The present disclosure relates to substrate processing systems, more particularly to edge coupling rings of substrate processing systems, and yet more particularly to detection systems for edge coupling rings of substrate processing systems. Still more particularly, the present disclosure relates to detection systems for detecting a position and/or condition of edge coupling rings of substrate processing systems.
The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.
Substrate processing systems may be used to perform etching and/or other treatment of substrates such as semiconductor wafers. A substrate may be arranged on a pedestal in a processing chamber of the substrate processing system. For example, during etching in a plasma etcher, a gas mixture including one or more precursors is introduced into the processing chamber and plasma is struck to etch the substrate.
Edge coupling rings have been used to adjust an etch rate and/or etch profile of the plasma near a radially outer edge of the substrate. The edge coupling ring is typically located on the pedestal around the radially outer edge of the substrate. Process conditions at the radially outer edge of the substrate can be modified by changing a position of the edge coupling ring, a shape or profile of an inner edge of the edge coupling ring, a height of the edge coupling ring relative to an upper surface of the substrate, a material of the edge coupling ring, etc.
Changing the edge coupling ring requires the processing chamber to be opened, which is undesirable. In other words, an edge coupling effect of the edge coupling ring cannot be altered without opening the processing chamber. When the edge coupling ring is eroded by plasma during etching, the edge coupling effect changes. Correcting erosion of the edge coupling ring requires the processing chamber to be opened in order to replace the edge coupling ring.
Referring now to
In
One or more portions of an edge coupling ring may be moved vertically and/or horizontally relative to a substrate or pedestal in a substrate processing system. The movement changes an edge coupling effect of the plasma relative to the substrate during etching or other substrate treatment without requiring the processing chamber to be opened.
Referring now to
An actuator 80 may be arranged in various locations to move one or more portions of the edge coupling ring 60 relative to the substrate 33 as will be described further below. For example only, in
During use, plasma 82 is directed at the substrate 33 to etch the exposed portions of the substrate 33. The edge coupling ring 60 is arranged to help shape the plasma electric field such that uniform etching of the substrate 33 occurs. As can be seen at 84 and 86 in
In
Referring now to
Rather than locating the actuator 110 between annular portions of the edge coupling ring, the actuator 110 may also be attached to a radially outer wall or other structure identified at 114. Alternately, the actuator 110 may be supported from below by a wall or other structure identified at 116.
Referring now to
Keeping the processing chamber closed can present difficulties in observing the condition of the edge coupling ring, and consequently in determining when to adjust the ring's position to compensate for erosion and when to replace the ring.
In addition, when replacing an edge coupling ring, there can be difficulties in positioning and/or aligning the edge coupling ring appropriately.
A substrate processing system includes a processing chamber. The processing chamber has a covered opening through which conditions in the chamber can be observed and/or measured, including the condition and/or position of an edge coupling ring that is arranged adjacent to a pedestal in the processing chamber and around a radially outer edge of the substrate. A detection system that detects the condition and/or position of the edge coupling ring is provided.
In one feature, the detection system includes a camera with optics suitable to permit observation of the condition of the edge coupling ring without opening the processing chamber.
In one feature, the apparatus includes a laser inferometer to measure the profile of the edge coupling ring without opening the processing chamber.
Depending on the observed condition and/or measurement, for example, in response to erosion of a plasma-facing surface of the edge coupling ring, an actuator is configured to selectively move a first portion of the edge coupling ring relative to the substrate to alter an edge coupling profile of the edge coupling ring, without requiring the processing chamber to be opened.
In other features, the actuator is configured to move the first portion of the edge coupling ring relative to a second portion of the edge coupling ring.
In other features, a controller is configured to move the edge coupling ring in response to erosion of a plasma-facing surface of the edge coupling ring. The controller automatically moves the edge coupling ring after the edge coupling ring is exposed to a predetermined number of etching cycles. The controller automatically moves the edge coupling ring after the edge coupling ring is exposed to a predetermined period of etching.
In other features, the actuator moves the first portion of the edge coupling ring vertically relative to the substrate. The actuator moves the first portion of the edge coupling ring horizontally relative to the substrate. A sensor or detector is configured to communicate with the controller and to detect the erosion of the edge coupling ring.
In other features, the detector is a camera mounted outside the processing chamber, and sighted on the edge coupling ring through a side view port of the chamber.
In other features, the camera may provide images or other information of the condition and/or position of the edge coupling ring using plasma lighting, or using external lighting. In other features, the external lighting may be provided through the same side view port through which the camera is sighted, or may be provided through a different side view port.
In other features, the detection system includes a controller that adjusts a position and/or focus of the camera. In other features, the controller that moves the actuator also adjusts the position and/or focus of the camera. The camera is configured to communicate with the controller, and the controller adjusts a position and/or focus of the camera. In response to edge coupling ring condition information from the camera, the controller operates the actuator to adjust a position of the edge coupling ring relative to the substrate. In response to edge coupling ring condition information from the camera, the controller operates the actuator to move the edge coupling ring vertically. In response to edge coupling ring position information from the camera, the controller operates the actuator to move the edge coupling ring horizontally. In response to edge coupling ring orientation information from the camera, the controller operates the actuator to move one side of the edge coupling ring relative to another side.
In other features, the robot is configured to communicate with the controller and to adjust a position of the sensor. The sensor includes a depth gauge. The sensor includes a laser interferometer. The actuator selectively tilts the edge coupling ring relative to the substrate. The actuator is located outside of the processing chamber. A rod member connects the actuator to the edge coupling ring through a wall of the processing chamber.
In other features, a seal is arranged between the rod member and the wall of the processing chamber. A controller is configured to move the edge coupling ring to a first position for a first treatment of the substrate using a first edge coupling effect and then to a second position for a second treatment of the substrate using a second edge coupling effect.
A method for adjusting an edge coupling profile of an edge coupling ring in a substrate processing system includes arranging an edge coupling ring adjacent to a pedestal in a processing chamber. The edge coupling ring is arranged around a radially outer edge of the substrate. The method includes selectively moving a first portion of the edge coupling ring relative to the substrate using an actuator to alter an edge coupling profile of the edge coupling ring.
In other features, the method includes delivering process gas and carrier gas to the processing chamber. The method includes creating plasma in the processing chamber to etch the substrate. The method includes moving the first portion of the edge coupling ring using the actuator without requiring the processing chamber to be opened. The edge coupling ring further comprises a second portion. The actuator is configured to move the first portion of the edge coupling ring relative the second portion of the edge coupling ring. The actuator is selected from a group consisting of a piezoelectric actuator, a stepper motor actuator, and a pneumatic drive actuator.
In other features, the method includes moving the edge coupling ring in response to erosion of a plasma-facing surface of the edge coupling ring. The method includes automatically moving the edge coupling ring after the edge coupling ring is exposed to a predetermined number of etching cycles. The method includes automatically moving the edge coupling ring after the edge coupling ring is exposed to a predetermined period of etching. The method includes moving the first portion of the edge coupling ring vertically relative to the substrate. The method includes moving the first portion of the edge coupling ring horizontally relative to the substrate.
In other features, the method includes moving the first portion of the edge coupling ring vertically relative to the substrate. The method includes moving the first portion of the edge coupling ring horizontally relative to the substrate. A sensor or detector is configured to communicate with the controller and to detect the erosion of the edge coupling ring.
In other features, the method includes using a camera to sense erosion of the edge coupling ring. The method includes adjusting a position of the edge coupling ring using images from the camera. The method includes operating the actuator to adjust a position of the edge coupling ring relative to the substrate in response to position information that the camera provides. The method includes operating the actuator to move the edge coupling ring vertically in response to information that the camera provides regarding a condition of the edge coupling ring. The method includes operating the actuator to move the edge coupling ring horizontally in response to information that the camera provides regarding a position of the edge coupling ring. The method includes operating the actuator to move one side of the edge coupling ring relative to another side in response to information that the camera provides regarding a position of the edge coupling ring.
In other features, the method includes using a sensor to sense erosion of the edge coupling ring. The sensor is selected from a group consisting of a depth gauge and a laser interferometer. The method includes selectively tilting the edge coupling ring relative to the substrate. The actuator is located outside of the processing chamber.
In other features, the method includes moving the edge coupling ring to a first position for a first treatment of the substrate using a first edge coupling effect and moving the edge coupling ring to a second position for a second treatment of the substrate using a second edge coupling effect.
Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.
The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:
In the drawings, reference numbers may be reused to identify similar and/or identical elements.
Referring now to
For example only, the upper electrode 504 may include a showerhead 509 that introduces and distributes process gases. The showerhead 509 may include a stem portion including one end connected to a top surface of the processing chamber. A base portion is generally cylindrical and extends radially outwardly from an opposite end of the stem portion at a location that is spaced from the top surface of the processing chamber. A substrate-facing surface or faceplate of the base portion of the showerhead includes a plurality of holes through which process gas or purge gas flows. Alternately, the upper electrode 504 may include a conducting plate and the process gases may be introduced in another manner. The lower electrode 507 may be arranged in a non-conductive pedestal. Alternately, the pedestal 506 may include an electrostatic chuck that includes a conductive plate that acts as the lower electrode 507.
An RF generating system 510 generates and outputs an RF voltage to one of the upper electrode 504 and the lower electrode 507. The other one of the upper electrode 504 and the lower electrode 507 may be DC grounded, AC grounded or floating. For example only, the RF generating system 510 may include an RF voltage generator 511 that generates the RF voltage that is fed by a matching and distribution network 512 to the upper electrode 504 or the lower electrode 507. In other examples, the plasma may be generated inductively or remotely.
A gas delivery system 530 includes one or more gas sources 532-1, 532-2, . . . , and 532-N (collectively gas sources 532), where N is an integer greater than zero. The gas sources supply one or more precursors and mixtures thereof. The gas sources may also supply purge gas. Vaporized precursor may also be used. The gas sources 532 are connected by valves 534-1, 534-2, . . . , and 534-N (collectively valves 534) and mass flow controllers 536-1, 536-2, . . . , and 536-N (collectively mass flow controllers 536) to a manifold 540. An output of the manifold 540 is fed to the processing chamber 502. For example only, the output of the manifold 540 is fed to the showerhead 509.
A heater 542 may be connected to a heater coil (not shown) arranged in the pedestal 506. The heater 542 may be used to control a temperature of the pedestal 506 and the substrate 508. A valve 550 and pump 552 may be used to evacuate reactants from the processing chamber 502. A controller 560 may be used to control components of the substrate processing chamber 500. The controller 560 may also be used to control the actuator 505 to adjust a position of one or more portions of the edge coupling ring 503.
A robot 570 and a sensor 572 may be used to measure erosion of the edge coupling ring. In some examples, the sensor 572 may include a depth gauge. The robot 570 may move the depth gauge in contact with the edge coupling ring to measure erosion. Alternately, a laser interferometer (with or without the robot 570) may be used to measure erosion without direct contact. The robot 570 may be omitted if the laser interferometer can be positioned with a direct line of sight to the edge coupling ring.
Referring now to
When the predetermined period or number of cycles are up, control determines at 624 whether a maximum predetermined etching period is up, a maximum number of etching cycles has occurred and/or a maximum # of actuator moves have occurred.
If 624 is false, control moves at least part of the edge coupling ring using the actuator. Movement of the edge coupling ring can be performed automatically, manually or a combination thereof without opening the processing chamber. If 624 is true, control sends a message or otherwise indicates that the edge coupling ring should be serviced/replaced.
Referring now to
When the predetermined amount of erosion has occurred, control determines at 724 whether a maximum amount of erosion has occurred. If 724 is false, control moves at least part of the edge coupling ring using the actuator. Movement of the edge coupling ring can be performed automatically, manually or a combination thereof without opening the processing chamber. If 724 is true, control sends a message or otherwise indicates that the edge coupling ring should be serviced/replaced.
In addition to the foregoing, a determination of whether or not the edge coupling ring needs to be moved may be based on inspection of etching patterns of the substrates after processing. The actuator may be used to adjust the edge coupling profile of the edge coupling ring without opening the chamber.
Referring now to
Referring now to
In
Referring now to
If 918 is false and the substrate needs additional treatment, the method determines whether adjustment of the edge coupling ring is required at 930. If 930 is false, the method returns to 914. If 930 is true, at least part of the edge coupling ring is moved using one or more actuators at 934 and the method returns to 914. As can be appreciated, the edge coupling ring can be adjusted between treatments of the same substrate in the same processing chamber.
Referring now to
Referring now to
A bottom edge coupling ring 1034 may be arranged below the edge coupling ring 1014 and the lifting ring 1018. The bottom edge coupling ring 1034 may be arranged adjacent to and radially outside of the ESC plates 1024, 1030 and 1032 and the O-ring 1026.
In some examples, the edge coupling ring 1014 may include one or more self-centering features 1040, 1044 and 1046. For example only, the self-centering features 1040 and 1044 may be triangular-shaped, female self-centering features, although other shapes may be used. The self-centering feature 1046 may be a sloped surface. The lifting ring 1018 may include one or more self-centering features 1048, 1050 and 1051. For example only, the self-centering features 1048 and 1050 may be triangular-shaped, male self-centering features, although other shapes may be used. The self-centering feature 1051 may be a sloped surface having a complementary shape to the self-centering feature 1046. The self-centering feature 1048 on the lifting ring 1018 may mate with the self-centering feature 1044 on the edge coupling ring 1014. The self-centering feature 1050 on the lifting ring 1018 may mate with a self-centering feature 1052 of the bottom edge coupling ring 1034.
The lifting ring 1018 further includes a projection 1054 that extends radially outwardly. A groove 1056 may be arranged on a bottom-facing surface 1057 of the projection 1054. The groove 1056 is configured to be biased by one end of a pillar 1060 that is connected to and selectively moved vertically by an actuator 1064. The actuator 1064 may be controlled by the controller. As can be appreciated, while a single groove, pillar and actuator are shown, additional grooves, pillars and actuators may be circumferentially arranged in a spaced relationship around the lifting ring 1018 to bias the lifting ring 1018 in an upward direction.
In
Alternately, instead of lifting the robot arm 1102 and holder 1104 upwardly to lift the edge coupling ring 1014 off of the lifting ring 1018, the robot arm 1102 and holder 1104 can be positioned below and in contact with the raised edge coupling ring 1014. Then, the lifting ring 1018 is lowered and the edge coupling ring 1014 remains on the robot arm 1102 and holder 1104. The robot arm 1102, the holder 1104 and the edge coupling ring 1014 can be removed from the processing chamber. The opposite operation may be used to deliver a new edge coupling ring 1014 onto the lifting ring 1018.
Referring now to
As is described in detail above, erosion of an upwardly facing surface of the movable edge coupling ring 1238 may occur during use. This, in turn, may alter the profile of the plasma. The movable edge coupling ring 1238 may be selectively moved in an upward direction using the pillars 1210 and the actuators 1214 to alter the profile of the plasma. In
In
As can be appreciated, the actuators can be arranged in the processing chamber or outside of the processing chamber. In some examples, the edge coupling rings may be supplied to the chamber via a cassette, loadlock, transfer chambers and the like. Alternatively, the edge coupling rings may be stored outside of the processing chamber but inside of the substrate processing tool.
Referring now to
In
Referring now to
Referring now to
If 1502 is true, the method determines whether a position of the movable edge coupling ring needs to be adjusted at 1506. If 1506 is true, the method adjusts a position of the movable edge coupling ring using an actuator and returns to 1506. When 1506 is false, the method runs the process at 1510. At 1512, the method determines whether the movable edge coupling ring is worn. If false, the method returns to 1510.
If 1512 is true, the method determines whether the movable edge coupling ring is in a highest (or fully adjusted) position at 1520. If 1520 is false, the method adjusts a position of the movable edge coupling ring using the actuator 1214 at 1524 and the method returns to 1510. If 1520 is true, the method replaces the movable edge coupling ring using the actuator 1064, the lifting ring 1018 and the robot arm 1102.
Referring now to
Referring now to
In
A camera 1760 is mounted on attachment mechanism 1765 to view the edge coupling ring 1740 through a side view port 1770 in chamber 1710. The attachment mechanism 1765 may be a bracket, docking mechanism, or other suitable attachment mechanism enabling suitable vertical and/or horizontal movement of the camera 1760 relative to the side view port 1770, and enable appropriate focus of the camera 1760 on the appropriate portion of edge coupling ring 1740. In one feature, side view port 1770 includes a shutter 1775 to protect the material in the port during wafer processing. In one feature, the shutter 1775 operates using a pneumatic gate valve.
In one feature, as shown, the attachment mechanism 1765 mounts the camera 1760 on chamber 1710. In another feature, the attachment mechanism 1765 mounts the camera 1760 on structure next to the chamber 1710.
In some features, the controller (shown in previous figures) controls actuation, focus, and positioning of the camera 1760. In some features, a separate controller 1800 provides one or more of actuation, focus, and positioning for the camera. In some features, the camera itself provides its own focusing mechanism, but one of the controllers described herein supplements the camera's own focusing based on separate analysis of the images provided.
In other features, the camera 1760 is installed to permit viewing through window 1715. In
The camera 1760 is of sufficient resolution (e.g. number of pixels) to produce images of a suitable size to enable determination of the condition and position of the edge coupling ring 1740, and to provide direct measurement of ring height and ring erosion. In some features, the camera operates in macro (close up) mode, using a macro lens. In other features, the lens may be an optical zoom lens that provides appropriate magnification. Any combination of pixel number and magnification (macro, optical zoom or, in some features, digital zoom) that enables production of sufficient information (e.g. an image) to determine ring condition and position will be acceptable. In some features, the camera 1760 may operate using high dynamic range (HDR) imaging in combination with macro and/or zoom photography.
In one feature, in order for there to be sufficient light in chamber 1710 to illuminate the edge coupling ring 1740, plasma light is good enough. In other features, an external lighting source, such as a light emitting diode (LED) source, is provided. In
For ease of illustrating the two side view ports 1770, 1790 separately, the chamber 1710 is depicted as being a little taller in
In operation, the focus and/or position of camera 1760 can drift. In one feature, controller 1800 monitors the focus and position of camera 1760, and makes appropriate adjustments.
In one feature, raw images such as the ones shown in
To this end, in
By looking at the reflection of the edge coupling ring instead of looking at the ring itself, the perspective problem is avoided. The height of the inside edge of the edge coupling ring can be measured directly to enable, in some instances, a clearer determination of the condition of the edge coupling ring.
There can be limits to detectability of ring erosion, even from looking at the reflection of the edge coupling ring. Because erosion occurs on the inside of the edge coupling ring, the erosion reduces the height of the inner edge of the ring relative to the outer edge. The greater the reduction, the greater the extent to which the upper surface of the ring is effectively tilted. At some point, the degree of “tilt” can be so great as to make it difficult to distinguish the inner edge of the ring in reflection, thereby making it difficult to measure the height of that inner edge, and hence to measure the extent of erosion. Inability to determine the extent of erosion can trigger either too rapid or too slow an adjustment of the ring height with the actuators, or even ring replacement. As a result, either the edge coupling ring will be replaced too soon, thereby wasting useful life of the ring, or the ring will be raised or replaced too late, leading to variability in etch profile near a radially outer edge of the wafer. In one feature, increasing the angle at which the camera 1760 views the reflected image, as erosion progresses, can compensate.
At 1940, the camera takes images of the edge coupling ring relative to a fixed reference, such as the lifting ring of
If the edge coupling ring is not tilted, then at 1960 it is determined whether the edge coupling ring is at the correct height, again using the images that were obtained. If there is ring is not at the correct height, then at 1965 the controller 560 controls one or more of the vertical actuators to correct the height, and the method returns to 1940 to obtain more images and check again (at 1960) whether the edge coupling ring is at the correct height. In one feature, if tilt has already been adjusted, 1950 can be skipped, and the method can proceed directly from 1940 to 1960. In another feature, tilt and height can be measured and adjusted in a single step, by combining 1950 and 1960 into a single analysis, combining 1955 and 1965 into a single process, with the controller 560 controlling the vertical actuators in a single action.
Once the edge coupling is at the proper height and vertical alignment, then at 1970 it is determined whether the edge coupling ring is aligned horizontally on the ESC. If it is not aligned horizontally, then at 1975 the controller 560 causes one or more of the horizontal actuators to move the edge coupling ring, whereupon the method returns to 1940 to obtain more images and check again (at 1970) whether the edge coupling ring is aligned horizontally. In one feature, if vertical alignment has already been adjusted, then 1950 and 1960 can be skipped, and the method can proceed directly from 1940 to 1970.
In the method depicted in
In one feature, instead of waiting a predetermined period, at 2020 it is determined whether a predetermined number of processing cycles has occurred. If not, the method returns to 2020 to check the number of cycles again.
If either a predetermined period has passed or a predetermined number of processing cycles has occurred, at 2030 the camera is focused to identify the inner edge of the ring. As discussed earlier, the camera can be focused either on the inner edge of the edge coupling ring, or on a reflection of the ring on either the ESC or the wafer. At 2040, after focusing images are taken of the edge coupling ring relative to a fixed reference, and the height of the inner edge of the ring is measured. At 2050, if that inner edge is determined to be at least a predetermined height above the surface of the wafer, then at 2055 it is determined to wait a predetermined period. In one feature, instead of waiting a predetermined period, it is determined to wait for a predetermined number of wafer processing cycles. After either the predetermined period has passed or the predetermined number of cycles has occurred, the method returns to 2030, where the camera is refocused, and then to 2040, where more images are taken, and the determination at 2050 is repeated.
If the inner edge of the edge coupling ring is determined not to be at least a predetermined height above the surface of the wafer, at 2060 the controller 560 controls the vertical actuators to raise the edge coupling ring. At 2070, it is determined whether there has been a predetermined number of cycles since installation of the edge coupling ring. If not, the method returns to 2055 and waits a predetermined period. In one feature, at 2055 the method could wait a predetermined number of cycles.
If at 2070 it is determined that a predetermined number of cycles has passed, then at 2080 the edge coupling ring is replaced. In one feature, instead of seeing whether a predetermined number of cycles has passed, the amount of extension of the actuator could be measured. If the extension of the actuator exceeds a predetermined amount, then it could be determined that the edge coupling ring should be replaced. In another feature, instead of either of the immediately preceding alternatives, it could be determined whether a predetermined period of time has passed since installation of the edge coupling ring. If such a time period has passed, it could be determined that the edge coupling ring should be replaced.
After the edge coupling ring has been replaced, the method can end at 2090, or can return to start.
The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.” It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure.
In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and/or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.
Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.
As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.
The present application is a continuation-in-part of U.S. application Ser. No. 14/705,430, filed May 6, 2015. That application in turn is a continuation-in-part of U.S. application Ser. No. 14/598,943, filed Jan. 16, 2015. The present application incorporates both of these prior applications by reference in their entirety.
Number | Date | Country | |
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Parent | 14705430 | May 2015 | US |
Child | 15609570 | US | |
Parent | 14598943 | Jan 2015 | US |
Child | 14705430 | US |