applications shown below.
[0002] 1. U.S. Patent Application No. ______ (Attorney Docket No. 18419-000310), in the name of Henley, et al., and assigned to Silicon Genesis Corporation;
[0003] 2. U.S. Patent Application No. ______ (Attorney Docket No. 18419-000320), in the name of Henley, et al., and assigned to Silicon Genesis Corporation; and
[0004] 3. U.S. Patent Application No. ______ (Attorney Docket No. 18419-000330), in the name of Henley, et al., and assigned to Silicon Genesis Corporation
[0005] The two applications, which do not include the present application, are hereby incorporated by reference. All three applications including the present application are being filed on the same date.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60054131 |
Jul 1997 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09124156 |
Jul 1998 |
US |
Child |
10011271 |
Oct 2001 |
US |