3456169

Information

• Patent Grant
• 3456169

• References
• Source

• Patent Number

  3,456,169

• Date Filed

  Not available

• Date Issued

  Tuesday, July 15, 1969
  55 years ago

• CPC

  • H03K5/023 - using field effect transistors
  • B21C23/211 - Press driving devices
  • B21C23/32 - Lubrication of metal being extruded or of dies, or the like
  • C10M7/00 - Solid or semi-solid compositions essentially based on lubricating components other than mineral lubricating oils or fatty oils and their use as lubricants Use as lubricants of single solid or semi-solid substances
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02238 - silicon in uncombined form
  • H01L21/02255 - formation by thermal treatment
  • H01L21/31662 - of silicon in uncombined form
  • H01L21/74 - Making of localized buried regions
  • H01L21/82 - to produce devices
  • H01L21/8238 - Complementary field-effect transistors
  • H01L23/291 - Oxides or nitrides or carbides
  • H01L23/522 - including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/5227 - Inductive arrangements or effects of, or between, wiring layers
  • H01L24/18 - High density interconnect [HDI] connectors; Manufacturing methods related thereto
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L27/0251 - for MOS devices
  • H01L27/0825 - Combination of vertical direct transistors of the same conductivity type having different characteristics,(
  • H01L27/088 - the components being field-effect transistors with insulated gate
  • H01L27/092 - Complementary MIS field-effect transistors
  • H01L29/0638 - for preventing surface leakage due to surface inversion layer
  • H03F3/347 - in integrated circuits
  • H01L2924/12036 - PN diode
  • H01L2924/1306 - Field-effect transistor [FET]
  • H01L2924/14 - Integrated circuits
  • Y10S2/909 - Head protector
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/049 - Equivalence and options
  • Y10S148/05 - Etch and refill
  • Y10S148/053 - Field effect transistors fets
  • Y10S148/06 - Gettering
  • Y10S148/062 - Gold diffusion

• US Classifications

  • 257 - Active solid-state devices
  • 002 - Apparel
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process