Number | Date | Country | Kind |
---|---|---|---|
90101925.7 | Jan 1990 | EPX |
Number | Name | Date | Kind |
---|---|---|---|
4446375 | Aird | May 1984 | |
4794431 | Park | Dec 1988 |
Number | Date | Country |
---|---|---|
0026788 | Sep 1980 | EPX |
0240985 | Nov 1986 | DEX |
57-93571 | Jun 1982 | JPX |
59-172262 | Sep 1984 | JPX |
62-274645 | Nov 1987 | JPX |
Entry |
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Japan Patent Specifications, vol. 9, No. 263 (1986), Oct. 19, 1985, Kazuo Kanbayashi "Semiconductor Device". |
Japan Patent Specifications, vol. 10, No. 268, Sep. 12, 1986, Seizo Akasaka, "High-Frequency Ground Structure of Semiconductor Chip". |
Japan Patent Specifications, vol. 11, No. 108, Apr. 4, 1987, Tetsuo Mori "Microwave Transistor Device". |
Japan Patent Specifications, vol. 12, No. 174, May 24, 1988, Yoshie Nomura, "High-Frequency Transistor". |