Claims
- 1. An integrated circuit device comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less.
- 2. The integrated circuit device of claim 1, wherein the hybrid material is a spin coated material.
- 3. The integrated circuit device of claim 2, wherein the hybrid material is a poly(organosiloxane).
- 4. The integrated circuit device of claim 2, wherein the hybrid material has a dielectric constant of 2.7 or less.
- 5. The integrated circuit device of claim 1, wherein the deposited hybrid material has a glass transition temperature of 200 C. or more.
- 6. The integrated circuit device of claim 5, wherein the deposited hybrid material has a glass transition temperature of 250 C. or more.
- 7. The integrated circuit device of claim 6, wherein the deposited hybrid material has a glass transition temperature of 310 C. or more.
- 8. The integrated circuit device of claim 1, wherein the hybrid layer has a dielectric constant of 2.5 or less.
- 9. The integrated circuit device of claim 1, wherein the hybrid material has a repeating -M-O-M-O- back-bone having an organic substituent bound to the backbone, the material having a molecular weight of from 500 to 100,000, where M is silicon and O is oxygen.
- 10. The integrated circuit device of claim 9, wherein the molecular weight is from 1500 to 30,000.
- 11. The integrated circuit device of claim 10, wherein the organic substituent is fully fluorinated.
- 12. The integrated circuit device of claim 11, wherein more than one different organic substituent is bound to the repeating -M-O-M- backbone, and wherein each organic substituent is fully or partially fluorinated.
- 13. The integrated circuit device of claim 12, wherein the hybrid material comprises organic cross linking groups between adjacent -M-O-M-O- strands.
- 14. The integrated circuit device of claim 13, wherein the organic cross linking groups are fully or partially fluorinated cyclobutane groups.
- 15. The integrated circuit device of claim 14, wherein the organic cross linking groups are perfluorinated groups.
- 16. The integrated circuit device of claim 9, wherein the organic substitutent is a single or multi ring aryl group or an alkyl group having from 1 to 4 carbons.
- 17. The integrated circuit device of claim 16, wherein the aryl or alkyl group is fluorinated or deuterated.
- 18. The integrated circuit device of claim 17, wherein the aryl or alkyl group is fluorinated.
- 19. The integrated circuit device of claim 18, wherein the organic substituent is a phenyl or fluorinated alkyl group having from 1 to 5 carbon atoms.
- 20. The integrated circuit device of claim 19, wherein the phenyl group is substituted with fluorinated methyl, ethyl or alkenyl groups.
- 21. The integrated circuit device of claim 20, wherein the hybrid material comprises a silicon oxide back-bone.
- 22. The integrated circuit device of claim 21, wherein the hybrid material comprises aryl substituents on the silicon oxide backbone.
- 23. The integrated circuit device of claim 21, wherein the hybrid material comprises alkyl substituents having from 1 to 4 carbons.
- 24. The integrated circuit device of claim 19, wherein the hybrid material comprises cyclobutane groups connecting adjacent silicon oxide strands in a three dimensional network.
- 25. The integrated circuit device of claim 24, wherein the hybrid material comprises methyl and phenyl groups.
- 26. The integrated circuit device of claim 14, wherein M is Si.
- 27. The integrated circuit device of claim 24, wherein the material is mixed with a solvent and a thermal initiator or photoinitiator prior to deposition.
- 28. The integrated circuit device of claim 27, wherein a photoinitiator is mixed with the material and solvent prior to spin on, the photoinitiator undergoing free radical formation when exposed to light so as to cause polymerization in the hybrid material.
- 29. The integrated circuit device of claim 22, wherein the electromagnetic energy is ultraviolet light.
- 30. The integrated circuit device of claim 29, wherein the ultraviolet light is directed on the hybrid layer via a mask so as to expose portions of the hybrid layer, and wherein the developer removes non-exposed portions of the hybrid layer.
- 31. The integrated circuit device of claim 9, wherein the hybrid material comprises fluorinated cross linking groups between M elements in a three dimensional -M-O-M-O- lattice.
- 32. The integrated circuit device of claim 31, wherein the organic cross linking groups are fully fluorinated.
- 33. The integrated circuit device of claim 9, comprising three or more different organic groups bound to the -M-O-M-O backbone.
- 34. The integrated circuit device of claim 1, wherein the hybrid material is a siloxane.
- 35. The integrated circuit device of claim 9, wherein the hybrid material comprises between 2 and 6 different organic substituents on an inorganic three dimensional backbone matrix.
- 36. The integrated circuit device of claim 9, wherein the molecular weight is from 500 to 5000.
- 37. The integrated circuit device of claim 36, wherein the molecular weight is from 500 to 3000.
- 38. The integrated circuit device of claim 31, wherein the repeating -M-O-M-O backbone is a three dimensional matrix.
- 39. The integrated circuit device of claim 1, wherein the material of the hybrid layer is hydrophobic and results, if exposed to water, in a water contact angle of 90 degrees or more.
- 40. The integrated circuit device of claim 1, wherein the hybrid material is formed by depositing at a temperature of 200 C. or less.
- 41. The integrated circuit device of claim 3, wherein the hybrid material is an annealed material.
- 42. The integrated circuit device of claim 3, wherein the hybrid material is deposited at a temperature of 150 C. or less.
- 43. The integrated circuit device of claim 1, wherein the substrate is a glass, quartz, semiconductor, ceramic or plastic substrate.
- 44. The integrated circuit device of claim 1, wherein the hybrid material is a result of chlorosilane precursors being hydrolyzed and condensed.
- 45. The integrated circuit device of claim 43, wherein the substrate is a semiconductor substrate.
- 46. The integrated circuit device of claim 43, wherein the substrate is a silicon or germanium substrate.
- 47. The integrated circuit device of claim 1, wherein the deposited hybrid material is capable of being heated in supercritical water vapor at 2 atm and at 120 C. for 2 hours without degradation.
- 48. The integrated circuit device of claim 1, wherein the hybrid material is a directly patterned material with an aspect ratio of at least 2:1.
- 49. The integrated circuit device of claim 48, wherein the hybrid material has an aspect ratio is at least 3:1.
- 50. The integrated circuit device of claim 49, wherein the deposited hybrid material has an aspect ratio is at least 10:1.
- 51. The integrated circuit device of claim 1, wherein the hybrid material has a glass transition temperature or 200 C. or greater.
- 52. The integrated circuit device of claim 1, wherein the hybrid material is perfluorinated.
- 53. The integrated circuit device of claim 1, wherein the hybrid material is comprised of less than 10% H.
- 54. The integrated circuit device of claim 53, wherein the hybrid material is comprised of less than 5% H.
- 55. The integrated circuit device of claim 1, wherein the hybrid material is patterned to form apertures and/or ridges having a feature size of 100 nm or less.
- 56. The integrated circuit device of claim 55, wherein the hybrid material has apertures and/or ridges having a feature size of 50 nm or less.
- 57. The integrated circuit device of claim 1, wherein the electrically conductive areas comprise aluminum.
- 58. The integrated circuit device of claim 1, wherein the electrically conductive areas comprise copper.
- 59. The integrated circuit device of claim 1, wherein the integrated circuit device is part of a copper damascene process.
- 60. The integrated circuit device of claim 1, wherein the hybrid material comprises organic cross linking groups.
- 61. The integrated circuit device of claim 60, wherein the hybrid material is a chemically mechanically polished material.
- 62. The integrated circuit device of claim 60, further comprising a passivation layer on the device.
- 63. The integrated circuit device of claim 60, comprising at least 4 layers, each layer comprising alternating regions of the hybrid material and an electrically conductive material.
- 64. The integrated circuit device of claim 1, that is within a computer controller.
- 65. The integrated circuit device of claim 1, wherein the organic substituent is an epoxy group.
- 66. The integrated circuit device of claim 1, wherein the organic substituent is an alkynyl group.
- 67. A computer comprising the integrated circuit device of claim 1.
- 68. A method for making an integrated circuit device comprising:
providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350 C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification.
- 69. The method of claim 68, wherein the hybrid material is deposited by spin coating.
- 70. The method of claim 68, wherein the deposited hybrid material has a glass transition temperature of 200 C. or more.
- 71. The method of claim 68, wherein the hybrid layer is patterned, the patterning of the hybrid layer comprises directing electromagnetic energy at the hybrid layer followed by providing a developer to remove portions of the hybrid layer.
- 72. The method of claim 68, wherein the hybrid material is formed with a repeating -M-O-M-O backbone having an organic substituent bound to the backbone, the material having a molecular weight of from 500 to 100,000, where M is silicon and O is oxygen.
- 73. The method of claim 72, wherein the organic substituent is fully fluorinated.
- 74. The method of claim 73, wherein more than one different organic substituent is bound to the repeating -M-O-M-O backbone, and wherein each organic substituent is fully or partially fluorinated.
- 75. The method of claim 74, wherein after exposure the hybrid material comprises organic cross linking groups between adjacent -M-O-M-O- strands.
- 76. The method of claim 68, wherein the hybrid material is exposed to electromagnetic radiation via a mask so as to selectively increase cross linking of the material and increase the molecular weight of the material in selected areas.
- 77. The method of claim 76, wherein the electromagnetic energy has a wavelength of from 13 nm to 700 nm.
- 78. The method of claim 76, wherein a developer is applied to remove material in unexposed areas.
- 79. The method of claim 75, wherein M is Si.
- 80. The method of claim 68, wherein the hybrid material is mixed with a solvent and a thermal initiator or photoinitiator prior to deposition.
- 81. The method of claim 76, wherein the electromagnetic energy is ultraviolet light.
- 82. The method of claim 68, wherein the material of the hybrid layer is hydrophobic and results, if exposed to water, in a water contact angle of 90 degrees or more.
- 83. The method of claim 68, wherein the hybrid material is formed by depositing at a temperature of 200 C. or less.
- 84. The method of claim 68, wherein the substrate is a semiconductor substrate.
- 85. The method of claim 68, wherein the deposited hybrid material is capable of being heated in super-critical water vapor at 2 atm and at 120 C. for 2 hours without degradation.
- 86. The method of claim 68, wherein the electrically conductive areas comprise aluminum.
- 87. The method of claim 68, wherein the electrically conductive areas comprise copper.
- 88. The method of claim 68, wherein the method is part of a copper damascene process.
- 89. The method of claim 78, wherein the electrically conductive material is deposited in the areas removed with the developer.
- 90. The method of claim 68, wherein the hybrid electrically insulating material comprises a silicon oxide backbone with methyl and phenyl groups bound thereto.
- 91. An integrated circuit made by the method of claim 68.
- 92. A dual damascene method for making an integrated circuit, comprising:
providing a first photosensitive hybrid organic inorganic dielectric material that is a negative tone material, and depositing the first hybrid material on a substrate as a first layer; polymerizing the first material in selected areas of the first layer; removing non-selected areas in the first layer with a developer to form first removed areas; providing a second photosensitive hybrid organic inorganic dielectric material that is a negative tone material, and depositing the second hybrid material as a second layer on the first layer and that extends into the first removed areas; polymerizing the second material in selected areas of the second layer; removing non-selected areas in the second layer with a developer to form second removed areas that comprise removed areas from both the first and second layers proximate to each other; and depositing an electrically conductive material into the removed areas of both the first and second layers.
- 93. The method of claim 92, further comprising depositing an intervening layer between the first and second layers.
- 94. The method of claim 93, wherein the intervening layer is a stop layer or adhesion promoting layer.
- 95. The method of claim 92, wherein the hybrid material of the first and second layers is the same
- 96. The method of claim 92, wherein the electrically conductive material comprises copper that undergoes chemical mechanical polishing after deposition.
- 97. The method of claim 92, further comprising depositing a mask layer before removing non-cross linked areas of the second layer including material that extends into the first removed areas of the first layer.
- 98. The method of claim 96, wherein the mask layer is a photosensitive etch stop layer.
- 99. The method of claim 97, wherein the mask layer is a hard ceramic layer.
- 100. The method of claim 99, wherein the mask layer is ceramic film comprising silicon, tantalum, tungsten or titanium.
- 101. The method of claim 99, wherein a photoresist is used to pattern the mask layer.
- 102. The method of claim 101, wherein the mask layer is RIE etched in areas proximate to the non-cross linked areas of the second layer.
- 103. The method of claim 102, wherein the electrically conductive material is chemically mechanically polished down to the mask layer.
- 104. The method of claim 92, wherein the hybrid material of the first or second layer is deposited by spin coating, spray coating or dip coating.
- 105. The method of claim 104, wherein the hybrid material of the first or second layer is deposited by spin coating.
- 106. The method of claim 104, wherein the hybrid material of the first or second layer is deposited by spray coating.
- 107. The method of claim 104, wherein the deposited hybrid material has a glass transition temperature of 200 C. or more.
- 108. The method of claim 107, wherein the deposited hybrid material has a glass transition temperature of 250 C. or more.
- 109. The method of claim 108, wherein the deposited hybrid material has a glass transition temperature of 310 C. or more.
- 110. The method of claim 92, wherein the hybrid material is formed with a repeating -M-O-M-O- backbone having an organic substituent bound to the backbone, the material having a molecular weight of from 500 to 100,000, where M is silicon and O is oxygen.
- 111. The method of claim 110, wherein the molecular weight is from 1500 to 3000.
- 112. The method of claim 110, wherein the organic substituent is fully fluorinated.
- 113. The method of claim 112, wherein more than one different organic substituent is bound to the repeating -M-O-M-O backbone, and wherein each organic substituent is fully or partially fluorinated.
- 114. The method of claim 113, wherein after exposure the hybrid material comprises organic cross linking groups between adjacent -M-O-M-O- strands.
- 115. The method of claim 114, wherein the organic cross linking groups are fully or partially fluorinated cyclobutane groups after cross linking.
- 116. The method of claim 115, wherein the organic cross linking groups are perfluorinated groups.
- 117. The method of claim 110, wherein the organic substitutent is a single or multi ring aryl group or an alkyl group having from 1 to 4 carbons.
- 118. The method of claim 117, wherein the aryl or alkyl group is fluorinated or deuterated.
- 119. The method of claim 117, wherein the aryl or alkyl group is fluorinated.
- 120. The method of claim 119, wherein the organic substituent is a fluorinated phenyl or fluorinated alkyl group having from 1 to 5 carbon atoms.
- 121. The method of claim 120, wherein the fluorinated phenyl group is substituted with fluorinated methyl, ethyl or alkenyl groups.
- 122. The method of claim 110, wherein the organic substituent is a straight or branched carbon chain.
- 123. The method of claim 110, wherein the organic substituent is an aryl group that is a single ring or polycyclic aromatic substituent.
- 124. The method of claim 123, wherein the organic substituent is a fully or partially fluorinated single ring or polycyclic aromatic substituent.
- 125. The method of claim 124, wherein either the organic substituent has one or two rings.
- 126. The method of claim 92, wherein the forming of the removed areas in the first and second layers is performed by exposing the layers to electromagnetic radiation via a mask so as to selectively cross link the material and increase the molecular weight of the material in selected areas.
- 127. The method of claim 126, wherein the electromagnetic energy has a wavelength of from 13 nm to 700 nm.
- 128. The method of claim 92, wherein the material for the first and second layers is deposited after mixing with a solvent.
- 129. The method of claim 128, wherein the solvent is selected from isopropanol, ethanol, methanol, THF, mesitylene, toluene, cyclohexanone, cyclopentanone, dioxane, methyl isobutyl ketone, or perfluorinated toluene.
- 130. The method of claim 110, wherein M is Si.
- 131. The method of claim 126, wherein the material is mixed with a solvent and a thermal initiator or photoinitiator prior to deposition.
- 132. The method of claim 131, wherein a photoinitiator is mixed with the material and solvent prior to spin on, the photoinitiator undergoing free radical formation when exposed to electromagnetic energy so as to cause polymerization in the hybrid material.
- 133. The method of claim 132, wherein the electromagnetic energy is ultraviolet light.
- 134. The method of claim 110, wherein the hybrid material comprises fluorinated cross linking groups between M elements in a three dimensional -M-O-M-O- lattice.
- 135. The method of claim 92, wherein the cross linking groups are fully fluorinated.
- 136. The method of claim 110, comprising three or more different organic groups bound to the -M-O-M-O- backbone.
- 137. The method of claim 92, wherein the cross linking group is vinyl.
- 138. The method of claim 111, wherein the molecular weight is from 500 to 5000.
- 139. The method of claim 110, wherein the organic group is the cross linking group.
- 140. The method of claim 110, wherein the repeating -M-O-M-O- backbone is a three dimensional matrix.
- 141. The method of claim 92, wherein the material of the hybrid layer is hydrophobic and results, if exposed to water, in a water contact angle of 90 degrees or more.
- 142. The method of claim 141, wherein the material of the hybrid layer is hydrophobic and results, if exposed to water, in a water contact angle of 110 degrees or more.
- 143. The method of claim 92, wherein the hybrid material is perfluorinated.
- 144. The method of claim 92, wherein the hybrid material is comprised of less than 10% H.
- 145. The method of claim 144, wherein the hybrid material is comprised of less than 5% H.
- 146. The method of claim 110, wherein the organic substituent is an epoxy group.
- 147. The method of claim 110, wherein the organic substituent is an alkynyl group.
- 148. The method of claim 92, wherein a diffusion barrier layer is deposited before depositing the electrically conductive material.
- 149. The method of claim 92, wherein the hybrid material of the first and second layers is the result of hydrolysis of chlorosilane precursors.
- 150. An integrated circuit made by the method of claim 92.
- 151. A method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.
- 152. A dual damascene method for making an integrated circuit, comprising:
providing a first photosensitive hybrid organic inorganic dielectric material with a metal oxide or semiconductor oxide backbone and a cross linking group bound to the backbone, and depositing the hybrid material on a substrate as a first layer; writing with a particle beam or directing light through a mask so as to cause cross linking via the cross linking groups in selected areas of the first layer of deposited photosensitive hybrid material; providing a second photosensitive hybrid organic inorganic dielectric material with a metal oxide or semiconductor oxide backbone and a cross linking group bound to the backbone, and depositing the hybrid material as a second layer on the first layer; writing with a particle beam or directing light through a mask so as to cause cross linking via the cross linking groups in selected areas of the second layer of deposited photosensitive hybrid material; removing non-cross linked areas of the first and second layers with a developer to form removed areas in the first and second layers proximate to each other; and depositing an electrically conductive material into the removed areas from both the first and second layers.
- 153. An integrated circuit comprising an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.
- 154. A method comprising:
providing a printed circuit board substrate; depositing electrically insulating material on the printed circuit board substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350 C. or less in order to achieve final density of the material; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after the heating to achieve the final density of the material.
- 155. A method for forming a semiconductor device, comprising:
on a substrate, depositing a fluorinated hybrid organic-inorganic dielectric material; and exposing to ultraviolet light first areas of the deposited hybrid material at a wavelength of 250 nm or less; and removing second areas of the hybrid material that are not exposed to ultraviolet light; and depositing electrically conductive material in the second areas.
- 156. The method of claim 15, further comprising:
after depositing the hybrid material, heating the material at a temperature up to 350 C., followed by said exposing at 250 nm or less.
- 157. The method of claim 156, wherein the fluorinated hybrid material is a dielectric material that, when deposited, comprises a hybrid organic-inorganic material having a metal oxide or metalloid oxide backbone formed from hydrolyzed or condensed precursors and organic groups bound to the metal or metalloid in the backbone, wherein the organic groups are fluorinated.
- 158. The method of claim 155, wherein the depositing of the electrically conductive material comprises depositing copper and chemical mechanical polishing the copper down to a top surface of the hybrid material.
- 159. The method of claim 155, which is part of a dual damascene process.
- 160. The method of claim 155, wherein the organic groups comprise partially or fully fluorinated alkyl groups having from 1 to 4 carbon atoms.
- 161. The method of claim 157, wherein the organic groups further comprise partially or fully fluorinated aryl groups.
- 162. The method of claim 160, wherein the hybrid material is deposited by spin coating, spray coating or dip coating.
- 163. The method of claim 162, wherein the hybrid material is deposited by spin coating.
- 164. The method of claim 162, wherein the hybrid material is deposited by spray coating.
- 165. The method of claim 155, wherein the deposited hybrid material has a glass transition temperature of 200 C. or more.
- 166. The method of claim 165, wherein the deposited hybrid material has a glass transition temperature of 250 C. or more.
- 167. The method of claim 166, wherein the deposited hybrid material has a glass transition temperature of 310 C. or more.
- 168. The method of claim 161, wherein the the removing of second areas of hybrid material comprise providing a developer onto the hybrid material.
- 169. The method of claim 155, wherein the hybrid material is formed with a repeating -M-O-M-O- back-bone having an organic substituent bound to the backbone, the material having a molecular weight of from 500 to 100,000, where M is silicon and O is oxygen.
- 170. The method of claim 169, wherein the molecular weight is from 1500 to 3000.
- 171. The method of claim 169, wherein the organic substituent is fully fluorinated.
- 172. The method of claim 171, wherein more than one different organic substituent is bound to the repeating -M-O-M-O backbone, and wherein each organic substituent is fully or partially fluorinated.
- 173. The method of claim 172, wherein after exposure the hybrid material comprises organic cross linking groups between adjacent -M-O-M-O- strands.
- 174. The method of claim 155, wherein hybrid material, when deposited on the substrate, comprises an organic group capable of undergoing polymerization when exposed to electromagnetic energy.
- 175. The method of claim 174, wherein the organic groups are fluorinated groups.
- 176. The method of claim 169, wherein the organic substitutent is a single or multi ring aryl group or an alkyl group having from 1 to 4 carbons.
- 177. The method of claim 176, wherein the aryl or alkyl group is fluorinated or deuterated.
- 178. The method of claim 177, wherein the aryl or alkyl group is fluorinated.
- 179. The method of claim 176, wherein the organic substituent is a fluorinated phenyl or fluorinated alkyl group having from 1 to 5 carbon atoms.
- 180. The method of claim 179, wherein the fluorinated phenyl group is substituted with fluorinated methyl, ethyl or alkenyl groups.
- 181. The method of claim 180, wherein the material is exposed to electromagnetic radiation via a mask so as to selectively further cross link the material and increase the molecular weight of the material in selected areas.
- 182. The method of claim 181, wherein the electromagnetic energy has a wavelength of from 13 nm to 700 nm.
- 183. The method of claim 181, wherein a developer is applied to remove material in unexposed areas.
- 184. The method of claim 179, wherein the material is deposited after mixing with a solvent.
- 185. The method of claim 184, wherein the solvent is selected from isopropanol, ethanol, methanol, THF, mesitylene, toluene, cyclohexanone, cyclopentanone, dioxane, methyl isobutyl ketone, or perfluorinated toluene.
- 186. The method of claim 174, wherein M is Si.
- 187. The method of claim 183, wherein the material is mixed with a solvent and a thermal initiator or photoinitiator prior to deposition.
- 188. The method of claim 187, wherein a photoinitiator is mixed with the material and solvent prior to spin on, the photoinitiator undergoing free radical formation when exposed to light so as to cause polymerization in the hybrid material.
- 189. The method of claim 152, wherein the ultraviolet light has a wavelength of 192 nm or less.
- 190. The method of claim 189, wherein the ultraviolet light is directed on the hybrid layer via a mask so as to expose the first portions of the hybrid layer, and wherein the developer removes the non-exposed second portions of the hybrid layer, and wherein the ultraviolet light has a wavelength of 157 nm or less.
- 191. The method of claim 169, wherein the hybrid material comprises fluorinated cross linking groups between M elements in a three dimensional -M-O-M-O- lattice.
- 192. The method of claim 191, wherein the organic cross linking groups are fully fluorinated.
- 193. The method of claim 169, comprising three or more different organic groups bound to the -M-O-M-O- backbone.
- 194. The method of claim 158, wherein the hybrid material is a siloxane.
- 195. The method of claim 169, wherein the hybrid material comprises between 2 and 6 different organic substituents on an inorganic three dimensional backbone matrix.
- 196. The method of claim 169, wherein the molecular weight is from 500 to 5000.
- 197. The method of claim 196, wherein the molecular weight is from 500 to 3000.
- 198. The method of claim 191, wherein the repeating -M-O-M-O- backbone is a three dimensional matrix.
- 199. The method of claim 155, wherein the material of the hybrid layer is hydrophobic and results, if exposed to water, in a water contact angle of 90 degrees or more.
- 200. The method of claim 155, wherein the hybrid material is formed by depositing at a temperature of 200 C. or less.
- 201. The method of claim 155, wherein the hybrid material is annealed after depositing, wherein the annealing is at a temperature of 200 C. or less.
- 202. The method of claim 155, wherein the hybrid material is deposited at a temperature of 150 C. or less.
- 203. The method of claim 155, wherein the substrate is a glass, quartz, semiconductor, ceramic or plastic substrate.
- 204. The method of claim 155, wherein chlorosilane precursors are hydrolyzed and condensed to form the hybrid material.
- 205. The method of claim 155, wherein the substrate is a semiconductor substrate.
- 206. The method of claim 174, wherein the organic group capable of undergoing polymerization is vinyl.
- 207. The method of claim 155, wherein the deposited hybrid material is capable of being heated in super-critical water vapor at 2 atm and at 120 C. for 2 hours without degradation.
- 208. The method of claim 155, wherein the hybrid material is directly patterned after being deposited so as to have a surface topography where the aspect ratio is at least 2:1.
- 209. The method of claim 208, wherein the hybrid material is directly patterned to have a surface topography where the aspect ratio is at least 3:1.
- 210. The method of claim 209, wherein the deposited hybrid material is directly patterned to have a surface topography where the aspect ratio is at least 10:1.
- 211. The method of claim 155, wherein the hybrid material has a glass transition temperature or 200 C. or greater.
- 212. The method of claim 155, wherein the hybrid material is perfluorinated.
- 213. The method of claim 155, wherein the hybrid material is composed of less than 10% H.
- 214. The method of claim 213, wherein the hybrid material is comprised of less than 5% H.
- 215. The method of claim 155, wherein the hybrid material is patterned to form apertures and/or ridges having a feature size of 100 nm or less.
- 216. The method of claim 215, wherein the hybrid material is patterned to form apertures and/or ridges having a feature size of 50 nm or less.
- 217. The method of claim 155, wherein the electrically conductive areas comprise aluminum.
- 218. The method of claim 155, wherein the electrically conductive areas comprise copper.
- 219. The method of claim 155, wherein the method is part of a copper damascene process.
- 220. The method of claim 155, wherein after the hybrid material is cross linked via the organic substituents, a developer is provided to remove areas not cross linked.
- 221. The method of claim 155, further comprising chemical mechanical polishing the hybrid material after deposition on the substrate but before providing the developer.
- 222. A dual damascene method for making an integrated circuit, comprising:
providing a first photosensitive hybrid organic inorganic dielectric material that is a negative tone material, and depositing the first hybrid material on a substrate as a first layer; writing with a particle beam or selectively exposing to electromagnetic energy so as to cause decreased solubility in selected areas of the first layer of deposited photosensitive hybrid material; removing areas in the first layer that are not decreased in solubility with a developer to form first removed areas; providing a second photosensitive hybrid organic inorganic dielectric material that is a negative tone material, and depositing the second hybrid material as a second layer on the first layer and that extends into the first removed areas; writing with a particle beam or selectively exposing to electromagnetic energy so as to decrease solubility in selected areas of the second layer of deposited photosensitive hybrid material; removing areas in the second layer that are not decreased in solubility including material that extends into the first removed areas of the first layer, with a developer to form second removed areas that comprise removed areas from both the first and second layers proximate to each other; and depositing an electrically conductive material into the removed areas of both the first and second layers.
- 223. A dual damascene method for making an integrated circuit, comprising:
providing a first photosensitive hybrid organic inorganic dielectric material with a metal oxide or semiconductor oxide backbone and a cross linking group bound to the backbone, and depositing the first hybrid material on a substrate as a first layer; writing with a particle beam or selectively exposing with electromagnetic energy so as to cause cross linking via the cross linking groups in selected areas of the first layer of deposited photosensitive hybrid material; removing non-cross linked areas in the first layer with a developer to form first removed areas; providing a second photosensitive hybrid organic inorganic dielectric material with a metal oxide or semiconductor oxide backbone and a cross linking group bound to the backbone, and depositing the second hybrid material as a second layer on the first layer and that extends into the first removed areas; writing with a particle beam or selectively exposing to electromagnetic energy so as to cause cross linking via the cross linking groups in selected areas of the second layer of deposited photosensitive hybrid material; removing non-cross linked areas of the second layer including material that extends into the first removed areas of the first layer with a developer to form second removed areas that comprise removed areas from both the first and second layers proximate to each other; and depositing an electrically conductive material into the removed areas of both the first and second layers.
- 224. A dual damascene method for making an integrated circuit, comprising:
providing a first photosensitive hybrid organic inorganic dielectric material that is a negative tone material, and depositing the hybrid material on a substrate as a first layer; writing with a particle beam or selectively exposing to electromagnetic energy so as to cause decreased solubility in selected areas of the first layer of deposited photosensitive hybrid material; providing a second photosensitive hybrid organic inorganic dielectric material that is a negative tone material, and depositing the hybrid material as a second layer on the first layer; writing with a particle beam or selectively exposing to electromagnetic energy so as to decrease solubility in selected areas of the second layer of deposited photosensitive hybrid material; removing areas of the first and second layers that are not decreased in solubility, with a developer to form removed areas in the first and second layers proximate to each other; and depositing an electrically conductive material into the removed areas from both the first and second layers.
- 225. A dual damascene method for making an integrated circuit, comprising:
providing a first photosensitive hybrid organic inorganic dielectric material that is a negative tone material, and depositing the hybrid material on a substrate as a first layer; polymerizing selected areas of the first layer of deposited photosensitive hybrid material; providing a second photosensitive hybrid organic inorganic dielectric material that is a negative tone material, and depositing the hybrid material as a second layer on the first layer; polymerizing selected areas of the second layer of deposited photosensitive hybrid material; removing non-selected areas of the first and second layers with a developer to form removed areas in the first and second layers proximate to each other; and depositing an electrically conductive material into the removed areas from both the first and second layers.
Parent Case Info
[0001] This application claims priority under 35 USC 119 to U.S. provisional patent applications 60/349,955 to Reid et al. filed Jan. 17, 2002, No. 60/395,418 to Rantala et al. filed Jul. 13, 2002, and No. 60/414,578 to Rantala et al. filed Sep. 27, 2002, the subject matter of each being incorporated herein by reference in their entirety.
Provisional Applications (2)
|
Number |
Date |
Country |
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60349955 |
Jan 2002 |
US |
|
60395418 |
Jul 2002 |
US |