Substrate treating apparatus with parallel gas supply pipes and a gas exhaust pipe

Description

BACKGROUND OF THE INVENTION

(1) Field of the Invention

This invention relates to a substrate treating apparatus for performing a series of treatments of substrates such as semiconductor wafers, glass substrates for liquid crystal displays, glass substrates for photomasks, and substrates for optical disks (hereinafter called simply “substrates”).

(2) Description of the Related Art

Conventionally, a substrate treating apparatus is used to form a resist film on substrates, allows the substrates having the resist film formed thereon to be exposed in a separate exposing machine, and develops the exposed substrates. Specifically, the substrate treating apparatus includes a plurality of blocks each having various chemical treating units such as coating units for forming resist film and heat-treating units arranged with a single main transport mechanism. This apparatus transports substrates to each block to be treated therein (as disclosed in Japanese Unexamined Patent Publication No. 2003-324139, for example).

The conventional apparatus with such a construction has the following drawback.

In the conventional apparatus, the main transport mechanism goes through five to 10 transporting steps for treating each substrate in its block, and each transporting step takes several seconds. Supposing that the number of transporting steps is six and each step takes five seconds, the throughput in the block can be raised up to 30 seconds per substrate (or 120 substrates per hour). However, there is not much room for reducing the number of transporting steps for the single main transport mechanism or shortening the time for each transporting step. Hence, it is difficult to achieve a further improvement in throughput of each block. It is therefore difficult to improve the throughput of the entire apparatus. One possible solution is to employ multiple main transport mechanisms. However, an increase in the number of main transport mechanisms in each block entails the inconvenience of increasing the chemical treating units and heating units, thereby enlarging the footprint.

SUMMARY OF THE INVENTION

One of the objectives of this invention is to provide a substrate treating apparatus that can improve throughput without enlarging the footprint of the substrate treating apparatus.

In one embodiment, a substrate treating apparatus comprising a plurality of substrate treatment lines each including a plurality of main transport mechanisms arranged horizontally, and a plurality of treating units provided for each of the main transport mechanisms for treating substrates; each of the substrate treatment lines carrying out a series of treatments of the substrates, with each of the main transport mechanisms transporting the substrates to the treating units associated therewith, and transferring the substrates to the other main transport mechanism horizontally adjacent thereto; wherein the substrate treatment lines are arranged vertically.

According to this embodiment, the plurality of substrate treatment lines are arranged vertically, so that the substrates are treated in parallel through the respective substrate treatment lines. This realizes an increased throughput of the substrate treating apparatus. Since the substrate treatment lines are arranged vertically, an increase in the installation area of the substrate treating apparatus can be avoided.

The horizontal arrangement of the main transport mechanisms is arbitrary. For example, the main transport mechanisms may be arranged in one row or a plurality of rows extending in one direction. The main transport mechanisms may be arranged at different points on an imaginary curve, or may be arranged in a zigzag pattern. The arrangement of the treating units associated with each main transport mechanism is also arbitrary. The treating units may be arranged horizontally, stacked vertically, or arranged crisscross in a matrix form.

In an alternate embodiment, the main transport mechanisms and the treating units in the respective substrate treatment lines may be in substantially the same arrangement in plan view. One of the benefits realized by this arrangement is that the apparatus construction can be simplified.

The substrate treating apparatus may further comprise gas supply openings for supplying a gas into transporting spaces where the main transport mechanisms are installed, and gas exhaust openings for exhausting the gas from the transporting spaces. This provides the benefit of maintaining the transportation areas substantially free from particulate matter.

In addition, the area of the transporting spaces for each substrate treatment line may be blocked off and separate gas supply openings and gas exhaust openings can be provided for each substrate treatment line. This will result in even cleaner transporting spaces.

The gas supply openings may be formed in a blowout unit and the gas exhaust openings formed in an exhaust unit with at least one of the gas blowout unit and the gas exhaust unit blocking off atmosphere for each of the substrate treatment lines. This realizes a simplified apparatus construction.

The gas supply openings may be arranged in a position higher than the gas exhaust openings further reducing possibility of particulate contamination.

The gas supply openings may be arranged over the transporting spaces, and the gas exhaust openings under the transporting spaces. This arrangement results in downward gas currents and helps to keep the transporting spaces cleaner.

In still another embodiment, the apparatus may further comprise an indexer's transport mechanism for transporting the substrates to and from a cassette for storing a plurality of substrates, wherein the indexer's transport mechanism transfers the substrates to and from an end transport mechanism which is one of the main transport mechanisms located in one end region of each of the substrate treatment lines, the indexer's transport mechanism transferring the substrates to and from an upper one of the end transport mechanisms at a height adjacent a lower portion of the upper one of the end transport mechanisms, and transferring the substrates to and from a lower one of the end transport mechanisms at a height adjacent an upper portion of the lower one of the end transport mechanisms. Since the upper and lower substrate transfer positions are close to each other, the indexer's transport mechanism moves a reduced amount vertically. This improves the operating efficiency of the indexer's transport mechanism.

The apparatus may further comprise a receiver provided between the indexer's transport mechanism and each end transport mechanism for receiving the substrates, the indexer's transport mechanism transferring the substrates through the receiver. The transfer of substrates through the receiver can improve the transporting efficiency over the case of transferring the substrates directly between the transport mechanisms.

In yet another embodiment, a substrate treating apparatus comprises a plurality of treating blocks arranged horizontally, each including treating units arranged on each of upper and lower stories, and a main transport mechanism provided for each of the stories for transporting substrates to the treating units on each of the stories; wherein a series of treatments is performed for the substrates by transferring the substrates between the main transport mechanisms of the treating blocks adjacent each other on the same story.

According to this embodiment, substrates are transported to and from the plurality of treating blocks arranged horizontally, and in parallel through the different stories. A series of treatments are performed on the substrates in parallel on the respective stories, each having the plurality of treating blocks. This realizes an increased throughput of the substrate treating apparatus. Since the treating blocks have a layered structure with a plurality of stories arranged vertically, an increase in the installation area of the substrate treating apparatus can be avoided.

In the embodiment noted above, each of the treating blocks may have a housing for collectively accommodating the treating units and the main transport mechanisms included in each of the treating blocks. Then, each treating block can be handled as a unit, thereby simplifying the manufacture and repair of the substrate treating apparatus.

Each of the treating blocks may further include a shielding plate disposed between the respective stories, gas supply openings for supplying a clean gas into a transporting space of the main transport mechanism on each story, and gas exhaust openings for exhausting the gas from the transporting space of the main transport mechanism on each story. This construction can prevent any particles generated by each main transport mechanism from reaching the other story. The transporting space on each story can also be kept clean.

In the above construction, the gas supply openings may be formed in a blowout unit, and the gas exhaust openings in an exhaust unit, at least one of the gas blowout unit and the gas exhaust unit acting as the shielding plate. This simplifies the apparatus construction.

The gas supply openings of each transporting space may be arranged in a position higher than the gas exhaust openings of the transporting space. Then, the air currents in each transporting space form a down-flow, which can keep the transporting space even cleaner.

The apparatus may further comprise an indexer's transport mechanism for transporting the substrates to and from a cassette for storing a plurality of substrates, and for transporting the substrates to the main transport mechanisms on the respective stories of an end one of the treating blocks, wherein the indexer's transport mechanism transfers the substrates, in positions adjacent each other, to and from the main transport mechanisms on the respective stories of the end one of the treating blocks. This enables the indexer's transport mechanism to perform reduced amount of vertical movement, thereby improving the operating efficiency of the indexer's transport mechanism.

The above construction may further comprise substrate receivers provided between the main transport mechanisms on the respective stories of the end one of the treating blocks and the indexer's transport mechanism, the indexer's transport mechanism transferring the substrates through each of the receivers. This construction realizes an improved transporting efficiency compared to transferring the substrates directly between the transport mechanisms.

In a still another embodiment, a substrate treating apparatus comprises an indexer section including an indexer's transport mechanism for transporting substrates to and from a cassette for storing a plurality of substrates; a coating block disposed adjacent the indexer section, and including coating units and heat-treating units arranged on each of upper and lower stories for forming resist film on the substrates, and a main transport mechanism disposed on each story for transporting the substrates to and from the coating units and the heat-treating units on the each story; a developing block disposed adjacent the coating block, and including developing units and heat-treating units arranged on each of upper and lower stories for developing the substrates, and a main transport mechanism disposed on each story for transporting the substrates to and from the developing units and the heat-treating units on the each story; and an interface section disposed adjacent the developing block, and including an interface's transport mechanism for transporting the substrates to and from an exposing machine provided separately from the apparatus; wherein the indexer's transport mechanism transfers the substrates to and from the main transport mechanism on each story of the coating block; the main transport mechanism on each story of the coating block transfers the substrates to and from the main transport mechanism on the same story of the developing block; and the interface's transport mechanism transfers the substrates to and from the main transport mechanism on each story of the developing block.

According to this embodiment, the indexer's transport mechanism takes the substrates out of the cassette in order, and transfers these substrates to the main transport mechanisms on the respective stories of the coating block. Each main transport mechanism of the coating block transports the substrates to the associated coating units and heat-treating units. Each treatment unit carries out a predetermined treatment of the substrates. The main transport mechanism on each story of the coating block transfers the substrates having resist film formed thereon to the main transport mechanism on the same story of the adjoining developing block. Each main transport mechanism of the developing block transfers the substrates to the interface's transport mechanism of the adjoining interface section. The interface's transport mechanism transfers the received substrates to the exposing machine, which is an external apparatus. The exposed substrates are returned to the interface section again. The interface section's transport mechanism transfers the substrates to the main transport mechanism on each story of the developing block. Each main transport mechanism of the developing block transports the substrates to the associated developing units and heat-treating units. Each treating unit carries out a predetermined treatment of the substrates. The main transport mechanism on each story of the developing block transfers the developed substrates the main transport mechanism on the same story of the adjoining coating block. The main transport mechanism on each story of the coating block transfers the substrates to the indexer's transport mechanism of the indexer section. The indexer's transport mechanism stores the substrates in a predetermined cassette. According to this construction, as described above, the coating block and developing block carry out the resist film forming treatment and developing treatment in parallel on each story. This construction, therefore, increases the treating efficiency of the substrate treating apparatus. Since the coating block and developing block have a layered structure with a plurality of stories arranged vertically, an increase in the footprint can be avoided.

The apparatus may further comprise a controller for controlling the interface's transport mechanism to transport the substrates to the exposing machine in an order in which the indexer's transport mechanism has taken the substrates out of the cassette. This helps with tracking multiple substrates within the apparatus.

The interface section may further include a plurality of buffers to temporarily store the substrates. The controller being arranged to control the interface's transport mechanism, when the substrates are delivered from the developing block in an order different from the order in which the indexer's transport mechanism has taken the substrates out of the cassette, to receive the substrates and transport the substrates to the buffers. The substrates are transferred to the buffers in the event that the substrates are delivered from the developing block in an order different from the order in which the indexer's transport mechanism initially took the substrates out of the cassette. This allows the developing block to deliver succeeding substrates. Further, the order of transporting the substrates from the interface section to the exposing machine may be adjusted to the order in which the indexer's transport mechanism has taken the substrates out of the cassette. Thus, the substrates can be treated conveniently in a predetermined order.

The coating units for forming resist film on the substrates may include a resist film coating unit for applying a resist film material to the substrates, and an anti-reflection film coating unit for applying an anti-reflection film forming solution to the substrates.

This specification discloses several embodiments directed to the following substrate treating apparatus:

(1) A substrate treating apparatus is provided wherein the series of treatments carried out in each of the substrate treatment lines is the same.

According to the embodiment defined in (1) above, the apparatus construction can be simplified.

(2) A substrate treating apparatus is provided wherein said treating units include solution treating units for treating the substrates with a solution, and heat-treating units for heat-treating the substrates.

(3) A substrate treating apparatus is provided in another embodiment wherein said treating units include solution treating units for treating the substrates with a solution, and heat-treating units for heat-treating the substrates.

According to the embodiment defined in (2) and (3) above, various treatments can be carried out for the substrates.

(4) A substrate treating apparatus is provided further comprising a single, second gas supply pipe for supplying a clean gas to each of the treating units associated with the respective main transport mechanisms arranged vertically.

According to the embodiment defined in (4) above, the installation area can be reduced.

(5) A substrate treating apparatus is provided in which the main transport mechanisms on the respective stories of each treating block are arranged in the same position in plan view.

According to the embodiment defined in (5) above, the apparatus construction can be simplified.

(6) A substrate treating apparatus is provided in which the treating units arranged vertically of each treating block perform the same treatment.

According to the embodiment defined in (6) above, the apparatus construction can be simplified.

(7) A substrate treating apparatus is provided further comprising a single, second gas supply pipe for supplying a clean gas to the treating units arranged vertically.

According to the embodiment defined in (7) above, the installation area can be reduced.

(8) A substrate treating apparatus is provided wherein the treating units on each story are stacked.

According to the embodiment defined in (8) above, the apparatus construction can be simplified.

BRIEF DESCRIPTION OF THE DRAWINGS

For the purpose of illustrating the invention, there are shown in the drawings several forms which are presently preferred, it being understood, however, that the invention is not limited to the precise arrangement and instrumentalities shown.

FIG. 1 is a plan view showing an outline of a substrate treating apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic side view showing an arrangement of treating units included in the substrate treating apparatus;

FIG. 3 is a schematic side view showing an arrangement of treating units included in the substrate treating apparatus;

FIG. 4 is a view in vertical section taken on line a-a of FIG. 1;

FIG. 5 is a view in vertical section taken on line b-b of FIG. 1;

FIG. 6 is a view in vertical section taken on line c-c of FIG. 1;

FIG. 7 is a view in vertical section taken on line d-d of FIG. 1;

FIG. 8A is a plan view of coating units;

FIG. 8B is a sectional view of a coating unit,

FIG. 9 is a perspective view of a main transport mechanism;

FIG. 10 is a control block diagram of the substrate treating apparatus according to an embodiment of the present invention;

FIG. 11 is a flow chart of a series of treatments of wafers W; and

FIG. 12 is a view schematically showing operations repeated by each transport mechanism.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

Embodiments of this invention will be described in detail hereinafter with reference to the drawings.

FIG. 1 is a plan view showing an outline of a substrate treating apparatus according to an embodiment of the present invention. FIGS. 2 and 3 are schematic side views showing an arrangement of treating units included in the substrate treating apparatus. FIGS. 4 through 7 are views in vertical section taken on lines a-a, b-b, c-c and d-d of FIG. 1, respectively.

This embodiment provides a substrate treating apparatus for forming resist film on substrates (e.g. semiconductor wafers) W, and developing exposed wafers or substrates W. This apparatus is divided into an indexer section (hereinafter called “ID section”) 1, a treating section 3, and an interface section (hereinafter called “IF section”) 5. The ID section 1 and IF section 5 are arranged adjacent to and on the opposite sides of the treating section 3. An exposing machine EXP which is an external apparatus separate from this apparatus is disposed adjacent to the IF section 5.

The ID section 1 takes wafers W out of each cassette C, which stores a plurality of wafers W, and deposits wafers W in the cassette C. The ID section 1 has a cassette table 9 for receiving cassettes C and an ID's transport mechanism T_IDfor transporting wafers W to and from each cassette C. The ID's transport mechanism T_IDcorresponds to the indexer's transport mechanism in this embodiment.

The treating section 3 includes four main transport mechanisms T₁, T₂, T₃and T₄. The treating section 3 is divided into a first to a fourth cells 11, 12, 13 and 14 associated with the respective main transport mechanisms T₁, T₂, T₃and T₄. The first and third cells 11 and 13 are used for forming resist film on the wafers W. The second and fourth cells 12 and 14 are used for developing the wafers W. Each of the cells 11-14 has a plurality of treating units (to be described hereinafter). The main transport mechanisms T₁, T₂, T₃and T₄transport the wafers W to and from the treating units of the respective cells 11-14.

The first and second cells 11 and 12 juxtaposed horizontally are connected to each other to form a substrate treatment line Lu extending between the ID section 1 and IF section 5. The third and fourth cells 13 and 14 juxtaposed horizontally are also connected to each other to form a substrate treatment line Ld extending between the ID section 1 and IF section 5. These two substrate treatment lines Lu and Ld are arranged one over the other. In other words, the treating section 3 has a layered structure with the plurality of substrate treatment lines Lu and Ld arranged vertically.

The substrate treatment lines Lu and Ld are arranged one over the other to adjoin each other. That is, the first cell 11 is located over the third cell 13, and the second cell 12 over the fourth cell 14. Therefore, the treating section 3 may be constructed easily by horizontally arranging a treating block Ba having the first and third cells 11 and 13 formed integrally, and a treating block Bb having the second and fourth cells 12 and 14 formed integrally.

The IF section 5 transfers wafers W to and from the exposing machine EXP. The IF section 5 has IF's transport mechanisms T_IFfor transporting wafers W. The IF's transport mechanisms T_IFinclude a first transport mechanism T_IFAand a second transport mechanism T_IFB. The first transport mechanism T_IFAand second transport mechanism T_IFBcorrespond to the interface's transport mechanisms in this embodiment.

The ID's transport mechanism T_IDtransfers wafers W to and from the main transport mechanisms T₁and T₃of the first and third cells 11 and 13 located adjacent the ID section 1. The main transport mechanisms T₁-T₄of the cells 11-14 transfer wafers W to and from the other cells connected thereto on the same stories. The IF's transport mechanisms T_IFtransfer wafers W to and from the main transport mechanisms T₂and T₄of the second and fourth cells 12 and 14 located adjacent the IF section 5. As a result, wafers W are transported between the ID section 1 and IF section 5 in parallel through the two substrate treatment lines Lu and Ld, to undergo a series of treatments in each of the substrate treatment lines Lu and Ld. The main transport mechanisms T₁and T₃correspond to the end transport mechanisms in this embodiment.

This apparatus includes receivers PASS₁and PASS₃for transferring wafers W between the ID's transport mechanism T_IDand main transport mechanisms T₁and T₃. Similarly, a receiver PASS₂is provided for transferring wafers W between the main transport mechanisms T₁and T₂, and a receiver PASS₄for transferring wafers W between the main transport mechanisms T₃and T₄. Further, receivers PASS₅and PASS_Eare provided for transferring wafers W between the main transport mechanisms T₂and T₄and IF's transport mechanisms T_IF. Each of the receivers PASS₁-PASS_Ehas a plurality of support pins projecting therefrom, for receiving a wafer W in a substantially horizontal position on these support pins.

[ID Section 1]

The ID section 1 will be described next. The cassette table 9 can receive four cassettes C arranged in a row. The ID's transport mechanism T_IDhas a movable base 21 for moving horizontally alongside the cassette table 9 in the direction of arrangement of the cassettes C, a lift shaft 23 vertically extendible and contractible relative to the movable base 21, and a holding arm 25 swivelable on the lift shaft 23, and extendible and retractable radially of the swivel motion, for holding a wafer W. The ID's transport mechanism TID can transport wafers W between each cassette C and the receivers PASS₁and PASS₃.

[First Cell 11]

A belt-like transporting space A1 for transporting wafers W extends through the center of the first cell 11 and parallel to the direction of arrangement of the first and second cells 11 and 12. The treating units of the first cell 11 are coating units 31 for applying a treating solution to the wafers W, and heat-treating units 41 for heat-treating the wafers W. The coating units 31 are arranged on one side of the transporting space A₁, while the heat-treating units 41 are arranged on the other side thereof.

The coating units 31 are arranged vertically and horizontally, each facing the transporting space A1. In this embodiment, four coating units 31 in total are arranged in two columns and two rows. The coating units 31 include anti-reflection film coating units BARC for forming anti-reflection film on the wafers W, and resist film coating units RESIST for forming resist film on the wafers W. The coating units 31 correspond to the solution treating units in this embodiment.

Reference is made to FIGS. 8A and 8B. FIG. 8A is a plan view of the coating units 31. FIG. 8B is a sectional view of a coating unit 31. Each coating unit 31 includes a spin holder 32 for holding and spinning a wafer W, a cup 33 surrounding the wafer W, and a supply device 34 for supplying a treating solution to the wafer W. The two sets of spin holders 32 and cups 33 at each level are juxtaposed with no partition wall or the like in between. The supply device 34 includes a plurality of nozzles 35, a gripper 36 for gripping one of the nozzles 35, and a nozzle moving mechanism 37 for moving the gripper 36 to move one of the nozzles 35 between a treating position above the wafer W and a standby position away from above the wafer W. Each nozzle 35 has one end of a treating solution pipe 38 connected thereto. The treating solution pipe 38 is arranged movable to permit movement of the nozzle 35 between the standby position and treating position. The other end of each treating solution pipe 38 is connected to a treating solution source (not shown). Specifically, in the case of antireflection film coating units BARC, the treating solution sources supply different types of treating solution for antireflection film to the respective nozzles 35. In the case of resist film coating units RESIST, the treating solution sources supply different types of resist film material to the respective nozzles 35.

The nozzle moving mechanism 37 has first guide rails 37a and a second guide rail 37b. The first guide rails 37a are arranged parallel to each other and outwardly of the two cups 33 arranged sideways. The second guide rail 37b is slidably supported by the two first guide rails 37a and disposed above the two cups 33. The gripper 36 is slidably supported by the second guide rail 37b. The first guide rails 37a and second guide rail 37b take guiding action substantially horizontally and in directions substantially perpendicular to each other. The nozzle moving mechanism 37 further includes drive members (not shown) for sliding the second guide rail 37b, and sliding the gripper 36. The drive members are operable to move the nozzle 35 gripped by the gripper 36 to the treating positions above the two spin holders 32.

Referring back to FIG. 1 and FIG. 3, the plurality of heat-treating units 41 are arranged vertically and horizontally, each facing the transporting space A1. In this embodiment, three heat-treating units 41 can be arranged horizontally, and five heat-treating units 41 can be stacked vertically. Each heat-treating unit 41 has a plate 43 for receiving a wafer W. The heat-treating units 41 include cooling units CP for cooling wafers W, heating and cooling units PHP for carrying out heating and cooling treatments continually, and adhesion units AHL for heat-treating wafers W in an atmosphere of hexamethyl silazane (HMDS) vapor in order to promote adhesion of coating film to the wafers W. As shown in FIG. 5, each heating and cooling unit PHP has two plates 43, and a local transport mechanism (not shown) for moving a wafer W between the two plates 43. The various types of heat-treating units CP, PHP and AHL are arranged in appropriate positions.

Reference is made to FIG. 9. FIG. 9 is a perspective view of the main transport mechanism T₁. The main transport mechanism T₁has two guide rails 51 for providing vertical guidance, and a guide rail 52 for providing horizontal guidance. The vertical guide rails 51 are fixed opposite each other at one side of the transporting space A₁. In this embodiment, the vertical guide rails 51 are arranged at the side adjacent the coating units 31. The horizontal guide rail 52 is slidably attached to the vertical guide rails 51. The horizontal guide rail 52 has a base 53 slidably attached thereto. The base 53 extends transversely, substantially to the center of the transporting space A₁. Further, drive members (not shown) are provided for vertically moving the horizontal guide rail 52, and horizontally moving the base 53. The drive members are operable to move the base 53 to positions for accessing the coating units 31 and heat-treating units 41 arranged vertically and horizontally.

The base 53 has a turntable 55 rotatable about a vertical axis Q. The turntable 55 has two holding arms 57a and 57b horizontally movably attached thereto for holding wafers W, respectively. The two holding arms 57a and 57b are arranged vertically close to each other. Further, drive members (not shown) are provided for rotating the turntable 55, and moving the holding arms 57a and 57b. The drive members are operable to move the turntable 55 to positions opposed to the coating units 31, heat-treating units 41 and receivers PASS₁and PASS₂, and to extend and retract the holding arms 57a and 57b to and from the coating units 31 and so on.

[Third Cell 13]

The third cell 13 will be described next. Like reference numerals are used to identify like parts which are the same as in the first cell 11, and will not be described again. The layout in plan view of the main transport mechanism T₃and treating units in the third cell 13 is substantially the same as in the first cell 11. It can be said, therefore, that the coating units 31 are vertically stacked over the different stories of the first cell 11 and third cell 13. Similarly, it can be said that the heat-treating units 41 also are vertically stacked over the different stories. The arrangement of the various treating units of the third cell 13 as seen from the main transport mechanism T₃is substantially the same as the arrangement of the various treating units of the first cell 11 as seen from the main transport mechanism T₁.

In the following description, when distinguishing the resist film coating units RESIST in the first and third cells 11 and 13, subscripts “1” and “3” will be affixed (for example, the resist film coating units RESIST in the first cell 11 will be referred to as “resist film coating units RESIST₁”).

[First Cell 11 and Third Cell 13]

Reference is made to FIG. 4. Constructions relevant to the first cell 11 and third cell 13 will be described collectively. The receiver PASS₁is disposed between the ID section 1 and first cell 11. The receiver PASS₃is disposed between the ID section 1 and third cell 13. The receivers PASS₁and PASS₃are arranged in plan view at the ends of the transporting spaces A₁and A₃adjacent the ID section 1, respectively. Seen in a sectional view, the receiver PASS₁is disposed at a height adjacent a lower part of the main transport mechanism T₁, while the receiver PASS₃is disposed at a height adjacent an upper part of the main transport mechanism T₃. Therefore, the positions of receiver PASS₁and receiver PASS₃are close to each other for allowing the ID's transport mechanism T_IDto access the receiver PASS₁and receiver PASS₃using only a small amount of vertical movement.

Each of the receiver PASS₁and receiver PASS₃includes a plurality of (two) receivers arranged one over the other. Of the two receivers PASS₁, one PASS_1Aserves to pass wafers W from the ID's transport mechanism T_IDto the main transport mechanism T₁, and the wafers W are deposited on the receiver PASS_1Asolely by the ID's transport mechanism T_ID. The other receiver PASS_1Bserves to pass wafers W from the main transport mechanism T₁to the ID's transport mechanism T_ID, and the wafers W are deposited on the receiver PASS_1Bsolely by the main transport mechanism T₁. Each of the receivers PASS₂, PASS₄, PASS₅and PASS_Edescribed hereinafter similarly includes two receivers used for transferring wafers W in opposite directions.

The receiver PASS₂is disposed between the first cell 11 and second cell 12. The receiver PASS₄is disposed between the third cell 13 and fourth cell 14. The receivers PASS₂and PASS₄are arranged in the same position in plan view. Buffers for temporarily storing wafers W and heat-treating units for heat-treating wafers W (neither being shown) are arranged in appropriate positions above and below the receivers PASS₂and PASS₄.

Each of the transporting spaces A₁and A₃has a first blowout unit 61 for blowing out a clean gas, and an exhaust unit 62 for sucking the gas. Each of the first blowout unit 61 and exhaust unit 62 is in the form of a flat box having substantially the same area as the transporting space A₁in plan view. Each of the first blowout unit 61 and exhaust unit 62 has first blowout openings 61a or exhaust openings 62a formed in one surface thereof. In this embodiment, the first blowout openings 61a or exhaust openings 62a are in the form of numerous small bores f. The first blowout units 61 are arranged over the transporting spaces A₁and A₃with the first blowout openings 61a directed downward. The exhaust units 62 are arranged under the transporting spaces A₁and A₃with the exhaust openings 62a directed upward. The atmosphere in the transporting space A₁and the atmosphere in the transporting space A₃are blocked off by the exhaust unit 62 of the transporting space A₁and the first blowout unit 61 of the transporting space A₃. The first blowout openings 61a correspond to the gas supply ports in this embodiment. The exhaust openings 62a correspond to the gas exhaust ports in this embodiment. The first blowout units 61 correspond to the blowout units in this embodiment.

Referring to FIG. 5, the first blowout units 61 of the transporting spaces A₁and A₃are connected to a common, first gas supply pipe 63. The first gas supply pipe 63 extends laterally of the receivers PASS₂and PASS₄from an upper position of the transporting space A₁to a lower position of the transporting space A₃, and is bent below the transporting space A₃to extend horizontally. The other end of the first gas supply pipe 63 is connected to a gas source not shown. Similarly, the exhaust units 62 of the transporting spaces A₁and A₃are connected to a common, first gas exhaust pipe 64. The first gas exhaust pipe 64 extends laterally of the receivers PASS₂and PASS₄from a lower position of the transporting space A₁to a lower position of the transporting space A₃, and is bent below the transporting space A₃to extend horizontally. As the gas is blown out of each first blowout opening 61a and sucked and exhausted through each exhaust opening 62a of the transporting spaces A₁and A₃, gas currents are formed to flow from top to bottom of the transporting spaces A₁and A₃, thereby keeping each of the transporting spaces A₁and A₃in a clean state.

Each coating unit 31 of the first and third cells 11 and 13 has a pit portion PS extending vertically. The pit portion PS accommodates a second gas supply pipe 65 extending vertically for supplying the clean gas, and a second gas exhaust pipe 66 extending vertically for exhausting the gas. Each of the second gas supply pipe 65 and second gas exhaust pipe 66 branches at a predetermined height in each coating unit 31 to extend substantially horizontally from the pit portion PS. A plurality of branches of the second gas supply pipe 65 are connected to second blowout units 67 for blowing out the gas downward. A plurality of branches of the second gas exhaust pipe 66 are connected for communication to the bottoms of the respective cups 33. The other end of the second gas supply pipe 65 is connected to the first gas supply pipe 63 below the third cell 13. The other end of the second gas exhaust pipe 66 is connected to the first gas exhaust pipe 64 below the third cell 13. As the gas is blown out of the second blowout units 67 and exhausted through the second exhaust pipes 62a, the atmosphere inside each cup 33 is constantly maintained clean, thereby allowing for excellent treatment of the wafer W held by the spin holder 32.

The pit portions PS further accommodate piping of the treating solutions, electric wiring and the like (not shown). Thus, with the pit portions PS accommodating the piping and electric wiring provided for the coating units 31 of the first and third cells 11 and 13, the piping and electric wiring can be reduced in length.

The main transport mechanisms T₁and T₃and treating units of the first cell 11 and third cell 13 are mounted in one housing 75. (See FIG. 4). This housing 75 defines one treating block Ba. The treating block Ba integrating the first cell 11 and third cell 13 corresponds to the coating block in this embodiment. Similarly, the main transport mechanisms T₂and T₄and treating units of the second cell 12 and fourth cell 14 described hereinafter are mounted in a different housing 75. This housing 75 defines another treating block Bb. The treating block Bb integrating the second cell 12 and fourth cell 14 corresponds to the developing block in this embodiment. Thus, with the housings 75 defining the treating blocks Ba and Bb integrating the cells arranged vertically, the treating section 3 may be manufactured and assembled simply.

[Second Cell 12]

The second cell 12 will be described next. Like reference numerals are used to identify like parts which are the same as in the first cell 11 and will not be described again. The second cell 12 has a transporting space A₂formed as an extension of the transporting space A₁.

The treating units of the second cell 12 are developing units DEV for developing wafers W, heat-treating units 42 for heat-treating the wafers W, and an edge exposing unit EEW for exposing peripheral regions of the wafers W. The developing units DEV are arranged at one side of the transporting space A₂, and the heat-treating units 42 and edge exposing unit EEW are arranged at the other side of the transporting space A₂. Preferably, the developing units DEV are arranged at the same side as the coating units 31. It is also preferable that the heat-treating units 42 and edge exposing unit EEW are arranged in the same row as the heat-treating units 41.

In one embodiment, the number of developing units DEV is four, and sets of two units DEV arranged horizontally along the transporting space A₂are stacked one over the other. Each developing unit DEV includes a spin holder 77 for holding and spinning a wafer W, and a cup 79 surrounding the wafer W. The two developing units DEV arranged at the lower level are not separated from each other by a partition wall or the like. A supply device 81 is provided for supplying developers to the two developing units DEV. The supply device 81 includes two slit nozzles 81a having a slit or a row of small bores for delivering the developers. The slit or row of small bores, preferably, has a length corresponding to the diameter of wafer W. Preferably, the two slit nozzles 81a are arranged to deliver developers of different types or concentrations. The supply device 81 further includes a moving mechanism 81b for moving each slit nozzle 81a. Thus, the slit nozzles 81a are movable, respectively, over the two spin holders 77 juxtaposed sideways.

The plurality of heat-treating units 42 are arranged sideways along the transporting space A₂, and stacked one over the other. Each heat-treating unit 42 includes a heating unit HP for heating wafers W and a cooling unit CP for cooling wafers W.

The single edge exposing unit EEW is disposed in a predetermined position. The edge exposing unit EEW includes a spin holder (not shown) for holding and spinning a wafer W, and a light emitter (not shown) for exposing edges of the wafer W held by the spin holder.

The receiver PASS₅and heating and cooling units PHP are stacked in a position facing the transporting space A₂and adjacent the IF section 5. The stack of receiver PASS₅and heating and cooling units PHP has one side thereof located adjacent one of the heat-treating units 42, and is aligned with the heat-treating units 42. As distinct from the heat-treating units 42 of the second cell 12, the heating and cooling units PHP rely on the IF's transport mechanism TIF for transport of wafers W. In terms of layout, the heating and cooling units PHP are mounted in the same housing 75 as the second and fourth cells 12 and 14. These heating and cooling units PHP and receiver PASS₅are constructed for allowing wafers W to be loaded and unloaded through the front thereof opposed to the transporting space A₂and the side opposed to the IF section 5.

The main transport mechanism T₂is disposed substantially centrally of the transporting space A₂in plan view. The main transport mechanism T₂has the same construction as the main transport mechanism T₁. The main transport mechanism T2 transports wafers W to and from the receiver PASS₂, various heat-treating units 42, edge exposing unit EEW and receiver PASS₅.

[Fourth Cell 14]

Like reference numerals are used to identify like parts which are the same as in the first and second cells 11 and 12, and will not be described again. The layout in plan view of the main transport mechanism T₄and treating units in the fourth cell 14 is substantially the same as that of the second cell 12. The arrangement of the various treating units of the fourth cell 14 as seen from the main transport mechanism T₄is substantially the same as the arrangement of the various treating units of the second cell 12 as seen from the main transport mechanism T₂. Thus, the developing units DEV of the second cell 12 and fourth cell 14 are stacked vertically. Similarly, the heat-treating units 42 of the second cell 12 and fourth cell 14 are stacked vertically.

[Second Cell 12 and Fourth Cell 14]

Constructions relevant to the second cell 12 and fourth cell 14 also are substantially the same as the constructions relevant to the first cell 11 and third cell 13, and will be described briefly. Each of the transporting spaces A₂and A₄of the second and fourth cells 12 and 14 also has constructions corresponding to the first blowout unit 61 and exhaust unit 62. Each developing unit DEV of the second and fourth cells 12 and 14 also has constructions corresponding to the second blowout unit 67 and second gas exhaust pipe 66.

In the following description, when distinguishing the developing units DEV, edge exposing units EEW, and so on in the second and fourth cells 12 and 14, subscripts “2” and “4” will be affixed (for example, the heating units HP in the second cell 12 will be referred to as “heating units HP2”).

[IF Section 5, etc.]

Reference is now made to FIG. 1 and FIG. 7. The first transport mechanism TIFA and second transport mechanism TIFB are arranged in a direction perpendicular to the arrangement of cells 11 and 12 (13 and 14). The first transport mechanism T_IFAis disposed at the side where the heat-treating units 42 and so on of the second and fourth cells 12 and 14 are located. The second transport mechanism T_IFBis disposed at the side where the developing units DEV of the second fourth cells 12 and 14 are located. Stacked in multiples stages between the first and second transport mechanisms T_IFAand T_IFBare a receiver PASS-CP for receiving and cooling wafers W, a receiver PASS₇for receiving wafers W, and buffers BF for temporarily storing wafers W.

The first transport mechanism T_IFAincludes a fixed base 83, lift shafts 85 vertically extendible and contractible relative to the base 83, and a holding arm 87 swivelable on the lift shafts 85, and extendible and retractable radially of the swivel motion, for holding a wafer W. The first transport mechanism TIFA transports wafers W between the heating and cooling units (PHP₂, PHP₄), receivers (PASS₅, PASS_E, PASS-CP) and buffers BF. The second transport mechanism T_IFBalso has a base 83, lift shafts 85 and a holding arm 87 for transporting wafers W between the receivers (PASS-CP, PASS₇) and exposing machine EXP.

A control system of this apparatus will be described next. FIG. 10 is a control block diagram of the substrate treating apparatus according to the embodiment. As shown, this apparatus includes a main controller 91 and a first to a sixth controllers 93, 94, 95, 96, 97 and 98.

The first controller 93 controls substrate transport by the ID's transport mechanism T_ID. The second controller 94 controls substrate transport by the main transport mechanism T₁, and substrate treatment in the resist film coating units RESIST₁, antireflection film coating units BARC₁, cooling units CP₁, heating and cooling units PHP₁and adhesion units AHL₁. The third controller 95 controls substrate transport by the main transport mechanism T₂, and substrate treatment in the edge exposing unit EEW₂, developing units DEV₂, heating units HP₂and cooling units CP₂. The controls by the fourth and fifth controllers 96 and 97 correspond to those by the second and third controllers 94 and 95, respectively. The sixth controller 98 controls substrate transport by the first and second transport mechanisms T_IFAand T_IFB, and substrate treatment in the heating and cooling units PHP₂and PHP₄. The first to sixth controllers 93-98 carry out the controls independently of one another.

The main controller 91 performs overall control of the first to sixth controllers 93-98. Specifically, the main controller 91 controls coordination among the transport mechanisms. For example, the main controller 91 adjusts the timing of the respective transport mechanisms making access to the receivers PASS₁-PASS_E. The main controller 91 also controls wafers W to be transported to the exposing machine EXP in the order in which the wafers W are fetched from the cassettes C.

Each of the main controller 91 and the first to sixth controllers 93-98 is realized by a central processing unit (CPU) which performs various processes, a RAM (Random Access Memory) used as the workspace for operation processes, and a storage medium such as a fixed disk for storing a variety of information including a predetermined processing recipe (processing program). The main controller 91 and the first to sixth controllers 93-98 correspond to the controller in this embodiment.

Next, operation of the substrate treating apparatus in this embodiment will be described. FIG. 11 is a flow chart of a series of treatments of wafers W, indicating the treating units and receivers to which the wafers W are transported in order. FIG. 12 is a view schematically showing operations repeated by each transport mechanism, and specifying an order of treating units, receivers and cassettes accessed by the transport mechanisms. The following description will be made separately for each transport mechanism.

[ID's Transport Mechanism T_ID]

The ID's transport mechanism T_IDmoves to a position opposed to one of the cassettes C, holds with the holding arm 25 a wafer W to be treated and takes the wafer W out of the cassette C. The ID's transport mechanism T_IDswivels the holding arm 25, vertically moves the lift shaft 23, moves to a position opposed to the receiver PASS₁, and places the wafer W on the receiver PASS_1A(which corresponds to step S1a in FIG. 11; only step numbers will be indicated hereinafter). At this time, a wafer W usually is present on the receiver PASS_1B, and the ID's transport mechanism T_IDreceives this wafer W and stores it in a cassette C (step S23). When there is no wafer W on the receiver PASS_1B, the ID's transport mechanism T_IDjust accesses the cassette C. Then, the ID's transport mechanism T_IDtransports a wafer W from the cassette C to the receiver PASS_3A(step S1b). Here again, if a wafer W is present on the receiver PASS_3B, the ID's transport mechanism T_IDwill store this wafer W in a cassette C (step S23).

The ID's transport mechanism T_IDrepeats the above operation. This operation is controlled by the first controller 93. As a result, the wafers W taken out one at a time from the cassette C are transported alternately to the first cell 11 and third cell 13.

[Main Transport Mechanisms T₁, T₃]

Since operation of the main transport mechanism T₃is substantially the same as operation of the main transport mechanism T₁, only the main transport mechanism T₁will be described. The main transport mechanism T₁moves to a position opposed to the receiver PASS₁. At this time, the main transport mechanism T₁holds, on one holding arm 57 (e.g. 57b), a wafer W received immediately before from the receiver PASS_2B. The main transport mechanism T1 places this wafer W on the receiver PASS_1B(step S22), and holds the wafer W present on the receiver PASS_1Awith the other holding arm 57 (e.g. 57a).

The main transport mechanism T₁accesses a predetermined one of the cooling units CP₁. There is a different wafer W having already received a predetermined heat treatment (cooling) in the cooling unit CP₁. The main transport mechanism T₁holds the different wafer W with the unloaded holding arm 57 (holding no wafer W), takes it out of the cooling unit CP₁, and loads into the cooling unit CP₁the wafer W having received from the receiver PASS_1A. Then, the main transport mechanism T₁, holding the cooled wafer W, moves to one of the antireflection film coating units BARC₁. The cooling unit CP₁starts heat treatment (cooling) of the wafer W loaded therein (step S2). It is assumed that, when the main transport mechanism T₁subsequently accesses the different heat-treating units 41 and coating units 31, wafers W having received predetermined treatments are present in these treating units (31 and 41).

Accessing the antireflection film coating unit BARC₁, the main transport mechanism T₁takes a wafer W having antireflection film formed thereon from the antireflection film coating unit BARC₁, and places the cooled wafer W on the spin holder 32 of the antireflection film coating unit BARC₁. Then, the main transport mechanism T₁, holding the wafer W having antireflection film formed thereon, moves to one of the heating and cooling units PHP₁. The antireflection film coating unit BARC₁starts treatment of the wafer W placed on the spin holder 32 (step S3).

Specifically, the spin holder 32 spins the wafer W in horizontal posture, the gripper 26 grips one of the nozzles 35, the nozzle moving mechanism 37 moves the gripped nozzle 35 to a position above the wafer W, and the treating solution for antireflection films is supplied from the nozzle 35 to the wafer W. The treating solution supplied spreads all over the wafer W, and is scattered away from the wafer W. The cup 33 collects the scattering treating solution. In this way, the treatment is carried out for forming antireflection film on the wafer W.

Accessing the heating and cooling unit PHP₁, the main transport mechanism T₁takes a wafer W having received heat treatment out of the heating and cooling unit PHP₁, and loads the wafer W having antireflection film formed thereon into the heating and cooling unit PHP₁. Then, the main transport mechanism T₁, holding the wafer W taken out of the heating and cooling unit PHP₁, moves to one of the cooling units CP₁. The heating and cooling unit PHP₁receives a wafer W successively on the two plates 43, to heat the wafer W on one of the plates 43 and then to cool the wafer W on the other plate 43 (step S4).

Having moved to the cooling unit CP₁, the main transport mechanism T₁takes a wafer W out of the cooling unit CP₁, and loads the wafer W held by the transport mechanism T₁into the cooling unit CP₁. The cooling unit CP₁cools the wafer W loaded therein (step S5).

Then, the main transport mechanism T₁moves to one of the resist film coating units RESIST₁. The main transport mechanism T₁takes a wafer W having resist film formed thereon from the resist film coating unit RESIST₁, and loads the wafer W held by the main transport mechanism T₁into the resist film coating unit RESIST₁. The resist film coating unit RESIST₁supplies the resist film material while spinning the wafer W loaded therein, to form resist film on the wafer W (step S6).

The main transport mechanism T₁further moves to one of the heating and cooling units PHP₁and one of the cooling units CP₁. The main transport mechanism T₁loads the wafer W having resist film formed thereon into the heating and cooling unit PHP₁, transfers a wafer W treated in the heating and cooling unit PHP₁to the cooling unit CP₁, and receives a wafer W treated in the cooling unit CP₁. The heating and cooling unit PHP₁and cooling unit CP₁carry out predetermined treatments of newly loaded wafers W, respectively (steps S7 and S8).

The main transport mechanism T₁moves to the receiver PASS₂, places the wafer W it is holding on the receiver PASS_2A(step S9), and receives a wafer W present on the receiver PASS_2B(step S21).

Subsequently, the main transport mechanism T₁accesses the receiver PASS₁again, and repeats the above operation. This operation is controlled by the second controller 94. Having received a wafer W from the receiver PASS₁, the main transport mechanism T₁transports this wafer W to a predetermined treating unit (a cooling unit CP₁in this embodiment), and takes a treated wafer W from this treating unit. Subsequently, the main transport mechanism T₁moves to a plurality of treating units in order, and transfers wafers W treated in the respective treating units to other treating units. Whenever a treated wafer W is replaced by a wafer W to be treated, each treating unit (31, 41) starts the predetermined treatment. Thus, predetermined treatments are carried out in parallel for a plurality of wafers W in the respective treating units. A series of treating steps is successively performed for a plurality of wafers W. In these circumstances, the second controller 94 controls periods of the series of treating steps to be uniform. Further, it is preferred to control the timing of transporting wafers W to each treating unit (31, 41) and a schedule of treatment carried out in each treating unit (31, 41) to be uniform between the wafers W. As a result, the series of treatments is completed in order, starting with a wafer W first placed on the receiver PASS₁. The wafers W are forwarded to the receiver PASS₂in the order in which they are placed on the receiver PASS₁. Similarly, the main transport mechanism T₁places the wafers W on the receiver PASS₁in the order of receipt from the receiver PASS₂.

[Main Transport Mechanisms T₂, T₄]

Since operation of the main transport mechanism T₄is substantially the same as operation of the main transport mechanism T₂, only the main transport mechanism T₂will be described. The main transport mechanism T₂moves to a position opposed to the receiver PASS₂. At this time, the main transport mechanism T₂holds a wafer W received from a cooling unit CP₂accessed immediately before. The main transport mechanism T₂places this wafer W on the receiver PASS_2B(step S21), and holds the wafer W present on the receiver PASS_2A(step S9).

The main transport mechanism T₂accesses the edge exposing unit EEW₂. The main transport mechanism T₂receives a wafer W having received a predetermined treatment in the edge exposing unit EEW₂, and loads the cooled wafer W into the edge exposing unit EEW₂. While spinning the wafer W loaded therein, the edge exposing unit EEW₂irradiates peripheral regions of the wafer W with light from the light emitter not shown, thereby exposing the peripheral regions of the wafer W (step S10).

The main transport mechanism T₂, holding the wafer W received from the edge exposing unit EEW₂, accesses the receiver PASS₅. The main transport mechanism T₂places the wafer W on the receiver PASS_SA(step S11), and holds a wafer W present on the receiver PASS_SB(step S16).

The main transport mechanism T₂moves to one of the cooling units CP₂, and replaces a wafer W in the cooling unit CP₂with the wafer W held by the main transport mechanism T₂. The main transport mechanism T₂holds the wafer W having received cooling treatment, and accesses one of the developing units DEV₂. The cooling unit CP₂starts treatment of the newly loaded wafer W (step S17).

The main transport mechanism T₂takes a developed wafer W from the developing unit DEV₂, and places the cooled wafer W on the spin holder 77 of the developing unit DEV₂. The developing unit DEV₂develops the wafer W placed on the spin holder 77 (step S18). Specifically, while the spin holder 77 spins the wafer W in horizontal posture, the developer is supplied from one of the slit nozzles 81a to the wafer W, thereby developing the wafer W.

The main transport mechanism T₂holds the developed wafer W, and accesses one of the heating units HP₂. The main transport mechanism T₂takes a wafer W out of the heating unit HP₂, and loads the wafer W it is holding into the heating unit HP₂. Then, the main transport mechanism T₂transports the wafer W taken out of the heating unit HP₂to one of the cooling units CP₂, and takes out a wafer W already treated in this cooling unit CP₂. The heating unit HP₂and cooling unit CP₂carry out predetermined treatments for the newly loaded wafers W, respectively (steps S19 and S20).

Subsequently, the main transport mechanism T₂accesses the receiver PASS₂again, and repeats the above operation. This operation is controlled by the third controller 95. As a result, the wafers W are forwarded to the receiver PASS_SBin the order in which they are placed on the receiver PASS_2A. Similarly, the wafers W are forwarded to the receiver PASS_SBin the order in which they are placed on the receiver PASS_SB.

[IF's Transport Mechanisms T_IF-First Transport Mechanism T_IFA]

The first transport mechanism T_IFAaccesses the receiver PASS₅, and receives the wafer W present on the receiver PASS_SA(step S11a). The first transport mechanism T_IFA, holding the wafer W received, moves to the receiver PASS-CP, and loads the wafer W on the receiver PASS-CP (step S12).

Next, the first transport mechanism T_IFAreceives a wafer W from the receiver PASS₇(step S14), and moves to a position opposed to one of the heating and cooling units PHP₂. The first transport mechanism T_IFAtakes a wafer W having received heat treatment (PEB: Post Exposure Bake) from the heating and cooling unit PHP₂, and loads the wafer W received from the receiver PASS7 into the heating and cooling unit PHP₂. The heating and cooling unit PHP₂carries out heat treatment for the newly loaded wafer W (step S15).

The first transport mechanism T_IFAtransports the wafer W taken out of the heating and cooling unit PHP₂to the receiver PASS_SB. Subsequently, the first transport mechanism T_IFAtransports a wafer W from the receiver PASS_6Ato the receiver PASS-CP (Step S11b, 12). Next, the first transport mechanism T_IFAtransports a wafer W from the receiver PASS₇to one of the heating and cooling units PHP₄. At this time, the first transport mechanism T_IFAtakes out a wafer W having been treated in the heating and cooling unit PHP₄, and places the wafer W on the receiver PASS_SB.

Subsequently, the first transport mechanism T_IFAaccesses the receiver PASS₅again and repeats the above operation. This operation is controlled by the sixth controller 98. By transporting wafers W alternately from the receivers PASS₅and PASS_Eto the receiver PASS-CP, the wafers W are placed on the receiver PASS-CP in the order in which the ID's transport mechanism TID has taken them out of the cassette C.

However, the controls of transport to and from the treating units by the main transport mechanisms T and treatment in the treating units are carried out independently for each of the cells 11-14. That is, no adjustment is made to the timing of feeding wafers W to each of the receiver PASS₅and receiver PASS₆. Therefore, the order of feeding wafers W to the receiver PASS₅and receiver PASS₆may not agree with the order in which they are taken out of the cassette C due to a fault such as a delay in substrate treatment or transportation. In such a case, the sixth controller 98 operates the first transport mechanism T_IFAas follows.

When wafers W fail to be fed to either one of the receiver PASS_SAand receiver PASS_6A, and wafers W are placed on the other receiver, the wafers W placed on the other receiver is transported to the buffers BF instead of the receiver PASS-CP. When wafers W begin to be placed again on the receiver for which the feeding has been disrupted, the wafers W are transported from the receiver now restored to service to the receiver PASS-CP, and also from the buffers BF to the receiver PASS-CP. At this time, the wafers W are transported alternately from the restored receiver and buffers BF to the receiver PASS-CP. As a result, even when the order of feeding wafers W to the receiver PASS₅and receiver PASS₆disagrees with the order in which they are taken out of the cassette C, the order of wafers W transported to the receiver PASS-CP is in agreement with the order of wafers W taken out of the cassette C.

[IF's Transport Mechanisms T_IF-Second Transport Mechanism T_IFB]

The second transport mechanism T_IFBtakes a wafer W out of the receiver PASS-CP, and transports it to the exposing machine EXP. Then, the second transport mechanism T_IFBreceives an exposed wafer W from the exposing machine EXP, and transports it to the receiver PASS₇.

Subsequently, the second transport mechanism T_IFBaccesses the receiver PASS-CP again and repeats the above operation. This operation also is controlled by the sixth controller 98. As described above, the first and second transport mechanisms T_IFAand T_IFBcooperate to feed wafers W to the exposing machine EXP in the order in which they are taken out of the cassette C.

The substrate treating apparatus according to this embodiment has two substrate treatment lines Lu and Ld arranged one over the other. This construction can substantially double the processing capabilities in the treatment for forming antireflection film and resist film and in the treatment for developing wafers W. Therefore, the throughput of the substrate treating apparatus is improved drastically.

Each of the substrate treatment lines Lu and Ld includes the main transport mechanisms T arranged in one row. This arrangement can inhibit an increase in the installation area of the treating section 3.

The arrangements of the main transport mechanisms T₁and T₃(T₂and T₄) and treating units in the two, upper and lower, substrate treatment lines Lu (Ld) are substantially the same in plan view, which can simplify the construction of the apparatus.

The construction of the apparatus may be simplified by providing the same type of treating units for the two, upper and lower, substrate treatment lines Lu and Ld to perform the same series of treatments.

The treating units of the upper and lower cells 11 and 13 (12, 14) are stacked together. This arrangement can simplify the construction of treating blocks Ba and Bb each including two, upper and lower cells.

Each of the treating blocks Ba and Bb has a housing 75 which collectively supports the two, upper and lower, main transport mechanisms T and the plurality of treating units. This allows the substrate treating apparatus to be manufactured efficiently and to be maintained and repaired easily.

Each of the transporting spaces A₁-A₄has the first blowout openings 61a and discharge openings 62a, which can keep each transporting space A clean.

The first blowout openings 61a are arranged over each transporting space A, and the discharge openings 62a under each transporting space A, to produce substantially vertical, downward gas currents in the transporting space A. This prevents the temperature environment of transporting spaces A, coating units 31 and developing units DEV from being influenced by the heat from the heat-treating units 41.

The exhaust unit 62 provided in the transporting space A₁(A₂) and the first blowout unit 61 provided in the transporting space A₃(A₄) block off the atmospheres of each of the transporting spaces A₁and A₃(A₂and A₄). Thus, each transporting space A can be maintained clean. The apparatus construction is simplified since no special or additional component is required for blocking off atmosphere.

The first gas supply pipe 61 is provided as a component common to the first blowout units 61 of the upper and lower transporting spaces A₁and A₃. This reduces piping installation space and simplifies the apparatus construction.

The receivers PASS₁and PASS₃are provided for transferring wafers W between the ID's transport mechanism T_IDand main transport mechanisms T₁and T₃, which can prevent lowering of the transporting efficiency of the ID's transport mechanism T_IDand main transport mechanisms T₁and T₃. Similarly, the transporting efficiency of each transport mechanism is prevented from lowering by transferring wafers W between the transport mechanisms through the receivers PASS.

Since the receiver PASS₁and receiver PASS₃are locate close to each other, the ID's transport mechanism T_IDcan access the receiver PASS₁and receiver PASS₃through a reduced amount of vertical movement.

The main controller 91 and the first to sixth controllers 93-98 are provided to control movement of wafers W to bring into agreement the order of fetching from a cassette C and the order of feeding to the exposing machine EXP. This enables supervision or follow-up check of each wafer W without providing a construction for identifying the wafers W.

The common, second gas supply pipe 65 is provided for the coating units 31 (developing units DEV) in the upper and lower cells 11 and 13 (12 and 14). This reduces piping installation space and simplifies the apparatus construction.

This invention is not limited to the foregoing embodiment, but may be modified as follows:

(1) The foregoing embodiment provides two substrate treatment lines Lu and Ld, but the invention not limited to this. The construction may be modified to include three or more substrate treatment lines vertically arranged in multiple stages.

(2) In the foregoing embodiment, each substrate treatment line Lu (Ld) has two cells 11 and 12 (13 and 14) connected to each other. The invention is not limited to this. Each substrate treatment line may have three or more cells.

(3) In the foregoing embodiment, the substrate treatment lines Lu and Ld carry out the treatment for forming resist film and antireflection film on the wafers W, and the treatment for developing exposed wafers W. The substrate treatment lines may be modified to perform other treatment such as cleaning of the wafers W. Accordingly, the type, number and the like of treating units are selected or designed as appropriate. Further, the substrate treating apparatus may be constructed to exclude the IF section 5.

(4) In the foregoing embodiment, the two substrate treatment lines Lu and Ld perform the same series of treatments. Instead, the substrate treatment lines Lu and Ld may be modified to perform different treatments.

(5) In the foregoing embodiment, the two substrate treatment lines Lu and LD have substantially the same plane layout. Instead, each of the substrate treatment lines Lu and Ld (i.e. upper and lower cells) may have the main transport mechanisms T and treating units arranged differently.

(6) In the foregoing embodiment, the upper and lower cells 11 and 13 (12 and 14) have the same arrangement of treating units as seen from the main transport mechanisms T. Instead, the upper and lower cells may have different arrangements of treating cells.

(7) In the foregoing embodiment, each of the cells 11-14 has the treating units arranged at opposite sides of the transporting space A. Instead, the treating units may be arranged at only one side.

(8) In the foregoing embodiment, wafers W are transferred between the transport mechanisms through the receivers PASS. Instead, the wafers W may be transferred directly between the transport mechanisms, for example.

(9) The foregoing embodiment may be modified to include buffers BF and cooling units CP arranged over and/or under the receivers PASS₁, PASS₂, PASS₃and PASS₄. This construction allows the wafers W to be stored temporarily or cooled as appropriate.

(10) In the foregoing embodiment, the IF transport mechanisms TIF include two transport mechanisms TIFA and TIFB. The IF section may be modified to include one transport mechanism or three or more transport mechanisms.

(11) The foregoing embodiment provides no partition or the like between the antireflection film coating unit BARC and resist film coating unit RESIST, but allows the atmosphere to be shared between these coating units. Instead, the atmospheres of the two units may be blocked off as appropriate.

(12) In the foregoing embodiment, one first blowout unit 61 and one exhaust unit 62 are constructed to block off the atmosphere of each of the transporting spaces A₁and A₃(A₂and A₄). The invention is not limited to this. For example, only one of the first blowout unit 61 and exhaust unit 62 may block off atmosphere. Alternatively, a shielding plate may be provided separately from the first blowout unit 61 and exhaust unit 62 for blocking off the atmosphere of each of the upper and lower transporting spaces A.

(13) In the foregoing embodiment, the first blowout unit 61 is disposed over each transporting space A, and the exhaust unit 62 disposed under each transporting space. Instead, the first blowout unit 61 or exhaust unit 62 may be disposed laterally of each transporting space A. The first blowout unit 61 and exhaust unit 62 may be shared by the transporting spaces A₁and A₂(A₃and A₄) of the same substrate treatment line Lu (Ld).

This invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof and, accordingly, reference should be made to the appended claims, rather than to the foregoing specification, as indicating the scope of the invention.

Claims

1. A substrate treating apparatus comprising: a treating block including a plurality of cells arranged vertically, each cell comprising: treating units including solution treating units configured to treat substrates with treating solutions; anda single main transport disposed in a transporting space and configured to transport the substrates to the treating units;a gas supply pipe configured to supply a gas into the solution treating units of each cell;a gas exhaust pipe configured to exhaust gas from the solution treating units of each cell; anda pit portion formed laterally with respect to the solution treating units of each cell,wherein: the gas supply pipe extends vertically and is branched at each cell;a plurality of branches of the gas supply pipe is connected to respective blowout units configured to blow out the gas downward;the gas exhaust pipe extends vertically and is branched at each cell;a plurality of branches of the gas exhaust pipe extends horizontally and is connected to bottoms of cups of the respective solution treating units;the gas supply pipe and the gas exhaust pipe are connected to the same solution treating units and are arranged on a same side of the solution treating units;the pit portion in a vertical direction is longer than the pit portion in a horizontal direction;the pit portion extends from an upper position of an upper one of the plurality of cells to a lower position of a lower one of the plurality of cells;the pit portion accommodates the gas supply pipe; andthe gas supply pipe extends horizontally at each cell from the pit portion.
2. The apparatus of claim 1, wherein the pit portion accommodates at least one of a pipe for the treating solutions or a pipe for electric wiring.
3. A substrate treating apparatus comprising: a treating block including a plurality of cells arranged vertically within the treating bloc each cell comprising: treating units configured to treat substrates, the treating units including:solution treating units configured to treat the substrates with solutions; andheat-treating units configured to heat-treat the substrates; anda single main transport disposed in a transporting space on each cell of the treating block and configured to transport the substrates to the treating units, each transporting space extending horizontally through a center of each cell; each transporting space having a first side and a second side on opposite horizontal sides of each transportation space;wherein the solution treating units are arranged at the first side of each transporting space;wherein the heat-treating units are arranged at the second side of each transporting space;wherein the substrate treating apparatus further comprises: an upper exhaust unit disposed at a lower position of a transporting space of an upper one of the plurality of cells and configured to exhaust a gas from the transporting space of the upper one of the plurality of cells;a lower exhaust unit disposed at a lower position of a transporting space of a lower one of the plurality of cells and configured to exhaust the gas from the transporting space of the lower one of the plurality of cells; anda first gas exhaust pipe extending from the lower position of the transporting space of the upper one of the plurality of cells to the lower position of the transporting space of the lower one of the plurality of cells and connected to the upper exhaust unit and the lower exhaust unit; andwherein: the first gas exhaust pipe is located only at the second side of each transporting space;the first gas exhaust pipe is in communication with the transporting space of the upper one of the plurality of cells only through the upper exhaust unit; andthe first gas exhaust pipe is in communication with the transporting space of the lower one of the plurality of cells only through the lower exhaust unit.
4. The apparatus of claim 1, wherein: the transporting space and the cups are arranged in a first direction in a plan view; andthe gas exhaust pipe and the cups are arranged in a second direction in the plan view, the second direction different from the first direction.
5. The apparatus of claim 1, wherein the pit portion is within the solution treating units.
6. A substrate treating apparatus comprising: a treating block including a plurality of cells arranged vertically within the treating block; each cell comprising:treating units configured to treat substrates, the treating units including:solution treating units configured to treat the substrates with solutions; andheat-treating units configured to heat-treat the substrates; anda single main transport disposed in a transporting space on each cell of the treating block and configured to transport the substrates to the treating units, each transporting space extends in a horizontal direction through the center of each cell; each transporting space having a first side and a second side on opposite horizontal sides of the transportation space; wherein the solution treating units are arranged at a first horizontal side of each transporting space; andwherein the heat-treating units are arranged at a second horizontal side of each transporting space;wherein the substrate treating apparatus further comprises: an upper blowout unit disposed at an upper position of a transporting space of an upper one of the plurality of cells and configured to supply a gas into a transporting space of the upper one of the plurality of cells;a lower blowout unit disposed at an upper position of the transporting space of a lower one of the plurality of cells and configured to supply the gas into the transporting space of the lower one of the plurality of cells; anda first gas supply pipe extending from the upper position of the transporting space of the upper one of the plurality of cells to the lower position of the transporting space of the lower one of the plurality of cells and connected to the upper blowout unit and the lower blowout unit; andwherein: the first gas supply pipe is located only at the first horizontal side of each transporting space;the first gas supply pipe is in communication with the transporting space of the upper one of the plurality of cells only through the upper blowout unit; andthe first gas supply pipe is in communication with the transporting space of the lower one of the plurality of cells only through the lower blowout unit.
7. The apparatus of claim 6, further comprising a second gas supply pipe for supplying the gas into the solution treating units.
8. The apparatus of claim 7, wherein one end of the second gas supply pipe is connected to the first gas supply pipe below a lower one of the plurality of cells.
9. The apparatus of claim 8, wherein the one end of the second gas supply pipe is connected to the first gas supply pipe below the solution treating units of the lower one of the plurality of cells.
10. The apparatus of claim 3, wherein: the gas in the transporting space of the upper one of the plurality of cells is exhausted solely by the upper exhaust unit;the gas in the transporting space of the lower one of the plurality of cells is exhausted solely by the lower exhaust unit;the gas exhausted by the upper exhaust unit and the lower exhaust unit flows only into the first gas exhaust pipe; andthe gas in the first gas exhaust pipe flows through the second side of the transporting space.
11. The apparatus of claim 6, wherein: the gas is supplied to the transporting space of the upper one of the plurality of cells solely by the upper blowout unit;the gas is supplied to the transporting space of the lower one of the plurality of cells solely by the lower blowout unit;the gas is supplied to the upper blowout unit and the lower blowout unit solely by the first gas supply pipe; andthe gas in the first gas supply pipe flows through the first side of the transporting space.
12. The apparatus of claim 6, wherein the gas flows upward in the first gas supply pipe.

Priority Claims (1)

Number	Date	Country	Kind
2007-172496	Jun 2007	JP	national

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 13/401,617, filed Feb. 21, 2012, which is a continuation of U.S. patent application Ser. No. 12/163,951, now U.S. Pat. No. 8,851,008, which claims priority to Japanese Patent Application No. 2007-172496, filed Jun. 29, 2007. The disclosures of each of these applications are hereby incorporated by reference in their entirety for all purposes.

US Referenced Citations (292)

Number	Name	Date	Kind
4409889	Burleson	Oct 1983	A
4985722	Ushijima et al.	Jan 1991	A
5028195	Ishii et al.	Jul 1991	A
5100516	Nishimura et al.	Mar 1992	A
5102283	Balzola Elorza	Apr 1992	A
5177514	Ushijima et al.	Jan 1993	A
5202716	Tateyama et al.	Apr 1993	A
5275709	Anderle et al.	Jan 1994	A
5297910	Yoshioka et al.	Mar 1994	A
5430271	Orgami et al.	Jul 1995	A
5518542	Matsukawa et al.	May 1996	A
5536128	Shimoyashiro et al.	Jul 1996	A
5565034	Nanbu et al.	Oct 1996	A
5571325	Ueyama	Nov 1996	A
5651823	Parodi et al.	Jul 1997	A
5664254	Ohkura et al.	Sep 1997	A
5668056	Wu et al.	Sep 1997	A
5668733	Morimoto et al.	Sep 1997	A
5672205	Fujitmoto et al.	Sep 1997	A
5677758	McEachern et al.	Oct 1997	A
5725664	Nanbu et al.	Mar 1998	A
5788477	Yonemitsu et al.	Aug 1998	A
5788868	Itaba et al.	Aug 1998	A
5803932	Akimoto et al.	Sep 1998	A
5820679	Yokoyama et al.	Oct 1998	A
5826129	Hasebe et al.	Oct 1998	A
5842917	Soung et al.	Dec 1998	A
5844662	Akimoto et al.	Dec 1998	A
5858863	Yokoyama et al.	Jan 1999	A
5876280	Kitano	Mar 1999	A
5928390	Yaegashi	Jul 1999	A
5937223	Akimoto	Aug 1999	A
5962070	Mitsuhashi et al.	Oct 1999	A
5963753	Ohtani et al.	Oct 1999	A
5972110	Akimoto	Oct 1999	A
5976199	Wu et al.	Nov 1999	A
6007629	Ohtani et al.	Dec 1999	A
6010570	Motoda et al.	Jan 2000	A
6027262	Akimoto	Feb 2000	A
6062798	Muka	May 2000	A
6063439	Semba et al.	May 2000	A
6069096	Nishihata et al.	May 2000	A
6099598	Yokoyama et al.	Aug 2000	A
6099643	Ohtani et al.	Aug 2000	A
6116841	Iwasaki	Sep 2000	A
6146083	Iwasaki	Nov 2000	A
6151981	Costa	Nov 2000	A
6161969	Kimura et al.	Dec 2000	A
6176667	Fairbairn	Jan 2001	B1
6210481	Sakai et al.	Apr 2001	B1
6227786	Tateyama	May 2001	B1
6235634	White et al.	May 2001	B1
6264748	Kuriki et al.	Jul 2001	B1
6266125	Fukuda et al.	Jul 2001	B1
6270306	Otwell et al.	Aug 2001	B1
6287023	Yaegashi et al.	Sep 2001	B1
6287025	Matsuyama	Sep 2001	B1
6290405	Ueda	Sep 2001	B1
6292708	Allen et al.	Sep 2001	B1
6333003	Katano	Dec 2001	B1
6338582	Ueda	Jan 2002	B1
6377329	Takekuma	Apr 2002	B1
6382849	Sakamoto et al.	May 2002	B1
6382895	Konishi et al.	May 2002	B1
6402401	Ueda et al.	Jun 2002	B1
6426303	Ueda	Jul 2002	B1
6432842	Akimoto et al.	Aug 2002	B2
6444029	Kimura et al.	Sep 2002	B1
6454472	Kim	Sep 2002	B1
6461438	Ookura et al.	Oct 2002	B1
6464789	Akimoto	Oct 2002	B1
6466300	Deguchi	Oct 2002	B1
6485203	Katano et al.	Nov 2002	B2
6491451	Stanley et al.	Dec 2002	B1
6511315	Hashimoto	Jan 2003	B2
6537835	Adachi et al.	Mar 2003	B2
6558053	Shigemori et al.	May 2003	B2
6590634	Nishi et al.	Jul 2003	B1
6645880	Shigemori et al.	Nov 2003	B1
6654668	Harada	Nov 2003	B1
6680775	Hirikawa	Jan 2004	B1
6698944	Fujita	Mar 2004	B2
6750155	Halsey et al.	Jun 2004	B2
6752543	Fukutomi	Jun 2004	B2
6752872	Inada et al.	Jun 2004	B2
6758647	Kaji et al.	Jul 2004	B2
6807455	Yoshida et al.	Oct 2004	B2
6832863	Sugimoto et al.	Dec 2004	B2
6879866	Tel et al.	Apr 2005	B2
6889014	Takano	May 2005	B2
6893171	Fukutomi et al.	May 2005	B2
6910497	Bernad	Jun 2005	B2
6919001	Fairbairn et al.	Jul 2005	B2
6937917	Akiyama et al.	Aug 2005	B2
6955595	Kim	Oct 2005	B2
6982102	Inada et al.	Jan 2006	B2
7001674	Irie	Feb 2006	B2
7008124	Miyata	Mar 2006	B2
7017658	Hisai et al.	Mar 2006	B2
7053990	Galburt et al.	May 2006	B2
7069099	Hashinoki et al.	Jun 2006	B2
7072730	Kobayashi et al.	Jul 2006	B2
7241061	Akimoto et al.	Jul 2007	B2
7245348	Akimoto et al.	Jul 2007	B2
7262829	Hayashida et al.	Aug 2007	B2
7279067	Yoshida et al.	Oct 2007	B2
7281869	Akimoto et al.	Oct 2007	B2
7317961	Hashinoki et al.	Jan 2008	B2
7322756	Akimoto et al.	Jan 2008	B2
7323060	Yamada et al.	Jan 2008	B2
7335090	Takahashi	Feb 2008	B2
7497633	Kaneyama	Mar 2009	B2
7522823	Fukimoto et al.	Apr 2009	B2
7525650	Shiga et al.	Apr 2009	B2
7537401	Kim et al.	May 2009	B2
7549811	Yamada et al.	Jun 2009	B2
7563042	Nakaharada et al.	Jul 2009	B2
7604424	Shigemori et al.	Oct 2009	B2
7641405	Fukutomi	Jan 2010	B2
7641406	Nishimura et al.	Jan 2010	B2
7645081	Hara et al.	Jan 2010	B2
7652276	Hayakawa et al.	Jan 2010	B2
7661894	Matsuoka et al.	Feb 2010	B2
7675048	Binns et al.	Mar 2010	B2
7686559	Tsujimoto et al.	Mar 2010	B2
7692764	Shirata	Apr 2010	B2
7699021	Volfovski et al.	Apr 2010	B2
7651306	Rice et al.	Jun 2010	B2
7729798	Hayashida et al.	Jun 2010	B2
7758341	Dong-Hun	Jul 2010	B2
7801633	Yamamoto et al.	Sep 2010	B2
7809460	Ishida et al.	Oct 2010	B2
7819079	Englhardt et al.	Oct 2010	B2
7836845	Tanoue	Nov 2010	B2
7841072	Matsuoka et al.	Nov 2010	B2
7871211	Matsuoka et al.	Jan 2011	B2
7905668	Yamamoto	Mar 2011	B2
7925377	Ishikawa et al.	Apr 2011	B2
7934880	Hara et al.	May 2011	B2
8025023	Hayashida et al.	Sep 2011	B2
8034190	Yasuda et al.	Oct 2011	B2
8113141	Oh	Feb 2012	B2
8113142	Oh	Feb 2012	B2
8154106	Ishida et al.	Apr 2012	B2
8220354	Todorov	Jul 2012	B2
8268384	Matshuoka et al.	Sep 2012	B2
8289496	Kim et al.	Oct 2012	B2
8342761	Matsuoka	Jan 2013	B2
8353986	Sasaski et al.	Jan 2013	B2
8419341	Hoey et al.	Apr 2013	B2
8443513	Ishida et al.	May 2013	B2
8480319	Hayashi et al.	Jul 2013	B2
8545118	Ogura et al.	Oct 2013	B2
8560108	Matsuyana et al.	Oct 2013	B2
8588950	Nomura	Nov 2013	B2
8612807	Collins, Jr.	Dec 2013	B2
8631809	Hamada et al.	Jan 2014	B2
8708587	Ogura et al.	Apr 2014	B2
8731701	Tsukinoki et al.	May 2014	B2
8851008	Fukutomi et al.	Oct 2014	B2
9165807	Fukutomi et al.	Oct 2015	B2
9174235	Fukutomi et al.	Nov 2015	B2
9184071	Ogura et al.	Nov 2015	B2
9230834	Fukutomi et al.	Jan 2016	B2
20010013161	Kitano	Aug 2001	A1
20010013515	Harada et al.	Aug 2001	A1
20010031147	Takamori et al.	Oct 2001	A1
20020011207	Uzawa et al.	Jan 2002	A1
20020048509	Sakata et al.	Apr 2002	A1
20020053319	Nagamine	May 2002	A1
20020176936	Matsuyama	Nov 2002	A1
20030060917	Bun et al.	Mar 2003	A1
20030079957	Otaguro et al.	May 2003	A1
20030098966	Korenaga et al.	May 2003	A1
20030131458	Wang et al.	Jul 2003	A1
20030147643	Miyata et al.	Aug 2003	A1
20030213431	Fukutomi et al.	Nov 2003	A1
20030216053	Miyata	Nov 2003	A1
20030217695	Fukutomi	Nov 2003	A1
20040005149	Sugimoto et al.	Jan 2004	A1
20040007176	Janakiraman et al.	Jan 2004	A1
20040050321	Kitano et al.	Mar 2004	A1
20040061065	Hashimoto et al.	Apr 2004	A1
20040107020	Yokoyama et al.	Jun 2004	A1
20040122545	Akiyama et al.	Jun 2004	A1
20040182318	Hashinoki et al.	Sep 2004	A1
20040229441	Sugimoto et al.	Nov 2004	A1
20050030511	Auer-Jongepier et al.	Feb 2005	A1
20050042555	Matsushita et al.	Feb 2005	A1
20050058775	Oku et al.	Mar 2005	A1
20050061441	Hashinoki et al.	Mar 2005	A1
20050069400	Dickey et al.	Mar 2005	A1
20050135905	Moriya et al.	Jun 2005	A1
20050266323	Raulea	Dec 2005	A1
20060011296	Higashi et al.	Jan 2006	A1
20060024446	Sugimoto et al.	Feb 2006	A1
20060028630	Akimoto	Feb 2006	A1
20060062282	Wright	Mar 2006	A1
20060090849	Toyoda et al.	May 2006	A1
20060098978	Yasuda et al.	May 2006	A1
20060104635	Kaneyama et al.	May 2006	A1
20060134330	Ishikawa et al.	Jun 2006	A1
20060137726	Sano et al.	Jun 2006	A1
20060147202	Yasuda et al.	Jul 2006	A1
20060149403	Shimizu et al.	Jul 2006	A1
20060162858	Akimoto et al.	Jul 2006	A1
20060164613	Akimoto et al.	Jul 2006	A1
20060194445	Hayashi et al.	Aug 2006	A1
20060201423	Akimoto et al.	Sep 2006	A1
20060201615	Matsuoka et al.	Sep 2006	A1
20060219171	Sasaki et al.	Oct 2006	A1
20060286300	Ishikawa et al.	Dec 2006	A1
20070048979	Fukuoka et al.	Mar 2007	A1
20070056514	Akimoto et al.	Mar 2007	A1
20070058147	Hamada	Mar 2007	A1
20070088450	Shinozuka et al.	Apr 2007	A1
20070119479	Yoshihara et al.	May 2007	A1
20070128529	Kazaana	Jun 2007	A1
20070172234	Shigemori et al.	Jul 2007	A1
20070179658	Hamada	Aug 2007	A1
20070190437	Kaneyama et al.	Aug 2007	A1
20070219660	Kaneko et al.	Sep 2007	A1
20070274711	Kaneyama et al.	Nov 2007	A1
20070280680	Kim et al.	Dec 2007	A1
20070297794	Park et al.	Dec 2007	A1
20080014333	Matsuoka et al.	Jan 2008	A1
20080026153	Hayashida et al.	Jan 2008	A1
20080037013	Yamamoto et al.	Feb 2008	A1
20080070164	Hayashida et al.	Mar 2008	A1
20080129968	Hayashida et al.	Jun 2008	A1
20080158531	Kiuchi	Jul 2008	A1
20080212049	Fukutomi et al.	Sep 2008	A1
20080224817	Vellore et al.	Sep 2008	A1
20080269937	Yamamoto	Oct 2008	A1
20080304940	Auer-Jongepier et al.	Dec 2008	A1
20090000543	Fukutomi et al.	Jan 2009	A1
20090001071	Kulkarni	Jan 2009	A1
20090014126	Ohtani et al.	Jan 2009	A1
20090018686	Yamamoto et al.	Jan 2009	A1
20090044747	Nishimura	Feb 2009	A1
20090060480	Herchen	Mar 2009	A1
20090070946	Tamada et al.	Mar 2009	A1
20090098298	Miyata et al.	Apr 2009	A1
20090130614	Ookouchi et al.	May 2009	A1
20090139450	Ogura et al.	Jun 2009	A1
20090139833	Ogura	Jun 2009	A1
20090142162	Ogura et al.	Jun 2009	A1
20090142713	Yamamoto	Jun 2009	A1
20090143903	Blust et al.	Jun 2009	A1
20090149982	Higashi et al.	Jun 2009	A1
20090165711	Ogura et al.	Jul 2009	A1
20090165712	Ogura et al.	Jul 2009	A1
20090165950	Kim et al.	Jul 2009	A1
20090247053	Lee	Oct 2009	A1
20090291558	Kim et al.	Nov 2009	A1
20100050940	Sahoda et al.	Mar 2010	A1
20100061718	Hara et al.	Mar 2010	A1
20100126527	Hamada	May 2010	A1
20100136257	Yasuda et al.	Jun 2010	A1
20100183807	Kim	Jul 2010	A1
20100191362	Tsukinoki	Jul 2010	A1
20100192844	Kim et al.	Aug 2010	A1
20100195066	Kim et al.	Aug 2010	A1
20110043773	Matsuoka	Feb 2011	A1
20110063588	Kashiyama et al.	Mar 2011	A1
20110078898	Ishida et al.	Apr 2011	A1
20110082579	Yoshida et al.	Apr 2011	A1
20110208344	Matsuyama et al.	Aug 2011	A1
20110211825	Matsuoka et al.	Sep 2011	A1
20110242508	Kobayashi	Oct 2011	A1
20110276166	Atanasoff	Nov 2011	A1
20110297085	Matsuyama et al.	Dec 2011	A1
20120013730	Koga	Jan 2012	A1
20120013859	Matsuoka et al.	Jan 2012	A1
20120015307	Matsuoka et al.	Jan 2012	A1
20120029687	Hagen et al.	Feb 2012	A1
20120073461	Terada et al.	Mar 2012	A1
20120084059	Akada	Apr 2012	A1
20120086142	Terada et al.	Apr 2012	A1
20120097336	Terada et al.	Apr 2012	A1
20120135148	Deguchi et al.	May 2012	A1
20120145073	Fukutomi et al.	Jun 2012	A1
20120145074	Fukutomi et al.	Jun 2012	A1
20120156380	Fukutomi et al.	Jun 2012	A1
20120271444	Matsumoto	Oct 2012	A1
20120307217	Kim et al.	Dec 2012	A1
20140000514	Ogura et al.	Jan 2014	A1
20140003891	Kobayashi	Jan 2014	A1
20140152966	Hwang et al.	Jun 2014	A1
20140342558	Ogura et al.	Nov 2014	A1
20160008841	Ogura et al.	Jan 2016	A1
20160163573	Ogura et al.	Jun 2016	A1

Foreign Referenced Citations (135)

Number	Date	Country
1773672	May 2006	CN
H01-241840	Sep 1989	JP
H04-085812	Mar 1992	JP
H06-5689	Jan 1994	JP
H06-89934	Mar 1994	JP
H07-263302	Oct 1995	JP
H07-283094	Oct 1995	JP
H08-162514	Jun 1996	JP
H09-045613	Feb 1997	JP
H9-148240	Jun 1997	JP
09-199568	Jul 1997	JP
H09-213616	Aug 1997	JP
H09-251953	Sep 1997	JP
09-312323	Dec 1997	JP
H10-50794	Feb 1998	JP
H10-74822	Mar 1998	JP
H10-144673	May 1998	JP
10-146744	Jun 1998	JP
10-209241	Jul 1998	JP
H10-189420	Jul 1998	JP
H10-261544	Sep 1998	JP
H10-261554	Sep 1998	JP
H10-261689	Sep 1998	JP
H10-294351	Nov 1998	JP
H10-335415	Dec 1998	JP
H11-16978	Jan 1999	JP
H11-74168	Mar 1999	JP
H11-111603	Apr 1999	JP
H11-3851	Jun 1999	JP
H11-156278	Jun 1999	JP
H11-251405	Sep 1999	JP
11-340301	Dec 1999	JP
2000-012443	Jan 2000	JP
2000-049089	Feb 2000	JP
2000-68188	Mar 2000	JP
2000-100886	Apr 2000	JP
2000-124124	Apr 2000	JP
2000-124129	Apr 2000	JP
2000-200822	Jul 2000	JP
2000-311846	Jul 2000	JP
2000-269297	Sep 2000	JP
2000-331922	Nov 2000	JP
2000-332080	Nov 2000	JP
2001-57334	Feb 2001	JP
2001-102292	Apr 2001	JP
2001-093827	Jun 2001	JP
2001-176792	Jun 2001	JP
03-211749	Sep 2001	JP
2002-510141	Feb 2002	JP
2002-353091	Dec 2002	JP
2003-007594	Jan 2003	JP
2003-059810	Feb 2003	JP
2003-077785	Mar 2003	JP
2003-224175	Aug 2003	JP
2003-309160	Oct 2003	JP
2003-324059	Nov 2003	JP
2003-324139	Nov 2003	JP
2003-338496	Nov 2003	JP
2004-15021	Jan 2004	JP
2004-015023	Jan 2004	JP
2004-31921	Jan 2004	JP
2004-072061	Mar 2004	JP
2004-087675	Mar 2004	JP
2004-146450	May 2004	JP
2004-152801	May 2004	JP
2004-193597	Jul 2004	JP
2004-200485	Jul 2004	JP
2004-207279	Jul 2004	JP
2004-241319	Aug 2004	JP
2004-260129	Sep 2004	JP
3600711	Sep 2004	JP
2004-304003	Oct 2004	JP
2004-311714	Nov 2004	JP
2004-319767	Nov 2004	JP
2004-336024	Nov 2004	JP
2005-46694	Feb 2005	JP
2005-57294	Mar 2005	JP
2005-093920	Apr 2005	JP
2005-101078	Apr 2005	JP
2005-101079	Apr 2005	JP
2005-123249	May 2005	JP
2005-167083	Jun 2005	JP
2005-210059	Aug 2005	JP
2005-243690	Sep 2005	JP
2005-303230	Oct 2005	JP
2006-203075	Aug 2006	JP
2006-216614	Aug 2006	JP
2006-228974	Aug 2006	JP
2006-229183	Aug 2006	JP
2006-245312	Sep 2006	JP
2006-253501	Sep 2006	JP
2006-269672	Oct 2006	JP
2006-287178	Oct 2006	JP
2006-335484	Dec 2006	JP
2007-005659	Jan 2007	JP
2007-288029	Jan 2007	JP
2007-067178	Mar 2007	JP
2007-150064	Jun 2007	JP
2007-150071	Jun 2007	JP
2007-158260	Jun 2007	JP
2007-208064	Aug 2007	JP
2007-227984	Sep 2007	JP
2007-287887	Nov 2007	JP
2008-311624	Dec 2008	JP
2009-99577	May 2009	JP
2009-164256	Jul 2009	JP
2006-253207	Sep 2009	JP
2009-076893	Sep 2009	JP
1997-0011065	Mar 1997	KR
1999-0023624	Mar 1999	KR
2001-0029862	Apr 2001	KR
2002-0035758	May 2002	KR
10-0387418	Jun 2003	KR
10-2003-0087418	Nov 2003	KR
2003-0086900	Nov 2003	KR
10-2004-0054517	Jun 2004	KR
1020050049935	May 2005	KR
10-2005-0051280	Jun 2005	KR
10-2006-0033423	Apr 2006	KR
1020060033423	Apr 2006	KR
2006-0050112	May 2006	KR
10-2006-0085188	Jul 2006	KR
10-2006-0088495	Aug 2006	KR
10-2006-0092061	Aug 2006	KR
10-2006-0097613	Sep 2006	KR
10-0634122	Oct 2006	KR
10-2007-0007262	Jan 2007	KR
2007-0003328	Jan 2007	KR
10-2007-0034979	Mar 2007	KR
10-0698352	Mar 2007	KR
10-2007-0062522	Jun 2007	KR
276353	May 1996	TW
2005-26494	Aug 2005	TW
200631680	Sep 2006	TW
I-268568	Dec 2006	TW

Non-Patent Literature Citations (105)

Entry
Trial Brief for Patent Invalidation for corresponding Korean Patent No. 10-1276946 dated Jul. 7, 2016, 69 pages. (English Translation is not available).
U.S. Appl. No. 15/047,056, filed Feb. 18, 2016 by Ogura et al. (Unpublished.)
Decision to Dismiss Amendment for Japanese Patent Application No. 2015-083350, dated May 24, 2016, 3 pages.
Notification of Reasons for Refusal for corresponding Japanese Patent Application No. 2014-253079, dated Nov. 15, 2016, 6 pages.
Non-Final Office Action for U.S. Appl. No. 14/863,375 dated Oct. 3, 2016, 9 pages.
Office Action for corresponding Chinese Application No. 20081010225036.7 dated Sep. 18, 2009, 4 pages.
Office Action for corresponding Korean Application No. 10-2008-0060084 dated Mar. 9, 2010, 5 pages.
Notice of Allowance of Korean Application No. 10-2008-0118967 dated Oct. 21, 2010, 2 pages total.
Office Action for corresponding Korean Application No. 10-2008-0132304 dated Oct. 25, 2010, 4 pages.
Office Action for corresponding Korean Application No. 10-2008-0132009 dated Jan. 18, 2011, 5 pages.
Invalidation Trial for corresponding Korean Patent No. 10-1001511 dated Apr. 13, 2011, 53 pages.
Notice of Allowance for corresponding Korean application No. 10-2010-0105888 dated Apr. 22, 2011, 3 pages.
Invalidation Trial for corresponding Korean Application No. 10-1010086 dated Apr. 25, 2011, 68 pages.
Office Action for corresponding Korean Application No. 10-2008-0132009 dated Jul. 21, 2011, 5 pages.
Office Action for corresponding Japanese Application No. 2007-172496 dated Sep. 27, 2011, 4 pages.
Invalidation Trial for corresponding Korean Patent No. 10-1036420 dated Sep. 27, 2011, 36 pages.
Office Action for corresponding Japanese Application No. 2007-340427 dated Oct. 4, 2011, 2 pages.
Office Action for corresponding Japanese Application No. 2007-340428 dated Oct. 4, 2011, 2 pages.
Invalidation Trial for corresponding Korean Patent No. 10-1047799 (Korean Patent application No. 10-2008-132304) dated Nov. 16, 2011, 69 pages.
Office Action for corresponding Japanese Application No. 2008-076610 dated Jan. 10, 2012, 2 pages.
Office Action for corresponding Japanese Application No. 2008-076611 dated Jan. 10, 2012, 2 pages.
Office Action for corresponding Japanese Application No. 2008-076608 dated Jan. 17, 2012, 4 pages.
Office Action for corresponding Taiwanese Application No. 097150911 dated Apr. 10, 2012, 6 pages.
Office Action for corresponding Japanese Application No. 2007-340428 dated Apr. 24, 2012, 3 pages.
Office Action for corresponding Japanese Application No. 2007-310676 dated May 8, 2012, 3 pages.
Office Action for corresponding Japanese Application No. 2007-310677 dated May 8, 2012, 4 pages.
Office Action for corresponding Taiwanese Application No. 097150912 dated Jun. 1, 2012, 6 pages.
Notice of Allowance for corresponding Korean Patent Application No. 10-2008-0132009 dated Jun. 22, 2012, 3 pages.
Office Action for corresponding Japanese Application No. 2007-310675 dated Jul. 31, 2012, 3 pages.
Decision of Patent for corresponding Japanese Patent Application No. 2007-310677 dated Oct. 16, 2012, 3 pages.
Office Action for corresponding Korean Patent Application No. 10-2012-0005204 dated Nov. 1, 2012, 6 pages.
Office Action for corresponding Japanese Patent Application No. 2008327897 dated Nov. 6, 2012, 4 pages.
Office Action for corresponding Japanese Patent Application No. 2007340430 dated Dec. 18, 2012, 3 pages.
Information Statement for corresponding Japanese Patent Application No. 2007-310676 dated Jan. 15, 2013, 4 pages.
Office Action for corresponding Japanese Patent Application No. 2011-265835 dated Apr. 23, 2013, 3 pages.
Trial Decision for corresponding Korean Patent No. 10-1047799 dated Jun. 25, 2013, 125 pages.
Office Action for corresponding Japanese Patent Application No. 2012-118585 dated Jun. 25, 2013, 3 pages.
Office Action for corresponding Japanese Patent Application No. 2011-257538 dated Jul. 2, 2013, 3 pages.
Invalidation Trial for corresponding Korean Patent No. 10-1213284 dated Jul. 3, 2013, 31 pages.
Invalidation trial for corresponding Taiwanese Patent No. 97124376 dated Jul. 30, 2013, 43 pages.
Invalidation Trial for corresponding Korean Patent No. 10-1170211 dated Aug. 7, 2013, 26 pages.
Office Action for corresponding Japanese Patent Application No. 2012-118584 dated Oct. 22, 2013, 2 pages.
Invalidation Trial for corresponding Korean Patent No. 10-1276946 dated Nov. 12, 2013, 52 pages.
Office Action for corresponding Japanese Patent Application No. 2011-257538 dated Dec. 3, 2013, 3 pages.
Argument in the Trial for Patent Invalidation for corresponding Korean Patent No. 10-1213284 dated Dec. 20, 2013, 19 pages.
Notice of Allowance for corresponding Korean Patent Application No. 10-2012-0005204 dated Jan. 22, 2014, 3 pages.
Argument in the Trial for Patent Invalidation for corresponding Korean Patent No. 10-1170211 dated Feb. 27, 2014, 21 pages. (English translation is not available).
Information Statement for corresponding Japanese Patent Application No. 2012-118583 dated May 16, 2014, 22 pages. (translation is not available).
Machine Translation of KR 10-2006-0033423 A published Apr. 19, 2006, 14 pages.
Office Action for corresponding Japanese Patent Application No. 2012-118583 dated Jun. 24, 2014, 2 pages. (translation is not available).
Argument in the Trial for Patent Invalidation for corresponding Korean Patent No. 10-1276946 dated May 28, 2014, 45 pages. (English translation is not available).
English Translation of JP 10-2006-0033423 published Apr. 2006.
Trial for Patent Invalidation for corresponding Korean Patent Application No. 10-1432358 dated Nov. 18, 2014, 54 pages. (English Translation is not available).
Office Action for corresponding Taiwanese Patent Application No. 101118484 dated Feb. 26, 2015, 15 pages. (English Translation is not available).
Trial for Patent Invalidation for corresponding Korean Patent Application No. 10-1432358, dated May 22, 2015, 60 pages. (English Translation is not available).
Non-Final Office Action for U.S. Appl. No. 12/324,788 dated May 27, 2011, 41 pages.
Non-Final Office Action for U.S. Appl. No. 12/163,951 dated Jul. 11, 2011, 18 pages.
Non-Final Office Action for U.S. Appl. No. 12/343,302 dated Aug. 19, 2011, 26 pages.
Non-Final Office Action for U.S. Appl. No. 12/324,802 dated Sep. 14, 2011, 13 pages.
Non-Final Office Action for U.S. Appl. No. 12/343,292 dated Oct. 28, 2011, 12 pages.
Final Office Action for U.S. Appl. No. 12/324,788 dated Dec. 7, 2011, 26 pages.
Final Office Action for U.S. Appl. No. 12/163,951 dated Jan. 19, 2012, 22 pages.
Non-Final Office Action for U.S. Appl. No. 12/324,794 dated Feb. 3, 2012, 8 pages.
Final Office Action for U.S. Appl. No. 12/343,302 dated Apr. 12, 2012, 33 pages.
Final Office Action for U.S. Appl. No. 12/324,802 dated Apr. 20, 2012, 14 pages.
Final Office Action for U.S. Appl. No. 12/343,292 dated Jun. 1, 2012, 15 pages.
Advisory Action for U.S. Appl. No. 12/343,292 dated Oct. 12, 2012, 3 pages.
Non-Final Office Action for U.S. Appl. No. 13/401,625 dated Mar. 14, 2013, 8 pages.
Notice of Allowance for U.S. Appl. No. 12/324,794 dated May 29, 2013, 7 pages.
Non-Final Office Action for U.S. Appl. No. 13/401,644 dated Jun. 21, 2013, 16 pages.
Non-Final Office Action for U.S. Appl. No. 13/401,617 dated Sep. 17, 2013, 8 pages.
Final Office Action for U.S. Appl. No. 13/401,625 dated Sep. 19, 2013, 11 pages.
Notice of Allowance for U.S. Appl. No. 14/011,993 dated Oct. 7, 2013, 11 pages.
Final Office Action for U.S. Appl. No. 13/401,644 dated Nov. 22, 2013, 20 pages.
Restriction Requirement for U.S. Appl. No. 12/163,951 dated Feb. 3, 2014, 7 pages.
Non-Final Office Action for U.S. Appl. No. 13/401,625 dated Mar. 28, 2014, 11 pages.
Supplemental Notice of Allowance for U.S. Appl. No. 14/011,993 dated Apr. 1, 2014, 2 pages.
Non-Final Office Action for U.S. Appl. No. 13/401,644 dated Apr. 4, 2014, 10 pages.
Non-Final Office Action for U.S. Appl. No. 12/324,788 dated Apr. 4, 2014, 30 pages.
Non-Final Office Action for U.S. Appl. No. 12/324,802 dated Apr. 7, 2014, 17 pages.
Non-Final Office Action for U.S. Appl. No. 12/343,302 dated Apr. 10, 2014, 22 pages.
Restriction Requirement for U.S. Appl. No. 12/343,292 dated Apr. 10, 2014, 6 pages.
Final Office Action for U.S. Appl. No. 13/401,617 dated Jun. 2, 2014, 10 pages.
Notice of Allowance for U.S. Appl. No. 12/163,951 dated Jul. 10, 2014, 9 pages.
Final Office Action for U.S. Appl. No. 12/324,802 dated Oct. 22, 2014, 24 pages.
Final Office Action for U.S. Appl. No. 12/343,292 dated on Nov. 5, 2014, 20 pages.
Final Office Action for U.S. Appl. No. 12/324,788 dated Nov. 6, 2014, 44 pages.
Advisory Action for U.S. Appl. No. 13/401,617 dated Nov. 7, 2014, 4 pages.
Final Office Action for U.S. Appl. No. 13/401,644 dated Dec. 1, 2014, 20 pages.
Non-Final Office Action for U.S. Appl. No. 13/401,625 dated Dec. 9, 2014, 16 pages.
Non-Final Office Action for U.S. Appl. No. 13/401,617 dated Feb. 2, 2015, 11 pages.
Non-Final Office Action for U.S. Appl. No. 12/343,292 dated Jun. 3, 2015, 25 pages.
Notice of Allowance for U.S. Appl. No. 13/401,625 dated Jun. 16, 2015, 15 pages.
Notice of Allowance for U.S. Appl. No. 12/324,802 dated Jun. 26, 2015, 20 pages.
Notice of Allowance for U.S. Appl. No. 13/401,644 dated Jun. 29, 2015, 15 pages.
Notice of Allowance for U.S. Appl. No. 13/401,617 dated Sep. 2, 2015, 14 pages.
Notice of Allowance for U.S. Appl. No. 12/343,292 dated Nov. 18, 2015, 20 pages.
Notice of Allowance for U.S. Appl. No. 14/447,409 dated Feb. 18, 2016, 14 pages.
Trial for Patent Invalidation for corresponding Taiwanese Patent Application No. I-394223 dated Oct. 20, 2015, 29 pages. (English translation is not available).
Notification of Reasons for Refusal for Japanese Patent Application No. 2016-226846, dated Sep. 26, 2017, 4 pages.
Patent Administrative Litigation document for corresponding Taiwan Patent No. I-394223, dated Sep. 25, 2017, 32 pages.
Second preparatory document for Litigation, corresponding Taiwan Patent No. I-394223, dated Mar. 26, 2018, 31 pages.
Final Office Action for U.S. Appl. No. 15/047,056 dated Jan. 18, 2018, 61 pages.
Decision of Refusal for Japanese Patent Application No. JP 2016-226846, dated Mar. 6, 2018, 6 pages.
Third preparatory document for Patent Administrative Litigation for Taiwan Patent No. I-394223, dated Apr. 27, 2018, 11 pages.

Related Publications (1)

	Number	Date	Country
	20160079099 A1	Mar 2016	US

Continuations (2)

	Number	Date	Country
Parent	13401617	Feb 2012	US
Child	14952657		US
Parent	12163951	Jun 2008	US
Child	13401617		US

Substrate treating apparatus with parallel gas supply pipes and a gas exhaust pipe

Information

Patent Number

Date Filed

Date Issued

Inventors

Original Assignees

Examiners

Agents

CPC

Field of Search

US

CPC

International Classifications

Term Extension

Abstract