Side stacking apparatus and method

Information

  • Patent Grant
  • 8084851
  • Patent Number
    8,084,851
  • Date Filed
    Tuesday, February 23, 2010
    14 years ago
  • Date Issued
    Tuesday, December 27, 2011
    13 years ago
Abstract
A module has at least two ICs connected to each other such that they lie in different planes and are arranged as a first stack of ICs, a third IC is connected to at least one of the at least two ICs, wherein the third IC is off plane from both of the at least two ICs.
Description
BACKGROUND

The present invention relates to semiconductors and, more particularly, to stacking of device-bearing semiconductors.


For some time now, there has been a desire to increase the number of devices that can occupy a particular area on a circuit board in order to reduce the overall circuit board size. One of the ways that entities have approached doing so is by stacking packaged chips on top of one another. This is typically accomplished by use of an ancillary element, for example, a mini “circuit board” or “interposer” that two or more chips can connect to, or through use of flexible circuitry on a ribbon-like material that can wrap over or around one or more chips to affect the same result. These approaches connect to the chips from the top surfaces (i.e., at the points of connection) so the connecting material or interposer is parallel to the chips themselves. These two approaches achieve a smaller footprint, but do so at the expense of, for example added parasitic capacitance, noise or both. Moreover, such elements are always passive elements in that they cannot themselves include integrated circuit devices.


Thus, there is a need in the art for a better way of stacked packaging that does not require the use of such ancillary elements, is not restricted by the geometries and limited connectivity of the above approaches, or both.


SUMMARY

We have devised a way of creating denser packages of stacked integrated circuits (“ICs”) (whether chips or dies) (hereafter “ICs”) that avoids the requirement of using purely passive ancillary elements like mini circuit boards, interposers or flexible circuits.


Advantageously, although the approaches herein avoid the above requirement, they are fully compatible with the techniques described above and thus provide benefits and advantages over and above such techniques, even where an ancillary element approach is used.


One aspect involves a module that has at least two ICs electrically and physically connected to each other such that they lie in different planes and are arranged as a first stack of ICs, a third IC electrically and physically connected to at least one of the at least two ICs, wherein the third IC is off plane from both of the at least two ICs, and at least one electrical connection exists between the third IC and the at least one of the at least two ICs. This electrical connection can be a post an penetration connection or some other form of connection.


The advantages and features described herein are a few of the many advantages and features available from representative embodiments and are presented only to assist in understanding the invention. It should be understood that they are not to be considered limitations on the invention as defined by the claims, or limitations on equivalents to the claims. For instance, some of these advantages are mutually contradictory, in that they cannot be simultaneously present in a single embodiment. Similarly, some advantages are applicable to one aspect of the invention, and inapplicable to others. Thus, this summary of features and advantages should not be considered dispositive in determining equivalence. Additional features and advantages of the invention will become apparent in the following description, from the drawings, and from the claims.





BRIEF DESCRIPTION OF THE DRAWINGS


FIGS. 1 through 4 illustrate, in overly simplified form, a first generic example of the approach;



FIG. 5 illustrates, in overly simplified form, one example of a module where the chips include a mixture of rigid posts and malleable contacts;



FIG. 6 illustrates, in overly simplified form, how one or more of the ICs can include additional features to augment the approach;



FIGS. 7 through 10 illustrate, in overly simplified form, a variant of the approach of FIGS. 1 through 4;



FIG. 11A through 11H illustrate, in simplified form, various IC shapes suitable for use with the approach described herein;



FIG. 12 illustrates, in overly simplified form, a module where the ICs that are bridged to each other have a commonly aligned edge;



FIG. 13 illustrates, in overly simplified form, a module where the ICs that are bridged to each other are offset from each other;



FIGS. 14 through 17 illustrate, in overly simplified form, some example modules employing the approach described herein; and



FIG. 18 and FIG. 19 illustrate, in overly simplified form, how the approach described herein can be used with conventional passive elements.





DETAILED DESCRIPTION

U.S. patent application Ser. Nos. 11,688,088, 11/329,481, 11/329,506, 11/329,539, 11/329,540, 11/329,556, 11/329,557, 11/329,558, 11/329,574, 11/329,575, 11/329,576, 11/329,873, 11/329,874, 11/329,875, 11/329,883, 11/329,885, 11/329,886, 11/329,887, 11/329,952, 11/329,953, 11/329,955, 11/330,011 and 11/422,551, incorporated herein by reference, describe various techniques for forming small, deep vias in, and electrical contacts for, semiconductor wafers. Our techniques allow for via densities and placement that was previously unachievable and can be performed on a chip, die or wafer scale. Moreover, our techniques allow for more flexible approaches stacking of chips to reduce the footprint occupied by chips relative to a simply coplanar arrangement of the same chips.


Specifically, our approach can leverage a solder connection or a post and penetration type connection as well as the various attachment approaches in the above-incorporated applications, like a well or reverse well approach, to facilitate attaching of one element to another element, irrespective of whether each is a chip, die, or passive element such as a re-direction layered (“RDL”) element or even an interposer or flexible circuitry on a ribbon-like material.


Moreover, our approach removes an orientation limit present in the conventional approach of vertically stacking chips in parallel planes. With our approach, the stacking can occur in substantially perpendicular as well as parallel planes.


The approach is described by way of a few examples wherein those examples generically illustrate a much broader scope due to the limitless number of variations that can be created.



FIGS. 1 through 4 illustrate a first generic example of the approach. With this example, a module 100 made up of multiple ICs have been configured to be stacked on each other, for example, in the manner of the aforementioned applications or some other manner. For purposes of illustration, FIG. 1 shows, in overly simplified form, a cross section of four ICs 102, 104, 106, 108 that are both physically and optionally electrically connected to each other in a stack. This can be done using a post and penetration approach, a solder process, an epoxy, spin on glass, photoresist or other adhesive material whether conductive or not. Alternatively, the ICs can be temporarily held in a stacked arrangement (for example, by tooling or even via gravity) with a subsequent process being used to permanently maintain the stacked arrangement through mechanical and/or electrical connection to one or more elements that are connected off plane to the stack. For purposes of illustration most of the IC-to-IC connections are not shown, but should be presumed to exist as required. Such connections could be between the ICs as well as, optionally, on the bottom of the lowest IC 102 and/or the top of the uppermost IC 108. In addition to those connections, some of the ICs include connection points 110, and are shown, that are located near the periphery of the ICs. Depending upon the specific IC, the connection points 110 can be located directly at, for example, a contact pad, or can be located on a connection trace that extends between two or more locations or simply reroutes a connection point to the periphery of the IC. For purposes of illustration, each of these connection points 110 is configured as a malleable contact of a post and penetration connection as described in each of incorporated U.S. patent application Ser. Nos. 11/329,481, 11/329,506, 11/329,539, 11/329,540, 11/329,556, 11/329,557, 11/329,558, 11/329,574, 11/329,575, 11/329,576, 11/329,873, 11/329,874, 11/329,875, 11/329,883, 11/329,885, 11/329,886, 11/329,887, 11/329,952, 11/329,953, 11/329,955, 11/330,011 and 11/422,551, and may also be used to also establish a post and penetration connection with a post 112 of another IC in the stack, such as shown in FIG. 1.



FIG. 2 illustrates, in overly simplified form, a side view of a further IC 200 that is configured to interconnect with the IC stack 100 of FIG. 1. As shown, this IC 200 includes a series of outwardly-extending posts 112 that are configured as rigid contacts and positioned to both align and mate with their respective malleable contacts at the connection points 110. As with the malleable contacts, numerous rigid posts are described in detail in the above-incorporated U.S. patent applications.



FIG. 3 illustrates, in overly simplified form, the stack of ICs 100 of FIG. 1 and the IC 200 of FIG. 2 immediately before joining them together to form a module. As can be seen, the IC 200 is now substantially perpendicular to the stack of ICs 100 and the posts 112 are aligned with their malleable counterparts 302. Note that, advantageously, if a post and penetration-type connection is used, the ICs in the stack 100 and the IC 200 need not be absolutely perpendicular. In fact, the ICs in the stack 100 also need not be in perfect alignment with each other. Instead, the connections can tolerate as much offset as the contact size and post length allows. Thus, as used herein the terms perpendicular and substantially perpendicular should be understood to be identical in meaning and used interchangeably with each other, with the meaning being simply as close to perpendicular as is necessary to effect the desired connections which, as will be understood from one of the examples below, can actually be a substantial deviation from a mathematical definition of perpendicular (i.e., 90°). For convenience, the term “off plane” will sometimes be used herein to generically refer to an IC that is substantially perpendicular to another IC. In addition, the use of a tight-geometry post and penetration, covalent bonding, metal-to-metal fusion or other close-fit connection processes allow the individual ICs 102, 104, 106, 108 to be stacked much closer together and the individual ICs to be thinned very small so that the structure or structural support can be provided by one or more off plane pieces, for example, the IC 200 and the overall height of the stack can be far shorter than if an interposer were used. In fact, through use of the approach described herein two ICs in a stack can be spaced apart from each other by 100 μm or less and an off plane IC can be connected to it and, itself, be spaced from one or both of the ICs by 100 μm or less. For example, with highly thinned ICs and post and penetration connections on the off plane IC on pitches of 25 μm, the height of a stack of four chips could be slightly more than 100 μm. ICs could even be thinned so that an off plane IC with post and penetration connections on a 5 μm pitch would result in a stack that is slightly more than 20 μm high. In contrast, with a traditional interposer, if such interposers were substituted for two of the ICs 104, 108, each of the interposers would likely be 100 μm thick. Thus, the resultant stack involving the interposers would be many times thicker and include half the number of ICs of the stack 100.


The contacts 112 on the IC are then brought into contact forming the connection between the IC 200 and the stack 100. If post and penetration connections are used, then the connections 112 would be posts which connect, under the appropriate pressure, with the corresponding malleable contacts 302 thereby forming the post and penetration connection between the IC 200 and the stack 100, as shown in FIG. 4.


Depending upon the particular implementation, the off plane element can, itself, be an integrated circuit bearing chip (or a portion thereof) or can be a passive element (whether rigid or flexible) or some other element, for example, a packaging element that contains RDLs but no circuitry. Thus, in the examples that follow, although the off plane pieces are described as ICs, it should be understood that the term “ICs” herein are not restricted to integrated circuits but could instead be (and are intended to encompass) any of the above passive elements as well.


At this point it should be appreciated that, with some implementations, the post and penetration connection can optionally be augmented by use of our tack and fuse process, which is described in detail in the above-incorporated U.S. patent applications. With this approach, a tack connection can be used to initially join the chips in a non-permanent connection. At some point thereafter, the chips can undergo a fuse process to make the connections “permanent.” In an alternative optional approach, a fuse process can be used without the tack process, although this will directly make the connections permanent.


Furthermore, with this off plane stacking approach, in some implementation situations, a reflowable material like a solder could be substituted for the malleable material if a barrier is used to confine the molten solder and prevent it from causing an undesirable short with another connection. Depending upon the implementation, this “barrier” approach can involve use of a well, such as described in the above-incorporated applications, or some other physical wall that is part of, applied to or formed on the IC. Alternatively, for example, if the connection components 110, 112 were a pure metal like copper or pure oxide, a metal-to-metal, in this example, copper-to-copper fusion or covalent bonding process, respectively, could be used to similar effect—the former being used if an electrically conductive bond is required. However, since these processes do not have any penetration, they are less amenable to off plane connections where exact connection surfaces of the pieces to be joined deviate from parallel.


Based upon the foregoing, it should now be understood that this approach can occur on more than one side of a chip stack. Thus, it is possible to connect two or more perpendicular chips to a stack, thereby allowing for mixing of different speed technology chips and shortening connections between chips.


Depending upon the particular implementation, it should be understood that the formation of the stack of ICs can occur before, or concurrent with, the attachment of the perpendicular IC. Moreover, it should be understood that, while the above example located all of the malleable contacts in the stack of ICs and the rigid posts on the perpendicular IC for purposes of illustration and simplicity, different implementations can place the malleable or other type of contacts 302 on a perpendicular IC and the posts 112 on the mating ICs. Of course, still other implementations can have any one or more of the ICs each include a mixture of different contact types such as, for example, rigid posts 112 and malleable contacts 302 such as shown in the stack 500 of FIG. 5.


Bearing the above in mind, additional aspects can advantageously be incorporated into the approach. For example, as shown in FIG. 6, one or more of the ICs 602, 604, 606, 608, 610 in a module 600 can include a feature 612 that, depending upon the particular instance, can be formed on the IC or formed separately and attached to the IC. The particular feature can be formed through use of a known etching technique on the IC or formed separately from some other appropriate material, be it a plastic, ceramic, semiconductor, deposited metal or other material. The feature can thus serve as a spacer to maintain or define a minimum separation between the IC and some other IC, act as an alignment element 614 itself or in a mating fashion with another feature 616, or serve some other purpose for the particular application.


Alternatively and/or optionally, a “standoff” can be created directly under a malleable or solder contact to create a minimum and reproducible spacing between adjacent pieces in a stack or between an off plane IC and a stack.



FIGS. 7 through 10 illustrate, in overly simplified form, a variant of the approach of FIGS. 1 through 4 in order to illustrate why “perpendicular,” as that term is used herein includes a substantial deviation from the mathematical definition of perpendicular bearing in mind that the figures contained herein are not to scale and, in fact, the scale is grossly distorted. Nevertheless, this distortion helps to more clearly illustrate the concept.



FIG. 7 illustrates, in overly simplified form, a portion 700 of a stack of ICs 702 having malleable contacts 302 at the periphery in which there is substantial misalignment moving from IC to IC in the stack. However, in this example implementation, the misalignment of the ICs is within the length tolerance of the length of the rigid posts 112 on another IC 710 that that will be joined to the stack 700. As a result, despite the misalignment, an off plane IC such as shown in FIG. 8, can still be attached to the stack of ICs via its posts. FIG. 9 illustrates, in overly simplified form, the intended off plane IC 710 of FIG. 8 and the stack 700 of FIG. 7 immediately before joining them together. FIG. 10 illustrates, in overly simplified form, the module 1000 created after the off plane IC 710 has been brought into alignment and the posts 112 of the off plane IC have penetrated their respective malleable contacts 302 on the IC stack 700 forming an electrical connection among the off plane IC 710 and the IC stack 700. Note here that, in order for this approach to work, if the deviation among the ICs in the stack is not substantial (i.e., within the tolerance of the posts when configured for an aligned stack of ICs), the post can be configured in the manner they would if it was to be joined to an aligned stack. However, if the stack deviates (intentionally or unintentionally) by more than such an amount, the spacing between post may have to be adjusted prior to formation or through rerouting to account for the deviation.


At this point it should be mentioned that, although the above examples have used a single off plane IC, the off plane IC could equally be part of an IC stack itself As a result, it should be appreciated that chip modules can be formed in geometries that go far beyond simple vertical stacking. Moreover, because the above approach provides a way to bring connections closer together by allowing them to reside on different ICs than they otherwise would in a simple coplanar or vertically stacked arrangement, connections can be shortened, different speed ICs can be mixed, and problems like noise and parasitics can be addressed in entirely new ways. Still further, through use of the approach, ICs having shapes (in plan view) other than square or rectangular, such as those representative examples shown in FIG. 11A through 11H, for example, ICs of triangular, other quadrilateral, hexagonal, octagonal, or even irregular shapes can be used, the limiting factor now being the ability to dice those shapes from a wafer or otherwise saw, cut or create them.


Still further, it is to be understood that the off plane IC can be used to bridge ICs so as to provide a more direct connection between them while bypassing one or more ICs that are located in between them. This approach is illustrated, in overly simplified form, in FIG. 12 where the ICs that are bridged to each other 1202, 1204, 1210, 1212 have a commonly aligned edge 1216 and in FIG. 13 where the ICs 1302, 1306, 1308 that are bridged to each other are offset from each other (i.e., their pertinent edges 1312, 1314, 1316, 1318 are not commonly aligned).



FIGS. 14 through 17 illustrate, in overly simplified form, some example modules 1400, 1500, 1600, 1700 employing our approach and the kinds of complex configurations ICs made possible through use of our approach (with the understanding that these examples are purely representative and could never illustrate every possible permutation and combination). As shown in FIGS. 14 through 17, the connections between ICs include one or more of a post and penetration connection, a confined solder connection, a metal-to-metal fusion connection and/or a covalent bonding connection.


For example, as shown in the module 1400FIG. 14, a stack of four ICs 1402, 1404, 1406, 1408 are have an off plane IC 1410 connected to them on the left side and three of the ICs 1404, 1406, 1408 in the stack also have an off plane IC 1412 on their right side. In addition, a further IC 1414 bridges the ICs 1402, 1404, 1406, 1408 in the stack on the front side.


As shown in the module 1500 of FIG. 15, a stack of multiple triangular ICs 1502 (only one of which is visible in this view) each has a stack of three ICs 1504, 1506, 1508 on each of the three side faces of the stack 1502.


As shown in FIG. 16, a more complex module 1600 arrangement has a stack of multiple octagonal ICs 1602 (only one of which is visible in this view) having a stack of three ICs 1604, 1606 on either side, a single IC 1608 on the upper face and a single IC 1610 on the lower face that also bridges the stacks on either side to each other.


As shown in the module 1700 of FIG. 17, a stack of multiple trapezoidal ICs 1702 (only one of which is visible in this view) have an off plane stack of ICs 1704 connected to it on the right side and that stack 1704, in turn, has an off plane IC 1706 on its upper surface. In addition, the trapezoidal stack 1702 has a stack 1708 of varying size ICs on its left side which, in turn has a two IC stack 1710 bridging the lower two ICs 1712, 1714 to the upper two ICs 1716, 1718.


From the modules of FIGS. 14 through 17, it can be seen that any IC can be an off plane IC with respect to a particular stack while also being part of a stack itself and even having an off plane IC connected to it or another one or more ICs in its stack.



FIG. 18 and FIG. 19 illustrate, in overly simplified form, how the approach described herein can be used with conventional passive elements such as an element configured with an RDL as well as interposers or flex circuitry.


As shown in FIG. 18, a module 1800 is made up of complex stack of ICs and also includes a passive element 1802, in this case flex circuitry, that interconnects a connection point 1804 between the middle two ICs 1806, 1808 in the vertical stack with a connection point 1810 of the lower IC 1812 at the rightmost extreme of the module and partially wraps around a portion of the module. In addition, the passive element is configured so that conventional ICs 1814, 1816, 1818 can be connected to it using conventional techniques, such as, for example, the ball grid arrays 1820 on the three chips located above the top of the passive element 1802.


As shown in FIG. 19, a module 1900 is made up of a stack of four vertically stacked ICs 1902, 1904, 1906, 1908. In addition, the module 1900 includes a passive element 1910, in this case an interposer that has rigid posts on one face so that it can form post and penetration interconnections with the stacked ICs 1902, 1904, 1906, 1908 and conventional connections 1912 on its other face where a conventional IC 1914 is connected in a known manner.


Finally, in some implementations, the passive elements 1802, 1910 of FIG. 18 or of FIG. 19 can optionally include, in the case of the passive element 1802 of FIG. 18 a rigid portion, or, in the case of the passive element 1910 of FIG. 19, a flexible portion so that it can be supportive (in the case of the passive element 1802 of FIG. 18) or wrap around more than one side (in the case of the passive element 1910 of FIG. 19) and, optionally, form connections on faces of ICs in addition to on the side of a stack. In such an implementation, the passive element, for example the passive element 1802 of FIG. 18 could include a connection that joins to the stack, by way of example, at the connection point 1822 between the two upper and rightmost chips 1824, 1826 or at another connection point between the two upper leftmost chips 1808, 1830.


It should thus be understood that this description (including the figures) is only representative of some illustrative embodiments. For the convenience of the reader, the above description has focused on a representative sample of all possible embodiments, a sample that teaches the principles of the invention. The description has not attempted to exhaustively enumerate all possible variations. That alternate embodiments may not have been presented for a specific portion of the invention, or that further undescribed alternate embodiments may be available for a portion, is not to be considered a disclaimer of those alternate embodiments. One of ordinary skill will appreciate that many of those undescribed embodiments incorporate the same principles of the invention and others are equivalent.

Claims
  • 1. A module comprising: a first integrated circuit (IC) electrically connected to a second IC by a physical connection located between facing surfaces of the first and second ICs, wherein the facing surfaces of the first and second ICs extend along a first plane; anda third IC electrically connected to the physical connection, wherein the third IC includes a facing surface from which an electrically-conductive element extends, wherein the electrically-conductive element is electrically and physically connected to the physical connection, and wherein the facing surface of the third IC lies in a second plane that is substantially perpendicular to the first plane.
  • 2. The module of claim 1, wherein the physical connection comprises a rigid post penetrated into a malleable material.
  • 3. The module of claim 2, wherein the electrically-conductive element comprises a rigid post, and wherein the third IC is electrically connected to the physical connection by the electrically-conductive element which extends from the third IC into the malleable material.
  • 4. The module of claim 3, wherein the third IC is located adjacent a first edge of the first IC and a first edge of the second IC that is offset from the first edge of the first IC such that the third IC is not exactly perpendicular to the first and second ICs, and wherein the length of the rigid post extending from the third IC is sufficient to compensate for the offset between the first edges of the first and second ICs.
  • 5. The module of claim 1, wherein the physical connection comprises a confined solder connection, a fusion connection, a well-type connection, or a covalent bond connection.
  • 6. The module of claim 1, wherein the third IC comprises a passive element electrically connecting at least one of the first or second ICs to a fourth IC.
  • 7. The module of claim 6, wherein the passive element comprises a flexible portion.
  • 8. The module of claim 7, wherein the passive element further comprises a rigid portion.
  • 9. The module of claim 7, wherein the passive element wraps around at least two sides of at least one of the first or second ICs.
  • 10. The module of claim 1, wherein the first IC comprises a first side surface and the second IC comprises a second side surface that is substantially aligned with the first side surface, and wherein the third IC comprises a facing surface that is substantially perpendicular to and adjacent to the first and second surfaces.
  • 11. The module of claim 1, wherein the third IC is one IC in a stack of additional ICs.
  • 12. The module of claim 1, further comprising a fourth IC electrically connected to the second IC and a fifth IC electrically connected to the fourth IC, wherein the third IC is substantially perpendicular to the fourth and fifth ICs, and wherein the third IC provides a bridge connection between the physical connection located between facing surfaces of the first and second ICs and another physical connection located between facing surfaces of the fourth and fifth ICs.
  • 13. The module of claim 1, further comprising a spacer disposed between the first and second ICs, wherein the spacer is configured to establish a minimum allowable spacing between the first and second ICs.
  • 14. The module of claim 13, wherein the spacer is part of one of the first or second ICs.
  • 15. The module of claim 1, further comprising a contact disposed between the first and second ICs, wherein the contact is configured to establish a minimum allowable spacing between the first and second ICs.
  • 16. A module comprising: a stack of integrated circuits (ICs) including a first IC that is electrically connected to a second IC by a physical connection located between facing surfaces of the first and second ICs; anda third IC including a facing surface from which an electrically-conductive element extends, wherein the facing surface of the third IC is positioned along a lateral surface of the stack, and wherein the third IC is electrically connected by the electrically-conductive element to at least one of the first or second ICs at the physical connection located between the facing surfaces of the first and second ICs.
  • 17. The module of claim 16, wherein the third IC is substantially perpendicular to the first and second ICs.
  • 18. The module of claim 16, wherein the physical connection comprises a rigid post extending into a malleable material.
  • 19. The module of claim 16, wherein the physical connection comprises a confined solder connection, a fusion connection, a well-type connection, or a covalent bond connection.
  • 20. The module of claim 16, wherein the third IC comprises a passive element electrically connecting at least one of the first or second ICs to a fourth IC.
  • 21. The module of claim 20, wherein the passive element comprises a flexible portion and a rigid portion.
  • 22. The module of claim 21, wherein the passive element wraps around at least two sides of the stack of ICs.
  • 23. The module of claim 16, wherein the physical connection comprises a malleable material, and wherein the electrically-conductive element of the third IC extends into the malleable material.
  • 24. The module of claim 16, wherein the lateral surface of the stack comprises a commonly-aligned edge that includes a first side surface of the first IC and a second side surface of the second IC, and wherein the third IC comprises a facing surface that is substantially perpendicular to the commonly-aligned edge.
  • 25. The module of claim 16, wherein the stack of ICs further comprises a fourth IC electrically connected to the second IC and a fifth IC electrically connected to the fourth IC, and wherein the third IC provides a bridge connection between the physical connection located between the first and second ICs and a physical connection located between the fourth and fifth ICs.
  • 26. The module of claim 16, further comprising a spacer disposed between the first and second ICs, wherein the spacer is configured to establish a minimum spacing between the first and second ICs.
  • 27. The module of claim 16, wherein the first and second ICs are misaligned such that a first side surface of the first IC is not commonly-aligned with a second side surface of the second IC, and wherein the first and second side surfaces correspond to the lateral surface of the stack of ICs.
  • 28. A module comprising: a first integrated circuit (IC) electrically and physically coupled to both a second IC and a third IC at a common connection point, wherein the first IC includes a first element extending from a first facing surface, wherein the second IC includes a second element extending from a second facing surface, wherein the third IC includes a third element extending from a third facing surface, wherein the first, second, and third elements are electrically and physically connected at the common connection point, and wherein the third facing surface lies in a plane that is substantially perpendicular to a plane in which the first and second facing surfaces lie.
  • 29. The module of claim 28, wherein the first and second ICs are arranged in a facing relationship and the common connection point is between the first and second ICs.
  • 30. The module of claim 28, wherein the third IC is positioned adjacent lateral edges of the first and second ICs.
  • 31. The module of claim 30, wherein the lateral edges of the first and second ICs are not coplanar and the third IC is arranged at an angle other than 90 degrees with respect to the first and second ICs.
  • 32. The module of claim 28, wherein the common connection point comprises a malleable material and the first and third ICs each include at least one rigid post that penetrates into the malleable material.
  • 33. The module of claim 28, wherein the common connection point comprises a confined solder connection, a fusion connection, a well-type connection, or a covalent bond connection.
  • 34. The module of claim 28, wherein the third IC comprises a passive element electrically connecting at least one of the first or second ICs to a fourth IC.
  • 35. A method comprising: electrically connecting a first integrated circuit (IC) to a second IC via a physical connection located between facing surfaces of the first and second ICs, wherein the facing surfaces of the first and second ICs extend along a first plane; andelectrically connecting a third IC to the physical connection, wherein the third IC includes a facing surface from which an electrically-conductive element extends, wherein the electrically-conductive element is electrically and physically connected to the physical connection, and wherein the facing surface of the third IC lies in a second plane that is substantially perpendicular to the first plane.
  • 36. The method of claim 35, wherein said electrically connecting a third IC to the physical connection comprises inserting the electrically-conductive element into a malleable material.
  • 37. The method of claim 36, wherein the electrically-conductive element comprises a rigid post, and wherein the physical connection between facing surfaces of the first and second ICs comprises the malleable material.
  • 38. The method of claim 35, wherein said electrically connecting a third IC to the physical connection comprises one of a fusion process or a covalent bonding process.
  • 39. The method of claim 35, wherein said electrically connecting a third IC to the physical connection comprises a solder reflow process, and wherein reflowed solder is confined to a well.
  • 40. The method of claim 35, wherein said electrically connecting a third IC to the physical connection comprises electrically connecting at least one of the first or second ICs to a passive element of the third IC, the method further comprising electrically connecting the passive element to a fourth IC such that an electrical connection is formed between the fourth IC and at least one of the first or second ICs.
  • 41. The method of claim 40, wherein the passive element comprises a flexible portion and a rigid portion.
  • 42. The method of claim 35, wherein the first IC comprises a first side surface and the second IC comprises a second side surface that is substantially aligned with the first side surface, the method further comprising positioning the facing surface of the third IC substantially perpendicular to and adjacent to the first and second side surfaces.
  • 43. The method of claim 35, further comprising: electrically connecting a fourth IC to the second IC;electrically connecting a fifth IC to the fourth IC; andproviding an electrical bridge connection between the physical connection located between facing surfaces of the first and second ICs and another physical connection located between facing surfaces of the fourth and fifth ICs.
  • 44. The method of claim 35, further comprising providing a spacer between the first and second ICs, wherein the spacer is configured to establish a minimum allowable spacing between the first and second ICs.
  • 45. The method of claim 44, wherein the spacer is part of one of the first or second ICs.
  • 46. The method of claim 35, wherein a first side surface of the first IC is not commonly-aligned with a second side surface of the second IC such that the third IC is arranged at an angle other than 90 degrees with respect to the first and second ICs.
  • 47. A method comprising: electrically connecting a first integrated circuit (IC) to a second integrated circuit by a physical connection located between facing surfaces of the first and second ICs to form a stack of ICs;positioning a third IC on a lateral surface of the stack of ICs, wherein the third IC includes a facing surface from which an electrically-conductive element extends; andelectrically connecting, via the electrically-conductive element, the third IC to at least one of the first or second ICs at the physical connection located between the facing surfaces of the first and second ICs.
  • 48. The method of claim 47, wherein said electrically connecting the third IC to at least one of the first or second ICs comprises inserting the electrically-conductive element of the third IC into a malleable material of the physical connection.
  • 49. The method of claim 47, wherein said electrically connecting the third IC to at least one of the first or second ICs comprises one of a fusion process, a covalent bonding process, or a solder reflow process.
  • 50. The method of claim 47, wherein the stack of ICs comprises a commonly-aligned edge that includes a first side surface of the first IC and a second side surface of the second IC, the method further comprising positioning the facing surface of the third IC substantially perpendicular to and adjacent to the commonly-aligned edge.
  • 51. The method of claim 47, further comprising: electrically connecting a fourth IC to the second IC;electrically connecting a fifth IC to the fourth IC, wherein the stack of ICs includes the fourth and fifth ICs; andproviding an electrical, bridge connection between the connection point located between the facing surfaces of the first and second ICs and another connection point located between facing surfaces of the fourth and fifth ICs.
CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No. 11/688,088, filed Mar. 19, 2007, which is a Continuation-in-Part of the following patent applications which each claim priority to U.S. Provisional Patent Application No. 60/690,759 (filed Jun. 14, 2005): U.S. patent application Ser. Nos. 11/329,481, 11/329,506, 11/329,539, 11/329,540, 11/329,556, 11/329,557, 11/329,558 (now U.S. Pat. No. 7,560,813), Ser. No. 11/329,574 (now U.S. Pat. No. 7,534,722), Ser. Nos. 11/329,575, 11/329,576, 11/329,873 (now U.S. Pat. No. 7,538,033), Ser. Nos. 11/329,874, 11/329,875, 11/329,883, 11/329,885, 11/329,886 (now U.S. Pat. No. 7,521,806), Ser. No. 11/329,887 (now U.S. Pat. No. 7,215,032), Ser. Nos. 11/329,952, 11/329,953 (now U.S. Pat. No. 7,157,372), Ser. Nos. 11/329,955, 11/330,011 (each filed Jan. 10, 2006) and U.S. patent application Ser. No. 11/422,551 (filed Jun. 6, 2006). Each of the applications listed in this paragraph is incorporated herein by reference as if fully set forth herein.

US Referenced Citations (292)
Number Name Date Kind
3312878 Poch et al. Apr 1967 A
3591839 Evans Jul 1971 A
3720309 Weir Mar 1973 A
4200272 Godding Apr 1980 A
4452557 Bouwknegt et al. Jun 1984 A
4818728 Rai et al. Apr 1989 A
4873205 Critchlow et al. Oct 1989 A
4878611 LoVasco et al. Nov 1989 A
4893174 Yamada et al. Jan 1990 A
4915494 Shipley et al. Apr 1990 A
4967248 Shimizu Oct 1990 A
4999077 Drake et al. Mar 1991 A
5089055 Nakamura Feb 1992 A
5089880 Meyer et al. Feb 1992 A
5090119 Tsuda et al. Feb 1992 A
5100480 Hayafuji Mar 1992 A
5120597 Takimoto et al. Jun 1992 A
5134460 Brady et al. Jul 1992 A
5179043 Weichold et al. Jan 1993 A
5220530 Itoh Jun 1993 A
5229315 Jun et al. Jul 1993 A
5234149 Katz Aug 1993 A
5236854 Higaki Aug 1993 A
5266912 Kledzik Nov 1993 A
5308784 Kim et al. May 1994 A
5399898 Rostoker Mar 1995 A
5427834 Sodetz Jun 1995 A
5468655 Greer Nov 1995 A
5470787 Greer Nov 1995 A
5510655 Tanielian Apr 1996 A
5523628 Williams et al. Jun 1996 A
5561594 Wakefield Oct 1996 A
5563084 Ramm et al. Oct 1996 A
5587119 White Dec 1996 A
5589029 Matsui et al. Dec 1996 A
5598965 Scheu Feb 1997 A
5608264 Gaul Mar 1997 A
5635014 Taylor Jun 1997 A
5708569 Howard et al. Jan 1998 A
5737186 Fuesser et al. Apr 1998 A
5773889 Love et al. Jun 1998 A
5780776 Noda Jul 1998 A
5796591 Dalal et al. Aug 1998 A
5814889 Gaul Sep 1998 A
5846464 Hoffman Dec 1998 A
5872338 Lan et al. Feb 1999 A
5874780 Murakami Feb 1999 A
5897337 Kata et al. Apr 1999 A
5912510 Hwang et al. Jun 1999 A
5929524 Drynan et al. Jul 1999 A
5962922 Wang Oct 1999 A
5963793 Rinne et al. Oct 1999 A
5973396 Farnworth Oct 1999 A
6030894 Hada et al. Feb 2000 A
6037665 Miyazaki Mar 2000 A
6075710 Lau Jun 2000 A
6084301 Chang et al. Jul 2000 A
6087719 Tsunashima Jul 2000 A
6118181 Merchant et al. Sep 2000 A
6133631 Belady Oct 2000 A
6135054 Inoue Oct 2000 A
6135635 Miller et al. Oct 2000 A
6137184 Ikegami Oct 2000 A
6184066 Chino et al. Feb 2001 B1
6188118 Severn Feb 2001 B1
6207475 Lin et al. Mar 2001 B1
6215114 Yagi et al. Apr 2001 B1
6232668 Hikita et al. May 2001 B1
6277711 Wu Aug 2001 B1
6283693 Acello et al. Sep 2001 B1
6297072 Tilmans et al. Oct 2001 B1
6314013 Ahn et al. Nov 2001 B1
6316737 Evans et al. Nov 2001 B1
6316786 Mueller et al. Nov 2001 B1
6326115 Nakanishi et al. Dec 2001 B1
6335571 Capote et al. Jan 2002 B1
6351384 Daikoku et al. Feb 2002 B1
6393638 MacColl May 2002 B1
6395630 Ahn et al. May 2002 B2
6395633 Cheng et al. May 2002 B1
6399426 Capote Jun 2002 B1
6410415 Estes Jun 2002 B1
6410431 Bertin et al. Jun 2002 B2
6429045 Furukawa et al. Aug 2002 B1
6451626 Lin Sep 2002 B1
6484776 Meilunas et al. Nov 2002 B1
6492255 Enomoto et al. Dec 2002 B2
6498089 Komada Dec 2002 B2
6498503 Akram et al. Dec 2002 B2
6501185 Chow Dec 2002 B1
6503779 Miyazaki Jan 2003 B2
6509256 Medlen et al. Jan 2003 B2
6513236 Tsukamoto Feb 2003 B2
6531022 Tsukahara Mar 2003 B1
6544371 Senoo et al. Apr 2003 B2
6551858 Kawata et al. Apr 2003 B2
6555418 Kurosawa et al. Apr 2003 B2
6557192 Zheng May 2003 B2
6559540 Kawashima May 2003 B2
6576830 Nagao et al. Jun 2003 B2
6577013 Glenn et al. Jun 2003 B1
6583517 Jimarez Jun 2003 B1
6586090 Nakagawa et al. Jul 2003 B2
6590278 Behun et al. Jul 2003 B1
6596640 Fishcer et al. Jul 2003 B1
6599778 Pogge et al. Jul 2003 B2
6611057 Mikubo et al. Aug 2003 B2
6617507 Mapes et al. Sep 2003 B2
6617688 Ikegami et al. Sep 2003 B2
6627477 Hakey et al. Sep 2003 B1
6633079 Cheever et al. Oct 2003 B2
6635960 Farrar et al. Oct 2003 B2
6635970 Lasky et al. Oct 2003 B2
6649941 Uemura Nov 2003 B2
6674647 Pierson et al. Jan 2004 B2
6680540 Nakano Jan 2004 B2
6686654 Farrar et al. Feb 2004 B2
6689627 Mottura et al. Feb 2004 B2
6689949 Ortabasi Feb 2004 B2
6703555 Takabayashi et al. Mar 2004 B2
6704953 Fishman Mar 2004 B2
6706554 Ogura Mar 2004 B2
6717045 Chen Apr 2004 B2
6717071 Chang et al. Apr 2004 B2
6720245 Stucchi et al. Apr 2004 B2
6727582 Shibata Apr 2004 B2
6730840 Sasaoka et al. May 2004 B2
6731003 Joshi et al. May 2004 B2
6733685 Beilin et al. May 2004 B2
6740576 Lin et al. May 2004 B1
6756594 George et al. Jun 2004 B2
6756680 Jimarez et al. Jun 2004 B2
6765287 Lin Jul 2004 B1
6768210 Zuniga-Ortiz et al. Jul 2004 B2
6770509 Halope et al. Aug 2004 B2
6770555 Yamazaki Aug 2004 B2
6770822 Pasternak et al. Aug 2004 B2
6780280 Halterbeck et al. Aug 2004 B2
6790663 Kerr et al. Sep 2004 B2
6798030 Izumi et al. Sep 2004 B1
6809020 Sakurai et al. Oct 2004 B2
6815252 Pendse Nov 2004 B2
6818818 Bareis Nov 2004 B2
6824643 Yoshimoto et al. Nov 2004 B2
6838362 Mastromatteo et al. Jan 2005 B2
6841883 Farnworth et al. Jan 2005 B1
6844259 Cheong Jan 2005 B2
6846725 Nagarajan et al. Jan 2005 B2
6861336 Hampton Mar 2005 B1
6869856 Combi et al. Mar 2005 B2
6872635 Hayashi et al. Mar 2005 B2
6881609 Salmon Apr 2005 B2
6889427 Yee et al. May 2005 B2
6903442 Wood et al. Jun 2005 B2
6903443 Farnworth et al. Jun 2005 B2
6909180 Ono et al. Jun 2005 B2
6919642 Hsieh et al. Jul 2005 B2
6920051 Figueroa et al. Jul 2005 B2
6929974 Ding et al. Aug 2005 B2
6938783 Chung Sep 2005 B2
6939789 Huang et al. Sep 2005 B2
6967307 Hembree et al. Nov 2005 B2
6975027 Farrar et al. Dec 2005 B2
6986377 Johnson et al. Jan 2006 B2
6992824 Motamedi et al. Jan 2006 B1
6995469 Hatakeyama Feb 2006 B2
7013509 Hickman Mar 2006 B2
7015590 Jeong et al. Mar 2006 B2
7023347 Arneson et al. Apr 2006 B2
7033859 Pendse Apr 2006 B2
7052941 Lee May 2006 B2
7053456 Matsuo May 2006 B2
7056813 Morrow et al. Jun 2006 B2
7061104 Kenny et al. Jun 2006 B2
7107666 Hiatt et al. Sep 2006 B2
7115505 Hartwell Oct 2006 B2
7115984 Poo et al. Oct 2006 B2
7135777 Bakir et al. Nov 2006 B2
7138706 Arai et al. Nov 2006 B2
7141869 Kim et al. Nov 2006 B2
7144759 Hilton et al. Dec 2006 B1
7145236 Miura et al. Dec 2006 B2
7157310 Benson et al. Jan 2007 B2
7157372 Trezza Jan 2007 B1
7170183 Kim et al. Jan 2007 B1
7193308 Matsui Mar 2007 B2
7218349 Kimura May 2007 B2
7227213 Mastromatteo et al. Jun 2007 B2
7230318 Kripesh et al. Jun 2007 B2
7233028 Weeks et al. Jun 2007 B2
7242099 Lin et al. Jul 2007 B2
7249992 Kalenian et al. Jul 2007 B2
7253519 Huang et al. Aug 2007 B2
7262082 Lin et al. Aug 2007 B1
7264984 Garabedian et al. Sep 2007 B2
7271491 Akram Sep 2007 B1
7276787 Edelstein et al. Oct 2007 B2
7294531 Hwang et al. Nov 2007 B2
7300857 Akram et al. Nov 2007 B2
7300865 Hsieh et al. Nov 2007 B2
7303976 Sand Dec 2007 B2
7326629 Nagarajan et al. Feb 2008 B2
7371676 Hembree May 2008 B2
7384863 Shibata Jun 2008 B2
7390735 Mehrotra Jun 2008 B2
7399652 Sassolini et al. Jul 2008 B2
7456089 Aiba et al. Nov 2008 B2
7456497 Higashi Nov 2008 B2
7479659 Cognetti et al. Jan 2009 B2
7482272 Trezza Jan 2009 B2
7488680 Andry et al. Feb 2009 B2
7495316 Kirby et al. Feb 2009 B2
7528494 Furukawa et al. May 2009 B2
7534722 Trezza May 2009 B2
20010001292 Bertin May 2001 A1
20020004299 Schuele et al. Jan 2002 A1
20020019099 Williams et al. Feb 2002 A1
20020048847 Tsunoi et al. Apr 2002 A1
20020081773 Inoue et al. Jun 2002 A1
20020104873 Lee et al. Aug 2002 A1
20020109236 Kim et al. Aug 2002 A1
20030030367 Mitsutake et al. Feb 2003 A1
20030085471 Iijima et al. May 2003 A1
20030094700 Aiba et al. May 2003 A1
20030145939 Ahn et al. Aug 2003 A1
20030183947 Ohuchi Oct 2003 A1
20030193076 Patti Oct 2003 A1
20030206680 Bakir et al. Nov 2003 A1
20030214036 Sarihan et al. Nov 2003 A1
20030216030 Kim et al. Nov 2003 A1
20030222354 Mastromatteo et al. Dec 2003 A1
20040029304 Naydenkov et al. Feb 2004 A1
20040031973 Cognetti et al. Feb 2004 A1
20040041260 Wood et al. Mar 2004 A1
20040104791 Satoh et al. Jun 2004 A1
20040169275 Danvir et al. Sep 2004 A1
20040177774 Naitoh et al. Sep 2004 A1
20040192029 Hartwell Sep 2004 A1
20040199998 Shinner Oct 2004 A1
20040227256 Seko Nov 2004 A1
20040238115 Matsuno et al. Dec 2004 A1
20050042838 Garyainov et al. Feb 2005 A1
20050046034 Farrar Mar 2005 A1
20050048766 Wu et al. Mar 2005 A1
20050104027 Lazarev May 2005 A1
20050104219 Matsui May 2005 A1
20050163982 Ono et al. Jul 2005 A1
20050167830 Chang et al. Aug 2005 A1
20050184377 Takeuchi et al. Aug 2005 A1
20050230804 Tanida et al. Oct 2005 A1
20050233504 Doi et al. Oct 2005 A1
20050245059 Yuan et al. Nov 2005 A1
20050258526 Noguchi Nov 2005 A1
20050262634 Gottlieb Dec 2005 A1
20050263869 Tanaka et al. Dec 2005 A1
20050266670 Lin et al. Dec 2005 A1
20060001174 Matsui Jan 2006 A1
20060046468 Akram et al. Mar 2006 A1
20060070704 Sinclair et al. Apr 2006 A1
20060073701 Koizumi et al. Apr 2006 A1
20060125084 Fazzio et al. Jun 2006 A1
20060128061 Ravi et al. Jun 2006 A1
20060170089 Mizukoshi Aug 2006 A1
20060208326 Nasiri et al. Sep 2006 A1
20060223301 Vanhaelemeersch et al. Oct 2006 A1
20060252262 Kazemi Nov 2006 A1
20060264029 Heck et al. Nov 2006 A1
20060275946 MacNamara et al. Dec 2006 A1
20060278980 Trezza et al. Dec 2006 A1
20060278988 Trezza Dec 2006 A1
20060278992 Trezza et al. Dec 2006 A1
20060281303 Trezza et al. Dec 2006 A1
20060281363 Trezza Dec 2006 A1
20060289990 Farrar Dec 2006 A1
20060292824 Beyne et al. Dec 2006 A1
20070020926 Kalvesten et al. Jan 2007 A1
20070184653 Blanchard Aug 2007 A1
20070228576 Trezza Oct 2007 A1
20070278641 Trezza Dec 2007 A1
20080003817 Morimoto Jan 2008 A1
20080017407 Kawano Jan 2008 A1
20080111582 Matsui et al. May 2008 A1
20080116567 Amin et al. May 2008 A1
20080203556 Huang Aug 2008 A1
20080213941 Pendse Sep 2008 A1
20080254618 Umemoto et al. Oct 2008 A1
20090149033 Vaartstra et al. Jun 2009 A1
20090181497 Mizukoshi et al. Jul 2009 A1
20090215976 Amoroso et al. Aug 2009 A1
20090267165 Okudo Oct 2009 A1
20090322698 Hirakata et al. Dec 2009 A1
20100117236 Lin et al. May 2010 A1
Foreign Referenced Citations (40)
Number Date Country
0 516 866 Dec 1992 EP
0 620 701 Oct 1994 EP
0 757 386 Feb 1997 EP
1 415 950 May 2004 EP
1 643 819 Apr 2006 EP
61-012047 Jan 1986 JP
63-141356 Jun 1988 JP
01-187948 Jul 1989 JP
03-159152 Jul 1991 JP
05-136143 Jun 1993 JP
05-335313 Dec 1993 JP
06-177135 Jun 1994 JP
07-022461 Jan 1995 JP
08-031835 Feb 1996 JP
10-189661 Jul 1998 JP
10-223832 Aug 1998 JP
2000-114206 Apr 2000 JP
2000-323510 Nov 2000 JP
2000-323645 Nov 2000 JP
2001-129800 May 2001 JP
2001-217381 Aug 2001 JP
2001-223321 Aug 2001 JP
2001-332643 Nov 2001 JP
2002-050721 Feb 2002 JP
2002-164498 Jun 2002 JP
2002-280407 Sep 2002 JP
2003-234367 Aug 2003 JP
2004-071998 Mar 2004 JP
2004-102331 Apr 2004 JP
2004-119773 Apr 2004 JP
2004-214423 Jul 2004 JP
2004-247668 Sep 2004 JP
2004-273596 Sep 2004 JP
2004-281793 Oct 2004 JP
2005-123325 May 2005 JP
2005-277059 Oct 2005 JP
2006-019455 Jan 2006 JP
2006-135277 May 2006 JP
10200651448 May 2006 KR
WO 2004084300 Sep 2004 WO
Related Publications (1)
Number Date Country
20100148343 A1 Jun 2010 US
Provisional Applications (1)
Number Date Country
60690759 Jun 2005 US
Continuations (1)
Number Date Country
Parent 11688088 Mar 2007 US
Child 12710811 US
Continuation in Parts (22)
Number Date Country
Parent 11422551 Jun 2006 US
Child 11688088 US
Parent 11329955 Jan 2006 US
Child 11422551 US
Parent 11329576 Jan 2006 US
Child 11329955 US
Parent 11329539 Jan 2006 US
Child 11329576 US
Parent 11329575 Jan 2006 US
Child 11329539 US
Parent 11329557 Jan 2006 US
Child 11329575 US
Parent 11329875 Jan 2006 US
Child 11329557 US
Parent 11330011 Jan 2006 US
Child 11329875 US
Parent 11329883 Jan 2006 US
Child 11330011 US
Parent 11329574 Jan 2006 US
Child 11329883 US
Parent 11329556 Jan 2006 US
Child 11329574 US
Parent 11329953 Jan 2006 US
Child 11329556 US
Parent 11329886 Jan 2006 US
Child 11329953 US
Parent 11329887 Jan 2006 US
Child 11329886 US
Parent 11329481 Jan 2006 US
Child 11329887 US
Parent 11329874 Jan 2006 US
Child 11329481 US
Parent 11329506 Jan 2006 US
Child 11329874 US
Parent 11329540 Jan 2006 US
Child 11329506 US
Parent 11329558 Jan 2006 US
Child 11329540 US
Parent 11329952 Jan 2006 US
Child 11329558 US
Parent 11329873 Jan 2006 US
Child 11329952 US
Parent 11329885 Jan 2006 US
Child 11329873 US