Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material

CCHEMISTRY METALLURGY C23Surface treatment C23CCOATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL

C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material

C23C14/0005Separation of the coating from the substrate C23C14/001Coating on a liquid substrate C23C14/0015characterized by the colour of the layer C23C14/0021Reactive sputtering or evaporation C23C14/0026Activation or excitation of reactive gases outside the coating chamber C23C14/0031Bombardment of substrates by reactive ion beams C23C14/0036Reactive sputtering C23C14/0042Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements C23C14/0047Activation or excitation of reactive gases outside the coating chamber C23C14/0052Bombardment of substrates by reactive ion beams C23C14/0057using reactive gases other than O2, H2O, N2, NH3 or CH4 C23C14/0063characterised by means for introducing or removing gases C23C14/0068characterised by means for confinement of gases or sputtered material C23C14/0073by exposing the substrates to reactive gases intermittently C23C14/0078by moving the substrates between spatially separate sputtering and reaction stations C23C14/0084Producing gradient compositions C23C14/0089in metallic mode C23C14/0094in transition mode C23C14/02Pre-treatment of the material to be coated C23C14/021Cleaning or etching treatments C23C14/022by means of bombardment with energetic particles or radiation C23C14/024Deposition of sublayers C23C14/025Metallic sublayers C23C14/027Graded interfaces C23C14/028Physical treatment to alter the texture of the substrate surface C23C14/04Coating on selected surface areas C23C14/042using masks C23C14/044using masks to redistribute rather than totally prevent coating C23C14/046Coating cavities or hollow spaces C23C14/048using irradiation by energy or particles C23C14/06characterised by the coating material C23C14/0605Carbon C23C14/0611Diamond C23C14/0617AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi C23C14/0623Sulfides, selenides or tellurides C23C14/0629of zinc, cadmium or mercury C23C14/0635Carbides C23C14/0641Nitrides C23C14/0647Boron nitride C23C14/0652Silicon nitride C23C14/0658Carbon nitride C23C14/0664Carbonitrides C23C14/067Borides C23C14/0676Oxynitrides C23C14/0682Silicides C23C14/0688Cermets C23C14/0694Halides C23C14/08Oxides C23C14/081of aluminium, magnesium or beryllium C23C14/082of alkaline earth metals C23C14/083of refractory metals or yttrium C23C14/085of iron group metals C23C14/086of zinc, germanium, cadmium, indium, tin, thallium or bismuth C23C14/087of copper or solid solutions thereof C23C14/088of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal C23C14/10Glass or silica C23C14/12Organic material C23C14/14Metallic material, boron or silicon C23C14/16on metallic substrates or on substrates of boron or silicon C23C14/165by cathodic sputtering C23C14/18on other inorganic substrates C23C14/185by cathodic sputtering C23C14/20on organic substrates C23C14/205by cathodic sputtering C23C14/22characterised by the process of coating C23C14/221Ion beam deposition C23C14/223specialy adapted for coating particles C23C14/225Oblique incidence of vaporised material on substrate C23C14/226in order to form films with columnar structure C23C14/228Gas flow assisted PVD deposition C23C14/24Vacuum evaporation C23C14/243Crucibles for source material C23C14/246Replenishment of source material C23C14/26by resistance or inductive heating of the source C23C14/28by wave energy or particle radiation C23C14/30by electron bombardment C23C14/32by explosion by evaporation and subsequent ionisation of the vapours C23C14/325Electric arc evaporation C23C14/34Sputtering C23C14/3407Cathode assembly for sputtering apparatus C23C14/3414Metallurgical or chemical aspects of target preparation C23C14/3421using heated targets C23C14/3428using liquid targets C23C14/3435Applying energy to the substrate during sputtering C23C14/3442using an ion beam C23C14/345using substrate bias C23C14/3457using other particles than noble gas ions C23C14/3464using more than one target C23C14/3471Introduction of auxiliary energy into the plasma C23C14/3478using electrons C23C14/3485using pulsed power to the target C23C14/3492Variation of parameters during sputtering C23C14/35by application of a magnetic field C23C14/351using a magnetic field in close vicinity to the substrate C23C14/352using more than one target C23C14/354Introduction of auxiliary energy into the plasma C23C14/355using electrons C23C14/357Microwaves C23C14/358Inductive energy C23C14/46by ion beam produced by an external ion source C23C14/48Ion implantation C23C14/50Substrate holders C23C14/505for rotation of the substrates C23C14/52Means for observation of the coating process C23C14/54Controlling or regulating the coating process C23C14/541Heating or cooling of the substrates C23C14/542Controlling the film thickness or evaporation rate C23C14/543using measurement on the vapor source C23C14/544using measurement in the gas phase C23C14/545using measurement on deposited material C23C14/546using crystal oscillators C23C14/547using optical methods C23C14/548Controlling the composition C23C14/56Apparatus specially adapted for continuous coating Arrangements for maintaining the vacuum C23C14/562for coating elongated substrates C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases C23C14/566using a load-lock chamber C23C14/568Transferring the substrates through a series of coating stations C23C14/58After-treatment C23C14/5806Thermal treatment C23C14/5813using lasers C23C14/582using electron bombardment C23C14/5826Plasma treatment C23C14/5833Ion beam bombardment C23C14/584Non-reactive treatment C23C14/5846Reactive treatment C23C14/5853Oxidation C23C14/586Nitriding C23C14/5866Treatment with sulfur, selenium or tellurium C23C14/5873Removal of material C23C14/588by mechanical treatment C23C14/5886Mechanical treatment C23C14/5893Mixing of deposited material