3372470

Information

• Patent Grant
• 3372470

• References
• Source

• Patent Number

  3,372,470

• Date Filed

  Not available

• Date Issued

  Tuesday, March 12, 1968
  56 years ago

• CPC

  • H01L24/45 - of an individual wire connector
  • H01L24/26 - Layer connectors
  • H01L24/43 - Manufacturing methods
  • H01L24/83 - using a layer connector
  • H01L39/02 - Details
  • H01L39/2409 - of devices comprising an intermetallic compound of type A-15
  • H01R4/68 - Connections to or between superconductive connectors
  • H01L2224/43 - Manufacturing methods
  • H01L2224/43848 - Thermal treatments
  • H01L2224/45015 - being circular
  • H01L2224/45101 - the principal constituent melting at a temperature of less than 400°C
  • H01L2224/45147 - Copper (Cu) as principal constituent
  • H01L2224/45173 - Rhodium (Rh) as principal constituent
  • H01L2224/45565 - Single coating layer
  • H01L2224/45639 - Silver (Ag) as principal constituent
  • H01L2224/45644 - Gold (Au) as principal constituent
  • H01L2224/45647 - Copper (Cu) as principal constituent
  • H01L2224/45669 - Platinum (Pt) as principal constituent
  • H01L2224/8319 - Arrangement of the layer connectors prior to mounting
  • H01L2224/83801 - Soldering or alloying
  • H01L2924/00014 - the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
  • H01L2924/01005 - Boron [B]
  • H01L2924/01006 - Carbon [C]
  • H01L2924/01013 - Aluminum [Al]
  • H01L2924/01015 - Phosphorus [P]
  • H01L2924/01019 - Potassium [K]
  • H01L2924/01023 - Vanadium [V]
  • H01L2924/01029 - Copper [Cu]
  • H01L2924/01031 - Gallium [Ga]
  • H01L2924/01033 - Arsenic [As]
  • H01L2924/0104 - Zirconium [Zr]
  • H01L2924/01041 - Niobium [Nb]
  • H01L2924/01042 - Molybdenum [Mo]
  • H01L2924/01045 - Rhodium [Rh]
  • H01L2924/01047 - Silver [Ag]
  • H01L2924/0105 - Tin [Sn]
  • H01L2924/01074 - Tungsten [W]
  • H01L2924/01075 - Rhenium [Re]
  • H01L2924/01078 - Platinum [Pt]
  • H01L2924/01079 - Gold [Au]
  • H01L2924/01082 - Lead [Pb]
  • H01L2924/01083 - Bismuth [Bi]
  • H01L2924/0132 - Binary Alloys
  • H01L2924/01322 - Eutectic Alloys
  • H01L2924/01327 - Intermediate phases
  • H01L2924/014 - Solder alloys
  • H01L2924/2076 - equal to or larger than 100 microns
  • Y10S428/93 - Electric superconducting
  • Y10S428/935 - Electroplating
  • Y10S428/938 - Vapor deposition or gas diffusion
  • Y10S428/94 - Pressure bonding
  • Y10S428/941 - Solid state alloying
  • Y10S505/813 - Wire, tape, or film
  • Y10S505/884 - Conductor
  • Y10S505/927 - Metallurgically bonding superconductive members
  • Y10S505/928 - Metal deforming
  • Y10T29/49014 - Superconductor
  • Y10T29/49069 - Data storage inductor or core
  • Y10T29/49071 - by winding or coiling
  • Y10T29/49915 - Overedge assembling of seated part
  • Y10T29/49925 - Inward deformation of aperture or hollow body wall
  • Y10T428/12646 - Group VIII or IB metal-base
  • Y10T428/1275 - Next to Group VIII or IB metal-base component
  • Y10T428/1291 - Next to Co-, Cu-, or Ni-base component

• US Classifications

  • 029 - Metal working
  • 228 - Metal fusion bonding
  • 257 - Active solid-state devices
  • 335 - Electricity: magnetically operated switches, magnets, and electromagnets
  • 505 - Superconductor technology: apparatus, material, process