MULTI-COMPONENT PACKAGE WITH BOTH TOP AND BOTTOM SIDE CONNECTION PADS FOR THREE-DIMENSIONAL PACKAGING

Abstract

An apparatus and a method for packaging semiconductor devices. The apparatus is a three-dimensional electronic package comprising one or more electronic components, a plurality of electrical contact pads, and a plurality of electrically conductive three-dimensional plugs formed through an encapsulant. Specific ones of the plurality of electrical contact pads are electrically coupled to the one or more electronic components on an uppermost surface of the plurality of electrical contact pads. The encapsulant is formed over and covers the one or more electronic devices. The plurality of three-dimensional plugs have a first end extending from at least the uppermost portion of one or more of the plurality of electrical contact pads and a second end extending substantially to an uppermost surface of the encapsulant.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1C show a bumped chip carrier (BCC) of the prior art.

FIGS. 2A-2D show cross-sectional views of exemplary fabrication steps of the present invention at a post-encapsulation phase.

FIGS. 3A-3B show an exemplary application of the present invention.

DETAILED DESCRIPTION

Various common package types which utilize a sacrificial metal base strip connection do not have electrical connection pads on an uppermost surface of the completed package. Package types in this category include thin array plastic package (TAPP), ultra-thin land grid array (ULGA), and bumped chip carrier (BCC) packages. However, an application of the present invention to each of these and other packages allows packages to be arranged in three-dimensional stacks. Three-dimensional stacks allow a much smaller footprint of electronic devices when compared with a similar density of non-stacked devices. Further, individual packages may be individually tested prior to stacked packages being electrically connected thus improving final package test yield when compared with prior art non-stacked techniques. Additionally, rework of a stacked package module is possible simply by replacing components within the stack. Under the prior art, if one component in a package fails the entire package must be replaced. Utilizing the present invention, only one package within the stack is replaced.

TAPP, ULGA, BCC, and similar families of packages are manufactured in multi-strip formats throughout an assembly process and then singulated into individual packages as a final step. Illustrations used herein focus on a single unit merely for clarity. However, a skilled artisan will recognize application of the present invention to a multi-strip application as well.

With reference to FIG. 2A, a sacrificial metal-type package is shown after components are mounted and encapsulated. Specifically, the exemplary package of FIG. 2 includes a sacrificial base strip 201, a plurality of attach/bond pads 203, a plurality of discrete devices 205, an integrated circuit device 207, a plurality of bond wires 209, and an encapsulant (i.e., mold compound) 211. Any number and combination of integrated circuit dice and/or discrete components may be mixed in the package. In addition to using bond wires 209, the dice may be, for example, flip-chip bonded and either mounted as a single die or in a stacked-die configuration. The sacrificial base strip 201 may be comprised of copper, copper alloys, or other types of materials such as nickel or iron and its alloys. In an alternative embodiment, the sacrificial base strip 201 may be formed from a non-conducting material.

The plurality of attach/bond pads 203 may be plated-up metal layers. One desirable key property of the attach/bond pads 203 is to support a solder attach assembly for the package external connection pads and to support wire-bonding and/or flip-chip solder bonding and discrete component solder attach. There are situations where other electrical attachment techniques may not require solder attachment and thus the ability to solder to the attach/bond pads 203 is not an issue. For example, certain types of electrically-conductive epoxies will not required solder attachments. In any case, an ability to carry electrical current may be another parameter in determining a composition of the plated-up metal layers. Such determinations are known to one of skill in the art. However, typical metal layer compositions of the plated-up layer include, for example, gold-nickel-copper-nickel-gold (Au—Ni—Cu—Ni—Au) and gold-palladium-nickel-palladium (Au—Pd—Ni—Pd).

In FIG. 2B, holes (e.g., tunnels or vias) 213 are formed in the encapsulant 211 at one or more points where electrical connections need to be brought from a lowermost portion of the package to an uppermost portion of the package. The holes 213 may be produced by, for example, laser drilling or mechanical drilling through the encapsulant 211. Other techniques may also be used to form the holes 213. Alternative forms of producing the holes 213 include incorporating pins into the encapsulant 211 prior to curing the mold compound or an anisotropic chemical etch (depending upon chemical characteristics of a material chosen for the encapsulant 211). The holes 213 thus expose the electrically conductive surfaces of one or more of the attach/bond pads 203. The holes 213 may either be formed to an uppermost surface of the attach/bond pads 203 or, alternatively, may be drilled past the attach/bond pads and into the sacrificial base strip 201.

In FIG. 2C, the holes 213 (FIG. 2B) are at least partially-filled (e.g., filled sufficiently to provide a complete electrical path from the lowermost surface, i.e., the contact pads, to the uppermost surface that is substantially coplanar with the top surface of the encapsulant) with an electrically conductive material. A partial filling is electrically conductive from the lowermost surface to the uppermost surface and may be physically discontinuous in all areas (e.g., a cylindrical shape). The electrically conductive material thus forms a three-dimensional plug 215. The three-dimensional plug 215 may be formed by, for example, an electrolytic copper plating. Metals or alloys other than copper may be used as well. Such metals include copper alloys, nickel, tin, tin alloys, tungsten, titanium-tungsten, and so on. Further, forming methods other than electrolytic plating may be used including physical or chemical vapor deposition (PVD or CVD).

In FIG. 2D, the sacrificial base strip 201 is removed, for example, by chemical etching. Using a high-selectivity etchant, the etchant will not etch any of the plated-up metal layers that form the plurality of attach/bond pads 203 or the electrically conductive plug 215. In an alternative embodiment, if the sacrificial base strip 201 is formed from a non-conductive material, the sacrificial base strip 201 may be left in place. The multi-strip format (no shown) is singulated (typically by mechanical sawing or laser-scribing), forming individual packages having electrical connection pads on both an uppermost and a lowermost surface. The packages may be stacked and electrically connected, one atop another.

With reference to FIG. 3A, an exemplary application of the present invention is shown in use with other electronic devices. Three major components are a multi-component package 300 in accordance with the present invention, a four-layer thin core substrate 330, and a system-in-package (SIP) module 350.

In this exemplary application, the multi-component module 300 includes a plurality of attach/bond pads 303, a plurality of discrete electronic devices 305, an integrated circuit 307, a plurality of bond wires 309, and encapsulant 311, and a plurality of three-dimensional plugs 315. The four-layer thin core substrate 330 is known in the art and includes a core 331, a plurality of feed-through connectors 333, and a plurality of contact pads 335. The core is typically an epoxy laminate (e.g., FR-4) or ceramic. The SIP module 350 includes an externally-mounted crystal 351, a plurality of attach/bond pads 353, one or more internally-mounted discrete electronic devices 355, an integrated circuit device 357, a plurality of bond wires 359, and an encapsulant 361. The encapsulated package within the SIP module 350 may be virtually an type of electronic package including a BGA, quad flat-pack no-lead (QFN), quad flat package (QFP), and so on.

FIG. 3B shows a final three-dimensional package 390 made possible through the use of the multi-component module 300 of the present invention. A skilled artisan will recognize that a plurality of multi-component modules 300 (FIG. 3A), in this and other configurations, may be stacked in numerous ways. All dimensions shown in FIGS. 3A and 3B are merely exemplary and are based on thicknesses of may standard components.

In the foregoing specification, the present invention has been described with reference to specific embodiments thereof. It will, however, be evident to a skilled artisan that various modifications and changes can be made thereto without departing from the broader spirit and scope of the invention as set forth in the appended claims. For example, skilled artisans will appreciate that embodiments of the present invention may be readily applied to modified versions of TAPP (thin array plastic package), ULGA (ultra-thin land grid array), BCC (bumped chip carrier), or other package types. The specification and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense.

Claims

1. A three-dimensional electronic package comprising: one or more electronic components;a plurality of electrical contact pads, specific ones of the plurality of electrical contact pads electrically coupled to the one or more electronic components on an uppermost surface of the plurality of electrical contact pads;an encapsulant formed over and covering the one or more electronic devices; anda plurality of electrically conductive three-dimensional plugs electrically coupled to one or more of the plurality of electrical contact pads, the plurality of three-dimensional plugs having a first end extending from at least the uppermost portion of the one or more of the plurality of electrical contact pads and a second end extending substantially to an uppermost surface of the encapsulant.

2. The three-dimensional electronic package of claim 1 wherein the plurality of electrically conductive three-dimensional plugs are comprised of copper.

3. The three-dimensional electronic package of claim 1 wherein the plurality of electrically conductive three-dimensional plugs are comprised of a copper alloy.

4. The three-dimensional electronic package of claim 1 wherein the plurality of electrically conductive three-dimensional plugs are solid from the first end to the second end.

5. The three-dimensional electronic package of claim 1 wherein the plurality of electrically conductive three-dimensional plugs are electrically conductive and physically discontinuous.

6. The three-dimensional electronic package of claim 1 wherein the plurality of electrical contact pads are formed from a plated-up metal layer.

7. The three-dimensional electronic package of claim 6 wherein the plated-up metal layer is comprised of a gold-nickel composite.

8. A method of packaging a semiconductor device, the method comprising: forming a plurality of electrical contact pads over a sacrificial base strip;mounting an electrical component to select ones of the plurality of electrical contact pads;forming an encapsulant over the electrical component;forming a plurality of holes from an uppermost portion of the encapsulant to at least an uppermost portion of one or more of the plurality of electrical contact pads; andat least partially filling the plurality of holes with an electrically conductive material such that the at least partially-filled plurality of holes is electronically conductive from a first end in electrical contact with the one or more of the plurality of electrical contact pads to a second end which is substantially coplanar with an uppermost surface of the encapsulant.

9. The method of claim 8 further comprising attaching a plurality of bond wires from the electrical component to select ones of the plurality of electrical contact pads.

10. The method of claim 9 wherein the electrically conductive material is selected to be copper.

11. The method of claim 8 further comprising removing the sacrificial base strip after the encapsulant is formed over the electronic component.

12. The method of claim 11 wherein the sacrificial base strip is removed by chemical etching.

13. The method of claim 12 wherein the etchant is chosen to be highly selective so as to chemically etch the sacrificial base strip and etch neither the plurality of electrical contact pads nor the at least partially-filled plurality of holes.

14. The method of claim 8 wherein the plurality of electrical contact pads are selected to be formed from a plated-up metal layer.

15. The method of claim 14 wherein the plated-up metal layer is selected to be comprised of a gold-nickel composite.

16. A method of producing a three-dimensional package for mounting a plurality of electronic devices, the method comprising: forming a plurality of electrical contact pads over a sacrificial base strip;mounting the plurality of electronic devices to select ones of the plurality of electrical contact pads;attaching a plurality of bond wires from select ones of the plurality of electronic devices to select ones of the plurality of electrical contact pads;forming an encapsulant over the plurality of electronic devices;forming a plurality of holes from an uppermost portion of the encapsulant to at least an uppermost portion of one or more of the plurality of electrical contact pads;at least partially filling the plurality of holes with an electrically conductive material such that the at least partially-filled plurality of holes is electrically conductive from a first end in electrical contact with the one or more of the plurality of electrical contact pads to a second end which is substantially coplanar with an uppermost surface of the encapsulant; andremoving the sacrificial base strip after the encapsulant is formed over the plurality of electronic devices.

17. The method of claim 16 wherein the electrically conductive material is selected to be copper.

18. The method of claim 16 wherein the plurality of electrical contact pads and the electrically conductive material are formed from dissimilar electrically conducting materials.

19. The method of claim 16 wherein the etchant is chosen to be highly selective so as to chemically etch the sacrificial base strip and etch neither the plurality of electrical contact pads nor the at least partially-filled plurality of holes.

20. The method of claim 16 wherein the plurality of electrical contact pads are selected to be formed from a plated-up metal layer.

21. The method of claim 20 wherein the plated-up metal layer is selected to be comprised of a gold-nickel composite.