Claims
- 1. A semiconductor device having a barrier insulating film covering a first wiring layer of a copper film or consisting mainly of the copper film on a substrate,the composite barrier insulating film comprising: at least two layers including a first barrier insulating film formed on and covering said first wiring layer, said first barrier insulating film consisting of silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film formed on and covering said first barrier insulating film, said second barrier insulating film consisting of silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon; and a SiO2 insulating film having a low dielectric constant formed on the composite barrier insulating film; and wherein the composite barrier insulating film and the insulating film having the low dielectric constant constitute an interlayer insulating film, and a second wiring layer of a copper film or consisting mainly of a copper film is formed on the insulating film having the low dielectric constant.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2001-247936 |
Aug 2001 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
The present application claims priority of Japanese Application No. 2001-247936 filed Aug. 17, 2001.
US Referenced Citations (8)
Foreign Referenced Citations (4)
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0 720 233 |
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EP |
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EP |
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EP |
1 158 577 |
May 2001 |
EP |
Non-Patent Literature Citations (3)
Entry |
Development of Low-k Copper Barrier Films Deposited by PE-CVD using HMDSO, N2O and NH3 Shioya et al, 2001. |
Device Electronics for Integrated Circuits, pp. 102-103. |
Properties and Integration of Low k (k<3.0) PECVD films. |