Claims
- 1. A method of forming a complex film over a substrate comprising the steps of:
- forming a plurality of completely isolated island-like regions spaced from one another by gaps over the substrate while controlling a covering area of said island-like regions per unit area over said substrate and including the steps of forming a plurality of growth nuclei of a first conductive material and thereafter forming a first thin film of a second conductive material over all of the growth nuclei to form said island-like regions;
- covering over said substrate and said island-like regions and filling in said gaps with a second thin film made of a third conductive material different from the first and second conductive materials of said island-like regions; and
- obtaining a specific desired work function at an interface between said substrate and said complex film formed of said island-like regions and said second thin film by adjusting a magnitude of said cowering area of said island-like regions per unit area over said substrate over which said island-like regions and said second thin film overlie.
- 2. A method according to claim 1, wherein said island-like regions are formed of a semiconductor material by CVD.
- 3. A method according to claim 1, wherein said second thin film is formed of a silicide.
- 4. A method according to claim 2, wherein said semiconductor material comprises silicon.
- 5. A method according to claim 1, wherein said island-like regions comprise a silicon doped with an impurity.
- 6. A method according to claim 1, wherein said island-like regions comprise a doped silicon and said second thin film comprises a silicide.
- 7. A method according to claim 1, wherein said island-like regions are formed of a silicide by CVD.
- 8. A method according to claim 1, wherein said second thin film is formed of a metal by CVD.
- 9. A method according to claim 7, wherein said silicide is tungsten silicide formed by CVD.
- 10. A method according to claim 1, wherein said second thin film is formed by sputtering.
- 11. A method according to claim 10, wherein said second thin film is formed of titanium by sputtering.
- 12. A method according to claim 1 including the step of forming a gate electrode by said complex film.
- 13. A method according to claim 1 including the step of forming said complex film on a bottom portion of a contact-hole.
- 14. A method according to claim 1 including the step of providing a density of said growth nuclei of at least 40 pieces per unit area 1 .mu.m.sup.2 of the substrate.
Priority Claims (2)
Number |
Date |
Country |
Kind |
6-018990 |
Jan 1994 |
JPX |
|
6-184087 |
Jul 1994 |
JPX |
|
Parent Case Info
This is a division of application Ser. No. 08/362,918, filed Dec. 23, 1994, now abandoned.
US Referenced Citations (10)
Foreign Referenced Citations (2)
Number |
Date |
Country |
4364073 |
Dec 1992 |
JPX |
5-129630 |
May 1993 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
362918 |
Dec 1994 |
|