Udo Schwalke

Person

Heldenstein, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit arrangement and method for the manufacture thereof
- Patent number 6,913,983
- Issue date Jul 5, 2005
- Infineon Technologies AG
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFETs with improved short channel effects and method of making th...
- Patent number 6,380,015
- Issue date Apr 30, 2002
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure for a MOS transistor
- Patent number 6,239,478
- Issue date May 29, 2001
- Infineon Technologies AG
- Martin Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an integrated circuit arrangement
- Patent number 6,057,211
- Issue date May 2, 2000
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing an integrated circuit device with at least on...
- Patent number 6,037,196
- Issue date Mar 14, 2000
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing an MOS transistor
- Patent number 5,998,271
- Issue date Dec 7, 1999
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit structure having at least one MOS transistor and method for...
- Patent number 5,965,926
- Issue date Oct 12, 1999
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFETs with improved short channel effects
- Patent number 5,932,919
- Issue date Aug 3, 1999
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a CMOS circuit
- Patent number 5,913,115
- Issue date Jun 15, 1999
- Siemens Aktiengesellschaft
- Markus Biebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing an integrated CMOS circuit
- Patent number 5,882,965
- Issue date Mar 16, 1999
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the production of an integrated CMOS circuit
- Patent number 5,882,964
- Issue date Mar 16, 1999
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low junction leakage mosfets with particular sidewall spacer structure
- Patent number 5,872,382
- Issue date Feb 16, 1999
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure for an MOS transistor and method for fabric...
- Patent number 5,817,570
- Issue date Oct 6, 1998
- Siemens Aktiengesellschaft
- Martin Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of silicided junctions in deep submicron MOSFETS by defec...
- Patent number 5,780,929
- Issue date Jul 14, 1998
- Siemens Aktiengesellschaft
- Heinrich Zeininger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a diffusion region adjacent to a recess in a...
- Patent number 5,726,094
- Issue date Mar 10, 1998
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an insulating trench in an SOI substrate f...
- Patent number 5,700,712
- Issue date Dec 23, 1997
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Off-state gate-oxide field reduction in CMOS
- Patent number 5,602,410
- Issue date Feb 11, 1997
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor and method for the manufacture thereof
- Patent number 5,528,053
- Issue date Jun 18, 1996
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an insulating trench in a substrate for sm...
- Patent number 5,496,765
- Issue date Mar 5, 1996
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit arrangement having at least one power component...
- Patent number 5,473,181
- Issue date Dec 5, 1995
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an integrated circuit arrangement
- Patent number 5,470,782
- Issue date Nov 28, 1995
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a trench in a substrate for use in smart-p...
- Patent number 5,445,988
- Issue date Aug 29, 1995
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low junction leakage MOSFETs
- Patent number 5,439,831
- Issue date Aug 8, 1995
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an insulating trench in an SOI substrate
- Patent number 5,416,041
- Issue date May 16, 1995
- Siemens Aktiengesellschaft
- Udo Schwalke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of silicided junctions in deep sub-micron MOSFETs by defe...
- Patent number 5,344,793
- Issue date Sep 6, 1994
- Siemens Aktiengesellschaft
- Heinrich Zeininger
- H01 - BASIC ELECTRIC ELEMENTS

Udo Schwalke

Person

Patents Grantslast 30 patents

Integrated circuit arrangement and method for the manufacture thereof

MOSFETs with improved short channel effects and method of making th...

Semiconductor structure for a MOS transistor

Method for manufacturing an integrated circuit arrangement

Process for producing an integrated circuit device with at least on...

Method of producing an MOS transistor

Circuit structure having at least one MOS transistor and method for...

MOSFETs with improved short channel effects

Method for producing a CMOS circuit

Process for manufacturing an integrated CMOS circuit

Process for the production of an integrated CMOS circuit

Low junction leakage mosfets with particular sidewall spacer structure

Semiconductor structure for an MOS transistor and method for fabric...

Formation of silicided junctions in deep submicron MOSFETS by defec...

Process for producing a diffusion region adjacent to a recess in a...

Method for manufacturing an insulating trench in an SOI substrate f...

Off-state gate-oxide field reduction in CMOS

Thin-film transistor and method for the manufacture thereof

Method for manufacturing an insulating trench in a substrate for sm...

Integrated circuit arrangement having at least one power component...

Method for manufacturing an integrated circuit arrangement

Method for manufacturing a trench in a substrate for use in smart-p...

Low junction leakage MOSFETs

Method for producing an insulating trench in an SOI substrate

Formation of silicided junctions in deep sub-micron MOSFETs by defe...