Claims
- 1. A method of manufacturing a multilayer circuit board;
(a) applying a first continuous homogenous metal layer on a first dielectric layer, (b) applying a first photoresist on said first metal layer; (c) exposing and developing said first photoresist to define a conductive bump; (d) etching the metal layer not covered by said first photoresist to reduce the height of said exposed metal layer and to provide said conductive bump; (e) removing said first photoresist; (f) applying a second photoresist onto said metal layer; (g) exposing and developing said second photoresist to define a pattern comprising a conductive bump and a plurality of circuit lines; (h) etching the metal layer exposed by the development of said second photoresist to form a conductive bump having an upper surface and a plurality of circuit lines in said metal layer; (i) removing said second photoresist; (j) forming an organic dielectric layer on the plurality of circuit lines and the substrate exposed by etching, said dielectric layer defining a hole which exposes the top surface of the conductive bump; (k) applying a second metal layer onto said second dielectric layer and onto the exposed upper surface of said conductive bump to provide a multilayer substrate comprising a first metal layer and a second metal layer on opposing surfaces of said second dielectric layer, wherein said first metal layer and said second metal layer are interconnected by a solid conductive bump.
- 2. The method of claim 1 wherein said first metal layer comprises a plurality of conductive bumps, and said second metal layer has a substantially planar face, and further comprising the steps of:
(a) applying a third photoresist on said planar face; (b) exposing and developing said third photoresist to define a plurality of conductive bumps; (c) etching the metal layer exposed by development of said third photoresist to said exposed second metal layer to a second desired height; (d) removing said third photoresist; (e) applying a fourth photoresist onto said face of said second metal layer; (f) exposing and developing said fourth photoresist to define a pattern (g) etching the metal layer exposed by the development of said fourth photoresist to form a plurality of circuit lines in said metal layer; and (h) removing said fourth photoresist to provide a printed circuit board comprising two conductive layers, each of said conductive layers comprising a plurality of conductive bumps and a plurality of circuit lines.
- 3. The method of claim 1 wherein the metal layer comprises copper.
- 4. The method of claim 1 wherein the etching step (d) comprises treating the exposed surface of the metal layer with an etching agent at less than 110° F. for a time sufficient to reduce exposed portions of the metal layer to a desired second height and to produce said conductive bump.
- 5 The method of claim 4 wherein the etching agent is selected from the group consisting of cupric chloride, ferric chloride or sodium persulphate.
- 6. The method of claim 5 wherein the etching agent comprises cupric ions at a concentration of from about 125 to 225 gm/liter of etching agent.
- 7. The method of claim 1 wherein etching step (d) comprises forming said conductive bumps with a minimal undercut.
- 8. A method of forming a plurality of solid conductive bumps for interconnecting two conductive layers of a circuit board, said conductive bumps having upper surfaces, said method comprising the steps of
(a) obtaining a first continuous homogenous metal layer disposed on a second metal layer, said first metal layer having a substantially planar exposed face and said second metal layer having an exposed face; (b) applying a first photoresist onto the exposed face of said first metal layer and a second photoresist onto the exposed face of said second metal layer; (c) imaging said first photoresist to define a pattern of remaining photoresist sections; (d) forming a plurality of conductive bumps by etching regions of the first metal layer not covered by said remaining first photoresist sections to a second desired height; (e) removing said first photoresist and said second photoresist; (f) applying a third photoresist onto the first metal layer and the second metal layer; (g) exposing and developing said third photoresist on said first metal layer to define a pattern of conductive bumps and circuit lines; (h) etching the first metal layer sections exposed by the development of said third photoresist to form a plurality of circuit lines in said first metal layer; (i) removing said third photoresist; (j) applying a dielectric layer onto said circuit lines, said dielectric layer defining a plurality of holes which expose the upper surfaces of said plurality of conductive bumps; and (k) removing said second metal layer.
- 9. The method of claim 8 further comprising the step of applying a third conductive layer onto the dielectric layer to provide a structure comprising two metal layers disposed on opposing surfaces of the dielectric, wherein said metal layers are interconnected by a plurality of solid conductive bumps.
- 10. The method of claim 9 wherein said first and said third metal layers comprise copper and said second metal layer comprises aluminum.
- 11. The method of claim 8 wherein the metal layer comprises copper.
- 12. The method of claim 8 wherein the etching step (d) comprises treating the exposed surface of the metal layer with an etching agent at less than 110° F. for a time sufficient to reduce exposed portions of the metal layer to a desired second height and to produce said conductive bump.
- 13 The method of claim 12 wherein the etching agent is selected from the group consisting of cupric chloride, ferric chloride or sodium persulphate.
- 14. The method of claim 13 wherein the etching agent comprises cupric ions at a concentration of from about 125 to 225 gm/liter of etching agent.
- 15. The method of claim 8 wherein etching step (d) comprises forming said conductive bumps with a minimal undercut.
- 16. A method for fabricating a metallic border for providing rigidity to a panel, comprising:
(a) providing a continuous homogenous metal layer having a first height; (b) applying a first photoresist to a face of said metal layer; (c) exposing and developing said photoresist to provide at least one remaining photoresist section which defines an opening; (d) etching the metal layer not covered by said remaining photoresist section to provide a region of metal having a second height; (e) removing said remaining photoresist section to provide a metal border, said metal border having a first height and surrounding said region of metal having a second height.
- 17. The method of claim 16 further comprising the step of applying the metal layer to a dielectric substrate before step (b).
- 18. The method of claim 16 further comprising the step of applying the metal layer to a dielectric substrate after step (e).
- 19. The method of claim 16 wherein said photoresist is exposed and developed to provide first remaining photoresist section defining a hole and a second remaining photoresist section disposed within said hole; and wherein said etching further provides a conductive bump having a first height, said conductive bump being disposed on and continuous with said region of metal having a second height.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a division of application Ser. No. 09/789,156, filed Feb. 20, 2001, now U.S. Pat. No. ______, which in turn is a division of U.S. Pat. No. 6,222,136 B1.
Divisions (2)
|
Number |
Date |
Country |
Parent |
09789156 |
Feb 2001 |
US |
Child |
10664996 |
Sep 2003 |
US |
Parent |
08968988 |
Nov 1997 |
US |
Child |
09789156 |
Feb 2001 |
US |