Number | Date | Country | Kind |
---|---|---|---|
10-259907 | Sep 1998 | JP | |
11-133844 | May 1999 | JP |
Number | Name | Date | Kind |
---|---|---|---|
5032893 | Fitzgerald, Jr. et al. | Jul 1991 | A |
5208182 | Narayan et al. | May 1993 | A |
5285086 | Fitzgerald, Jr. | Feb 1994 | A |
5294808 | Lo | Mar 1994 | A |
5834325 | Motika et al. | Nov 1998 | A |
6015979 | Sugiura et al. | Jan 2000 | A |
6051849 | Davis et al. | Apr 2000 | A |
6111277 | Ikeda | Aug 2000 | A |
6121634 | Saito et al. | Sep 2000 | A |
6153010 | Kiyoku et al. | Nov 2000 | A |
6177688 | Linthicum et al. | Jan 2001 | B1 |
6337223 | Kim et al. | Jan 2002 | B1 |
Number | Date | Country |
---|---|---|
0 505 093 | Sep 1992 | EP |
0 609 799 | Aug 1994 | EP |
57-115849 | Jul 1982 | JP |
03-133182 | Jun 1991 | JP |
4-34920 | Feb 1992 | JP |
404297023 | Oct 1992 | JP |
4-318918 | Nov 1992 | JP |
05-036602 | Feb 1993 | JP |
6-216037 | May 1994 | JP |
6-216037 | Aug 1994 | JP |
06268257 | Sep 1994 | JP |
409018092 | Jan 1997 | JP |
09-172200 | Jun 1997 | JP |
10312971 | Nov 1998 | JP |
11-312825 | Nov 1999 | JP |
11-340508 | Dec 1999 | JP |
P2000-21789 | Jan 2000 | JP |
Entry |
---|
Kapolenek et al “ansiotropic epitaxail growth in GaN selective area epitaxy”, Appl. Phys. Letts, vol. 71,9/1/9197, pp 1204-1206.* |
Nam et al lateral epitaxy of low defect density GaN layers via organomatallic vapor phase epitaxy, Appl. Phys. Letts vol. 71, 1997 pp 2638-2640.* |
“Thick GaN Expitaxial Growth with Low Dislocation Density by Hudride Vapor Phase Epitaxy”, by Akira Usui, et al., Jpn. J. Appl. Phys. vol. 36, (1997), Part 2, No. 7B, Jul. 15, 1997, pp. 899-902. |