Patent Application
20200232090
The present invention relates to a substrate processing device and a processing system.
In manufacturing a magnetization random access memory (MRAM), a magnetization process and an annealing process are performed on a magnetic tunnel junction (MTJ) element formed by a single wafer physical vapor deposition (PVD) film forming apparatus. Patent Document 1 discloses a technique related to a vacuum heating and cooling apparatus for rapidly heating and cooling only a substrate while maintaining a high vacuum state after a film forming process. In addition, Patent Document 2 discloses a technique related to a magnetic annealing apparatus for suppressing adhesion of impurities onto a semiconductor wafer.
Patent Document 1: International Application Publication No. 2010/150590
Patent Document 2: Japanese Patent Application Publication No. 2014-181880
In the MRAM manufacturing process, plural MTJ elements are sequentially taken out from the single wafer PVD film forming apparatus after the film forming process and collectively transferred to an apparatus different from the PVD film forming apparatus to be subjected to the magnetization process and the annealing process. After the magnetization process and the annealing process are collectively performed on the MTJ elements, characteristics (a magnetoresistance ratio and the like) of the MTJ elements are individually evaluated using a current-in-plane tunneling (CIPT) measuring device or the like. In this case, if the characteristic evaluation result shows a possibility of defects in the manufacturing process, the entire MTJ elements are considered to be manufactured by the manufacturing process in which the defects have occurred since the characteristic evaluation is performed after the plural MTJ elements are collectively subjected to the magnetization process and the annealing process. Accordingly, there is a demand for a substrate processing device and a processing system capable of performing on substrates one by one a magnetization process and an annealing process after the film forming process in the MRAM manufacturing process.
In accordance with a first aspect, there is provided a substrate processing device for processing substrates one by one, each having a magnetic layer, the substrate processing device including: a support unit configured to supporting a substrate; a heating unit configured to heat the substrate supported by the support unit; a cooling unit configured to cool the substrate supported by the support unit; a processing chamber configured to accommodate the support unit, the heating unit, and the cooling unit; and a magnet unit configured to generate a magnetic field. The magnet unit has a first end surface and a second end surface extending in parallel to each other. The first end surface and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit, and the second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first end surface and the second end surface.
With such configuration, the magnet unit, the support unit for mounting the substrate, the heating unit and the cooling unit, which are required to perform the magnetization process and the annealing process on the substrate having the magnetic layer, are all included in the single substrate processing device that processes the substrates one by one. Therefore, the magnetization process and the annealing process can be performed on the substrates one by one. Accordingly, in the first aspect, the magnetization process and the annealing process can be performed on the substrates one by one after the film forming process in the MRAM manufacturing process.
Further, in the first aspect, in a state where the substrate is supported by the support unit, the substrate may be disposed to be covered by the first end surface when viewed from the first end surface and by the second end surface when viewed from the second end surface while the substrate extends in parallel with the first end surface and the second end surface. Therefore, magnetic force lines generated between the first end surface and the second end surface may be perpendicular to the extending direction of the substrate supported by the support unit (perpendicular to the surface of the substrate).
Further, in the first aspect, in a state where the substrate is supported by the support unit in the processing chamber, the cooling unit may be disposed between a position of the substrate in the processing chamber and the first end surface, and the heating unit may be disposed between the position of the substrate and the cooling unit. In this configuration, the substrate supported by the support unit is disposed between the heating unit and the cooling unit. Therefore, the substrate can be effectively heated and cooled.
Further, in the first aspect, the substrate processing device described above may further include a moving mechanism configured to move the substrate. In the state where the substrate is supported by the support unit, the moving mechanism may move the substrate toward or away from the cooling unit while maintaining the substrate in parallel with the first end surface and the second end surface. Therefore, in the case of cooling the substrate, the substrate can be moved closer to the cooling unit, so that the substrate can be more effectively cooled.
Further, in the first aspect, in a state where the substrate is supported by the support unit in the processing chamber, the cooling unit may be disposed between a position (arrangement position) of the substrate in the processing chamber and the first end surface, and the heating unit may be disposed between the position of the substrate and the cooling unit. With such configuration, the heating and the cooling are performed on the same surface of the substrate. Therefore, in the case of sequentially heating and cooling the substrate, the heated substrate can be more effectively cooled.
Further, in the first aspect, the heating unit may include a first heating layer and a second heating layer, and the cooling unit may include a first cooling layer and a second cooling layer. In a state where the substrate is supported by the support unit in the processing chamber, the first cooling layer may be disposed between a position (arrangement position) of the substrate in the processing chamber and the first end surface, the second cooling layer may be disposed between the position of the substrate in the processing chamber and the second end surface, the first heating layer may be disposed between the position of the substrate and the first cooling layer, and the second heating layer may be disposed between the position of the substrate and the second cooling layer. With such configuration, the heating and the cooling are performed on each of two different surfaces of the substrate. Therefore, the substrate can be sufficiently heated and cooled within a shorter period of time. Further, in the case of sequentially heating and cooling the substrate, the heated substrate can be more effectively cooled.
In accordance with a second aspect, there is provided a processing system including: a plurality of film forming apparatuses; the substrate processing device described above; and a measuring device. The film forming apparatuses are configured to form magnetic layers on substrates, respectively. The substrate processing device is configured to process the substrates having the magnetic layers formed by the film forming apparatuses one by one. The measuring device is configured to measure electromagnetic characteristic values of the substrates having the magnetic layers formed by the film forming apparatuses and the substrates processed by the substrate processing device one by one. With such configuration, the magnet unit, the support unit for mounting the substrate, the heating unit and the cooling unit, which are required to perform the magnetization process and the annealing process on the substrate having the magnetic layer, are all included in the single substrate processing device that processes the substrates one by one. Therefore, the magnetization process and the annealing process can be performed on the substrates one by one and, further, the electromagnetic characteristic values of the substrates having the magnetic layers formed by the film forming apparatuses and the substrates processed by the substrate processing device one by one.
Further, in the second aspect, the processing system may further include an atmospheric transfer chamber, and the measuring device may be connected to the atmospheric transfer chamber. With such configuration, since the measuring device can be installed through the atmospheric transfer chamber of the processing system, restrictions on the installation location of the measuring device can be reduced and, thus, the installation of the measuring device can be easily performed.
Further, in the second aspect, each of the electromagnetic characteristic values may be a magnetoresistance ratio. With such configuration, by measuring the magnetoresistance ratio of the substrate, the electromagnetic characteristic of the substrate can be satisfactorily evaluated.
As described above, it is possible to provide the substrate processing device and the processing system capable of performing on the substrates one by one a magnetization process and an annealing process after the film forming process in the MRAM manufacturing process.
Hereinafter, various embodiments will be described in detail with reference to the drawings. Like reference numerals will be used for like parts throughout the drawings.
The substrate processing device 10 includes a substrate processing device 10, a magnet unit 2, a power supply EF, wire portions 3a and 3b, a yoke 4, a cooling unit CR, a heating unit HT, a power supply ES, a gas supply unit GS, a gate valve RA, a chiller unit TU, and a support unit PP (including three or more support pins PA, the same hereinafter). A processing chamber 1 defines a processing space Sp where the wafer W (substrate) is processed. The processing chamber 1 includes a first wall 1a, a second wall 1b, and a gas exhaust line 1c. The support unit PP, the heating unit HT, and the cooling unit CR are accommodated in the processing chamber 1.
The first wall 1a includes a first heat insulating layer 1a1. The second wall 1b includes a second heat insulating layer 1bl. The magnet unit 2 includes a first core portion 2a and a second core portion 2b. The first core portion 2a has a first end surface 2a1. The second core portion 2b has a second end surface 2b1.
In the processing chamber 1, the wafer W is supported by the support unit PP. The wafer W is transferred from a transfer chamber 121 into the processing space Sp of the processing chamber 1 through a gate valve RA by a transfer robot Rb2 shown in
The magnet unit 2 is an electromagnet and generates a magnetic field by a current supplied from the power supply EF to the wire portions 3a and 3b. The wire portion 3a is a copper wire or the like wound around the first core portion 2a, and the wire portion 3b is a copper wire wound around the second core portion 2b. The first end surface 2a1 corresponds to a first magnetic pole of the magnet unit 2, and the second end surface 2b1 corresponds to a second magnetic pole of the magnet unit 2. The first magnetic pole and the second magnetic pole may be, e.g., an N pole and an S pole, respectively. The first end surface 2a1 and the second end surface 2b1 extend in parallel to each other and are opposite to each other while being spaced apart from each other. The wire portion 3a is disposed to surround the first core portion 2a, and the wire portion 3b is disposed to surround the second core portion 2b. The first core portion 2a and the second core portion 2b are made of metal, e.g., iron or the like, and cause the magnetic force lines generated by the wire portions 3a and 3b to converge at the first end surface 2a1 and the second end surface 2b1. The processing chamber 1 is disposed between the first end surface 2a1 of the magnet unit 2 and the second end surface 2b1 of the magnet unit 2. The first core 2a (the first end surface 2a1) of the magnet unit 2 is disposed above the first wall 1a of the processing chamber 1 in a direction towards the outside the processing chamber 1. The second core portion 2b of the magnet unit 2 (the second end surface 2b1) is disposed above the second wall 1b of the processing chamber 1 in a direction towards the outside the processing chamber 1. The first wall 1a may be in contact with the first end surface 2a1. The second wall 1b may be in contact with the second end surface 2b1.
The first heat insulating layer 1a1 is disposed in the first wall 1a. The first heat insulating layer 1a1 is, e.g., a water cooling jacket disposed in the first wall 1a. The first heat insulating layer 1a1 may be in contact with the first end surface 2a1. The second heat insulating layer 1b1 is disposed in the second wall 1b. The second heat insulating layer 1b1 is, e.g., a water cooling jacket disposed in the second wall 1b. The second heat insulating layer 1b1 may be in contact with the second end surface 2b1. The water cooling jacket of the first heat insulating layer 1a1 and the water cooling jacket of the second heat insulating layer 1b1 have lines connected to the chiller unit TU. The chiller unit TU suppresses heat transfer (insulates heat) between the processing chamber 1 and the magnet unit 2 by circulating a coolant through the lines (the first heat insulating layer 1a1 and the second heat insulating layer 1b1). The first heat insulating layer 1a1 and the second heat insulating layer 1b1 may be made of, e.g., a fiber-based or a foam-based heat insulating material. In this case, the heat insulating material may be disposed between the first wall 1a and the first end surface 2a1 of the first core portion 2a and between the second wall 1b and the second end surface 2b1 of the second core portion 2b.
When the substrate processing device 10 is installed in the processing system 100, the first end surface 2a1 and the second end surface 2b1 extend in a direction perpendicular to the vertical direction, and the first end surface 2a1 is positioned above the second end surface 2b1 in the vertical direction.
When viewed from the wafer W supported by the support unit PP in the processing space Sp, the wafer W is disposed between (covered by) the first end surface 2a1 and the second end surface 2b1. In other words, when viewed from the first core portion 2a of the magnet unit 2, the wafer W is disposed to be covered by the first end surface 2a1. Further, when viewed from the second core portion 2b of the magnet unit 2, the wafer W is disposed to be covered by the second end surface 2b1. Magnetic force lines generated by the magnet unit 2 are perpendicular to the wafer W supported by the support unit PP in the processing space Sp. A magnetic field of about 0.1 to 2 [T] may be generated on the wafer W by the magnet unit 2.
The heating unit HT heats the wafer W supported by the support unit PP. The heating unit HT may be, e.g., a resistance heater, an infrared heater, a lamp heater, or the like. The heating unit HT is operated by power supplied from the power supply ES. The heating unit HT is configured to cover the entire wafer W supported by the support unit PP when viewed from the first wall 1a and/or the second wall 1b, so that the entire surface of the wafer W (the upper surface and/or the backside of the wafer W) can be heated by the heating unit HT.
The cooling unit CR injects a cooling gas supplied from the gas supply device GS into the processing space Sp. The cooling unit CR has at least a portion that is provided at the first wall 1a in the processing chamber 1. The cooling gas may be a rare gas such as N2 gas or He gas. The cooling unit CR is configured to cover the entire wafer W supported by the support unit PP when viewed from the first wall 1a and/or the second wall 1b, so that the entire surface of the wafer W (the upper surface and/or the backside of the wafer W) can be cooled by the cooling unit CR. The cooling gas used to cool the wafer W is exhausted to the outside through the gas exhaust line 1c communicating with the processing space Sp. A gas exhaust pump (not shown) is disposed with the gas exhaust line 1c.
The driving of the power supply ES for supplying power to the heating unit HT, the driving of the gas supply unit GS for supplying the cooling gas to the cooling unit CR, the driving of the power supply EF for supplying power to the magnet unit 2, and the driving of the chiller unit TU for circulating a coolant through the first heat insulating layer 1a1 and the second heat insulating layer 1b1 are controlled under the control of a controller Cnt of the processing system 100 which will be described later. The controller Cnt is configured to control an opening/closing mechanism of the gate valve RA (further the driving of a power supply DR for supplying power to a moving mechanism MV in the case of the configuration shown in
In accordance with the above-described substrate processing device 10, the magnet unit 2, the support unit PP, the heating unit HT, and the cooling unit CR, which are required to perform the magnetization process and the annealing process on the wafer W having the magnetic layer, are all included in the single substrate processing device 10 that processes the substrates one by one. Therefore, the magnetization process and the annealing process can be performed on wafers one by one. Accordingly, the substrate processing device 10 can perform the magnetization process and the annealing process on the wafers one by one after the film forming process in the MRAM manufacturing process. Further, in the magnet unit 2, the magnetic force lines generated between the first end surface 2a1 of the magnet unit 2 and the second end surface 2b1 of the magnet unit 2 may be perpendicular to the extending direction of the wafer W supported by the support unit PP (perpendicular to the surface of the substrate).
The processing chamber 1 shown in
The processing system 100 includes stages 122a to 122d, containers 124a to 124d, a loader module LM, a transfer robot Rb1, the controller Cnt, and a characteristic value measuring device OC, load-lock chambers LL1 and LL2, and gates GA1 and GA2. The processing system 100 further includes a plurality of transfer chambers 121, a plurality of processing chambers 100a, a plurality of gates GB1, and a plurality of gates GB2. The transfer chamber 121 includes the transfer robot Rb2.
The gate GA1 is disposed between the load-lock chamber LL1 and a portion of the transfer chamber 121 in contact with the load-lock chamber LL1. The wafer W is transferred between the load-lock chamber LL1 and the transfer chamber 121 through the gate GA1 by the transfer robot Rb2. The gate GA2 is disposed between the load-lock chamber LL2 and a portion of the transfer chamber 121 in contact with the load-lock chamber LL2. The wafer W is transferred between the load-lock chamber LL2 and the transfer chamber 121 through the gate GA2 by the transfer robot Rb2.
The gate GB1 is disposed between two adjacent transfer chambers 121. The wafer W is transferred between the two transfer chambers 121 through the gate GB1 by the transfer robot Rb2. The gate GB2 is disposed between the processing chamber 100a and a portion of the transfer chamber 121 in contact with the processing chamber 100a. The wafer W is transferred between the processing chamber 100a and the transfer chamber 121 through the gate GB2 by the transfer robot Rb2.
The stages 122a to 122d are arranged along one side of the loader module LM. The containers 124a to 124d are mounted on the stages 122a to 122d, respectively. The wafers W may be accommodated in each of the containers 124a to 124d.
The transfer robot Rb1 is disposed in the loader module LM. The transfer robot Rb1 transfers the wafer W from any one of the containers 124a to 124d and transfers the wafer W to the load-lock chamber LL1 or the load-lock chamber LL2.
The load-lock chambers LL1 and LL2 are arranged along the other side of the loader module LM and connected to the loader module LM. The load-lock chambers LL1 and LL2 constitute a preliminary decomposition chamber. The load-lock chambers LL1 and LL2 are connected to the transfer chamber 121 through the gates GA1 and GA2, respectively.
The transfer chamber 121 is a depressurization chamber. The transfer robot Rb2 is disposed in the transfer chamber 121. The substrate processing device 10 is connected to the transfer chamber 121. The transfer robot Rb2 transfers the wafer W from the load-lock chamber LL1 or LL2 to the substrate processing device 10 through the gate GA1 or GA2, respectively.
The processing system 100 further includes the characteristic value measuring device OC. The characteristic value measuring device OC may be connected to an atmosphere transfer chamber (including the loader module LM) of the processing system 100. In the embodiment shown in
The controller Cnt is a computer including a processor, a storage unit, an input device, a display device, and the like. The controller Cnt controls the respective components of the processing system 100. The controller Cnt is connected to the transport robot Rb1, the transport robot Rb2, the characteristic value measuring device OC, and various devices (e.g., the substrate processing device 10 and the like) installed in each of the processing chambers 100a. In the substrate processing device 10, the controller Cnt is connected to the power supply ES, the power supply EF (further connected to the power supply DR in the case of the configuration shown in
In the processing system 100 according to the above-described embodiment, it is possible to perform the film forming process, the magnetization and annealing process, and the process of measuring the characteristic value on the wafers W one by one. The film forming process is performed in two or more of the processing chambers 100a (corresponding to a plurality of film forming apparatuses). After the film forming process, the magnetization and annealing process is performed by the substrate processing device 10 disposed in any one of the processing chambers 100a. After the film forming process and the magnetization and annealing process, the process of measuring the characteristic value such as a magnetoresistance ratio of the wafer W is performed by the characteristic value measuring device OC.
In the case of the yoke 4 shown in
In the case of the yoke 4 shown in
Hereinafter, specific aspects of the heating unit HT and the cooling unit CR arranged in the processing chamber 1 will be described with reference to
The cooling unit CR shown in
The substrate processing device 10 having the configuration shown in
In the configuration shown in
The cooling unit CR shown in
In the processing chamber 1 shown in
In the configuration shown in
In the configuration shown in
In the processing chamber 1 shown in
In the processing chamber 1 shown in
In the processing chamber 1 shown in
In the processing chamber 1 shown in
In the configuration shown in
Hereinafter, the processing shown in
In step ST2 subsequent to step ST1, the wafer W is heated to a predetermined temperature by the heating unit HT. When the heating unit HT is the resistance heater shown in
In step ST3 subsequent to step ST2, the temperature of the wafer W is maintained at the predetermined temperature for a predetermined period of time. In the step ST3, the temperature of the wafer W is maintained in a range from 300° C. and 500° C. for 1 sec to 10 min.
In step ST4 subsequent to step ST3, the wafer W is cooled. In step ST4, the wafer W is cooled at a cooling speed of 0.5° C./sec or higher. The cooling speed can be controlled by the flow rate of the cooling gas and the pressure in the processing chamber 1. The cooling speed increases as the flow rate of the cooling gas increases and the pressure in the processing chamber 1 becomes higher.
In the case that the heating unit HT is the resistance heater shown in
In the case that the heating unit HT is the resistance heater shown in
In the case that the heating unit HT is the infrared heater or the lamp heater shown in
In step ST5 subsequent to step ST4, the wafer W is unloaded from the processing chamber 1 through the gate valve RA. The unloading of the wafer W in step ST5 can be started when the temperature of the wafer W becomes lower than or equal to a temperature at which the wafer W can be unloaded. The time period required to cool the wafer W in step ST5 may be previously measured and determined.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the invention. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made departing from the spirit of the invention. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2017-032255 | Feb 2017 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2018/006163 | 2/21/2018 | WO | 00 |
