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Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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CPC
C30B29/00
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Parent Industries
C
CHEMISTRY METALLURGY
C30
Crystal growth
C30B
SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...
Current Industry
C30B29/00
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Sub Industries
C30B29/02
Elements
C30B29/04
Diamond
C30B29/06
Silicon
C30B29/08
Germanium
C30B29/10
Inorganic compounds or compositions
C30B29/12
Halides
C30B29/14
Phosphates
C30B29/16
Oxides
C30B29/18
Quartz
C30B29/20
Aluminium oxides
C30B29/22
Complex oxides
C30B29/225
based on rare earth copper oxides
C30B29/24
with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al
C30B29/26
with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
C30B29/28
with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al
C30B29/30
Niobates Vanadates Tantalates
C30B29/32
Titanates Germanates Molybdates Tungstates
C30B29/34
Silicates
C30B29/36
Carbides
C30B29/38
Nitrides
C30B29/40
AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C30B29/403
AIII-nitrides
C30B29/406
Gallium nitride
C30B29/42
Gallium arsenide
C30B29/44
Gallium phosphide
C30B29/46
Sulfur-, selenium- or tellurium-containing compounds
C30B29/48
AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
C30B29/50
Cadmium sulfide
C30B29/52
Alloys
C30B29/54
Organic compounds
C30B29/56
Tartrates
C30B29/58
Macromolecular compounds
C30B29/60
characterised by shape
C30B29/602
Nanotubes
C30B29/605
Products containing multiple oriented crystallites
C30B29/607
Crystals of complex geometrical shape
C30B29/62
Whiskers or needles
C30B29/64
Flat crystals
C30B29/66
Crystals of complex geometrical shape
C30B29/68
Crystals with laminate structure
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Ion conductive material, electrolyte including ion conductive mater...
Patent number
11,978,847
Issue date
May 7, 2024
Saint-Gobain Ceramics & Plastics, Inc.
C30 - CRYSTAL GROWTH
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Optical lens assemblies
Patent number
11,977,231
Issue date
May 7, 2024
Meta Platforms Technologies, LLC
C30 - CRYSTAL GROWTH
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Patent Grant
Unusual high thermal conductivity in boron arsenide bulk crystals
Patent number
11,975,979
Issue date
May 7, 2024
University of Houston System
C01 - INORGANIC CHEMISTRY
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Crystal pulling systems having fluid-filled exhaust tubes that exte...
Patent number
11,976,379
Issue date
May 7, 2024
GlobalWafers Co., Ltd.
C30 - CRYSTAL GROWTH
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Method for manufacturing a monocrystalline layer of GaAs material a...
Patent number
11,976,380
Issue date
May 7, 2024
Soitec
C30 - CRYSTAL GROWTH
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Ion conductive material including halide material, electrolyte incl...
Patent number
11,973,186
Issue date
Apr 30, 2024
Saint-Gobain Ceramics & Plastics, Inc.
Vladimir Ouspenski
C30 - CRYSTAL GROWTH
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Nitride semiconductor substrate, method for manufacturing nitride s...
Patent number
11,970,784
Issue date
Apr 30, 2024
Sumitomo Chemical Company, Limited
Takehiro Yoshida
C30 - CRYSTAL GROWTH
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Template-assisted synthesis of 2D nanosheets using nanoparticle tem...
Patent number
11,964,879
Issue date
Apr 23, 2024
Nanoco 2D Materials Limited
Steven Daniels
C01 - INORGANIC CHEMISTRY
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Patent Grant
Crystalline oxide semiconductor film and semiconductor device
Patent number
11,967,618
Issue date
Apr 23, 2024
FLOSFIA INC.
Isao Takahashi
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Nanostructured battery active materials and methods of producing same
Patent number
11,967,707
Issue date
Apr 23, 2024
OneD Material, Inc.
Wanqing Cao
C01 - INORGANIC CHEMISTRY
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Method for manufacturing sputtering target, method for forming oxid...
Patent number
11,967,505
Issue date
Apr 23, 2024
Semiconductor Energy Laboratory Co., Ltd.
Shunpei Yamazaki
B82 - NANO-TECHNOLOGY
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Patent Grant
Group 13 element nitride wafer with reduced variation in off-cut angle
Patent number
11,965,268
Issue date
Apr 23, 2024
IV WORKS CO., LTD.
Vianney Leroux
C30 - CRYSTAL GROWTH
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Nitride semiconductor substrate, laminate, substrate selection prog...
Patent number
11,967,617
Issue date
Apr 23, 2024
Sumitomo Chemical Company, Limited
Fumimasa Horikiri
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Crystal structures comprising elastin-like peptides
Patent number
11,965,016
Issue date
Apr 23, 2024
Mintech-V, LLC
Sherif Ahmed Abdelsalam Elsharkawy
C07 - ORGANIC CHEMISTRY
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Electrode for depositing polycrystalline silicon
Patent number
11,965,264
Issue date
Apr 23, 2024
Wacker Chemie AG
Heinz Kraus
C01 - INORGANIC CHEMISTRY
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Semiconductor wafer, radiation detection element, radiation detecto...
Patent number
11,967,659
Issue date
Apr 23, 2024
JX Metals Corporation
Koji Murakami
C30 - CRYSTAL GROWTH
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Patent Grant
Method for producing GaN layered substrate
Patent number
11,967,530
Issue date
Apr 23, 2024
Shin-Etsu Chemical Co., Ltd.
Sumio Sekiyama
B32 - LAYERED PRODUCTS
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Patent Grant
Device and method of manufacturing AIII-BV-crystals and substrate w...
Patent number
11,965,266
Issue date
Apr 23, 2024
Freiberger Compound Materials GMBH
Stefan Eichler
C30 - CRYSTAL GROWTH
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Method for pulling a cylindrical crystal from a melt
Patent number
11,965,267
Issue date
Apr 23, 2024
PVA TePla AG
Andreas Muehe
C30 - CRYSTAL GROWTH
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Method for manufacturing silicon single crystal wafer and silicon s...
Patent number
11,959,191
Issue date
Apr 16, 2024
Shin-Etsu Handotai Co., Ltd.
Wei Feng Qu
C30 - CRYSTAL GROWTH
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Method for manufacturing a semiconductor substrate and device by bo...
Patent number
11,961,765
Issue date
Apr 16, 2024
Mitsubishi Electric Corporation
Shuichi Hiza
C30 - CRYSTAL GROWTH
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Patent Grant
SiC epitaxial wafer, production method therefor, and defect identif...
Patent number
11,961,736
Issue date
Apr 16, 2024
Resonac Corporation
Ling Guo
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Grant
Single crystal multi-element positive electrode material, preparati...
Patent number
11,955,635
Issue date
Apr 9, 2024
Beijing Easpring Material Technology Co., Ltd.
Yiseng Hu
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Silicon carbide crystal
Patent number
11,952,676
Issue date
Apr 9, 2024
GlobalWafers Co., Ltd.
Ching-Shan Lin
C30 - CRYSTAL GROWTH
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Patent Grant
Method for manufacturing etched SiC substrate and grown SiC substra...
Patent number
11,952,678
Issue date
Apr 9, 2024
Kwansei Gakuin Educational Foundation
Tadaaki Kaneko
C30 - CRYSTAL GROWTH
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Optimized growth of stable hybrid perovskite materials for electrom...
Patent number
11,952,679
Issue date
Apr 9, 2024
The Regents of the University of Michigan
Suneel Joglekar
C30 - CRYSTAL GROWTH
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Patent Grant
Method for manufacturing a single crystal by solution growth enabli...
Patent number
11,952,680
Issue date
Apr 9, 2024
Commissariat a l'Energie Atomique et Aux Energies Alternatives
Bruno Pintault
C30 - CRYSTAL GROWTH
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Patent Grant
Group III nitride semiconductor device and production method therefor
Patent number
11,955,581
Issue date
Apr 9, 2024
Toyoda Gosei Co., Ltd.
Koji Okuno
H01 - BASIC ELECTRIC ELEMENTS
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Vapor phase epitaxy method
Patent number
11,955,334
Issue date
Apr 9, 2024
Azur Space Solar Power GmbH
Gregor Keller
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Grant
Crystalline solids of nicotinic acid mononucleotide and esters ther...
Patent number
11,952,396
Issue date
Apr 9, 2024
Metro International Biotech, LLC
Jonathan N. Kremsky
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
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Patent Application
LOW TEMPERATURE CO-FLOW EPITAXIAL DEPOSITION PROCESS
Publication number
20240145240
Publication date
May 2, 2024
Applied Materials, Inc.
Chen-Ying WU
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Application
SiC SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR
Publication number
20240141544
Publication date
May 2, 2024
NGK Insulators, Ltd.
Fumiyasu NOZAKI
C30 - CRYSTAL GROWTH
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SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTAL
Publication number
20240141548
Publication date
May 2, 2024
Shin-Etsu Handotai Co., Ltd.
Kiyotaka TAKANO
C30 - CRYSTAL GROWTH
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VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER
Publication number
20240141553
Publication date
May 2, 2024
Taiwan Semiconductor Manufacturing Co., Ltd.
Pu-Fang CHEN
C30 - CRYSTAL GROWTH
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Patent Application
CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER
Publication number
20240145550
Publication date
May 2, 2024
Applied Materials, Inc.
Jason JEWELL
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Application
DNA-PROGRAMMED PHOTONIC CRYSTAL FABRICATION PROCESSES
Publication number
20240141545
Publication date
May 2, 2024
Brandeis University
William Benjamin Rogers
C30 - CRYSTAL GROWTH
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Patent Application
PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...
Publication number
20240141549
Publication date
May 2, 2024
Peking University
Xinqiang WANG
C30 - CRYSTAL GROWTH
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Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURIN...
Publication number
20240141552
Publication date
May 2, 2024
Shin-Etsu Chemical Co., Ltd.
Yoshihiro KUBOTA
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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METHOD FOR EVALUATING CRYSTAL DEFECTS IN SILICON CARBIDE SINGLE CRY...
Publication number
20240142390
Publication date
May 2, 2024
Shin-Etsu Handotai Co., Ltd.
Yutaka SHIGA
C30 - CRYSTAL GROWTH
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Patent Application
PREPARATION METHOD OF P-TYPE HIGH-RESISTANCE AND ULTRA-HIGH-RESISTA...
Publication number
20240141547
Publication date
May 2, 2024
Shanghai Institute of Microsystem and Information Technology Chinese Academy...
Xing Wei
C30 - CRYSTAL GROWTH
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Patent Application
TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE...
Publication number
20240145622
Publication date
May 2, 2024
KYOCERA CORPORATION
Takeshi KAMIKAWA
C30 - CRYSTAL GROWTH
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Patent Application
SILICON CARBIDE WAFER MANUFACTURING APPARATUS
Publication number
20240141550
Publication date
May 2, 2024
DENSO CORPORATION
HIROAKI FUJIBAYASHI
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Application
CRYSTALLINE SALT FORMS OF BOC-D-ARG-DMT-LYS-(BOC)-PHE-NH2
Publication number
20240140990
Publication date
May 2, 2024
Stealth BioTherapeutics Inc.
Scott M. Duncan
C30 - CRYSTAL GROWTH
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Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
Publication number
20240136181
Publication date
Apr 25, 2024
KYOCERA CORPORATION
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C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Application
CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELE...
Publication number
20240133077
Publication date
Apr 25, 2024
Mainstream Engineering Corporation
Jesse A. Johnson
C30 - CRYSTAL GROWTH
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Patent Application
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...
Publication number
20240136409
Publication date
Apr 25, 2024
DENSO CORPORATION
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C30 - CRYSTAL GROWTH
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HYDROGEN GENERATION CATALYST, AND CATALYST INK
Publication number
20240133061
Publication date
Apr 25, 2024
DIC CORPORATION
Youki Kou
C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
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Patent Application
MULTILAYER BODY
Publication number
20240133075
Publication date
Apr 25, 2024
Mitsui Mining and Smelting Co., Ltd.
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H01 - BASIC ELECTRIC ELEMENTS
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Publication number
20240133076
Publication date
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C01 - INORGANIC CHEMISTRY
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Publication number
20240136464
Publication date
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Shin-Etsu Chemical Co., Ltd.
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Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
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SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE...
Publication number
20240125004
Publication date
Apr 18, 2024
GLOBALWAFERS CO., LTD.
Chieh HU
C30 - CRYSTAL GROWTH
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Publication number
20240128076
Publication date
Apr 18, 2024
CubicPV Inc.
Michael D. Irwin
C01 - INORGANIC CHEMISTRY
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Patent Application
SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE...
Publication number
20240125003
Publication date
Apr 18, 2024
GLOBALWAFERS CO., LTD.
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C30 - CRYSTAL GROWTH
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Publication number
20240125002
Publication date
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Hanwha Solutions Corporation
Jin Sung PARK
C30 - CRYSTAL GROWTH
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METHOD FOR CRYSTAL PULLING
Publication number
20240125005
Publication date
Apr 18, 2024
SICHUAN JINKO SOLAR CO., LTD.
Chunsheng SU
C30 - CRYSTAL GROWTH
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Publication number
20240117525
Publication date
Apr 11, 2024
Shin-Etsu Handotai Co., Ltd.
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C30 - CRYSTAL GROWTH
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Patent Application
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Publication number
20240117521
Publication date
Apr 11, 2024
The Trustees of Princeton University
Barry Rand
C30 - CRYSTAL GROWTH
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Patent Application
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Publication number
20240120431
Publication date
Apr 11, 2024
SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Guoqiang LI
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHOD AND APPARATUS FOR DEPOSITION OF A LAYER OF PEROVSKITE ON A S...
Publication number
20240117524
Publication date
Apr 11, 2024
Consiglio Nazionale Delle Ricerche
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C30 - CRYSTAL GROWTH
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Patent Application
Gradient Single-Crystal Positive Electrode Material, And Preparatio...
Publication number
20240117520
Publication date
Apr 11, 2024
HENAN KELONG NEW ENERGY CO., LTD
Jinsuo LI
C30 - CRYSTAL GROWTH