Claims
- 1. A method of producing a semiconductor integrated circuit device, comprising the steps of:
- (a) preparing a semiconductor substrate having first and second portions in a main surface of said semiconductor substrate, wherein a first metal layer is at least partially formed in said first portion and an insulating film is formed in said second portion;
- (b) forming a first photoresist film over said second portion;
- (c) forming a second photoresist film over said first and second portions, said second photoresist film having first and second openings over said main surface of said semiconductor substrate, wherein said first metal layer is exposed in said first openings and said first photoresist film is exposed in said second openings;
- (d) forming a second metal layer over said second photoresist film, including forming said second metal layer in said first and second openings; and
- (e) removing said first and second photoresist films and said second metal layer, except for portions of said second metal layer formed in said first openings.
- 2. A method of producing a semiconductor integrated circuit device according to claim 1, wherein said second photoresist film comprises third and fourth photoresist films, and wherein said fourth photoresist film is over said third photoresist film.
- 3. A method of producing a semiconductor integrated circuit device according to claim 2, wherein said fourth photoresist film is thicker than said third photoresist film.
- 4. A method of producing a semiconductor integrated circuit device according to claim 3, wherein said fourth photoresist film is a film-resist film.
- 5. A method of producing a semiconductor integrated circuit device according to claim 1, wherein, in step (e), said first and second photoresist films are removed together by a single removing process.
- 6. A method of producing a semiconductor integrated circuit device according to claim 5, wherein said first and second photoresist films are comprised of the same material.
- 7. A method of producing a semiconductor integrated circuit device according to claim 2, wherein, in step (e), said first, third and fourth photoresist films are removed together by a single removing process.
- 8. A method of producing a semiconductor integrated circuit device according to claim 7, wherein said first, third and fourth photoresist films are comprised of the same material.
- 9. A method of producing a semiconductor integrated circuit device according to claim 1, wherein said second wiring comprises Pb and Sn.
- 10. A method of producing a semiconductor integrated circuit device according to claim 9, wherein, after step (e), a step of reflowing said second metal layer is performed.
- 11. A method of producing a semiconductor integrated circuit device according to claim 10, wherein said first metal layer comprises stacked layers of Cr, Cu and Au.
Priority Claims (4)
Number |
Date |
Country |
Kind |
63-19804 |
Jan 1988 |
JPX |
|
63-19805 |
Jan 1988 |
JPX |
|
63-19806 |
Jan 1988 |
JPX |
|
63-19807 |
Jan 1988 |
JPX |
|
Parent Case Info
This is a divisional of application Ser. No. 544,064 filed Jun. 26, 1990, now U.S. Pat. No. 5,049,972 which is a continuation of application Ser. No. 299,540 filed Jan. 18, 1989, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0027391 |
Mar 1977 |
JPX |
0035475 |
Apr 1978 |
JPX |
0181143 |
Nov 1982 |
JPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
544064 |
Jun 1990 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
299540 |
Jan 1989 |
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