SEMICONDUCTOR PACKAGES WITH MULTIPLE TYPES OF CONDUCTIVE COMPONENTS

Abstract
A semiconductor package comprises: a package substrate having a front surface and a rear surface, wherein the package substrate comprises: a plurality sets of front conductive patterns formed on the front surface; and a plurality sets of interconnects electrically coupled to the plurality sets of front conductive patterns, respectively; a plurality of electronic components mounted to the front surface of the package substrate and electrically coupled to the plurality sets of front conductive patterns via a plurality sets of front conductive components, respectively; wherein the plurality sets of conductive components at least comprise a set of first-type conductive components and a set of second-type conductive components, wherein the set of first-type conductive components are connected to a first electronic component of the plurality of electronic components, and the set of second-type conductive components are connected to a second electronic component of the plurality of electronic components; and wherein a thermal conductivity of the first-type conductive components is higher than the second-type conductive components, and a power consumption of the first electronic component is higher than the second electronic component.
Description
TECHNICAL FIELD

The present application generally relates to semiconductor technologies, and more particularly, to a semiconductor package with multiple types of conductive components.


BACKGROUND OF THE INVENTION

The wiring used for interconnection within a semiconductor chip is extremely fine, being of the order of a few microns, or less, in width. The ability to form such wires has made possible for semiconductor chips containing millions or more interconnected components. At some point, however, contacts are required between the chips and the outside world where working to such small tolerances of wiring is not possible.


In order for connecting semiconductor chips to external devices or systems, printed circuit boards (PCB), interposers, or other similar substrates are widely used for mounting the chips thereon, thereby forming semiconductor packages having bigger sizes. The wiring on a PCB is much coarser than on a chip, being typically measured in millimeters. It is not practical to connect chip wiring directly to PCB wiring. Therefore, an intermediate structure, capable of handling both ends of this wire-width spectrum, is needed.


An example of such a structure is a ball grid array (BGA). BGA packaging technology is a surface mounting technology applied to integrated circuits, which is commonly used to permanently fix devices such as microprocessors. The BGA package is an array on the bottom of a package substrate, and solder balls are used as input/output (I/O) terminals of the circuits and connected to a PCB.


The solder ball has the function of signal conduction, electrical connection, and heat conduction. In the existing BGA package, the solder balls on the package substrate are generally the same. The larger the solder ball, the stronger the heat transfer capability. However, at the same time, the larger the solder ball, the larger the substrate area occupied, which is contrary to the high density and high pin output of the BGA.


Therefore, a need exists for further improvement to semiconductor packages.


SUMMARY OF THE INVENTION

An objective of the present application is to provide a semiconductor package structure with improved heat dissipation efficiency.


According to an aspect of the present application, a semiconductor package is disclosed. The semiconductor package comprises: a package substrate having a front surface and a rear surface, wherein the package substrate comprises: a plurality sets of front conductive patterns formed on the front surface; and a plurality sets of interconnects electrically coupled to the plurality sets of front conductive patterns, respectively; a plurality of electronic components mounted to the front surface of the package substrate and electrically coupled to the plurality sets of front conductive patterns via a plurality sets of front conductive components, respectively; wherein the plurality sets of front conductive components at least comprise a set of first-type conductive components and a set of second-type conductive components, wherein the first-type conductive components are connected to a first electronic component of the plurality of electronic components, and the second-type conductive components are connected to a second electronic component of the plurality of electronic components; and wherein a thermal conductivity of the first-type conductive components is higher than that of the second-type conductive components, and a power consumption of the first electronic component is higher than that of the second electronic component.


According to another aspect of the present application, a semiconductor package is disclosed. The semiconductor package comprises: a package substrate having a front surface and a rear surface, wherein the package substrate comprises: a plurality sets of front conductive patterns formed on the front surface; and a plurality sets of interconnects electrically coupled to the plurality sets of front conductive patterns, respectively; an electronic component package mounted to the front surface of the package substrate and electrically coupled to the plurality sets of front conductive patterns via a plurality sets of front conductive components, respectively; wherein the electronic component package comprises a plurality of circuit functional parts, wherein the plurality sets of front conductive components at least comprise a set of first-type conductive components and a set of second-type conductive components, wherein the set of first-type conductive components are connected to a first circuit functional part of the plurality of circuit functional parts, and the set of second-type conductive components are connected to a second circuit functional part of the plurality of circuit functional parts; and wherein a thermal conductivity of the first-type conductive components is higher than the second-type conductive components, and a power consumption of the first circuit functional part is higher than that of the second circuit functional part.


It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only, and are not restrictive of the invention. Further, the accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.





BRIEF DESCRIPTION OF DRAWINGS

The drawings referenced herein form a part of the specification. Features shown in the drawing illustrate only some embodiments of the application, and not of all embodiments of the application, unless the detailed description explicitly indicates otherwise, and readers of the specification should not make implications to the contrary.



FIGS. 1 to 3 illustrate a semiconductor package according to an embodiment of the present application. FIG. 1 is a cross-sectional view of the package. FIG. 2 is a front view of the package substrate and FIG. 3 is a rear view of the package substrate.



FIGS. 4 and 5 illustrate a semiconductor package according to another embodiment of the present application. FIG. 4 is a cross-sectional view of the package substrate. FIG. 5 is a rear view of the package substrate.



FIGS. 6 and 7 illustrate a semiconductor package according to another embodiment of the present application. FIG. 6 is a cross-sectional view of the package substrate. FIG. 7 is a rear view of the package substrate.



FIG. 8 illustrates a semiconductor package according to another embodiment of the present application.





The same reference numbers will be used throughout the drawings to refer to the same or like parts.


DETAILED DESCRIPTION OF THE INVENTION

The following detailed description of exemplary embodiments of the application refers to the accompanying drawings that form a part of the description. The drawings illustrate specific exemplary embodiments in which the application may be practiced. The detailed description, including the drawings, describes these embodiments in sufficient detail to enable those skilled in the art to practice the application. Those skilled in the art may further utilize other embodiments of the application, and make logical, mechanical, and other changes without departing from the spirit or scope of the application. Readers of the following detailed description should, therefore, not interpret the description in a limiting sense, and only the appended claims define the scope of the embodiment of the application.


In this application, the use of the singular includes the plural unless specifically stated otherwise. In this application, the use of “or” means “and/or” unless stated otherwise. Furthermore, the use of the term “including” as well as other forms such as “includes” and “included” is not limiting. In addition, terms such as “element” or “component” encompass both elements and components including one unit, and elements and components that include more than one subunit, unless specifically stated otherwise. Additionally, the section headings used herein are for organizational purposes only, and are not to be construed as limiting the subject matter described.


As used herein, spatially relative terms, such as “beneath”, “below”, “above”, “over”, “on”, “upper”, “lower”, “left”, “right”, “vertical”, “horizontal”, “side” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. It should be understood that when an element is referred to as being “connected to” or “coupled to” another element, it may be directly connected to or coupled to the other element, or intervening elements may be present.


The inventors of the present application have found that, due to increased integration, many semiconductor packages will mount multiple semiconductor chips to a same substrate, or mount an electronic component package integrated with multiple circuit functional parts to a same substrate. These different semiconductor chips or circuit functional parts often have different power consumption, which leads to different requirements of heat dissipation capabilities. When heat is generated by the semiconductor chips and the package, most of the heat is transferred to the outside of the semiconductor packages through the package substrate where they are located. But the package structures are generally made of epoxy resin and filler and other low thermal conductivity materials. Therefore, when the semiconductor chips, due to a long time of operation, produce a lot of heat, the package structures may not be able to conduct heat in time, resulting in the heat being trapped in the chips.


In order to resolve at least one of the problems described above, a multiple-type conductive component array is proposed by the inventors of the present application to interconnect electronic component or electronic component package with package substrates. For example, solder balls with copper cores or similar higher thermal conductivity materials may be used, as well as solder balls made of lower thermal conductivity soldering material such as tin. These high thermal conductivity conductive components may establish thermal paths with improved heat dissipation capability for the semiconductor package, thereby reducing significantly the risk of failures of the semiconductor packages due to accumulated heat.



FIGS. 1 to 3 illustrate a semiconductor package 100 according to an embodiment of the present application. FIG. 1 is a cross sectional view of the semiconductor package 100, FIG. 2 is a front view of a package substrate of the semiconductor package 100 and FIG. 3 is a rear view of the package substrate of the semiconductor package 100.


As shown in FIG. 1, the semiconductor package 100 includes a package substrate 125 having a front surface 119 and a rear surface 129. The package substrate 125 may include one or more insulating layers, which may be interleaved with one or more conductive layers. It can be appreciated that the package substrate 125 can include any number of conductive and insulating layers interleaved over each other. The insulating layer may include ceramic, plastic, glass, or any other suitable insulating materials. The conductive layers, along with other internal conductive structures such as vias, form interconnects 130 embedded within the package substrate 125. The interconnects 130 may be formed of copper, for example.


The package substrate 125 further includes a set of front conductive patterns 110, such as contact pads, formed on the front surface 119, and a set of rear conductive patterns 120, such as contact pads, formed on the rear surface 129. The front and rear conductive patterns may be respective end surfaces of a set of interconnect s 130 embedded in the insulating layer of the package substrate 125, which are exposed from either the front surface 119 or the rear surface 129. The set of interconnects 130 can electrically couple the set of front conductive patterns 110 with the set of rear conductive patterns 120, respectively. In some embodiments, the interconnects 130 may include conductive wiring or vias to route signals through the insulating layer, as aforementioned.


At least one electronic component 115 is mounted to the front surface 119 of the package substrate 125. The electronic component or components can be in the form of a semiconductor die or dice. In some embodiments, the at least one electronic component 115 may include one or more digital chips, analog chips or mixed signal chips, such as application-specific integrated circuit (“ASIC”) chips, sensor chips, wireless and radio frequency (RF) chips, memory chips, logic chips, or voltage regulator chips. In some other embodiments, the at least one electronic component 115 may also include one or more passive electrical components such as resistors, capacitors, inductors, etc. In the embodiment shown in FIG. 1, the electronic component 115 is a semiconductor die or chip with multiple input/output ports, each of which is required to be electrically coupled to an external device for signal or power transmission.


The semiconductor package 100 further includes a set of front solder balls 210 and a set of rear solder balls 220. As front conductive components and rear conductive components, front solder balls 210 and rear solder balls 220 are electrically connected to the set of front and rear conductive patterns 110, 120, respectively. The electronic component 115 is electrically coupled to the set of front conductive patterns 110 via the set of front solder balls 210 to establish electrical connection with the package substrate 125.


In particular, the front and rear solder balls 210 and 220 can be deposited on the package substrate 125 in the form of balls or similar structures. As can be seen from FIG. 1, a first pitch between two adjacent solder balls of the front solder balls 210 can be increased to a second pitch between two adjacent solder balls of the rear solder balls 220, because there is more space on the package substrate 125, especially when the interconnects 130 can provide for redistribution of the wiring. Accordingly, the set of rear solder balls 220 may have a size that is greater than a size of the set of front solder balls 210. In other words, the layout of the solder balls on the rear surface 129 is exaggerated than the layout of the solder balls on the front surface 119. The bigger layout of solder balls allows for possibility of better heat dissipation. In some embodiments, the number of solder balls in the set of front solder balls 210 may be equal to the number of solder balls in the set of rear solder balls 220 as illustrated in the embodiments of FIGS. 1 to 3. In a variant, for example as illustrated further in the embodiment of FIGS. 4 and 5, the number of solder balls in the set of front solder balls 410 and the number of solder balls in the set of rear solder balls 420 are different, for example, because two or more of the solder balls in a set may be coupled to another certain solder ball.


The set of front solder balls 210 include at least two types of solder balls, i.e., a plurality of first-type solder balls 111 and a plurality of second-type solder balls 112. Similarly, the set of rear solder balls 220 include at least two types of solder balls, i.e., a plurality of first-type solder balls 121 and a plurality of second-type solder balls 122. In the illustrated embodiments, the first-type solder balls 111, 121 can include a copper core and a soldering material coating outside the copper core, while the second-type solder balls 112, 122 can be made solely of the soldering material such as tin. In some other embodiments, the first-type solder balls 111, 121 may be made of other soldering material(s) that have better thermal conductivity. Compared to the second-type solder balls 112, 122, the first-type solder balls 111, 121 may have a greater thermal and electrical conductivity, therefore allowing better heat conductivity and lower electrical resistance. In some embodiments, the first-type solder balls 111, 121 are preferably located in a region of the electronic component 115 that consumes more power and generate more heat than the other regions of the electronic component 115, because more heat is required to be conducted through the first-type solder balls 111, 121. In some embodiments, the electronic component 115 is a semiconductor chip, which may have different circuit functional parts, such as a logic circuit part, a power circuit part, a control circuit part or a storage circuit part and so on. Among them, because complex operations such as logic operations are required, the logic circuit part usually has a relatively high power consumption; and the power circuit part usually also has a relatively high power consumption due to power supply and other requirements; while the control circuit or storage circuit has a relatively low power consumption. Therefore, the first-type solder balls 111 and/or 121 can be arranged in a region of the electronic component 115 corresponding to the logic circuit part, the power circuit part, while the second-type solder balls 112 and/or 122 can be arranged in the region of the electronic component 115 corresponding to the control circuit or the storage circuit. In some other embodiments, the first-type solder balls 111, 121 are preferably located in a region of the electronic component 115 that needs better heat dissipation than the other regions of the electronic component 115. For example, the first-type solder balls 111, 121 are at least located in a central region of the package substrate 125, which may have the longest heat dissipation path than the other regions (e.g., peripheral regions) of the package substrate 125. Furthermore, as mentioned above, the first-type solder ball 121 on the back side of the package substrate 125 can further improve the heat transfer capability of the semiconductor package 100, especially for those regions that require better heat dissipation.


Although thermal conductivity may be a factor desired to be considered for the multiple types of solder balls mounted on the package substrate 125, some other factors or characteristics may be considered as well. In some embodiments, at least one set of the sets of front solder balls 210 and the set of rear solder balls 220 may further include one or more third-type solder balls, which may be made at least partially of a material having a thermal expansion coefficient smaller than the first-type solder balls and the second-type solder balls, or at least close to the substrate material (for example, resin) of the package substrate 125. For example, in the embodiment shown in FIG. 1, each set of the set of front solder balls 210 and the set of rear solder balls 220 includes a plurality of third-type solder balls 113, 123. The third-type solder balls 113 and 123 both include a resin core coated by a soldering material. Such a type of solder balls allows to provide mechanical support and compensate mechanical stress produced within the semiconductor package 100, for example due to thermal expansion, because the resin core may compensate mechanical stress significantly. In some embodiments, the third-type solder balls are for example arranged in a region of the package substrate 125 where the density of the interconnects 130 is higher than in other regions, because denser interconnects may generate greater mechanical stress that needs to be compensated. For example, as shown in FIGS. 2 and 3, the third-type solder balls 123 of the set of rear solder balls 220 may be arranged surrounding the first-type solder balls 121 of the set of rear solder balls 220. Accordingly, the second-type solder balls 122 may be arranged at the corners surrounding the first-type solder balls 121 and the third-type of solder balls 123. In some other embodiments, the third-type solder balls may also be arranged on the package substrate 125 in a region in connection with the circuit functional parts with relatively low power consumption. In one embodiment, the third-type solder balls 113 of the set of front solder balls 210 are arranged at the corners of the electronic component 115 to compensate mismatch in thermal expansion between the electronic component 115 and the package substrate 125. In addition, the third-type solder balls 113 at the corners of the electronic component 115 can maintain a proper distance between the electronic component 115 and the package substrate 125 after a reflow process of the solder balls, thereby allowing the passage of the encapsulant material and avoid the formation of voids or cavities in the encapsulant layer. In some embodiments, the third-type solder balls may be located in a region below the electronic component 115 where a maximum mechanical stress is to be produced during use of the semiconductor package 100. Furthermore, the second-type solder balls 112, 122 of the set of front or rear solder balls may be formed at the other positions of the package substrate 125 to complete a BGA structure, for example.


In some preferred embodiments, such as the embodiment shown in FIGS. 1 to 3, each solder ball of the rear solder balls 220 is coupled to at least one solder ball of the front solder balls 210 via at least a pair of front and rear conductive patterns 110, 120 and interconnects 130 therebetween. In the embodiment of FIG. 1, each first-type solder ball 121 of the set of rear solder balls 220 is aligned vertically with one first-type solder ball 111 of the set of front solder balls 210, when viewed in a direction perpendicular to the front or rear surface 119, 129 of the package substrate 125. Accordingly, an interconnect path 150 connecting each first-type solder ball 121 of the set of rear solder balls 220 to one first-type solder ball 111 of the set of front solder balls 210 is substantially perpendicular to the package substrate 125. In this way, the interconnect path 150 connecting a first-type solder ball 121 of the set of rear solder balls 220 to a first-type solder ball 111 of the set of front solder balls 210 has a shorter total length of wiring or vias, and preferably a greater width, than other interconnect paths 160 interconnecting a second-type or a third-type solder ball of the set of rear solder balls 220 to a solder ball of the set of front solder balls 210, or interconnecting a second-type or a third-type solder ball of the set of front solder balls 210 to a solder ball of the set of rear solder balls 220. The interconnect path 150 has accordingly a better thermal and electrical conductivity, which may be helpful for heat dissipation for the region of the electronic component 115 that produce more heat during operation. It can be appreciated that, in some alternative embodiments, the interconnect path 150 connecting each first-type solder ball 121 of the set of rear solder balls 220 to one first-type solder ball 111 of the set of front solder balls 210 may not be perpendicular to the package substrate 125, because of the routing of the interconnects 130 in the package substrate 125 or other considerations. Nevertheless, the use of first-type solder balls 111 and 121 on both sides of the package substrate 125 allows for better heat transfer capability.


The semiconductor package 100 may further include at least one encapsulant layer 116 extending at least partially on the substrate 125 and covering the at least one electronic component 115. The encapsulant layer 116 may provide protection for the electronic component 115. In some embodiments, a shielding layer (not shown) may be further formed over the encapsulant layer 116 for electromagnetic interference shielding purpose.



FIGS. 4 and 5 illustrate a semiconductor package 400 according to another embodiment of the present application. As shown in FIGS. 4 and 5, three electronic components 415 are encapsulated within the semiconductor package 400. In particular, the electronic component 415 includes a plurality of electronic components, such as semiconductor dice, such as a control chip, a logic circuit chip, and a power chip.


In the embodiment, a set of front solder balls 410 is mounted on a front surface of a package substrate 425. The set of front solder balls 410 include, at a central region of the package substrate 425 below the logic circuit chip, a plurality of first-type solder balls 411, for electrical and thermal conduction, coupled respectively to a first-type solder ball 421 belonging to a set of rear solder balls 420 which are mounted on a rear surface of the package substrate 425. The set of front solder balls 410 further includes, below the power chip, a plurality of first-type solder balls 411, for high current transmission, coupled respectively to second-type and third-type solder balls 422 and 423 belonging to the set of rear solder balls 420. The set of front solder balls 410 further includes, below the control chip, a plurality of second-type solder balls 412, for weak current transmission, coupled respectively to second-type and third-type solder balls 422 and 423 belonging to the set of rear solder balls 420. It can be understood that, compared with the control circuit chip connected by the second-type solder balls 412, the logic circuit chip and the power circuit chip connected by the first-type solder balls 411 have significantly higher power consumption, therefore, the first-type solder balls 411 having relatively high thermal conductivity can better assist logic circuit chip and power circuit chip to dissipate heat through the package substrate 425.


As illustrated in FIG. 4, the interconnect path 450 connecting each first-type solder ball 421 of the set of rear solder balls 420 to a corresponding first-type solder ball 411 of the set of front solder balls 410 is substantially perpendicular to the front surface 419 or the rear surface 429 of the package substrate 425, and thus may be shorter than another interconnect path 460 connecting a second-type or third-type solder ball 422, 423 of the set of rear solder balls 420 to a solder ball of the set of front solder balls 410. As shown in FIG. 5, the first-type solder balls 421 of the set of rear solder balls 420 are surrounded by the second-type solder balls 422 and the third-type solder balls 423 of the set of rear solder balls 420 distributed at intervals. The second-type solder balls 422 may be formed at the other positions in a region of the package substrate 425 to complete the BGA structure.


In some embodiments, the electronic components encapsulated in the semiconductor packages may be other components such as chip-lets or other similar smaller packages.



FIGS. 6 and 7 illustrate a semiconductor package 600 according to another embodiment of the present application. As shown in FIGS. 6 and 7, an electronic component 615 which in the form of a chip-let is mounted on a front surface of a package substrate 625 of the semiconductor package 600. The chip-let may include, as illustrated, several circuit functional modules, for example a System of Chip (SoC), a High-bandwidth Memory (HBM), and a central processing unit (CPU) module. These circuit functional modules are packaged in the semiconductor package 600 as the respective circuit functional parts of the semiconductor package 600.


Similar as the embodiment shown in FIGS. 4 and 5, different types of conductive components may be mounted on the front and rear surfaces of the package substrate 625 depending on which circuit functional part of the electronic component 615 is connected to the conductive component. For example, a set of front conductive components, such as solder balls 610, are mounted to a front surface of the package substrate 625. The front solder balls 610 include, below a logic circuit functional region below a central region of the package substrate 625, a plurality of first-type solder balls 611 coupled respectively to a first-type solder ball 621 belonging to the set of rear solder balls 620 to provide better thermal and electrical conductivity. The first-type solder balls 611 and 621 may include a copper core and a soldering material coating outside the copper core. Other types of solder balls such as second-type solder balls 622 made of tin and third-type solder ball 623 including a resin core and a soldering material coating outside the resin core may be mounted on the package substrate 625, in a manner similar to the semiconductor package 100 shown in FIGS. 1 to 3, which will not be elaborated herein.



FIG. 8 shows a semiconductor package 800 according to another embodiment of the present application. As shown in FIG. 8, three electronic components 815 are packaged in a same semiconductor package 800. Specifically, the three electronic components 815 include a logic circuit chip, a control chip and a power chip. In this embodiment, front conductive components 810 are mounted to the front surface 819 of the package substrate 825 for respectively mounting the electronic components 815 to the front surface 819. Rear conductive components 820 are mounted to the rear surface of the package substrate 825 for attaching the package substrate 825 to other substrates or devices.


In some examples, the front conductive components 810 may employ multiple different types of components to connect different electronic components 815 to the package substrate 825, specifically, to respective interconnect paths 850 in the package substrate 825. Specifically, the front conductive component 810 includes a first-type solder ball 811 under the power chip, a second-type solder ball 812 under the control chip, and a plurality of conductive pillars 813 under the logic circuit chip in the central region of the package substrate 825. It can be seen that, compared with the semiconductor package 400 shown in FIG. 4 and FIG. 5, the front conductive components 810 include more types of conductive components, especially for logic circuit chips, conductive pillars 813 are specially provided to connect them to the package substrate 825. The conductive pillars 813 may be, for example, copper pillars or similar conductive structure made of a high thermal conductivity material. The reason why the conductive pillars 813 are used is that an input/output pin density of the logic circuit chip is high, and heat generated during operation is relatively high, and using the conductive pillar 813 to connect the chip pin and the package substrate can enhance the bonding strength between the pins and the package substrate 825 and prevent the solder joints from breaking due to external forces by strengthening the soldering process.


It can be understood that, similar to the semiconductor package 400 shown in FIG. 4 and FIG. 5, in the embodiment shown in FIG. 8, multiple first-type solder balls 811 below the power chip can be used for high current commission, the multiple first-type solder balls 811 can be solder balls having a copper core and a solder material coating outside the copper core, or other solder balls with better thermal conductivity and electrical conductivity. The second-type solder balls 812 can be made entirely of a solder material (such as tin), or further, a resin core or similar structure may be configured inside the solder material, or the multiple first-type solder balls 811 can be other solder balls with a lower thermal conductivity and electrical conductivity relative to the first-type solder balls 811. In particular, for solder balls with resin cores or similar structures, the reduction in the amount of metal can reduce the thermal expansion coefficient of the solder balls, thereby reducing the shear stress generated under temperature changes, and avoiding solder joints from breaking due to excessive shear stress.


For the rear conductive components 820, rear solder balls 420 similar to those shown in FIG. 4 and FIG. 5 can be used, or the same type of solder balls can also be used.


It can be seen that different types of electronic components 815 are connected through a variety of different types of conductive components 810, especially according to the heat dissipation requirements of different types of chips, which can satisfy the requirement of these electronic components 815 to achieve better heat dissipation, thereby improving the reliability of the overall semiconductor package. It should be noted that although a plurality of electronic components 815 are shown in FIG. 8, and different types of conductive components are used for the electronic components 815 to connect them to the package substrate, but in some other embodiments, especially for relatively large-sized electronic components (such as chiplets shown in FIG. 6), different regions therein may have different functions, and these functions make these regions have different heat dissipation requirements. Similarly, for regions with relatively high heat dissipation requirements (such as logic circuit functional region), conductive components with relatively higher thermal conductivities and electrical conductivities can be used, and for regions with relatively low heat dissipation requirements, such as storage functional regions, conductive components with relatively lower thermal conductivities and electrical conductivities can be used.


While the semiconductor package of the present application is described in conjunction with corresponding figures, it will be understood by those skilled in the art that modifications and adaptations to the semiconductor package may be made without departing from the scope of the present invention.


The discussion herein includes numerous illustrative figures that show various portions of a semiconductor package. For illustrative clarity, such figures do not show all aspects of each example semiconductor package. Any of the example semiconductor packages provided herein may share any or all characteristics with any or all other semiconductor packages provided herein.


Various embodiments have been described herein with reference to the accompanying drawings. It will, however, be evident that various modifications and changes may be made thereto, and additional embodiments may be implemented, without departing from the broader scope of the invention as set forth in the claims that follow. Further, other embodiments will be apparent to those skilled in the art from consideration of the specification and practice of one or more embodiments of the invention disclosed herein. It is intended, therefore, that this application and the examples herein be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following listing of exemplary claims.

Claims
  • 1. A semiconductor package, comprising: a package substrate having a front surface and a rear surface, wherein the package substrate comprises:a plurality sets of front conductive patterns formed on the front surface; and a plurality sets of interconnects electrically coupled to the plurality sets of front conductive patterns, respectively;a plurality of electronic components mounted to the front surface of the package substrate and electrically coupled to the plurality sets of front conductive patterns via a plurality sets of front conductive components, respectively;wherein the plurality sets of front conductive components at least comprise a set of first-type conductive components and a set of second-type conductive components, wherein the first-type conductive components are connected to a first electronic component of the plurality of electronic components, and the second-type conductive components are connected to a second electronic component of the plurality of electronic components; andwherein a thermal conductivity of the first-type conductive components is higher than that of the second-type conductive components, and a power consumption of the first electronic component is higher than that of the second electronic component.
  • 2. The semiconductor package of claim 1, wherein the first-type conductive components comprise a conductive copper pillar, or a conductive solder ball having a copper core and a soldering material coating outside the copper core.
  • 3. The semiconductor package of claim 2, wherein the second-type conductive components comprise a conductive solder ball without a copper core.
  • 4. The semiconductor package of claim 3, wherein the second-type conductive components comprise a tin solder ball, or a conductive solder ball having a resin core and a soldering material coating outside the resin core.
  • 5. The semiconductor package of claim 1, wherein the first electronic component comprises a logic circuit electronic component or a power circuit electronic component, and the second electronic component comprises a control circuit electronic component.
  • 6. The semiconductor package of claim 1, wherein the package substrate further comprises a plurality sets of rear conductive patterns formed on the rear surface, and are electrically coupled with the plurality sets of front conductive patterns via the plurality sets of interconnects; wherein the semiconductor package further comprises a plurality sets of rear conductive components, and the plurality sets of rear conductive components are respectively connected with the plurality sets of rear conductive patterns.
  • 7. The semiconductor package of claim 6, wherein the plurality sets of rear conductive components at least comprise a plurality sets of second-type conductive components.
  • 8. The semiconductor package of claim 7, wherein the plurality sets of rear conductive components at least comprise a set of first-type conductive components and a set of second-type conductive components.
  • 9. A semiconductor package, comprising: a package substrate having a front surface and a rear surface, wherein the package substrate comprises: a plurality sets of front conductive patterns formed on the front surface; anda plurality sets of interconnects electrically coupled to the plurality sets of front conductive patterns, respectively;an electronic component mounted to the front surface of the package substrate and electrically coupled to the plurality sets of front conductive patterns via a plurality sets of front conductive components, respectively;wherein the electronic component comprises a plurality of circuit functional parts, wherein the plurality sets of front conductive components at least comprise a set of first-type conductive components and a set of second-type conductive components, wherein the first-type conductive components are connected to a first circuit functional part of the plurality of circuit functional parts, and the second-type conductive components are connected to a second circuit functional part of the plurality of circuit functional parts; andwherein a thermal conductivity of the first-type conductive components is higher than that of the second-type conductive components, and a power consumption of the first circuit functional part is higher than that of the second circuit functional part.
  • 10. The semiconductor package of claim 9, wherein the first-type conductive components comprise a conductive copper pillar, or comprise a conductive solder ball having a copper core and a soldering material coating outside the copper core.
  • 11. The semiconductor package of claim 10, wherein the second-type conductive components comprise conductive a solder ball without a copper core.
  • 12. The semiconductor package of claim 11, wherein the second-type conductive components comprise a tin solder ball, or a conductive solder ball having a resin core and a soldering material coating outside the resin core.
  • 13. The semiconductor package of claim 9, wherein the first circuit functional part comprises a logic circuit or a power circuit, and the second circuit functional part comprises a control circuit.
  • 14. The semiconductor package of claim 9, wherein the package substrate further comprises a plurality sets of rear conductive patterns formed on the rear surface, and are electrically coupled with the plurality sets of front conductive patterns via the plurality sets of interconnects; wherein the semiconductor package further comprises a plurality sets of rear conductive components, and the plurality sets of rear conductive components are respectively connected with the plurality sets of rear conductive patterns.
  • 15. The semiconductor package of claim 14, wherein the plurality sets of rear conductive components at least comprise a plurality sets of second-type conductive components.
  • 16. The semiconductor package of claim 15, wherein the plurality sets of rear conductive components at least comprise a set of first-type conductive components and a set of second-type conductive components.
  • 17. The semiconductor package of claim 9. wherein the electronic component is a semiconductor die or a semiconductor package.
Priority Claims (1)
Number Date Country Kind
202310802142.9 Jun 2023 CN national