Semiconductor device, and inspection method thereof

Abstract

In a substrate for a stacking-type semiconductor device including a connection terminal provided for a connection with a semiconductor chip to be stacked and an external terminal connected to the connection terminal through a conductor provided in a substrate, connection terminals of a power supply, a ground and the like, which terminals have an identical node, are electrically continuous with each other. Thus, it is possible to facilitate an inspection of electrical continuity between each connection terminal and an external terminal corresponding to each connection terminal by minimum addition of inspecting terminals. Further, it is possible to improve reliability of a stacking-type semiconductor module.

Description

BRIEF DESCRIPTION OF THE INVENTION

FIG. 1 is a sectional view illustrating a configuration of a stacking-type semiconductor device in a first embodiment of the present invention;

FIG. 2 briefly illustrates a configuration of a substrate in the first embodiment of the present invention when being seen from above;

FIG. 3 briefly illustrates a configuration of a substrate in a second embodiment of the present invention when being seen from above;

FIG. 4 schematically illustrates a configuration of a connection in the second embodiment of the present invention;

FIG. 5 briefly illustrates a configuration of a substrate in a third embodiment of the present invention when being seen from above;

FIG. 6 is a sectional view illustrating the configuration of the substrate in the third embodiment of the present invention;

FIG. 7 schematically illustrates a configuration of a connection in the third embodiment of the present invention;

FIG. 8 briefly illustrates a configuration of a substrate in a fourth embodiment of the present invention when being seen from above;

FIG. 9 schematically illustrates a configuration of a connection in the fourth embodiment of the present invention;

FIG. 10 briefly illustrates a configuration of a substrate in a fifth embodiment of the present invention when being seen from above; and

FIG. 11 schematically illustrates a configuration of a connection in the fifth embodiment of the present invention.

Claims

1. A semiconductor device comprising a substrate having a semiconductor chip mounted thereon, and at least one stacking-type semiconductor chip stacked on the substrate, the semiconductor device further comprising:a plurality of connection terminals each provided for connection with a terminal of the stacking-type semiconductor chip, the terminals being formed on a stacking-type semiconductor chip mounting face of the substrate;a plurality of external electrodes each formed on a face opposite to the stacking-type semiconductor chip mounting face of the substrate;a conductor directly connecting, in the substrate, between one of the connection terminal and an internal wire of the substrate and the external electrode; andan inspecting external electrode connected to the connection terminal connected to the external electrode, the electrode being formed on the face opposite to the stacking-type semiconductor chip mounting face of the substrate, whereinan inspection of continuity is performed between the external electrode connected to the connection terminal and the inspecting external electrode thereby to perform an inspection of continuity between each connection terminal and each external electrode.

2. A semiconductor device comprising a substrate having a semiconductor chip mounted thereon, and at least one stacking-type semiconductor chip stacked on the substrate, the semiconductor device further comprising:a plurality of connection terminals each provided for connection with a terminal of the stacking-type semiconductor chip, the terminals being formed on a stacking-type semiconductor chip mounting face of the substrate;a plurality of external electrodes each formed on a face opposite to the stacking-type semiconductor chip mounting face of the substrate;a conductor directly connecting, in the substrate, between one of the connection terminal and an internal wire of the substrate and the external electrode; anda conductive structure establishing a serial connection between at least two external electrodes from among the plurality of external electrodes and having an identical node, whereinan inspection of continuity is performed between external electrodes to be connected to predetermined two connection terminals selected from the plurality of connection terminals connected in series, thereby to perform an inspection of continuity between each connection terminal and each external electrode is performed.

3. The semiconductor device according to claim 2, wherein the conductive structure is comprised of a wire on an uppermost layer of the substrate on which the connection terminal is formed, an external electrode connected to an optional connection terminal selected from the plurality of connection terminals connected in series is set as a reference electrode, and an inspection of continuity between the reference electrode and each of the external electrodes is performed, thereby to perform an inspection of continuity between each connection terminal and each external electrode.

4. The semiconductor device according to claim 3, wherein the conductive structure is comprised of an annular wire formed on the uppermost layer of the substrate and suppressing voltage fluctuations, and an external electrode having a node identical to that of the annular wire is connected to the annular wire.

5. The semiconductor device according to claim 2, wherein the conductive structure is comprised of a combination of wires formed on optional layers of the substrate, and an inspection of continuity is performed between external electrodes connected to predetermined two connection terminals selected from the connection terminals connected in series, thereby to perform an inspection of continuity between each connection terminal and each external electrode.

6. A semiconductor device comprising a substrate having a semiconductor chip mounted thereon, and at least one stacking-type semiconductor chip stacked on the substrate, the semiconductor device further comprising:a plurality of connection terminals each provided for connection with a terminal of the stacking-type semiconductor chip, the terminals being formed on a stacking-type semiconductor chip mounting face of the substrate;a plurality of external electrodes each formed on a face opposite to the stacking-type semiconductor chip mounting face of the substrate;a conductor directly connecting, in the substrate, between one of the connection terminal and an internal wire of the substrate and the external electrode; anda conductive structure establishing a serial connection between two external electrodes having an identical node and making a pair, whereinan inspection of continuity is performed between the two external electrodes to be connected to connection terminals in the respective pairs connected in series, thereby to perform an inspection of continuity between each connection terminal and each external electrode.

7. The semiconductor device according to claim 6, further comprising an annular wire formed of a wire on an uppermost layer of the substrate and connected to any one of the connection terminals in the respective pairs, thereby to suppress voltage fluctuations.

8. The semiconductor device according to claim 1, wherein a space between the conductor and the conductive structure has a designed dimensional value larger than a minimum designed dimensional value.

9. An inspection method of a semiconductor device, for performing an inspection of continuity for the semiconductor device according to claim 6, the method comprising: using inspection sockets for electrically connecting the separated external electrodes of the respective pairs such that all connection terminals having an identical node are connected in series, andperforming an inspection of continuity between terminals of the inspection sockets corresponding to the external electrodes located at both ends of the serial connection, thereby to perform an inspection of continuity between each connection terminal and each external electrode.

10. The inspection method of a semiconductor device according to claim 9, wherein the inspection sockets are used for electrically connecting the separated external electrodes of the respective pairs such that all connection terminals are connected in series, andan inspection of continuity is performed between the terminals of the inspection sockets connected to the external electrodes located at both ends of the serial connection, thereby to perform inspections of continuity between all the connection terminals and the external electrodes.