Patent Application
20240186160
One embodiment of the present invention relates to manufacturing equipment and a manufacturing method of a light-emitting device.
Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. One embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Accordingly, more specific examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting apparatus, a lighting device, a power storage device, a memory device, an image capturing device, an operation method thereof, and a manufacturing method thereof.
In recent years, higher-resolution display panels have been required. Examples of devices that require high-resolution display panels include a smartphone, a tablet terminal, and a laptop computer. Furthermore, higher resolution has been required for a stationary display device such as a television device or a monitor device along with an increase in definition. An example of a device required to have the highest resolution is a device for virtual reality (VR) or augmented reality (AR).
Examples of a display device that can be used for a display panel include, typically, a liquid crystal display device, a light-emitting apparatus including a light-emitting device such as an organic EL (Electro Luminescence) element or a light-emitting diode (LED), and electronic paper performing display by an electrophoretic method or the like.
For example, the basic structure of an organic EL element that is a light-emitting element is a structure where a layer containing a light-emitting organic compound is provided between a pair of electrodes. By voltage application to this element, light emission can be obtained from the light-emitting organic compound. A display device using such an organic EL element does not need a backlight that is necessary for a liquid crystal display device and the like; thus, a thin, lightweight, high-contrast, and low-power display device can be achieved. Patent Document 1, for example, discloses an example of a display device using an organic EL element.
As an organic EL display device capable of full-color display, a structure in which white-light-emitting devices and color filters are combined and a structure in which R (red), G (green), and B (blue) light-emitting devices are formed in the same plane are known.
The latter structure is ideal in terms of power consumption, and light-emitting materials are separately deposited using a metal mask or the like in manufacture of medium- and small-sized panels under the existing circumstances. However, the process using a metal mask has low alignment accuracy and needs a reduction in the area occupied by light-emitting devices in a pixel, resulting in difficulty in increasing an aperture ratio.
Therefore, an issue of the process using a metal mask is to increase the density of pixels and emission intensity. It is preferable to increase the area of a light-emitting device with the use of a lithography process or the like for increasing the aperture ratio. However, the reliability of a material included in the light-emitting device is lowered when impurities (e.g., water, oxygen, and hydrogen) in the air enter the material, necessitating performing a plurality of processes in a controlled atmosphere.
In the case where a light-emitting device is fabricated with a vacuum evaporation method using a metal mask, an issue such as necessity of a plurality of manufacturing equipment lines arises. For example, since a metal mask has to be cleaned regularly, at least two or more manufacturing equipment lines need to be prepared, and one manufacturing equipment needs to be used for fabrication while the other manufacturing equipment is being under maintenance. In consideration of mass production, a plurality of manufacturing equipment lines are required. Thus, the issue is that the initial investment for introducing manufacturing equipment significantly increases.
In view of this, an object of one embodiment of the present invention is to provide manufacturing equipment for a light-emitting device, in which processes from processing to sealing of an organic compound film can be successively performed without exposure to the air. Another object is to provide manufacturing equipment for a light-emitting device, in which processes from formation to sealing of a light-emitting device can be successively performed. Another object is to provide manufacturing equipment for a light-emitting device, in which a light-emitting device can be formed without using a metal mask. Another object is to provide a method for manufacturing a light-emitting device.
Note that the description of these objects does not preclude the existence of other objects. Note that one embodiment of the present invention does not have to achieve all these objects. Other objects will be apparent from and can be derived from the description of the specification, the drawings, the claims, and the like.
One embodiment of the present invention relates to manufacturing equipment for a light-emitting device.
One embodiment of the present invention is manufacturing equipment for a light-emitting device, which includes a load chamber, a first etching apparatus, a plasma treatment apparatus, a standby chamber, a first deposition apparatus, a second deposition apparatus, a second etching apparatus, an unload chamber, a transfer chamber, and a carrying device. The carrying device is provided in the transfer chamber. The load chamber, the first etching apparatus, the plasma treatment apparatus, the standby chamber, the first deposition apparatus, the second deposition apparatus, the second etching apparatus, and the unload chamber are each connected to the transfer chamber through a gate valve. The carrying device is capable of transferring an object to be processed from any one of the load chamber, the first etching apparatus, the plasma treatment apparatus, the standby chamber, the first deposition apparatus, the second deposition apparatus, the second etching apparatus, and the unload chamber to any one of the others. An object to be processed in which an organic compound film, a first inorganic film, and a resist mask are stacked sequentially over a glass substrate is carried into the load chamber. The object to be processed is carried to the first etching apparatus, the plasma treatment apparatus, the standby chamber, the first deposition apparatus, the second deposition apparatus, and the second etching apparatus in sequence. The organic compound film is processed into an island-shaped organic compound layer, a protective layer is formed on a side surface of the organic compound layer, and the object to be processed is carried out to the unload chamber.
The first etching apparatus is a dry etching apparatus in which the first inorganic film can be formed to have an island shape using the resist mask as a mask and the organic compound film can be processed into the island-shaped organic compound layer using the island-shaped first inorganic film as a mask.
The first etching apparatus can have an ashing function of removing the resist mask.
In the plasma treatment apparatus, a side surface of the island-shaped organic compound layer can be irradiated with plasma generated from an inert gas to perform cleaning on the side surface of the island-shaped organic compound layer.
The standby chamber is capable of storing a plurality of objects to be processed.
One of the first deposition apparatus and the second deposition apparatus is an ALD apparatus, the other of the first deposition apparatus and the second deposition apparatus is a sputtering apparatus or a CVD apparatus, and a second inorganic film with a two-layer structure that covers the island-shaped first inorganic film and the island-shaped organic compound layer can be deposited. The ALD apparatus can be of a batch processing type.
The second etching apparatus is a dry etching apparatus in which the protective layer can be formed on the side surface of the island-shaped organic compound layer by performing anisotropic etching on the second inorganic film.
Manufacturing equipment for a light-emitting device can be configured such that the above-described manufacturing equipment for a light-emitting device is a third cluster, a plurality of apparatuses in which a photolithography process with the resist mask is performed is a second cluster, and a plurality of apparatuses in which a deposition process of the organic compound film and the first inorganic film is performed is a first cluster.
The first cluster, the second cluster, and the third cluster can be connected in sequence.
An object to be processed stored in a container whose atmosphere is controlled to an inert gas atmosphere may be transferred between the first cluster and the second cluster and between the second cluster and the third cluster.
Three combinations of the first cluster, the second cluster, and the third cluster may be included in the manufacturing equipment for a light-emitting device.
The first cluster may include a surface treatment apparatus. The surface treatment apparatus can use plasma generated from a halogen-containing gas.
The first cluster can include one or more deposition apparatuses selected from an evaporation apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus.
The second cluster can include an application apparatus, a light exposure apparatus, a development apparatus, and a baking apparatus.
According to one embodiment of the present invention, manufacturing equipment for a light-emitting device, in which processes from processing to sealing of an organic compound film can be successively performed without exposure to the air can be provided. Alternatively, manufacturing equipment for a light-emitting device, in which processes from formation to sealing of a light-emitting device can be successively performed can be provided. Alternatively, manufacturing equipment for a light-emitting device, in which a light-emitting device can be formed without using a metal mask can be provided. Alternatively, a method for manufacturing a light-emitting device can be provided.
Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not need to have all of these effects. Note that effects other than these can be derived from the description of the specification, the drawings, the claims, and the like.
Embodiments will be described in detail with reference to the drawings. Note that the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that modes and details of the present invention can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of embodiments below. Note that in structures of the invention described below, the same reference numerals are used in common, in different drawings, for the same portions or portions having similar functions, and a repeated description thereof is omitted in some cases. Note that the hatching of the same component that constitutes a drawing is sometimes omitted or changed as appropriate in different drawings.
In this embodiment, manufacturing equipment for a light-emitting device that is one embodiment of the present invention is described with reference to drawings.
One embodiment of the present invention is manufacturing equipment mainly used for formation of a display device including a light-emitting device (also referred to as a light-emitting element) such as an organic EL element. It is preferable to use a lithography process in order to downscale the organic EL element or increase the area occupied by the organic EL element in a pixel. However, the reliability is impaired when impurities such as water, oxygen, and hydrogen enter the organic EL element. Therefore, it is necessary to take measures such that sealing is made to prevent the surface and side surface of a patterned organic layer from being exposed to the air and that the atmosphere is controlled to be an inert gas atmosphere with a low dew point from the manufacturing stage, for example.
With the manufacturing equipment of one embodiment of the present invention, a deposition step, a lithography step, an etching step, and a sealing step for forming an organic EL element can be successively performed without exposure to the air. Accordingly, a minute organic EL element with high luminance and high reliability can be formed. Moreover, the manufacturing equipment of one embodiment of the present invention can have an in-line system where apparatuses are arranged in the order of processes for the light-emitting device, resulting in high throughput manufacturing.
As a support substrate for forming an organic EL element, a large-sized substrate such as a glass substrate can be used. A glass substrate where a pixel circuit and the like are formed in advance is used as a support substrate, and an organic EL element can be formed over these circuits. As the glass substrate, for example, a large-sized rectangular substrate with a size of G5 to G10 can be used. Note that the glass substrate is not limited thereto and a round substrate, a small-sized substrate, and the like can also be used.
The manufacturing equipment includes a load chamber LD, an unload chamber ULD, a standby chamber W, a transfer chamber TF, and a plurality of treatment chambers. The transfer chamber TF is provided with a carrying device 70.
The load chamber LD, the standby chamber W, the unload chamber ULD, and the plurality of treatment chambers are each connected to the transfer chamber TF through a gate valve 20.
The carrying device 70 can transfer an object to be processed from any one of the load chamber LD, the standby chamber W, the unload chamber ULD and each individual treatment chamber to any one of the other chambers. In this specification, a group of apparatuses which shares a carrying device or the like is called a cluster. Furthermore, an object to be processed is a processing target object in the manufacturing equipment and is not limited to an object before being processed but includes an object on which a plurality of processing steps has been performed.
Note that the load chamber LD and the unload chamber ULD are controlled under reduced pressure or normal pressure during the operation of the manufacturing equipment. The transfer chamber TF, the standby chamber W, and the plurality of treatment chambers are controlled under reduced pressure.
As the plurality of treatment chambers, for example, an etching apparatus E1, a plasma treatment apparatus C, a deposition apparatus D, and an etching apparatus E2 can be used. The object to be processed, which is taken into the manufacturing equipment, can include a stacked body in which an organic compound film, an inorganic film, and a resist mask are stacked in this order, for example.
The etching apparatus E1 can be a dry etching apparatus. The etching apparatus E1 can be used in a process for processing an inorganic film and an organic compound film that are objects to be processed into an island-shaped organic compound layer. The etching apparatus E1 may have an ashing function. With the ashing function, a resist mask can be removed.
The plasma treatment apparatus C includes a pair of electrodes of a parallel-plate type, for example, and voltage is applied between the electrodes in an inert gas atmosphere under reduced pressure, whereby plasma can be generated. The object to be processed is irradiated with plasma generated from an inert gas, so that a reaction product, an absorbed gas, and the like remaining on the surface of the object to be processed can be removed. Examples of the inert gas to be used include a high-purity noble gas such as helium, argon, or neon, nitrogen, or a mixed gas thereof.
Either before or after the above plasma treatment, vacuum baking treatment is preferably performed in the same apparatus, thereby removing water absorbed on the surface. The vacuum baking is preferably performed within such a temperature range that the organic compound layer does not deteriorate, and for example, the temperature condition can be set to be higher than or equal to 70° C. and lower than or equal to 120° C., preferably higher than or equal to 80° C. and lower than or equal to 100° C. Note that the baking vacuum treatment may be performed in the deposition apparatus D before a deposition process that is the next process.
The standby chamber W can make a plurality of objects to be processed be in a standby state. For example, in the case where the deposition apparatus D has a batch processing system, the plurality of objects to be processed are made to be in a standby state in the standby chamber W while treatment in the etching apparatus E1 and treatment in the plasma treatment apparatus C are proceeded, whereby the throughput can be improved.
A plurality of the standby chambers W may be provided. For example, a standby chamber W where objects to be processed are made to be on standby after batch processing is finished in the deposition apparatus D may be provided. All the objects to be processed can be taken out from the deposition apparatus D, and thus next treatment can be performed in the deposition apparatus D, whereby the throughput can be improved.
As the deposition apparatus D, for example, a deposition apparatus such as an evaporation apparatus, a sputtering apparatus, a CVD (Chemical Vapor Deposition) apparatus, or an ALD (Atomic Layer Deposition) apparatus can be used. In particular, it is preferable to use an ALD apparatus, which provides good coverage. In the deposition apparatus D, a protective film such as an inorganic film covering the island-shaped organic compound layer can be formed. In the deposition apparatus D, not only a single layer but also two or more different kinds of layers can be formed. The deposition apparatus D may have a single-wafer processing system, not being limited to the batch processing system.
The etching apparatus E2 can be a dry etching apparatus capable of anisotropic etching treatment. The protective film covering the island-shaped organic compound layer is subjected to anisotropic etching, whereby part of the protective film can remain on the side surface of the island-shaped organic compound layer. The part of the protective film can function as a protective layer protecting the side surface of the island-shaped organic compound layer.
An inorganic film or the like is provided over the top surface of the island-shaped organic compound layer in advance and the protective layer is provided on the side surface of the island-shaped organic compound layer by successively performing treatment in the etching apparatus E1, the plasma treatment apparatus C, the deposition apparatus D, and the etching apparatus E2, whereby the island-shaped organic compound layer is in a sealed state.
Thus, the island-shaped organic compound layer is not exposed to the air when the object to be processed is taken out from the unload chamber to the air after processing; therefore, the formed light-emitting device can have high reliability. Note that details of the manufacturing processes of the light-emitting device using the manufacturing equipment will be described later.
The manufacturing equipment may have a structure illustrated in
The surface treatment apparatus S can have the same structure as the plasma treatment apparatus C and can perform a surface treatment process. The surface condition (e.g., wettability) of the object to be processed is sometimes changed depending on the treatment in the etching apparatus E2. In the case where the next process performed on the object to be processed carried out from the unload chamber ULD is deposition of an organic compound film, a defect such as peeling occurs in some cases unless the surface of the object to be processed is in an appropriate condition. Therefore, it is preferable to improve the surface condition of the object to be processed by plasma treatment with a halogen-containing gas in the surface treatment apparatus S.
For example, when a deposition surface is an oxide, the oxide surface is made to have an affinity for water in some cases owing to the treatment in the etching apparatus E1 or E2. In this case, a hydrophilic group in the deposition surface is substituted by fluorine or a fluoroalkyl group by plasma treatment using a fluorine-based gas, whereby the surface can have a hydrophobic property, and a peeling defect can be prevented. As the fluorine-based gas, for example, fluorocarbon such as CF4, C2F6, C4F6, C4F8, or CHF3, SF6, NF3, or the like can be used. In addition, helium, argon, hydrogen, or the like may be added to the above gas.
Alternatively, a coating apparatus may be used as the surface treatment apparatus S. For example, a method such as spin coating, dip coating, or spray coating, a method in which the object to be processed is exposed to an atmosphere of a coating agent, or the like can be used. As the coating agent, a silane coupling agent such as HMDS (Hexamethyldisilazane) can be used for example, whereby a surface of the object to be processed can be made to have a hydrophobic property.
Note that in the case where the surface treatment apparatus S is not needed, another apparatus may be provided in the position of the surface treatment apparatus S. For example, the number of apparatuses requiring a long treatment time among the etching apparatus E1, the plasma treatment apparatus C, the deposition apparatus D, and the etching apparatus E2 is set to be two or more, and treatment is performed in these apparatuses in parallel, whereby the throughput can be increased.
A plurality of deposition apparatuses D may be provided. In the deposition apparatus D included in the manufacturing equipment in
However, it is difficult to provide different types of deposition apparatuses such as an ALD apparatus and a sputtering apparatus in one chamber. Therefore, a plurality of deposition apparatuses D may be provided.
Alternatively, another process may be performed in another apparatus provided in the position of the surface treatment apparatus S. Note that the surface treatment apparatus S may be provided in the structure of
The manufacturing equipment may have a structure illustrated in
In the case where the process time of the deposition apparatus D cannot be a bottleneck for the throughput of the whole equipment, the standby chamber W can be omitted. For example, when the deposition apparatus D is of a single-wafer type and capable of high-speed deposition, the deposition apparatus D can have the structure illustrated in
A manufacturing equipment illustrated in
The clusters C1, C3, C5, C7, C9, C11, C13, C15, and C17 each include a group of apparatuses for performing a process under atmosphere control. The clusters C2, C4, C6, C8, C10, C12, C14, C16, and C18 each include a group of apparatuses for performing a vacuum process (process under reduced pressure). The cluster described in Structure Example 1 can be used as each of the clusters C4, C8, and C12. Note that the load chamber LD and the unload chamber ULD described in Structure Example 1 can be replaced with loadlock chambers appropriately.
The clusters C1, C5, and C9 include apparatuses mainly for cleaning and baking the substrate, and the like. The clusters C2, C6, and C10 include apparatuses mainly for forming an organic compound included in the light-emitting device and the like. The clusters C3, C7, C11, and C15 include apparatuses mainly for performing a lithography process and the like. The clusters C4, C8, C12, and C14 include apparatuses mainly for performing an etching process, an ashing process, and a protective layer formation process, and the like. The cluster C13 includes an apparatus for performing a filling process with a resin, and the like. The clusters C16 and C17 include apparatuses mainly for performing an etching process, and the like. The cluster C18 includes apparatuses mainly for forming an organic compound included in the light-emitting device and forming a protective film to seal the light-emitting device, and the like.
Next, the cluster C1 to the cluster C18 are described in detail with reference to
The cluster C1 and the cluster C3 each include normal-pressure process apparatuses A. The cluster C1 includes a transfer chamber TF1 and the normal-pressure process apparatuses A (normal-pressure process apparatuses A1 and A2) where a process is performed mainly under normal pressure. The cluster C3 includes a transfer chamber TF3 and the normal-pressure process apparatuses A (normal-pressure process apparatuses A3 to A7). Furthermore, a load chamber LD is provided in the cluster C1.
Note that the number of the normal-pressure process apparatuses A included in each of the clusters may be one or more depending on the purpose. Note that the normal-pressure process apparatus A is not limited to processes under normal pressure, and the pressure of the normal-pressure process apparatus A may be controlled to negative pressure or positive pressure that shifts slightly from the normal pressure. In the case where a plurality of normal-pressure process apparatuses A are provided, the pressures therein may be different from each other.
Valves for introducing an inert gas (IG) are connected to the transfer chambers TF1 and TF3 and the normal-pressure process apparatuses A, whereby the atmosphere therein can be controlled to an inert gas atmosphere. Examples of the inert gas that can be used include nitrogen and a noble gas such as argon or helium. In addition, the inert gas preferably has a low dew point (e.g., −50° C. or lower). When a process is performed under an atmosphere of an inert gas with a low dew point, entry of impurities can be prevented and a highly reliable light-emitting device can be formed.
As the normal-pressure process apparatuses A included in the cluster C1, a cleaning apparatus, a baking apparatus, and the like can be used. For example, a spin cleaning apparatus, a hot plate-type baking apparatus, and the like can be used. The baking apparatus may be a vacuum baking apparatus.
As the normal-pressure process apparatuses A included in the cluster C3, apparatuses for performing a lithography process can be used. For example, in the case where a photolithography process is performed, a resin (photoresist) application apparatus, a light-exposure apparatus, a development apparatus, a baking apparatus, and the like can be used; in the case where a nanoimprint lithography process is performed, a resin (e.g., a UV curable resin) application apparatus, a nanoimprint apparatus, and the like can be used. In addition, depending on the usage, a cleaning apparatus, a wet etching apparatus, an application apparatus, a resist peeling apparatus, and the like may be used as the normal-pressure process apparatuses A.
In the example of the cluster C1, the normal-pressure process apparatuses A1 and A2 are each connected to the transfer chamber TF1 through a gate valve. In the example of the cluster C3, the normal-pressure process apparatuses A3 to A7 are each connected to the transfer chamber TF3 through a gate valve. Providing the gate valve makes it possible to control atmospheric pressure, control the kind of an inert gas, and prevent cross contamination, for example.
The transfer chamber TF1 is connected to the load chamber LD through a gate valve. The transfer chamber TF1 is also connected to the loadlock chamber B1 through another gate valve. The transfer chamber TF1 is provided with a carrying device 70a. The carrying device 70a can carry the substrate from the load chamber LD to the normal-pressure process apparatus A. In addition, the carrying device 70a can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B1.
The transfer chamber TF3 is connected to the loadlock chamber B2 through a gate valve. The transfer chamber TF3 is also connected to the loadlock chamber B3 through another gate valve. The transfer chamber TF3 is provided with a carrying device 70c. The carrying device 70c can carry the substrate from the loadlock chamber B2 to the normal-pressure process apparatus A. In addition, the carrying device 70c can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B3.
The cluster C2 and the cluster C4 include vacuum process apparatuses V. The cluster C2 includes a transfer chamber TF2 and the vacuum process apparatuses V (vacuum process apparatuses V1 to V5). The cluster C4 includes a transfer chamber TF4 and the vacuum process apparatuses V (vacuum process apparatuses V6 to V10).
Note that the number of vacuum process apparatuses V included in each of the clusters is one or more depending on the purpose. A vacuum pump VP is connected to each vacuum process apparatus V, and a gate valve is provided between each vacuum process apparatus V and the transfer chamber TF (transfer chambers TF2 and TF4). Thus, different processes can be performed in parallel in the vacuum process apparatuses V.
Note that the vacuum process means treatment in an environment where the pressure is controlled to reduced pressure. Thus, the vacuum process includes treatment for performing pressure control under reduced pressure with introduction of a process gas, besides treatment under high vacuum.
The transfer chambers TF2 and TF4 are also provided with an independent vacuum pump VP, so that cross contamination during processes performed in the vacuum process apparatuses V can be prevented.
As the vacuum process apparatuses V included in the cluster C2, for example, a surface treatment apparatus and deposition apparatuses such as an evaporation apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus can be used. Note that the surface treatment apparatus can have the function of the surface treatment apparatus S described with reference to
As the CVD apparatus, a thermal CVD apparatus using heat, a PECVD apparatus (Plasma Enhanced CVD apparatus) using plasma, or the like can be used. As the ALD apparatus, a thermal ALD apparatus using heat, a PEALD apparatus (Plasma Enhanced ALD apparatus) using a plasma-excited reactant, or the like can be used.
As the vacuum process apparatuses V included in the cluster C4, the apparatuses described in Structure Example 1, e.g., a dry etching apparatus (having an ashing function), a plasma treatment apparatus (cleaning), an ALD apparatus, and a dry etching apparatus can be used. In addition, the standby chamber W illustrated in
Note that in this embodiment, an apparatus in which a substrate is placed with a deposition surface facing downward is referred to as a face-down apparatus. In contrast, an apparatus in which a substrate is placed with a deposition surface facing upward is referred to as a face-up apparatus. Examples of the face-down apparatus include a deposition apparatus such as an evaporation apparatus or a sputtering apparatus. Examples of the face-up apparatus include a deposition apparatus such as a CVD apparatus or an ALD apparatus, a dry etching apparatus, an ashing apparatus, a baking apparatus, and an apparatus involving lithography. Note that the manufacturing equipment in this embodiment includes any of apparatuses other than the above in some cases. For example, a face-up sputtering apparatus can also be used.
The transfer chamber TF2 is connected to the loadlock chamber B1 through a gate valve. The transfer chamber TF2 is also connected to the loadlock chamber B2 through another gate valve. The transfer chamber TF2 is provided with a carrying device 70b. The carrying device 70b can carry the substrate placed in the loadlock chamber B1 to the vacuum process apparatus V. In addition, the carrying device 70b can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B2.
The transfer chamber TF4 is connected to the loadlock chamber B3 through a gate valve. The transfer chamber TF4 is also connected to the loadlock chamber B4 through another gate valve. The transfer chamber TF4 is provided with a carrying device 70d. With the carrying device 70d, the substrate can be carried from the loadlock chamber B3 into the vacuum process apparatus V and carried out to the loadlock chamber B4.
The loadlock chambers B1, B2, B3, and B4 are each provided with the vacuum pump VP and a valve for introducing an inert gas (IG). Thus, the loadlock chambers B1, B2, B3, and B4 can be controlled so as to be under reduced pressure or an inert gas atmosphere. For example, in the case where the substrate is carried from the cluster C2 to the cluster C3, operation can be performed in a such a manner that the substrate is carried from the cluster C2 into the loadlock chamber B2 with reduced pressure, and the substrate is carried out to the cluster C3 after the atmosphere in the loadlock chamber B2 is changed to an inert gas atmosphere.
Note that the carrying devices 70a, 70b, 70c, and 70d each have a mechanism for carrying the substrate placed on a hand portion. The hand portion may be provided with a vacuum adsorption mechanism or the like because the carrying devices 70a and 70c work under a normal pressure. The hand portion may be provided with an electrostatic adsorption mechanism or the like because the carrying devices 70b and 70d work under a reduced pressure.
Stages 80a, 80b, 80c, and 80d where a substrate can be placed on pins are provided in the loadlock chambers B1, B2, B3, and B4, respectively. Note that these stages are just examples and a stage with another structure may be employed.
The basic structures of the cluster C5 to the cluster C8 are similar to those of the cluster C1 to the cluster C4: the cluster C5 corresponds to the cluster C1, the cluster C6 corresponds to the cluster C2, the cluster C7 corresponds to the cluster C3, and the cluster C8 corresponds to the cluster C4. Note that the load chamber LD in the cluster C1 is replaced with the loadlock chamber B4 in the cluster C5.
In addition, the loadlock chamber B5 corresponds to the loadlock chamber B1, the loadlock chamber B6 corresponds to the loadlock chamber B2, the loadlock chamber B7 corresponds to the loadlock chamber B3, and the loadlock chamber B8 corresponds to the loadlock chamber B4.
For details of the clusters and the loadlock chambers whose structures only are described below, description of the cluster C1 to the cluster C4 and the loadlock chambers B1 to B4 can be referred to.
The cluster C5 and the cluster C7 include normal-pressure process apparatuses A. The cluster C5 includes a transfer chamber TF5 and the normal-pressure process apparatuses A (normal-pressure process apparatuses A8 and A9) where a process is performed mainly under normal pressure. The cluster C7 includes a transfer chamber TF7 and the normal-pressure process apparatuses A (normal-pressure process apparatuses A10 to A14).
The cluster C6 and the cluster C8 include the vacuum process apparatuses V. The cluster C6 includes a transfer chamber TF6 and the vacuum process apparatuses V (vacuum process apparatuses V11 to V15). The cluster C8 includes a transfer chamber TF8 and the vacuum process apparatuses V (vacuum process apparatuses V16 to V20).
The transfer chamber TF5 is connected to the loadlock chamber B4 through a gate valve. The transfer chamber TF5 is also connected to the loadlock chamber B5 through another gate valve. The transfer chamber TF5 is provided with a carrying device 70e. The carrying device 70e can carry the substrate into the normal-pressure process apparatus A from the loadlock chamber B4. In addition, the carrying device 70e can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B5.
The transfer chamber TF6 is connected to the loadlock chamber B5 through a gate valve. The transfer chamber TF6 is also connected to the loadlock chamber B6 through another gate valve. The transfer chamber TF6 is provided with a carrying device 70f. The carrying device 70f can carry the substrate placed in the loadlock chamber B5 into the vacuum process apparatus V. The carrying device 70f can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B6.
The transfer chamber TF7 is connected to the loadlock chamber B6 through a gate valve. The transfer chamber TF7 is also connected to the loadlock chamber B7 through another gate valve. The transfer chamber TF7 is provided with a carrying device 70g. The carrying device 70g can carry the substrate into the normal-pressure process apparatus A from the loadlock chamber B6. The carrying device 70g can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B7.
The transfer chamber TF8 is connected to the loadlock chamber B7 through a gate valve. The transfer chamber TF8 is also connected to the loadlock chamber B8 through another gate valve. The transfer chamber TF8 is provided with a carrying device 70h. The carrying device 70h can carry the substrate from the loadlock chamber B7 into the vacuum process apparatus V. The carrying device 70h can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B8.
Stages 80e, 80f, 80g, and 80h where a substrate can be placed on pins are provided in the loadlock chambers B5, B6, B7, and B8, respectively.
The basic structures of the cluster C9 to the cluster C12 are similar to those of the cluster C1 to the cluster C4: the cluster C9 corresponds to the cluster C1, the cluster C10 corresponds to the cluster C2, the cluster C11 corresponds to the cluster C3, and the cluster C12 corresponds to the cluster C4. Note that the load chamber LD in the cluster C1 is replaced with the loadlock chamber B8 in the cluster C9. The vacuum process apparatus V10 in the cluster C4 is not provided in the cluster C12.
In addition, the loadlock chamber B9 corresponds to the loadlock chamber B1, the loadlock chamber B10 corresponds to the loadlock chamber B2, the loadlock chamber B11 corresponds to the loadlock chamber B3, and the loadlock chamber B12 corresponds to the loadlock chamber B4.
Structures only will be described below. For details of the clusters and the loadlock chambers, description of the cluster C1 to the cluster C4 and the loadlock chambers B1 to B4 can be referred to.
The cluster C9 and the cluster C11 include normal-pressure process apparatuses A. The cluster C9 includes a transfer chamber TF9 and the normal-pressure process apparatuses A (normal-pressure process apparatuses A15 and A16) where a process is performed mainly under normal pressure. The cluster C11 includes a transfer chamber TF11 and the normal-pressure process apparatuses A (normal-pressure process apparatuses A17 to A21).
The cluster C10 and the cluster C12 include the vacuum process apparatuses V. The cluster C10 includes a transfer chamber TF10 and the vacuum process apparatuses V (vacuum process apparatuses V21 to V25). The cluster C12 includes a transfer chamber TF12 and the vacuum process apparatuses V (vacuum process apparatuses V26 to V29).
The transfer chamber TF9 is connected to the loadlock chamber B8 through a gate valve. The transfer chamber TF9 is also connected to the loadlock chamber B9 through another gate valve. The transfer chamber TF9 is provided with a carrying device 70i. The carrying device 70i can carry the substrate into the normal-pressure process apparatus A from the loadlock chamber B8. The carrying device 70i can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B9.
The transfer chamber TF10 is connected to the loadlock chamber B9 through a gate valve. The transfer chamber TF10 is also connected to the loadlock chamber B10 through another gate valve. The transfer chamber TF10 is provided with a carrying device 70j. The carrying device 70j can carry the substrate placed in the loadlock chamber B9 into the vacuum process apparatus V. The carrying device 70j can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B10.
The transfer chamber TF11 is connected to the loadlock chamber B10 through a gate valve. The transfer chamber TF11 is also connected to the loadlock chamber B11 through another gate valve. The transfer chamber TF11 is provided with a carrying device 70k. The carrying device 70k can carry the substrate into the normal-pressure process apparatus A from the loadlock chamber B10. The carrying device 70k can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B11.
The transfer chamber TF12 is connected to the loadlock chamber B11 through a gate valve. The transfer chamber TF12 is also connected to the loadlock chamber B12 through another gate valve. The transfer chamber TF12 is provided with a carrying device 70m. With the carrying device 70m, the substrate can be carried from the loadlock chamber B11 into the vacuum process apparatus V and carried out to the loadlock chamber B12.
Stages 80i, 80j, 80k, and 80m where a substrate can be placed on pins are provided in the loadlock chambers B9, B10, B11, and B12, respectively.
The cluster C13 and the cluster C15 include normal-pressure process apparatuses A. The cluster C13 includes a transfer chamber TF13 and the normal-pressure process apparatuses A (normal-pressure process apparatuses A22 to A26) where a process is performed mainly under a normal pressure. The cluster C15 includes a transfer chamber TF15 and the normal-pressure process apparatuses A (normal-pressure process apparatuses A27 to A31) where a process is performed mainly under normal pressure.
As the normal-pressure process apparatuses A included in the cluster C13, apparatuses for performing a lithography process, which are similar to those in the cluster C3, can be used. In the apparatuses for performing a lithography process, filling treatment with a resin can be performed.
The transfer chamber TF13 is connected to the loadlock chamber B12 through a gate valve. The transfer chamber TF13 is also connected to the loadlock chamber B13 through another gate valve. The transfer chamber TF13 is provided with a carrying device 70n. The carrying device 70n can carry the substrate into the normal-pressure process apparatus A from the loadlock chamber B12. In addition, the carrying device 70n can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B13.
The basic structure of the cluster C15 is similar to that of the cluster C3. The transfer chamber TF15 is connected to the loadlock chamber B14 through a gate valve. The transfer chamber TF15 is also connected to the loadlock chamber B15 through another gate valve. The transfer chamber TF15 is provided with a carrying device 70q. The carrying device 70q can carry the substrate from the loadlock chamber B14 to the normal-pressure process apparatus A. The carrying device 70q can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B15.
The cluster C14 and the cluster C16 include vacuum process apparatuses V. The cluster C14 includes a transfer chamber TF14 and the vacuum process apparatuses V (vacuum process apparatuses V30 and V31). The cluster C16 includes a transfer chamber TF16 and the vacuum process apparatus V (vacuum process apparatus V32).
As the vacuum process apparatuses V included in the cluster C14, for example, an ashing apparatus, a dry etching apparatus (having an ashing function), an ALD apparatus, a CVD apparatus, a sputtering apparatus, and the like can be used.
The transfer chamber TF14 is connected to the loadlock chamber B13 through a gate valve. The transfer chamber TF14 is also connected to the loadlock chamber B14 through another gate valve. The transfer chamber TF14 is provided with the carrying device 70p. The carrying device 70p can carry the substrate from the loadlock chamber B13 into the vacuum process apparatus V. The carrying device 70p can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B14.
As the vacuum process apparatus V included in the cluster C16, for example, a dry etching apparatus can be used.
The transfer chamber TF16 is connected to the loadlock chamber B15 through a gate valve. The transfer chamber TF16 is also connected to the loadlock chamber B16 through another gate valve. The transfer chamber TF16 is provided with a carrying device 70r. The carrying device 70r can carry the substrate from the loadlock chamber B15 to the vacuum process apparatus V. The carrying device 70r can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B16.
Stages 80n, 80p, 80q, and 80r, where the substrate can be placed on pins are provided in the loadlock chambers B13 to the B16, respectively. The loadlock chambers B13 to B16 are each provided with the vacuum pump VP and a valve for introducing an inert gas (IG). Thus, the loadlock chambers B13 to the B16 can be controlled so as to be under reduced pressure or an inert gas atmosphere.
The cluster C17 includes normal-pressure process apparatuses A. The cluster C17 includes a transfer chamber TF17 and the normal-pressure process apparatuses A (normal-pressure process apparatuses A32 and A33) where a process is performed mainly under a normal pressure.
As the normal-pressure process apparatuses A included in the cluster C17, an etching apparatus and a baking apparatus can be used. As the etching apparatus, a wet etching apparatus can be used. Although a dry etching apparatus can be employed, the cluster C17 can be omitted in that case because the treatment can be performed in the cluster C16. Note that when a dry etching apparatus is used, it is preferable to lower or eliminate a bias toward the substrate side to enable isotropic etching treatment.
The transfer chamber TF17 is connected to the loadlock chamber B16 through a gate valve. The transfer chamber TF17 is also connected to the loadlock chamber B17 through another gate valve. The transfer chamber TF17 is provided with a carrying device 70s. The carrying device 70s can carry the substrate from the loadlock chamber B16 to the normal-pressure process apparatus A. The carrying device 70s can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B17.
The cluster C18 includes the vacuum process apparatuses V. The cluster C18 includes a transfer chamber TF18 and the vacuum process apparatuses V (vacuum process apparatuses V33 to V35) where a process is performed mainly under reduced pressure.
As the vacuum apparatuses V included in the cluster C18, for example, deposition apparatuses such as an evaporation apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus, an apparatus for attaching a counter substrate to a substrate can be employed.
The transfer chamber TF18 is connected to the loadlock chamber B17 through a gate valve. The transfer chamber TF18 is also connected to the unload chamber ULD through another gate valve. The transfer chamber TF18 is provided with a carrying device 71t. The carrying device 71t can carry the substrate from the loadlock chamber B17 to the vacuum process apparatus V. The carrying device 71t can carry out the substrate taken from the vacuum process apparatus V into the unload chamber ULD.
The loadlock chamber B17 is provided with a stage 80s where a substrate can be placed on pins. In addition, the loadlock chamber B17 is provided with the vacuum pump VP and a valve for introducing an inert gas (IG). Thus, the loadlock chamber B17 can be controlled so as to be under reduced pressure or an inert gas atmosphere.
With use of the manufacturing equipment having the above structure, highly reliable light-emitting device sealed with a protective film can be formed.
For example, the following processes can be performed successively in the equipment with a controlled atmosphere: forming a light-emitting device emitting light of a first color in the clusters C1 to C4; forming a light-emitting device emitting light of a second color in the clusters C5 to C8; forming a light-emitting device emitting light of a third color in the clusters C9 to C12; filling with an insulator in the cluster C13, removing an unnecessary element in the clusters C14 to C17; and forming a protective film and the like in the cluster C18. Details of these processes are described later.
Note that in the case where light-emitting devices emitting white light are formed and provided with coloring layers such as color filters to form light-emitting devices emitting light of the first to third colors, a structure where the clusters C1, C2, C3, C4, C13, C14, C15, C16, C17, and C18 are connected in sequence can be employed.
In the manufacturing equipment illustrated in
The structures of the cluster C1 to cluster C4 can be similar to those illustrated in
The connections between the clusters are described below. For the details of the clusters and the loadlock chambers, the description of the clusters C6, C7, C8, and C10 and the loadlock chambers B4, B6, B7, B9, and B10 can be referred to.
The transfer chamber TF6 included in the cluster C6 is connected to the loadlock chamber B4 through a gate valve. The transfer chamber TF6 is also connected to the loadlock chamber B6 through another gate valve. The transfer chamber TF6 is provided with the carrying device 70f. The carrying device 70f can carry the substrate placed in the loadlock chamber B4 into the vacuum process apparatus V. The carrying device 70f can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B6.
The transfer chamber TF7 included in the cluster C7 is connected to the loadlock chamber B6 through a gate valve. The transfer chamber TF7 is also connected to the loadlock chamber B7 through another gate valve. The transfer chamber TF7 is provided with the carrying device 70g. The carrying device 70g can carry the substrate into the normal-pressure process apparatus A from the loadlock chamber B6. The carrying device 70g can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B7.
The transfer chamber TF8 included in the cluster C8 is connected to the loadlock chamber B7 through a gate valve. The transfer chamber TF8 is also connected to the loadlock chamber B9 through another gate valve. The transfer chamber TF8 is provided with the carrying device 70h. The carrying device 70h can carry the substrate from the loadlock chamber B7 into the vacuum process apparatus V. The carrying device 70h can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B9.
The transfer chamber TF10 included in the cluster C10 is connected to the loadlock chamber B9 through a gate valve. The transfer chamber TF10 is also connected to the loadlock chamber B10 through another gate valve. The transfer chamber TF10 is provided with the carrying device 70j. The carrying device 70j can carry the substrate placed in the loadlock chamber B9 into the vacuum process apparatus V. The carrying device 70j can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B10.
The connections between the clusters are described below. For the details of the clusters and the loadlock chambers, the description of the clusters C11, C12, C13, and C14 and the loadlock chambers B11, B12, and B13 can be referred to.
The transfer chamber TF11 included in the cluster C11 is connected to the loadlock chamber B10 through a gate valve. The transfer chamber TF11 is also connected to the loadlock chamber B11 through another gate valve. The transfer chamber TF11 is provided with the carrying device 70k. The carrying device 70k can carry the substrate into the normal-pressure process apparatus A from the loadlock chamber B10. The carrying device 70k can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B11.
The transfer chamber TF12 included in the cluster C12 is connected to the loadlock chamber B11 through a gate valve. The transfer chamber TF12 is also connected to the loadlock chamber B12 through another gate valve. The transfer chamber TF12 is provided with the carrying device 70m. The carrying device 70m can carry the substrate from the loadlock chamber B11 into the vacuum process apparatus V. The carrying device 70m can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B12.
The transfer chamber TF13 included in the cluster C13 is connected to the loadlock chamber B12 through a gate valve. The transfer chamber TF13 is also connected to the loadlock chamber B13 through another gate valve. The transfer chamber TF13 is provided with the carrying device 70n. The carrying device 70n can carry the substrate into the normal-pressure process apparatus A from the loadlock chamber B12. In addition, the carrying device 70n can carry out the substrate taken from the normal-pressure process apparatus A into the loadlock chamber B13.
The transfer chamber TF14 included in the cluster C14 is connected to the loadlock chamber B13 through a gate valve. The transfer chamber TF14 is also connected to the loadlock chamber B14 through another gate valve. The transfer chamber TF13 is provided with the carrying device 70p. The carrying device 70p can carry the substrate from the loadlock chamber B13 into the vacuum process apparatus V. The carrying device 70p can carry out the substrate taken from the vacuum process apparatus V into the loadlock chamber B14.
The structures of the cluster C15 to cluster C18 can be similar to those illustrated in
Although Structure Example 1 to Structure Example 3 each show the example of manufacturing equipment with an in-line system where the clusters are connected through the loadlock chambers, a structure in which each cluster independently includes a load chamber LD and an unload chamber ULD may be employed.
In such a structure, the object to be processed is preferably put and sealed in a container where an atmosphere is controlled so as not to be exposed to the air, and the container is moved between the clusters.
First, the atmosphere of the unload chamber ULD is replaced with an inert gas atmosphere while all objects to be processed are contained in the cassette CT placed in the unload chamber ULD. In addition, the atmosphere inside the transport container BX provided on a transport vehicle VE is replaced with an inert gas atmosphere. At this time, it is preferable that the unload chamber ULD and the transport container BX be set in a positive pressure state so that the atmospheric air does not flow therein. The structure preferable for the transport container BX is such that the atmospheric air does not flow therein, and the transport container BX may be evacuated to vacuum to be in a negative pressure.
Next, the carry-out port of the unload chamber ULD and the carry-in/out port of the transport container BX are connected, and the cassette CT is transferred with a transfer device 200 from the unload chamber ULD to the transport container BX. Then, the carry-in/out port of the transport container BX is closed so that the inside of the transport container BX is kept having the inert gas atmosphere, and in this state, the transport container BX is moved to the cluster C2 with the transport vehicle VE.
First, the atmosphere in the load chamber LD is replaced with an inert gas atmosphere. Next, the carry-in/out port of the transport container BX and the carry-in port of the load chamber LD are connected, and the cassette CT is transferred with a transfer device 209 from the transport container BX to the load chamber LD. Then, the carry-in port of the load chamber UL is closed, and treatment in the cluster C2 starts.
The transport container BX includes an inlet 210 and an outlet 211 for a gas, and the inlet 210 is connected to the gas cylinder 205 through a valve 206. The outlet 211 is connected to a valve 207. One or both of the valve 206 and the valve 207 are conductance valves, which enable the inside of the transport container BX to be controlled to have a positive pressure with an inert gas. Nitrogen, argon, or the like is preferably used as the inert gas.
Furthermore, the transport container BX includes a carry-in/out port 208 and the transfer device 209. There is no limitation on the form of the carry-in/out port 208; for example, a door, a shutter, or the like can be employed.
The transfer device 209 can transfer the cassette CT. Note that in the description of
Although the clusters C1 to C4 are described above as the examples, the independent cluster structure is applicable to the clusters C5 to C18. Furthermore, Structure Example 4 can be combined with part of Structure Example 1 to Structure Example 3.
The deposition apparatus 30 includes a deposition material supply unit 31, a mask unit 32, and a stage 50 where a substrate 60 is to be set. The deposition material supply unit 31 is provided with, for example, an evaporation source when the deposition apparatus 30 is an evaporation apparatus. Alternatively, the deposition material supply unit 31 is provided with a target (cathode) when the deposition apparatus 30 is a sputtering apparatus.
The pusher pins 41 are inserted into through holes 42 formed in the electromagnet unit 34 and the electrostatic adsorption unit 35. The operation of the cylinders 40 allows tips of the pusher pins 41 to touch the substrate 60 so as to move up and down the substrate 60.
Note that one pusher pin 41 is connected to one cylinder 40 in the structure illustrated in
The electromagnet unit 34 can generate magnetic force when receiving power and has a function of closely attaching a mask jig described later to the substrate 60. Note that the mask jig is preferably formed using a ferromagnetic material such as stainless steel.
The electrostatic adsorption unit 35 has the following function: voltage is applied to the substrate 60 from an internal electrode of the electrostatic adsorption unit 35, so that electric charge in the electrostatic adsorption unit 35 and electric charge in the substrate 60 attract each other to cause adsorption. Thus, unlike vacuum adsorption mechanism, the electrostatic adsorption unit 35 can adsorb the substrate even in vacuum. It is preferable that the electrostatic adsorption unit be formed using dielectric ceramic or the like and not contain a ferromagnetic body.
Rotation mechanisms 36 such as motors are connected to a first edge surface of the stage 50 and a second edge surface facing the first edge surface, allowing the stage 50 to be reversed upside down. Here, the combination of the stage 50 and the rotation mechanisms 36 can be referred to as a substrate reversing device.
As illustrated in
Next, steps from transferring of the substrate to the deposition apparatus 30 to deposition are described with reference to
First, with the electrostatic adsorption unit 35 of the stage 50 facing upward, the substrate 60 placed over the hand portion of the carrying device 70 is moved above the electrostatic adsorption unit 35. Then, the substrate 60 is raised by the pusher pins 41. Alternatively, the hand portion of the carrying device 70 is lowered to place the substrate 60 over the raised pusher pins 41 (see
Next, the pusher pins 41 are lowered so that the substrate 60 is placed over the electrostatic adsorption unit 35, and the electrostatic adsorption unit 35 is operated to adsorb the substrate 60 (see
Next, the stage 50 is rotated by the rotation mechanisms 36, and the substrate 60 is reversed upside down (see
Then, the mask unit 32 is raised by the lifting mechanisms 37, and the mask jig is aligned to touch the substrate 60. After that, power is applied to the electromagnet unit 34, whereby the mask jig is closely attached to the substrate 60 (see
After the deposition step is performed in the state illustrated in
The substrate reversing device only needs to be provided in a deposition apparatus (face-down deposition apparatus) that requires the substrate to be reversed upside down. Thus, there is no need to provide a substrate reversing mechanism in a substrate carrying device or a loadlock chamber, resulting in a reduction in the costs of the whole device. This is particularly effective in manufacturing equipment like the manufacturing equipment of one embodiment of the present invention, which includes both a face-down apparatus (a deposition apparatus) and a face-up apparatus (e.g., a deposition apparatus and a lithography apparatus).
This embodiment can be implemented in an appropriate combination with the structures described in the other embodiment.
In this embodiment, specific examples of an organic EL element that can be manufactured with the use of the manufacturing equipment for a light-emitting device of one embodiment of the present invention will be described.
In this specification and the like, a device formed using a metal mask or an FMM (fine metal mask, high-resolution metal mask) is sometimes referred to as a device having an MM (metal mask) structure. In this specification and the like, a device formed without using a metal mask or an FMM may be referred to as a device having a metal maskless (MML) structure.
In this specification and the like, a structure in which light-emitting layers in light-emitting devices of different colors (here, blue (B), green (G), and red (R)) are separately formed or separately patterned may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device capable of emitting white light may be referred to as a white-light-emitting device. Note that a combination of white-light-emitting devices with coloring layers (e.g., color filters) enables a full-color display device.
Light-emitting devices can be classified roughly into a single structure and a tandem structure. A device having a single structure includes one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, two light-emitting layers are selected such that emission colors of the light-emitting layers are complementary colors. For example, when an emission color of a first light-emitting layer and an emission color of a second light-emitting layer are complementary colors, the light-emitting device can be configured to emit white light as a whole. The same applies to a light-emitting device including three or more light-emitting layers.
A device having a tandem structure includes a pair of electrodes and two or more light-emitting units between the pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, the structure is made so that light from light-emitting layers of the light-emitting units can be combined to be white light. Note that a structure for obtaining white light emission is similar to that in the case of a single structure. In the device having a tandem structure, it is suitable that an intermediate layer such as a charge-generation layer is provided between a plurality of light-emitting units.
When the above white-light-emitting device (having a single structure or a tandem structure) and the above light-emitting device having an SBS structure are compared to each other, the light-emitting device having an SBS structure can have lower power consumption than the white-light-emitting device. To reduce power consumption, a light-emitting device having an SBS structure is suitably used. Meanwhile, the white-light-emitting device is preferable in terms of lower manufacturing cost or higher manufacturing yield because the manufacturing process of the white-light-emitting device is simpler than that of a light-emitting device having an SBS structure.
The device with a tandem structure may include light-emitting layers emitting light of the same color (e.g., BB, GG, or RR). The tandem structure emitting light from a plurality of layers requires high voltage for light emission but achieves the same emission intensity as a single structure with a smaller current value. Thus, with the tandem structure, current stress on each light-emitting unit can be reduced and the element lifetime can be extended.
The light-emitting devices 110R, the light-emitting devices 110G, and the light-emitting devices 110B are arranged in a matrix.
As the light-emitting devices 110R, the light-emitting devices 110G, and the light-emitting devices 110B, EL elements such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes) are preferably used. As examples of a light-emitting substance contained in the EL element, a substance that emits fluorescent light (a fluorescent material), a substance that emits phosphorescent light (a phosphorescent material), an inorganic compound (e.g., a quantum dot material), a substance exhibiting thermally activated delayed fluorescence (a thermally activated delayed fluorescence (TADF) material), and the like can be given.
The light-emitting device 110R includes an EL layer 112R between the pixel electrode 111 and the common electrode 113. The EL layer 112R contains at least a light-emitting organic compound that emits light having a peak in the red wavelength range. An EL layer 112G included in the light-emitting device 110G contains at least a light-emitting organic compound that emits light having a peak in the green wavelength range. An EL layer 112B included in the light-emitting device 110B contains at least a light-emitting organic compound that emits light having a peak in the blue wavelength range. Note that a structure in which the EL layer 112R, the EL layer 112G, and the EL layer 112B emit light of different colors may be referred to as an SBS structure.
The EL layer 112R, the EL layer 112G, and the EL layer 112B may each include one or more of an electron-injection layer, an electron-transport layer, a hole-injection layer, and a hole-transport layer in addition to the layer containing a light-emitting organic compound (light-emitting layer).
The pixel electrode 111 is provided in each of the light-emitting devices. The common electrode 113 is provided as a continuous layer shared by the light-emitting devices. A conductive film with a property of transmitting visible light is used for either one of the pixel electrode 111 and the common electrode 113, and a conductive film with a property of reflecting visible light is used for the other. When the pixel electrodes 111 are light-transmitting electrodes and the common electrode 113 is a reflective electrode, a bottom-emission display device can be obtained; in contrast, when the pixel electrodes 111 are reflective electrodes and the common electrode 113 is a light-transmitting electrode, a top-emission display device can be obtained. Note that when both the pixel electrode 111 and the common electrode 113 have a light-transmitting property, the display device can have a dual emission structure. In this embodiment, an example of manufacturing a top-emission display device is described.
The EL layer 112R, the EL layer 112G, and the EL layer 112B each include a region in contact with the top surface of the pixel electrode 111.
As illustrated in
A protective layer 121 is provided over the common electrode 113 to cover the light-emitting device 110R, the light-emitting device 110G, and the light-emitting device 110B. The protective layer 121 has a function of preventing diffusion of impurities into the light-emitting devices from above. Alternatively, the protective layer 121 has a function of capturing (also called gettering) impurities (such as water and hydrogen typically) that may enter the light-emitting devices.
The protective layer 121 can have, for example, a single-layer structure or a stacked-layer structure at least including an inorganic insulating film. Examples of the inorganic insulating film include an oxide film and a nitride film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, a semiconductor material such as an indium gallium oxide or an indium gallium zinc oxide may be used for the protective layer 121.
The pixel electrode 111 is electrically connected to one of a source and a drain of a transistor 116. A transistor including a metal oxide in a channel formation region (hereinafter, an OS transistor) can be used as the transistor 116, for example. The OS transistor has higher mobility than amorphous silicon and has excellent electrical characteristics. In addition, crystallization needed in the manufacturing process using polycrystalline silicon is not necessary for the OS transistor, and the OS transistor can be fabricated in the back end of line or the like. Therefore, the OS transistor can be formed over a transistor 115 using silicon in a channel formation region formed with the substrate 60 (hereinafter, such a transistor is referred to as Si transistor) without a bonding step or the like.
Here, the transistor 116 is included in a pixel circuit. The transistor 115 is included in a driver circuit for the pixel circuit or the like. In other words, the pixel circuit can be formed over the driver circuit, which enables formation of a display device with a narrow bezel.
As a semiconductor material used for an OS transistor, a metal oxide whose energy gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, further preferably greater than or equal to 3 eV can be used.
In an OS transistor, a semiconductor layer has a large energy gap, and thus the OS transistor has an extremely low off-state current of several yoctoamperes per micrometer (current per micrometer of a channel width). The off-state current value per micrometer of channel width of the OS transistor at room temperature can be lower than or equal to 1 aA (1×10−18 A), lower than or equal to 1 zA (1×10−21 A), or lower than or equal to 1 yA (1×10−24 A). Note that the off-state current value per micrometer of channel width of a Si transistor at room temperature is higher than or equal to 1 fA (1×10−15 A) and lower than or equal to 1 pA (1×10−12 A). In other words, the off-state current of an OS transistor is lower than that of a Si transistor by approximately ten orders of magnitude.
An OS transistor has features such that impact ionization, an avalanche breakdown, a short-channel effect, or the like does not occur, which are different from those of a Si transistor. Thus, the use of an OS transistor enables formation of a circuit having high withstand voltage and high reliability. Moreover, variation in electrical characteristics due to crystallinity unevenness, which is caused in Si transistors, is less likely to occur in OS transistors.
A semiconductor layer in an OS transistor can be, for example, a film represented by an In-M-Zn-based oxide that contains indium, zinc, and M (one or more of metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, and hafnium). The In-M-Zn-based oxide can be typically formed by a sputtering method. Alternatively, the In-M-Zn-based oxide can be formed by an ALD (Atomic layer deposition) method.
For example, an oxide (IGZO), which contains indium (In), gallium (Ga), and zinc (Zn), can be used as the In-M-Zn-based oxide. Alternatively, an oxide (IAZO), which contains indium (In), aluminum (Al), and zinc (Zn), may be used. Further alternatively, an oxide (IAGZO), which contains indium (In), aluminum (Al), gallium (Ga), and zinc (Zn), may be used.
It is preferable that the atomic ratio of metal elements in a sputtering target used to form the In-M-Zn-based oxide by a sputtering method satisfy In≥M and Zn≥M. The atomic ratio of metal elements in such a sputtering target is preferably, for example, In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=1:3:2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, or the like, or a composition in the neighborhood thereof. Note that the atomic ratio in the deposited semiconductor layer varies from the atomic ratio of metal elements of the sputtering target in a range of +40%.
An oxide semiconductor with low carrier density is used for the semiconductor layer. For example, for the semiconductor layer, an oxide semiconductor whose carrier density is lower than or equal to 1×1017/cm3, preferably lower than or equal to 1×1015/cm3, further preferably lower than or equal to 1×1013/cm3, still further preferably lower than or equal to 1×1011/cm3, even further preferably lower than 1×1010/cm3, and higher than or equal to 1×10−9/cm3 can be used. Such an oxide semiconductor is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. The oxide semiconductor has a low density of defect states and can thus be referred to as an oxide semiconductor having stable characteristics.
Note that the composition is not limited to those, and a material having appropriate composition may be used depending on required semiconductor characteristics and electrical characteristics of the transistor (field-effect mobility, threshold voltage, or the like). To obtain the required semiconductor characteristics of the transistor, it is preferable that the carrier density, the impurity concentration, the defect density, the atomic ratio between a metal element and oxygen, the interatomic distance, the density, and the like of the semiconductor layer be set to appropriate values.
Note that the display device illustrated in
Although
The EL layer 112W can have a tandem structure in which EL layers emitting R, G, and B light are connected in series, for example. Alternatively, a structure in which light-emitting layers emitting R, G, and B light are connected in series may be used. As the coloring layers 114R, 114G, and 114B, for example, red, green, and blue color filters can be used.
As illustrated in
Described below is an example of a manufacturing method of a light-emitting device that can be manufactured with the manufacturing equipment of one embodiment of the present invention. Here, description is made using an example of the light-emitting device included in the display device 100 described in the above structure example.
Thin films constituting the display device (insulating films, semiconductor films, conductive films, and the like) can be formed by a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, an atomic layer deposition (ALD) method, or the like. Examples of the CVD method include a plasma-enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. As an example of the thermal CVD method, a metal organic chemical vapor deposition (MOCVD: Metal Organic CVD) method can be given. The manufacturing equipment of one embodiment of the present invention can include an apparatus for forming thin films by the above method.
A method such as spin coating, dipping, spray coating, ink-jetting, dispensing, screen printing, offset printing, a doctor knife method, slit coating, roll coating, curtain coating, or knife coating can be employed for formation of the thin films constituting the display device (insulating films, semiconductor films, conductive films, and the like) and application of a resin or the like used for a lithography step. The manufacturing equipment of one embodiment of the present invention can include an apparatus for forming thin films by the above method. In addition, the manufacturing equipment of one embodiment of the present invention can include an apparatus for applying a resin by the above method.
Thin films that constitute the display apparatus can be processed by a photolithography method or the like. Alternatively, the thin films may be processed by a nanoimprinting method. A method in which island-shaped thin films are directly formed by a deposition method using a blocking mask may also be used.
There are two typical methods for processing a thin film using a photolithography method. In one of the methods, a resist mask is formed over a thin film that is to be processed, the thin film is processed by etching or the like, and then the resist mask is removed. In the other method, a photosensitive thin film is formed and then processed into a desired shape by light exposure and development.
As the light used for light exposure in the photolithography method, for example, an i-line (with a wavelength of 365 nm), a g-line (with a wavelength of 436 nm), an h-line (with a wavelength of 405 nm), or combined light of any of them can be used. Alternatively, ultraviolet light, KrF laser light, ArF laser light, or the like can be used. Light exposure may be performed by liquid immersion exposure technique. As the light used for light exposure, extreme ultraviolet (EUV) light or X-rays may also be used. Furthermore, instead of the light used for the light exposure, an electron beam can also be used. It is preferable to use extreme ultraviolet light, X-rays, or an electron beam because they can perform extremely fine processing. Note that a photomask is not needed when light exposure is performed by scanning with a beam such as an electron beam.
For etching of thin films, a dry etching method, a wet etching method, or the like can be used. The manufacturing equipment of one embodiment of the present invention can include an apparatus for processing thin films by the above method.
As the substrate 60, a substrate having at least heat resistance high enough to withstand later heat treatment can be used. In the case where an insulating substrate is used as the substrate 60, a glass substrate, a quartz substrate, a sapphire substrate, a ceramics substrate, an organic resin substrate, or the like can be used. Alternatively, a single crystal semiconductor substrate or a polycrystalline semiconductor substrate using silicon or silicon carbide as a material, a compound semiconductor substrate of silicon germanium or the like, a semiconductor substrate such as an SOI substrate, or the like can be used. Note that the shape of the substrate is not limited to a circular wafer, and a square substrate can also be used.
For example, in the case of using a glass substrate, a glass substrate with a large size of the 3rd generation (a substrate size of 550 mm×650 mm), the 3.5th generation (a substrate size of 600 mm×720 mm), the 6th generation (1500 mm×1850 mm), the 8th generation (2160 mm×2460 mm), the 10th generation (2850 mm×3050 mm), or the like can be used.
As the substrate 60, it is particularly preferable to use the semiconductor substrate or the insulating substrate over which a semiconductor circuit including a semiconductor element such as a Si transistor is formed. The semiconductor circuit preferably forms a pixel circuit, a gate line driver circuit (a gate driver), a source line driver circuit (a source driver), or the like. In addition to the above, an arithmetic circuit, a memory circuit, or the like may be formed.
Next, a plurality of pixel circuits are formed over the substrate 60, and the pixel electrode 111 is formed for each of the pixel circuits (see
It is preferable to use, for the pixel electrodes 111, a material (e.g., silver or aluminum) having reflectance as high as possible in the whole wavelength range of visible light. The pixel electrodes 111 formed using the material can be referred to as electrodes having a light-reflecting property. This can increase color reproducibility as well as light extraction efficiency of the light-emitting devices.
The light-emitting devices preferably employ a microcavity structure. Therefore, one of the pair of electrodes of the light-emitting devices is preferably an electrode having properties of transmitting and reflecting visible light (a semi-transmissive and semi-reflective electrode), and the other is preferably an electrode having a property of reflecting visible light (a reflective electrode). When the light-emitting device has a microcavity structure, light obtained from the light-emitting layer can be resonated between the electrodes, whereby light emitted from the light-emitting device can be intensified. For that reason, the pixel electrode 111 may have a stacked-layer structure of the material with high reflectivity and a light-transmitting conductive film (indium tin oxide or the like).
Next, a baking process for removing moisture remaining on the surface of the pixel electrode 111 is performed. A vacuum baking apparatus or a deposition apparatus can be used for the baking process. The vacuum baking is preferably performed in a condition at 100° C. or higher.
Next, the pixel electrode 111 is subjected to surface treatment. For example, the surface of the pixel electrode 111 is irradiated with plasma generated using a fluorine-based gas such as CF4 with the use of a plasma treatment apparatus. By the plasma treatment, the adhesion between the pixel electrode 111 and an EL film which is formed in the next step can be increased, which can inhibit the occurrence of peeling defects.
Next, an EL film 112Rf to be the EL layer 112R later is formed over the pixel electrode 111.
The EL film 112Rf includes at least a film containing a red-light-emitting organic compound. A structure may be employed in which an electron-injection layer, an electron-transport layer, a charge-generation layer, a hole-transport layer, and a hole-injection layer are stacked in addition to the above. The EL film 112Rf can be formed by an evaporation method or a sputtering method, for example. Note that without limitation to this, the above deposition method can be used as appropriate.
Next, a protective film 125Rf to be a protective layer 125R later is formed over the EL film 112Rf (see
The protective layer 125R is a tentative protective layer, which is also called a sacrifice layer, used for preventing the EL layer 112R from being degraded and vanishing in a manufacturing process of the light-emitting devices. The protective film 125Rf is preferably formed by a deposition method that has high barrier property against moisture or the like and is less likely to give damage to an organic compound during deposition. Furthermore, the protective film 125Rf is preferably formed using a material for which an etchant less likely to give damage to the organic compound in an etching step is acceptable. For the protective film 125Rf, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be used.
For example, a metal such as tungsten, an inorganic insulating film such as an aluminum oxide film, or a stacked films thereof is preferably used. Alternatively, a stacked-layer structure of an aluminum oxide film formed by an ALD method and a silicon nitride film formed by a sputtering method may be used. In the case of employing this structure, the deposition temperature at the time of deposition by an ALD method and a sputtering method is preferably higher than or equal to room temperature and lower than or equal to 120° C., further preferably higher than or equal to room temperature and lower than or equal to 100° C., in which case adverse effects on the EL layer can be reduced. In the case where the protective layer 125R has a stacked-layer film, it is preferable to reduce the stress of the stacked-layer film. Specifically, a stress applied to each layer in the stacked-layer film is preferably higher than or equal to −500 MPa and less than or equal to +500 MPa, further preferably higher than or equal to −200 MPa and lower than or equal to +200 MPa, in which case troubles in the process, such as film separation and peeling, can be reduced.
<Formation of Resist Mask 143a>
Next, a resist mask 143a is formed over the pixel electrode 111 corresponding to the light-emitting device 110R (see
Next, the protective film 125Rf is etched using the resist mask 143a as a mask, whereby the island-shaped protective layer 125R is formed. A dry etching method or a wet etching method can be used for the etching process. After that, the resist mask 143a is removed by ashing or using a resist stripper (see
Then, the EL film 112Rf is etched using the protective layer 125R as a mask, whereby the island-shaped EL layer 112R is formed (see
Next, a protective film 126Rf and a protective film 128Rf that cover the EL layer 112R and the protective layer 125R are deposited (see
Next, the protective film 126Rf and the protective film 128Rf are subjected to anisotropic etching by a dry etching method to leave parts of the protective film 126Rf and the protective film 128Rf, whereby a protective layer 126R and a protective layer 128R are formed (see
Next, a baking process for removing moisture remaining on the surface of the pixel electrode 111 is performed. A vacuum baking apparatus or a deposition apparatus can be used for the baking process. As the condition which does not give damage to the EL layer 112R, the vacuum baking is performed at a temperature lower than or equal to 100° C., preferably, lower than or equal to 90° C., further preferably lower than or equal to 80° C. In the case of vacuum baking at 80° C., the sufficient amount of moisture (H2O) has been released in 30 minutes or more according to the measurement by thermal desorption spectroscopy (TDS).
Next, the exposed pixel electrode 111 is subjected to surface treatment. For example, the surface of the pixel electrode 111 is irradiated with plasma generated using a fluorine-based gas such as CF4 with a plasma treatment apparatus. Then, an EL film 112Gf to be the EL layer 112G is formed over the pixel electrode 111.
The EL film 112Gf includes at least a film containing a green-light-emitting organic compound. A structure may be employed in which an electron-injection layer, an electron-transport layer, a charge-generation layer, a hole-transport layer, and a hole-injection layer are stacked in addition to the above.
Then, a protective film 125Gf to be a protective layer 125G later is formed over the EL film 112Gf (see
<Formation of Resist Mask 143b>
Next, a resist mask 143b is formed over the pixel electrode 111 corresponding to the light-emitting device 110G (see
Subsequently, the protective film 125Gf is etched using the resist mask 143b as a mask, whereby the island-shaped protective layer 125G is formed. A dry etching method or a wet etching method can be used in the etching process. After that, the resist mask 143b is removed by ashing or using a resist stripper (see
Then, the EL film 112Gf is etched using the protective layer 125G as a mask, whereby the island-shaped EL layer 112G is formed (see
Next, a protective film 126Gf and a protective film 128Gf that cover the EL layer 112G and the protective layer 125G are deposited (see
Next, the protective film 126Gf and the protective film 128Gf are subjected to anisotropic etching by a dry etching method to leave parts of the protective film 126Gf and protective film 128Gf, whereby a protective layer 126G and a protective layer 128G are formed (see
Next, a baking process for removing moisture remaining on the surface of the pixel electrode 111 is performed. A vacuum baking apparatus or a deposition apparatus can be used for the baking process. As the condition which does not give damage to the EL layers 112R and 112G, the vacuum baking is performed at a temperature lower than or equal to 100° C., preferably, lower than or equal to 90° C., further preferably lower than or equal to 80° C.
Next, the exposed pixel electrode 111 is subjected to surface treatment. For example, the surface of the pixel electrode 111 is irradiated with plasma generated using a fluorine-based gas such as CF4 with a plasma treatment apparatus. Then, an EL film 112Bf to be the EL layer 112B is formed over the pixel electrode 111.
The EL film 112Bf includes at least a film containing a blue-light-emitting organic compound. A structure may be employed in which an electron-injection layer, an electron-transport layer, a charge-generation layer, a hole-transport layer, and a hole-injection layer are stacked in addition to the above.
Next, a protective film 125Bf to be a protective layer 125B later is formed over the EL film 112Bf (see
<Formation of Resist Mask 143c>
Next, a resist mask 143c is formed over the pixel electrode 111 corresponding to the light-emitting device 110B (see
Subsequently, the protective film 125Bf is etched using the resist mask 143c as a mask, whereby the island-shaped protective layer 125B is formed. A dry etching method or a wet etching method can be used in the etching process. After that, the resist mask 143c is removed by ashing or using a resist stripper (see
Then, the EL film 112Bf is etched using the protective layer 125B as a mask, whereby the island-shaped EL layer 112B is formed (see
Next, a protective film 126Bf and a protective film 128Bf that cover the EL layer 112B and the protective layer 125B are deposited (see
Next, an insulating layer 127 is formed to fill spaces between the pixel electrodes and between the EL layers (see
An insulating layer containing an organic material is preferably used as the insulating layer 127. For the insulating layer 127, an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimide-amide resin, a silicone resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, a precursor of any of these resins, or the like can be used, for example. Furthermore, for the insulating layer 127, an organic material such as polyvinyl alcohol (PVA), polyvinylbutyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or an alcohol-soluble polyamide resin may be used. Moreover, for the insulating layer 127, a photosensitive resin such as a UV curable resin can be used. The photosensitive resin may be either a positive photosensitive material or a negative photosensitive material and may be formed, for example, by a process similar to a lithography process with the use of a photoresist or the like.
Note that after the formation of the insulating layer 127, it is preferable to perform baking at a temperature range which does not cause damage to the EL layers in order to reduce moisture and oxygen contained in the insulating layer 127.
Next, ashing treatment is performed to perform planarization treatment on the insulating layer 127 (see
<Formation of Barrier Film 130f>
Next, a barrier film 130f is formed over the protective film 128Bf and the insulating layer 127 (see
<Formation of Resist Mask 143d>
Next, a resist mask 143d is formed over the insulating layer 127 (see
Next, the barrier film 130f and the protective film 128Bf are etched by a dry etching method to form a barrier layer 130 and a protective layer 128B (see
<Formation of protective layer 126B and removal of protective layers 125R, 125G, and 125B>
Then, the protective film 126Bf is etched using the barrier layer 130 as a mask to form a protective layer 126B. Furthermore, the protective layers 125R, 125G, and 125B are removed (see
For the etching of part of the protective film 126Bf and the removal of the protective layers 125R, 125G, and 125B, it is preferable to use a wet etching method or the like using an etchant suitable for the constituent materials. Note that baking treatment is preferably performed after the process. A vacuum baking apparatus or a deposition apparatus for the next process can be used for the baking process. As the condition which does not give damage to the EL layers 112R, 112G, and 112B, the vacuum baking is performed at a temperature lower than or equal to 100° C., preferably, lower than or equal to 90° C., further preferably lower than or equal to 80° C. In the case of vacuum baking at 80° C., the sufficient amount of moisture (H2O) has been released in 90 minutes or more according to the measurement by TDS. Note that in the baking process, vacuum baking is preferable as compared with air baking because vacuum baking makes it possible to cause degassing of released moisture or the like at a lower temperature. There is no particular limitation on the ultimate vacuum pressure of the vacuum baking and the ultimate vacuum pressure of the vacuum baking is lower than normal pressure.
Then, a conductive layer to be the common electrode 113 of the light-emitting devices is formed over the EL layer 112R, the EL layer 112G, and the EL layer 112B that are exposed in the previous process and the barrier layer 130 (see
Note that before the formation of the common electrode 113, a layer having a function of any of an electron-injection layer, an electron-transport layer, a charge-generation layer, a hole-transport layer, and a hole-injection layer may be provided as a common layer over the EL layer 112R, the EL layer 112G, and the EL layer 112B, so that the reliability is improved.
When the electrodes having a light-reflecting property are included as the pixel electrodes 111 and the electrode having a light-transmitting property is included as the common electrode 113, light emitted from the light-emitting layers can be emitted to the outside through the common electrode 113. In other words, top emission light-emitting devices are formed.
Next, the protective layer 121 is formed over the common electrode 113 (see
The above is the example of the manufacturing method of a light-emitting device that can be manufactured with the manufacturing equipment of one embodiment of the present invention. Note that
In the light-emitting device that can be manufactured with manufacturing equipment of one embodiment of the present invention, the pixel electrode and the EL layer may have areas equal to each other as illustrated in
The cluster C1 to the cluster C18 are specifically described below.
The cluster C1 includes the load chamber LD and the normal-pressure process apparatuses A1 and A2. The normal-pressure process apparatus A1 can be a cleaning apparatus, and the normal-pressure process apparatus A2 can be a baking apparatus. In the cluster C1, a cleaning process prior to deposition of the EL film 112Rf is performed.
The cluster C2 includes the vacuum process apparatuses V1 to V5. The vacuum process apparatuses V1 to V5 include a surface treatment apparatus for performing surface treatment on a base (pixel electrode) where the EL film 112Rf is formed, an evaporation apparatus for forming the EL film 112Rf, and a deposition apparatus (e.g., a sputtering apparatus or an ALD apparatus) for forming the protective film 125Rf. For example, the vacuum process apparatus V1 can be a plasma treatment apparatus, and the vacuum process apparatus V2 can be an apparatus for forming an organic compound layer to be a light-emitting layer (R). The vacuum process apparatuses V3 and V4 can be assigned to apparatuses for forming organic compound layers such as an electron-injection layer, an electron-transport layer, a charge-generation layer, a hole-transport layer, and a hole-injection layer. Furthermore, the vacuum process apparatus V5 can be assigned to an apparatus for forming the protective film 125Rf.
The cluster C3 includes the normal-pressure process apparatuses A3 to A7. The normal-pressure process apparatuses A3 to A7 can be apparatuses used for a lithography process. For example, the normal-pressure process apparatus A3 can be a resin (photoresist) application apparatus, the normal-pressure process apparatus A4 can be a pre-baking apparatus, the normal-pressure process apparatus A5 can be a light-exposure apparatus, the normal-pressure process apparatus A6 can be a developing apparatus, and the normal-pressure process apparatus A7 can be a post-baking apparatus. Alternatively, the normal-pressure process apparatus A5 may be a nanoimprint apparatus.
The cluster C4 includes the vacuum process apparatuses V6 to V10. For example, the vacuum process apparatus V6 can be a dry etching apparatus for forming the EL layer 112R. The vacuum process apparatus V7 can be a plasma treatment apparatus for performing cleaning on the side surface of the EL layer 112R and the like. The vacuum process apparatus V8 can be a standby chamber. The vacuum process apparatus V9 can be an ALD apparatus for performing deposition of the protective film 126Rf and the protective film 128Rf. The vacuum process apparatus V10 can be a dry etching apparatus for forming the protective layer 126R and the protective layer 128R.
The cluster C5 includes the normal-pressure process apparatuses A8 and A9. The normal-pressure process apparatus A8 can be a cleaning apparatus, and the normal-pressure process apparatus A9 can be a baking apparatus. In the cluster C5, a cleaning process prior to deposition of the EL film 112Gf is performed.
The cluster C6 includes the vacuum process apparatuses V11 to V15. The vacuum process apparatuses V11 to V15 include a surface treatment apparatus for performing surface treatment on a base (pixel electrode) where the EL film 112Gf is formed, an evaporation apparatus for forming the EL film 112Gf, and a deposition apparatus (e.g., a sputtering apparatus or an ALD apparatus) for forming the protective film 125Gf. For example, the vacuum process apparatus V11 can be a plasma treatment apparatus, and the vacuum process apparatus V12 can be an apparatus for forming an organic compound layer to be a light-emitting layer (G). The vacuum process apparatuses V13 and V14 can be assigned to apparatuses for forming organic compound layers such as an electron-injection layer, an electron-transport layer, a charge-generation layer, a hole-transport layer, and a hole-injection layer. Furthermore, the vacuum process apparatus V15 can be assigned to an apparatus for forming the protective film 125Gf.
The cluster C7 includes the normal-pressure process apparatuses A10 to A14. The normal-pressure process apparatuses A10 to A14 can be apparatuses used for a lithography process. The apparatuses can be assigned in a manner similar to those of the cluster C3.
The cluster C8 includes vacuum process apparatuses V16 to V20. For example, the vacuum process apparatus V16 can be a dry etching apparatus for forming the EL layer 112G. The vacuum process apparatus V17 can be a plasma treatment apparatus for performing cleaning on the side surface of the EL layer 112G and the like. The vacuum process apparatus V18 can be a standby chamber. The vacuum process apparatus V19 can be an ALD apparatus for performing deposition of the protective film 126Gf and the protective film 128Gf. The vacuum process apparatus V20 can be a dry etching apparatus for forming the protective layer 126G and the protective layer 128G.
The cluster C9 includes the normal-pressure process apparatuses A15 and A16. The normal-pressure process apparatus A15 can be a cleaning apparatus, and the normal-pressure process apparatus A16 can be a baking apparatus. In the cluster C9, a cleaning process prior to deposition of the EL film 112Bf is performed.
The cluster C10 includes the vacuum process apparatuses V21 to V25. The vacuum process apparatuses V21 to V25 include a surface treatment apparatus for performing surface treatment on a base (pixel electrode) where the EL film 112Bf is formed, an evaporation apparatus for forming the EL film 112Bf, and a deposition apparatus (e.g., a sputtering apparatus or an ALD apparatus) for forming the protective film 125Bf. For example, the vacuum process apparatus V21 can be a plasma treatment apparatus, and the vacuum process apparatus V22 can be an apparatus for forming an organic compound layer to be a light-emitting layer (B). The vacuum process apparatuses V23 and V24 can be assigned to apparatuses for forming organic compound layers such as an electron-injection layer, an electron-transport layer, a charge-generation layer, a hole-transport layer, and a hole-injection layer. Furthermore, the vacuum process apparatus V25 can be assigned to an apparatus for forming the protective film 125Bf.
The cluster C11 includes the normal-pressure process apparatuses A17 to A21. The normal-pressure process apparatuses A17 to A21 can be apparatuses used for a lithography process. The apparatuses can be assigned in a manner similar to those of the cluster C3.
The cluster C12 includes the vacuum process apparatuses V26 to V29. For example, the vacuum process apparatus V26 can be a dry etching apparatus for forming the EL layer 112B. The vacuum process apparatus V27 can be a plasma treatment apparatus for performing cleaning on the side surface of the EL layer 112G and the like. The vacuum process apparatus V28 can be a standby chamber. The vacuum process apparatus V29 can be an ALD apparatus for performing deposition of the protective film 126Bf and the protective film 128Bf.
The cluster C13 includes the normal-pressure process apparatuses A22 to A26. The normal-pressure process apparatuses A22 to A26 can be apparatuses used for a lithography process. The apparatuses can be assigned in a manner similar to those of the cluster C3.
The cluster C14 includes the vacuum process apparatuses V30 and V31. The vacuum process apparatus V30 can be an ashing apparatus for planarizing the insulating layer 127 or a dry etching apparatus having an ashing function. The vacuum process apparatus V31 can be a deposition apparatus (e.g., a sputtering apparatus, an ALD apparatus, or a CVD apparatus) for forming the barrier film 130f.
The cluster C15 includes the normal-pressure process apparatuses A27 to A31. The normal-pressure process apparatuses A27 to A31 can be apparatuses used for a lithography process. The apparatuses can be assigned in a manner similar to those of the cluster C3.
The cluster C16 includes the vacuum process apparatus V32. The vacuum process apparatus V32 can be a dry etching apparatus for etching the barrier film 130f and the protective film 128Bf.
The cluster C17 includes the normal-pressure process apparatuses A32 and A33. The normal-pressure process apparatus A32 can be a wet etching apparatus. In the normal-pressure process apparatus A32, an etching process of the protective film 126Bf and the protective layers 125R, 125G, and 125B is performed.
The cluster C18 includes the vacuum process apparatuses V33 to V35 and the unload chamber ULD. The vacuum process apparatus V33 can be assigned to an apparatus (e.g., an evaporation apparatus) for forming an organic compound layer that is any of an electron-injection layer, an electron-transport layer, a charge-generation layer, a hole-transport layer, and a hole-injection layer. The vacuum process apparatus V34 can be a deposition apparatus (e.g., a sputtering apparatus) for forming the common electrode 113. The vacuum process apparatus V35 can be a deposition apparatus (e.g., a sputtering apparatus) for forming the protective layer 121. Alternatively, another vacuum process apparatus V may be provided and a plurality of different deposition apparatuses (such as an evaporation apparatus and an ALD apparatus) are provided to form the common electrode 113 and the protective layer 121 so as to have stacked films.
Processes using the manufacturing equipment illustrated in
The manufacturing equipment of one embodiment of the present invention has a function of performing Process No. 1 to Process No. 72 in Table 1 and Table 2 automatically. This embodiment can be implemented in an appropriate combination with the structures described in the other embodiment.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-065828 | Apr 2021 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/IB2022/052794 | 3/28/2022 | WO |
