Claims
- 1. A method for forming a non-single-crystal semiconductor thin film by use of a semiconductor thin film forming apparatus comprising a film deposition chamber having a film-forming space surrounded by a film deposition chamber wall and a substrate, an external chamber surrounding the deposition chamber wall and a gas supply means, which method comprises, introducing a film-forming gas through the gas supply means into the film-forming space and introducing a plasma in the film-forming space, thereby forming a non-single-crystal semiconductor thin film on a surface of the substrate, wherein the gas supply means comprises a gas manifold spaced apart from the deposition chamber wall outside the film deposition chamber.
- 2. A method for forming a non-single-crystal semiconductor thin film according to claim 1, wherein the thin film is formed while temperature control is carried out by a cooling mechanism and a temperature-increasing mechanism provided such that the mechanisms cover a part of an outside surface of the deposition chamber wall.
- 3. A method for forming a non-single-crystal semiconductor thin film according to claim 1, wherein the apparatus further comprises a means for introducing a microwave or a VHF wave into the film-forming space.
- 4. A method for producing a photovoltaic device, comprising a step of forming a non-single-crystal semiconductor thin film as set forth in claim 1.
- 5. A method for producing a photovoltaic device according to claim 4, wherein the non-single-crystal semiconductor thin film is an i-type semiconductor layer.
- 6. The method for forming a non-single-crystal semiconductor thin film according to claim 1, wherein an outside surface of the deposition chamber wall comprises the surface of the substrate, an applicator surface having an applicator means, an exhaust surface having a gas exhaust means, and a normal surface other than the surfaces and wherein a cooling mechanism and a temperature-increasing mechanism are provided on the applicator surface or on the normal surface.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-353512 |
Dec 1996 |
JP |
|
Parent Case Info
This application is a division of U.S. patent application Ser. No. 08/990,915 filed Dec. 15, 1997, now U.S. Pat. No. 6,159,300 issued Dec. 12, 2000.
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Country |
0106521 |
Apr 1984 |
EP |
0406691 |
Jan 1991 |
EP |
0574178 |
Dec 1993 |
EP |
Non-Patent Literature Citations (1)
Entry |
Patent Abstracts of Japan, vol. 13, No. 230 (E-764), May 26, 1989 re: Publication No. 01036085. |