Semiconductor package, manufacturing method of semiconductor package

BACKGROUND OF THE INVENTION

[0001] This invention relates to a semiconductor package having an anode and a cathode. FIGS. 1 and 2 illustrate a conventional diode package 1 which is a semiconductor package having two electrodes, i.e., an anode and a cathode. FIG. 1 is a view of appearance and FIG. 2 is a sectional view thereof. In FIG. 1, two lead frames 2 and 3 are arranged on nearly the same axis, a semiconductor chip 4 is bonded onto the surface of one lead frame 2 by eutectic junction or press adhesion, a gold wire 5 is connected to the surface of the semiconductor chip 4, and the surface of the semiconductor chip 4 is electrically connected to the other lead frame 3 through the gold wire 5. The semiconductor chip 4, gold wire 5 and lead frames 2, 3 are molded with a resin 6 which has a nearly rectangular parallelopiped outer shape. An electric current flows between the lead frames 2 and 3 in the direction of thickness of the semiconductor chip 4. The diode package 1 has a size measuring, as the outer shape of resin 6, about 1.0 mm long, about 0.6 mm wide and about 0.55 mm high. The semiconductor chip 4 in the resin 6 measures 0.3 mm long, about 0.3 mm wide and about 0.15 mm high.

[0002] JP-A-8-306853 discloses a semiconductor package having a package size larger than the diode package and having three or more electrodes, i.e., having a structure in which many electrode pads and many leads are formed on the surface of a semiconductor chip, the electrode pads and the leads are connected together through wires, bump electrodes are formed on the portions of the leads, and the surfaces of the leads and the side surfaces of the semiconductor chip are sealed with a resin, while exposing the ends and side surfaces of the bump electrodes and the back surface of the semiconductor chip.

SUMMARY OF THE INVENTION

[0003] Accompanying the trend toward realizing electronic devices in small sizes and in reduced weights, however, the modules constituting the electronic devices have been fabricated in small sizes. Besides, electronic parts such as diode package 1 constituting the modules, too, have been realized in small sizes and in small heights. In order to decrease the size and height of the diode package 1, the package size must be decreased. In the conventional diode package 1 shown in FIGS. 1 and 2, the semiconductor chip 4 is formed on the lead frame 2 in a state of being raised above the bottom surface of the package, and is connected to the other lead frame 3 by bonding the gold wire 5. Therefore, limitation is imposed on reducing the height (thickness) of the package. In this conventional structure, even if it is attempted to greatly decrease the size of the semiconductor chip 4 or the lead frame in order to reduce the size of the package, the ratio at which they occupy the resin 6 decreases. Therefore, the occurrence of cracks of even a slight degree in the resin 6 could become a fatal defect. Even with the production process of the type of sealing with the resin described in the above publication, limitation is imposed on decreasing the size and it becomes necessary to change the structure of the package. In general, however, a change in the structure of the package is accompanied by an increase in the cost, and a package structure which suppresses the cost is desired. When it is attempted to decrease the size of the semiconductor package, further, the defect tends to occur at an increased frequency in the step of production, necessitating technology for guaranteeing high degree of reliability.

[0004] In view of the above circumstances inherent in the related art, it is an assignment of this invention to realize a small semiconductor package structure of a two-electrode constitution,, such as a diode package, suppressing an increase in the cost and maintaining high reliability.

[0005] This invention provides technology capable, of solving the above assignment.

[0006] In order to solve the above assignment, this invention deals with a semiconductor package having two electrodes which are an anode and a cathode, (1) the package having a structure in which the anode and the cathode are arranged on one surface of the chip, each electrode having a bump electrode for connecting the electrode to an external substrate, and an insulating resin is provided on the surfaces of the bump electrodes except at least the connection portions to the external substrate and on the surfaces of the semiconductor chip. The surfaces of the chip may include side surfaces of the chip formed surrounding the flat surface on where the anode and the cathode are arranged. As the method of manufacturing the package (2), a semiconductor wafer is produced comprising a plurality of semiconductor chips having the anode and the cathode arranged on the first surface of the chip and having bump electrodes formed on these electrodes, a groove is formed among the semiconductor chips on the semiconductor wafer, the chip surface and the surfaces of bump electrodes are covered with an insulating resin while filling the resin in the grooves, and the insulating resin is removed from the portions where the surfaces of the bump electrodes are connected to the external substrate. Then, after the insulating resin is cured, the semiconductor wafer is cut along the grooves and is separated into individual semiconductor chips. As the method of manufacturing the package (3), the semiconductor wafer is produced in the same manner as in (2) above, a second flat surface of the semiconductor wafer on the side opposite to the first surface is secured to a first dicing sheet for securing the wafer, and a groove is formed among the semiconductor chips. Then, the semiconductor chips are separated from each other, and are secured on the side of the end surfaces of the bump electrodes to a second dicing sheet having a stickiness stronger than that of the first dicing sheet. Thereafter, the first dicing sheet is removed from the second surface, the insulating resin is filled in the grooves, and the surfaces of the bump electrodes and the surfaces inclusive of the second surfaces of the semiconductor chips are covered with the insulating resin which is, then, cured. Thereafter, the semiconductor wafer is cut and separated into individual semiconductor chips in a state where the insulating resin in the grooves is left on the side surfaces, and the second dicing sheet is removed from the side of the ends of the bump electrodes.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007]
FIG. 1 is a view schematically illustrating a conventional diode package;

[0008]
FIG. 2 is a sectional view of the diode package of FIG. 1;

[0009]
FIG. 3 is a side view of a diode package of the bare chip type;

[0010]
FIG. 4 is a diagram illustrating the effect of the height of a bump electrode upon the stress in the interface between a semiconductor chip and the bump electrode;

[0011]
FIG. 5 is a view illustrating, on an enlarged scale, the vicinity of the bump electrode at the time of reflowing the solder;

[0012]
FIG. 6 is a side view of a diode package of the type of applying an insulating resin;

[0013]
FIG. 7 is a side view schematically illustrating the diode package of the bare chip type;

[0014]
FIG. 8 is a side view schematically illustrating the diode package of the type of applying an insulating resin;

[0015]
FIG. 9 is a sectional view of when the diode package of the type of applying an insulating resin is mounted on a substrate;

[0016]
FIG. 10 is a view illustrating, on an enlarged scale, the vicinity of the bump electrode in the constitution of FIG. 9;

[0017]
FIGS. 11A, 11B are diagrams illustrating a maximum main stress and a cumulative probability of breakdown in the interface between the semiconductor chip and the bump electrode by using the diode packages of the type of applying an insulating resin and of the bare chip type;

[0018]
FIG. 12 is a view schematically illustrating the diode package that is mounted on a substrate;

[0019]
FIG. 13 is a diagram illustrating a relationship between a maximum stress in the semiconductor chip and the load on the back surface of the diode package that is mounted on the substrate;

[0020]
FIGS. 14A to 14E are views illustrating a method of manufacturing a diode package of the type of applying an insulating resin;

[0021]
FIG. 15 is a view illustrating a state of being filled with an insulating resin of when a groove between the semiconductor chips is formed in a V-shape;

[0022]
FIG. 16 is a view illustrating a state of being filled with an insulating resin of when a groove between the semiconductor chips is formed in a parallel shape;

[0023]
FIG. 17 is a side view schematically illustrating the diode package of the type of applying an insulating resin by forming a groove of the V-shape;

[0024]
FIG. 18 is a side view schematically illustrating the diode package of the type of applying an insulating resin by forming a groove of the V-shape and a groove of the parallel shape;

[0025]
FIGS. 19A to 19E are views illustrating another method of manufacturing the diode package of the type of applying an insulating resin; and

[0026]
FIG. 20 is a view illustrating the appearance of the diode package of the type of applying an insulating resin.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0027] An embodiment of the invention will now be described with reference to the drawings. This embodiment deals with the case of a diode package.

[0028]
FIG. 3 illustrates a structure of a diode package 50 of the bare chip type. This diode package 50 is of a so-called lateral structure in which two electrodes including an anode and a cathode are formed on the front surface side of the semiconductor chip 10. An electrode 11 is formed on the surface of the semiconductor chip 10, an under bump metal 12 is deposited thereon by, for example, sputtering, and a bump electrode is formed by, for example, plating on the metal 12 to electrically connect the anode and the cathode to an external substrate. Here, to suppress the bump electrode 13 from being oxidized, a metal 14 is plated on the surface of the bump electrode 13 for suppressing the oxidation. When the connection to the external substrate is accomplished by the soldering (solder junction), the bump electrode 13 is chiefly composed of copper or nickel, and gold is plated as the metal 14 to suppress the oxidation of the bump electrode 13. The bump electrode 13 has a height of about 20 to 25 μm. Employment of the lateral structure makes it possible to lower the height of the package (decrease the size of height) which, incidentally, enables the thickness of the modules and electronic devices to be decreased.

[0029]
FIG. 4 is a diagram illustrating a relationship between the height of the bump electrode and a maximum stress occurring in the interface between the semiconductor chip 10 and the bump electrode 13 in the step of reflowing the solder for joining the diode package 50 to the external substrate 16 with the solder. FIG. 4 tells that the maximum stress increases with an increase in the height of the bump electrode 13, and cracks tend to occur in the semiconductor chip 10.

[0030]
FIG. 5 is a diagram illustrating, on an enlarged scale, the vicinity of the bump electrode 13. In FIG. 5, a shearing force F occurs at the end 13b of the bump electrode 13 due to a difference between the coefficient αc of expansion of the semiconductor chip 10 and the coefficient αk of expansion of the external substrate 16. A moment M of bending occurs in the bump electrode 13 due to the shearing force F and the height of the bump electrode 13, and a stress σ builds up in the interface B between the semiconductor chip 10 and the bump electrode 13. As the stress σ increases, cracks tend to develop in the semiconductor chip 10. To lower the stress σ, the moment M of bending occurring in the bump electrode 13 must be decreased. For this purpose, the height h of the bump electrode 13 must be decreased, and the shearing force F occurring in the end 13b of the bump electrode must be decreased. This becomes in agreement with the result of FIG. 4 above. For junction with solder, further, the external substrate 16 has been plated with the solder maintaining a thickness of about 10 μm. When the height h of the bump electrode is low, therefore, it becomes difficult to accomplish the connection to the external substrate 16. In the diode package 50 of the bare chip type shown in FIG. 3, an increased stress tends to build up in the interface between the semiconductor chip 10 and the bump electrode 13 at the time of mounting on the external substrate. As a result, cracks tend to develop in the semiconductor chip 10 and could become a cause of electrical defect.

[0031]
FIG. 6 is a view illustrating a diode package 51 of a structure in which the electrode surface and part of the side surfaces of the semiconductor chip 10 are covered with an insulating resin 15. In the constitution of FIG. 6, when, for example, a polyimide resin is used as the insulating resin 15, nickel is used as the bump electrode 13 since the polyimide resin has poor resistance against the migration of copper. Further, the polyimide resin must be cured by baking at a high temperature. In this case, nickel is used as the bump electrode 13, and tin is plated as a metal 14 for suppressing the oxidation of the bump electrode 13. When gold is plated as a metal 14, there takes place mutual diffusion promoting the oxidation of the bump electrode 13. In the case of the semiconductor chip 10 of the lateral structure, the electrode is formed in a region about 5 to 20 μm away from the surface where the bump electrode 13 is formed. To protect the electrode on the side surface of the semiconductor chip 10, therefore, the region about 5 to 20 μm away from the surface of the semiconductor chip may have been covered with the insulating resin 15.

[0032]
FIG. 7 is a view schematically illustrating the constitution of the diode package 50 of the bare chip type, and FIG. 8 is a view schematically illustrating the constitution of the diode package 51 of the type of applying an insulating resin. In the case of the bare chip type shown in FIG. 7, the bump electrode 13a needs be connected to the external substrate 16. In the case of the type of applying the insulating resin shown in FIG. 8, however, the electrode surface and the side surface of the semiconductor chip 10 are covered with the insulating resin 15 and, hence, the bump electrode 13a, too, is covered with the insulating resin 15. Accordingly, the portion 14a for connecting the bump electrode 13a to the external substrate 16 must be exposed.

[0033] Described below are the cases where the diode packages 50 and 51 of the constitutions shown in FIGS. 7 and 8 are joined to the external substrate with the solder.

[0034]
FIG. 9 is a view illustrating a state where the diode package 51 of the type of applying an insulating resin shown in FIG. 8 is joined to the external substrate 16 with the solder, FIG. 10 is a view illustrating the constitution of the junction portion on an enlarged scale, and FIGS. 11A and 11B are diagrams illustrating a maximum main stress building up in the interface A between the semiconductor chip 10 and the bump electrode 13 at the junction portion, and the cumulative probability of breakdown in the interface A, in comparison with the results of the case of the diode package 50 of the bare chip type shown in FIG. 7. FIG. 11A illustrates the results of maximum main stress values in comparison, and FIG. 11B illustrates relationships between the maximum main stress and the cumulative probability of breakdown in comparison. In the case of the small diode 50 of the bare chip type, a maximum main stress is about 130 MPa and the cumulative probability of breakdown is about 50%. In the case of the type of applying the insulating resin, on the other hand, the maximum main stress is about 78 MPa and the cumulative probability of breakdown is not larger than 1%. The above results prove that upon covering the semiconductor chip 10 with the insulating resin 15, stress occurring in the interface between the semiconductor chip 10 and the bump electrode 13 is relaxed into about one-half, and the occurrence of cracks in the semiconductor chip 10 is suppressed to be smaller than {fraction (1/50)} guaranteeing a high degree of reliability.

[0035]
FIG. 12 is a view schematically illustrating the diode package 50 of the bare chip type or the diode package 51 of the type of applying an insulating resin, that is mounted on the external substrate 16. At the time of mounting, the mounting load P acts on the back surface 10a of the semiconductor chip 10, and the bump electrode 13 is pushed onto the external substrate 16. At this moment, the bump electrode 13 produces a reaction R as well as a compressive stress. Further, the semiconductor chip 10 deflects with the bump electrode 13 as a fulcrum, and a tensile stress σ generates on the electrode surface 10b of the semiconductor chip 10.

[0036]
FIG. 13 is a diagram illustrating, in comparison, the results of tensile stress σ in the case of the diode package 50 of the bare chip type and in the case of the diode package 51 of the type of applying an insulating resin. The stress σ increases with an increase in the load P that is exerted on the back surface 10a of the semiconductor chip 10. As compared to the result 32 of the diode package 50 of the bare chip type, the result 33 of the diode package 51 of the type of applying an insulating resin reveals a stress which is decreased by about 50%. It is therefore obvious that a high degree of reliability is maintained if the surfaces of the semiconductor chip 10 are covered with the insulating resin 15.

[0037]
FIGS. 14A to 14E are views illustrating a process for manufacturing the diode package 51 of the type of applying an insulating resin. In FIG. 14A, on the semiconductor wafer 60 are formed a plurality of semiconductor chips 10 each having an anode and a cathode on the surface thereof and bump electrodes 13 for electrically connecting the electrodes to the external substrate 16. The surfaces of the semiconductor chips 10 on the side opposite to the surface of electrodes are secured by using a dicing sheet 19. As for the diode package of, for example, a 0603 size (package length L of about 0.6 mm and a width W of about 0.3 mm), the semiconductor chips 10 are formed in a number of about 40,000 on the 5-inch semiconductor wafer 60. In FIG. 14B, grooves 18 are formed among the semiconductor chips 10 for being filled with an insulating resin 15. The insulating resin 15 filled in the grooves 18 works to insulate and protect the side surfaces of the semiconductor chips 10, and suppresses the peeling of an interface between the insulating resin and the chips during the dicing work. In the case of the semiconductor chip 10 of the lateral structure, the bump electrodes 13 are formed in a region which is deep by about 5 to 20 μm from the surfaces of the electrodes and, hence, the range for insulating and protecting the electrodes on the side surfaces of the semiconductor chip 10 may be about 5 to 20 μm from the chip surface. Therefore, the region of the depth of a minimum of 5 to 20 μm from the chip surface may be covered with the insulating resin 15. In this embodiment, the grooves 18 in the half-dicing have a depth of about 50 μm and a width of about 40 to 60 μm. The width varies in relation to the number of the semiconductor chips 10 obtained from a piece of semiconductor wafer 60.

[0038] Referring to FIG. 14C, the surfaces of the bump electrodes 13 and of the semiconductor chips 10 are covered with the insulating resin 15 for protection, the grooves 18 formed in FIG. 14B above are filled with the insulating resin 15, and the electrode surfaces, too, of the semiconductor chips 10 are covered with the insulating resin 15. There are many methods of applying the insulating resin. According to the spin-coating method which utilizes the rotation of the semiconductor wafer 60, the insulating resin 15 is dropped on nearly the central portion of the semiconductor wafer 60. In the initial stage, the semiconductor wafer 60 is rotated at a relatively low speed so that the grooves 18 formed in FIG. 14B above are filled with the insulating resin 15. At the next step, the rotational speed is increased to adjust the thickness of the insulating resin 10 by utilizing the centrifugal force. In addition to the above method of application, there can be exemplified a vibration system by utilizing vibration of ultrasonic waves or of a low frequency. According to the vibration system, the insulating resin 15 is dropped on nearly the central portion of the semiconductor wafer 60, and vibration of ultrasonic waves or of a low frequency is imparted to the semiconductor wafer 60 in order to fill the grooves 18 formed in FIG. 14B above with the insulating resin 15 and to spread the insulating resin 15 all over the semiconductor wafer 60. There can be further exemplified a method according to which the width of the grooves 18 is expanded by imparting a tensile force to the semiconductor wafer 60 in the two axial directions intersecting each other, the grooves of the expanded width are filled with the insulating resin 15 and the insulating resin 15 is applied onto the predetermined surface of the semiconductor wafer 60, and a method according to which the semiconductor wafer is pushed onto the curved surface of another member to expand the width of the grooves by bending the wafer surface, the groves of the expanded width are filled with the insulating resin 15 and the insulating resin 15 is applied onto the predetermined surface of the semiconductor wafer 60. The method of expanding the width of the grooves is effective when the grooves 18 formed in FIG. 14B has too small widths and cannot be filled with the insulating resin 15 due the viscosity of the insulating resin 15. Further, the grooves 18 may be formed in such a shape that the width is broadened at the opening portions of the grooves for being favorably filled with the insulating resin 15. FIG. 15 illustrates a state of being filled with the insulating resin 15 of when the opening portions of the grooves are broadened, and FIG. 16 illustrates a state of being filled with the insulating resin 15 of when both side surfaces of the grooves are nearly in parallel, and the grooves have nearly equal width on the opening side and on the bottom side. When the grooves have a narrow width or when the insulating resin 15 has a high viscosity, in particular, there tends to occur an insufficiently filled state as shown in FIG. 16. This, however, can be improved by forming the grooves in the shape as shown in FIG. 15. Referring to FIG. 14D, the insulating resin 15 is removed from the connection portions 14a to expose the connection portions 14a for connecting the bump electrodes 13 to the external substrate 16. The insulating resin 15 which is a photosensitive polyimide, can be removed by the treatment of exposure to light and developing. After the removal, the heat treatment is carried out to thermally cure the insulating resin 15 that has been applied to protect the surfaces and the side surfaces of the semiconductor chips 10. The insulating resin 15 which is, for example, the photosensitive polyimide is left to stand in an environment of about 350° C. for about one hour. At this moment, mutual diffusion may take place depending upon the bump electrodes 13 and the kind of the metal plating 14 that is used for preventing the oxidation of the bump electrodes 13. The mutual diffusion takes place conspicuously particularly when the bump electrodes 13 are formed of copper or nickel and when gold is plated as designated at 14 for preventing the bump electrodes 13 from being oxidized. The mutual diffusion can be prevented by, for example, using tin as the metal plating 14.

[0039] Referring to FIG. 14E, the diode package 51 is separated into individual pieces by the cutting among the semiconductor chips through grooves 20 of a width narrower than that of the grooves 18 filled with the insulating resin 15 in FIG. 14C above in a manner that the insulating resin 15 is left on the side surfaces of the semiconductor chips 10 to protect the side surfaces of the semiconductor chips 10, i.e., in a manner that the insulating resin 15 in the grooves 18 is left on the side surfaces of the grooves 18. If the grooves 18 in FIG. 14B have a depth of about 50 μm and a width of about 40 to 60 μm, then, the grooves 20 may have a width of about 20 to 30 μm. If cut at one time, chipping may occur at portions of the semiconductor chip 10 that are not covered with the insulating resin 15. It is therefore desired that the cutting is effected through a plurality of notches. The insulating resin 15 and the semiconductor chip 10 have different degrees of hardness. Therefore, the insulating resin 15 may be cut at a first step and the semiconductor chip 10 may be cut at a second step.

[0040]
FIG. 17 is a side view schematically illustrating the diode package of the type of applying an insulating resin obtained by forming V-shaped grooves in FIG. 14B above, applying the insulating resin 15 in FIG. 14C above and cutting the insulating resin in the grooves in FIG. 14E. FIG. 18 is a side view schematically illustrating the diode package of the type of applying an insulating resin obtained by forming V-shaped grooves and grooves of parallel portions in FIG. 14B above, applying the insulating resin 15 in FIG. 14C above and cutting the insulating resin in the grooves in FIG. 14E above.

[0041]
FIGS. 19A to 19E are views illustrating another manufacturing process according to an embodiment of the invention. This system is a so-called full dicing system. This system does not require the step of removing the insulating resin 15 for exposing the connection portions 14a only for connecting the bump electrodes 13 of FIG. 14D to the external substrate 16. In a diode package 55, further, nearly the whole surfaces of the semiconductor chips 10 (whole surfaces except the portions connecting the bump electrodes 13) are covered with the insulating resin 15. Therefore, the semiconductor chips 10 exhibit high reliability in case unexpected load is exerted thereon.

[0042] In FIG. 19A, on the semiconductor wafer 60 are formed a plurality of semiconductor chips 10 each having an anode and a cathode on the surface thereof and bump electrodes 13 for electrically connecting the electrodes to the external substrate 16. The surfaces (back surfaces) of the semiconductor chips 10 on the side opposite to the surfaces of electrodes are secured by using a first dicing sheet 21. In FIG. 19B, grooves 23 are formed among the semiconductor chips 10 in order to separate the semiconductor chips 10. The semiconductor chips 10 after separated have been secured at their back surfaces by the first dicing sheet 21, and are not scattered. Referring to FIG. 19C, onto the bump electrodes 13 on the surfaces of the semiconductor chip 10 are stuck a second dicing sheet 22 having an adhering force greater than that of the first dicing sheet 21 which is used for securing the semiconductor wafer 60 in FIG. 19B, and the first dicing sheet 21 is removed by being peeled off the back surfaces of the semiconductor chips 10. Thus, the semiconductor chips 10 are transferred from the side of the first dicing sheet 21 onto the side of the second dicing sheet 22. The first dicing sheet 21 needs have an adhering force to such an extent that does not permit the semiconductor chips 10 to move at the time of forming the grooves 23. Referring to FIG. 19D, the surfaces of the semiconductor chips 10, back surfaces thereof (from where the first dicing sheet 21 is peeled off), side surfaces thereof, and the side surfaces of the bump electrodes 13 are covered with the insulating resin 15. Concretely speaking, the grooves 23 formed in FIG. 19B and voids 24 formed by the second dicing sheet 22, by electrode surfaces of the semiconductor chips 10 and by bump electrodes 13, are filled with the insulating resin 15, and the back surfaces of the semiconductor chips 10 (from where the first dicing sheet 21 is peeled off) are covered with the insulating resin 15. The method of application may be, for example, a vibration system which gives vibration of ultrasonic waves or of a low frequency to the semiconductor wafer 60, or a dipping system according to which the insulating resin 15 is introduced into a vessel in advance, and the semiconductor wafer 60 and the second dicing sheet 22 are dipped in the vessel. After applied with the insulating resin 15, the heat treatment is conducted to thermally cure the insulating resin 15. At this moment, the second dicing sheet 22 is in a state of securing the semiconductor chips 10 and the bump electrodes 13, and must have a resistance against high temperatures.

[0043] In FIG. 19E, the insulating resin 15 after thermally set is cut in a state where the insulating resin 15 filled in the grooves 23 is partly left on the side surfaces of the grooves 23 to obtain individually divided semiconductor chips 10. After separated, the second dicing sheet is removed from the side of the end surfaces of the bump electrodes 13.

[0044]
FIG. 20 is a view illustrating the appearance of the diode package 51 of the type of applying the insulating resin. The diode package 51 is mounted with its face down on the external substrate 16.

[0045] The above embodiment is capable of providing a small diode package. Since the insulating resin is provided on the electrode surfaces of the semiconductor chips, stress is relaxed in the interface between the semiconductor chips and the bump electrodes suppressing the occurrence of cracks. It is further allowed to decrease the number of manufacturing steps. Since no wire connection is employed, the connection operation is easy and reliability is improved. The insulating resin is applied in the state of the semiconductor wafer, facilitating the application operation and requiring a decreased period of time. The cost can be decreased, too.

[0046] The inventions described in the claims and illustrated in the above embodiment are (1) a method of manufacturing a semiconductor package by forming grooves among the semiconductor chips, the grooves having a depth of not larger than about 50 μm and a width of from about 40 μm to about 100 μm, (2) a method of manufacturing a semiconductor package by forming grooves among the semiconductor chips, the grooves being tapered in cross section on the opening side and having parallel side surfaces on the bottom side, (3) a method of manufacturing a semiconductor package by applying the insulating resin and filling the grooves with the insulating resin in a state where the width of the grooves is expanded among the semiconductor chips by imparting tensile force to the semiconductor wafer in the two axial directions on the wafer surface in a step of applying the insulating resin for protection, and (4) a method of manufacturing a semiconductor package by applying the insulating resin onto the surface of the semiconductor wafer and filling the grooves with the insulating resin in a state where the semiconductor wafer is pushed onto a curved surface to expand the width of the grooves among the semiconductor chips in a step of applying the insulating resin for protection.

[0047] The above embodiment has dealt with the diode package as a semiconductor package having two electrodes which are the anode and the cathode. Not being limited thereto only, however, the invention may deal with any semiconductor package other than the diode package.

[0048] According to the present invention, there is provided a small diode package suppressing the occurrence of cracks and exhibiting improved reliability. It is further allowed to decrease the number of steps in the manufacturing process, facilitating the operation for connecting the electrodes and for applying the insulating resin. The cost can be decreased, too.

Semiconductor package, manufacturing method of semiconductor package

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CPC

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Priority Claims (1)