BRIEF DESCRIPTION OF THE INVENTION
FIGS. 1A to 1C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 1 of the present invention.
FIGS. 2A to 2C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 1 of the present invention.
FIGS. 3A to 3C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 1 of the present invention.
FIGS. 4A and 4B are sectional views showing a manufacturing process of a semiconductor device in Embodiment 1 of the present invention.
FIGS. 5A to 5C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 2 of the present invention.
FIGS. 6A to 6C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 2 of the present invention.
FIGS. 7A and 7B are sectional views showing a manufacturing process of a semiconductor device in Embodiment 2 of the present invention.
FIGS. 8A to 8C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 3 of the present invention.
FIGS. 9A and 9B are sectional views showing a manufacturing process of a semiconductor device in Embodiment 3 of the present invention.
FIGS. 10A to 10C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 4 of the present invention.
FIGS. 11A to 11C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 4 of the present invention.
FIGS. 12A and 12B are sectional views showing a manufacturing process of a semiconductor device in Embodiment 4 of the present invention.
FIGS. 13A to 13C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 5 of the present invention.
FIGS. 14A to 14C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 5 of the present invention.
FIGS. 15A to 15C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 5 of the present invention.
FIGS. 16A to 16C are sectional views showing a manufacturing process of a semiconductor device in Embodiment 6 of the present invention.
FIGS. 17A to 17C are sectional views showing a manufacturing process of a prior semiconductor device.
FIG. 18 is a graph showing a relationship between the etching amount of contact bottom and the silicide area ratio of contact bottom.
FIG. 19 is a graph showing a relationship between the silicide area ratio of contact bottom and the contact resistance.