Claims
- 1. A method of forming a printed circuit board comprising a plurality of conductive bumps with substantially coplanar upper surfaces, said method comprising the steps of:(a) applying a continuous homogenous metal layer having a substantially planar face onto a first opposing surface of a dielectric substrate; (b) applying a first photoresist onto said face; (c) exposing and developing said first photoresist to define a pattern of conductive bumps; (d) etching the metal layer exposed by development of said first photoresist to reduce the height of said exposed metal layer and to form said plurality of conductive bumps with a continuous homogenous structure; (e) removing said first photoresist; (f) applying a second photoresist onto the metal layer; (g) exposing and developing said second photoresist to define a pattern of conductive bumps and circuit lines, wherein at least one of the circuit lines is continuous with at least one of the conductive bumps; (h) etching the metal layer exposed by the development of said second photoresist to form a pattern of circuit lines in said metal layer, wherein at least one of the circuit lines is continuous with at least one of the conductive bumps; and (i) removing said second photoresist to provide a printed circuit board comprising a plurality of conductive bumps having substantially coplanar upper surfaces.
- 2. The method of claim 1 wherein the metal layer comprises copper.
- 3. The method of claim 1 wherein a metal foil is laminated to the surface of the substrate in step (a).
- 4. The method of claim 1 wherein etching step (d) comprises treating the exposed surface of the metal layer with an etching agent comprising cupric chloride in an aqueous hydrochloric acid solution at a temperature of less than 110° F. for a time sufficient to reduce exposed portions of the metal layer to a desired second height and to produce said conductive bumps.
- 5. The method of claim 4 wherein the etching agent comprises cupric ions at a concentration of from about 125 to 225 gm/liter of etching agent.
- 6. The method of claim 4 wherein the metal layer is treated with the etching agent at a temperature ranging from about 75° F. to 100° F.
- 7. The method of claim 1 wherein the second photoresist is applied by an electrodeposition process.
- 8. The method of claim 1 further comprising the steps of applying a second dielectric onto the circuit lines, said second dielectric having an exposed planar face which is even with or below the upper surfaces of said bumps.
- 9. The method of claim 1 wherein a second metal layer is applied to a second opposing face of the substrate in step (a); and further comprising the steps of forming at least one metallized hole which extends through the first metal layer, the dielectric substrate, and the second metal layer to form an electrical connection between the first metal layer and second metal layer.
- 10. The method of claim 1 wherein etching step (d) comprises treating exposed surface temperature etching agent.
- 11. The method of claim 10 wherein exposing and developing step (g) defines a pattern of conductive bumps and circuit lines with at least one bump continuous with at least one circuit line; and wherein the etching step (h) forms a pattern of circuit lines in said metal layer with at least one bump continuous with at least one circuit line.
- 12. The method of claim 1 wherein etching step (d) comprises forming said conductive bumps with a minimal undercut.
- 13. The method of claim 1 wherein etching step (d) comprises treating the exposed surface of the metal layer with an etching agent selected from the group consisting of cupric chloride, ferric chloride or sodium persulphate.
- 14. The method of claim 1 wherein the metal layer has a thickness ranging from about 14 microns to 105 microns.
RELATED U.S. APPLICATION DATA
This application is a division of the Nov. 12, 1997 filing data of U.S. application Ser. No. 08/968,988, now U.S. Pat. No. 6,222,136.
US Referenced Citations (11)