SEMICONDUCTOR MEMORY DEVICE

Abstract

A semiconductor memory device of an embodiment includes: a first wiring disposed at a first level and extending in a first direction; a second and third wirings disposed at a second level and extending in the first direction; a plurality of fourth wirings disposed at a third level and extending in a third direction; a plurality of first resistive change elements disposed in intersection regions of the first and fourth wirings; a plurality of second resistive change elements disposed in intersection regions between the second wiring and the third wiring and the fourth wirings; a first driving circuit electrically connected to the first wiring, a second driving circuit electrically connected to the second wiring, and a third driving circuit electrically connected to the third wiring; and a control circuit that controls the first driving circuit, the second driving circuit, and the third driving circuit, and also the fourth wirings.

Description

CROSS REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2019-053151, filed on Mar. 20, 2019, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to semiconductor memory devices.

BACKGROUND

A semiconductor memory is known, which includes a resistive change element such as a phase-change memory element (“PCM element”) having a storage layer containing a phase-change material (“PCM”) at an intersection region of crossing wirings.

Such semiconductor memories may be stacked and integrated to enable access to plural bits.

When plural bits are accessed, a large voltage drop may occur, which may lead to a decrease in operation margin.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a semiconductor memory device according to a first embodiment.

FIG. 2 is a schematic diagram for explaining an operation of the semiconductor memory device according to the first embodiment.

FIG. 3 is a schematic diagram for explaining a problem of a semiconductor memory device according to a comparative example.

FIG. 4 is a schematic diagram for explaining a problem of a semiconductor memory device according to another comparative example.

FIG. 5 is a schematic diagram of a semiconductor memory device according to a second embodiment.

FIG. 6 is a schematic diagram of the semiconductor memory device according to the second embodiment.

FIG. 7 is a schematic diagram of the semiconductor memory device according to a third embodiment.

DETAILED DESCRIPTION

A semiconductor memory device according to an embodiment includes: a first wiring disposed at a first level and extending in a first direction; a second wiring and a third wiring disposed at a second level and extending in the first direction to be separate from each other, a position of the second level in a second direction that is perpendicular to the first direction being different from a position of the first level in the second direction; a plurality of fourth wirings disposed at a third level between the first level and the second level, the fourth wirings extending in a third direction crossing the first direction and the second direction; a plurality of first resistive change elements disposed in intersection regions of the first wiring and the fourth wirings, each of the first resistive change elements including a first terminal and a second terminal, the first terminal being electrically connected to the first wiring, and the second terminal being electrically connected to corresponding one of the fourth wirings; a plurality of second resistive change elements disposed in intersection regions between the second wiring and the fourth wirings and between the third wiring and the fourth wirings, each of the second resistive change element including a third terminal and a fourth terminal, the third terminal being electrically connected to a corresponding wiring selected from the second wiring and the third wiring, and the fourth terminal being electrically connected to corresponding one of the fourth wirings; a first driving circuit electrically connected to the first wiring, a second driving circuit electrically connected to the second wiring, and a third driving circuit electrically connected to the third wiring; and a control circuit that controls the first driving circuit, the second driving circuit, and the third driving circuit, and also the fourth wirings, the first resistive change elements being divided into a first group located on one side and a second group located on another side relative to a portion of the first wiring, the second resistive change elements, the third terminal of each of which is electrically connected to the second wiring, being divided into a third group located on one side and a fourth group located on another side relative to a portion of the second wiring, and the second resistive change elements, the third terminal of each of which is electrically connected to the third wiring, being divided into a fifth group located on one side and a sixth group located on another side relative to a portion of the third wiring, the control circuit selecting the first driving circuit to select the first wiring connected to the first driving circuit that is selected, selecting one of the first resistive change elements in the first group, selecting one of the first resistive change elements in the second group, during an operation to access the two first resistive change elements that are selected, providing addresses to be selected simultaneously to two of the fourth wirings, to which the second terminals of the two first resistive change elements that are selected are connected, and providing addresses to be selected simultaneously to the second wiring and the third wiring, to which the third terminals of two second resistive change elements are connected, the fourth terminals of the two second resistive change elements being connected to the two of the fourth wirings.

First Embodiment

A semiconductor memory device according to a first embodiment will be described with reference to FIGS. 1 and 2. The semiconductor memory device according to the first embodiment has a structure obtained by stacking a first semiconductor memory 10₁ of a crosspoint type and a second semiconductor memory 10₂ of a crosspoint type, as shown in FIG. 1. In the following descriptions, resistive change elements are used as storage elements of memory cells. An example of the resistive change element is a PCM element as described in the following descriptions. However, the resistive change element is not limited to the PCM element.

The first semiconductor memory 10₁ includes a plurality of (two in FIG. 1) word lines WL₁₁ and WL₁₂, a plurality of (eight in FIG. 1) PCM elements 11₁₁ to 11₁₈, and a plurality of (eight in FIG. 1) bit lines BL₁₁ to BL1₁₈. The word lines WL₁₁ and WL₁₂, the PCM elements 11₁₁ to 11₁₈, and the bit lines BL₁₁ to BL1₁₈ are arranged at different levels in a z direction (vertical direction in FIG. 1). The positions of the respective levels in the z direction are different from one another.

The word line WL₁₁ and the word line WL₁₂ extend in a lateral direction to the plane of paper of FIG. 1 (y direction). The bit lines BL₁₁ to BL1₁₈ extend in a direction perpendicular to the plane of paper of FIG. 1 (x direction). One end of each of the storage elements (PCM elements) 11₁₁ to 11₁₄ is electrically connected to the word line WL₁₁, and one end of each of the storage elements (PCM elements) 11₁₅ to 11₁₈ is electrically connected to the word line WL₁₂. The other end of each PCM element 11_1i (i=1, . . . , 8) is electrically connected to the bit line BL_1i. The description “A and B are electrically connected” herein means that A and B may be directly connected or indirectly connected via a conductive member disposed between A and B.

The second semiconductor memory 10₂ includes a plurality of (three in FIG. 1) word lines WL₂₁, WL₂₂, and WL₂₃, a plurality of (eight in FIG. 1) PCM elements 11₂₁ to 11₂₈, and a plurality of (eight in FIG. 1) bit lines BL₁₁ to BL₁₈. Thus, the first semiconductor memory 10₁ and the second semiconductor memory 10₂ share the bit lines BL₁₁ to BL₁₈. The word lines WL₂₁, WL₂₂, and WL₂₃, the PCM elements 11₂₁ to 11₂₈, and the bit lines BL₁₁ to BL1₁₈ are arranged at different levels in the z direction.

The word lines WL₂₁, WL₂₂, and WL₂₃ extend in the y direction. A region between the word line WL₂₁ and the word line WL₂₂ of the second semiconductor memory 10₂ is located above a central portion of the word line WL₁₁ of the first semiconductor memory 10₁, and a region between the word line WL₂₂ and the word line WL₂₃ of the second semiconductor memory 10₂ is located above a central portion of the word line WL₁₂ of the first semiconductor memory 10₁. Thus, the positions in the y direction of the word lines WL₁₁ and WL₁₂ included in the first semiconductor memory 10₁ and the positions in the y direction of the word lines WL₂₁, WL₂₂, and WL₂₃ included in the second semiconductor memory 10₂ are not the same.

One end of each of the PCM elements 11₂₁ and 11₂₂ is electrically connected to the word line WL₂₁, and one end of each of the PCM elements 11₂₃ to 11₂₆ is electrically connected to the word line WL₂₂. One end of each of the PCM elements 11₂₇ and 11₂₈ is electrically connected to the word line WL₂₃. The other end of the PCM element 11_2i (i=1, . . . , 8) is electrically connected to the bit line BL_1i.

One ends of two PCM elements that are not shown in FIG. 1 are electrically connected to each of the word lines WL₂₁ and WL₂₃, and the other ends are electrically connected to bit lines that are not shown in FIG. 1. Thus, in the semiconductor memory device shown in FIG. 1, one ends of four PCM elements are electrically connected to each word line. The number of PCM elements electrically connected to each word line may be more than four.

The PCM element contains a phase-change material, the phase of which changes between crystal phase and amorphous phase. An example of the phase-change material is a chalcogenide alloy (for example, a GeSbTe alloy). The chalcogenide alloy contains a chalcogenide (GeSbTe). Other examples include a AsSbTe alloy, a TaSbTe alloy, a NbSbTe alloy, a VSbTe alloy, a NbSbSe alloy, a VSbSe alloy, a WSbTe alloy, a MoSbTe alloy, a CrSbTe alloy, a WSbSe alloy, a MoSbSe alloy, a CrSbSe alloy, and a SnSbTe alloy.

A phase-change material changes to the crystal phase having a low resistance value if it is heated, melted, and cooled slowly, and to the amorphous phase having a high resistance value if it is cooled rapidly. Therefore, if a PCM element is heated by applying a voltage between the corresponding word line and the corresponding bit line, and then the voltage is rapidly dropped, the phase-change material of the PCM element is cooled rapidly and changes to the amorphous phase that is in a high-resistance state. If the voltage is dropped slowly, the phase-change material of the PCM element is cooled slowly and changes to the crystal phase that is in a low-resistance state. Data (information) may be written to the PCM element in this manner. The data (information) may be read from the PCM element by applying a voltage between the corresponding word line and the corresponding bit line, and measuring a current caused to flow by the voltage application, thereby measuring the resistance of the PCM element, for example.

The semiconductor memory device shown in FIG. 1 also includes driving circuits 100₁₁, 100₁₂, and 100₂₂ that drive the respective word lines, and a control circuit 200 that controls the driving circuits. For example, the word lines WL₁₁, WL₁₂, and WL₂₂ are connected to the driving circuits 100₁₁, 100₁₂, and 100₂₂, respectively. The word lines WL₂₁ and WL₂₃ are also connected to driving circuits that are not shown in FIG. 1. The control circuit 200 also controls the corresponding bit line connected to the PCM element to be accessed.

Each driving circuit includes a p-channel transistor and an n-channel transistor connected in series. The gate of each of the series-connected p-channel transistor and n-channel transistor is connected to the control circuit 200. An intermediate node (connection node) of the series-connected transistors is electrically connected to the central portion of the corresponding word line. Each of the driving circuits supplies a write current or a read current via the corresponding word line to the PCM element to be accessed.

The PCM elements connected to each word line are divided into two groups at a portion (for example, the center) of the word line to which a corresponding driving circuit is connected. The number of PCM elements included in one of the two groups may be the same as or different from the number of PCM elements in the other. In the following descriptions, the PCM elements are divided into the two groups at the center of the word line. However, any position other than the center may be selected.

In the semiconductor memory device according to the first embodiment having the above-described structure, for example, the driving circuit 100₂₂ is selected by the control circuit 200, and the PCM element 11₂₃ disposed to one side of the word line WL₂₂ relative to the center of the word line WL₂₂ and the PCM element 11₂₅ disposed to the other side are to be accessed. The control circuit 200 then selects the bit lines BL₁₃ and BL₁₅. The driving circuit 100₂₂ supplies a current I to the PCM element 11₂₃ and the PCM element 11₂₅ via the word line WL₂₂ to perform a write operation or a read operation. In this case, the addresses to be selected at the same time are assigned to the bit line BL₁₃ and the bit line BL₁₅ electrically connected to the PCM element 11₂₃ and the PCM element 11₂₅.

After the addresses to be selected at the same time are assigned to the bit line BL₁₃ and the bit line BL₁₅, the control circuit 200 drives the word line WL₁₁ by using the driving circuit 100₁₁ and selects the bit line BL₁₃ to access the PCM element 11₁₃ electrically connected to the word line WL₁₁ and the bit line BL₁₃. At this time, the bit line BL₁₅, to which the address to be selected has been assigned at the same time as the bit line BL₁₃, is also selected. Therefore, in the first embodiment, the control circuit 200 drives the word line WL₁₂ via the driving circuit 100₁₂. As a result, the PCM element 11₁₅ connected to the bit line BL₁₅ and the word line WL₁₂ is also accessed. Thus, the PCM element 11₁₃ and the PCM element 11₁₅ corresponding to two bits may be accessed at the same time. Accordingly, as shown in FIG. 2, a current I is supplied to the PCM element 11₁₃ and the PCM element 11₁₅ via the word line WL₁₁ and the word line WL₁₂ to perform a write operation or a read operation. In this embodiment, the word lines WL₁₁, WL₁₂, WL₂₁, WL₂₂, and WL₂₃ are located on a section of the semiconductor memory device sectioned by a y-z plane. Therefore, the same physical row address may be provided to those word lines, for example.

COMPARATIVE EXAMPLE

A semiconductor memory device according to comparative examples will be described with reference to FIGS. 3 and 4. FIG. 3 shows the semiconductor memory device according to a comparative example. The semiconductor memory device according to the comparative example has the same structure as the semiconductor memory device according to the first embodiment shown in FIG. 1, but differs from the semiconductor memory device according to the first embodiment in the method of accessing two PCM elements. The semiconductor device according to the comparative example also accesses two bits at the same time. For example, the driving circuit 100₂₂ drives the word line WL₂₂ to simultaneously access two PCM elements 11₂₃ and 11₂₄ disposed on the left side relative to the center of the word line WL₂₂ in FIG. 3. In this case, the bit lines BL₁₃ and BL₁₄ connected to the two PCM elements 11₂₃ and 11₂₄ are selected at the same time. Therefore, the addresses to be selected at the same time are assigned to the bit lines BL₁₃ and BL₁₄. When a current is supplied between the word line WL₂₂ and the bit lines BL₁₃ and BL₁₄ by means of the driving circuit 100₂₂, a current I₁ flows through the PCM element 11₂₃ and a current I₂ flows through the PCM element 11₂₄.

When the bit lines BL₁₃ and BL₁₄ have the addresses to be selected at the same time, the driving circuit 100₁₁ drives the word line WL₁₁. As a result, the PCM elements 11₁₃ and 11₁₄ connected to the bit lines BL₁₃ and BL₁₄, respectively, are accessed. At this time, a current I₁ flows through the PCM element 11₁₃ and a current I₂ flows through the PCM element 11₁₄. Thus, when one of the word lines WL₁₁ of the first semiconductor memory 10₁ is driven, two bits (PCM elements 11₁₃ and 11₁₄) are accessed, and one of the word lines WL₂₂ of the second semiconductor memory 10₂ is driven, two bits (PCM elements 11₂₃ and 11₂₄) are selected. In this case, however, the accessed PCM elements are located on one side relative to the center of the driven word line. Therefore, the degree of voltage drop caused by a current that flows with the access becomes large. The large current decreases the operation margin.

FIG. 4 shows a case where one PCM element is selected from one side relative to the center of the word line, and the other PCM element is selected from the other side in order to reduce the influence of the voltage drop. The semiconductor memory device shown in FIG. 4 has the same structure as the semiconductor memory device shown in FIG. 3. For example, the driving circuit 100₂₂ drives the word line WL₂₂ to simultaneously access the PCM element 11₂₃ located on one side relative to the center of the word line WL₂₂ and the PCM element 11₂₅ located on the other side. In this case, addresses to be selected at the same time are provided to the bit line BL₁₃ and the bit line BL₁₅ connected to the PCM element 11₂₃ and the PCM element 11₂₅, respectively. When the driving circuit 100₂₂ drives the PCM element 11₂₃ and the PCM element 11₂₄ via the word line WL₂₂, a current I₁ is supplied to the PCM element 11₂₃ and a current I₂ is supplied to the PCM element 11₂₄.

The addresses to be selected at the same time have been given to the bit line BL₁₃ and the bit line BL₁₅. Then, the driving circuit 100₁₁ drives the word line WL₁₁ to simultaneously access the PCM element 11₁₁ located on the one side relative to the center and the PCM element 11₁₃ located on the other side. This means that the driving circuit 100₁₁ supplies a current I₁ and a current I₂ to the PCM element 11₁₁ and the PCM element 11₁₃ via the word line WL₁₁. When the addresses to be selected at the same time are provided to the bit line BL₁₃ and the bit line BL₁₅, the bit line BL₁₁ to which the PCM element 11₁₁ is connected and the bit line BL₁₃ to which the PCM element 11₁₃ is connected need to have the addresses to be selected at the same time. Thus, if the word line WL₂₂ is driven, the addresses to be selected at the same time need to be provided to the bit line BL₁₃ and the bit line BL₁₅, and if the word line WL₁₁ is driven, the addresses to be selected at the same time need to be provided to the bit line BL₁₁ and the bit line BL₁₃. This causes a problem in that the assignment of addresses to be selected to bit lines becomes complicated.

In contrast, when two PCM elements (for example, the PCM elements 11₂₃ and 11₂₅), one ends of which are electrically connected to a single word line (for example, the word line WL₂₂), are accessed at the same time in the first embodiment shown in FIG. 1, two other PCM elements (for example, the PCM elements 11₁₃ and 11₁₅), one ends of which are connected to two bit lines (for example, the bit lines BL₁₃ and BL₁₅), to which the other ends of the previously accessed two PCM elements 11₂₃ and 11₂₅ are connected, are also made accessible at the same time. Therefore, the control circuit 200 also controls the word lines (for example, the word lines WL₁₁ and WL₁₂) to which the other ends of the PCM elements (the PCM elements 11₁₃ and 11₁₅) are connected. One of the two PCM elements, one ends of which are electrically connected to the single word line (the word line WL₂₂) and which are accessible at the same time, is disposed on one side relative to the center of the single word line, and the other is disposed on the other side. This may leads to the reduction of the influence of a voltage drop caused by a read current or a write current, thereby curbing the decrease in operation margin. The two word lines (the word lines WL₁₁ and WL₁₂) that are selected later are adjacent to each other in the same semiconductor memory (for example, the semiconductor memory 10₁). This may prevent the complication in assigning addresses to be selected at the same time.

As described above, the semiconductor memory device according to the first embodiment may be capable of preventing the decrease in operation margin and also the complication in assigning addresses to be selected simultaneously.

Second Embodiment

A semiconductor memory device according to a second embodiment will be described with reference to FIGS. 5 and 6. The semiconductor memory device according to the second embodiment has a structure in which first to fourth semiconductor memories 10₁, 10₂, 10₃, and 10₄ of a crosspoint type are stacked in the z direction (vertical direction in FIGS. 5 and 6).

The first semiconductor memory 10₁ includes a plurality of (three in FIG. 5) word lines WL₁₁, WL₁₂, and WL₁₃, a plurality of (eight in FIG. 5) PCM elements 11₁₃ to 11₁₁₀, and a plurality of (eight in FIG. 5) bit lines BL₁₃ to BL₁₁₀. The word lines WL₁₂, and WL₁₃, the PCM elements 11₁₃ to 11₁₁₀, and the bit lines BL₁₃ to BL₁₁₀ are disposed at different levels in the z direction.

The word lines WL₁₁, the word line WL₁₂, and the word line WL₁₃ extend in the lateral direction to the plane of paper (y direction). The bit lines BL₁₃ to BL1₁₁₀ extend in the direction perpendicular to the plane of paper of FIG. 5 (x direction). One end of each of the storage elements (PCM elements) 11₁₃ and 11₁₄ is electrically connected to the word line WL₁₁, and one end of each of the storage elements (PCM elements) 11₁₅ to 11₁₈ is electrically connected to the word line WL₁₂. One end of each of the storage elements (PCM elements) 11₁₉ and 11₁₁₀ is electrically connected to the word line WL₁₃. The other end of the PCM element 11_1i (i=3, . . . , 10) is connected to the bit line BL_1i.

The second semiconductor memory 10₂ includes a plurality of (two in FIG. 5) word lines WL₂₂ and WL₂₃, a plurality of (eight in FIG. 5) PCM elements 11₂₃ to 11₂₁₀, and a plurality of (eight in FIG. 5) bit lines BL₁₃ to BL₁₁₀. Thus, the first semiconductor memory 10₁ and the second semiconductor memory 10₂ share the plural (eight in FIG. 5) bit lines BL₁₃ to BL1₁₁₀. The word lines WL₂₂ and WL₂₃, the PCM elements 11₂₃ to 11₂₁₀, and the bit lines BL₁₃ to BL₁₁₀ are disposed at different levels in the z direction.

The word lines WL₂₂ and WL₂₃ extend in the y direction. The word lines are arranged so that a central portion of the word line WL₁₂ included in the first semiconductor memory 10₁ is located below a space between the word line WL₂₂ and the word line WL₂₃, a central portion of the word line WL₂₂ included in the second semiconductor memory 10₂ is located above a space between the word line WL₁₁ and the word line WL₁₂, and a central portion of the word line WL₂₃ included in the second semiconductor memory 10₂ is located above a space between the word line WL₁₂ and the word line WL₁₃. Thus, the positions in the y direction of the word lines WL₁₁, WL₁₂, and WL₁₃ included in the first semiconductor memory 10₁ and the positions in the y direction of the word lines WL₂₂ and WL₂₃ included in the second semiconductor memory 10₂ are not the same.

One end of each of the PCM elements 11₂₃ to 11₂₆ is electrically connected to the word line WL₂₂, and one end of each of the PCM elements 11₂₇ to 11₂₁₀ is electrically connected to the word line WL₂₃. The other end of the PCM element 11₂, (i=3, . . . , 10) is electrically connected to the bit line BL_1i.

The third semiconductor memory 10₃ includes a plurality of (two in FIG. 5) word lines WL₂₂ and WL₂₃, a plurality of (eight in FIG. 5) PCM elements 11₃₃ to 11₃₁₀, and a plurality of (eight in FIG. 5) bit lines BL₂₃ to BL₂₁₀. Thus, the second semiconductor memory 10₂ and the third semiconductor memory 10₃ share the word lines WL₂₂ to WL₂₃. The bit lines BL₂₃ to BL₂₁₀ extend in the x direction. The word lines WL₂₂ and WL₂₃, the PCM elements 11₃₃ to 11₃₁₀, and the bit lines BL₂₃ to BL₂₁₀ are disposed at different levels in the z direction.

One end of each of the PCM elements 11₃₃ to 11₃₆ is electrically connected to the word line WL₂₂, and one end of each of the PCM elements 11₃₇ to 11₃₁₀ is electrically connected to the word line WL₂₃. The other end of the PCM element 11_3i (i=3, . . . , 10) is electrically connected to the bit line BL_2i.

The fourth semiconductor memory 10₄ includes a plurality of (three in FIG. 5) word lines WL₃₁, WL₃₂, and WL₃₃, a plurality of (eight in FIG. 5) PCM elements 11₄₃ to 11₄₁₀, and a plurality of (eight in FIG. 5) bit lines BL₂₃ to BL₂₁₀. Thus, the fourth semiconductor memory 10₄ and the third semiconductor memory 10₃ share the bit lines BL₂₃ to BL₂₁₀. The word lines WL₃₁, WL₃₂, and WL₃₃, the PCM elements 11₄₃ to 11₄₁₀, and the bit lines BL₂₃ to BL₂₁₀ are disposed at different levels in the z direction.

The word lines WL₃₁, WL₃₂, and WL₃₃ extend in the y direction. The word lines are arranged so that a region between the word line WL₂₂ and the word line WL₂₃ included in the third semiconductor memory 10₃ is disposed below a central portion of the word line WL₃₂ of the fourth semiconductor memory 10₄, a region between the word line WL₃₁ and the word line WL₃₂ is disposed above the central portion of the word line WL₂₂, and a region between the word line WL₃₂ and the word line WL₃₃ is disposed above the central portion of the word line WL₂₃. Thus, the positions in the y direction of the word lines WL₃₁, WL₃₂, and WL₃₃ included in the fourth semiconductor memory 10₄ and the positions in the y direction of the word lines WL₂₂ and WL₂₃ included in the third semiconductor memory 10₃ are not the same.

One end of each of the PCM elements 11₄₃ and 11₄₄ is electrically connected to the word line WL₃₁. One end of each of the PCM elements 11₄₅ to 11₄₈ is electrically connected to the word line WL₃₂. One end of each of the PCM elements 11₄₉ and 11₄₁₀ is electrically connected to the word line WL₃₃. The end of the PCM element 11_4i, (i=3, . . . , 10) is electrically connected to the bit line BL_2i.

One ends of two PCM elements that are not shown are electrically connected to each of the word lines WL₁₁ and WL₁₃, and the other ends are electrically connected to bit lines that are not shown. One ends of two PCM elements that are not shown are electrically connected to each of the word lines WL₃₁ and WL₃₃, and the other ends are electrically connected to bit lines that are not shown. Thus, in the semiconductor memory according to the second embodiment shown in FIG. 5, one end of each of four PCM elements is electrically connected to a word line. However, the number of electrically connected PCM elements may be more than four.

In the second embodiment, the word lines WL₁₁, WL₁₂, WL₁₃, WL₂₂, WL₂₃, WL₃₁, WL₃₂, and WL₃₃ are located on a section of the semiconductor device sectioned by a y-z plane. Therefore, for example, the same physical row address may be given to those word lines.

The semiconductor memory device according to the second embodiment also includes driving circuits 100₁₂, 100₂₂, and 100₂₃ that drive the respective word lines and a control circuit 200. In the case of FIG. 5, for example, the driving circuit 100₂₂ is provided to deal with the word line WL₂₂, the driving circuit 100₁₂ is provided to deal with the word lines WL₁₂ and WL₃₂, and the driving circuit 100₂₃ is provided to deal with the word line WL₂₃. Thus, in the second embodiment, the word line WL₁₂ included in the first semiconductor memory 10₁ and the word line WL₃₂ included in the fourth semiconductor memory 10₄ and disposed at a position corresponding to that of the word line WL₁₂ are connected to the same driving circuit 100₁₂. Each driving circuit is electrically connected to a central portion of the corresponding word line. Each of the driving circuits supplies a write current or a read current to a PCM element to be accessed via a corresponding word line. The PCM elements connected to each word line are divided into two groups at the center of the word line. The number of PCM elements included in one of the two groups may be the same as or different from the number of PCM elements included in the other.

Each driving circuit includes a p-channel transistor and an n-channel transistor connected in series. The gate of each of the series-connected p-channel transistor and n-channel transistor is connected to the control circuit 200. An intermediate node (connection node) of the series-connected transistors is electrically connected to a central portion of the corresponding word line. The control circuit 200 also controls the corresponding bit line connected to the PCM element to be accessed.

The semiconductor memory device according to the second embodiment having the above-described structure is capable of accessing two bits at a time. For example, the control circuit 200 selects the driving circuit 100₁₂ to access a PCM element 11₁₇ included in a group on the right side relative to the center of the word line WL₁₂, and to access a PCM element 11₄₅ included in a group on the left side relative to the center of the word line WL₃₂. At this time, the control circuit 200 also selects the bit lines BL₁₇ and BL₂₅.

Thereafter, the driving circuit 100₁₂ supplies a current to the PCM element 11₁₇ via the word line WL₁₂ and to the PCM element 11₄₅ via the word line WL₃₂ in order to perform a write operation or a read operation. At this time, addresses to be selected at the same time are assigned to the bit line BL₁₇ and the bit line BL₂₅ electrically connected to the PCM element 11₁₇ and the PCM element 11₄₅, respectively, in this embodiment.

After the addresses to be selected at the same time are assigned to the bit line BL₁₇ and the bit line BL₄₅, the control circuit 200 uses the driving circuit 100₂₃ to drive the word line WL₂₃ and selects the bit line BL₁₇ to access the PCM element 11₂₇ that is electrically connected between the word line WL₂₃ and the bit line BL₁₇ as shown in FIG. 6. At this time, the bit line BL₂₅, to which the address to be selected is assigned at the same time as the bit line BL₁₇, has been selected. Therefore, in the second embodiment, the control circuit 200 drives the word line WL₂₂ by means of the driving circuit 100₂₂. As a result, the PCM element 11₃₅ that is electrically connected to the bit line BL₂₅ and the word line WL₂₂ is also accessed. Thus, the PCM element 11₃₅ and the PCM element 11₂₇, which make two bits, can be accessed simultaneously. A write operation or a read operation may be performed by supplying a current I to the PCM element 11₃₅ and the PCM element 11₂₇ via the word line WL₂₂ and the word line WL₂₃, respectively, as shown in FIG. 6.

As described above, when two PCM elements (for example, the PCM elements 11₁₇ and 11₄₅), one ends of which are electrically connected to two word lines WL₁₂ and WL₃₂, are simultaneously accessed, two PCM elements (for example, the PCM elements 11₂₇ and 11₃₅), one ends of which are connected to two bit lines (for example, the bit lines BL₁₇ and BL₂₅), to which the other ends of the previously accessed two PCM elements (the PCM elements 11₁₇ and 11₄₅) are electrically connected, are accessible. The control circuit 200 then controls two word lines (for example, the word lines WL₂₂ and WL₂₃), to which the other ends of the PCM elements to be accessed (the PCM elements 11₂₇ and 11₃₅) are connected, so that they may be accessed simultaneously. When two PCM elements that are electrically connected to a word line are simultaneously accessed, one of the two PCM elements that are electrically connected to the word line is disposed on the right side relative to the center of the word line, and the other is disposed on the left side. This may reduce the influence of a voltage drop caused by a read current or a write current, and may prevent the decrease in operation margin. The two driven word lines (the word lines WL₂₂ and WL₂₃) are adjacent to each other in the same semiconductor memory (for example, the semiconductor memory 10₂). This may prevent the complication in assigning addresses simultaneously.

In the second embodiment, when two PCM elements (for example, the PCM elements 11₁₅ and 11₁₇), one ends of which are electrically connected to a single word line (for example, the word line WL₁₂), are accessed at the same time, like the first embodiment, two other PCM elements (for example, the PCM elements 11₂₅ and 11₂₇), one ends of which are connected to two bit lines (for example, the bit lines BL₁₅ and BL₁₇), to which the other ends of the previously accessed two PCM elements (the PCM elements 11₁₅ and 11₁₇) are electrically connected, are also made accessible at the same time. In order to do so, the control circuit 200 controls the two word lines (for example, the word lines WL₂₂ and WL₂₃), to which the other ends of the PCM elements (the PCM elements 11₁₅ and 11₁₇) are connected, so that the two word lines become accessible. One of the two PCM elements, one ends of which are electrically connected to the single word line (the word line WL₁₂) and which are accessible at the same time, is disposed on one side relative to the center of the word line, and the other is disposed on the other side. Also in this case, the influence of the voltage drop caused by the read current or the write current may be reduced, and the decrease in operation margin may be prevented. The two word lines that are driven later (the word lines WL₂₂ and WL₂₃) are adjacent to each other in the same semiconductor memory (for example, the semiconductor memory 10₂). This may prevent the complication in assigning addresses to be selected simultaneously.

The semiconductor memory device having the above-described structure may prevent the decrease in operation margin, and may prevent the complication in assigning addresses to be selected simultaneously.

Third Embodiment

A semiconductor memory device according to a third embodiment will be described with reference to FIG. 7. The semiconductor memory device according to the third embodiment has a structure obtained by further stacking a fifth semiconductor memory 10₅, a sixth semiconductor memory 10₆, a seventh semiconductor memory 10₇, and an eighth semiconductor memory 10₈ in this order in the z direction on the semiconductor memory device according to the second embodiment shown in FIG. 5. The fifth to eighth semiconductor memories 10₅ to 10₈ each have a crosspoint architecture.

The fifth semiconductor memory 10₅ includes a plurality of (three in FIG. 7) word lines WL₃₁, WL₃₂, and WL₃₃, a plurality of (eight in FIG. 7) PCM elements 11₅₃ to 11₅₁₀, and a plurality of (eight in FIG. 7) bit lines BL₃₃ to BL₃₁₀. Thus, the fifth semiconductor memory 10₅ and the fourth semiconductor memory 10₄ share the word lines WL₃₁ to WL₃₃. The word lines WL₃₁, WL₃₂, and WL₃₃ extend in the y direction. The bit lines BL₃₃ to BL₃₁₀ extend in the x direction. The word lines WL₃₁, WL₃₂, and WL₃₃, the PCM elements 11₅₃ to 11₅₁₀, and the bit lines BL₃₃ to BL₃₁₀ are disposed at different levels in the z direction.

One ends of the PCM elements 11₅₃ and 11₅₄ are electrically connected to the word line WL₃₁, one end of the PCM element 11_3i (i=5, . . . , 8) is electrically connected to the word line WL₃₂, and one ends of the PCM elements 11₅₉ and 11₅₁₀ are electrically connected to the word line WL₃₃. The other end of each PCM element 11_5i (i=3, . . . , 10) is electrically connected to the bit line BL_3i.

The sixth semiconductor memory 10₆ includes a plurality of (two in FIG. 7) word lines WL₄₂ and WL₄₃, a plurality of (eight in FIG. 7) PCM elements 11₆₃ to 11₆₁₀, and a plurality of (eight in FIG. 7) bit lines BL₃₃ to BL1₃₁₀. Thus, the sixth semiconductor memory 10₆ and the fifth semiconductor memory 10₅ share the bit lines BL₃₃ to BL1₃₁₀. The word lines WL₄₂ and WL₄₃ extend in the y direction. The word lines WL₄₂ and WL₄₃, the PCM elements 11₆₃ to 11₆₁₀, and the bit lines BL₃₃ to BL1₃₁₀ are disposed at different levels in the z direction.

The central portion of the word line WL₃₂ included in the fifth semiconductor memory 10₅ is located below a space between the word line WL₄₂ and the word line WL₄₃, a central portion of the word line WL₄₂ included in the sixth semiconductor memory 10₆ is located above a space between the word line WL₃₁ and the word line WL₃₂, and a central portion of the word line WL₄₃ included in the sixth semiconductor memory 10₆ is located above a space between the word line WL₃₂ and the word line WL₃₃. Thus, the positions in the y direction of the word lines WL₃₁, WL₃₂, and WL₃₃ included in the fifth semiconductor memory 10₅ and the positions in the y direction of the word lines WL₄₂ and WL₄₃ included in the sixth semiconductor memory 10₆ are not the same.

One end of each of the PCM elements 11₆₃ to 11₆₆ is electrically connected to the word line WL₄₂, and one end of each of the PCM elements 11₆₇ to 11₆₁₀ is electrically connected to the word line WL₄₃. The other end of the PCM element 11_6i (i=3, . . . , 10) is electrically connected to the bit line BL_3i.

The seventh semiconductor memory 10₇ includes a plurality of (two in FIG. 7) word lines WL₄₂ and WL₄₃, a plurality of (eight in FIG. 7) PCM elements 11₇₃ to 11₇₁₀, and a plurality of (eight in FIG. 7) bit lines BL₄₃ to BL₄₁₀. Thus, the seventh semiconductor memory 10₇ and the sixth semiconductor memory 10₆ share the word lines WL₄₂ and WL₄₃. The bit lines BL₄₃ to BL₄₁₀ extend in the x direction. The word lines WL₄₂ and WL₄₃, the PCM elements 11₇₃ to 11₇₁₀, and the bit lines BL₄₃ to BL₄₁₀ are disposed at different levels in the z direction.

One end of each of the PCM elements 11₇₃ to 11₇₆ is electrically connected to the word line WL₄₂, and one end of each of the PCM elements 11₇₇ to 11₇₁₀ is electrically connected to the word line WL₄₃. The other end of the PCM element 11₇, (i=3, . . . , 10) is electrically connected to the bit line BL_4i.

The eighth semiconductor memory 10₈ includes a plurality of (three in FIG. 7) word lines WL₅₁, WL₅₂, and WL₅₃, a plurality of (eight in FIG. 7) PCM elements 11₈₃ to 11₈₁₀, and a plurality of (eight in FIG. 7) bit lines BL₄₃ to BL₄₁₀. Thus, the eighth semiconductor memory 10₈ and the seventh semiconductor memory 10₇ share the bit lines BL₄₃ to BL₄₁₀. The word lines WL₅₁, WL₅₂, and WL₅₃, the PCM elements 11₈₃ to 11₈₁₀, and the bit lines BL₄₃ to BL₄₁₀ are disposed in different levels in the z direction.

The word lines WL₅₁, WL₅₂, and WL₅₃ extend in the y direction. A region between the word line WL₄₂ and the word line WL₄₃ is located below a central portion of the word line WL₅₂ included in the eighth semiconductor memory 10₈, a region between the word line WL₅₁ and the word line WL₅₂ is located above the central portion of the word line WL₄₂, and a region between the word line WL₅₂ and the word line WL₅₃ are located above the central portion of the word line WL₄₃. Thus, the positions in the y direction of the word lines WL₅₁, WL₅₂, and WL₅₃ included in the eighth semiconductor memory 10₈ and the positions in the y direction of the word lines WL₄₂ and WL₄₃ included in the seventh semiconductor memory 10₇ are not the same.

One end of each of the PCM elements 11₈₃ and 11₈₄ is electrically connected to the word line WL₅₁. One end of each of the PCM elements 11₈₅ to 11₈₈ is electrically connected to the word line WL₅₂. One end of each of the PCM elements 11₈₉ and 11₈₁₀ is electrically connected to the word line WL₅₃. The other end of the PCM element 11₈, (i=3, . . . , 10) is electrically connected to the bit line BL_4i.

One ends of two PCM elements that are not shown are electrically connected to each of the word lines WL₃₁ and WL₃₃, and the other ends are electrically connected to bit lines that are not shown. One ends of two PCM elements that are not shown are electrically connected to each of the word lines WL₅₁ and WL₅₃, and the other ends are electrically connected to bit lines that are not shown. Therefore, four PCM elements are electrically connected to each word line of the semiconductor memory according to the third embodiment shown in FIG. 7. The number of PCM elements electrically connected to each word line may be greater than four.

The semiconductor memory device according to the third embodiment includes driving circuits 100₂₂, 100₁₂, and 100₂₃ that drive respective word lines, and a control circuit 200. In the case of FIG. 7, for example, the driving circuit 100₂₂ is provided to deal with the word lines WL₂₂ and WL₄₂, the driving circuit 100₁₂ is provided to deal with the word lines WL₁₂, and WL₅₂, and the driving circuit 100₂₃ is provided to deal with the word lines WL₂₃ and WL₄₃. Thus, in the third embodiment, the word line WL₁₂ of the first semiconductor memory 10₁, and the word line WL₃₂ of the fourth semiconductor memory 10₄ and the word line WL₅₂ of the eighth semiconductor memory 10₈, which are arranged at positions corresponding to the position of the word line WL₁₂, are connected to the same driving circuit 100₁₂. The word line WL₂₂ of the second semiconductor memory 10₂ and the word line WL₄₂ of the sixth semiconductor memory 10₆, which is arranged at a position corresponding to the position of the word line WL₂₂, are connected to the driving circuit 100₂₂. The word line WL₂₃ of the second semiconductor memory 10₂ and the word line WL₄₃ of the sixth semiconductor memory 10₆, which is arranged at a position corresponding to the position of the word line WL₂₃, are connected to the driving circuit 100₂₃.

In the third embodiment, the word lines WL₁₁, WL₁₂, WL₁₃, WL₂₂, WL₂₃, WL₃₁, WL₃₂, WL₃₃, WL₄₂, WL₄₃, WL₅₁, WL₅₂, and WL₅₃ are located on a section of the semiconductor memory device sectioned by a y-z plane. Therefore, the same physical row address may be given to those word lines, for example.

Each of the driving circuits is electrically connected to the center of the corresponding word line. Each driving circuit supplies a write current or a read current to the PCM element to be accessed via the corresponding word line. The PCM elements connected to each word line are divided into two groups at the center of the word line. The number of PCM elements included in one group may be the same or different from the number of PCM elements included in the other group.

Each driving circuit includes a p-channel transistor and an n-channel transistor that are connected in series. An intermediate node (connection node) of the series-connected transistors is electrically connected to a central portion of the corresponding word line. The control circuit 200 controls the bit line corresponding to the PCM element to be accessed.

The semiconductor memory device according to the third embodiment having the above-described structure is capable of accessing two bits at a time. For example, as shown in FIG. 7, the control circuit 200 selects the driving circuit 100₁₂ to access the PCM element 11₁₈ arranged on the right side relative to the center of the word line WL₁₂, and to access the PCM element 11₅₆ arranged on the left side relative to the center of the word line WL₃₂. At this time, the control circuit 200 also selects the bit lines BL₁₈ and BL₃₆.

In this case, the driving circuit 100₁₂ supplies a current I₁ indicated by a solid line to the PCM element 11₁₈ via the word line WL₁₂ and to the PCM element 11₅₆ via the word line WL₃₂ to perform a write operation or a read operation. At this time, addresses to be selected at the same time are provided to the bit line BL₁₈ and the bit line BL₃₆, which are electrically connected to the PCM element 11₁₈ and the PCM element 11₅₆, respectively, in the third embodiment.

As described before, after the addresses to be selected at the same time are provided to the bit line BL₁₈ and the bit line BL₃₆, the control circuit 200 drives the word line WL₂₃ by means of the driving circuit 100₂₃, and selects the bit line BL₁₈ to access the PCM element 11₂₈ electrically connected between the word line WL₂₃ and the bit line BL₁₈. At this time, the bit line BL₃₆, to which the address to be selected has been assigned at the same time as the bit line BL₁₈, has been selected. Therefore, in the third embodiment, the control circuit 200 drives the word line WL₄₂ by means of the driving circuit 100₂₂. As a result, the PCM element 11₆₆ that is electrically connected to the bit line BL₃₆ and the word line WL₄₂ is accessed. Thus, the PCM element 11₆₆ and the PCM element 11₂₈, which makes two bits, can be simultaneously accessed. A write operation or a read operation may be performed by supplying a current I₂ indicated by a broken line to the PCM element 11₆₆ and the PCM element 11₂₈ via the word line WL₄₂ and the word line WL₂₃, respectively, as shown in FIG. 7.

As described above, when two PCM elements (for example, the PCM elements 11₁₈ and 11₅₆), one ends of which are electrically connected to two word lines WL₁₂ and WL₃₂, are simultaneously accessed, the control circuit 200 also controls two other word lines (for example, the word lines WL₂₃ and WL₄₂) to be accessed. The other ends of two PCM elements (for example, the PCM elements 11₂₈ and 11₆₆), one ends of which are connected to two bit lines (for example, the bit lines BL₁₈ and BL₃₆) that are electrically connected to the other ends of the previously accessed two PCM elements, are connected to the two other word lines. When two PCM elements that are electrically connected to a word line are simultaneously accessed, one of the two PCM elements is disposed on the right side relative to the center of the word line, and the other is disposed on the left side. This may reduce the influence of a voltage drop caused by a read current or a write current, and may prevent the decrease in operation margin.

The semiconductor memory device according to the third embodiment is capable of accessing two bits in the manner described in the descriptions of the second embodiment.

As described above, the semiconductor memory device according to the third embodiment may prevent the decrease in operation margin, and prevent the complication in assigning addresses to be selected simultaneously.

Although the PCM elements 11₁₈ and 11₅₆ are selected from those connected to the two word lines WL₁₂ and WL₃₂ that are connected to the same driving circuit (for example the driving circuit 100₁₂) in the third embodiment, the PCM elements (for example, the PCM elements 11₁₈ and 11₈₆) may be selected from those connected to other word lines (for example the word lines WL₁₂ and WL₅₂) connected to the driving circuit 100₁₂. In this case, the PCM element selected via one word line is located on one side (for example, right side) relative to the center of the word line, and the PCM element selected via the other word line is located on the other side (for example, left side) relative to the center of the other word line. In this case, addresses to be selected at the same time are assigned to the bit line BL₁₈ and the bit line BL₄₆. Therefore, after a PCM element (for example, the PCM element 11₇₆) connected to one of the bit lines BL₁₈ and BL₄₆ is selected, a PCM element 11₂₈, which is connected to the bit line BL₁₈, to which the address has been assigned at the same time as the bit line BL₄₆, may be selected to perform two-bit access.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.

Claims

1. A semiconductor memory device, comprising: a first wiring disposed at a first level and extending in a first direction;a second wiring and a third wiring disposed at a second level and extending in the first direction to be separate from each other, a position of the second level in a second direction that is perpendicular to the first direction being different from a position of the first level in the second direction;a plurality of fourth wirings disposed at a third level between the first level and the second level, the fourth wirings extending in a third direction crossing the first direction and the second direction;a plurality of first resistive change elements disposed in intersection regions of the first wiring and the fourth wirings, each of the first resistive change elements including a first terminal and a second terminal, the first terminal being electrically connected to the first wiring, and the second terminal being electrically connected to corresponding one of the fourth wirings;a plurality of second resistive change elements disposed in intersection regions between the second wiring and the fourth wirings and between the third wiring and the fourth wirings, each of the second resistive change element including a third terminal and a fourth terminal, the third terminal being electrically connected to a corresponding wiring selected from the second wiring and the third wiring, and the fourth terminal being electrically connected to corresponding one of the fourth wirings;a first driving circuit electrically connected to the first wiring, a second driving circuit electrically connected to the second wiring, and a third driving circuit electrically connected to the third wiring; anda control circuit that controls the first driving circuit, the second driving circuit, and the third driving circuit, and also the fourth wirings,the first resistive change elements being divided into a first group located on one side and a second group located on another side relative to a portion of the first wiring,the second resistive change elements, the third terminal of each of which is electrically connected to the second wiring, being divided into a third group located on one side and a fourth group located on another side relative to a portion of the second wiring, and the second resistive change elements, the third terminal of each of which is electrically connected to the third wiring, being divided into a fifth group located on one side and a sixth group located on another side relative to a portion of the third wiring,the control circuit selecting the first driving circuit to select the first wiring connected to the first driving circuit that is selected, selecting one of the first resistive change elements in the first group, selecting one of the first resistive change elements in the second group, during an operation to access the two first resistive change elements that are selected, providing addresses to be selected simultaneously to two of the fourth wirings, to which the second terminals of the two first resistive change elements that are selected are connected, and providing addresses to be selected simultaneously to the second wiring and the third wiring, to which the third terminals of two second resistive change elements are connected, the fourth terminals of the two second resistive change elements being connected to the two of the fourth wirings.

2. The semiconductor memory device according to claim 1, wherein a region between the second wiring and the third wiring is aligned with the portion of the first wiring in the second direction.

3. The semiconductor memory device according to claim 1, wherein at least one of the first resistive change elements and the second resistive change elements contain a chalcogenide.

4. A semiconductor memory device, comprising: a first wiring disposed at a first level and extending in a first direction;a second wiring and a third wiring disposed at a second level and extending in the first direction to be separate from each other, a position of the second level in a second direction that is perpendicular to the first direction being different from a position of the first level in the second direction;a plurality of fourth wirings disposed at a third level between the first level and the second level, the fourth wirings extending in a third direction crossing the first direction and the second direction;a plurality of first resistive change elements disposed in intersection regions of the first wiring and the fourth wirings, each of the first resistive change elements including a first terminal and a second terminal, the first terminal being electrically connected to the first wiring, and the second terminal being electrically connected to corresponding one of the fourth wirings;a plurality of second resistive change elements disposed in intersection regions between the second wiring and the fourth wirings and between the third wiring and the fourth wirings, each of the second resistive change element including a third terminal and a fourth terminal, the third terminal being electrically connected to a corresponding wiring selected from the second wiring and the third wiring, and the fourth terminal being electrically connected to corresponding one of the fourth wirings;a fifth wiring disposed at a fourth level, a position of the fourth level in the second direction being different from the positions of the first level, the second level, and the third level in the second direction, the second level being located between the fourth level and the third level, the fifth wiring extending in the first direction;a plurality of sixth wirings disposed at a fifth level between the fourth level and the second level, the sixth wirings extending in the third direction;a plurality of third resistive change elements disposed in intersection regions between the fifth wiring and the sixth wirings, each of the third resistive change elements including a fifth terminal and a six terminal, the fifth terminal being electrically connected to the fifth wiring, and the six terminal being electrically connected to corresponding one of the sixth wirings; anda plurality of fourth resistive change elements disposed in intersection regions between the second wiring and the sixth wirings and between the third wiring and the sixth wirings, each of the fourth resistive change elements including a seventh terminal and an eighth terminal, the seventh terminal being electrically connected to corresponding one of the second wiring and the third wiring, and the eighth terminal being electrically connected to corresponding one of the sixth wirings,the first resistive change elements being divided into a first group located on one side and a second group located on another side relative to a portion of the first wiring,the second resistive change elements, the third terminal of each of which is electrically connected to the second wiring, being divided into a third group located on one side and a fourth group located on another side relative to a portion of the second wiring, and the second resistive change elements, the third terminal of each of which is electrically connected to the third wiring, being divided into a fifth group located on one side and a sixth group located on another side relative to a portion of the third wiring,the third resistive change elements being divided into a seventh group located on one side and an eighth group located on another side relative to a portion of the fifth wiring,the fourth resistive change elements, the seventh terminal of each of which is electrically connected to the second wiring, being divided into a ninth group located on one side and a tenth group located on another side relative to a portion of the second wiring, and the fourth resistive change elements, the seventh terminal of each of which is electrically connected to the third wiring, being divided into an eleventh group located on one side and a twelfth group located on another side relative to a portion of the third wiring, andthe portion of the first wiring being electrically connected to the portion of the fifth wiring.

5. The semiconductor memory device according to claim 4, wherein a region between the second wiring and the third wiring is aligned with the portion of the first wiring in the second direction, and the region between the second wiring and the third wiring is aligned with the portion of the fifth wiring in the second direction.

6. The semiconductor memory device according to claim 4, wherein at least one of the first resistive change elements, the second resistive change elements, the third resistive change elements, and the fourth resistive change elements contains a chalcogenide.

7. The semiconductor memory device according to claim 4, further comprising: a first driving circuit electrically connected to the first wiring and the fifth wiring;a second driving circuit electrically connected to the second wiring;a third driving circuit electrically connected to the third wiring; anda control circuit that controls the first driving circuit, the second driving circuit, and the third driving circuit, and also the fourth wirings and the sixth wirings,wherein the control circuit selects the first driving circuit to select the first wiring and the fifth wiring connected to the first driving circuit, selects one of the first resistance elements in the first group and the second group and one of the third resistive change elements in the seventh group and the eighth group, the one of the first resistive change elements selected from the first group and the second group and the one of the third resistive change elements selected from the seventh group and the eighth group being located on opposite sides relative to a straight line connecting the portion of the first wiring and the portion of the fifth wiring, during an operation to access the one of the first resistive change elements that is selected and the one of the third resistive change elements that is selected, provides addresses to be selected simultaneously to the fourth wiring to which the second terminal of the one of the first resistive change elements that is selected is connected and the sixth wiring to which the six terminal of the one of the third resistive change elements that is selected is connected, and provides addresses to be selected simultaneously to one of the second wiring and the third wiring, to which the third terminal of the second resistive change element is connected, the fourth terminal of the second resistive change element being connected to the fourth wiring to which the address is provided, and the other of the second wiring and the third wiring, to which the seventh terminal of the fourth resistive change element is connected, the eighth terminal of the fourth resistive change element being connected to the sixth wiring to which the address is provided.

8. The semiconductor memory device according to claim 7, wherein a region between the second wiring and the third wiring is aligned with the portion of the first wiring in the second direction, and the region between the second wiring and the third wiring is aligned with the portion of the fifth wiring in the second direction.

9. The semiconductor memory device according to claim 7, wherein at least one of the first resistive change elements, the second resistive change elements, the third resistive change elements, and the fourth resistive change elements contains a chalcogenide.

10. The semiconductor memory device according to claim 4, further comprising: a seventh wiring and an eighth wiring disposed at a sixth level and extending in the first direction to be separate from each other, a position of the sixth level in the second direction being different from the positions of the first level, the second level, the third level, the fourth level, and the fifth level in the second direction, the fourth level being located between the sixth level and the fifth level;a plurality of ninth wirings disposed at a seventh level and extending in the third direction, the seventh level between the sixth level and the fourth level;a plurality of fifth resistive change elements disposed in intersection regions between the seventh wiring and the ninth wirings and between the eighth wiring and the ninth wirings, each of the fifth resistive change elements including a ninth terminal and a tenth terminal, the ninth terminal being electrically connected to corresponding one of the seventh wiring and the eighth wiring, and the tenth terminal being electrically connected to corresponding one of the ninth wirings; anda plurality of sixth resistive change elements disposed in intersection regions between the fifth wiring and the ninth wirings, each of the sixth resistive change elements including an eleventh terminal and a twelfth terminal, the eleventh terminal being electrically connected to the fifth wiring, and the twelfth terminal being electrically connected to corresponding one of the ninth wirings,wherein the fifth resistive change elements, the ninth terminal of each of which is electrically connected to the seventh wiring, are divided into a thirteenth group located on one side and a fourteenth group located on another side relative to a portion of the seventh wiring,the fifth resistive change elements, the ninth terminal of each of which is electrically connected to the eighth wiring, are divided into a fifteenth group located on one side and a sixteenth group located on another side relative to a portion of the eighth wiring,the sixth resistive change elements are divided into a seventeenth group located on one side and an eighteenth group located on another side relative to the portion of the fifth wiring, andwherein the portion of the second wiring is electrically connected to the portion of the seventh wiring, and the portion of the third wiring is electrically connected to the portion of the eighth wiring.

11. The semiconductor memory device according to claim 10, wherein a region between the second wiring and the third wiring is aligned with the portion of the first wiring in the second direction, the region between the second wiring and the third wiring is aligned with the portion of the fifth wiring in the second direction, and a region between the seventh wiring and the eighth wiring is aligned with the portion of the fifth wiring in the second direction.

12. The semiconductor memory device according to claim 10, wherein at least one of the first resistive change elements, the second resistive change elements, the third resistive change elements, the fourth resistive change elements, the fifth resistive change elements, and the sixth resistive change elements contains a chalcogenide.

13. The semiconductor memory device according to claim 10, further comprising: a first driving circuit electrically connected to the first wiring and the fifth wiring;a second driving circuit electrically connected to the second wiring and the seventh wiring;a third driving circuit electrically connected to the third wiring and the eighth wiring; anda control circuit that controls the first driving circuit, the second driving circuit, and the third driving circuit, and also the fourth wirings, the sixth wirings, and the ninth wirings,wherein the control circuit selects the first driving circuit to select the first wiring and the fifth wiring connected to the first driving circuit, selects one of the first resistance change elements in the first group and the second group and one of the sixth resistive change elements in the seventeenth group and the eighteenth group, the one of the first resistive change elements selected from the first group and the second group and the one of the sixth resistive change elements selected from the seventeenth group and the eighteenth group being located on opposite sides relative to a straight line connecting the portion of the first wiring and the portion of the fifth wiring, during an operation to access the one of the first resistive change elements that is selected and the one of the sixth resistive change elements that is selected, provides addresses to be selected simultaneously to the fourth wiring to which the second terminal of the one of the first resistive change elements that is selected is connected and the ninth wiring to which the twelfth terminal of the one of the sixth resistive change elements that is selected is connected, and provides addresses to be selected simultaneously to one of the second wiring and the third wiring to which the third terminal of the second resistive change element is connected, the fourth terminal of the second resistive change element being connected to the fourth wiring to which the address is provided, and one of the seventh wiring and the eighth wiring to which the ninth terminal of the fifth resistive change element is connected, the tenth terminal of the fifth resistive change element being connected to the ninth wiring to which the address is provided.

14. The semiconductor memory device according to claim 13, wherein a region between the second wiring and the third wiring is aligned with the portion of the first wiring in the second direction, the region between the second wiring and the third wiring is aligned with the portion of the fifth wiring in the second direction, and a region between the seventh wiring and the eighth wiring is aligned with the portion of the fifth wiring in the second direction.

15. The semiconductor memory device according to claim 13, wherein at least one of the first resistive change elements, the second resistive change elements, the third resistive change elements, the fourth resistive change elements, the fifth resistive change elements, and the sixth resistive change elements contains a chalcogenide.