This application claims the benefit of Taiwan application Serial No. 96139548, filed Oct, 22, 2007, the subject matter of which is incorporated herein by reference.
1. Field of the Invention
The invention relates in general to a package structure and a method of manufacturing the same, and more particularly to a chip package structure and a method of manufacturing the same.
2. Description of the Related Art
In recent years, electronic devices have been widely used in people's everyday life, and the manufacturers are dedicated to the development of miniaturized and multi-function electronic products to meet the market demands. Among the package structures used in the semiconductor components of electronic products, the wafer level chip scale package (WLCSP) is the most commonly used package structure.
Referring to
Due to the restriction on the shape of the internal wires 70, a thickness H30 of the sealant 30 is far larger than a thickness H50 of the chip 50, hence increasing the volume of the package portion 10 and restricting the miniaturization of electronic devices. In order to provide multiple functions, a multi-function electronic device must integrate a plurality of chips within. Thus, how to provide a package portion with increased packaging density and a method of manufacturing the same has become an important direction of the research and development in the semiconductor industry.
The invention is directed to a chip package structure and a method of manufacturing the same. By using the design of each internal conductor and corresponding external conductors, the thickness of the sealant required by the package portion is reduced so that the density of the package structure is increased.
According to a first aspect of the present invention, a chip package structure including a package portion and a plurality of external conductors is provided. The package portion includes a distribution layer, a chip, a plurality internal conductors and a sealant. The distribution layer has a first surface and a second surface, and the chip is disposed on the first surface. Each internal conductor has a first terminal and a second terminal. The first terminal is disposed on the first surface. The sealant is disposed on the first surface for covering the chip and partly encapsulating the internal conductors, so that the first terminal and the second terminal of each internal conductor are exposed from the sealant. The external conductors disposed on the second surface of the distribution layer of the package portion are electrically connected to the internal conductors.
According to a second aspect of the present invention, a method of manufacturing chip package structure is provided. The manufacturing method includes the following steps: Firstly, a carrier having an adhering layer is provided. Next, a plurality internal conductors and at least one chip are disposed on the adhering layer, wherein each internal conductor has a first terminal and a second terminal, and the first terminal is disposed on the adhering layer. Then, a sealant is formed on the adhering layer to cover the chip and the internal conductors. Afterwards, the adhering layer is removed to expose the first terminal of each internal conductor, an active surface of the chip and a bottom surface of the sealant. In addition, a distribution layer is formed on the bottom surface of the sealant, so that the first terminal of each internal conductor and the active surface of the chip are disposed on a first surface of the distribution layer and electrically connected to the distribution layer to form a package portion, wherein the package portion includes the chip, the internal conductors corresponding to the chip, the distribution layer, and the sealant. Lastly, a plurality of external conductors is disposed on a second surface of the distribution layer.
The invention will become apparent from the following detailed description of the preferred but non-limiting embodiments. The following description is made with reference to the accompanying drawings.
Referring to
The distribution layer 110 has a first surface 111 and a second surface 113. The chip 150 is disposed on the first surface 111 of the distribution layer 110. The internal conductors 170 has a first terminal 171 and a second terminal 273, wherein the first terminal 171 is disposed on the first surface 111 of the distribution layer 110. The sealant 190 is disposed on the first surface 111 of the distribution layer 110 for covering the chip 150 and partly encapsulating the internal conductors 170, so that the first terminal 171 and the second terminal 273 of each internal conductor 170 are exposed from the sealant 190. The first external conductors 130 disposed on the second surface 113 of the distribution layer 110 of the first package portion 100 are electrically connected to the internal conductors 170.
The first package portion 100 further includes another distribution layer 210 disposed on the sealant 190 for covering the second terminal 273 of each internal conductor 170. With the disposition of the internal conductors 170 whose thickness is slightly larger than the thickness of chip 150, the required thickness of the sealant 190 is reduced so that the volume of the first package portion 100 is decreased accordingly.
Referring to
The method begins at step 401 as indicated in
Next, the method proceeds to step 402 as indicated in
Then, the method proceeds to step 403 as indicated in
Then, the method proceeds to step 404 as indicated in
Then, the method proceeds to step 405 as indicated in
Afterwards, the method proceeds to step 406 as indicated in
Next, the method proceeds to step 407 as indicted in
Next, the method proceeds to step 408 as indicted in
The distribution layer 110 includes an under bump metallurgy (UBM) 110a, a re-distribution layer (RDL) 110b and a polymer layer 110c. The UBM 110a contacts and makes the internal conductors 170 electrically connected to the re-distribution layer 110b. The internal conductors 170 are electrically connected to the chips 150 and 151 via the re-distribution layer 110b. The polymer layer 110c is used for electrical isolation purpose to avoid circuiting. The re-distribution layer 110b can be formed by way of sputtering, and the polymer layer 110c can be pasted on the re-distribution layer 110b.
Then, the method proceeds to step 409 as indicated in
Then, the method proceeds to step 410 as indicated in
Then, the method proceeds to step 411 as indicated in
For the chip package structure which is manufactured according to the above method, the chips 150 and 151 corresponding to the first package portions 100 and 100′ are electrically connected to the active surface 150′ via the internal conductors 170 and the distribution layer 110, and each of the chips 150 and 151 has an external conductor 130 and can be disposed on other electronic components.
Further, the chip package structure of the invention can be formed by stacking a plurality of package portions. The stacked package portions can have the same or different structures.
Referring to
Referring to
The chip package structure exemplified in the present embodiment of the invention can be used in a 3 dimensional fan-out wafer level chip scale package (WLCSP). The internal conductors 170, the first external conductors 130 and the second external conductors 330 can be a plurality of solder balls. There is no restriction about the shape and the size of the internal conductors 170, and the thickness of each internal conductor 170 encapsulated by the sealant 190 is preferably slightly larger than the thickness H150 of the chip 150. With the disposition of the internal conductors 170, the first package portion 100 can reduce the required thickness of the sealant 190 and decrease the volume of the first package portion 100. When the chip package structure is formed by stacking different package portions, the second package portion 300 is formed on the sealant 190 via the distribution layer 210 of the first package portion 100 for electrically connecting the two package portions. Thus, the second external conductors 330 do not need to correspond to the internal conductors 170, and the second package portion 300 can have any size or shape, hence increasing the adaptability of the chip package structure.
Referring to
As indicated in
As indicated in
Next, as indicated in
Then, as indicated in
Afterwards, as indicated in
Then, as indicated in
Next, as indicated in
After that, as indicated in
Then, as indicated in
Afterwards, as indicated in
Then, as indicated in
Next, as indicated in
For the chip package structure disclosed in the present embodiment of the invention, the second terminal 773 of each internal conductor 770 is embedded into the adhering layer 727. After the adhering layer 727 is removed, the first terminal 771 and the second terminal 773 of each internal conductor 770 are exposed from the sealant 790. Thus, the chip package structure can form the distribution layers 710 and 715 without going through the grinding process, hence saving the grinding material and simplifying the method of manufacturing the chip package structure.
Despite the method of manufacturing the chip package structure is exemplified by forming two package portions at a time, anyone who is skilled in the technology of the invention will understand that the quantity of package portions is not for limiting the scope of protection of the invention. The manufacturing method of the invention can form one package portion, three package portions, ten package portions or even more package portions.
According to the chip package structure and the method of manufacturing the same disclosed in the above embodiments of the invention, the required thickness of package portions is reduced, and the package portions of different types can be stacked via the distribution layer. Thus, the volume of the chip package structure of the invention is five to six times smaller than that of multi-chip module (MCM) package structure. The chip package structure disclosed in the preferred embodiments of the invention can be used in flash random-access memory (RAM), static random-access memory (SRAM), dynamic random-access memory (DRAM), processor, application specific integrated circuit (ASIC) or controller. In addition, each package portion can be inspected before stacking so that the properties of each package portion can be inspected earlier.
While the invention has been described by way of example and in terms of a preferred embodiment, it is to be understood that the invention is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures.
Number | Date | Country | Kind |
---|---|---|---|
96139548 A | Oct 2007 | TW | national |
Number | Name | Date | Kind |
---|---|---|---|
3959874 | Coucoulas | Jun 1976 | A |
4246595 | Noyori et al. | Jan 1981 | A |
4630096 | Drye et al. | Dec 1986 | A |
4783695 | Eichelberger et al. | Nov 1988 | A |
4827328 | Ozawa et al. | May 1989 | A |
4860166 | Nicholls | Aug 1989 | A |
4907062 | Fukushima | Mar 1990 | A |
5019535 | Wojnarowski et al. | May 1991 | A |
5049980 | Saito et al. | Sep 1991 | A |
5091769 | Eichelberger | Feb 1992 | A |
5111278 | Eichelberger | May 1992 | A |
5120678 | Moore et al. | Jun 1992 | A |
5149662 | Eichelberger | Sep 1992 | A |
5151776 | Wojnarowski et al. | Sep 1992 | A |
5157589 | Cole, Jr. et al. | Oct 1992 | A |
5225023 | Wojnarowski et al. | Jul 1993 | A |
5241456 | Marcinkiewicz et al. | Aug 1993 | A |
5250843 | Eichelberger | Oct 1993 | A |
5315486 | Fillion et al. | May 1994 | A |
5324687 | Wojnarowski | Jun 1994 | A |
5353195 | Fillion et al. | Oct 1994 | A |
5353498 | Fillion et al. | Oct 1994 | A |
5422513 | Marcinkiewicz et al. | Jun 1995 | A |
5432677 | Mowatt et al. | Jul 1995 | A |
5519936 | Andros et al. | May 1996 | A |
5527741 | Cole et al. | Jun 1996 | A |
5546654 | Wojnarowski et al. | Aug 1996 | A |
5554887 | Sawai et al. | Sep 1996 | A |
5567656 | Chun | Oct 1996 | A |
5592025 | Clark et al. | Jan 1997 | A |
5600181 | Scott et al. | Feb 1997 | A |
5703400 | Wojnarowski et al. | Dec 1997 | A |
5710062 | Sawai et al. | Jan 1998 | A |
5745984 | Cole, Jr. et al. | May 1998 | A |
5834340 | Sawai et al. | Nov 1998 | A |
5841193 | Eichelberger | Nov 1998 | A |
5856705 | Ting | Jan 1999 | A |
5866952 | Wojnarowski et al. | Feb 1999 | A |
5874784 | Aoki et al. | Feb 1999 | A |
5990546 | Igarashi et al. | Nov 1999 | A |
5994773 | Hirakawa | Nov 1999 | A |
6013953 | Nishihara | Jan 2000 | A |
6025995 | Marcinkiewicz | Feb 2000 | A |
6046071 | Sawai et al. | Apr 2000 | A |
6060775 | Ano | May 2000 | A |
6080932 | Smith et al. | Jun 2000 | A |
6087717 | Ano et al. | Jul 2000 | A |
6150767 | Huang | Nov 2000 | A |
6154366 | Ma et al. | Nov 2000 | A |
6159767 | Eichelberger | Dec 2000 | A |
6198165 | Yamaji et al. | Mar 2001 | B1 |
6232151 | Ozmat et al. | May 2001 | B1 |
6232661 | Amagai et al. | May 2001 | B1 |
6239482 | Fillion et al. | May 2001 | B1 |
6265765 | DiStefano et al. | Jul 2001 | B1 |
6271469 | Ma et al. | Aug 2001 | B1 |
6294741 | Cole, Jr. et al. | Sep 2001 | B1 |
6306680 | Fillion et al. | Oct 2001 | B1 |
6323045 | Cline et al. | Nov 2001 | B1 |
6331451 | Fusaro et al. | Dec 2001 | B1 |
6358780 | Smith et al. | Mar 2002 | B1 |
6377461 | Ozmat et al. | Apr 2002 | B1 |
6396148 | Eichelberger et al. | May 2002 | B1 |
6423566 | Feger et al. | Jul 2002 | B1 |
6423570 | Ma et al. | Jul 2002 | B1 |
6426545 | Eichelberger et al. | Jul 2002 | B1 |
6486005 | Kim | Nov 2002 | B1 |
6486006 | Hirano et al. | Nov 2002 | B2 |
6486545 | Glenn et al. | Nov 2002 | B1 |
6552430 | Perez et al. | Apr 2003 | B1 |
6555906 | Wermer et al. | Apr 2003 | B2 |
6555908 | Eichelberger | Apr 2003 | B1 |
6560109 | Yamaguchi et al. | May 2003 | B2 |
6580159 | Rodriguez et al. | Jun 2003 | B1 |
6586276 | Towle et al. | Jul 2003 | B2 |
6586822 | Vu et al. | Jul 2003 | B1 |
6590291 | Akagawa | Jul 2003 | B2 |
6590295 | Liao et al. | Jul 2003 | B1 |
6639324 | Chien | Oct 2003 | B1 |
6646354 | Cobbley et al. | Nov 2003 | B2 |
6656827 | Tsao et al. | Dec 2003 | B1 |
6663943 | Kadota | Dec 2003 | B2 |
6680529 | Chen et al. | Jan 2004 | B2 |
6701614 | Ding et al. | Mar 2004 | B2 |
6706554 | Ogura | Mar 2004 | B2 |
6707137 | Kim | Mar 2004 | B2 |
6709896 | Cobbley et al. | Mar 2004 | B1 |
6709898 | Ma et al. | Mar 2004 | B1 |
6713859 | Ma | Mar 2004 | B1 |
6717061 | Yamaguchi et al. | Apr 2004 | B2 |
6724638 | Inagaki et al. | Apr 2004 | B1 |
6734370 | Yamaguchi et al. | May 2004 | B2 |
6734534 | Vu et al. | May 2004 | B1 |
6734696 | Horner et al. | May 2004 | B2 |
6747348 | Jeung et al. | Jun 2004 | B2 |
6750547 | Jeung et al. | Jun 2004 | B2 |
6756671 | Lee et al. | Jun 2004 | B2 |
6787894 | Jeung et al. | Sep 2004 | B2 |
6790706 | Jeung et al. | Sep 2004 | B2 |
6818544 | Eichelberger et al. | Nov 2004 | B2 |
6838776 | Leal et al. | Jan 2005 | B2 |
6845554 | Frankowsky et al. | Jan 2005 | B2 |
6894399 | Vu et al. | May 2005 | B2 |
6902950 | Ma et al. | Jun 2005 | B2 |
6905914 | Huemoeller et al. | Jun 2005 | B1 |
6921683 | Nakayama | Jul 2005 | B2 |
6921975 | Leal et al. | Jul 2005 | B2 |
6953708 | Hedler et al. | Oct 2005 | B2 |
6964889 | Ma et al. | Nov 2005 | B2 |
6977348 | Ho et al. | Dec 2005 | B2 |
6991966 | Tuominen | Jan 2006 | B2 |
7002245 | Huang et al. | Feb 2006 | B2 |
7015075 | Fay et al. | Mar 2006 | B2 |
7019406 | Huang et al. | Mar 2006 | B2 |
7048450 | Beer et al. | May 2006 | B2 |
7067356 | Towle et al. | Jun 2006 | B2 |
7071024 | Towle et al. | Jul 2006 | B2 |
7078788 | Vu et al. | Jul 2006 | B2 |
7091595 | Fuergut et al. | Aug 2006 | B2 |
7102807 | Shi et al. | Sep 2006 | B2 |
7112467 | Eichelberger et al. | Sep 2006 | B2 |
7132312 | Huang et al. | Nov 2006 | B2 |
7163843 | Kiendl et al. | Jan 2007 | B2 |
7170152 | Huang et al. | Jan 2007 | B2 |
7176567 | Yang et al. | Feb 2007 | B2 |
7185426 | Hiner et al. | Mar 2007 | B1 |
7192807 | Huemoeller et al. | Mar 2007 | B1 |
7196408 | Yang et al. | Mar 2007 | B2 |
7205674 | Huang et al. | Apr 2007 | B2 |
7224061 | Yang et al. | May 2007 | B2 |
7238602 | Yang et al. | Jul 2007 | B2 |
7247523 | Huemoeller et al. | Jul 2007 | B1 |
7262081 | Yang et al. | Aug 2007 | B2 |
7276783 | Goller et al. | Oct 2007 | B2 |
7294529 | Tuominen | Nov 2007 | B2 |
7294791 | Danoski et al. | Nov 2007 | B2 |
7338884 | Shimoto et al. | Mar 2008 | B2 |
7339279 | Yang | Mar 2008 | B2 |
7342296 | Yang et al. | Mar 2008 | B2 |
7344917 | Gautham | Mar 2008 | B2 |
7361987 | Leal et al. | Apr 2008 | B2 |
7364944 | Huang et al. | Apr 2008 | B2 |
7416918 | Ma | Aug 2008 | B2 |
7416920 | Yang et al. | Aug 2008 | B2 |
7420272 | Huemoeller et al. | Sep 2008 | B1 |
7420273 | Liu et al. | Sep 2008 | B2 |
7423340 | Huang et al. | Sep 2008 | B2 |
7425464 | Fay et al. | Sep 2008 | B2 |
7445957 | Huang et al. | Nov 2008 | B2 |
7453148 | Yang et al. | Nov 2008 | B2 |
7459781 | Yang et al. | Dec 2008 | B2 |
7476563 | Mangrum et al. | Jan 2009 | B2 |
7482198 | Bauer et al. | Jan 2009 | B2 |
7501310 | Yang et al. | Mar 2009 | B2 |
7514767 | Yang | Apr 2009 | B2 |
7525185 | Yang et al. | Apr 2009 | B2 |
7557437 | Yang et al. | Jul 2009 | B2 |
7572681 | Huemoeller et al. | Aug 2009 | B1 |
7575173 | Fuergut et al. | Aug 2009 | B2 |
7576425 | Liu | Aug 2009 | B2 |
7588951 | Mangrum et al. | Sep 2009 | B2 |
7595226 | Lytle et al. | Sep 2009 | B2 |
7612295 | Takada et al. | Nov 2009 | B2 |
7618846 | Pagaila et al. | Nov 2009 | B1 |
7619304 | Bauer et al. | Nov 2009 | B2 |
7619901 | Eichelberger et al. | Nov 2009 | B2 |
7622733 | Fuergut et al. | Nov 2009 | B2 |
7629186 | Siaudeau | Dec 2009 | B2 |
7629199 | Huang et al. | Dec 2009 | B2 |
7642128 | Lin et al. | Jan 2010 | B1 |
7655501 | Yang et al. | Feb 2010 | B2 |
7667318 | Yang et al. | Feb 2010 | B2 |
7671466 | Pu et al. | Mar 2010 | B2 |
7675170 | Formosa | Mar 2010 | B2 |
7692286 | Huemoeller et al. | Apr 2010 | B1 |
7714431 | Huemoeller et al. | May 2010 | B1 |
7732242 | Brunnbauer et al. | Jun 2010 | B2 |
7741151 | Amrine et al. | Jun 2010 | B2 |
7741156 | Pagaila et al. | Jun 2010 | B2 |
7750467 | Pu et al. | Jul 2010 | B2 |
7759163 | Kroeninger et al. | Jul 2010 | B2 |
7763494 | Yang et al. | Jul 2010 | B2 |
7763976 | Tang et al. | Jul 2010 | B2 |
7767495 | Fuergut et al. | Aug 2010 | B2 |
7767496 | Shim et al. | Aug 2010 | B2 |
7772081 | Lin et al. | Aug 2010 | B2 |
7790503 | Lin et al. | Sep 2010 | B2 |
7790576 | Bathan et al. | Sep 2010 | B2 |
7799602 | Pagaila et al. | Sep 2010 | B2 |
7812434 | Yang | Oct 2010 | B2 |
20020158334 | Vu et al. | Oct 2002 | A1 |
20030077871 | Cheng et al. | Apr 2003 | A1 |
20040155352 | Ma | Aug 2004 | A1 |
20060284300 | Nishizawa et al. | Dec 2006 | A1 |
20070059866 | Yang et al. | Mar 2007 | A1 |
20070108580 | Goller | May 2007 | A1 |
20070170582 | Nomura et al. | Jul 2007 | A1 |
20070246806 | Ong et al. | Oct 2007 | A1 |
20070252481 | Iwamoto et al. | Nov 2007 | A1 |
20070296065 | Yew et al. | Dec 2007 | A1 |
20080085572 | Yang | Apr 2008 | A1 |
20080105967 | Yang et al. | May 2008 | A1 |
20080116564 | Yang et al. | May 2008 | A1 |
20080136002 | Yang et al. | Jun 2008 | A1 |
20080136004 | Yang et al. | Jun 2008 | A1 |
20080142960 | Leal et al. | Jun 2008 | A1 |
20080153209 | Liu et al. | Jun 2008 | A1 |
20080153245 | Lin et al. | Jun 2008 | A1 |
20080157316 | Yang et al. | Jul 2008 | A1 |
20080157327 | Yang et al. | Jul 2008 | A1 |
20080157336 | Yang et al. | Jul 2008 | A1 |
20080157402 | Ramakrishna et al. | Jul 2008 | A1 |
20080174008 | Yang et al. | Jul 2008 | A1 |
20080191343 | Liu et al. | Aug 2008 | A1 |
20080197469 | Yang et al. | Aug 2008 | A1 |
20080197473 | Chen et al. | Aug 2008 | A1 |
20080230860 | Yen et al. | Sep 2008 | A1 |
20080237879 | Yang et al. | Oct 2008 | A1 |
20080246126 | Bowles et al. | Oct 2008 | A1 |
20080251908 | Yang et al. | Oct 2008 | A1 |
20080258293 | Yang et al. | Oct 2008 | A1 |
20080284035 | Brunnbauer et al. | Nov 2008 | A1 |
20080303110 | Lee | Dec 2008 | A1 |
20080315375 | Eichelberger et al. | Dec 2008 | A1 |
20080315377 | Eichelberger et al. | Dec 2008 | A1 |
20080315391 | Kohl et al. | Dec 2008 | A1 |
20080315404 | Eichelberger et al. | Dec 2008 | A1 |
20090014826 | Chien et al. | Jan 2009 | A1 |
20090039455 | Chien et al. | Feb 2009 | A1 |
20090050995 | Liu et al. | Feb 2009 | A1 |
20090050996 | Liu et al. | Feb 2009 | A1 |
20090075428 | Tang et al. | Mar 2009 | A1 |
20090096093 | Yang et al. | Apr 2009 | A1 |
20090096098 | Yang et al. | Apr 2009 | A1 |
20090102066 | Lee et al. | Apr 2009 | A1 |
20090108460 | Otremba et al. | Apr 2009 | A1 |
20090127686 | Yang et al. | May 2009 | A1 |
20090140441 | Camacho et al. | Jun 2009 | A1 |
20090140442 | Lin | Jun 2009 | A1 |
20090146297 | Badakere et al. | Jun 2009 | A1 |
20090155959 | Lin et al. | Jun 2009 | A1 |
20090160046 | Otremba et al. | Jun 2009 | A1 |
20090160053 | Meyer et al. | Jun 2009 | A1 |
20090166785 | Camacho et al. | Jul 2009 | A1 |
20090166873 | Yang et al. | Jul 2009 | A1 |
20090170242 | Lin et al. | Jul 2009 | A1 |
20090176348 | Griffiths | Jul 2009 | A1 |
20090221114 | Xu | Sep 2009 | A1 |
20090224391 | Lin et al. | Sep 2009 | A1 |
20090230542 | Lin et al. | Sep 2009 | A1 |
20090236686 | Shim et al. | Sep 2009 | A1 |
20090236749 | Otremba et al. | Sep 2009 | A1 |
20090256247 | Landau et al. | Oct 2009 | A1 |
20090261466 | Pagaila et al. | Oct 2009 | A1 |
20090273075 | Meyer-Berg | Nov 2009 | A1 |
20090294899 | Pagaila et al. | Dec 2009 | A1 |
20090294911 | Pagaila et al. | Dec 2009 | A1 |
20090309212 | Shim et al. | Dec 2009 | A1 |
20100001396 | Meyer et al. | Jan 2010 | A1 |
20100006330 | Fu et al. | Jan 2010 | A1 |
20100006994 | Shim et al. | Jan 2010 | A1 |
20100007029 | Do et al. | Jan 2010 | A1 |
20100013102 | Tay et al. | Jan 2010 | A1 |
20100019359 | Pagaila et al. | Jan 2010 | A1 |
20100019381 | Haeberlen et al. | Jan 2010 | A1 |
20100031500 | Eichelberger et al. | Feb 2010 | A1 |
20100032091 | Eichelberger et al. | Feb 2010 | A1 |
20100035384 | Eichelberger et al. | Feb 2010 | A1 |
20100044855 | Eichelberger et al. | Feb 2010 | A1 |
20100047970 | Eichelberger et al. | Feb 2010 | A1 |
20100052135 | Shim et al. | Mar 2010 | A1 |
20100059853 | Lin et al. | Mar 2010 | A1 |
20100059854 | Lin et al. | Mar 2010 | A1 |
20100072599 | Camacho et al. | Mar 2010 | A1 |
20100072618 | Camacho et al. | Mar 2010 | A1 |
20100140736 | Lin et al. | Jun 2010 | A1 |
20100140771 | Huang et al. | Jun 2010 | A1 |
20100140779 | Lin et al. | Jun 2010 | A1 |
20100200951 | Lin et al. | Aug 2010 | A1 |
20100221873 | Marimuthu et al. | Sep 2010 | A1 |
20100224983 | Huang et al. | Sep 2010 | A1 |
20100233831 | Pohl et al. | Sep 2010 | A1 |
20100308449 | Yang et al. | Dec 2010 | A1 |
20100314746 | Hsieh et al. | Dec 2010 | A1 |
20100320593 | Weng et al. | Dec 2010 | A1 |
20110018118 | Hsieh et al. | Jan 2011 | A1 |
20110018124 | Yang et al. | Jan 2011 | A1 |
Number | Date | Country | |
---|---|---|---|
20090102066 A1 | Apr 2009 | US |