Claims
- 1. A method of manufacturing a semiconductor device including: a semiconductor component having an active surface processed to form a mesa portion and an electrode formed on a top of the mesa portion; and a substrate on which the semiconductor component is to be mounted, the semiconductor component being mounted on the substrate so that the active surface is positioned on a side of the substrate, the method comprising:forming a first bump and a second bump on a surface of the substrate so that the second bump is higher than the first bump; transferring a conductive adhesive member at least onto the first bump; and mounting the semiconductor component on the substrate so that the first bump does not come into contact with the electrode while electrically connected to the electrode via the conductive adhesive member.
- 2. The method of manufacturing a semiconductor device according to claim 1, wherein the first bump and the second bump are formed so that difference in height between the first bump and the second bump is greater than a height of the mesa portion.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-122101 |
Apr 1999 |
JP |
|
Parent Case Info
“This application is a divisional of application Ser. No. 09/558,470, filed Apr. 24, 2000 now U.S. Pat. No. 6,348,739, which application(s) are incorporated herein by reference.”
US Referenced Citations (12)
Foreign Referenced Citations (4)
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Mar 1982 |
JP |
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Jun 1992 |
JP |
9-213988 |
Aug 1997 |
JP |
00349113 |
Dec 2000 |
JP |
Non-Patent Literature Citations (2)
Entry |
“An InP/InGaAs p-I-n/HBT Monolithic Transimipedance Photoreceiver”, Chandrasekhar et al., IEEE Photonics Technology Letters, vol. 2, No. 7, Jul. 1990. |
“Monolithic pin-Hemt Receiver with Internal Equalizer for Long-Wavelength Fibre Optic Communications”, Yano et al., Electronic Letters, vol. 26, No. 5, Mar. 1, 1990. |