ELECTRONIC COMPONENT WITH LEAD USING PB-FREE SOLDER

Abstract

The present invention proposes a semiconductor device including a semiconductor chip having a plurality of electrodes, a plurality of leads electrically connected to the plurality of electrodes of the semiconductor chip by bonding wires, and a resin for implementing the semiconductor chip, wherein the plurality of leads are comprised of two or more kinds of leads having different rigidities.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

In FIG. 1, (a) is a side view of a lead type semiconductor device implemented on a substrate according to a first embodiment, (b) is a view showing stress acting on the lead type semiconductor device caused by substrate warpage, and (c) is a top view of the lead type semiconductor device according to the first embodiment.

In FIG. 2, (a) is a flow chart illustrating a manufacturing method for the lead type semiconductor device according to the first embodiment, and (b) to (f) are schematic depictions illustrating the manufacturing process.

FIG. 3 is a flow chart illustrating a manufacturing method for a lead type semiconductor device according to a second embodiment.

In FIG. 4, (a) is a side view of a lead type semiconductor device implemented on a substrate according to a third embodiment, and (b) is a top view of the lead type semiconductor device of FIG. 4 (a).

In FIG. 5, (a) is a flow chart illustrating a manufacturing process for the lead type semiconductor device according to the third embodiment, and (b) shows a top view of a lead frame after a half etching process of leads and a cross-section view taken along a dotted line A-A′.

FIG. 6 is a top view of a lead type semiconductor device according to a fourth embodiment.

In FIG. 7, (a) is a top view of a lead type semiconductor device according to a fifth embodiment, and (b) is an enlarged cross-section view of an end thereof.

FIG. 8 is a diagram showing a stress-distortion curve when a large distortion is applied to leads lying between small pieces.

In FIG. 9, (a) is a side view of another lead type semiconductor device according to the fourth embodiment, and (b) is a top view of the device.

FIG. 10 is a cross-section view of a lead type semiconductor device.

FIG. 11 is a perspective view of an electronics device in which the lead type electronic components of the invention are installed.

Claims

1. A semiconductor device comprising: a semiconductor chip having a plurality of electrodes;a plurality of leads electrically connected to the plurality of electrodes of the semiconductor chip by bonding wires; anda resin for implementing the semiconductor chip, wherein the plurality of leads include two or more kinds of leads having different rigidities.

2. A semiconductor device comprising: a semiconductor chip having a plurality of electrodes;a plurality of leads electrically connected to the plurality of electrodes of the semiconductor chip by bonding wires; anda resin for implementing the semiconductor chip, wherein the plurality of leads include a first lead having first rigidity and a second lead having second rigidity different from the first rigidity.

3. The semiconductor device according to claim 2, wherein a plurality of first leads are provided adjacent to each other, and a plurality of second leads are also provided adjacent to each other.

4. The semiconductor device according to claim 2, wherein the first lead is formed of material different from that of the second lead.

5. The semiconductor device according to claim 4, wherein the first lead is a Cu lead, and the second lead is a Alloy 42 lead.

6. The semiconductor device according to claim 2, wherein the first lead has a width different from that of the second lead.

7. The semiconductor device according to claim 2, wherein the first lead has a thickness different from that of the second lead.

8. The semiconductor device according to claim 7, wherein the first lead is formed of the same material as that of the second lead.

9. The semiconductor device according to claim 2, wherein the first lead is formed of the same material as that of the second lead and a surface thereof is provided with a metal film.

10. A semiconductor device comprising: a semiconductor chip having a plurality of electrodes;a plurality of leads electrically connected to the plurality of electrodes of the semiconductor chip by bonding wires; anda resin for implementing the semiconductor chip, wherein the plurality of leads include a first lead group projecting from a first side of the semiconductor device, a second lead group adjacent to the first lead group and projecting from the first side, and a third lead group adjacent to the second lead group and projecting from the first side, and the second lead group has rigidity lower than those of the first lead group and the second lead group.

11. A semiconductor device comprising: a semiconductor chip having a plurality of electrodes;a plurality of leads electrically connected to the plurality of electrodes of the semiconductor chip by bonding wires; anda resin for implementing the semiconductor chip, wherein the plurality of leads include a first lead projecting from a first side of the semiconductor device, a second lead adjacent to the first lead and projecting from the first side, and a third lead adjacent to the second lead and projecting from the first side, and the second lead has rigidity lower than those of the first lead and the second lead.

12. A electronics device comprising: a wiring board; anda semiconductor device having a plurality of leads electrically connected to a plurality of electrodes of the wiring board, wherein the plurality of leads of the semiconductor device include a first lead having first rigidity and a second lead having second rigidity different from the first rigidity.

13. The electronics device according to claim 12, wherein a plurality of first leads are provided adjacent to each other, and a plurality of second leads are also provided adjacent to each other.

14. The electronics device according to claim 12, wherein the first lead is formed of material different from that of the second lead.

15. The electronics device according to claim 14, wherein the first lead is a Cu lead, and the second lead is a Alloy 42 lead.

16. The electronics device according to claim 12, wherein the first lead has a width different from that of the second lead.

17. The electronics device according to claim 12, wherein the first lead has a thickness different from that of the second lead.

18. The electronics device according to claim 17, wherein the first lead and the second lead are formed of the same material.

19. The electronics device according to claim 12, wherein the first lead is formed of the same material as that of the second lead and a surface thereof is provided with a metal film.

20. The electronics device according to claim 12, wherein a chip component having a plurality of leads is also installed on the wiring board, and the plurality of leads of the chip component include two or more kinds of leads having rigidity different from each other.