Semiconductor device

Abstract

A semiconductor device includes a semiconductor element having an upper surface where an imaging area is formed; a transparent member separated from the semiconductor element by a designated distance and facing the semiconductor element; and a sealing member configured to seal an edge part of the semiconductor element and an edge surface of the transparent member; wherein a groove forming part is formed in the transparent member, the groove forming part being situated at an edge surface side of the transparent member outside of an external edge of the imaging area of the semiconductor element.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a related art solid-state image sensing device;

FIG. 2 is a plan view of the related art solid-state image sensing device;

FIG. 3 is a cross-sectional view for explaining problems of the solid-state image sensing device 10 shown in FIG. 1;

FIG. 4 is a cross-sectional view of a solid-state image sensing device of a first embodiment of the present invention;

FIG. 5 is a plan view of the solid-state image sensing device shown in FIG. 4;

FIG. 6 is a cross-sectional view showing a state where progress of a crack of a transparent member is prevented by a groove forming part in the solid-state image sensing device shown in FIG. 4;

FIG. 7 is a cross-sectional view of a solid-state image sensing device of a second embodiment of the present invention;

FIG. 8 is a cross-sectional view showing a state where progress of a crack of a transparent member is prevented by a groove forming part in the solid-state image sensing device shown in FIG. 7;

FIG. 9 is a cross-sectional view of a solid-state image sensing device of a third embodiment of the present invention;

FIG. 10 is a cross-sectional view showing a state where progress of a crack of a transparent member is prevented by a groove forming part in the solid-state image sensing device shown in FIG. 9;

FIG. 11 is a first view for explaining a first example of a manufacturing method of the solid-state image sensing device of the embodiment of the present invention;

FIG. 12 is a second view for explaining the first example of the manufacturing method of the solid-state image sensing device of the embodiment of the present invention;

FIG. 13 is a third view for explaining the first example of the manufacturing method of the solid-state image sensing device of the embodiment of the present invention;

FIG. 14 is a fourth view for explaining the first example of the manufacturing method of the solid-state image sensing device of the embodiment of the present invention;

FIG. 15 is a view for explaining a second example of the manufacturing method of the solid-state image sensing device of the embodiment of the present invention; and

FIG. 16 is a plan view of a solid-state image sensing device manufactured by the second example of the manufacturing method of the solid-state image sensing device of the embodiment of the present invention.

Claims

1. A semiconductor device, comprising: a semiconductor element having an upper surface where an imaging area is formed;a transparent member separated from the semiconductor element by a designated distance and facing the semiconductor element; anda sealing member configured to seal an edge part of the semiconductor element and an edge surface of the transparent member;wherein a groove forming part is formed in the transparent member, the groove forming part being situated at an edge surface side of the transparent member outside of an external edge of the imaging area of the semiconductor element.

2. The semiconductor device as claimed in claim 1, wherein a cross section of the groove forming part has a configuration wherein a bottom surface is a plane surface and side surfaces are formed from the bottom surface in a direction substantially perpendicular to the bottom surface.

3. The semiconductor device as claimed in claim 2, wherein a side surface of the groove forming part, which side surface is positioned toward a center of the transparent member, is at the same position as or outside of the external edge of the imaging area of the semiconductor element.

4. The semiconductor device as claimed in claim 2, wherein a width of the groove forming part is equal to or greater than approximately 0.05 mm and equal to or smaller than approximately 0.2 mm.

5. The semiconductor device as claimed in claim 1, wherein a cross section of the groove forming part has a substantially V-shaped configuration.

6. The semiconductor device as claimed in claim 5, wherein a part of a side surface of the groove forming part whose cross section has the substantially V-shaped configuration, the part being where the side surface of the groove forming part is positioned toward a center of the transparent member, and a main surface of the transparent member come in contact with each other, andthe part is at the same position as or an outside of the external edge of the imaging area of the semiconductor element.

7. The semiconductor device as claimed in claim 1, wherein a U-shaped cross section of the groove forming part has a configuration wherein a bottom surface is a curved surface and side surfaces are formed from the bottom surface in a direction substantially perpendicular to the bottom surface.

8. The semiconductor device as claimed in claim 7, wherein a part of a side surface of the groove forming part whose cross section has the substantially U-shaped configuration, the part being where the side surface of the groove forming part is positioned toward a center of the transparent member, and a main surface of the transparent member come in contact with each other, andthe part is at the same position as or outside of the external edge of the imaging area of the semiconductor element.

9. The semiconductor device as claimed in claim 1, wherein a depth of the groove forming part is approximately 50 through 90% of thickness of the transparent member.

10. The semiconductor device as claimed in claim 1, wherein a single one of the groove forming part is formed in the vicinity of each of the four sides of a main surface of the transparent member and along the corresponding side.

11. The semiconductor device as claimed in claim 1, wherein a plurality of the groove forming parts is formed in the vicinity of each of the four sides of a main surface of the transparent member and along the corresponding side.

12. The semiconductor device as claimed in claim 1, wherein the groove forming part is formed by cutting with a cutting blade; anda cross section of the groove forming part has a configuration corresponds to a cross-sectional configuration of the cutting blade.

13. The semiconductor device as claimed in claim 1, wherein the groove forming part is formed by etching the transparent member.