Claims
- 1. A method of material deposition comprising:
depositing said material on at least one substrate by atomic layer processing including injecting a series of gases sequentially into a reactant chamber without purging one gas from said chamber prior to injection of another gas.
- 2. A method as recited in claim 1 wherein each said gas includes a mixture of a reactant gas and an inert carrier gas.
- 3. A method as recited in claim 1 wherein a second injected said gas includes a reduced flow of a prior injected first gas.
- 4. A method as recited in claim 1 wherein said gases include a first activating gas that activates surface sites on said substrate prior to injection of a gas including a reactant gas.
- 5. A method as recited in claim 4 wherein a quantity of said series of gases is sufficient to deposit a desired thickness of said material.
- 6. A method as recited in claim 4 wherein said first activating gas is for increasing an adsorption and chemisorption rate of a reactant on a said substrate.
- 7. A method as recited in claim 2 wherein at least one gas in each of said groups of injections include a ligand for enhancing a reactant adsorption and chemisorption rate of a reactant on a said substrate.
- 8. A method as recited in claim 4 further comprising subjecting said at least one substrate to a rapid thermal anneal after each of a predetermined number of said gases injected.
- 9. A method as recited in claim 1 wherein said reactor includes
a) a boat for holding a plurality of said substrates; b) a first plurality of heater sections spaced around said boat; and c) a second plurality of temperature controlled zones, wherein each zone is positioned between two heater sections.
- 10. A method as recited in claim 9 wherein said zones include a temperature controlled gas injector configured with an injector plate for providing a concentrated flow of gas across each said substrate.
- 11. A method as recited in claim 9 wherein said zones include a temperature controlled gas exhaust positioned opposite said boat from said injector for drawing said gas across each said substrate.
- 12. A method of material deposition comprising:
depositing said material on at least one substrate by atomic layer processing including injecting a plurality of reactant gases into a deposition chamber wherein during a transition from injecting one of said reactant gases to another one of said reactant gases, a gas flows continuously including at least one of said reactant gases.
- 13. A method as recited in claim 12 wherein said chamber is a single wafer chamber.
- 14. A method as recited in claim 12 wherein said chamber is a multiwafer chamber.
- 15. A method of atomic layer deposition in a reactor chamber wherein said chamber is a multiwafer chamber.
- 16. A method of atomic layer deposition in a reactor chamber wherein a plurality of reactant gases are injected into said chamber, and wherein each said reactant gas is injected from a dedicated reactant reservoir, whereby said reactants are not mixed in a foreline of a pump and cycling of a precursor delivery system is minimized.
- 17. A method as recited in claim 12 further comprising subjecting said substrates to a rapid thermal anneal after each of a predetermined number of said groups of injections.
- 18. A method as recited in claim 15 further comprising subjecting said substrates to a rapid thermal anneal after each of a predetermined number of said groups of injections.
- 19. A method as recited in claim 16 further comprising subjecting said substrates to a rapid thermal anneal after each of a predetermined number of said groups of injections.
- 20. A method as recited in claim 1 wherein said injected gas includes at least one reactant gas, and a reagent for reacting with a surface of said substrate for increasing a chemisorption rate.
- 21. A method as recited in claim 12 wherein said gases include at least one reactant, and reagent for reacting with a surface of said substrate for increasing a chemisorption rate.
Parent Case Info
[0001] This application is a continuation in part of (a) U.S. patent application Ser. No. 10/216,079 filed Aug. 9, 2002 which is a continuation in part of U.S. application Ser. No. 09/954,705 filed Sep. 10, 2001 which is a continuation in part of U.S. application Ser. No. 09/396,588 filed Sep. 15, 1999 (which claims the benefit of U.S. Provisional Application Serial No. 60/100,594 filed Sep. 16, 1998), which is a continuation in part of (i) U.S. application Ser. No. 08/909,461 filed Aug. 11, 1997, (ii) U.S. application Ser. No. 09/228,835 filed Jan. 12, 1999 (which claims the benefit of U.S. application Ser. No. 60/071,572 filed Jan. 15, 1998), and (iii) U.S. application Ser. No. 228,840 filed Jan. 12, 1999 (which claims the benefit of U.S. Provisional Application Serial No. 60/071,571 filed Jan. 15, 1998); and (b) U.S. application Ser. No. 09/396,590 filed Sep. 15, 1999 (which claims priority from U.S. application Ser. No. 60/100,596 filed Sep. 16, 1998). The disclosures of each of the foregoing applications is hereby incorporated by reference.
Provisional Applications (4)
|
Number |
Date |
Country |
|
60100594 |
Sep 1998 |
US |
|
60071572 |
Jan 1998 |
US |
|
60071571 |
Jan 1998 |
US |
|
60100596 |
Sep 1998 |
US |
Continuation in Parts (6)
|
Number |
Date |
Country |
Parent |
10216079 |
Aug 2002 |
US |
Child |
10342151 |
Jan 2003 |
US |
Parent |
09954705 |
Sep 2001 |
US |
Child |
10216079 |
Aug 2002 |
US |
Parent |
09396588 |
Sep 1999 |
US |
Child |
09954705 |
Sep 2001 |
US |
Parent |
08909461 |
Aug 1997 |
US |
Child |
09954705 |
Sep 2001 |
US |
Parent |
09228835 |
Jan 1999 |
US |
Child |
09954705 |
Sep 2001 |
US |
Parent |
09396590 |
Sep 1999 |
US |
Child |
10342151 |
Jan 2003 |
US |