The present disclosure relates to integrated circuit (IC); more particularly, relates to filling notches or apertures with a conductive material on layering a first chip and a second chip by using circuit contacts and the notches or apertures to connect IC chips together with wires for achieving flexibility of circuit layout, easy fabrication and enhanced reliability.
A conventional IC integrating technique, as shown in
Even through the above conventional technique can communicate the fourth and the fifth chips 400,500 by conductive wires 60; however, it can only layer chips of the same size through a crossing connect method along edges of the fourth and the fifth chips 400,500. It limited system design and makes integration difficult because of lacking of flexibility. Moreover, it's hard to detect error owing to complex produce procedure, so that it increases product rejection rate.
Although the above prior art can be electrically connected with outside circuit with ease, its connection with the outside circuit is only on one surface. On piling up the chips, a plurality of apertures is required and a conductive material has to be filled into the apertures for connecting two surfaces. Therein, a tool is used to drill out the apertures on the chips; then, an insulative layer is formed on each wall of the apertures through printing, coating, jet printing, chemical vapor deposition (CVD), physical vapor deposition (PVD), sputtering, electroplating or electroless plating, so as to prevent the chips from short cut; and, then, the conductive material is filled into the apertures to connect two surfaces of the chips.
However, because the insulative layer has to be formed after the drilling and the conductive material has to be filled in, the fabrication becomes complicated with low yield and bad reliability. Hence, the prior art does not fulfill all users' requests on actual use.
The main purpose of the present disclosure is to filling notches or apertures with a conductive material on layering at least two chips with circuit contacts and the notches or apertures to connect IC chips for achieving flexibility of circuit layout, easy fabrication and improved reliability.
To achieve the above purpose, the present disclosure is a layered integrated circuit apparatus, comprising a first chip and a second chip, where the first chip has a plurality of first notches at edge; a first conductive area on a surface; a plurality of first apertures on the surface; and a first routing area on the surface to connect the notch or the aperture to the first conductive area; where a conductive material is formed in each of the first apertures; where the second chip is layered on the first chip; where the second chip has a plurality of second notches at edge corresponding to the first conductive area; a second conductive area on a surface; a plurality of second apertures on the surface; and a second routing area on the surface to connect the second notch or the second aperture to the second conductive area; where a conductive material is formed between the first conductive area and each of the second notches; where a conductive material is formed in each of the second apertures; and where the first apertures and the second apertures are formed through hot drilling with a first insulative layer and a second insulative layer formed on an inner surface of each of the first apertures and on an inner surface of each of the second apertures, respectively. Accordingly, a novel layered integrated circuit apparatus is obtained.
The present disclosure will be better understood from the following detailed descriptions of the preferred embodiments according to the present disclosure, taken in conjunction with the accompanying drawings, in which
The following descriptions of the preferred embodiments are provided to understand the features and the structures of the present disclosure.
Please refer to
The first chip 100 comprises a substrate 101; a circuit layer 102 on the substrate 101; an insulative layer 103 on the circuit layer 102; and a circuit layer 104 on the insulation layer 103. A plurality of first notches 10 is set at edge of the first chip 100. The first chip 100 has a first conductive area 11; a plurality of first apertures 12; and a first routing pool 13 connecting the first notch 10 or the first aperture 12 to the first conductive area 11. Therein, a conductive material 14, such as a conductive silver paste, is set in the first aperture 12. A plurality of first circuit contacts 111 is set in the first conductive area 11; and, a plurality of first conductive wires 131 is set in the first routing pool 13. The first conductive wires 131 not only connect the first notches 10 and/or the first apertures 12 to the first conductive area 11; but also are extended to the other side of the first chip 100.
The second chip 200 is layered on a side of the first chip 100. The second chip 200 comprises a substrate 201; a circuit layer 202 on the substrate 201; an insulative layer 203 on the circuit layer 202; and a circuit layer 204 on the insulative layer 203. A plurality of second notches 20 are set at edge of the second chip 200 and are corresponding to the first conductive area 11. A conductive material 24 is set between the second notches 20 and the first conductive area 11. The conductive material 24 can be a conductive silver paste. The second chip 200 has a second conductive area 21; a plurality of second apertures 22; and a second routing pool 23 connecting the second notch 20 or the second aperture 22 to the second conductive area 21. The conductive material 24 is set in the second apertures 22. A plurality of second circuit contacts 211 is set in the second conductive area 21; and a plurality of second conductive wires 231 is set in the routing area 23. The second conductive wire 231 not only connects the second notch 20 or the second aperture 22 to the second conductive area 21; but also can be extended to the other side of the second chip 200.
The first and the second chips 100,200 are made of silicon; doped silicon (e.g. boron-doped silicon); phosphorus; arsenic; or antimony, for forming an n-type or p-type material. The first aperture 12 in the first chip 100 and the second aperture 22 in the second chip 200 are formed in an oxygen environment by using a hot-drilling device, like a laser device. As shown in
On using the present disclosure, the second notches 20 are set around the edge of the second chip 200 and the second apertures 22 are corresponding to the first conductive area 11. With the conductive material 24 between the first conductive area 11 and the second notches 20 and that in the second apertures 22, the first and the second chips 100,200 together with the first and the second conductive wires 231 are electrically connected with each other through the second notches 20 and the second apertures 22 for conducting two faces of the first and the second chips 100,200.
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To sum up, the present disclosure is an integrated circuit layering device, where a system is integrated on a first and a second chips layered together for easy fabrication and enhanced reliability and stability.
The preferred embodiments herein disclosed are not intended to unnecessarily limit the scope of the disclosure. Therefore, simple modifications or variations belonging to the equivalent of the scope of the claims and the instructions disclosed herein for a patent are all within the scope of the present disclosure.