Claims
- 1. A method for depositing a TiN-series thin film, said method comprising the steps of:
arranging a substrate in a process vessel; evacuating said process vessel, while heating said substrate; pre-heating said substrate while introducing a N2 gas and a NH3 gas into said process vessel; pre-flowing a TiCl4 gas and an O-containing gas, without introducing same into said process vessel; and introducing said TiCl4 gas, said N2 gas, said NH3 gas and said O-containing gas into said process vessel to form a thin film containing Ti, O and N on said substrate by a CVD, wherein flow rates of said gases in said pre-flowing step are equal to those in said introducing step.
- 2. The method for depositing a TiN-series thin film as set forth in claim 1, which further comprises a step of introducing an O-containing gas into said process vessel before and/or after said step of forming the thin film containing Ti, O and N.
- 3. The method for depositing a TiN-series thin film as set forth in claim 1, wherein flow ratio of O2 to said NH3 is in the range of from 0.0001 to 0.001, providing that a flow rate of said O-containing gas is converted into that of said O2.
- 4. A method for depositing a TiN-series thin film, said method comprising the steps of:
arranging a substrate in a process vessel; evacuating said process vessel, while heating said substrate; pre-heating said substrate while introducing a N2 gas and a NH3 gas into said process vessel; pre-flowing a TiCl4 gas, an O-containing gas and a PH3 gas, without introducing same into said process vessel; and introducing said TiCl4 gas, said N2 gas, said NH3 gas, said O-containing gas and said PH3 gas into said process vessel to form a thin film containing Ti, O, N and P on said substrate by a CVD.
- 5. The method for depositing a TiN-series thin film as set forth in claim 4, which further comprises a step of introducing an O-containing gas into said process vessel before and/or after said step of forming the thin film containing Ti, O, N and P.
- 6. The method for depositing a TiN-series thin film as set forth in claim 4, wherein flow ratio of O2 to said NH3 is in the range of from 0.0001 to 0.001, providing that a flow rate of said O-containing gas is converted into that of said O2.
- 7. The method for depositing a TiN-series thin film as set forth in claim 4, wherein flow rate of said PH3 is in the range of from 0.04 to 0.5 L/min.
- 8. A method for depositing a TiN-series thin film, said method comprising the steps of:
arranging a substrate in a process vessel; evacuating said process vessel, while heating said substrate; pre-heating said substrate while introducing a N2 gas and a NH3 gas into said process vessel; pre-flowing a TiCl4 gas and an O-containing gas, without introducing same into said process vessel; introducing said TiCl4 gas, said N2 gas, said NH3 gas and said O-containing gas into a process vessel to form a first thin film containing Ti, O and N by a CVD; pre-flowing TiCl4 gas and PH3 gas, without introducing same into said process vessel; and introducing said TiCl4 gas, said N2 gas, said NH3 gas and said PH3 gas into said process vessel to form a second thin film containing Ti, N and P on said first thin film by a CVD.
- 9. The method for depositing a TiN-series thin film as set forth in claim 8, wherein flow ratio of O2 to said NH3 is in the range of from 0.0001 to 0.001, providing that a flow rate of said O-containing gas is converted into that of said O2.
- 10. The method for depositing a TiN-series thin film as set forth in claim 8, wherein flow rate of said PH3 is in the range of from 0.04 to 0.5 L/min.
- 11. A method for depositing a TiN-series thin film, said method comprising the steps of:
arranging a substrate in a process vessel; evacuating said process vessel, while heating said substrate; pre-heating said substrate while introducing a N2 gas and a NH3 gas into said process vessel; pre-flowing a TiCl4 gas and a first O-containing gas, without introducing same into said process vessel; introducing said TiCl4 gas, said N2 gas, said NH3 gas and said first O-containing gas into a process vessel to form a first thin film containing Ti, O and N by a CVD; pre-flowing a TiCl4 gas and a PH3 gas, without introducing same into said process vessel; introducing said TiCl4 gas, said N2 gas, said NH3 gas and said PH3 gas into said process vessel to form a second thin film containing Ti, N and P on said first thin film by a CVD; pre-flowing a TiCl4 gas and a second O-containing gas, without introducing same into said process vessel; and introducing said TiCl4 gas, said N2 gas, said NH3 gas and said second O-containing gas into said process vessel to form a third thin film containing Ti, O and N on said second thin film by a CVD.
- 12. The method for depositing a TiN-series thin film as set forth in claim 11, wherein flow ratio of O2 to said NH3 is in the range of from 0.0001 to 0.001, providing that a flow rate of said O-containing gas is converted into that of said O2.
- 13. The method for depositing a TiN-series thin film as set forth in claim 11, wherein flow rate of said PH3 is in the range of from 0.04 to 0.5 L/min.
- 14. A method for depositing a TiN-series thin film, said method comprising the steps of:
arranging a substrate in a process vessel; evacuating said process vessel, while heating said substrate; pre-heating said substrate while introducing a N2 gas and a NH3 gas into said process vessel; pre-flowing a TiCl4 gas and a PH3 gas, without introducing same into said process vessel; and introducing said TiCl4 gas, said N2 gas, said NH3 gas and said PH3 gas into said process vessel to form a thin film containing Ti, N and P on said substrate by a CVD.
- 15. The method for depositing a TiN-series thin film as set forth in claim 23, which further comprises a step of introducing an O-containing gas into said process vessel before and/or after said step of forming the thin film containing Ti, N and P.
- 16. The method for depositing a TiN-series thin film as set forth in claim 14, wherein flow rate of said PH3 is in the range of from 0.04 to 0.5 L/min.
- 17. A method for producing a film structure, said method comprising the steps of:
forming a first conductive layer on a substrate; forming a TiN-series thin film on said first conductive layer; and forming a second conductive layer on said TiN-series thin film, wherein said step of forming a TiN-series thin film includes the sub-steps of:
arranging said substrate in a process vessel; evacuating said process vessel, while heating said substrate; pre-heating said substrate while introducing a N2 gas and a NH3 gas into said process vessel; pre-flowing a TiCl4 gas and at least one of an O-containing gas and a PH3 gas, without introducing same into said process vessel; and introducing said TiCl4 gas, said N2 gas, said NH3 gas, and said at least one of said O-containing gas and said PH3 gas into said process vessel to form a thin film containing Ti, N and at least one of 0 and P on said first conductive layer by a CVD, wherein flow rates of said gases in said pre-flowing step are equal to those in said introducing step.
- 18. The method for producing a film structure as set forth in claim 17, wherein said first conductive layer is one of a TiSi layer, a CoSi layer and a Si layer, and said second conductive layer is one of an Al layer, a W layer and a Cu layer.
- 19. The method for producing a film structure as set forth in claim 17, wherein said first conductive layer is a polysilicon layer, and said second conductive layer is one of an Al layer, a W layer and a Cu layer.
- 20. The method for producing a film structure as set forth in claim 19, wherein said film structure is constructed as a contact structure of a semiconductor device.
- 21. A method for depositing a metallic nitride series thin film, said method comprising the steps of:
arranging a substrate in a process vessel; evacuating said process vessel, while heating said substrate; pre-heating said substrate while introducing an inert gas and a reducing gas into said process vessel; pre-flowing a metallic-element containing gas and at least one of an O-containing gas, a PH3 gas and a B2H6 gas, without introducing same into said process vessel; and introducing said metallic-element containing gas, said inert gas, said reducing gas, and at least one of said O-containing gas, a PH3 gas and a B2H6 gas into said process vessel to form a metallic nitride thin film containing at least one of O, P and B on said substrate by a CVD, wherein flow rates of said gases in said pre-flowing step are equal to those in said introducing step.
- 22. The method for depositing a metallic nitride series thin film as set forth in claim 21, wherein said metallic element is one of Ti, Al, W, Zr, Hf, Ru, Ta, and La.
- 23. The method for depositing a metallic nitride series thin film as set forth in claim 21, further comprising the steps of introducing an O-containing gas into said process vessel before and after said step of forming a metallic nitride series thin film.
- 24. The method for depositing a metallic nitride series thin film as set forth in claim 23, said O-containing gas is one of O2, NO and N2O gases.
- 25. A method for producing a film structure, said method comprising the steps of:
forming a dielectric layer on a first conductive layer; forming a metallic nitride series thin film on said dielectric layer; and forming a second conductive layer on said metallic nitride series thin film, wherein said step of forming a metallic nitride series thin film includes the sub-steps of:
pre-flowing a metallic-element containing gas without introducing same into a process vessel; and introducing said metallic-element containing gas, a N2 gas, a NH3 gas, and at least one of an O-containing gas, a PH3 gas and a B2H6 gas into a process vessel to form said metallic nitride series thin film comprising at least one of a thin film containing said metallic-element, O and N, a thin film containing said metallic-element, N and P, a thin film containing said metallic-element, N and B, a thin film containing said metallic-element, O, N and P and a thin film containing said metallic-element, O, N and B, by a CVD.
- 26. The method for depositing a metallic nitride series thin film as set forth in claim 25, wherein said metallic element is one of Ti, Al, W, Zr, Hf, Ru, Ta, and La.
- 27. The method for depositing a metallic nitride series thin film as set forth in claim 25, further comprising the-steps of introducing an O-containing gas into said process vessel before and after said step of forming a metallic nitride series thin film.
- 28. The method for depositing a metallic nitride series thin film as set forth in claim 27, said O-containing gas is one of O2, NO and N2O gases.
- 29. The method for producing a film structure as set forth in claim 25, wherein said first conductive layer is a Si layer, and said dielectric layer comprises at least one of SiO2, SiON, HfO2, ZrO, Ta2O5, RuO, PZT and BST, and said second conductive layer is one of an Al layer, a W layer and a Cu layer.
- 30. The method for producing a film structure as set forth in claim 29, wherein said film structure is constructed as a metal gate electrode structure of a semiconductor device.
- 31. The method for producing a film structure as set forth in claim 25, wherein said first conductive layer is a Si layer, said dielectric layer comprises at least one of SiO2, SiON, HfO2, ZrO, Ta2O5, RuO, PZT and BST, and said second conductive layer is a polysilicon layer, said method further comprising the steps of:
forming a metallic nitride series thin film on said polysilicon layer; and forming one of an Al layer, a W layer and a Cu layer on said metallic nitride series thin film.
- 32. The method for producing a film structure as set forth in claim 31, wherein said film structure is constructed as a poly metal gate electrode structure of a semiconductor device.
- 33. The method for producing a film structure as set forth in claim 25, wherein said first conductive layer is one of a polysilicon layer, a metal layer and a metallic nitride layer, said dielectric layer comprises at least one of SiO2, SiON, HfO2, ZrO, Ta2O5, RuO, PZT and BST, and said second conductive layer is one of a metal layer and a metallic nitride layer.
- 34. The method for producing a film structure as set forth in claim 33, wherein said film structure is constructed as a capacitor electrode structure of a semiconductor device.
- 35. A method for depositing a metallic nitride series thin film, said method comprising the steps of:
arranging a substrate in a process vessel; evacuating said process vessel, while heating said substrate; pre-heating said substrate while introducing a N-containing gas into said process vessel; pre-flowing a metallic-element containing gas without introducing said metallic-element containing gas into said process vessel; and introducing said metallic-element containing gas, an inert gas and a reducing gas into said process vessel to form a metallic nitride series thin film on said substrate by a CVD, wherein flow rate of said metallic-element containing gas in said pre-flowing step is equal to that in said introducing step.
- 36. The method for depositing a metallic nitride series thin film as set forth in claim 35, wherein said metallic element is one of Ti, Al, W, Zr, Hf, Ru, Ta, and La.
- 37. The method for depositing a metallic nitride series thin film as set forth in claim 35, further comprising the steps of introducing an O-containing gas into said process vessel before and after said step of forming a metallic nitride series thin film.
- 38. The method for depositing a metallic nitride series thin film as set forth in claim 37, said O-containing gas is one of O2, NO and N2O gases.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This is a continuation-in-part application of patent application Ser. No. 09/660,546 filed on Sep. 12, 2000, now abandoned.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09660546 |
Sep 2000 |
US |
Child |
10307487 |
Dec 2002 |
US |