The present disclosure relates to the field of chip package technology, and in particular, to an MCM package structure and a manufacturing method therefor.
During package, dies having different functions are often encapsulated in one package structure to form specific functions, known as Multi-Chip Module (MCM), which has advantages such as small volume, high reliability, high performance and versatility.
In recent years, with the continuous development of circuit integration technology, electronic products are increasingly developing toward miniaturization, intelligence, high integration, high performance, and high reliability. Package technology not only affects the performance of products, but also restricts the miniaturization thereof.
After a product is miniaturized, heat dissipation performance becomes crucial for the product.
In view of this, the present disclosure provides an MCM package structure and a manufacturing method therefor to meet the requirements of small volume, compact structure, high integration, and good heat dissipation performance for the package structure.
An object of the present disclosure is to provide an MCM package structure and a manufacturing method therefor to meet the requirements of small volume, compact structure, high integration, and good heat dissipation performance for the package structure.
To achieve the object, in a first aspect of the present disclosure, an MCM package structure is provided, including:
In a second aspect of the present disclosure, a method for manufacturing an MCM package structure is provided, including:
In a third aspect of the present disclosure, another method for manufacturing an MCM package structure is provided, including:
In a fourth aspect of the present disclosure, another method for manufacturing an MCM package structure is provided, including:
During the research, inventors found that: the MCM package structure may be implemented in two ways: stacking multiple dies in the package structure and stacking multiple chip package structures in the package structure.
Stacking the multiple dies in the package structure refers to: flipping the dies on their corresponding substrates first, where both sides of each substrate are provided with interconnection solder joints, and then stacking the multiple substrates through the interconnection solder joints for electrical interconnection.
Stacking the multiple chip package structures in the package structure refers to: overlapping small-scale package bodies with the same type and similar size, and using end arrangement of original standard package bodies to braze the same terminals of the overlapped small-scale package bodies together for achieving the electrical connection between respective package bodies.
However, on one hand, the size of the MCM package structure is relatively large and the package process thereof is cumbersome. On the other hand, the heat dissipation of the package structure is achieved through a heat dissipation electrode electrically connected to pads, and the heat dissipation effect is limited.
Unlike the above two package ways, in the MCM package structure of the present disclosure, the first die and the second die are encapsulated in the plastic encapsulation layer, where the first die includes first pads located on the active surface of the first die, the first die is provided with the accommodating recess, and the opening of the accommodating recess is located on the back surface of the first die: the second die includes second pads located on the active surface of the second die, the second die is arranged in the accommodating recess and fixed with the first die through the thermal conductive adhesive, and the active surface of the second die faces away from the active surface of the first die: the electric connection structure penetrates between the front surface of the plastic encapsulation layer and the back surface of the plastic encapsulation layer: the first electric conductive structure is provided on a side of the back surface of the plastic encapsulation layer and connected to at least the electric connection structure and at least one of the first pads: the second electric conductive structure and the heat dissipation electrode are provided on a side of the front surface of the plastic encapsulation layer, and the second electric conductive structure is connected to at least the electric connection structure and at least one of the second pads: the heat dissipation electrode is connected to the thermal conductive adhesive. In the MCM package structure, the thermal conductive adhesive can contact not only a bottom wall and four side walls of the accommodating recess, but also a bottom wall and four side walls of the second die, with a larger contact area therebetween, so that the heat dissipation effect on the first die and the second die can be improved.
Details of one or more embodiments of the present application will be presented in the accompanying drawings and description below: Other features, objects and advantages of the present application will become apparent from the description, the accompanying drawings and the claims.
For the convenience of understanding the present disclosure, all reference signs appearing in the present disclosure are listed below:
In order to make the objects, features and advantages of the present disclosure more apparent and easier to understand, the specific embodiments of the present disclosure will be explained in detail below with reference to the accompanying drawings.
As shown in
The first die 11 and the second die 12 may include power dies, memory dies, sensor dies, radio frequency dies, or corresponding control chips. Functions of the first die 11 and the second die 12 are not limited in the embodiments.
The first die 11 includes the active surface 11a and back surface 11b facing oppositely. The first pads 111 are located on the active surface 11a. The first die 11 may include various devices formed on a semiconductor base, and electric interconnection structures electrically connected to the devices. The first pads 111 are connected to the electric interconnection structures for inputting/outputting electric signals of the devices.
The second die 12 includes the active surface 12a and back surface 12b facing oppositely. The second pads 121 are located on the active surface 12a. The second die 12 may include various devices formed on a semiconductor base, and electric interconnection structures electrically connected to the devices. The second pads 121 are connected to the electric interconnection structures for inputting/outputting electric signals of the devices.
The second die 12 is arranged in the accommodating recess 110 of the first die 11, and a mutual back-to-back arrangement manner, an obliquely opposite arrangement manner, or a side-by-side arrangement manner may be adopted to reduce a volume of the MCM package structure 1. The back-to-back arrangement manner refers to that: the back surface 11b of the first die 11 is adhered to the back surface 12b of the second die 12. The obliquely opposite arrangement manner refers to that: the back surface 11b of the first die 11 and the back surface 12b of the second die 12 face toward each other, but the first die 11 and the second die 12 are misaligned in both their thickness direction and vertical thickness direction. The side-by-side arrangement manner refers to that: the back surface 11b of the first die 11 and the back surface 12b of the second die 12 face toward a same direction, and the active surface 11a of the first die 11 and the active surface 12a of the second die 12 face toward a same direction.
In this embodiment, as shown in
The first protective layer 112 has a first opening that exposes the first pads 111. The second protective layer 122 has a second opening that exposes the second pads 121.
In other embodiments, the first protective layer 112 and/or the second protective layer 122 may be omitted, or when the materials for the second protective layer 122 are inorganic materials, ABF is provided on the second protective layer 122.
In an optional solution, the thermal conductive adhesive 13 may include copper powder and an adhesion agent. In other optional solutions, the thermal conductive adhesive 13 may include thermal conductive polymer materials and an adhesion agent.
An upper surface of the thermal conductive adhesive 13 is lower than an upper surface of the second protective layer 122.
In this embodiment, as shown in
In other embodiments, the leveling layer 20 may be omitted.
Materials for the plastic encapsulation layer 14 may include epoxy resin, polyimide resin, benzocyclobutene resin, polybenzoxazole resin, polybutylene terephthalate, polycarbonate, polyethylene glycol terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyether sulfone, polyamide, polyurethane, ethylene vinyl acetate copolymers, polyvinyl alcohol, etc. The materials for the plastic encapsulation layer 14 may further include various polymers or composite materials of resin and polymers.
The plastic encapsulation layer 14 includes the front surface 14a and back surface 14b facing oppositely. In this embodiment, the leveling layer 20 is exposed by the front surface 14a of the plastic encapsulation layer 14, and the first protective layer 112 is exposed by the back surface 14b of the plastic encapsulation layer 14.
In this embodiment, the first electric conductive bump 15 is a back external connection end of the MCM package structure 1, and the second electric conductive bump 18 is a front external connection end of the MCM package structure 1. The electric conductive layer 17 enables the electric connection between the first die 11 and the second die 12.
The heat dissipation electrode 19 is connected to the thermal conductive adhesive 13. The thermal conductive adhesive 13 contacts not only a bottom wall and four side walls of the accommodating recess 110, but also a bottom wall and four side walls of the second die 12, which allows a larger contact area therebetween, so that the heat dissipation effect on the first die 11 and the second die 12 can be improved.
In another embodiment, the first electric conductive bump 15 may be replaced with a first rewiring layer. The first rewiring layer includes a plurality of metal blocks, and includes one or more layers. Some of the metal blocks are selectively electrically connected to a certain number of the first pads 111, so as to achieve the circuit layout of the first pads 111. Some of the metal blocks are electrically connected to the electric conductive layer 17, so as to lead electric signals of the first die 11 to the front surface 14a of the plastic encapsulation layer 14. The first rewiring layer can improve the wiring complexity of the MCM package structure 1, and increase the integration thereof.
A first dielectric layer that embeds the first rewiring layer may be disposed on the back surface 14b of the plastic encapsulation layer 14. In other words, the MCM package structure 1 has only the front external connection end.
In some embodiments, the first electric conductive bump 15 and the first dielectric layer may be disposed on the first rewiring layer. The first electric conductive bump 15 is exposed outside the first dielectric layer and still serves as the back external connection end.
In another embodiment, the second electric conductive bump 18 may be replaced with a second rewiring layer. The second rewiring layer includes a plurality of metal blocks, and includes one or more layers. Some of the metal blocks are selectively electrically connected to a certain number of the second pads 121, so as to achieve the circuit layout of the second pads 121. Some of the metal blocks are electrically connected to the electric conductive layer 17, so as to lead electric signals of the second die 12 to the back surface 14b of the plastic encapsulation layer 14. The second rewiring layer can improve the wiring complexity of the MCM package structure 1, and increase the integration thereof.
A second dielectric layer that embeds the second rewiring layer may be disposed on the leveling layer 20 and the front surface 14a of the plastic encapsulation layer 14. In other words, the MCM package structure 1 has only the back external connection end.
In some embodiments, the second electric conductive bump 18 and the second dielectric layer may be disposed on the second rewiring layer. The second electric conductive bump 18 is exposed outside the second dielectric layer and still serves as the front external connection end.
Materials for the first dielectric layer and the second dielectric layer may include insulating resin materials or inorganic materials. The insulating resin materials include, for example, polyimide, epoxy resin, ABF (Ajinomoto buildup film), PBO (Polybenzoxazole), organic polymer film, organic polymer composite materials and other organic materials with similar insulating property: The inorganic materials include, for example at least one of silicon dioxide, silicon nitride or the like. Compared to the inorganic materials, the insulating resin materials have a lower tensile stress, which can prevent a surface of the MCM package structure 1 from warping.
In an embodiment of the present disclosure, a method for manufacturing the MCM package structure 1 in
First, referring to step S1 in
In this embodiment, forming the plastic encapsulation intermediate body 10 may include steps S11 to S12.
At step S11, as shown in
The accommodating recess 110 may be accomplished through dry etching or wet etching. During the dry etching or the wet etching, the back surface 11b of the first die 11 is covered with a mask layer, and a mask plate used for exposure of the mask layer may be aligned with the help of the first pads 111 located on the active surface 11a of the first die 11. For example, a position of the first pads 111 may be acquired by using the technology of infrared penetration through the first die 11.
In this embodiment, as shown in
The first protective layer 112 includes a first opening that exposes the first pads 111. The second protective layer 122 includes a second opening that exposes the second pads 121.
In other embodiments, the first protective layer 112 and/or the second protective layer 122 may be omitted.
In this embodiment, a method for forming a set of to-be-plastic-encapsulated parts 40 in step S11 may include steps S111 to S114.
At step S111, the first die 11 is provided, and a semi-solid thermal conductive adhesive is disposed in the accommodating recess 110.
The semi-solid thermal conductive adhesive may include copper powder and an adhesion agent, or thermal conductive polymer materials and an adhesion agent. The semi-solid thermal conductive adhesive may be brushed inside the accommodating recess 110 with a brush head.
At step S112, the second die 12 is provided, the active surface 12a of the second die 12 faces away from the active surface 11a of the first die 11, and the second die 12 is arranged in the accommodating recess 110.
When the second die 12 is arranged in the accommodating recess 110, the second die 12 is embedded in the semi-solid thermal conductive adhesive.
At step S113, the semi-solid thermal conductive adhesive is solidified to fix the second die 12 and the first die 11.
The semi-solid thermal conductive adhesive may be solidified through heating to volatilize organic matter in the adhesion agent, thereby being densified and hardened.
In this embodiment, after step S112 and before step S113, the semi-solid thermal conductive adhesive is filled between the accommodating recess 110 and the second die 12, and the semi-solid thermal conductive adhesive contacts at least a portion of side walls of the accommodating recess 110, at least a portion of side walls of the second die 12, a bottom wall of the accommodating recess 110, and a bottom wall of the second die 12.
At step S114, the second protective layer 122, the second pads 121, the thermal conductive adhesive 13, and the back surface 11b of the first die 11 are covered with a leveling layer 20. The leveling layer 20 may be ABF.
In another embodiment, a method for forming a set of to-be-plastic-encapsulated parts 40 in step S11 may include steps S111′ to S114.
At step S111′, the first die 11 is provided, and a liquid thermal conductive adhesive is disposed in the accommodating recess 110 and semi-solidified to form a semi-solid thermal conductive adhesive.
The liquid thermal conductive adhesive may include: a liquid metal electric conductive adhesive and/or a liquid carbon electric conductive adhesive. The liquid thermal conductive adhesive may be semi-solidified through heating.
At step S112, the second die 12 is provided, the active surface 12a of the second die 12 faces away from the active surface 11a of the first die 11, and the second die 12 is arranged in the accommodating recess 110.
When the second die 12 is arranged in the accommodating recess 110, the second die 12 is embedded in the semi-solid thermal conductive adhesive.
At step S113, the semi-solid thermal conductive adhesive is solidified to fix the second die 12 and the first die 11.
The semi-solid thermal conductive adhesive may be solidified through heating to volatilize organic matter in the semi-solidified metal thermal conductive adhesive and/or the semi-solidified carbon thermal conductive adhesive, thereby being densified and hardened.
At step S114, the second protective layer 122, the second pads 121, the thermal conductive adhesive 13, and the back surface 11b of the first die 11 are covered with a leveling layer 20. The leveling layer 20 may be ABF.
The carrier plate 30 is a hard plate, and may include a plastic plate, a glass plate, a ceramic plate, a metal plate or the like.
When the multiple sets of to-be-plastic-encapsulated parts 40 are arranged on a surface of the carrier plate 30, an adhesive layer may be applied to the whole surface of the carrier plate 30, and the multiple sets of to-be-plastic encapsulated parts 40 may be placed on the adhesive layer.
The adhesive layer may be made of materials that are easy to peel off, so that the carrier plate 30 can be peeled off. For example, thermal separation materials that can lose their adhesiveness through heating or UV separation materials that can lose their adhesiveness through UV irradiation may be used.
A set of to-be-plastic-encapsulated parts 40 is located in a region on the surface of the carrier plate 30 for subsequent cutting. Multiple sets of to-be-plastic-encapsulated parts 40 are fixed on the surface of the carrier plate 30, so that multiple MCM package structures 1 can be simultaneously produced, which is beneficial to mass production and cost reduction. In some embodiments, a set of to-be-plastic-encapsulated parts 40 may be fixed on the surface of the carrier plate 30.
At step S12, as shown in
Materials for the plastic encapsulation layer 14 may include epoxy resin, polyimide resin, benzocyclobutene resin, polybenzoxazole resin, polybutylene terephthalate, polycarbonate, polyethylene glycol terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyether sulfone, polyamide, polyurethane, ethylene vinyl acetate copolymers, polyvinyl alcohol, etc. The materials for the plastic encapsulation layer 14 may further include various polymers or composite materials of resin and polymers. Correspondingly, plastic encapsulation may include first filling liquid plastic encapsulation materials, and then performing high-temperature solidification through a plastic encapsulation mold. In some embodiments, the plastic encapsulation layer 14 may be formed in a manner of plastic material molding such as hot-press molding and transfer molding.
The plastic encapsulation layer 14 may include a front surface 14a and a back surface 14b facing oppositely.
As shown in
In this embodiment, since there is the first protective layer 112 on the active surface 11a of the first die 11, the plastic encapsulation layer 14 is thinned from the back surface 14b of the plastic encapsulation layer 14 until the first protective layer 112 is exposed.
During the formation of the plastic encapsulation layer 14 and the grinding of the plastic encapsulation layer 14, the first protective layer 112 and the second protective layer 122 can prevent damages to electric interconnection structures and devices within the first pads 111, the first die 11, the second pads 121 and the second die 12.
In other embodiments, when the plastic encapsulation intermediate body 10 is formed, in each set of to-be-plastic-encapsulated parts 40, the active surface 12a of the second die 12 faces toward the carrier plate 30. Then, the plastic encapsulation layer 14 is thinned from the front surface 14a of the plastic encapsulation layer 14 until the active surface 12a of the second die 12 is exposed. When there is the second protective layer 122 on the active surface 12a of the second die 12, the plastic encapsulation layer 14 is thinned from the front surface 14a of the plastic encapsulation layer 14 until the second protective layer 122 is exposed.
Next, referring to step S2 in
The first electric conductive bump 15 may be accomplished through electroplating. The technology of electroplating copper or aluminum is relatively mature.
In this embodiment, the first electric conductive bump 15 serves as a back external connection end of the MCM package structure 1.
In other embodiments, an anti-oxidation layer may be formed on the first electric conductive bump 15.
The anti-oxidation layer may include: a1) a tin layer, or a2) a nickel layer and a gold layer stacked from bottom to top, or a3) a nickel layer, a palladium layer and a gold layer stacked from bottom to top. The anti-oxidation layer may be formed through electroplating. Materials for the first electric conductive bump 15 may be copper, and the anti-oxidation layer can prevent copper oxidation, and further prevent deterioration of electric connection performance due to the copper oxidation.
In another embodiment, the first electric conductive bump 15 may be replaced with a first rewiring layer. The first rewiring layer includes a plurality of metal blocks, and includes one or more layers. Some of the metal blocks are selectively electrically connected to a certain number of the first pads 111, so as to achieve the circuit layout of the first pads 111. Some of the metal blocks are electrically connected to the electric conductive layer 17, so as to lead electric signals of the first die 11 to the front surface 14a of the plastic encapsulation layer 14. The first rewiring layer can improve the wiring complexity of the MCM package structure, and increase the integration thereof.
A first dielectric layer that embeds the first rewiring layer may be disposed on the back surface 14b of the plastic encapsulation layer 14. In other words, the MCM package structure has only a front external connection end.
In some embodiments, the first electric conductive bump 15 may be disposed on the first rewiring layer. The first electric conductive bump 15 is exposed outside the first dielectric layer and still serves as the back external connection end.
After the first electric conductive bump 15 is formed, the carrier plate 30 may be removed. Manners for removing the carrier plate 30 may be laser peeling, UV irradiation, and other existing removal manners.
Next, referring to step S3 in
The through hole 16 may be formed through laser drilling.
As shown in
The support plate 31 is a hard plate, and may include a glass plate, a ceramic plate, a metal plate or the like.
Then, referring to step S4 in
Before the second electric conductive bump 18 is formed, openings that expose the second pads 121 and the thermal conductive adhesive 13 are formed in the leveling layer 20 first.
In this embodiment, in the second die 12, the second protective layer 122 includes the second opening that exposes the second pads 121. Therefore, a portion of a thickness of the leveling layer 20 is removed through laser drilling first, and a portion thereof is retained, where the retained thickness may be 3 μm˜5 μm: afterwards, a portion of the thickness of the leveling layer 20 is removed through plasma cleaning to expose the second pads 121. The energy of plasma cleaning is lower than that of laser drilling, which can prevent a damage to the second pads 121 when the second pads 121 are exposed through laser drilling.
In addition, in order to prevent damages to the leveling layer 20 and the plastic encapsulation layer 14 due to plasma cleaning, a metal mask layer may be formed on the leveling layer 20 and the front surface of the plastic encapsulation layer 14, and materials for the metal mask layer may be copper. After the second pads 121 are exposed, the metal mask layer is removed.
For the formation of the opening that exposes the thermal conductive adhesive 13 in the leveling layer 20, reference may be made to the method for forming the opening that exposes the second pads 121.
The second electric conductive bump 18 may be accomplished through electroplating. The technology of electroplating copper or aluminum is relatively mature. In this embodiment, the second electric conductive bump 18 serves as a front external connection end of the MCM package structure 1.
In other embodiments, an anti-oxidation layer may be formed on the second electric conductive bump 18.
The anti-oxidation layer may include: b1) a tin layer, or b2) a nickel layer and a gold layer stacked from bottom to top, or b3) a nickel layer, a palladium layer and a gold layer stacked from bottom to top. The anti-oxidation layer may be formed through electroplating. Materials for the second electric conductive bump 18 may be copper, and the anti-oxidation layer can prevent copper oxidation, and further prevent deterioration of electric connection performance due to the copper oxidation.
In another embodiment, the second electric conductive bump 18 may be replaced with a second rewiring layer. The second rewiring layer includes a plurality of metal blocks, with one or more layers. Some of the metal blocks are selectively electrically connected to a certain number of the second pads 121, so as to achieve the circuit layout of the second pads 121. Some of the metal blocks are electrically connected to the electric conductive layer 17, so as to lead electric signals of the second die 12 to the back surface 14b of the plastic encapsulation layer 14. The second rewiring layer can improve the wiring complexity of the MCM package structure, and increase the integration thereof.
A second dielectric layer that embeds the second rewiring layer may be disposed on the leveling layer 20 and the front surface 14a of the plastic encapsulation layer 14. In other words, the MCM package structure has only the back external connection end.
In some embodiments, the second electric conductive bump 18 may be disposed on the second rewiring layer. The second electric conductive bump 18 is exposed outside the second dielectric layer and still serves as the front external connection end.
After the second electric conductive bump 18 is formed, as shown in
Manners for removing the support plate 31 may be laser peeling. UV irradiation, and other existing removal manners.
Then, referring to step S5 in
Each of the MCM package structures 1 includes a set of to-be-plastic-encapsulated parts 40.
In other embodiments, the second electric conductive bump 18 may be formed first, and then the first electric conductive bump 15 is formed. The through hole 16 exposes the second electric conductive bump 18.
As shown in
A method for forming the electric conductive plug 21 may include: first forming an opening in the plastic encapsulation layer 14 through laser drilling, and then filling the electric conductive layer in the opening through electroplating.
Except for the above differences, for other structures of the MCM package structure 2 in this embodiment and other steps in their manufacturing methods, reference may be made to other structures of the MCM package structure 1 in the aforementioned embodiments and other steps in their manufacturing methods.
As shown in
In other words, in the method for forming the plastic encapsulation intermediate body 10, in addition to the first die 11 and the second die 12, each set of to-be-plastic-encapsulated parts 40) includes the electric conductive column 22.
Except for the above differences, for other structures of the MCM package structure 3 in this embodiment and other steps in their manufacturing methods, reference may be made to other structures of the MCM package structures 1 and 2 in the aforementioned embodiments and other steps in their manufacturing methods.
As shown in
When the first die 11 and the second die 12 are IGBT (Insulate-Gate Bipolar Transistor) dies, the first back electrode 113 and the second back electrode 123 are drain electrodes and may be grounded.
The thermal conductive adhesive 13 that has the electric conductive function may include nano-copper/electric conductive polymer composite materials. The nano-copper/electric conductive polymer composite materials are composite materials formed by adding nano-copper particles to electric conductive polymers and uniformly dispersing the nano-copper particles in the electric conductive polymers.
The nano-copper/electric conductive polymer composite materials, when being disposed in the accommodating recess 110, are of a solid flat-sheet structure. A temperature can be increased above a glass transition temperature of the electric conductive polymer materials through heating. At this time, the electric conductive polymer materials are changed from a solid to a semi-liquid having certain viscosity, so that the first die 11 and the second die 12 are adhered together.
In the nano-copper/electric conductive polymer composite materials, the electric conductive polymers may include at least one of polypyrrole, polythiophene, polyaniline or polyphenylene sulfide. The electric conductive polymers are polymers with conjugated x-bonds that undergo chemical or electrochemical “doping” so that the polymers are transformed from an insulator into a conductor. The electric conductive polymers have an excellent electric conductivity, and the electric conductivity is further enhanced after the addition of nano-copper.
The copper material is one of metal materials with the best electric conductivity, and when the scale of copper is reduced to a nanoscale, the material has better electric and thermal conductivities due to its large specific surface area and high surface activity energy. Preferably, nano-copper is in a spherical shape, with a particle size less than 800 nm: further preferably, the particle size of nano-copper is in a range of 200 nm˜500 nm. This is because: the specific surface area of the nano-copper material is increased as the particle size of the material is reduced, and the electric and thermal conductivities of the material are enhanced accordingly: when the particle size is reduced to 800 nm or below; the material exhibits excellent electric and thermal conductivities: however, when the particle size continues to be reduced to 200 nm or below; the cost of the nano-material is increased significantly, which will affect the economic benefit of package, and when the particle size of nano-copper is reduced to 200 nm or blow; the surface energy of the nano-copper particles is increased, and the particles are easily aggregated to form larger particles, which will damage the electric and thermal conductivities of the composite materials.
Preferably, in the nano-copper/electric conductive polymer composite materials, an added amount of nano-copper is greater than 5 wt %.
Except for the above differences, for other structures of the MCM package structure 4 in this embodiment, reference may be made to other structures of the MCM package structures 1 and 2 in the aforementioned embodiments.
For a method for manufacturing the MCM package structure 4, reference may be made to that for manufacturing the MCM package structures 1, 2 and 3 in the first, second and third embodiments.
As shown in
In this embodiment, a first recess 110a may be disposed on the back surface 11b of the first die 11, and then a second recess 110b may be disposed in the first recess 110a. A depth of the second recess 110b is greater than that of the first recess 110a. The second recess 110b is the accommodating recess 110. The first recess 110a may be used to define the region of the thermal conductive adhesive 13.
In other embodiments, continuously, a third recess may be disposed in the second recess 110b, . . . , a depth of the third recess is greater than that of the second recess 110b, . . . .
Except for the above differences, for other structures of the MCM package structure 5 in this embodiment and other steps in their manufacturing methods, reference may be made to other structures of the MCM package structures 1, 2, 3 and 4 in the aforementioned embodiments and other steps in their manufacturing methods.
Although the present disclosure is disclosed above, the present disclosure is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the scope defined by the claims.
Number | Date | Country | Kind |
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202110864854.4 | Jul 2021 | CN | national |
This application is a national stage of International Application No. PCT/CN2022/089779, filed on Apr. 28, 2022, which claims priority to Chinese Patent Application No. 202110864854.4, filed on Jul. 29, 2021, which are hereby incorporated by reference in their entirety.
Filing Document | Filing Date | Country | Kind |
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PCT/CN2022/089779 | 4/28/2022 | WO |