Claims
- 1. A method for depositing metal on a substrate in a deposition chamber, comprising the steps of:(a) depositing a layer of metal by flowing a precursor bearing the metal over a surface of the substrate prepared for chemical reactivity with the precursor; (b) flowing one or more radicalized species, conditioning the layer deposited in step (a) for chemical reactivity with the precursor; and (c) alternatively flowing the precursor bearing the metal and the radicalized species to build a metal film.
- 2. The method of claim 1, wherein the substrate is prepared for chemical reactivity by flowing one or more radicalized species over the surface of the substrate.
- 3. The method of claim 2 wherein one or more by-products are formed in the chemical reaction between the precursor and the prepared surface of the substrate.
CROSS-REFERENCE TO RELATED DOCUMENTS
The present application is a divisional application of prior patent application Ser. No. 09/747,649, filed on Dec. 22, 2000 now U.S. Pat. No. 6,451,695, which is a divisional application from prior application Ser. No. 09/267,953, filed on Mar. 11, 1999, now issued as U.S. Pat. No. 6,200,893. Priority is claimed to both cases and they are both incorporated herein in their entirety by reference.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5916365 |
Sherman |
Jun 1999 |
A |
Non-Patent Literature Citations (1)
Entry |
U.S. patent application Ser. No. 09/267,953, Ofer Sneh. |