SEMICONDUCTOR DEVICE

Abstract

The semiconductor device, including an electrode formed on the surface of a semiconductor element; and a metallic ribbon connected to the electrode. The metallic ribbon has a depressed portion on a surface contacting to the electrode, and the metallic ribbon is connected to the electrode in such a state that the metallic ribbon is deformed toward the inside of the depressed portion.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a top plan view of the power semiconductor device according to the embodiment 1 of the present invention;

FIGS. 2A and 2B show partial cross sectional views of the power semiconductor device according to the embodiment 1 of the present invention;

FIGS. 3A and 3B show partial cross sectional views of the power semiconductor device according to the embodiment 2 of the present invention;

FIGS. 4A and 4B show top plan views of the power semiconductor device according to the embodiment 3 of the present invention;

FIGS. 5A and 5B show top plan views of the power semiconductor device according to the embodiment 1 of the present invention;

FIGS. 6A through 6D show top plan views of the metallic ribbon used for the power semiconductor device according to the embodiment 3 of the present invention;

FIG. 7 shows a side view of the conventional power semiconductor device; and

FIGS. 8A and 8B show partial cross sectional views of the conventional power semiconductor device.

Claims

1. A semiconductor device, comprising: an electrode formed on the surface of a semiconductor element; anda metallic ribbon connected to the electrode, whereinthe metallic ribbon has a depressed portion on a surface contacting to the electrode, and the metallic ribbon is connected to the electrode in such a state that the metallic ribbon is deformed toward the inside of the depressed portion.

2. A semiconductor device according to claim 1, wherein the cross-sectional shape of the depressed portion perpendicular to the longitudinal direction of the metallic ribbon is rectangular.

3. A semiconductor device according to claim 1, wherein the cross-sectional shape of the metallic ribbon perpendicular to the longitudinal direction of the metallic ribbon is formed of a plurality of circles partially connected to each other, so that the depressed portion is formed in the area surrounded by two adjacent circles.

4. A semiconductor device according to claim 1, wherein the depressed portion is a groove lied along the longitudinal direction of the metallic ribbon.

5. A semiconductor device according to claim 1, wherein a center part of the metallic ribbon projects outside than both ends at the end portion of the metallic ribbon, connected to the electrode.

6. A semiconductor device according to claim 5, wherein the both ends of the metallic ribbon have obtuse angles.