Claims
- 1. A method for producing a layered semiconductor configuration to be soldered to a metal substrate plate, which comprises:a) depositing an aluminum layer onto a silicon semiconductor body; b) depositing a first titanium layer onto the aluminum layer; c) depositing a titanium nitride layer onto the first titanium layer; and d) depositing a second titanium layer onto the titanium nitride layer.
- 2. The method according to claim 1, which comprises:e) depositing a nickel layer onto the second titanium layer; and f) depositing an oxidation protection layer onto the nickel layer.
- 3. The method according to claim 2, which comprises:depositing an adhesion promoter layer onto the nickel layer between steps e) and f).
- 4. The method according to claim 1, which comprises:depositing a solder material layer onto the second titanium layer.
- 5. The method according to claim 1, which comprises during step a):a1) applying a thin aluminum layer to the silicon semiconductor body; a2) tempering the silicon semiconductor body with the thin aluminum layer; and a3) depositing, subsequently a further aluminum layer to the thin aluminum layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
197 34 434 |
Aug 1997 |
DE |
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CROSS-REFERENCE TO RELATED APPLICATION
This is a division of U.S. application Ser. No. 09/285,902, filed Apr. 8, 1999, now U.S. Pat. No. 6,147,403 which was a continuation of copending International Application PCT/DE98/02199, filed Jul. 31, 1998, now WO 99/08322, which designated the United States.
US Referenced Citations (8)
Foreign Referenced Citations (4)
Number |
Date |
Country |
38 23 347 A1 |
Jan 1990 |
DE |
92 12 486.0 |
Apr 1993 |
DE |
196 03 654 C1 |
Jul 1997 |
DE |
0 720 231 A2 |
Jul 1996 |
EP |
Non-Patent Literature Citations (1)
Entry |
“High Reliability Microwave Silicon Power Transistor With Stepped Electrode Structure and TiN Diffusion Barrier” (Kanamori et al.), IEEE Transactions on Electron Devices, vol. ED-33, No. 3, Mar. 1986, pp. 402-408. |
Continuations (1)
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Number |
Date |
Country |
Parent |
PCT/DE98/02199 |
Jul 1998 |
US |
Child |
09/285902 |
|
US |