Number | Date | Country | Kind |
---|---|---|---|
2002-061305 | Mar 2002 | JP |
Number | Name | Date | Kind |
---|---|---|---|
H1287 | Zeisse et al. | Feb 1994 | H |
5334870 | Katada et al. | Aug 1994 | A |
5753556 | Katada et al. | May 1998 | A |
6093944 | VanDover | Jul 2000 | A |
6251720 | Thakur et al. | Jun 2001 | B1 |
6316304 | Pradeep et al. | Nov 2001 | B1 |
Entry |
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“MOSFET Devices with Polysilicon on Single-Layer HfO2 High-K Dielectrics” L. Kang et al., IEDM 00-35, pp. 35-38. |
“MOS Characteristics of Ultra Thin Rapid Thermal CVD ZrO2 and Zr Silicate Gate Dielectrics” C.H. Lee et al., IEDM, pp. 27-30. |