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Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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C30B29/00
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Parent Industries
C
CHEMISTRY METALLURGY
C30
Crystal growth
C30B
SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...
Current Industry
C30B29/00
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Sub Industries
C30B29/02
Elements
C30B29/04
Diamond
C30B29/06
Silicon
C30B29/08
Germanium
C30B29/10
Inorganic compounds or compositions
C30B29/12
Halides
C30B29/14
Phosphates
C30B29/16
Oxides
C30B29/18
Quartz
C30B29/20
Aluminium oxides
C30B29/22
Complex oxides
C30B29/225
based on rare earth copper oxides
C30B29/24
with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al
C30B29/26
with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
C30B29/28
with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al
C30B29/30
Niobates Vanadates Tantalates
C30B29/32
Titanates Germanates Molybdates Tungstates
C30B29/34
Silicates
C30B29/36
Carbides
C30B29/38
Nitrides
C30B29/40
AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C30B29/403
AIII-nitrides
C30B29/406
Gallium nitride
C30B29/42
Gallium arsenide
C30B29/44
Gallium phosphide
C30B29/46
Sulfur-, selenium- or tellurium-containing compounds
C30B29/48
AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
C30B29/50
Cadmium sulfide
C30B29/52
Alloys
C30B29/54
Organic compounds
C30B29/56
Tartrates
C30B29/58
Macromolecular compounds
C30B29/60
characterised by shape
C30B29/602
Nanotubes
C30B29/605
Products containing multiple oriented crystallites
C30B29/607
Crystals of complex geometrical shape
C30B29/62
Whiskers or needles
C30B29/64
Flat crystals
C30B29/66
Crystals of complex geometrical shape
C30B29/68
Crystals with laminate structure
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last 30 patents
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Patent Grant
Silicon carbide single crystal and semiconductor apparatus
Patent number
12,129,571
Issue date
Oct 29, 2024
Mitsubishi Electric Corporation
Hiroyuki Kinoshita
C30 - CRYSTAL GROWTH
Information
Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
Patent number
12,129,572
Issue date
Oct 29, 2024
Sumitomo Chemical Company, Limited
Hajime Fujikura
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
Patent number
12,132,145
Issue date
Oct 29, 2024
Nichia Corporation
Tomoya Yamashita
C30 - CRYSTAL GROWTH
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Patent Grant
Epitaxial growth apparatus and method of producing epitaxial wafer
Patent number
12,129,543
Issue date
Oct 29, 2024
Sumco Corporation
Haku Komori
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Patent Grant
Manufacturing method of single-crystal silicon substrate
Patent number
12,129,570
Issue date
Oct 29, 2024
Disco Corporation
Hayato Iga
C30 - CRYSTAL GROWTH
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Patent Grant
High-throughput crystallographic screening device and method for cr...
Patent number
12,128,399
Issue date
Oct 29, 2024
University of Puerto Rico
Jose Lasalde-Dominicci
B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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Patent Grant
Biopolymer concentration method, crystallization method, and nanost...
Patent number
12,123,106
Issue date
Oct 22, 2024
EEJA LTD.
Tetsuo Okutsu
B82 - NANO-TECHNOLOGY
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Patent Grant
Metastable single-crystal rare earth magnet fine powder and method...
Patent number
12,121,963
Issue date
Oct 22, 2024
National Institute of Advanced Industrial Science and Technology
Yusuke Hirayama
B22 - CASTING POWDER METALLURGY
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Crystal growth method and wafer
Patent number
12,123,105
Issue date
Oct 22, 2024
GlobalWafers Co., Ltd.
Ching-Shan Lin
C30 - CRYSTAL GROWTH
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Patent Grant
Silicon carbide epitaxial substrate and silicon carbide semiconduct...
Patent number
12,125,881
Issue date
Oct 22, 2024
Sumitomo Electric Industries, Ltd.
Tsutomu Hori
H01 - BASIC ELECTRIC ELEMENTS
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Arcuate seed casting method
Patent number
12,123,104
Issue date
Oct 22, 2024
RTX Corporation
Ryan C. Breneman
B22 - CASTING POWDER METALLURGY
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Patent Grant
Large dimension silicon carbide single crystalline materials with r...
Patent number
12,125,701
Issue date
Oct 22, 2024
Wolfspeed, Inc.
Yuri Khlebnikov
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Method of forming monocrystalline nickel-titanium films on single c...
Patent number
12,116,271
Issue date
Oct 15, 2024
Arizona Board of Regents on behalf of Arizona State University
Jagannathan Rajagopalan
B81 - MICRO-STRUCTURAL TECHNOLOGY
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Patent Grant
Group III nitride single crystal substrate and method for productio...
Patent number
12,116,697
Issue date
Oct 15, 2024
Tokuyama Corporation
Toru Nagashima
C30 - CRYSTAL GROWTH
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Patent Grant
Process for synthesizing indium phosphide by liquid phosphorus inje...
Patent number
12,116,690
Issue date
Oct 15, 2024
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
Lijie Fu
C30 - CRYSTAL GROWTH
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Patent Grant
Silicon carbide substrate
Patent number
12,116,696
Issue date
Oct 15, 2024
Sumitomo Electric Industries, Ltd.
Hiroki Takaoka
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Cylinder assembly for improving region of defect-free growth of cry...
Patent number
12,116,693
Issue date
Oct 15, 2024
XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
Wenwu Yang
C30 - CRYSTAL GROWTH
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Patent Grant
Optimized heteroepitaxial growth of semiconductors
Patent number
12,116,695
Issue date
Oct 15, 2024
United States of America as represented by Secretary of the Air Force
Vladimir Tassev
C30 - CRYSTAL GROWTH
Information
Patent Grant
Methods and devices for growing scintillation crystals
Patent number
12,116,517
Issue date
Oct 15, 2024
MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
Yu Wang
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing silicon single crystal
Patent number
12,116,691
Issue date
Oct 15, 2024
Sumco Corporation
Yasufumi Kawakami
C30 - CRYSTAL GROWTH
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Patent Grant
Device and method for pulling a single crystal of semiconductor mat...
Patent number
12,116,694
Issue date
Oct 15, 2024
Siltronic AG
Rolf Schmid
C30 - CRYSTAL GROWTH
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Patent Grant
Surface emitting laser element and manufacturing method of the same
Patent number
12,113,333
Issue date
Oct 8, 2024
Kyoto University
Susumu Noda
C30 - CRYSTAL GROWTH
Information
Patent Grant
Pseudo-substrate with improved efficiency of usage of single crysta...
Patent number
12,112,976
Issue date
Oct 8, 2024
Soitec
Fabrice Letertre
C30 - CRYSTAL GROWTH
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Patent Grant
Powder mixture of magnetoplumbite-type hexagonal ferrite, method fo...
Patent number
12,112,871
Issue date
Oct 8, 2024
FUJIFILM Corporation
Hirokazu Hashimoto
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Methods for producing 2D materials by moving forming layers dispose...
Patent number
12,110,610
Issue date
Oct 8, 2024
General Graphene Corp.
James Vig Sherrill
C30 - CRYSTAL GROWTH
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Patent Grant
Methods for forming a single crystal silicon ingot with reduced cru...
Patent number
12,110,609
Issue date
Oct 8, 2024
GlobalWafers Co., Ltd.
Richard Joseph Phillips
C30 - CRYSTAL GROWTH
Information
Patent Grant
Crystalline salt forms of Boc-D-Arg-DMT-Lys-(Boc)-Phe-NH2
Patent number
12,110,345
Issue date
Oct 8, 2024
Stealth BioTherapeutics Inc.
Scott M. Duncan
C30 - CRYSTAL GROWTH
Information
Patent Grant
Nitride crystal substrate and method for manufacturing the same
Patent number
12,104,279
Issue date
Oct 1, 2024
Sumitomo Chemical Company, Limited
Fumimasa Horikiri
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Method of providing a wrinkle pattern or producing a substrate havi...
Patent number
12,104,280
Issue date
Oct 1, 2024
City University of Hong Kong
Thuc Hue Ly
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
Patent number
12,107,129
Issue date
Oct 1, 2024
Mitsubishi Chemical Corporation
Satoru Nagao
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
SYSTEMS AND METHODS FOR MICROVOID ANALYSIS IN CRYSTALS GROWN BY CON...
Publication number
20240352616
Publication date
Oct 24, 2024
GLOBALWAFERS CO., LTD.
Matteo Pannocchia
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MO...
Publication number
20240352620
Publication date
Oct 24, 2024
Siltronic AG
Karl MANGELBERGER
C30 - CRYSTAL GROWTH
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Patent Application
NANOCRYSTALLINE DIAMOND WITH AMORPHOUS INTERFACIAL LAYER
Publication number
20240352621
Publication date
Oct 24, 2024
Applied Materials, Inc.
Sze Chieh Tan
C30 - CRYSTAL GROWTH
Information
Patent Application
Method, Apparatus, Equipment for Accurately Adjusting ADC Camera an...
Publication number
20240352615
Publication date
Oct 24, 2024
Xi'an ESWIN Material Technology Co., Ltd.
Shaojie SONG
C30 - CRYSTAL GROWTH
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Patent Application
GROUP-III NITRIDE SUBSTRATE
Publication number
20240352623
Publication date
Oct 24, 2024
Panasonic Holdings Corporation
Yusuke MORI
C30 - CRYSTAL GROWTH
Information
Patent Application
APPARATUS AND METHOD FOR SYNTHESIZING AND CONTINUOUSLY GROWING PHOS...
Publication number
20240352624
Publication date
Oct 24, 2024
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
Niefeng SUN
C30 - CRYSTAL GROWTH
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Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFA...
Publication number
20240355621
Publication date
Oct 24, 2024
TAMURA CORPORATION
Kohei SASAKI
C30 - CRYSTAL GROWTH
Information
Patent Application
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...
Publication number
20240352617
Publication date
Oct 24, 2024
II-VI ADVANCED MATERIALS, LLC
Ilya ZWIEBACK
C01 - INORGANIC CHEMISTRY
Information
Patent Application
Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plat...
Publication number
20240352614
Publication date
Oct 24, 2024
Crystal Systems Corporation
Isamu Shindo
C30 - CRYSTAL GROWTH
Information
Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
Publication number
20240352622
Publication date
Oct 24, 2024
Wolfspeed, Inc.
Yuri Khlebnikov
C30 - CRYSTAL GROWTH
Information
Patent Application
SINGLE-CRYSTAL SILICON CARBIDE WAFER, AND SINGLE-CRYSTAL SILICON CA...
Publication number
20240344237
Publication date
Oct 17, 2024
Central Glass Company, Limited
Tomonori UMEZAKI
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP...
Publication number
20240344238
Publication date
Oct 17, 2024
NGK Insulators, Ltd.
Katsuhiro IMAI
C30 - CRYSTAL GROWTH
Information
Patent Application
LARGE AREA DEVICE-QUALITY DIAMOND SUBSTRATES (LADDIS)
Publication number
20240344236
Publication date
Oct 17, 2024
Chih Shiue YAN
C30 - CRYSTAL GROWTH
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Patent Application
NICKEL-BASED SUPERALLOY, SINGLE-CRYSTAL BLADE AND TURBOMACHINE
Publication number
20240344180
Publication date
Oct 17, 2024
SAFRAN
Jérémy RAME
C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information
Patent Application
CRUCIBLE COMBINATION AND THERMAL FIELD ASSEMBLY
Publication number
20240344233
Publication date
Oct 17, 2024
LONGI GREEN ENERGY TECHNOLOGY CO., LTD.
Hong YAO
C30 - CRYSTAL GROWTH
Information
Patent Application
MOLYBDENUM PENTACHLORIDE CONDITIONING AND CRYSTALLINE PHASE MANIPUL...
Publication number
20240344235
Publication date
Oct 17, 2024
L'air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Ge...
Feng LI
C30 - CRYSTAL GROWTH
Information
Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
Publication number
20240337044
Publication date
Oct 10, 2024
DENSO CORPORATION
NOBUYUKI OYA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHODS FOR CLEANING THE PULL CABLE OF AN INGOT PULLER APPARATUS
Publication number
20240335863
Publication date
Oct 10, 2024
GLOBALWAFERS CO., LTD.
Chin-Hung Ho
B08 - CLEANING
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Patent Application
METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
Publication number
20240328029
Publication date
Oct 3, 2024
Shin-Etsu Handotai Co., Ltd.
Keisuke MIHARA
C30 - CRYSTAL GROWTH
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Patent Application
FILM FORMING METHOD AND FILM FORMING APPARATUS
Publication number
20240328033
Publication date
Oct 3, 2024
TOKYO ELECTRON LIMITED
Tuhin Shuvra BASU
C30 - CRYSTAL GROWTH
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Patent Application
PURIFICATION METHOD FOR COPPER FOIL
Publication number
20240328026
Publication date
Oct 3, 2024
Kaihui LIU
C30 - CRYSTAL GROWTH
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Patent Application
SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...
Publication number
20240328032
Publication date
Oct 3, 2024
ROHM CO., LTD.
Makoto TAKAMURA
C30 - CRYSTAL GROWTH
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Patent Application
LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER
Publication number
20240332365
Publication date
Oct 3, 2024
STMicroelectronics International N.V.
Björn MAGNUSSON LINDGREN
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRE...
Publication number
20240332016
Publication date
Oct 3, 2024
ASM IP HOLDING B.V.
Amir Kajbafvala
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
LOW RESISTIVITY WAFER
Publication number
20240328034
Publication date
Oct 3, 2024
SUMCO CORPORATION
Yasuhito NARUSHIMA
C30 - CRYSTAL GROWTH
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Patent Application
SiC CRYSTAL GROWTH APPARATUS AND METHOD
Publication number
20240328031
Publication date
Oct 3, 2024
SK Siltron CSS, LLC
Andrey SOUKHOJAK
C30 - CRYSTAL GROWTH
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Patent Application
LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...
Publication number
20240332362
Publication date
Oct 3, 2024
Shin-Etsu Chemical Co., Ltd.
Hitoshi NOGUCHI
B82 - NANO-TECHNOLOGY
Information
Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...
Publication number
20240332011
Publication date
Oct 3, 2024
STMicroelectronics International N.V.
Björn MAGNUSSON LINDGREN
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
Publication number
20240332021
Publication date
Oct 3, 2024
SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
Fen GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...
Publication number
20240328030
Publication date
Oct 3, 2024
Hexatech, Inc.
Rafael Dalmau
C30 - CRYSTAL GROWTH