Patent Application
20250174466
An exemplary embodiment of the present disclosure relates to a substrate processing method and a substrate processing apparatus.
JP2021-523403A discloses a technique for forming a thin film that can be patterned on a semiconductor substrate using EUV light.
In an exemplary embodiment of the present disclosure, there is provided a substrate processing method including (a) providing a substrate having an underlying film and a resist film on the underlying film, the resist film including a first region and a second region, (b) removing at least a part of the second region to expose at least a part of a side surface of the first region, (c) forming a deposited film on at least an upper surface of the first region, and (d) removing at least a part of the deposited film and at least a part of the second region.
Hereinafter, each embodiment of the present disclosure will be described.
In an exemplary embodiment, a substrate processing method is provided. The substrate processing method including: (a) providing a substrate having underlying film and a resist film on the underlying film, the resist film including a first region and a second region; (b) removing at least a part of the second region to expose at least a part of a side surface of the first region; (c) forming a deposited film on at least an upper surface of the first region; and (d) removing at least a part of the deposited film and at least a part of the second region.
In an exemplary embodiment, the resist film is a photoresist film, the first region is a portion exposed in the resist film, and the second region is a portion not exposed in the resist film.
In an exemplary embodiment, the resist film is a metal-containing film.
In an exemplary embodiment, the metal-containing film includes at least one selected from the group consisting of Sn, Hf, and Ti.
In an exemplary embodiment, the metal-containing film is an EUV resist film.
In an exemplary embodiment, in the (b), a part of the second region is removed by using a first processing gas including at least one of a halogen containing inorganic acid and a carboxylic acid.
In an exemplary embodiment, in the (c), the deposited film is formed by plasma formed from a second processing gas including at least one of a carbon-containing gas and a silicon-containing gas.
In an exemplary embodiment, the second processing gas includes at least one selected from the group consisting of a CxHy gas, a CxFz gas, and a CxHyFz gas (x, y, and z are positive integers).
In an exemplary embodiment, the second processing gas includes at least one selected from the group consisting of SiCl4 and SiF4.
In an exemplary embodiment, in the (d), the second region is removed by a plasma formed from a third processing gas. In an exemplary embodiment, the third processing gas includes a gas containing at least one selected from the group consisting of a helium atom, a hydrogen atom, a bromine atom, and a chlorine atom.
In an exemplary embodiment, the (c) and the (d) are simultaneously executed.
In an exemplary embodiment, the (c) and the (d) are simultaneously executed by forming plasma with a second processing gas and a third processing gas, the second processing gas includes at least one of a carbon-containing gas and a silicon-containing gas, and the third processing gas includes at least one selected from the group consisting of a helium atom, a hydrogen atom, a bromine atom, and a chlorine atom.
In an exemplary embodiment, the deposited film is formed by the plasma formed from the second processing gas, and the second region of the resist film is removed by the plasma formed from the third processing gas.
In an exemplary embodiment, at least a part of the deposited film formed by the plasma formed from the second processing gas is removed by the plasma formed from the third processing gas.
In an exemplary embodiment, the (d) includes (d1) removing at least a part of the deposited film and a residue of the second region generated in the (b), and (d2) further removing the second region.
In an exemplary embodiment, the (c) and the (d1) are simultaneously executed.
In the exemplary embodiment, a cycle including the (c) and the (d1) is repeated a plurality of times.
In the exemplary embodiment, a cycle including the (b), the (c), and the (d1) is repeated a plurality of times.
In an exemplary embodiment, in the (b), the second region is removed to expose at least a part of the underlying film, and in the (d), at least a part of the deposited film and a residue of the second region generated in the (b) are removed.
In an exemplary embodiment, (e) etching the underlying film using the resist film on which the deposited film is formed as a mask after the (d) is further provided.
In an exemplary embodiment, the (d) and the (e) are executed in the same chamber.
In an exemplary embodiment, the (d) and the (e) are executed in different chambers.
In an exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus including: a chamber; a substrate support disposed in the chamber; and a controller, in which the controller is configured to cause (a) disposing a substrate on the substrate support, the substrate having an underlying film and a resist film on the underlying film, the resist film including a first region and a second region, (b) removing at least a part of the second region to expose at least a part of a side surface of the first region, (c) forming a deposited film on at least an upper surface of the first region, and (d) removing at least a part of the deposited film and at least a part of the second region.
In an exemplary embodiment, the chamber includes a gas supply port and a gas exhaust port, the substrate support includes a heater electrode configured to heat the substrate, and the controller is configured to cause in the (b), heating the substrate with the heater electrode and reacting a gas supplied into the chamber via the gas supply port with the second region to remove at least a part of the second region.
In an exemplary embodiment, the substrate processing apparatus further includes a plasma generator configured to form a plasma in the chamber, in which the controller is configured to cause in the (c), forming the deposited film by forming a first plasma from a first processing gas using the plasma generator, and in the (d), removing at least a part of the deposited film and the second region by forming a second plasma from a second processing gas different from the first processing gas using the plasma generator.
In an exemplary embodiment, the chamber includes a plasma supply port configured to supply a plasma formed outside the chamber into the chamber, and the controller is configured to cause in the (c), forming the deposited film with a first plasma supplied via the plasma supply port, and in the (d), removing at least a part of the deposited film and the second region with a second plasma supplied via the plasma supply port.
Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements will be given the same reference numerals, and repeated descriptions will be omitted. Unless otherwise specified, a positional relationship such as up, down, left, and right will be described based on a positional relationship illustrated in the drawings. A dimensional ratio in the drawings does not indicate an actual ratio, and the actual ratio is not limited to the ratio illustrated in the drawings.
The heating processing apparatus 100 has a processing chamber 102 that is configured to be sealable. The processing chamber 102 is, for example, an airtight cylindrical container, and is configured to be able to adjust the atmosphere inside. A side wall heater 104 is provided on a side wall of the processing chamber 102. A ceiling heater 130 is provided on a ceiling wall (top plate) of the processing chamber 102. A ceiling surface 140 of the ceiling wall (top plate) of the processing chamber 102 is formed as a horizontal flat surface, and a temperature thereof is adjusted by the ceiling heater 130.
A substrate support 121 is provided on a lower side in the processing chamber 102. The substrate support 121 has a substrate support surface on which the substrate W is supported. The substrate support 121 is formed, for example, in a circular shape in a plan view, and the substrate W is placed on a surface (upper surface) thereof that is formed horizontally. A stage heater 120 is embedded in the substrate support 121. The stage heater 120 is able to heat the substrate W placed on the substrate support 121. A ring assembly (not illustrated) may be disposed on the substrate support 121 to surround the substrate W. The ring assembly may include one or a plurality of annular members. By disposing the ring assembly around the substrate W, it is possible to improve the temperature controllability of an outer peripheral region of the substrate W. The ring assembly may be made of an inorganic material or an organic material depending on desired heating processing.
The substrate support 121 is supported in the processing chamber 102 by a support column 122 provided on a bottom surface of the processing chamber 102. A plurality of lifting and lowering pins 123 that is able to be lifted or lowered is provided on an outside of the support column 122 in a circumferential direction. Each of the plurality of lifting and lowering pins 123 is inserted into a through-hole provided in the substrate support 121. The plurality of lifting and lowering pins 123 is arranged at intervals in the circumferential direction. The lifting and lowering operation of the plurality of lifting and lowering pins 123 is provided by a lifting and lowering mechanism 124. When the lifting and lowering pin 123 protrudes from the surface of the substrate support 121, the substrate W is able to be delivered between a transport mechanism (not illustrated) and the substrate support 121.
An exhaust port 131 having an opening is provided in a side wall of the processing chamber 102. The exhaust port 131 is connected to an exhaust mechanism 132 via an exhaust pipe. The exhaust mechanism 132 is configured of a vacuum pump, a valve, and the like, and adjusts an exhaust flow rate from the exhaust port 131. A pressure in the processing chamber 102 is adjusted by adjusting the exhaust flow rate and the like by the exhaust mechanism 132. A transport port (not illustrated) of the substrate W is formed on the side wall of the processing chamber 102 to be openable and closable at a position different from a position at which the exhaust port 131 is opened.
In addition, a gas nozzle 141 is provided on the side wall of the processing chamber 102 at a position different from the positions of the exhaust port 131 and the transport port of the substrate W. The gas nozzle 141 supplies a processing gas into the processing chamber 102. The gas nozzle 141 is provided on a side opposite to the exhaust port 131 as viewed from a center portion of the substrate support 121 in the side wall of the processing chamber 102. That is, the gas nozzle 141 is provided to be symmetrical with respect to the exhaust port 131 on a vertical imaginary plane passing through the center portion of the substrate support 121 in the side wall of the processing chamber 102.
The gas nozzle 141 is formed in a rod shape that protrudes from the side wall of the processing chamber 102 toward the center side of the processing chamber 102. A distal end portion of the gas nozzle 141 extends, for example, horizontally from the side wall of the processing chamber 102. The processing gas is discharged into the processing chamber 102 from a discharge port that is open at the distal end of the gas nozzle 141, flows in a direction of a one-dot chain line arrow illustrated in
The gas nozzle 141 may be provided, for example, on the ceiling wall of the processing chamber 102. In addition, the exhaust port 131 may be provided on the bottom surface of the processing chamber 102.
The heating processing apparatus 100 includes a gas supply pipe 152 connected to the gas nozzle 141 from the outside of the processing chamber 102. A pipe heater 160 for heating the gas in the gas supply pipe 152 is provided around the gas supply pipe 152. The gas supply pipe 152 is connected to a gas supply 170. The gas supply 170 includes at least one gas source and at least one flow rate controller. The gas supply may include a vaporizer that vaporizes a material in a liquid state.
The controller 200 processes a computer-executable instruction that causes the heating processing apparatus 100 to execute various steps described in the present disclosure. The controller 200 may be configured to control each element of the heating processing apparatus 100 to execute the various steps described here. In an embodiment, a part or all of the controller 200 may be included in the heating processing apparatus 100. The controller 200 may include a processor 200a1, a storage unit 200a2, and a communication interface 200a3. The controller 200 is realized by, for example, a computer 200a. The processor 200a1 may be configured to read out a program from the storage unit 200a2 and execute the read out program to perform various control operations. This program may be stored in the storage unit 200a2 in advance, or may be acquired through a medium when necessary. The acquired program is stored in the storage unit 200a2 and is read out from the storage unit 200a2 and executed by the processor 200a1. The medium may be various storage media readable by the computer 200a, or may be a communication line connected to the communication interface 200a3. The processor 200a1 may be a central processing unit (CPU). The storage unit 200a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 200a3 may communicate with the heating processing apparatus 100 through a communication line such as a local area network (LAN).
The plasma generator 12 is configured to form a plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. Further, various types of plasma generators including an alternating current (AC) plasma generator and a direct current (DC) plasma generator may be used. In an embodiment, an AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 KHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In an embodiment, an RF signal has a frequency in the range of 100 KHz to 150 MHz. The plasma generator may have a configuration in which plasma formed outside the plasma processing chamber is supplied into the plasma processing chamber instead of the configuration in which the plasma is generated in the plasma processing space or in addition to the configuration in which the plasma is generated in the plasma processing space. With the above-described configuration, the plasma may be generated outside the plasma processing chamber, and the generated plasma may be supplied into the plasma processing space through a plasma supply port disposed in the plasma processing chamber.
The controller 2 processes a computer-executable instruction that causes the plasma processing apparatus 1 to execute various steps described in the present disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to execute the various steps described here. In an embodiment, a part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 is realized by, for example, a computer 2a. The controller 2 may include a processor 2a1, a storage unit 2a2, and a communication interface 2a3. Each configuration of the controller 2 may be the same as each configuration of the above-described controller 200 (see
Hereinafter, a configuration example of the capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described.
The capacitively coupled plasma processing apparatus 1 includes the plasma processing chamber 10, the gas supply 20, a power supply 30, and the exhaust system 40. In addition, the plasma processing apparatus 1 includes the substrate support 11 and a gas introducer. The gas introducer is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introducer includes a shower head 13. The substrate support 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support 11. In an embodiment, the shower head 13 configures at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, a side wall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support 11 are electrically insulated from a housing of the plasma processing chamber 10.
The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a center region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the center region 111a of the main body 111 in plan view. The substrate W is disposed on the center region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the center region 111a of the main body 111. Therefore, the center region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.
In an embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed in the ceramic member 1111a. The ceramic member 1111a has the center region 111a. In an embodiment, the ceramic member 1111a also has the annular region 111b. Another member that surrounds the electrostatic chuck 1111 may have the annular region 111b, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Further, at least one RF/DC electrode coupled to a RF power supply 31 and/or a DC power supply 32, which will be described later, may be disposed in the ceramic member 1111a. In this case, at least one RF/DC electrode functions as the lower electrode. When a bias RF signal and/or a DC signal, which will be described later, are supplied to at least one RF/DC electrode, the RF/DC electrode is also referred to as a bias electrode. The conductive member of the base 1110 and at least one RF/DC electrode may function as a plurality of lower electrodes. Further, the electrostatic electrode 1111b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.
The ring assembly 112 includes one or a plurality of annular members. In an embodiment, one or the plurality of annular members includes one or a plurality of edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.
In addition, the substrate support 11 may include a temperature-controlled module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature-controlled module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows in the flow passage 1110a. In an embodiment, the flow passage 1110a is formed in the base 1110, and one or a plurality of heaters is disposed in the ceramic member 1111a of the electrostatic chuck 1111. Further, the substrate support 11 may include a heat transfer gas supply configured to supply the heat transfer gas to a gap between a back surface of the substrate W and the center region 111a.
The shower head 13 is configured to introduce at least one processing gas from the gas supply 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. In addition, the shower head 13 includes at least one upper electrode. In addition to the shower head 13, the gas introducer may include one or a plurality of side gas injectors (SGI) attached to one or a plurality of opening portions formed on the side wall 10a.
The gas supply 20 may include at least one gas source 21 and at least one flow rate controller 22. In an embodiment, the gas supply 20 is configured to supply at least one processing gas to the shower head 13 from each corresponding gas source 21 through each corresponding flow rate controller 22. Each flow rate controller 22 may include, for example, a mass flow controller or a pressure-controlled flow rate controller. Further, the gas supply 20 may include at least one flow rate modulation device that modulates or pulses a flow rate of at least one processing gas.
The power supply 30 includes the RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and/or at least one upper electrode. As a result, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 may function as at least a part of the plasma generator 12. Further, by supplying the bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and an ion component in the formed plasma can be drawn into the substrate W.
In an embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In an embodiment, the source RF signal has a frequency in a range of 10 MHz to 150 MHz. In an embodiment, the first RF generator 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or plurality of source RF signals is supplied to at least one lower electrode and/or at least one upper electrode.
The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate the bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In an embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In an embodiment, the bias RF signal has a frequency in a range of 100 kHz to 60 MHz. In an embodiment, the second RF generator 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or plurality of bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.
In addition, the power supply 30 may include the DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In an embodiment, the first DC generator 32a is connected to at least one lower electrode, and is configured to generate the first DC signal. The generated first DC signal is applied to at least one lower electrode. In an embodiment, the second DC generator 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.
In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and/or at least one upper electrode. The voltage pulse may have a pulse waveform having a rectangular shape, a trapezoidal shape, a triangular shape, or a combination thereof. In an embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator configure the voltage pulse generator. When the second DC generator 32b and the waveform generator configure the voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or a plurality of positive voltage pulses and one or a plurality of negative voltage pulses in one cycle. The first and second DC generators 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.
The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at a bottom portion of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.
As illustrated in
A cup 321 is disposed outside the spin chuck 311, and the scattering of a processing liquid (a resist solution, a developer, a cleaning liquid, or the like) or a mist of the processing liquid to the periphery of the cup 321 is prevented. A waste liquid pipe 323 and an exhaust pipe 324 are provided at a bottom portion 322 of the cup 321. The waste liquid pipe 323 communicates with a waste liquid apparatus 325 such as a waste liquid pump. The exhaust pipe 324 communicates with an exhaust apparatus 327 such as an exhaust pump via a valve 326.
A blower apparatus 314 that supplies air having a required temperature and humidity to the inside of the cup 321 as downflow is provided above the processing chamber 310 of the liquid processing apparatus 300.
When forming a puddle of the processing liquid on the substrate W, a processing liquid supply nozzle 331 is used. The processing liquid supply nozzle 331 is provided on, for example, a nozzle support 332 such as an arm, and the nozzle support 332 is liftable and lowerable by a drive mechanism as illustrated by a reciprocating arrow A indicated by a broken line in the drawing, and is movable horizontally as illustrated by a reciprocating arrow B indicated by a broken line in the drawing. A processing liquid (resist solution, developer, or the like) is supplied from a processing liquid source 334 to the processing liquid supply nozzle 331 via a supply pipe 333.
In a case where a so-called long nozzle including a discharge port having a length equal to or greater than a diameter of the substrate W is used in forming the puddle, the puddle of the processing liquid is able to be formed on the substrate W by scanning the substrate W from one end portion to the other end portion. In addition, in a case of a so-called straight type nozzle that discharges a liquid to form a liquid column having a sufficiently small width compared to the diameter of the substrate W, the entire surface of the substrate W is able to be diffused with the processing liquid and a puddle of the processing liquid is able to be formed on the substrate W by positioning the discharge port above the center of the substrate W and discharging the processing liquid while rotating the substrate W. In addition, the formation of the puddle of the processing liquid may be performed by scanning the substrate W with a straight type nozzle in the same manner as the long nozzle, or by arranging a plurality of discharge ports that discharges a liquid, such as the straight type, on the substrate W and supplying the processing liquid from each of the discharge ports.
A gas nozzle 341 has a nozzle body 342. The nozzle body 342 is provided at the nozzle support such as an arm, and the nozzle support is liftable and lowerable by a drive mechanism as illustrated by a reciprocating arrow C indicated by a broken line, and is movable horizontally as illustrated by a reciprocating arrow D indicated by a broken line in the drawing.
The gas nozzle 341 has two nozzle discharge ports 343 and 344. The nozzle discharge ports 343 and 344 are formed by being branched from a gas flow passage 345. The gas flow passage 345 communicates with a gas source 347 via a gas supply pipe 346. As the inert gas or the non-oxidizing gas, for example, nitrogen gas is prepared in the gas source 347. For example, when nitrogen gas is supplied from the gas flow passage 345 to the gas nozzle 341, the nitrogen gas is discharged from the respective nozzle discharge ports 343 and 344.
In addition, the gas nozzle 341 is provided with a cleaning liquid supply nozzle 351 for cleaning the processing liquid after the liquid processing from the substrate W. The cleaning liquid supply nozzle 351 communicates with a cleaning liquid source 353 via a cleaning liquid supply pipe 352. As the cleaning liquid, for example, pure water is used. The cleaning liquid supply nozzle 351 is positioned between the two nozzle discharge ports 343 and 344 described above, but the position thereof is not limited thereto. The cleaning liquid supply nozzle 351 may be configured independently of the gas nozzle 341.
The controller 400 processes a computer-executable instruction that causes the liquid processing apparatus 300 to execute various steps described in the present disclosure. The controller 400 may be configured to control each element of the liquid processing apparatus 300 to execute the various steps described here. In an embodiment, a part or all of the controller 400 may be included in the liquid processing apparatus 300. The controller 400 is realized by, for example, a computer 400a. The computer 400a may include a processor 400a1, a storage unit 400a2, and a communication interface 400a3. Each configuration of the controller 400 may be the same as each configuration of the controller 200 (see
The present processing method may be executed by using any one of the above-described substrate processing systems (see
First, in step ST11, the substrate W is provided in the processing chamber 102 of the heating processing apparatus 100. The substrate W is provided on the substrate support 121 via the lifting and lowering pin 123. After the substrate W is disposed on the substrate support 121, the temperature of the substrate support 121 is adjusted to a set temperature. The temperature adjustment of the substrate support 121 may be performed by controlling an output of one or more heaters of the side wall heater 104, the stage heater 120, the ceiling heater 130, and the pipe heater 160 (hereinafter, also referred to as “each heater”). In the present processing method, the temperature of the substrate support 121 may be adjusted to the set temperature before the step ST11. That is, the substrate W may be provided on the substrate support 121 after the temperature of the substrate support 121 is adjusted to the set temperature.
The resist film RM may be a metal-containing resist film containing a metal. The metal may include at least one metal selected from the group consisting of Sn, Hf, and Ti, as an example. In an example, the resist film RM may contain Sn, and may contain tin oxide (SnO) and tin hydroxide (Sn—OH bond). The resist film RM may further contain an organic substance.
As illustrated in
The underlying film UF may be a film that is etched using the resist film RM as a mask. The underlying film UF may be an organic film, a dielectric film, a metal film, or a semiconductor film, or a film stack thereof formed on a silicon wafer. In an embodiment, the underlying film UF includes, for example, at least one selected from the group consisting of a silicon-containing film, a carbon-containing film, and a metal-containing film.
The first film UF1 is, for example, a spin-on glass (SOG) film, a SiC film, a SiON film, a Si-containing antireflection film (SiARC), or an organic film. The second film UF2 is, for example, a spin-on carbon (SOC) film, an amorphous carbon film, or a silicon-containing film. The third film UF3 is, for example, a silicon-containing film. The silicon-containing film is, for example, a silicon oxide film, a silicon nitride film, a silicon acid nitride film, a silicon carbon nitride film, a polycrystalline silicon film, or a carbon-containing silicon film. The third film UF3 may be configured of a plurality of stacked silicon-containing films. For example, the third film UF3 may be configured of a silicon oxide film and a silicon nitride film which are alternately stacked. In addition, the third film UF3 may be configured of a silicon oxide film and a polycrystalline silicon film which are alternately stacked. In addition, the third film UF3 may be a film stack including a silicon nitride film, a silicon oxide film, and a polycrystalline silicon film. In addition, the third film UF3 may be configured of a stacked silicon oxide film and silicon carbon nitride film. In addition, the third film UF3 may be a film stack including a silicon oxide film, a silicon nitride film, and a silicon carbon nitride film.
In an embodiment, the substrate W is formed as follows. First, a photoresist film containing a metal is formed on an underlying film which is subjected to an adhesiveness improvement processing or the like. The film formation may be carried out by a dry process, may be carried out by a wet process such as a solution coating method, or may be carried out by both the dry process and the wet process. Surface reforming processing may be performed on the underlying film before the film formation of the photoresist film. The substrate after the film formation of the photoresist film is subjected to a heating processing, that is, a post apply bake (PAB). The post apply baked substrate may be subjected to additional heating processing. The wafer after the heating processing is transported to an exposure apparatus, and the photoresist film is irradiated with EUV light through an exposure mask (reticle). As a result, the substrate W including the underlying film UF and the resist film RM having the exposed first region RM1 and the unexposed second region RM2 is formed. The first region RM1 is a region corresponding to an opening provided in the exposure mask (reticle). The second region RM2 is a region corresponding to a pattern provided on the exposure mask (reticle). The EUV light has, for example, a wavelength in a range of 10 to 20 nm. The EUV light may have a wavelength in a range of 11 to 14 nm, and has a wavelength of 13.5 nm in an example. The substrate W after the exposure is transported from the exposure apparatus to the heating processing apparatus under atmosphere control, and is subjected to a heating processing, that is, a post-exposure bake (PEB). The substrate W after the PEB may be subjected to additional heating processing.
Next, in step ST12, a part of the second region RM2 is removed.
In the step ST12, first, the first processing gas is supplied into the processing chamber 102 via the gas nozzle 141.
In an embodiment, the first processing gas includes a halogen-containing gas. The halogen-containing gas may be a gas containing a halogen-containing inorganic acid, and may be a gas of an inorganic acid containing Br or Cl. The gas containing the halogen-containing inorganic acid may be a gas containing a hydrogen halide and/or a boron halide. The gas containing the halogen-containing inorganic acid may be, for example, at least one selected from the group consisting of an HBr gas, a BCl3 gas, HCl, and HF. In an embodiment, the first processing gas may be a gas containing an organic acid. The gas containing an organic acid may be, for example, a gas containing at least one selected from the group consisting of a carboxylic acid, a β-dicarbonyl compound, and an alcohol. In an embodiment, the first processing gas includes a carboxylic acid. The carboxylic acid may be, for example, formic acid (HCOOH), acetic acid (CH3COOH), trichloroacetic acid (CCl3COOH), monofluoroacetic acid (CFH2COOH), difluoroacetic acid (CF2FCOOH), trifluoroacetic acid (CF3COOH), chloro-difluoroacetic acid (CClF2COOH), sulfur-containing acetic acid, thioacetic acid (CH3COSH), thioglycolic acid (H SCH2COOH), trifluoroacetic acid anhydride ((CF3CO)2O), or acetic acid anhydride ((CH3CO)2O). In an embodiment, the first processing gas includes a β-dicarbonyl compound. The β-dicarbonyl compound may be, for example, acetylacetone (CH3C(OCH2C(O)CH3), trichloroacetylacetone (CCl3C(O)CH2C(O)CH3), hexachloroacetylacetone (CCl3C(O)CH2C(O)CCl3), trifluoroacetylacetone (CF3C(O)CH2C(O)CH3), or hexafluoroacetylacetone (HFAc, CF3C(O)CH2C(O)CF3). In an embodiment, the first processing gas includes an alcohol. The alcohol may be, for example, nonafluoro-tert-butyl alcohol ((CF3)3COH).
In an embodiment, the first processing gas includes trifluoroacetic acid. In an embodiment, the first processing gas includes halogenated organic acid vapor. The first processing gas includes, for example, at least one selected from the group consisting of trifluoroacetic acid anhydride, acetic acid anhydride, trichloroacetic acid, CFH2COOH, CF2HCOOH, chloro-difluoroacetic acid, sulfur-containing acetic acid, thioacetic acid, and thioglycolic acid. In an embodiment, the first processing gas is a mixture of a carboxylic acid and a hydrogen halide or a mixed gas of acetic acid and formic acid. In an embodiment, the first processing gas includes acetic acid.
In the step ST12, the second region RM2 is removed at the first selectivity with respect to the first region RM1. In the present processing method, the “selectivity” is also referred to as a development contrast, and is a ratio of the development speed of the second region RM2 to the development speed of the first region RM1. The first selectivity may be appropriately set to a range (that is, a value greater than 1) in which the second region RM2 is selectively removed with respect to the first region RM1. The first selectivity may be set to be relatively low to the extent that a part of the first region RM1 is removed. In this case, even in a case where there is a portion other than the first region RM1 (portion corresponding to the opening of the exposure mask) that has been exposed to EUV, the resist film of the portion is able to be removed, and the portion remaining as a residue is able to be suppressed.
The step ST12 may be executed until the second region RM2 is removed to a given depth or until the opening formed by the development has a given aspect ratio. The given depth or aspect ratio may be set based on the degree of progress of the exposure reaction of the first region RM1. In an embodiment, the step ST12 may be executed until the depth of the side surface SS1 of the first region RM1 reaches the given depth.
Next, in the step ST13, a deposited film DF is formed. The deposited film DF may be a carbon-containing film and/or a silicon-containing film. The deposited film DF may be formed by a chemical vapor deposition method (hereinafter, also referred to as a “CVD method”), or may be formed by a plasma formed from the second processing gas including a carbon-containing gas and/or a silicon-containing gas. In one example, first, the second processing gas is supplied into the plasma processing space 10s from the gas supply 20. Next, a source RF signal is supplied to the upper electrode or the lower electrode. As a result, an RF electric field is generated in the plasma processing space 10s, and plasma is generated from the second processing gas. Then, a radical containing carbon in the plasma is deposited on at least a part of the resist film RM.
In a case where the carbon-containing film is formed as the deposited film DF, the second processing gas may include a gas containing carbon and hydrogen. The second processing gas may include, for example, a hydrocarbon (CxHy: x and y are positive integers, also referred to as a CH-based gas), and in one example, may include a CH4 gas, a C2H2 gas, a C2H4 gas, or a C3H6 gas. The second processing gas may include a fluorocarbon (CxFz: x and z are positive integers, also referred to as a CF-based gas), and in one example, may include C4F6 or C4F8. In addition, the second processing gas may also include, for example, a hydrofluorocarbon (CxHyFz: X, y, and z are positive integers. Also referred to as a CHF-based gas), and in one example, may include a CH2F2 gas or a CH3F gas. The second processing gas may further include an inert gas such as noble gas or N2 gas.
In a case where the silicon-containing film is formed as the deposited film DF, the second processing gas may include, for example, a silicon-containing gas such as SiCl4 gas or SiF4 gas, and may also include a mixed gas of these silicon-containing gases and an oxidizing gas or a hydrogen-containing gas. The oxidizing gas may be, for example, at least one selected from the group consisting of an O2 gas, a CO gas, and a CO2 gas. The hydrogen-containing gas may be, for example, H2 gas.
The deposited film DF may be formed by an atomic layer deposition method (hereinafter, also referred to as an “ALD method”), a molecular layer deposition method (hereinafter, also referred to as an “MLD method”), or a physical vapor deposition method (hereinafter, also referred to as a “PVD method”), in addition to the CVD method. For example, in a case of forming the silicon-containing film as the deposited film DF, the silicon-containing gas described above may be supplied as a precursor to form a precursor layer on the upper surface TS1 of the first region RM1, and then the oxidizing gas or the hydrogen-containing gas may be supplied to react with the precursor layer.
In an embodiment, as the deposited film DF, the silicon-containing film may be formed, and then the carbon-containing film may be formed. In this case, the step ST14 described later may be simultaneously executed as the formation of the carbon-containing film. In addition, in an embodiment, as the deposited film DF, the carbon-containing film may be formed and then the silicon-containing film may be formed. In this case, the step ST14 described later may be simultaneously executed as the formation of the silicon-containing film. In step ST13, a bias signal may not be supplied to the lower electrode of the substrate support 11.
As described above, in a case where scum is generated in the step ST12, the descumming step (step ST14) may be executed to remove the scum. As illustrated in
In the step ST14, the third processing gas may include at least one selected from the group consisting of a helium-containing gas, a hydrogen-containing gas, a bromine-containing gas, and a chlorine-containing gas. In an example, the third processing gas may include at least one selected from the group consisting of a helium gas, a hydrogen gas, a hydrogen bromide gas, and a boron trichloride gas. The third processing gas may further include a noble gas such as Ar gas or an inert gas such as N2 gas.
In the step ST14, a part of the deposited film DF may be removed together with the scums S1 to S3. In addition, in the step ST14, a remaining part or all of the second region RM2 may be removed together with the scums S1 to S3. That is, the step ST14 and a step ST15 described later may be simultaneously executed.
Next, in the step ST15, the second region RM2 is further removed. In the step ST15, the second region RM2 may be removed by the plasma formed from the fourth processing gas. In one example, first, the fourth processing gas is supplied into the plasma processing space 10s from the gas supply 20. Next, a source RF signal is supplied to the upper electrode or the lower electrode. As a result, an RF electric field is generated in the plasma processing space 10s, and the plasma is generated from the fourth processing gas. In this case, the bias signal may be supplied to the lower electrode of the substrate support 11. Then, the second region RM2 is removed by the radicals included in the plasma formed from the fourth processing gas.
In addition, in step ST15, as illustrated in
In the step ST15, the fourth processing gas may be at least one selected from the gases listed as the first processing gas described above, and may be the same gas as the first processing gas. The fourth processing gas may be at least one selected from the gases listed as the third processing gas described above, and may be the same gas as the third processing gas. The step ST45 can also be executed by the heating processing apparatus 100 without generating the plasma. In this case, the fourth processing gas may be supplied into the processing chamber 102, the pressure in the processing chamber may be controlled to a predetermined pressure, and the temperature of the substrate W or the substrate support 121 may be adjusted to a predetermined temperature.
After a part of the second region RM2 is removed in the step ST12, the step ST13, the step ST14, and the step ST15 may be executed at the same time. That is, after the execution of the step ST12, the second processing gas, the third processing gas, and the fourth processing gas are supplied into the plasma processing space 10s from the gas supply 20. Next, a source RF signal is supplied to the upper electrode or the lower electrode. As a result, the RF electric field is generated in the plasma processing space 10s, and plasma is generated from the second processing gas, the third processing gas, and the fourth processing gas. In this case, the bias signal may be supplied to the lower electrode of the substrate support 11. Then, the deposited film DF is formed on the first region RM1 by the plasma formed from the second processing gas. On the other hand, the scums S1 to S3 and the second region RM2 are removed by the plasma generated from the third processing gas and the fourth processing gas. That is, the scums S1 to S3 and the second region RM2 can be removed while the first region RM1 is protected by the deposited film DF. As a result, the second region RM2 can be removed while appropriately controlling the dimension of the first region RM1.
In addition, after a part of the second region RM2 is removed in the step ST12, the step ST13 and the step ST15 may be executed at the same time. That is, after the execution of the step ST12, the second processing gas and the fourth processing gas are supplied into the plasma processing space 10s from the gas supply 20. Next, a source RF signal is supplied to the upper electrode or the lower electrode. As a result, the RF electric field is generated in the plasma processing space 10s, and the plasma is generated from the second processing gas and the fourth processing gas. In this case, the bias signal may be supplied to the lower electrode of the substrate support 11. The deposited film DF is formed on the first region RM1 by the plasma formed from the second processing gas. On the other hand, the second region RM2 and the scums S1 to S3 on the second region RM2 are removed by the plasma formed from the fourth processing gas. As a result, the second region RM2 can be removed while appropriately controlling the dimension of the first region RM1.
Next, in the step ST16, the underlying film UF is etched. The underlying film UF is etched using the first region RM1 as a mask. First, the third processing gas is supplied from the gas supply 20 to the plasma processing space 10s. Next, the source RF signal is supplied to the upper electrode or the lower electrode, and the plasma is generated from the fourth processing gas. In addition, the bias signal is supplied to the lower electrode of the substrate support 11, and a bias potential is generated between the plasma and the substrate W. Therefore, active species such as ions and radicals in the plasma are attracted to the substrate W, and the underlying film UF is etched by the active species. The fourth processing gas may be appropriately selected depending on the material constituting the underlying film UF and/or the first region RM1.
In the present processing method, at the time of development of the resist film RM, after a part of the second region RM2 is developed (dry development or wet development), the deposited film DF is formed on the upper surface TS1 of the first region RM1. As a result, when removing the remaining part of the second region RM2, the first region RM1 can be appropriately protected by the deposited film DF.
In the present processing method, since the deposited film DF is formed on the first region RM1 and then the second region RM2 is removed, it is possible to reduce the surface roughness due to the unevenness or the like of the side surface SS1 of the first region RM1 and the side surface of the deposited film DF. In addition, since a part of the second region RM2 is developed (dry development or wet development) and then the remaining part of the second region RM2 is removed, it is possible to suppress the occurrence of scum of the resist film RM or the like at a bottom portion of the opening OP. That is, in the present processing method, defects of the pattern included in the first region RM1 can be reduced.
In the present processing method, since the underlying film UF is etched using the first region RM1 in which the defects are reduced as the mask, the dimensions and the shape of the concave portion RC formed in the underlying film UF can be appropriately controlled.
The embodiments of the present disclosure may be modified in various ways without departing from the scope and gist of the present disclosure. For example, the embodiment of the present disclosure may include an aspect illustrated in
In addition, in the embodiment illustrated in
Further, in the embodiments illustrated in
The first carrier station CS1 performs the carrying-in and carrying-out of the first carrier C1 between the first carrier station CS1 and an external system of the substrate processing system SS. The first carrier station CS1 has a stage including a plurality of first placing plates ST1. The first carrier C1 in a state where a plurality of substrates W are accommodated or in a state where the first carrier C1 is empty is placed on each first placing plate ST1. The first carrier C1 has a housing capable of accommodating the plurality of substrates W inside. In an example, the first carrier C1 is a front opening unified pod (FOUP).
In addition, the first carrier station CS1 transports the substrate W between the first carrier C1 and the first processing station PS1. The first carrier station CS1 further includes a first transport apparatus HD1. The first transport apparatus HD1 is provided at the first carrier station CS1 to be positioned between the stage and the first processing station PS1. The first transport apparatus HD1 transports and delivers the substrate W between the first carrier C1 on each first placing plate ST1 and the second transport apparatus HD2 of the first processing station PS1. The substrate processing system SS may further include a load lock module. The load lock module may be provided between the first carrier station CS1 and the first processing station PS1. The load lock module is able to switch the pressure inside thereof to atmospheric pressure or vacuum. The “atmospheric pressure” can be a pressure inside the first transport apparatus HD1. In addition, the “vacuum” is a pressure lower than the atmospheric pressure, and may be, for example, a medium vacuum of 0.1 Pa to 100 Pa. The inside of the second transport apparatus HD2 may be atmospheric pressure or vacuum. The load lock module may transport, for example, the substrate W from the first transport apparatus HD1, which is atmospheric pressure, to the second transport apparatus HD2, which is vacuum, and may transport the substrate W from the second transport apparatus HD2, which is vacuum, to the first transport apparatus HD1, which is atmospheric pressure.
The first processing station PS1 performs various types of processing on the substrate W. In an embodiment, the first processing station PS1 includes a preprocessing module PM1, a resist film forming module PM2, and a first heating processing module PM3 (hereinafter, also collectively referred to as a “first substrate processing module PMa”). In addition, the first processing station PS1 has a second transport apparatus HD2 that transports the substrate W. The second transport apparatus HD2 transports and delivers the substrate W between two designated first substrate processing modules PMa and between the first processing station PS1 and the first carrier station CS1 or the first interface station IS1.
In the preprocessing module PM1, the substrate W is subjected to the preprocessing. In an embodiment, the preprocessing module PM1 includes a temperature-controlled unit that adjusts the temperature of the substrate W, a high-precision temperature-controlled unit that adjusts the temperature of the substrate W with high precision, and the like. In an embodiment, the preprocessing module PM1 includes a surface reforming processor that performs surface reforming processing on the substrate W. Each processor of the preprocessing module PM1 may be configured to include the heating processing apparatus 100 (see
In the resist film forming module PM2, the resist film is formed on the substrate W. In an embodiment, the resist film forming module PM2 includes a dry coating unit. The dry coating unit forms the resist film on the substrate W using a dry process such as a vapor deposition method. The dry coating unit includes, for example, a CVD apparatus or ALD apparatus that performs chemical vapor deposition on the resist film, or a PVD apparatus that performs physical vapor deposition on the resist film on the substrate W disposed in the chamber. The dry coating unit may be the heating processing apparatus 100 (see
In an embodiment, the resist film forming module PM2 includes a wet coating unit. The wet coating unit forms the resist film on the substrate W using a wet process such as a liquid phase deposition method. The wet coating unit may be, for example, the liquid processing apparatus 300 (see
In an embodiment, the example of the resist film forming module PM2 includes both the wet coating unit and the dry coating unit.
In the first heating processing module PM3, the substrate W is subjected to the heating processing. In an embodiment, the first heating processing module PM3 includes one or more of a pre-baking (PAB) unit that performs the heating processing on the substrate W on which the resist film is formed, a temperature-controlled unit that adjusts the temperature of the substrate W, and a high-precision temperature-controlled unit that adjusts the temperature of the substrate W with high precision. Each of these units may have one or a plurality of heating processing apparatuses, respectively. In one example, the plurality of heating processing apparatuses may be stacked. The heating processing apparatus may be, for example, the heating processing apparatus 100 (see
The first interface station IS1 includes a third transport apparatus HD3. The third transport apparatus HD3 transports and delivers the substrate W between the first processing station PS1 and the exposure apparatus EX. The third transport apparatus HD3 may be configured to have a housing that accommodates the substrate W, and a temperature, humidity, pressure, and the like in the housing are controllable.
In the exposure apparatus EX, the resist film on the substrate W is exposed using an exposure mask (reticle). The exposure apparatus EX may be, for example, an EUV exposure apparatus having a light source that generates EUV light.
The second interface station IS2 includes a fourth transport apparatus HD4. The fourth transport apparatus HD4 transports or delivers the substrate W between the exposure apparatus EX and the second processing station PS2. The fourth transport apparatus HD4 may be configured to have a housing that accommodates the substrate W, and the temperature, humidity, pressure, and the like in the housing may be controllable.
The second processing station PS2 performs various types of processing on the substrate W. In an embodiment, the second processing station PS2 includes a second heating processing module PM4, a measurement module PM5, a developing module PM6, and a third heating processing module PM7 (hereinafter, also collectively referred to as a “second substrate processing module PMb”). In addition, the second processing station PS2 has a fifth transport apparatus HD5 that transports the substrate W. The fifth transport apparatus HD5 transports and delivers the substrate W between the two designated second substrate processing modules PMb and between the second processing station PS2 and the second carrier station CS2 or the second interface station IS2.
In the second heating processing module PM4, the substrate W is subjected to the heating processing. In an embodiment, the heating processing module PM4 includes any one or more of a post-exposure baking (PEB) unit that performs the heating processing on the substrate W after exposure, a temperature-controlled unit that adjusts the temperature of the substrate W, and a high-precision temperature-controlled unit that adjusts the temperature of the substrate W with high precision. Each of these units may have one or a plurality of heating processing apparatuses, respectively. In one example, the plurality of heating processing apparatuses may be stacked. The heating processing apparatus may be, for example, the heating processing apparatus 100 (see
In the measurement module PM5, various measurements are performed on the substrate W. In an embodiment, the measurement module PM5 includes an imaging unit including a stage on which the substrate W is placed, an imaging apparatus, an illumination apparatus, and various sensors (a temperature sensor, a reflectivity measuring sensor, and the like). The imaging apparatus may be, for example, a CCD camera that images the appearance of the substrate W. Alternatively, the imaging apparatus may be a hyperspectral camera that images light by spectrally separating the light for each wavelength. The hyperspectral camera may measure any one or more of a pattern shape, a dimension, a film thickness, a composition, and a film density of the resist film.
In the developing module PM6, the substrate W is subjected to development processing. In an embodiment, the developing module PM6 includes a dry development unit that performs dry development on the substrate W. The dry development unit may be, for example, the heating processing apparatus 100 (see
In the third heating processing module PM7, the substrate W is subjected to the heating processing. In an embodiment, the third heating processing module PM7 includes any one or more of a post-baking (PB) unit that performs heating processing on the substrate W after development, a temperature-controlled unit that adjusts the temperature of the substrate W, and a high-precision temperature-controlled unit that adjusts the temperature of the substrate W with high precision. Each of these units may have one or a plurality of heating processing apparatuses, respectively. In one example, the plurality of heating processing apparatuses may be stacked. The heating processing apparatus may be, for example, the heating processing apparatus 100 (see
The second carrier station CS2 performs carrying-in and carrying-out of the second carrier C2 between the second carrier station CS2 and an external system of the substrate processing system SS. The configuration and the function of the second carrier station CS2 may be the same as those of the first carrier station CS1 described above.
The controller CT controls each configuration of the substrate processing system SS to execute given processing on the substrate W. The controller CT stores a recipe in which a process procedure, a process condition, a transport condition, and the like are set, and controls each configuration of the substrate processing system SS to execute given processing on the substrate W according to the recipe. The controller CT may serve as some or all of the functions of each controller (the controller 200 and the controller 2 illustrated in
The method MT may be executed by using the substrate processing system SS illustrated in
First, the first carrier C1 accommodating the plurality of substrates W is carried into the first carrier station CS1 of the substrate processing system SS. The first carrier C1 is placed on the first placing plate ST1. Next, each substrate W in the first carrier C1 is sequentially taken out by the first transport apparatus HD1 and delivered to the second transport apparatus HD2 of the first processing station PS1. The substrate W is transported to the preprocessing module PM1 by the second transport apparatus HD2. The preprocessing module PM1 performs the preprocessing on the substrate W. The preprocessing may include, for example, one or more of temperature adjustment of the substrate W, formation of a part or all of the underlying film of the substrate W, heating processing of the substrate W, and high-precision temperature adjustment of the substrate W. The preprocessing may include a surface reforming processing of the substrate W.
Next, the substrate W is transported to the resist film forming module PM2 by the second transport apparatus HD2. The resist film is formed on the substrate W by the resist film forming module PM2. In an embodiment, the resist film is formed by a wet process such as a liquid phase deposition method. For example, the resist film is formed by spin-coating the resist film on the substrate W using the wet coating unit of the resist film forming module PM2. In an embodiment, the resist film is formed on the substrate W by a dry process such as a vapor deposition method. For example, the resist film is formed by vapor-depositing the resist film on the substrate W using the dry coating unit of the resist film forming module PM2.
The resist film may be formed on the substrate W by using both the dry process and the wet process. For example, the second resist film may be formed on the first resist film by the wet process after the first resist film is formed on the substrate W by the dry process. In this case, the film thicknesses, materials, and/or compositions of the first resist film and the second resist film may be the same as or different from each other.
Next, the substrate W is transported to the first heating processing module PM3 by the second transport apparatus HD2. The substrate W is subjected to the heating processing (pre-baking: PAB) by the first heating processing module PM3. The pre-baking may be performed in an air atmosphere or an inert atmosphere. In addition, the pre-baking may be performed by heating the substrate W to 50° C. or higher or 80° C. or higher. The heating temperature of the substrate W may be 250° C. or lower, 200° C. or lower, or 150° C. or lower. In one example, the heating temperature of the substrate may be 50° C. or higher and 250° C. or lower. In a case where the resist film is formed by the dry process in the step ST200, in an embodiment, the pre-baking may be continuously executed by the dry coating unit that has executed the step ST200. In an embodiment, after the pre-baking, removing processing of the resist film at the end portion of the substrate W (edge bead removal: EBR) may be performed.
Next, the substrate W is delivered to the third transport apparatus HD3 of the first interface station IS1 by the second transport apparatus HD2. Then, the substrate W is transported to the exposure apparatus EX by the third transport apparatus HD3. The substrate W is subjected to EUV exposure in the exposure apparatus EX through the exposure mask (reticle). As a result, on the substrate W, a first region where EUV exposure is performed and a second region where EUV exposure is not performed are formed corresponding to the pattern of the exposure mask (reticle).
Next, the substrate W is delivered from the fourth transport apparatus HD4 of the second interface station IS2 to the fifth transport apparatus HD5 of the second processing station PS2. Then, the substrate W is transported to the second heating processing module PM4 by the fifth transport apparatus HD5. Then, the substrate W is subjected to the heating processing (post-exposure baking: PEB) in the second heating processing module PM4. The post-exposure baking may be performed in the air atmosphere. In addition, the post-exposure baking may be performed by heating the substrate W to 180° C. or higher and 250° C. or lower.
Next, the substrate W is transported to the measurement module PM5 by the fifth transport apparatus HD5. The measurement module PM5 measures the substrate W. The measurement may be an optical measurement or other measurements. In an embodiment, the measurement by the measurement module PM5 includes measurement of the appearance and/or dimensions of the substrate W using a CCD camera. In an embodiment, the measurement by the measurement module PM5 includes the measurement of any one or more of a pattern shape, a dimension, a film thickness, a composition, or a film density of a resist film using a hyperspectral camera (hereinafter, also referred to as “pattern shape and the like”).
In an embodiment, the controller CT determines the presence or absence of the exposure abnormality of the substrate W based on the measured appearance, dimensions, and/or pattern shape, and the like of the substrate W. In an embodiment, in a case where the controller CT determines that there is an exposure abnormality, the substrate W may be reworked or discarded without performing the development in step ST700. The rework of the substrate W may be performed by removing the resist on the substrate W and returning to the step ST200 to form the resist film again. The rework after development may cause damage to the substrate W, but damage to the substrate W may be avoided or suppressed by performing the rework before development.
Next, the substrate W is transported to the developing module PM6 by the fifth transport apparatus HD5. In the developing module PM6, the resist film of the substrate W is developed. The development processing may be performed by the dry development or the wet development. The development processing may be performed by combining the dry development and the wet development. The development processing in the step ST700 may be performed by the first method (see
Next, the substrate W is transported to the third heating processing module PM7 by the fifth transport apparatus HD5 and is subjected to the heating processing (post-baking). The post-baking may be performed in an air atmosphere or a reduced pressure atmosphere containing N2 or O2. In addition, the post-baking may be performed by heating the substrate W to 150° C. or higher and 250° C. or lower. The post-baking may be performed by the second heating processing module PM4 instead of the third heating processing module PM7. In an embodiment, the optical measurement of the substrate W may be performed by the measurement module PM5 after the post-baking. Such measurement may be executed in addition to the measurement in the step ST600 or instead of the measurement in the step ST600. In an embodiment, the controller CT determines the presence or absence of an abnormality such as a defect, a scratch, or an adhesion of a foreign substance in the development pattern of the substrate W based on the measured appearance and dimensions of the substrate W and/or the pattern shape, and the like. In an embodiment, in a case where the controller CT determines that an abnormality has occurred, the substrate W may be reworked or discarded without performing the etching in step ST900. In an embodiment, in a case where the controller CT determines that an abnormality is present, the opening dimensions of the resist film of the substrate W may be adjusted by using the dry coating unit (CVD apparatus, ALD apparatus, or the like).
After the execution of the step ST800, the substrate W is delivered to the sixth transport apparatus HD6 of the second carrier station CS2 by the fifth transport apparatus HD5, and is transported to the second carrier C2 of the second placing plate ST2 by the sixth transport apparatus HD6. Thereafter, the second carrier C2 is transported to a plasma processing system (not illustrated). In the plasma processing system, the underlying film UF of the substrate W is etched using the resist film after development as a mask. As described above, the method MT ends. In a case where the resist film is developed using a plasma processing apparatus in step ST700, the etching may be continuously executed in the plasma processing chamber of the plasma processing apparatus. In addition, in a case where the second processing station PS2 includes a plasma processing module in addition to the developing module PM6, the etching may be executed in the plasma processing module. The above-described desorption processing may be executed once or more before or during the etching.
According to an exemplary embodiment of the present disclosure, it is possible to provide a technique for adjusting a shape of a development pattern.
The embodiments of the present disclosure further include the following aspects.
A substrate processing method including:
The substrate processing method according to Addendum 1, in which the resist film is a photoresist film, the first region is a portion exposed in the resist film, and the second region is a portion not exposed in the resist film.
The substrate processing method according to Addendum 2, in which the resist film is a metal-containing film.
The substrate processing method according to Addendum 2 or 3, in which the metal-containing film includes at least one selected from the group consisting of Sn, Hf, and Ti.
The substrate processing method according to Addendum 3 or 4, in which the metal-containing film is an EUV resist film.
The substrate processing method according to any one of Addendums 1 to 5, in which in the (b), a part of the second region is removed by using a first processing gas including at least one of a halogen-containing inorganic acid and a carboxylic acid.
The substrate processing method according to any one of Addendums 1 to 6, in which in the (c), the deposited film is formed by plasma formed from a second processing gas including at least one of a carbon-containing gas and a silicon-containing gas.
The substrate processing method according to Addendum 7, in which the second processing gas includes at least one selected from the group consisting of a CxHy gas, a CxFz gas, and a CxHyFz gas (x, y, and z are positive integers)
The substrate processing method according to Addendum 7 or 8, in which the second processing gas includes at least one selected from the group consisting of SiCl4 and SiF4.
The substrate processing method according to any one of Addendums 1 to 9, in which in the (d), the second region is removed by a plasma formed from a third processing gas.
The substrate processing method according to Addendum 10, in which the third processing gas includes a gas containing at least one selected from the group consisting of a helium atom, a hydrogen atom, a bromine atom, and a chlorine atom.
The substrate processing method according to Addendum 1, in which the (c) and the (d) are simultaneously executed.
The substrate processing method according to Addendum 12, in which
The substrate processing method according to Addendum 13, in which the deposited film is formed by the plasma formed from the second processing gas, and the second region of the resist film is removed by the plasma formed from the third processing gas.
The substrate processing method according to Addendum 13, in which at least a part of the deposited film formed by the plasma formed from the second processing gas is removed by the plasma formed from the third processing gas.
The substrate processing method according to any one of Addendums 1 to 15, in which
The substrate processing method according to Addendum 16, in which the (c) and the (d1) are simultaneously executed.
The substrate processing method according to Addendum 16 or 17, in which a cycle including the (c) and the (d1) is repeated a plurality of times.
The substrate processing method according to any one of Addendums 16 to 18, in which a cycle including the (b), the (c), and the (d1) is repeated a plurality of times.
The substrate processing method according to any one of Addendums 1 to 19, in which
The substrate processing method according to any one of Addendums 1 to 20, further including:
The substrate processing method according to Addendum 21, in which the (d) and the (e) are executed in the same chamber.
The substrate processing method according to Addendum 21, in which the (d) and the (e) are executed in different chambers.
A substrate processing apparatus including:
The substrate processing apparatus according to Addendum 24, in which
The substrate processing apparatus according to Addendum 24, further including:
The substrate processing apparatus according to Addendum 24, in which
Each of the above embodiments is described for the purpose of description, and is not intended to limit the scope of the present disclosure. Each of the above embodiments may be modified in various ways without departing from the scope and purpose of the present disclosure. For example, some configuration elements in one embodiment are able to be added to other embodiments. In addition, some configuration elements in one embodiment are able to be replaced with corresponding configuration elements in another embodiment.
The present application is continuation of International Application No. PCT/JP2023/027682, filed on Jul. 28, 2023 which claims benefit of priority from U.S. Provisional Application No. 63/393,638 filed on Jul. 29, 2022, the entire contents of each are incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| 63393638 | Jul 2022 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2023/027682 | Jul 2023 | WO |
| Child | 19037381 | US |
