Semiconductor package with exposed die pad and body-locking leadframe

Abstract
A very thin, small outline, thermally enhanced semiconductor package includes a leadframe that is coined to form locking features on an exposed die pad and on a plurality of extremely narrow, closely spaced leads. The coined features improve the mechanical locking between the leadframe and the plastic body of the package to increase their resistance to delamination and subsequent penetration by moisture, and enable reliable wire bonds to be made to the otherwise extremely narrow leads.
Description
BACKGROUND

1. Field of the Invention


This invention relates to packaging of semiconductors in general, and in particular, to a very thin, small outline, thermally enhanced semiconductor package having a coined leadframe that provides a die pad with an exposed surface and features that lock the leadframe more securely to the plastic body of the package.


2. Description of the Related Art


Integrated circuits (“ICs”) are formed on a single die, or “chip,” cut from a semiconductor wafer containing a large number of identical dies. The dies are relatively small and fragile, are susceptible to harmful environmental elements, particularly moisture, and generate a relatively large amount of heat in a relatively small volume during operation. Accordingly, ICs must be packaged in affordable, yet robust packages that protect them from the environment, enable them to be reliably mounted to and interconnected with, for example, a printed circuit board (“PCB”) populated with associated electronic components, and to effectively dissipate the heat they generate during operation.


Leadframe types of semiconductor packages are well known and widely used in the electronics industry to house, mount, and interconnect a variety of ICs. A conventional leadframe is typically die-stamped from a sheet of flat-stock metal, and includes a plurality of metal leads temporarily held together in a planar arrangement about a central region during package manufacture by a rectangular frame comprising a plurality of expendable “dam-bars.” A mounting pad for a semiconductor die is supported in the central region by “tie-bars” that attach to the frame. The leads extend from a first end integral with the frame to an opposite second end adjacent to, but spaced apart from, the die pad.


During package manufacture, an IC die is attached to the die pad. Wire-bonding pads on the die are then connected to selected ones of the inner ends of the leads by fine, conductive bonding wires to convey power, ground, and signals between the die and the leads.


A protective body of an epoxy resin is molded over the assembly to enclose and seal the die, the inner ends of the leads, and the wire bonds against harmful environmental elements. The rectangular frame and the outer ends of the leads are left exposed outside of the body, and after molding, the frame is cut away from the leads and discarded, and the outer ends of the leads are appropriately formed for interconnection of the package with other, associated componentry.


In a variant of the above configuration, viz., a “land grid array” (“LGA”), or a “leadless chip carrier” (“LCC”) package, the outer portions of the leads are removed entirely from the package, and a terminal, or “land,” is provided on the lower surface of the leads and exposed through the lower surface of the body for mounting and inter-connection of the package to a PCB. In yet another variation, the die pad is “down-set” relative to the plane of the leads such that its lower surface is exposed through the lower surface of the body for enhanced dissipation of heat from the die.


While the foregoing prior art package configurations provide a reasonable compromise between packaging cost and performance, they also include some recognized problem areas where there is a long-felt need for improvement. One of these relates to the problem of making reliable wire bonds to leads that have been made extremely narrow to accommodate an extremely fine lead pitch. In particular, as package sizes decrease, lead densities remain the same or even increase. In response, leads are made much narrower so that they can be placed closer together. At some limiting width and pitch of the leads, the leads become so narrow and close together that it is difficult to make wire bonds to them reliably. It is therefore desirable to provide a leadframe design that can accommodate very narrow, closely pitched leads, yet one in which reliable wire bonds can be made to the leads.


Another problem relates to delamination of the leadframe components from the plastic package body, and the attendant problem of penetration of the package by moisture. In particular, the various parts of a semiconductor package experience greatly different amounts of thermal expansion and contraction with temperature changes due to the relatively large differences in the coefficients of thermal expansion of their respective materials, e.g., metal, epoxy resin, and silicon.


As a result, the leadframe components can become delaminated from the package body with temperature cycling of the package during manufacture or operation. Where delamination occurs at a boundary of the package body, a microscopic crack is created for the penetration of the package by moisture. This penetration can wreak a two-fold assault on the package: First, the moisture can corrode any metallizations present in its path, resulting in subsequent current leakage through the corrosive path; second, the moisture can expand and contract with temperature cycling of the package, resulting in further propagation of the cracks into the package, and hence, further penetration of the package by moisture. It is therefore desirable to provide a leadframe design that more securely locks the leadframe components to the plastic body of the package, thereby effectively reducing both the amount of delamination of the leadframe from the body and the resulting penetration of the body by moisture.


BRIEF SUMMARY OF THE INVENTION

The present invention includes a very thin, small outline, thermally enhanced semiconductor package having a leadframe that provides locking features on a plurality of extremely narrow, closely spaced leads and on an exposed die pad to improve mechanical locking between the leadframe and the plastic body of the package. The improved locking reduces the incidence of delamination between the leadframe and the package body and increases the resistance of the package to penetration by moisture.


The novel leadframe is made by patterning a metal plate to form: a rectangular frame around a periphery of the plate; a plurality of leads, each having an outer end integral with the frame and an inner end extending toward a central region of the frame; and a die pad disposed in the central region of the frame and adjacent to the inner ends of the leads. The die pad is attached to the frame or to two or more of the leads by two or more tie-bars.


A locking pad is coined into an outer end portion of each lead adjacent to the frame, a wire bonding pad is coined into an inner end portion of each lead adjacent to the die pad, and a recessed shoulder is coined into the lower surface of the die pad around a central portion thereof. The bonding pads increase the area of the leads adjacent to the die pad to enable reliable wire bonds to be made to the leads. The locking pads, bonding pads and recessed shoulder provide locking steps in the leadframe and increase the area of adhesion between the leadframe an over-molded plastic body to lock the two together more securely and increase their resistance to delamination and the subsequent penetration of the package by moisture. A mounting and interconnection land is defined on the lower surface of each lead between the locking pad on its outer end and the bonding pad on its inner end.


A semiconductor package is formed on the leadframe by attaching a semiconductor die to the upper surface of the die pad, wire-bonding the die to selected ones of the bonding pads, and molding a body of an insulative plastic over the die, the die pad, and the leads such that the locking pads, the bonding pads and the recessed shoulder on the lower surface of the die pad are covered by and interlock with the plastic body. The rectangular frame is exposed at a lateral periphery of the body for its subsequent removal, and the lands and the central portion of the lower surface of the die pad are exposed through a lower surface of the body for their subsequent attachment to a PCB.


A better understanding of the present invention may be had from a consideration of the detailed description below, particularly if such consideration is made in conjunction with the drawings.





BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS


FIG. 1 is a plan view of a ductile metal plate from which the leadframe of the present invention is etched;



FIG. 2 is a plan view of the leadframe of the present invention resulting from the etching of the plate shown in FIG. 1;



FIGS. 3 and 4 are top and bottom plan views, respectively, of the leadframe of the present invention after coining of the leadframe shown in FIG. 2;



FIG. 5 is a top plan view of the leadframe seen in FIG. 3 showing the attachment of a semiconductor die thereto;



FIG. 6 is a cross-sectional, elevation view of the leadframe of the present invention disposed between the inner faces of two coining dies;



FIG. 7 is a cross-sectional, elevation view of one embodiment of a semiconductor package in accordance with the present invention, shown mounted to a PCB;



FIG. 8 is a side elevation view of the semiconductor package shown in FIG. 7; and,



FIG. 9 is a bottom plan view of the semiconductor package shown in FIGS. 7 and 8.





DETAILED DESCRIPTION OF THE INVENTION


FIGS. 1–5 show in plan view the sequential fabrication and partial assembly of one embodiment of the novel leadframe 10 of the present invention. Fabrication of the leadframe begins with the provision of a thin, polygonal plate 12 of a ductile metal (FIG. 1), which is then patterned to form the nascent leadframe 10 (FIG. 2).


In the exemplary square embodiment illustrated in FIG. 1, the plate 12 is about 0.254 millimeters (“mm”) thick, about 4 mm on a side, and made of a copper alloy. Other metals suitable for use in the leadframe 10 include aluminum and iron-nickel (Kovar) alloys.



FIG. 2 is a top plan view of the leadframe 10 patterned from the plate 12 shown in FIG. 1. The leadframe 10 comprises a rectangular frame 14 defined around a periphery of the plate 12; a plurality of leads 16, each having an outer end portion 18 integral with the frame 14 and an inner end portion 20 extending toward a central region of the frame, the center of which is marked by a cross; and, a die pad 22 disposed in the central region of the frame and adjacent to the inner ends of the leads. In the embodiment illustrated, the die pad 22 is attached directly to the frame 14 by two or more tie-bars 24, or indirectly through two or more of the leads 16, as shown in FIG. 2.


In the exemplary embodiment illustrated in FIG. 2, the leads 16 are about 0.178 mm wide, about 0.254 mm long, and spaced at a pitch of about 0.500 mm. The die pad 22 is about 2.120 mm on a side. The leadframe 10 can be patterned from the plate 12 by, e.g., die-stamping, etching, using photolithography techniques, electrical discharge machining (“EDM”), or by laser-beam cutting.


Those of skill in the art will recognize the difficulty of making reliable wire bonds to the very narrow, closely pitched leads 16. To overcome this problem, and to provide features on the leadframe 10 for more effectively locking the leadframe to a plastic package body 66 (shown as broken outline in FIGS. 2–5) molded over it, the leadframe is subjected to a coining process, which is illustrated in an enlarged cross-sectional view in FIG. 6.


As shown in FIG. 6, after patterning, the planar leadframe 10 is placed between the opposing faces of an upper coining die 26 and a lower coining die 28. The upper face 30 of the lower die 28 includes three raised surfaces 32, 34, 36 that, in a plan view (not illustrated) comprise three concentric rectangles. The opposing lower face 38 of the upper die 26 is substantially flat.


Since the metal of the leadframe 10 is substantially incompressible, the effect of the local coining forces exerted by the dies on a given volume of the metal is to displace the metal laterally wherever such flow is unrestricted, i.e., its thickness is decreased, its length and/or width is increased, while its volume remains the same.


Thus, when the two dies 26, 28 are brought together forcefully in the direction of the arrows shown, the raised surface 32 coins a locking pad 40 into the outer end portion 18 of each lead 16 adjacent to the frame 14; the raised surface 34 coins a bonding pad 42 into the inner end portion 20 of each lead 16 adjacent to the die pad 22; and, the raised surface 36 coins a recess shoulder 44 into the lower surface of the die pad 22 around a central portion 46 thereof. A mounting and interconnection land 48 is also defined on the lower surface of each lead 16 between the locking pad 40 on its outer end 18 and the bonding pad 42 on its inner end 20.



FIGS. 3 and 4 are top and bottom plan views, respectively, of the leadframe 10 after coining, and show the spatulate locking pads 40 and bonding pads 42 on the opposite ends of the respective leads 16, and the recessed shoulder 44 on the die pad 22, resulting from the coining process. An enlarged cross-sectional view of the coined leadframe 10 is shown in FIG. 7.


It will be noted that the upper surface of the leadframe 10 remains substantially planar after coining, whereas, the lower surface of the leadframe comprises a plurality of stepped, or recessed, plateaus where coining has taken place, as shown by the cross-hatched areas in FIG. 4. In the particular embodiment illustrated in the figures, the lower surfaces 50 of the locking pads 40 are coined to a depth of about 0.076 mm, the lower surfaces 52 of the bonding pads 42 are coined to a depth of about 0.127 mm, and the lower surface 54 of the recessed shoulder 44 is coined to a depth of about 0.051 mm.


The plurality of steps created in the leads 16 and the die pad 22 by these recessed surfaces, combined with the increased adhesion area of the surfaces defining them, act as “keys” to more effectively lock the leadframe 10 into a surrounding body of plastic and thereby resist delamination between the two. This increased adhesion also increases the resistance of the package to the propagation of cracks from an exterior boundary of the package, and hence, a subsequent penetration of the package by moisture. Additionally, the bonding pads 42 effectively enlarge the inner end portions 20 of the leads 16 immediately adjacent to the die pad 22 so that reliable wire bonds can easily be made to the otherwise extremely narrow leads.



FIG. 5 illustrates the attachment of a semiconductor die 56 to the upper surface of the die pad 22. The die 56 may be attached with a layer of an adhesive 58 (see FIG. 7), a layer of a double-backed adhesive tape, or by soldering it to the die pad. The die 56 is electrically connected to the leads 16 by a plurality of conductive wires 60 bonded at opposite ends to contact pads 62 on a top surface of the die and selected ones of the bonding pads 42 on the leads, respectively (see FIG. 5). The wire bonding can be effected using either ultrasonic or thermo-compression bonding techniques. It may be noted that the bonding pads 42 on the leads 16 connected to the tie-bars 24 make ample provision for the “down-bonding” of grounding wires 64 from the die 56 to the die pad 22.


After the die 56 has been attached to the die pad 22 and wire bonded to the leads 16, the leadframe 10 is placed in the cavity of a clam-shell mold (not illustrated), and a molten, insulative plastic, e.g., an epoxy resin, is injected into the cavity to form a protective body 66 over the die, the die pad, and the leads to seal and protect them from the environment. The plastic body 66 of the resulting semiconductor package 68 completely envelopes the leadframe 10 such that it surrounds the locking pads 40, the bonding pads 42, and the recessed shoulder 44 on the lower surface of the die pad and interlocks with them to resist delamination between the body and the leadframe. The rectangular frame 14 (shown dotted in FIG. 7) of the leadframe 10 is exposed outside of the lateral periphery of the body 66, and is subsequently cut away from the body and discarded in a finishing operation to leave the outer ends 70 of the locking pads 40 exposed through the side surfaces 72 of the package 68 (see FIG. 8). The central portion 46 of the lower surface of the die pad 22 and the rectangular lands 48 on the lower surfaces of the leads 16 are exposed through the lower surface 74 of the body 66 (see FIG. 9) for their subsequent attachment to a PCB 76, as illustrated in the cross-sectional view of FIG. 7. The mounting and interconnection lands 48 and the exposed central portion 46 of the die pad 22 can be attached and electrically connected to the PCB by a solder joint, or, in a low-temperature attachment, by a layer 78 of a filled, electrically and thermally conductive adhesive.


The thin, small outline, LGA semiconductor package 68 incorporating the coined leadframe 10 of the invention and shown in FIGS. 7–9 is about 4 mm on a side, and about 1 mm thick.


Those skilled in the packaging art will understand that many variations of the particular embodiments of the novel leadframe and package illustrated and described herein are possible, depending on the particular problem at hand. For example, although a square package 68 is illustrated in the figures, a rectangular or polygonal package is easily confected in accordance with teachings herein. Similarly, fewer or greater numbers of leads 16 can be incorporated into the package, on either two, or all sides thereof. Further, the leads 16 can be extended outside of the body 66 of the package 68 and the lands 48 over-molded with plastic to yield a package with peripheral leads, such as those found in a conventional “quad-flat” package.


Accordingly, the particular embodiments illustrated and described herein should be understood as exemplary in nature only, and not as limitations on the scope of the invention, which is defined instead by that of the claims appended hereafter.

Claims
  • 1. A semiconductor package, comprising: a metal lead frame, including a plurality of elongate leads arrayed around a central region thereof, each lead having a generally planar upper surface, an outer end portion extending away from the central region and defining an outer end, an inner end portion extending toward the central region, and a middle portion extending between the outer and inner end portions, the middle portion being of a lead width and having a lower surface which defines a land;a spatulate bonding pad formed in the inner end portion of each lead and having a bonding pad width which exceeds the lead width, the bonding pad being partially defined by the upper surface of the lead and including a lower bonding pad surface positioned between the upper surface of the lead and the lower surface of the lead which defines the land; anda die pad attached to the lead frame in the central region thereof and adjacent to the inner end portions of the leads, the die pad having an upper surface and a lower surface; anda body of an insulative plastic molded over the die, the die pad, and the leads such that the plastic body surrounds the bonding pads and interlocks with them, and such that the lands are exposed in and substantially flush with a lower surface of the body and the outer ends of the leads are exposed in and substantially flush with a side surface of the body.
  • 2. The semiconductor package of claim 1, wherein the die pad is attached to the frame by at least one tie-bar.
  • 3. The semiconductor package of claim 1, wherein the die pad is attached to at least one of the leads by at least one tie-bar.
  • 4. The semiconductor package of claim 3, wherein each of the bonding pads has a generally circular configuration.
  • 5. The semiconductor package of claim 1, wherein the lands are rectangular.
  • 6. The semiconductor package of claim 1, further comprising: a semiconductor die attached to the upper surface of the die pad; anda plurality of conductive wires bonded at opposite ends to pads on a top surface of the die and selected ones of the bonding pads on the leads.
  • 7. The semiconductor package of claim 1, wherein the lower surface of the die pad has a central portion and a recessed shoulder extending around the central portion, and the plastic body surrounds the recessed shoulder such that the central portion of the lower surface of the die pad is exposed in the lower surface of the body.
  • 8. The semiconductor package of claim 1, wherein the leadframe comprises an alloy of copper, aluminum, or iron and nickel.
  • 9. The semiconductor package of claim 1, wherein the insulative plastic of the body comprises an epoxy resin.
  • 10. A lead frame for a semiconductor package, comprising: a plurality of elongate metal leads arrayed around a central region, each lead having a generally planar upper surface, an outer end portion extending away from the central region, an inner end portion extending toward the central region, and a middle portion extending between the outer and inner end portions, the middle portion being of a lead width and having a lower surface which defines a land;a spatulate bonding pad formed into the inner end portion of each of the leads, the spatulate bonding pad of each of the leads having a pad width which exceeds the lead width, the bonding pad being partially defined by the upper surface of the lead and including a lower bonding pad surface positioned between the upper surface of the lead and the lower surface of the lead which defines the land; anda disposable frame connected to the leads.
  • 11. The lead frame of claim 10, further comprising a die pad disposed in the central region and adjacent the inner end portions of the leads, the die pad having a recessed shoulder extending around a periphery of a lower surface thereof.
  • 12. The semiconductor package of claim 10, wherein the lands are rectangular.
  • 13. A semiconductor package of a type that includes a metal lead frame having a plurality of elongate leads radiating out from a central die pad, each lead having a generally planar upper surface and a lower surface which defines a land, a semiconductor die mounted on the die pad, a plurality of wire bonds connecting the die to the leads, and a protective plastic body molded over the leads, the die pad, the die, and the wire bonds, the improvement in combination therewith comprising: a spatulate bonding pad formed into an inner end portion of each lead and adjacent to the die pad, the bonding pad having a bonding pad width, the bonding pad being partially defined by the upper surface of the lead and including a lower bonding pad surface positioned between the upper surface of the lead and the lower surface of the lead which defines the land; andthe bonding pad width exceeding a lead width of a middle portion of each lead extending between the inner and outer end portions thereof, with the leads, the die pad and the bonding pads having coplanar upper surfaces.
  • 14. The semiconductor package of claim 13, wherein the wire bonds are connected to the bonding pads.
  • 15. The semiconductor package of claim 13, wherein the middle portion of each lead has a lower surface defining a land which is exposed through a lower surface of the plastic body.
  • 16. The semiconductor package of claim 15, wherein the lands are rectangular.
  • 17. The semiconductor package of claim 13, further comprising a recessed shoulder formed into a periphery of a lower surface of the die pad such that a central portion of the lower surface inside of the shoulder is exposed through a lower surface of the plastic body.
RELATED APPLICATION

The present application is a continuation of U.S. application Ser. No. 09/436,158 entitled SEMICONDUCTOR PACKAGE WITH EXPOSED DIE PAD AND BODY-LOCKING LEADFRAME, filed Nov. 9, 1999 U.S. Pat. No. 6,847,103.

US Referenced Citations (295)
Number Name Date Kind
2596993 Gookin May 1952 A
3435815 Forcier Apr 1969 A
3734660 Davies et al. May 1973 A
3838984 Crane et al. Oct 1974 A
4054238 Lloyd et al. Oct 1977 A
4189342 Kock Feb 1980 A
4258381 Inaba Mar 1981 A
4289922 Devlin Sep 1981 A
4301464 Otsuki et al. Nov 1981 A
4332537 Slepcevic Jun 1982 A
4417266 Grabbe Nov 1983 A
4451224 Harding May 1984 A
4530152 Roche et al. Jul 1985 A
4541003 Otsuka et al. Sep 1985 A
4646710 Schmid et al. Mar 1987 A
4707724 Suzuki et al. Nov 1987 A
4727633 Herrick Mar 1988 A
4737839 Burt Apr 1988 A
4756080 Thorp, Jr. et al. Jul 1988 A
4812896 Rothgery et al. Mar 1989 A
4862245 Pashby et al. Aug 1989 A
4862246 Masuda et al. Aug 1989 A
4907067 Derryberry Mar 1990 A
4916519 Ward Apr 1990 A
4920074 Shimizu et al. Apr 1990 A
4935803 Kalfus et al. Jun 1990 A
4942454 Mori et al. Jul 1990 A
4987475 Schlesinger et al. Jan 1991 A
5018003 Yasunaga May 1991 A
5029386 Chao et al. Jul 1991 A
5041902 McShane Aug 1991 A
5057900 Yamazaki Oct 1991 A
5059379 Tsutsumi et al. Oct 1991 A
5065223 Matsuki et al. Nov 1991 A
5070039 Johnson et al. Dec 1991 A
5087961 Long et al. Feb 1992 A
5091341 Asada et al. Feb 1992 A
5096852 Hobson Mar 1992 A
5118298 Murphy Jun 1992 A
5151039 Murphy Sep 1992 A
5157475 Yamaguchi Oct 1992 A
5157480 McShane et al. Oct 1992 A
5168368 Gow, 3rd et al. Dec 1992 A
5172213 Zimmerman Dec 1992 A
5172214 Casto Dec 1992 A
5175060 Enomoto Dec 1992 A
5200362 Lin et al. Apr 1993 A
5200809 Kwon Apr 1993 A
5214845 King et al. Jun 1993 A
5216278 Lin et al. Jun 1993 A
5218231 Kudo Jun 1993 A
5221642 Burns Jun 1993 A
5250841 Sloan et al. Oct 1993 A
5252853 Michii Oct 1993 A
5258094 Furui et al. Nov 1993 A
5266834 Nishi et al. Nov 1993 A
5273938 Lin et al. Dec 1993 A
5277972 Sakumoto et al. Jan 1994 A
5278446 Nagaraj et al. Jan 1994 A
5279029 Burns Jan 1994 A
5281849 Singh Deo et al. Jan 1994 A
5294897 Notani et al. Mar 1994 A
5327008 Djennas et al. Jul 1994 A
5332864 Liang et al. Jul 1994 A
5335771 Murphy Aug 1994 A
5336931 Juskey et al. Aug 1994 A
5343076 Katayama et al. Aug 1994 A
5358905 Chiu Oct 1994 A
5365106 Watanabe Nov 1994 A
5381042 Lerner et al. Jan 1995 A
5391439 Tomita et al. Feb 1995 A
5406124 Morita et al. Apr 1995 A
5410180 Fujii et al. Apr 1995 A
5414299 Wang et al. May 1995 A
5424576 Djennas et al. Jun 1995 A
5428248 Cha Jun 1995 A
5435057 Bindra et al. Jul 1995 A
5444301 Song et al. Aug 1995 A
5452511 Chang Sep 1995 A
5454905 Fogelson Oct 1995 A
5474958 Djennas et al. Dec 1995 A
5484274 Neu Jan 1996 A
5493151 Asada et al. Feb 1996 A
5508556 Lin Apr 1996 A
5517056 Bigler et al. May 1996 A
5521429 Aono et al. May 1996 A
5528076 Pavio Jun 1996 A
5534467 Rostoker Jul 1996 A
5539251 Iverson et al. Jul 1996 A
5543657 Diffenderfer et al. Aug 1996 A
5544412 Romero et al. Aug 1996 A
5545923 Barber Aug 1996 A
5581122 Chao et al. Dec 1996 A
5592019 Ueda et al. Jan 1997 A
5592025 Clark et al. Jan 1997 A
5594274 Suetaki Jan 1997 A
5595934 Kim Jan 1997 A
5604376 Hamburgen et al. Feb 1997 A
5608265 Kitano et al. Mar 1997 A
5608267 Mahulikar et al. Mar 1997 A
5625222 Yoneda et al. Apr 1997 A
5633528 Abbott et al. May 1997 A
5639990 Nishihara et al. Jun 1997 A
5640047 Nakashima Jun 1997 A
5641997 Ohta et al. Jun 1997 A
5643433 Fukase et al. Jul 1997 A
5644169 Chun Jul 1997 A
5646831 Manteghi Jul 1997 A
5650663 Parthasarathi Jul 1997 A
5661088 Tessier et al. Aug 1997 A
5663593 Mostafazadeh et al. Sep 1997 A
5665996 Williams et al. Sep 1997 A
5673479 Hawthorne Oct 1997 A
5683806 Sakumoto et al. Nov 1997 A
5689135 Ball Nov 1997 A
5696666 Miles et al. Dec 1997 A
5701034 Marrs Dec 1997 A
5703407 Hori Dec 1997 A
5710064 Song et al. Jan 1998 A
5723899 Shin Mar 1998 A
5724233 Honda et al. Mar 1998 A
5726493 Yamashita et al. Mar 1998 A
5736432 Mackessy Apr 1998 A
5745984 Cole, Jr. et al. May 1998 A
5753532 Sim May 1998 A
5753977 Kusaka et al. May 1998 A
5766972 Takahashi et al. Jun 1998 A
5770888 Song et al. Jun 1998 A
5776798 Quan et al. Jul 1998 A
5783861 Son Jul 1998 A
5801440 Chu et al. Sep 1998 A
5814877 Diffenderfer et al. Sep 1998 A
5814881 Alagaratnam et al. Sep 1998 A
5814883 Sawai et al. Sep 1998 A
5814884 Davis et al. Sep 1998 A
5817540 Wark Oct 1998 A
5818105 Kouda Oct 1998 A
5821457 Mosley et al. Oct 1998 A
5821615 Lee Oct 1998 A
5834830 Cho Nov 1998 A
5835988 Ishii Nov 1998 A
5844306 Fujita et al. Dec 1998 A
5856911 Riley Jan 1999 A
5859471 Kuraishi et al. Jan 1999 A
5866939 Shin et al. Feb 1999 A
5871782 Choi Feb 1999 A
5874784 Aoki et al. Feb 1999 A
5877043 Alcoe et al. Mar 1999 A
5886397 Ewer Mar 1999 A
5886398 Low et al. Mar 1999 A
5894108 Mostafazadeh et al. Apr 1999 A
5897339 Song et al. Apr 1999 A
5900676 Kweon et al. May 1999 A
5903049 Mori May 1999 A
5903050 Thurairajaratnam et al. May 1999 A
5909053 Fukase et al. Jun 1999 A
5915998 Stidham et al. Jun 1999 A
5917242 Ball Jun 1999 A
5939779 Kim Aug 1999 A
5942794 Okumura et al. Aug 1999 A
5951305 Haba Sep 1999 A
5959356 Oh Sep 1999 A
5969426 Baba et al. Oct 1999 A
5973388 Chew et al. Oct 1999 A
5976912 Fukutomi et al. Nov 1999 A
5977613 Takata et al. Nov 1999 A
5977615 Yamaguchi et al. Nov 1999 A
5977630 Woodworth et al. Nov 1999 A
5981314 Glenn et al. Nov 1999 A
5986333 Nakamura Nov 1999 A
5986885 Wyland Nov 1999 A
6001671 Fjelstad Dec 1999 A
6013947 Lim Jan 2000 A
6018189 Mizuno Jan 2000 A
6020625 Qin et al. Feb 2000 A
6025640 Yagi et al. Feb 2000 A
6031279 Lenz Feb 2000 A
RE36613 Ball Mar 2000 E
6034423 Mostafazadeh et al. Mar 2000 A
6040626 Cheah et al. Mar 2000 A
6043430 Chun Mar 2000 A
6060768 Hayashida et al. May 2000 A
6060769 Wark May 2000 A
6072228 Hinkle et al. Jun 2000 A
6075284 Choi et al. Jun 2000 A
6081029 Yamaguchi Jun 2000 A
6084310 Mizuno et al. Jul 2000 A
6087715 Sawada et al. Jul 2000 A
6087722 Lee et al. Jul 2000 A
6100594 Fukui et al. Aug 2000 A
6113473 Costantini et al. Sep 2000 A
6114752 Huang et al. Sep 2000 A
6118174 Kim Sep 2000 A
6118184 Ishio et al. Sep 2000 A
RE36907 Templeton, Jr. et al. Oct 2000 E
6130115 Okumura et al. Oct 2000 A
6130473 Mostafazadeh et al. Oct 2000 A
6133623 Otsuki et al. Oct 2000 A
6140154 Hinkle et al. Oct 2000 A
6143981 Glenn Nov 2000 A
6169329 Farnworth et al. Jan 2001 B1
6175150 Ichikawa et al. Jan 2001 B1
6177718 Kozono Jan 2001 B1
6181002 Juso et al. Jan 2001 B1
6184465 Corisis Feb 2001 B1
6184573 Pu Feb 2001 B1
6194777 Abbott et al. Feb 2001 B1
6197615 Song et al. Mar 2001 B1
6198171 Huang et al. Mar 2001 B1
6201186 Daniels et al. Mar 2001 B1
6201292 Yagi et al. Mar 2001 B1
6204554 Ewer et al. Mar 2001 B1
6208020 Minamio et al. Mar 2001 B1
6208021 Ohuchi et al. Mar 2001 B1
6208023 Nakayama et al. Mar 2001 B1
6211462 Carter, Jr. et al. Apr 2001 B1
6218731 Huang et al. Apr 2001 B1
6222258 Asano et al. Apr 2001 B1
6222259 Park et al. Apr 2001 B1
6225146 Yamaguchi et al. May 2001 B1
6229200 Mclellan et al. May 2001 B1
6229205 Jeong et al. May 2001 B1
6239367 Hsuan et al. May 2001 B1
6239384 Smith et al. May 2001 B1
6242281 Mclellan et al. Jun 2001 B1
6256200 Lam et al. Jul 2001 B1
6258629 Niones et al. Jul 2001 B1
6281566 Magni Aug 2001 B1
6281568 Glenn et al. Aug 2001 B1
6282095 Houghton et al. Aug 2001 B1
6285075 Combs et al. Sep 2001 B1
6291271 Lee et al. Sep 2001 B1
6291273 Miyaki et al. Sep 2001 B1
6294100 Fan et al. Sep 2001 B1
6294830 Fjelstad Sep 2001 B1
6295977 Ripper et al. Oct 2001 B1
6297548 Moden et al. Oct 2001 B1
6303984 Corisis Oct 2001 B1
6303997 Lee Oct 2001 B1
6307272 Takahashi et al. Oct 2001 B1
6309909 Ohgiyama Oct 2001 B1
6316822 Venkateshwaran et al. Nov 2001 B1
6316838 Ozawa et al. Nov 2001 B1
6323550 Martin et al. Nov 2001 B1
6326243 Suzuya et al. Dec 2001 B1
6326244 Brooks et al. Dec 2001 B1
6326678 Karnezos et al. Dec 2001 B1
6335564 Pour Jan 2002 B1
6337510 Chun-Jen et al. Jan 2002 B1
6339255 Shin Jan 2002 B1
6348726 Bayan et al. Feb 2002 B1
6355502 Kang et al. Mar 2002 B1
6369447 Mori Apr 2002 B2
6369454 Chung Apr 2002 B1
6373127 Baudouin et al. Apr 2002 B1
6380048 Boon et al. Apr 2002 B1
6384472 Huang May 2002 B1
6388311 Nakashima et al. May 2002 B1
6388336 Venkateshwaran et al. May 2002 B1
6395578 Shin et al. May 2002 B1
6400004 Fan et al. Jun 2002 B1
6410979 Abe Jun 2002 B2
6414385 Huang et al. Jul 2002 B1
6420779 Sharma et al. Jul 2002 B1
6429508 Gang Aug 2002 B1
6437429 Su et al. Aug 2002 B1
6444499 Swiss et al. Sep 2002 B1
6448633 Yee et al. Sep 2002 B1
6452279 Shimoda Sep 2002 B2
6459148 Chun-Jen et al. Oct 2002 B1
6464121 Reijnders Oct 2002 B2
6476469 Huang et al. Nov 2002 B2
6476474 Hung Nov 2002 B1
6482680 Khor et al. Nov 2002 B1
6498099 McLellan et al. Dec 2002 B1
6498392 Azuma Dec 2002 B2
6507096 Gang Jan 2003 B2
6507120 Lo et al. Jan 2003 B2
6534849 Gang Mar 2003 B1
6545332 Huang Apr 2003 B2
6545345 Glenn et al. Apr 2003 B1
6559525 Huang May 2003 B2
6566168 Gang May 2003 B2
6583503 Akram et al. Jun 2003 B2
6667546 Huang et al. Dec 2003 B2
6713849 Hasebe et al. Mar 2004 B2
20010008305 McLellan et al. Jul 2001 A1
20010014538 Kwan et al. Aug 2001 A1
20020011654 Kimura Jan 2002 A1
20020027297 Ikenaga et al. Mar 2002 A1
20020140061 Lee Oct 2002 A1
20020140068 Lee et al. Oct 2002 A1
20020163015 Lee et al. Nov 2002 A1
20030030131 Lee et al. Feb 2003 A1
20030073265 Hu et al. Apr 2003 A1
Foreign Referenced Citations (67)
Number Date Country
19734794 Aug 1997 DE
5421117 Jun 1979 EP
5950939 Mar 1984 EP
0393997 Oct 1990 EP
0459493 Dec 1991 EP
0720225 Mar 1996 EP
0720234 Mar 1996 EP
0794572 Oct 1997 EP
0844665 May 1998 EP
0936671 Aug 1999 EP
098968 Mar 2000 EP
1032037 Aug 2000 EP
55163868 Dec 1980 JP
5745959 Mar 1982 JP
58160095 Aug 1983 JP
59208756 Nov 1984 JP
59227143 Dec 1984 JP
60010756 Jan 1985 JP
60116239 Aug 1985 JP
60195957 Oct 1985 JP
60231349 Nov 1985 JP
6139555 Feb 1986 JP
629639 Jan 1987 JP
63067762 Mar 1988 JP
63205935 Aug 1988 JP
63233555 Sep 1988 JP
63249345 Oct 1988 JP
63316470 Dec 1988 JP
64054749 Mar 1989 JP
1106456 Apr 1989 JP
1175250 Jul 1989 JP
1205544 Aug 1989 JP
1251747 Oct 1989 JP
3177060 Aug 1991 JP
4098864 Sep 1992 JP
5129473 May 1993 JP
5166992 Jul 1993 JP
5283460 Oct 1993 JP
692076 Apr 1994 JP
6140563 May 1994 JP
6260532 Sep 1994 JP
7297344 Nov 1995 JP
7312405 Nov 1995 JP
864634 Mar 1996 JP
8083877 Mar 1996 JP
8125066 May 1996 JP
8222682 Aug 1996 JP
8306853 Nov 1996 JP
98205 Jan 1997 JP
98206 Jan 1997 JP
98207 Jan 1997 JP
992775 Apr 1997 JP
9293822 Nov 1997 JP
10022447 Jan 1998 JP
10163401 Jun 1998 JP
10199934 Jul 1998 JP
10256240 Sep 1998 JP
00150765 May 2000 JP
556398 Oct 2000 JP
2001060648 Mar 2001 JP
200204397 Aug 2002 JP
941979 Jan 1994 KR
9772358 Nov 1997 KR
100220154 Jun 1999 KR
0049944 Jun 2002 KR
9956316 Nov 1999 WO
9967821 Dec 1999 WO
Continuations (1)
Number Date Country
Parent 09436158 Nov 1999 US
Child 10737572 US