Thermal interface material with ion scavenger

Information

  • Patent Grant
  • 10428257
  • Patent Number
    10,428,257
  • Date Filed
    Wednesday, October 17, 2018
    6 years ago
  • Date Issued
    Tuesday, October 1, 2019
    5 years ago
Abstract
A thermal interface material includes at least one polymer, at least one thermally conductive filler; and at least one ion scavenger. In some embodiments, the ion scavenger is a complexing agent selected from the group consisting of: nitrogen containing complexing agents, phosphorus containing complexing agents, and hydroxyl carboxylic acid based complexing agents.
Description
FIELD OF THE INVENTION

The present disclosure relates generally to thermal interface materials, and more particularly to thermal interface materials that include an ion scavenger.


DESCRIPTION OF THE RELATED ART

Thermal interface materials (TIMs) are widely used to dissipate heat from electronic components, such as central processing units, video graphics arrays, servers, game consoles, smart phones, LED boards, and the like. Thermal interface materials are typically used to transfer excess heat from the electronic component to a heat spreader, such as a heat sink.


A typical electronics package structure 10 including thermal interface materials is illustrated in FIG. 1. The electronics package structure 10 illustratively includes a heat generating component, such as an electronic chip 12, and one or more heat dissipating components, such as a heat spreader 14, and a heat sink 16. Illustrative heat spreaders 14 and heat sinks comprise a metal, metal alloy, or metal-plated substrate, such as copper, copper alloy, aluminum, aluminum alloy, or nickel-plated copper. TIM materials, such as TIM 18 and TIM 20, provide a thermal connection between the heat generating component and the one or more heat dissipating components. Electronics package structure 10 includes a first TIM 18 connecting the electronic chip 12 and heat spreader 14. TIM 18 is typically referred to as a “TIM 1”. Electronics package structure 10 includes a second TIM 20 connecting the heat spreader 14 and heat sink 16. TIM 18 is typically referred to as a “TIM 2”. In another embodiment, electronics package structure 10 does not include a heat spreader 14, and a TIM (not shown) connects the electronic chip 12 directly to the heat sink 16. Such a TIM connecting the electronic chip 12 directly to the heat sink 16 is typically referred to as a TIM 1.5.


Thermal interface materials include thermal grease, grease-like materials, elastomer tapes, and phase change materials. Traditional thermal interface materials include components such as gap pads and thermal pads.


Exemplary thermal interface materials are disclosed in the following patents and applications, the disclosures of which are hereby incorporated by reference in their entirety: U.S. Pat. Nos. 6,238,596, 6,451,422, 6,605,238, 6,673,434, 6,706,219, 6,797,382, 6,811,725, 7,172,711, 7,244,491, 7,867,609, U.S. 2007/0051773, U.S. 2008/0044670, U.S. 2009/0111925, U.S. 2010/0129648, and U.S. 2011/0308782.


Degradation of thermal interface materials typically occurs through polymer chain scission, such as illustrated in FIG. 2A. As shown in FIG. 2A, the initiation energy produces the initiation reaction RH→R.+H. to form the radical R. This radical combines with an oxygen molecule to form the peroxide radical ROO. The peroxide radical can bond to a proton transferred from another R group to form the peroxide ROOH, as well as a new R. radical, which can combine with a new oxygen molecule. The branching reaction ROOH→RO.+HO. proceeds to form both a RO. radical and a HO. radical. The RO. and HO. are involved in scission of the remaining polymer chain, as well as embrittlement of the thermal interface material through unwanted crosslinking.


In a typical auto-oxidation cycle, the radical initiation reaction speed depends on provision of the initiation energy to produce the R. radical, as well as contaminants in the material. However, both the initiation reaction and the branching reaction are relatively slow due to relatively high activation energies involved in each reaction.


As shown in FIG. 2B, each of the initiation reaction and the branching reaction can be catalyzed by a metal ion. These metal ion catalyzed reactions have relatively low activation energies compared to the uncatalyzed reactions illustrated in FIG. 2A. This results in the generation of more radicals than the uncatalyzed cycle of FIG. 2A, which leads to faster degradation of the thermal interface material.


As illustrated in FIG. 1, at least one surface of a TIM material, such as TIM 18 or TIM 20, may be in direct contact with a metal surface, such as heat spreader 14 or heat sink 16. Such metal surfaces may provide metal ions to catalyze the initiation and branching reactions, such as from metal oxides that may form on the surface. For example, copper ions may interact with a polymer comprising the TIM, particularly in the presence of heat, to form free radicals in the polymer that initiation chain scission that degrades the polymer during service.


Improvements in the foregoing are desired.


SUMMARY OF THE INVENTION

The present disclosure provides thermal interface materials that are useful in transferring heat from heat generating electronic devices, such as computer chips, to heat dissipating structures, such as heat spreaders and heat sinks.


According to an embodiment of the present disclosure, the thermal interface material includes at least one polymer, at least one thermally conductive filler, and at least one ion scavenger.


In a more particular embodiment, the ion scavenger is a complexing agent selected from the group consisting of: nitrogen containing complexing agents, phosphorus containing complexing agents, hydroxyl carboxylic acid based complexing agents, and combinations of the foregoing. In another more particular embodiment, the ion scavenger is selected from the group consisting of: an acid amide compound, a triazole compound, a tetrazole compound, a triazene compound, an oxamide compounds, a malonamide compound, and combinations of the foregoing. In another more particular embodiment, the ion scavenger is an acid amide compound. In another more particular embodiment, the ion scavenger is selected from the group consisting of: decamethylenedicarboxylic acid disalicyloylhydrazide; 3-(N-salicyloyl)amino-1,2,4-triazole; 2′, 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide, and combinations of the foregoing.


In another more particular embodiment, the ion scavenger is a compound according to any of Formula I to Formula XI or combinations thereof:




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In a more particular embodiment of any of the above embodiments, the thermal interface material comprises 0.1 wt. % to 5 wt. % of the ion scavenger, based on the total weight of the thermal interface material. In a more particular embodiment, the thermal interface material comprises 0.5 wt. % to 1 wt. % of the ion scavenger, based on the total weight of the thermal interface material.


In a more particular embodiment of any of the above embodiments, the thermal interface material further comprises at least one phase change material. In an even more particular embodiment, the phase change material is a wax.


In a more particular embodiment of any of the above embodiments, the thermal interface material further comprises at least coupling agent. In an even more particular embodiment, the coupling agent material is selected from the group consisting of: a titanate coupling agent, a zirconate coupling agent, and a silane coupling agent, and combinations of the foregoing. In an even more particular embodiment, the coupling agent is a titanate coupling agent.


In a more particular embodiment of any of the above embodiments, the thermal interface material further comprises at least one crosslinker.


In a more particular embodiment of any of the above embodiments, the thermal interface material comprises: 5 wt. % to 10 wt. % of the at least one polymer; 50 wt. % to 95 wt. % of the at least one thermally conductive filler; and 0.1 wt. % to 5 wt. % of the ion scavenger, based on the total weight of the thermal interface material. In a first even more particular embodiment, the thermal interface material comprises: 2 wt. % to 5 wt. % of at least one wax; 0.1 to 0.5 wt. % of at least one antioxidant; 1 wt. % to 2 wt. % of at least one coupling agent; and 0.5 wt. % to 0.6 wt. % of at least one crosslinker based on the total weight of the thermal interface material; wherein the thermal interface material comprises 75 wt. % to 90 wt. % of the at least one thermally conductive filler, based on the total weight of the thermal interface material. In a second even more particular embodiment, the thermal interface material comprises: 2 wt. % to 5 wt. % of at least one wax; 0.1 to 0.5 wt. % of at least one antioxidant; 1 wt. % to 2 wt. % of at least one coupling agent; and 0.5 wt. % to 0.6 wt. % of at least one crosslinker based on the total weight of the thermal interface material; wherein the thermal interface material comprises 75 wt. % to 90 wt. % of the at least one thermally conductive filler, based on the total weight of the thermal interface material. In an even more particular embodiment, the thermal interface material comprises: 1.5 wt. % to 2 wt. % of at least one wax; 0.1 to 1 wt. % of at least one antioxidant; and 0.5 wt. % to 1 wt. % of at least one coupling agent; wherein the thermal interface material comprises 85 wt. % to 95 wt. % of the at least one thermally conductive filler, based on the total weight of the thermal interface material. In another even more particular embodiment, the thermal interface material further comprises 0.1 wt. % to 1 wt. % of at least one crosslinker.


According to an embodiment of the present disclosure, an electronic components includes a heat sink, an electronic chip, and a thermal interface material having a first surface layer and a second surface layer, the thermal interface material positioned between the heat sink and electronic chip, the thermal interface material including: at least one polymer; at least one thermally conductive filler; and at least one ion scavenger. In some embodiments, the thermal interface material is according to any of the above embodiments. In a first more particular embodiment, the first surface layer is in contact with a surface of the electronic chip and the second surface layer is in contact with the heat sink. In a second more particular embodiment, the electronic component further comprises a heat spreader positioned between the heat sink and the electronic chip, wherein the first surface layer is in contact with a surface of the electronic chip and the second surface layer is in contact with the heat spreader. In a third more particular embodiment, the electronic component further comprises a heat spreader positioned between the heat sink and the electronic chip, wherein the first surface layer is in contact with a surface of the heat spreader and the second surface layer is in contact with the heat sink.





BRIEF DESCRIPTION OF THE DRAWINGS

The above-mentioned and other features and advantages of this disclosure, and the manner of attaining them, will become more apparent and the invention itself will be better understood by reference to the following description of embodiments of the invention taken in conjunction with the accompanying drawings, wherein:



FIG. 1 schematically illustrates a typical electronics package structure;



FIG. 2A illustrates a typical degradation mechanism for a TIM;



FIG. 2B illustrates a metal-catalyzed degradation mechanism; and



FIG. 3 illustrates an exemplary complexing reaction with an ion scavenger.





Corresponding reference characters indicate corresponding parts throughout the several views. The exemplifications set out herein illustrate exemplary embodiments of the invention and such exemplifications are not to be construed as limiting the scope of the invention in any manner.


DETAILED DESCRIPTION

A. Thermal Interface Material


The present invention relates to thermal interface materials (TIMs) useful in transferring heat away from electronic components. In one exemplary embodiment, the TIM comprises a polymer matrix, at least one thermally conductive filler, and at least one ion scavenger.


In some embodiments, the TIM may optionally include one or more of the following components: coupling agent, antioxidant, phase change material, and other additives.


Without wishing to be bound by any theory, it is believed that the addition of an ion scavenger inhibits metal ion-induced free radical formation. The ion scavenger is believed to capture and bind metal ions in a complex such that the metal ions no longer have an empty electron orbit and are effectively disabled from initiation the formation of free radicals in the polymer.


An exemplary complexing reaction is illustrated in FIG. 3. In FIG. 3, the ion scavenger, illustratively a dihydrazide, reacts with a metal ion, illustratively copper oxide. Without wishing to be bound by any particular theory, it is believed that the metal ion is attracted to one or more lone pairs of electrons on the ion scavenger. The attraction between the metal ion and lone pairs of electrons forms a complex, in which the metal ion no longer has an empty electron orbit and does not participate in the metal-catalyzed reactions of FIG. 2B.


As illustrated in the Examples presented below, the inclusion of an ion scavenger in the thermal interface material inhibited degradation of the polymer to a surprising extent.


1. Polymer


The TIM includes a polymer, such as an elastomer. In some embodiments, the polymer comprises a silicone rubber, a siloxane rubber, a siloxane copolymer, or other suitable silicone-containing rubber. In some embodiments, the polymer comprises one or more hydrocarbon rubber compounds, including saturated or unsaturated hydrocarbon rubber compounds.


Exemplary saturated rubbers include ethylene-propylene rubbers (EPR, EPDM), polyethylene/butylene, polyethylene-butylene-styrene, polyethylene-propylene-styrene, hydrogenated polyalkyldiene “mono-ols” (such as hydrogenated polybutadiene mono-ol, hydrogenated polypropadiene mono-ol, hydrogenated polypentadiene mono-ol), hydrogenated polyalkyldiene “diols” (such as hydrogenated polybutadiene diol, hydrogenated polypropadiene diol, hydrogenated polypentadiene diol) and hydrogenated polyisoprene, polyolefin elastomer, and blends thereof. In some embodiments, the polymer is a hydrogenated polybutadiene mono-ol.


Exemplary unsaturated rubbers include polybutadiene, polyisoprene, polystyrene-butadiene and blends thereof, or blends of saturated and unsaturated rubber compounds.


The TIM may comprise the one or more polymers in an amount as little as 1 wt. %, 2 wt. %, 5 wt. %, 6 wt. %, 7 wt. %, 8 wt. %, as great as 10 wt. %, 20 wt. %, 25 wt. %, 50 wt. %, or greater, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.


2. Thermally Conductive Filler


The TIM includes one or more thermally conductive fillers. Exemplary thermally conductive fillers include metals, alloys, nonmetals, metal oxides and ceramics, and combinations thereof. The metals include, but are not limited to, aluminum, copper, silver, zinc, nickel, tin, indium, and lead. The nonmetal include, but are not limited to, carbon, graphite, carbon nanotubes, carbon fibers, graphenes, and silicon nitride. The metal oxide or ceramics include but not limited to alumina, aluminum nitride, boron nitride, zinc oxide, and tin oxide.


The TIM may comprise the one or more thermally conductive fillers in an amount as little as 10 wt. %, 20 wt. %, 25 wt. %, 50 wt. %, as great as 75 wt. %, 80 wt. %, 85 wt. %, 90 wt. %, 95 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.


3. Ion Scavenger


The TIM includes one or more ion scavengers. Exemplary ion scavengers include nitrogen containing complexing agents, phosphorous containing complexing agents, and hydroxyl carboxylic acid based complexing agents. In some exemplary embodiments, the ion scavenger is selected from acid amide compounds, such as hydrazide or dihydrazide. In some exemplary embodiments, the ion scavenger is selected from triazole compounds, tetrazole compounds, triazene compounds, oxamide compounds, or malonamide compounds. In some exemplary embodiments, the ion scavenger is selected from decamethylenedicarboxylic acid disalicyloylhydrazide; 3-(N-salicyloyl)amino-1,2,4-triazole; and 2′, 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide.


In another more particular embodiment, the ion scavenger is a compound according to any of Formula I to Formula XI or combinations thereof:




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The TIM may comprise the one or more ion scavengers in an amount as little as 0.1 wt. %, 0.2 wt. %, 0.5 wt. %, 1 wt. % as great as 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.


4. Coupling Agent


In some exemplary embodiments, the TIM comprises one or more coupling agents. Exemplary coupling agents include organometallic compounds, such as titanate coupling agents or zircontate coupling agents, and organic compounds, such as silane coupling agents. Exemplary coupling agents include titanium IV 2,2 (bis 2-propenolatomethyl)butanolato, tris(dioctyl)pyrophosphato-O; zirconium IV 2,2 (bis 2-propenolatomethyl)butanolato, tris(diisooctyl)pyrophosphato-O; titanium IV 2-propanolato, tris(dioctyl)-pyrophosphato-O) adduct with 1 mole of diisooctyl phosphite; titanium IV bis(dioctyl)pyrophosphato-O, oxoethylenediolato, (Adduct), bis(dioctyl) (hydrogen)phosphite-O; titanium IV bis(dioctyl)pyrophosphato-O, ethylenediolato (adduct), bis(dioctyl)hydrogen phosphite; and zirconium IV 2,2-bis(2-propenolatomethyl) butanolato, cyclo di[2,2-(bis 2-propenolatomethyl) butanolato], pyrophosphato-O,O.


In some exemplary embodiments, the TIM may comprise the one or more coupling agents in an amount as little as 0.1 wt. %, 0.5 wt. %, 0.67 wt. %, 0.75 wt. %, as great as 1 wt. %, 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.


5. Antioxidant


In some exemplary embodiments, the TIM comprises one or more antioxidants. Exemplary antioxidants include phenol type, amine type antioxidants, or any other suitable type of antioxidant, or a combination thereof. The phenol or amine type antioxidant may also be a sterically hindered phenol or amine type antioxidant. Exemplary phenol type antioxidants include octadecyl 3-(3,5-di-(tert)-butyl-4-hydroxyphenyl) propionate. Exemplary amine type antioxidants include 2,6-di-tert-butyl-4-(4,6-bis(octylthio)-1,3,5-triazin-2-ylamino) phenol. Exemplary stearically hindered antioxidants include sterically hindered sulfur containing phenolic antioxidants. Exemplary antioxidants include the Irganox® antioxidants available from BASF.


Although ion scavengers and antioxidants both reduce oxidative degradation of the TIM, ion scavengers are believed to function by capturing and binding metal ions in a complex such that the metal ions no longer have a net charge and are effectively disabled from participating in the metal-catalyzed reactions of FIG. 2B. In contrast, antioxidants are generally believed to function by transferring electrons to an oxidizing agent, such as the radicals of FIG. 2A.


In some exemplary embodiments, the TIM may comprise the one or more antioxidants in an amount as little as 0.05 wt. %, 0.1 wt. %, 0.5 wt. %, 1 wt. % as great as 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.


6. Phase Change Material


In some exemplary embodiments, the TIM comprises one or more phase change materials. A phase change material is a material having a melting point or melting point range at or below the operating temperature of a portion of an electronic device in which the TIM is to be used. An exemplary phase change material is a wax. Other exemplary phase change materials include low melting alloys, such as Wood's metal, Field's metal, or a metal or alloy having a melting point between about 20° C. and 90° C.


In some embodiments, the phase change material has a phase change temperature as low as 20° C., 30° C., 40° C., 45° C. 50° C., as high as 60° C., 70° C., 80° C., 90° C., 100° C., 110° C., or within any range defined between any two of the foregoing values. In some more particular embodiments, the phase change material has a phase change temperature as low as 30° C., 40° C., 45° C. as high as 50° C., 60° C., 70° C., or within any range defined between any two of the foregoing values.


Exemplary waxes include polyethylene (PE) wax, paraffin wax, AC-1702, a polyethylene wax, AC-430, a copolymer of ethylene-vinyl acetate wax, and AC-6702, an oxidized polyethylene wax, each available from Honeywell International Inc., a polyethylene wax blended with polytetrafluoroethylene such as PEW-0602F wax available from Nanjing Tianshi New Material Technologies, TAC wax, available from The International Group, Inc., and RT44HC, available from Hangzhou Ruhr Tech.


The TIM may comprise the one or more phase change materials in an amount as little as 0.5 wt. %, 1 wt. %, 2 wt. %, 3 wt. %, 5 wt. %, 10 wt. %, as great as 20 wt. %, 25 wt. %, 50 wt. %, or greater, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.


7. Other Additives


In some exemplary embodiments, the TIM comprises one or more additional additives. Exemplary additives include crosslinkers, such as alkylated melamine formaldehyde resin, pigments, and solvents, such as iosparaffinic fluids. In some exemplary embodiments, the TIM may comprise the one or more additives in an amount as little as 0.1 wt. %, 0.5 wt. %, 1 wt. % as great as 1.5 wt. %, 2 wt. %, 5 wt. %, 10 wt. %, or within any range defined between any two of the foregoing values, based on the total weight of the TIM.


8. Exemplary Formulations of the Thermal Interface Material


In a first non-limiting illustrative embodiment, the TIM includes about 1 wt. % to about 25 wt. % polymer, about 50 wt. % to about 95 wt. % thermally conductive filler, and about 0.1 wt. % to about 5 wt. % ion scavenger. In a more particular embodiment, the ion scavenger is an acid amide compounds, such as hydrazide or dihydrazide. In an even more particular embodiment, the ion scavenger is selected from decanedicarboxylic acid dietlythyl oyl hydrazide; 3-(N-salicyloyl)amino-1,2,4-triazole; and 2′, 3-bis [[3-[3, 5-di-tert-butyl-4-hydroxyphenyl] propionic]]propionyl hydrazide


In a second illustrative embodiment, which is a more particular embodiment of the first illustrative embodiment, the TIM further includes about 1 wt. % to about 5 wt. % of at least one phase change material.


In a third illustrative embodiment, which is a more particular embodiment of either the first or the second illustrative embodiments, the TIM includes about 0.1 wt. % to about 5 wt. % of at least one crosslinker.


In a fourth illustrative embodiment, which is a more particular embodiment of any of the first to third illustrative embodiments, the TIM includes about 0.1 wt. % to about 5 wt. % of at least one coupling agent.


In a fifth illustrative embodiment, which is a more particular embodiment of any of the first to fourth illustrative embodiments, the TIM includes about 0.1 wt. % to about 5 wt. % of at least one phase change material.


9. Exemplary Properties of the Thermal Interface Material


In some exemplary embodiments, a material thermal interface material including an ion scavenger has a resistance to degradation greater than a similarly formulated thermal interface material not including an ion scavenger. The resistance to degradation may be characterized by an Oxygen Induced Time (OIT) test, such as determined by ASTM D3859-07, the disclosures of which are hereby incorporated by reference in their entirety. Longer OIT times indicate better thermal stability.


In some exemplary embodiments, the OIT of a TIM including an ion scavenger is as little as 20% greater, 25% greater, 30% greater, 50% greater, 75% greater, 100% greater, as great as 150% greater, 200% greater, 300% greater, 375% greater, 400% greater, 500% greater, or more than the OIT of a similarly formulated TIM not including an ion scavenger, or within any range defined between an y two of the foregoing values.


In some exemplary embodiments, the OIT of a TIM including an ion scavenger is as little as 30 minutes, 45 minutes, 60 minutes, as great as 75 minutes, 90 minutes, 120 minutes, 150 minutes, or greater or within any range defined between an y two of the foregoing values.


In some exemplary embodiments, the OIT of a TIM in contact with a metal surface is as little as 15 minutes, 20 minutes, 30 minutes, 45 minutes, as great as 60 minutes, 75 minutes, 90 minutes, 120 minutes, 150 minutes, or greater or within any range defined between any two of the foregoing values.


In some exemplary embodiments, the thermal interface material has a thermal impedance as little as 0.05° C. cm2/W, 0.08° C. cm2/W, 0.09° C. cm2/W, as high as 0.1° C. cm2/W, 0.5° C. cm2/W, 1° C. cm2/W, 2° C. cm2/W, or within any range defined between any two of the foregoing values.


In some exemplary embodiments, the thermal interface material has an unchanged thermal impedance and no visible degradation of the TIM after undergoing a Highly Accelerated Stress Test (HAST) conditioning at a temperature of 120° C., a pressure of 2 atmospheres, and a relative humidity of 85%. The for thermal impedance may be unchanged for as short as 90 hours, 120 hours, 150 hours, as long as 180 hours, 190 hours, 200 hours, or longer, or within any range defined between any two of the foregoing values.


In some exemplary embodiments, the thermal interface material has an unchanged thermal impedance and no visible degradation of the TIM after undergoing a baking test conditioning at a temperature of 150° C. The for thermal impedance may be unchanged for as short as 1000 hours, 1500 hours, 2000 hours, as long as 2200 hours, 2500 hours, 2800 hours, or longer, or within any range defined between any two of the foregoing values.


B. Methods of Forming a Thermal Interface Material


In some exemplary embodiments, the TIM is prepared by combining the individual components in a heated mixer and blending the composition together. The blended composition may then be baked.


In some exemplary embodiments, the TIM is baked at a temperature as low as 25° C., 50° C., 75° C., 80° C., as high as 100° C., 125° C., 150° C., 170° C., or within any range defined between any two of the foregoing values. In some exemplary embodiments, the TIM is baked for as little as 0.5 minutes, 1 minute, 30 minutes, 1 hour, 2 hours, as long as 8 hours, 12 hours, 24 hours, 36, hours, 48 hours, or within any range defined between any two of the foregoing values. An exemplary baking condition is 80° C. for 30 minutes.


C. Applications Utilizing the Thermal Interface Material


Referring again to FIG. 1, in some exemplary embodiments, the thermal interface material including an ion scavenger is positioned as a TIM 1 between an electronic component 12 and a heat spreader 14, as indicated by TIM 18. In some exemplary embodiments, the thermal interface material including an ion scavenger is positioned as a TIM 2 between an a heat spreader 14 and a heat sink 16, as indicated by TIM 20. In some exemplary embodiments, the thermal interface material including an ion scavenger is positioned as a TIM 1.5 (not shown) between an electronic component 12 and a heat sink 16.


EXAMPLES

TIMs were prepared according to the formulations provided in Table 1.









TABLE 1







Formulations (wt. %) for Example 1


and Comparative Examples 1 and 2












Comp.
Comp.



Ex. 1
Ex. 1
Ex. 2














Elastomer
6.22
6.22
6.22


Wax
1.78
1.78
1.78


Total antioxidant
0.5
0.5
0.5


Titanium coupling agent
0.67
0.67
0.67


Aluminum powder thermally conductive filler
90.83
90.83
90.83


Crosslinker
0.6

0.6


Ion scavenger
0.5











To prepare example 1, 6.22 parts (weight) Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.78 parts of a microcrystalline wax with a melting point of about 45° C., 0.5 total parts of an antioxidant mixture were combined and blended in a heated mixer until the combination had melted and had a substantially homogeneous appearance. 0.67 parts Titanium IV 2, 2 (bis 2-propenolatomethyl) butanolato, tris(dioctyl)pyrophosphato-O coupling agent was added, and the combination was blended, again until the combination had a substantially homogeneous appearance. 90.83 parts of Aluminum powder, a thermally conductive filler, was added, and the combination was again blended until it had a substantially homogeneous appearance. Finally 0.6 parts of a Cymel crosslinker resin(alkylated melamine formaldehyde resin) and 0.5 parts of an ion scavenger Songnox® 1024 were added. The final combination had a homogeneous appearance.


To prepare comparative example 1, 6.22 parts Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.78 parts of a microcrystalline wax with a melting point of about 45° C., and 0.50 wt % antioxidant were combined and blended in a heated mixer until the combination had melted and had a substantially homogeneous appearance. 0.67 parts Titanium IV 2, 2 (bis 2-propenolatomethyl) butanolato, tris(dioctyl)pyrophosphato-O was added, and the combination was blended, again until the combination had a substantially homogeneous appearance. 90.83 parts of Aluminum powder was added, and the combination was again blended until it had a substantially homogeneous appearance.


To prepare comparative example 2, 6.22 parts Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.78 parts of a microcrystalline wax with a melting point of about 45° C., and 0.50 wt % antioxidant were combined and blended in a heated mixer until the combination had melted and had a substantially homogeneous appearance. 0.67 parts Titanium IV 2, 2 (bis 2-propenolatomethyl) butanolato, tris(dioctyl)pyrophosphato-O was added, and the combination was blended, again until the combination had a substantially homogeneous appearance. 90.83 parts of Aluminum powder was added, and the combination was again blended until it had a substantially homogeneous appearance. Finally 0.60 parts Cymel resin(alkylated melamine formaldehyde resin) was added. The final combination had a homogeneous appearance.


For each TIM, a Highly Accelerated Stress Test (HAST) was performed. The TIM was taped between liner films at 90° C. for 15 minutes, and cut to a 10 mm square. The liners were removed and the square sample placed between a nickel-coated copper spreader and a silicon die, creating a “test sandwich.” The sample was conditioned at a temperature of a temperature of 130° C., a pressure of 2 atmospheres, and a relative humidity of 85% for 96-192 hours using an environmental chamber supplied by ESPEC. The thermal impedance of the sample was determined before and after the sample conditioning using flash diffusivity of the test sandwich. Flash diffusivity was determined using a Netzsch LFA 447 equipment with a Xenon light source.


The material was periodically checked, and the HAST time was recorded as the final time in which the material met the following criteria: (1) There was no significant visible degradation of the TIM, and no delamination between the TIM and the nickel-coated copper spreader or between the TIM and the silicon die. (2) In addition, the thermal performance did not significantly degrade (testing for thermal performance is further described below). Specifically, the thermal impedance of the test sandwich was the same after HAST testing compared to before (both values were 0.08-0.09° C.cm/W).


For each TIM, a baking test was performed. The TIM was taped between liner films at 90° C. for 15 minutes, and cut to a 10 mm square. The liners were removed and the square sample placed between a nickel-coated copper spreader and a silicon die, creating a “test sandwich.” The sample was subjected to a 150° C. baking oven, for 200 to 3000 hours using an Oven D2F-6050, supplied by Shanghai JINGHONG. The thermal impedance of the sample was determined before and after the sample conditioning using flash diffusivity of the test sandwich. Flash diffusivity was determined using a Netzsch LFA 447 equipment with a Xenon light source.


The material was periodically checked, and the baking time was recorded as the final time in which the material met the following criteria: (1) There was no significant visible degradation of the TIM, and no delamination between the TIM and the nickel-coated copper spreader or between the TIM and the silicon die. (2) In addition, the thermal performance did not significantly degrade (testing for thermal performance is further described below). Specifically, the thermal impedance of the test sandwich was the same after baking test compared to before (both values were 0.08-0.09° C.cm/W).


For each TIM, an Oxygen Induced Time (OIT) test was conducted following by ASTM D3859-07 standard. OIT is a standardized test performed in a DSC (Differential Scanning calorimeter) which measures the level of thermal stabilization of the material tested. Longer time indicates better thermal stability. 10-30 mg mixed samples described above, will go OIT test through DSC Q100, supplied by TA instrument. The test condition is under 50 ml/min O2 flow rate and 210° C. peak temperature (with 20° C./min ramp up).


The OIT, HAST and baking test results are presented in Table 2:









TABLE 2







Performance Test Results











Comp.
Comp.



Performance
Ex. 1
Ex. 2
Ex. 1





Average TI at time zero (° C. ·
0.08-0.09
0.08-0.09
0.08-0.09


cm2/W)


Oxidative Induction Time - 210° C.
35.85
42.15
77.54


(min)


HAST - 130° C., 85% RH, 2 atm
96
192
>192


(hours)


150° C. baking test (hours)
1000
1500
>=2800









As shown in Table 2, Example I had similar initial thermal impedance as Comparative Example I and Comparative Example II, and similar or better performance in the HAST test. In addition, Example I had significantly longer OIT and baking test results times than either Comparative Example I or Comparative Example II.


A second set of TIMs were prepared according to the formulations provided in Table 3.









TABLE 3







Formulations (wt. %) for Examples


2-4 and Comparative Examples 4-5














Comp.


Comp.



Ex. 2
Ex. 3
Ex. 3
Ex. 4
Ex. 4
















PCM45F
100
100





Elastomer


12.5
12.5
12.5


Titanium coupling agent


1.5
1.5
1.5


Aluminum powder thermally


71.66
71.66
71.66


conductive filler


Zinc oxide powder thermally


14.34
14.34
14.34


conductive filler


Ion scavenger
0.6

0.6
1.8










To prepare example 2, 100 parts PCM45F (supplied by Honeywell International, Inc.), a TIM material including a phase change material, and 0.6 parts Songnox® 1024 (supplied by SONGWON) were combined and blended in a heated mixer until the combination had melted and had a substantially homogeneous appearance.


Comparative example 3 was PCM45F without the ion scavenger.


To prepare example 3, 12.5 parts of Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.5 parts of Titanium IV 2-propanolato, tris isooctadecanoato-O, and 0.6 parts ion scavenger Songnox® 1024 were combined and blended until the combination had a substantially homogeneous appearance. 71.66 parts of Aluminum powder, and 14.34 parts of Zinc oxide powder were added, and the combination was again blended until it had a substantially homogeneous appearance.


To prepare example 4, 12.5 parts of Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), 1.5 parts of Titanium IV 2-propanolato, tris isooctadecanoato-O, and 1.8 parts ion scavenger Songnox® 1024 were combined and blended until the combination had a substantially homogeneous appearance. 71.66 parts of Aluminum powder, and 14.34 parts of Zinc oxide powder were added, and the combination was again blended until it had a substantially homogeneous appearance.


To prepare comparative example 4, 12.5 parts of Kraton elastomer (a hydroxyl-terminated ethylene butylene copolymer, specialty mono-ol), and 1.5 parts of Titanium IV 2-propanolato, tris isooctadecanoato-O were combined and blended until the combination had a substantially homogeneous appearance. 71.66 parts of Aluminum powder, and 14.34 parts of Zinc oxide powder were added, and the combination was again blended until it had a substantially homogeneous appearance.


For each TIM, an Oxygen Induced Time (OIT) test was conducted following by ASTM D3859-07 standard as discussed above. OIT test results of above materials are presented in Table 4:









TABLE 4







OIT Test Results










Samples
OIT Result (min)














Ex. 2
57.92



Comp. Ex. 3
24.56



Ex. 3
92.58



Ex. 4
145.50



Comp. Ex. 4
23.28










As shown in Table 4, Example 2 had significantly longer OIT times than Comparative Example 3, and Examples 3 and 4 had significantly longer OIT times than Comparative Example 4. In addition, Example 4, which had twice the ion scavenger as Example 3, had significantly longer OIT times than Example 3.


While this invention has been described as having exemplary designs, the present invention can be further modified within the spirit and scope of this disclosure. This application is therefore intended to cover any variations, uses, or adaptations of the invention using its general principles. Further, this application is intended to cover such departures from the present disclosure as come within known or customary practice in the art to which this invention pertains and which fall within the limits of the appended claims.

Claims
  • 1. An electronic component comprising: a heat sink having a copper surface;an electronic chip;a thermal interface material positioned between the heat sink and electronic chip and including a first surface in direct contact with the copper surface of the heat sink, the thermal interface material including: at least one elastomeric polymer;at least one thermally conductive filler present in a total amount between 75 wt. % and 95 wt. %, based on a total weight of the thermal interface material; andat least one ion scavenger.
  • 2. The electronic component of claim 1, wherein the ion scavenger comprises 2′,3-bis[[3-[3,5-di-tert-butyl-4-hydroxyphenyl]propionic]]propionyl hydrazide in an amount between 0.1 wt. % and 5 wt. %, based on a total weight of the thermal interface material.
  • 3. The electronic component of claim 2, wherein the ion scavenger comprises 2′,3-bis[[3-[3,5-di-tert-butyl-4-hydroxyphenyl]propionic]]propionyl hydrazide in an amount between 0.1 wt. % and 2 wt. %, based on a total weight of the thermal interface material.
  • 4. The electronic component of claim 1, wherein the ion scavenger comprises decamethylenedicarboxylic acid disalicyloylhydrazide in an amount between 0.1 wt. % and 5 wt. %, based on a total weight of the thermal interface material.
  • 5. The electronic component of claim 4, wherein the ion scavenger comprises decamethylenedicarboxylic acid disalicyloylhydrazide in an amount between 0.1 wt. % and 2 wt. %, based on a total weight of the thermal interface material.
  • 6. The electronic component of claim 1, wherein the at least one thermally conductive filler is present in a total amount between 85 wt. % and 95 wt. %, based on a total weight of the thermal interface material.
  • 7. The electronic component of claim 1, wherein the elastomeric polymer is present in an amount between 2 wt. % and 10 wt. %, based on a total weight of the thermal interface material.
  • 8. The electronic component of claim 1, further comprising a phase change material in the form of a wax, the wax present in an amount between 0.5 wt. % and 3 wt. %, based on a total weight of the thermal interface material.
  • 9. The electronic component of claim 1, further comprising a coupling agent present in an amount between 0.1 wt. % and 1.5 wt. %, based on a total weight of the thermal interface material.
  • 10. The electronic component of claim 1, wherein the thermal interface material includes a second surface in direct contact with the electronic chip.
  • 11. An electronic component comprising: a heat sink having a nickel surface;an electronic chip;a thermal interface material positioned between the heat sink and electronic chip and including a first surface in direct contact with the nickel surface of the heat sink, the thermal interface material including: at least one elastomeric polymer;at least one thermally conductive filler present in a total amount between 75 wt. % and 95 wt. %, based on a total weight of the thermal interface material; andat least one ion scavenger.
  • 12. The electronic component of claim 11, wherein the ion scavenger comprises 2′,3-bis[[3-[3,5-di-tert-butyl-4-hydroxyphenyl]propionic]]propionyl hydrazide in an amount between 0.1 wt. % and 5 wt. %, based on a total weight of the thermal interface material.
  • 13. The electronic component of claim 12, wherein the ion scavenger comprises 2′,3-bis[[3-[3,5-di-tert-butyl-4-hydroxyphenyl]propionic]]propionyl hydrazide in an amount between 0.1 wt. % and 2 wt. %, based on a total weight of the thermal interface material.
  • 14. The electronic component of claim 11, wherein the ion scavenger comprises decamethylenedicarboxylic acid disalicyloylhydrazide in an amount between 0.1 wt. % and 5 wt. %, based on a total weight of the thermal interface material.
  • 15. The electronic component of claim 14, wherein the ion scavenger comprises decamethylenedicarboxylic acid disalicyloylhydrazide in an amount between 0.1 wt. % and 2 wt. %, based on a total weight of the thermal interface material.
  • 16. The electronic component of claim 11, wherein the at least one thermally conductive filler is present in a total amount between 85 wt. % and 95 wt. %, based on a total weight of the thermal interface material.
  • 17. The electronic component of claim 11, wherein the elastomeric polymer is present in an amount between 2 wt. % and 10 wt. %, based on a total weight of the thermal interface material.
  • 18. The electronic component of claim 11, further comprising a phase change material in the form of a wax, the wax present in an amount between 0.5 wt. % and 3 wt. %, based on a total weight of the thermal interface material.
  • 19. The electronic component of claim 11, further comprising a coupling agent present in an amount between 0.1 wt. % and 1.5 wt. %, based on a total weight of the thermal interface material.
  • 20. The electronic component of claim 11, wherein the thermal interface material includes a second surface in direct contact with the electronic chip.
CROSS REFERENCE TO RELATED APPLICATIONS

This application is continuation of U.S. patent application Ser. No. 15/322,691, filed Dec. 28, 2016, which is a U.S. national stage application of PCT/CN2014/081724, filed 7 Jul. 2014, published as WO 2016/004565 on 14 Jan. 2016, which are both herein incorporated by reference in their entireties.

US Referenced Citations (218)
Number Name Date Kind
1655133 Clase Jan 1928 A
4180498 Spivack Dec 1979 A
4265026 Meyer May 1981 A
4446266 von Gentzkow et al. May 1984 A
4459185 Obata et al. Jul 1984 A
4565610 Nobel et al. Jan 1986 A
5162555 Remmers et al. Nov 1992 A
5167851 Jamison et al. Dec 1992 A
5562814 Kirby Oct 1996 A
6040362 Mine et al. Mar 2000 A
6096414 Young Aug 2000 A
6238596 Nguyen et al. May 2001 B1
6339120 Misra et al. Jan 2002 B1
6372337 Takahashi et al. Apr 2002 B2
6372997 Hill et al. Apr 2002 B1
6391442 Duvall et al. May 2002 B1
6400565 Shabbir et al. Jun 2002 B1
6432320 Bonsignore et al. Aug 2002 B1
6432497 Bunyan Aug 2002 B2
6451422 Nguyen Sep 2002 B1
6475962 Khatri Nov 2002 B1
6496373 Chung Dec 2002 B1
6500891 Kropp et al. Dec 2002 B1
6562180 Bohin et al. May 2003 B1
6597575 Matayabas et al. Jul 2003 B1
6605238 Nguyen et al. Aug 2003 B2
6610635 Khatri Aug 2003 B2
6616999 Freuler et al. Sep 2003 B1
6617517 Hill et al. Sep 2003 B2
6620515 Feng et al. Sep 2003 B2
6624224 Misra Sep 2003 B1
6649325 Gundale et al. Nov 2003 B1
6657297 Jewram et al. Dec 2003 B1
6673434 Nguyen Jan 2004 B2
6706219 Nguyen Mar 2004 B2
6761928 Hill et al. Jul 2004 B2
6764759 Duvall et al. Jul 2004 B2
6783692 Bhagwagar Aug 2004 B2
6791839 Bhagwagar Sep 2004 B2
6797382 Nguyen et al. Sep 2004 B2
6797758 Misra et al. Sep 2004 B2
6811725 Nguyen et al. Nov 2004 B2
6815486 Bhagwagar et al. Nov 2004 B2
6835453 Greenwood et al. Dec 2004 B2
6838182 Kropp et al. Jan 2005 B2
6874573 Collins et al. Apr 2005 B2
6900163 Khatri May 2005 B2
6908669 Nguyen Jun 2005 B2
6908682 Mistele Jun 2005 B2
6913686 Hilgarth Jul 2005 B2
6926955 Jayaraman et al. Aug 2005 B2
6940721 Hill Sep 2005 B2
6946190 Bunyan Sep 2005 B2
6975944 Zenhausern Dec 2005 B1
6984685 Misra et al. Jan 2006 B2
7013965 Zhong et al. Mar 2006 B2
7056566 Freuler et al. Jun 2006 B2
7074490 Feng et al. Jul 2006 B2
7078109 Hill et al. Jul 2006 B2
7135232 Yamada et al. Nov 2006 B2
7147367 Balian et al. Dec 2006 B2
7172711 Nguyen Feb 2007 B2
7241707 Meagley et al. Jul 2007 B2
7244491 Nguyen Jul 2007 B2
7291396 Huang et al. Nov 2007 B2
7294394 Jayaraman et al. Nov 2007 B2
RE39992 Misra et al. Jan 2008 E
7328547 Mehta et al. Feb 2008 B2
7369411 Hill et al. May 2008 B2
7462294 Kumar et al. Dec 2008 B2
7465605 Raravikar et al. Dec 2008 B2
7550097 Tonapi et al. Jun 2009 B2
7572494 Mehta et al. Aug 2009 B2
7641811 Kumar et al. Jan 2010 B2
7682690 Bunyan et al. Mar 2010 B2
7695817 Lin et al. Apr 2010 B2
7700943 Raravikar et al. Apr 2010 B2
7744991 Fischer et al. Jun 2010 B2
RE41576 Bunyan et al. Aug 2010 E
7816785 Iruvanti et al. Oct 2010 B2
7846778 Rumer et al. Dec 2010 B2
7850870 Ahn et al. Dec 2010 B2
7867609 Nguyen Jan 2011 B2
7955900 Jadhav et al. Jun 2011 B2
7960019 Jayaraman et al. Jun 2011 B2
8039961 Suhir et al. Oct 2011 B2
8076773 Jewram et al. Dec 2011 B2
8081468 Hill et al. Dec 2011 B2
8105504 Gerster et al. Jan 2012 B2
8110919 Jewram et al. Feb 2012 B2
8138239 Prack et al. Mar 2012 B2
8223498 Lima Jul 2012 B2
8308861 Rolland et al. Nov 2012 B2
8324313 Funahashi Dec 2012 B2
8373283 Masuko Feb 2013 B2
8431647 Dumont et al. Apr 2013 B2
8431655 Dershem Apr 2013 B2
8445102 Strader et al. May 2013 B2
8518302 Gerster et al. Aug 2013 B2
8535478 Pouchelon et al. Sep 2013 B2
8535787 Lima Sep 2013 B1
8557896 Jeong Oct 2013 B2
8586650 Zhang et al. Nov 2013 B2
8587945 Hartmann et al. Nov 2013 B1
8618211 Bhagwagar et al. Dec 2013 B2
8632879 Weisenberger Jan 2014 B2
8633478 Cummings et al. Jan 2014 B2
8638001 Kimura Jan 2014 B2
8647752 Strader et al. Feb 2014 B2
8758892 Bergin et al. Jun 2014 B2
8796068 Stender et al. Aug 2014 B2
8837151 Hill et al. Sep 2014 B2
8865800 Stammer et al. Oct 2014 B2
8917510 Boday et al. Dec 2014 B2
8937384 Bao et al. Jan 2015 B2
9055694 Lima Jun 2015 B2
9070660 Lowe et al. Jun 2015 B2
9080000 Ahn et al. Jul 2015 B2
9222735 Hill et al. Dec 2015 B2
9260645 Bruzda Feb 2016 B2
9392730 Hartmann et al. Jul 2016 B2
9481851 Matsumoto et al. Nov 2016 B2
9527988 Habimana et al. Dec 2016 B2
9537095 Stender et al. Jan 2017 B2
9593209 Dent et al. Mar 2017 B2
9593275 Tang et al. Mar 2017 B2
9598575 Bhagwagar et al. Mar 2017 B2
10155894 Liu Dec 2018 B2
20020018885 Takahashi et al. Feb 2002 A1
20020132896 Nguyen Sep 2002 A1
20030112603 Roesner et al. Jun 2003 A1
20030128521 Matayabas et al. Jul 2003 A1
20030151030 Gurin Aug 2003 A1
20030159938 Hradil Aug 2003 A1
20030203181 Ellsworth et al. Oct 2003 A1
20030207064 Bunyan et al. Nov 2003 A1
20030207128 Uchiya et al. Nov 2003 A1
20030230403 Webb Dec 2003 A1
20040069454 Bonsignore et al. Apr 2004 A1
20040097635 Fan et al. May 2004 A1
20040149587 Hradil Aug 2004 A1
20040161571 Duvall et al. Aug 2004 A1
20040206941 Gurin Oct 2004 A1
20050020738 Jackson et al. Jan 2005 A1
20050025984 Odell et al. Feb 2005 A1
20050072334 Czubarow et al. Apr 2005 A1
20050148721 Tonapi et al. Jul 2005 A1
20050228097 Zhong Oct 2005 A1
20050287362 Garcia-Ramirez et al. Dec 2005 A1
20060057364 Nguyen Mar 2006 A1
20060208354 Liu et al. Sep 2006 A1
20060228542 Czubarow Oct 2006 A1
20060260948 Zschintzsch et al. Nov 2006 A2
20060264566 Cassar et al. Nov 2006 A1
20070051773 Ruchert et al. Mar 2007 A1
20070097651 Canale et al. May 2007 A1
20070131913 Cheng et al. Jun 2007 A1
20070161521 Sachdev et al. Jul 2007 A1
20070164424 Dean et al. Jul 2007 A1
20070179232 Collins et al. Aug 2007 A1
20070249753 Lin et al. Oct 2007 A1
20080044670 Nguyen Feb 2008 A1
20080116416 Chacko May 2008 A1
20080141629 Alper et al. Jun 2008 A1
20080149176 Sager Jun 2008 A1
20080291634 Weiser et al. Nov 2008 A1
20080302064 Rauch Dec 2008 A1
20090111925 Burnham et al. Apr 2009 A1
20090184283 Chung et al. Jul 2009 A1
20100048435 Yamagata et al. Feb 2010 A1
20100048438 Carey et al. Feb 2010 A1
20100075135 Kendall et al. Mar 2010 A1
20100129648 Xu et al. May 2010 A1
20100197533 Kendall et al. Aug 2010 A1
20110121435 Mitsukura May 2011 A1
20110141698 Chiou et al. Jun 2011 A1
20110187009 Masuko Aug 2011 A1
20110192564 Mommer et al. Aug 2011 A1
20110204280 Bruzda Aug 2011 A1
20110265979 Chen et al. Nov 2011 A1
20110294958 Ahn et al. Dec 2011 A1
20110308782 Merrill et al. Dec 2011 A1
20120060826 Weisenberger Mar 2012 A1
20120195822 Werner et al. Aug 2012 A1
20120253033 Boucher et al. Oct 2012 A1
20120285673 Cola et al. Nov 2012 A1
20120288725 Tanaka et al. Nov 2012 A1
20130199724 Dershem Aug 2013 A1
20130248163 Bhagwagar et al. Sep 2013 A1
20130265721 Strader et al. Oct 2013 A1
20130288462 Stender et al. Oct 2013 A1
20130299140 Ling et al. Nov 2013 A1
20140190672 Swaroop et al. Jul 2014 A1
20150125646 Tournilhac et al. May 2015 A1
20150138739 Hishiki May 2015 A1
20150158982 Saito Jun 2015 A1
20150183951 Bhagwagar et al. Jul 2015 A1
20150275060 Kuroda et al. Oct 2015 A1
20150279762 Lowe et al. Oct 2015 A1
20160160102 Minegishi Jun 2016 A1
20160160104 Bruzda et al. Jun 2016 A1
20160226114 Hartmann et al. Aug 2016 A1
20160272839 Yamamoto Sep 2016 A1
20170009362 Werner et al. Jan 2017 A1
20170107415 Shiono Apr 2017 A1
20170137685 Liu et al. May 2017 A1
20170167716 Ezaki et al. Jun 2017 A1
20170226396 Yang et al. Aug 2017 A1
20170243849 Sasaki Aug 2017 A1
20170317257 Ezaki et al. Nov 2017 A1
20170321100 Zhang Nov 2017 A1
20180030327 Zhang et al. Feb 2018 A1
20180030328 Zhang et al. Feb 2018 A1
20180085977 Ezaki Mar 2018 A1
20180194982 Ezaki et al. Jul 2018 A1
20180267315 Yonemura Sep 2018 A1
20180358283 Zhang et al. Dec 2018 A1
20190085225 Zhang et al. Mar 2019 A1
Foreign Referenced Citations (102)
Number Date Country
2311067 Jan 2001 CA
1407141 Apr 2003 CN
1456710 Nov 2003 CN
1549875 Nov 2004 CN
1970666 May 2007 CN
101067030 Nov 2007 CN
101090922 Dec 2007 CN
101445627 Jun 2009 CN
101735619 Jun 2010 CN
101835830 Sep 2010 CN
102134474 Jul 2011 CN
102341474 Feb 2012 CN
102627943 Aug 2012 CN
102348763 Apr 2013 CN
103087389 May 2013 CN
103102552 May 2013 CN
103102689 May 2013 CN
103131138 Jun 2013 CN
103214848 Jul 2013 CN
103254647 Aug 2013 CN
103333447 Oct 2013 CN
103409116 Nov 2013 CN
103436027 Dec 2013 CN
103709757 Apr 2014 CN
103756631 Apr 2014 CN
103773322 May 2014 CN
103849356 Jun 2014 CN
103865271 Jun 2014 CN
104098914 Oct 2014 CN
104140678 Nov 2014 CN
104152103 Nov 2014 CN
104449550 Mar 2015 CN
104497574 Apr 2015 CN
104513487 Apr 2015 CN
104804705 Jul 2015 CN
104861661 Aug 2015 CN
105111750 Dec 2015 CN
105349113 Feb 2016 CN
105419339 Mar 2016 CN
105670555 Jun 2016 CN
105838322 Aug 2016 CN
105925243 Sep 2016 CN
105980512 Sep 2016 CN
1224669 Jul 2002 EP
1149519 Nov 2004 EP
1514956 Mar 2005 EP
1629059 Mar 2006 EP
2194165 Jun 2010 EP
2848215 Jun 2004 FR
2508320 May 2014 GB
57027188 Jun 1982 JP
0543116 May 1986 JP
3662715 Jan 1991 JP
02611364 May 1997 JP
2000143808 May 2000 JP
2001139818 May 2001 JP
2002003830 Jan 2002 JP
100479857 Jul 2003 JP
2007002002 Jan 2007 JP
4016326 Dec 2007 JP
2008063412 Mar 2008 JP
5269366 Mar 2009 JP
2009102577 May 2009 JP
5137538 Jun 2009 JP
2009138036 Jun 2009 JP
4288469 Jul 2009 JP
5607298 Mar 2010 JP
5390202 Aug 2010 JP
2010248277 Nov 2010 JP
2010278115 Dec 2010 JP
5318733 Jun 2011 JP
2011165792 Aug 2011 JP
5687167 Apr 2013 JP
5463116 Apr 2014 JP
5944306 Jul 2014 JP
5372270 Sep 2014 JP
2014194006 Oct 2014 JP
20070116654 Dec 2007 KR
201527309 Jul 2015 TW
1997026297 Jul 1997 WO
WO0120618 Mar 2001 WO
03052818 Jun 2003 WO
2003064148 Aug 2003 WO
2004008497 Jan 2004 WO
2004022330 Mar 2004 WO
2005021257 Mar 2005 WO
200511146 Nov 2005 WO
2005119771 Dec 2005 WO
2006023860 Mar 2006 WO
2007027670 Mar 2007 WO
2008014171 Jan 2008 WO
2008103219 Aug 2008 WO
2008121491 Oct 2008 WO
2008121970 Oct 2008 WO
2009032212 Mar 2009 WO
2013191116 Dec 2013 WO
2014007119 Jan 2014 WO
2014160067 Oct 2014 WO
2015179056 Nov 2015 WO
2016004565 Jan 2016 WO
2016103424 Jun 2016 WO
2018068222 Apr 2018 WO
Non-Patent Literature Citations (31)
Entry
“Dynasylan 1146: Oligomeric Diamino-Silane-System” Evonik Industries, pp. 1-3, 2008.
“Hi-Flow 225F-AC Reinforced, Phase Change Thermal Interface Material,” The Bergquist Company, 1 page, available at least as early as Aug. 31, 2017.
“Semicosil 9212A” Wacker Silicones Material Safety Data Sheet, pp. 1-8, printed Dec. 11, 2009.
“Semicosil 9212B” Wacker Silicones Material Safety Data Sheet, pp. 1-8, printed Dec. 11, 2009.
“THERM-A-GAP HCS10,569,570,579 and 580 Thermally Conductive Gap Filler Pads,” Parker Chomerics, Engineering Your Success, pp. 11-12, available at least as early as the filing date of the present application.
Aranzabe, Estibaliz, et al. “More than Color: Pigments with Thermal Storage Capacity; Processing and Degradation Behavior.” Advances in Materials Physics and Chemistry, 5:171-184, 2015.
Extended European Search Report issued in EP Application No. 14897036.1, dated Jul. 2, 2018, 7 pages.
Extended Search Report issued in EP Application 14907530.1, dated Jun. 27, 2018, 9 pages.
Fink, Johannes Karl. “Chapter 18: Metal Deactivators.” in: A Concise Introduction to Additives for Thermoplastic Polymers, Wiley-Scrivener, pp. 165-171, Jan. 1, 2010.
Gowda, Arun, et al. “Choosing the Right Thermal Interface Material.” Solid State Technology, Insights for Electronics Manufacturing, Online Blog, 9 pages, 2005. Retrieved May 25, 2017 from the Internet <http://electroiq.com/blog/2005/03/choosing-the-right-thermal-interface-material/.
International Search Report and Written Opinion issued in PCT/CN2014/081724, dated Apr. 1, 2015, 12 pages.
International Search Report and Written Opinion issued in PCT/CN2014/093138, dated Sep. 6, 2015, 8 pages.
International Search Report and Written Opinion issued in PCT/CN2016/101874, dated Apr. 28, 2017, 12 pages.
International Search Report and Written Opinion issued in PCT/US2014/068033, dated Mar. 26, 2015, 12 pages.
International Search Report and Written Opinion issued in PCT/US2017/041498, dated Oct. 20, 2017, 10 pages.
Martyak et al., On the oxidation of tin(II) in methanesulfonate solutions and the role of sulfate, Galvanotechnik (2005), 96(3), 594-601 (Abstract).
Ping, Ding, et al. “Preparation and Application Research of Novel Silicone Gel for High-Power IGBT.” Insulating Materials, 47(2):52-55, Chinese text with English translation of Abstract, 2014.
Ramaswamy, C., et al. “Phase Change Materials as a Viable Thermal Interface Material for High-Power Electronic Applications.” The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, IEEE, 2:687-691, 2004.
Search Report issued in CN application 201480066502.2, dated May 18, 2017, 2 pages.
Singaporean Search Report and Written Opinion issued in SG Application No. 11201704238Y, completed May 18, 2018, 9 pages.
Dow Corning® Two-Part RTV Silicone Sealant: Total Assembly Solutions for Home Appliance Production; www.dowcorning.com; Form No. 80-3375-01; 6 pages.
Evonik, Silanes for Adhesives and Sealants, 2013, p. 1-24.
Extended European Search Report issued in EP Application 14867847.7, dated Jun. 26, 2017, 7 pages.
International Preliminary Report on Patentability issued in PCT/CN2016/075827, dated Sep. 20, 2018, 5 pages.
International Search Report and Written Opinion issued in PCT/CN2016/075827, dated Dec. 1, 2016, 7 pages.
International Search Report and Written Opinion issued in PCT/US2018/049218, dated Dec. 28, 2018, 13 pages.
Singaporean Written Opinion issued in SG Application No. 11201704238Y, completed Feb. 7, 2019, 7 pages.
Wacker Silicones, Catalyst EP/Inhibitor PT 88 product data sheet, p. 1-3, Oct. 6, 2008.
Yasuhiro Aoyagi et al., “Effects of antioxidants and the solild component on the thermal stability of polyol-ester-based thermal pastes”, J Mater Sci (2007) 42:2358-2375; Mar. 12, 2007.
Yasuhiro Aoyagi et al., “Polyol-Based Phase-Change Thermal Interface Materials”, Journal of Electronic Materials, vol. 35, No. 3, (2006); pp. 416-424.
Yunsheng Xu et al., “Lithium Doped Polyethylene-Glycol-Based Thermal Interface Pastes for High Thermal Contact conductance”, Transactions of the ASME; Journal of Electronic Packagiing, vol. 124, Sep. 2002; pp. 188-191.
Related Publications (1)
Number Date Country
20190048245 A1 Feb 2019 US
Continuations (1)
Number Date Country
Parent 15322691 US
Child 16163255 US