ELEMENT WITH ROUTING STRUCTURE IN BONDING LAYER

BACKGROUND
Field

The field generally relates to bonding layers, and in particular, to direct bonding layers with a routing structure for a semiconductor element.

Description of the Related Art

Integrated device packages can use a redistribution layer (RDL) to redistribute or route electrical connections (e.g., signals, ground or power) from one or more integrated device dies in the package to other devices. For example, fan-out redistribution can convey signals from finely-pitched bond pads of an integrated device die outwardly for greater spacing. Fan-in redistribution can re-route from peripheral die pads to more centrally located RDL pads. Lines and pads can be formed of a conductive material (e.g., metal) and covered with a non-conductive material (an insulator), and openings in the insulator over pads can be filled, for example, with solder, metal bumps or pillars for connection to other elements.

Another technique for connecting separate electronic elements, such as dies, is direct hybrid bonding, whereby both conductive and non-conductive features of an electronic element are directly bonded to the conductive and non-conductive features, respectively of another electronic element. Bonding layers can be provided with both conductive and non-conductive features. In some cases, RDL can serve as the bonding layer for direct hybrid bonding. For example, a metal layer can be deposited and patterned on a die to serve as routing lines away from the die pads. An insulator is deposited over the lines and patterned with openings in which pads are formed from another metal layer, such as by damascene techniques. The pads are exposed at the top, while the routing lines are buried under the insulator. To achieve the planarity desired for direct bonding, the insulator and pads are finely polished and prepared for direct bonding to a different element.

There remains a continuing need for improved structures and methods for connecting an element that includes an electronic component to another element.

BRIEF DESCRIPTION OF THE DRAWINGS

The detailed description is set forth with reference to the accompanying figures. In the figures, the left-most digit(s) of a reference number identifies the figure in which the reference number first appears. The use of the same reference numbers in different figures indicates similar or identical items.

For this discussion, the devices and systems illustrated in the figures are shown as having a multiplicity of components. Various implementations of devices and/or systems, as described herein, may include fewer components and remain within the scope of the disclosure. Alternatively, other implementations of devices and/or systems may include additional components, or various combinations of the described components, and remain within the scope of the disclosure.

FIG. 1A is a schematic cross sectional side view of a first element and a second element prior to.

FIG. 1B is a schematic cross sectional side view of a bonded structure that includes the first element and the second element.

FIG. 2A is a schematic bottom plan view of an element 4 having a routing structure in a bonding layer 60.

FIG. 2B is a schematic cross sectional side view of apportion of the element illustrated in FIG. 2A.

FIG. 3A is an enlarged plan view of a portion of the element illustrated in FIG. 2A.

FIG. 3B is a schematic perspective view of the portion of the element illustrated in FIG. 3A.

FIG. 3C is an enlarged plan view of another portion of the element illustrated in FIG. 2A.

FIG. 3D is a schematic perspective view of the portion of the element illustrated in FIG. 3C.

FIG. 3E is an enlarged plan view of another portion of the element illustrated in FIG. 2A.

FIG. 3F is a schematic perspective view of the portion of the element illustrated in FIG. 3E.

FIGS. 4A to 4E show a manufacturing process of forming an element according to an embodiment.

FIGS. 4F and 4G show schematic top plan views of first and second mask layers used in the manufacturing process of FIGS. 4A to 4E.

FIG. 5A is a schematic top plan view of a mask layer for forming vias in a via layer of an element.

FIG. 5B is a schematic top plan view of a mask layer for forming contact pads and routing structures in a bonding layer of an element.

FIG. 6A shows the elongate conductive structure of the element illustrated in FIGS. 2A, 3C and 3D, and an elongate conductive structure of another element, prior to bonding.

FIG. 6B shows the elongate conductive structures of FIG. 6A after bonding.

FIG. 6C is a schematic cross sectional side view of a bonded structure that includes the elongate structures of FIG. 6A.

FIG. 7A is a chart showing example dimensions of components in a bonding layer.

FIG. 7B schematically illustrates locations of the dimensions shown in FIG. 7A.

FIG. 8A is a bottom plan view of an element having a routing structure in a bonding layer according to an embodiment.

FIG. 8B is an enlarged view of a portion of the element shown in FIG. 8A.

FIG. 9 is an infrared (IR) image of at or near a bonding interface of a bonded structure.

DETAILED DESCRIPTION

Two or more semiconductor elements (such as integrated device dies, wafers, etc.) may be bonded to one another to form a bonded structure. Conductive features (e.g., contact pads, exposed ends of vias (e.g., TSVs), or a through substrate electrodes) of one element may be electrically connected to corresponding conductive features of another element. Any suitable number of elements can be stacked in the bonded structure.

Referring to FIGS. 1A and 1B, in some embodiments, the elements (e.g., a first element 1 and the second element 2) are directly bonded to one another without an intervening adhesive. Instead, a redistribution layer (RDL) of one element is directly hybrid bonded to a redistribution layer of another element. In various embodiments, a non-conductive material 11 of the first element 1 (e.g., a first semiconductor device die with active circuitry or a first integrated device die) can be directly bonded to a corresponding a non-conductive material 31 of the second element 2 (e.g., a second semiconductor device die with active circuitry or an interconnect structure) without an adhesive. The non-conductive material 11 can be referred to as a non-conductive bonding region of the first element. The non-conductive material 11 of the first element 1 can be directly bonded to the corresponding non-conductive material 31 of the second element 2 using dielectric-to-dielectric bonding techniques. For example, dielectric-to-dielectric covalent bonds may be formed without an adhesive using the direct bonding techniques. Suitable non-conductive bonding materials include conventional insulating materials used in semiconductive processing including but not limited to silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, etc.

In various embodiments, direct bonds can be formed without an intervening adhesive. For example, dielectric bonding surfaces can be polished to a high degree of smoothness. The bonding surfaces can be cleaned and exposed to a plasma and/or etchants to activate the surfaces. In some embodiments, the surfaces can be terminated with a species after activation or during activation (e.g., during the plasma and/or etch processes). Without being limited by theory, in some embodiments, the activation process can be performed to break chemical bonds at the bonding surface, and the termination process can provide additional chemical species at the bonding surface that improves the bonding energy during direct bonding. In some embodiments, the activation and termination are provided in the same step, e.g., a plasma or wet etchant to activate and terminate the surfaces. In other embodiments, the bonding surface can be terminated in a separate treatment to provide the additional species for direct bonding. In various embodiments, the terminating species can comprise nitrogen. Further, in some embodiments, the bonding surfaces can be exposed to fluorine. For example, there may be one or multiple fluorine peaks at or near layer and/or bonding interfaces. Thus, in the directly bonded structures, the bonding interface between two dielectric materials can comprise a very smooth interface with higher nitrogen content and/or fluorine peaks at the bonding interface. Additional examples of activation and/or termination treatments may be found throughout U.S. Pat. Nos. 9,564,414; 9,391,143; and 10,434,749, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.

In various embodiments, conductive features (e.g., first and second contact pads 16, 18 shown in FIGS. 1A and 1B) of the first element 1 can be directly bonded to corresponding conductive features (e.g., third and fourth contact pads 36, 38 shown in FIGS. 1A and 1B) of the second element 2. For example, a hybrid bonding technique can be used to provide conductor-to-conductor direct bonds along a bond interface that includes covalently direct bonded dielectric-to-dielectric surfaces, prepared as described above. In various embodiments, the conductor-to-conductor (e.g., contact pad to contact pad) direct bonds and the dielectric-to-dielectric hybrid bonds can be formed using the direct bonding techniques disclosed at least in U.S. Pat. Nos. 9,716,033 and 9,852,988, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.

For example, dielectric bonding surfaces can be prepared and directly bonded to one another without an intervening adhesive as explained above. Conductive contact pads (which may be at least partially surrounded by non-conductive dielectric field regions) may also directly bond to one another without an intervening adhesive. In some embodiments, the respective conductive features can be recessed below exterior (e.g., upper) surfaces of the dielectric field or non-conductive bonding regions, for example, recessed by less than 20 nm, less than 15 nm, or less than 10 nm, for example, recessed in a range of 2 nm to 20 nm, or in a range of 4 nm to 10 nm. The non-conductive bonding regions can be directly bonded to one another without an adhesive at room temperature in some embodiments and, subsequently, the bonded structure can be annealed. Upon annealing, the conductive features can expand and contact one another to form a metal-to-metal direct bond. Beneficially, the use of hybrid direct bonding (e.g., DBI®, commercially available from Invensas Bonding Technologies, Inc. of San Jose, Calif.) techniques can enable high density of conductive features connected across the direct bond interface (e.g., small or fine pitches for regular arrays). In some embodiments, the pitch of the conductive features may be less 40 microns or less than 10 microns or even less than 1 micron. For some applications the ratio of the pitch of the conductive features to one of the dimensions of the bonding pad is less than 5, or less than 3 and sometimes desirably less than 2. In various embodiments, the conductive features can comprise copper, although other metals may be suitable.

Thus, in direct bonding processes, a first element can be directly bonded to a second element without an intervening adhesive. In some arrangements, the first element can comprise a singulated element, such as a singulated integrated device die. In other arrangements, the first element can comprise a carrier or substrate (e.g., a wafer) that includes a plurality (e.g., tens, hundreds, or more) of device regions that, when singulated, form a plurality of integrated device dies. Similarly, the second element can comprise a singulated element, such as a singulated integrated device die. In other arrangements, the second element can comprise a carrier or substrate (e.g., a wafer).

As explained herein, the first and second elements can be directly bonded to one another without an adhesive, which is different from a deposition process. The first and second elements can accordingly comprise non-deposited elements. A skilled artisan can visibly identify and distinguish the directly bonded elements and a layer that is deposited on an element. Further, directly bonded structures, unlike deposited layers, can include a defect region along the bond interface in which nanovoids are present. The nanovoids may be formed due to activation of the bonding surfaces (e.g., exposure to a plasma). As explained above, the bond interface can include concentration of materials from the activation and/or last chemical treatment processes. For example, in embodiments that utilize a nitrogen plasma for activation, a nitrogen peak can be formed at the bond interface. In embodiments that utilize an oxygen plasma for activation, an oxygen peak can be formed at the bond interface. The nitrogen peak can be detectable using secondary ion mass spectroscopy (SIMS) techniques. In various embodiments, for example, a nitrogen termination treatment (e.g., exposing the bonding surface to a nitrogen-containing plasma) can replace OH groups of a hydrolized (OH-terminated) surface with NH₂molecules, yielding a nitrogen-terminated surface. In embodiments that utilize an oxygen plasma for activation, an oxygen peak can be formed at the bond interface. In some embodiments, the bond interface can comprise silicon oxynitride, silicon oxycarbonitride, or silicon carbonitride. As explained herein, the direct bond can comprise a covalent bond, which is stronger than van Der Waals bonds. The bonding layers can also comprise polished surfaces that are planarized to a high degree of smoothness.

In various embodiments, the metal-to-metal bonds between the conductive features can be joined such that copper grains grow into each other across the bond interface. In some embodiments, the copper can have grains oriented along the 111 crystal plane for improved copper diffusion across the bond interface. The bond interface can extend substantially entirely to at least a portion of the bonded conductive features, such that there is substantially no gap between the non-conductive bonding regions at or near the bonded conductive features. In some embodiments, a barrier layer may be provided under the conductive features (e.g., which may include copper). In other embodiments, however, there may be no barrier layer under the conductive features, for example, as described in U.S. Pat. No. 11,195,748, which is incorporated by reference herein in its entirety and for all purposes.

FIG. 1A is a schematic cross sectional side view of the first element 1 and the second element 2 prior to bonding the first element 1 with the second element 2. FIG. 1B is a schematic cross sectional side view of a bonded structure 3 that includes the first element 1 and the second element 2. The first element 1 can comprise a first bonding layer 10, a first via layer 12, and a routing structure 13. In some embodiments, the routing structure 13 can have a plurality of layers. For example, the routing structure 13 can include an active layer 14 and a routing layer 15 and one or more via layers between a plurality of routing layers. In some embodiments, the routing structure 13 can include a probe pad (not shown) that can be used to test a semiconductor circuit of the first element 1. The first bonding layer 10 can comprise a non-conductive material 11, and conductive features (a first contact pad 16, a second contact pad 18, and a first routing trace 20). The routing trace 20 can be formed at the same level as the first contact pad 16 and the second contact pad 18 within the bonding layer 10. A first via layer 12 can comprise a first via 22 and a second via 24. The first contact pad 16, the second contact pad 18, and the first routing trace 20 can comprise the same material. In some embodiments, the first contact pad 16, the second contact pad 18, and the first routing trace 20 can be simultaneously formed in a single manufacturing sequence, including a single patterning process. For example, the first contact pad 16, the second contact pad 18, and the first routing trace 20 can be formed in a single damascene process using a single mask to pattern and etch voids in the non-conductive material 11 to be filled with the conductive material for pads 16, 18 and first routing trace 20. In other examples, a single mask can be used to first pattern conductive layer to form pads 16, 18 and first routing trace 20, and the non-conductive material 11 can be subsequently formed thereover to embed the conductive features. The mask process can pattern etch a blanket conductive layer; the mask process can be used to form a lift-off mask pattern prior to conductive material deposition; or a shadow mask can be employed to deposit the conductive material to form the pads 16, 18 and first routing trace 20. In another embodiment, the first contact pad 16, the second contact pad 18, and the first routing trace 20 can be formed in a single damascene process.

A bonding surface 10a of the first element 1 is highly polished in preparation for direct bonding. In some embodiments, the roughness of the non-conductive material 11 is less than 15 Å rms. In some embodiments, the roughness of the non-conductive material 11 is less than 10 Å rms. In some embodiments, the roughness of the non-conductive material 11 is less than 5 Å rms. The non-conductive material 11 can also include signatures of activation and/or termination for direct bonding, such as fluorine and nitrogen profiles, as described above.

In some embodiments, the first contact pad 16, the second contact pad 18, and the first routing trace 20 can be exposed at the bonding surface 10a of the first bonding layer 10. In some embodiments, the non-conductive material 11, the first contact pad 16, the second contact pad 18, and the first routing trace 20 can be approximately coplanar with each other at the bonding surface 10a as the result of planarization (e.g., CMP). For example, an upper surface of the non-conductive material 11, an upper surface of the first contact pad 16, an upper surface the second contact pad 18, and an upper surface the first routing trace 20 can be coplanar with one another such that the upper surfaces the first contact pad 16, the second contact pad 18, and the first routing trace 20 are recessed from the upper surface of the non-conductive material 11 less than or equal to 50 nm, 30 nm, or 20 nm. In some embodiments, the first contact pad 16, the second contact pad 18, and/or the first routing trace 20 can have thicknesses that are approximately equal to or generally similar to a thickness of the bonding layer 10. The thickness of the first contact pad 16 and/or the second contact pad 18 can define the thickness of the bonding layer 10. For example, the first contact pad 16, the second contact pad 18, and/or the first routing trace 20 can extend through a thickness of the non-conductive material 11 of the first bonding layer 10 and be coplanar with one another at a bottom surface adjacent the illustrated first via layer 12. In some embodiments, a portion of the non-conductive material 11 can be disposed between the first via layer 12 and the first contact pad 16, the second contact pad 18, or the routing trace 20. In another embodiment, the first contact pad 16, the second contact pad 18, and/or the first routing trace 20 can have different thicknesses. For example, the first contact pad 16, the second contact pad 18 can have thicknesses that are approximately equal to or generally similar to a thickness of the bonding layer 10, but the first routing trace 20 can have a thickness that is smaller than the thickness of the bonding layer 10.

The surfaces of the conductive features (e.g., the first contact pad 16, the second contact pad 18, and the first routing trace 20) at the bonding surface 10a can vary slightly from flush with the non-conductive material 11 for a few reasons. In the first place, the conductive features may be intentionally recessed relative to the non-conductive surface in a planarization process, typically by between about 1 nm and 20 nm, in order to prepare for hybrid direct bonding. Furthermore, because the first routing trace 20 can be narrower than the contact pads 38, it may be subject to differential dishing relative to the wider conductive features.

In some embodiments, the first routing trace 20 can comprise an elongate conductive feature having a trace width that is narrower than a maximum width of the first contact pad 16 and/or a maximum width of the second contact pad 18 (see FIG. 3A). In some other embodiments, the elongate conductive feature can be continuous with, and formed from the same deposition or same conductive layer as, the first contact pad 16 and the second contact pad 18. The first routing trace 20 can extend laterally from the first contact pad 16 in the first bonding layer 10. In some embodiments, the first routing trace 20 can connect the first contact pad 16 and the second contact pad 18. The first routing trace 20 can provide a redistribution layer (RDL) function to the first bonding layer 10.

In some embodiments, the first via 22 can be electrically connected with the first contact pad 16, and the second via 24 can be electrically connected with the first routing trace 20. For example, the first via 22 can connect to an electronic circuit in the first active layer 14, and the second via 24 can connect to a different electronic circuit in the first active layer 14. In some embodiments, the first via 22 and/or the second via 24 can extend through a thickness of the first via layer 12. For example, the first via 22 and the second via 24 and the portions of the first active layer 14 can be electrically connected through the routing layer 15. The first active layer 14 can comprise an electrical circuit (not shown) formed in and on semiconductor material, including transistors and other electrical devices, and can include back end of line (BEOL) metallization layers interconnecting the devices. In some embodiments, the first via 22 and/or the second via 24 can electrically connect the first contact pad 16 to the electrical circuit of the first active layer 14. In some embodiments, the via layer 12 can be formed over and communicate with BEOL (e.g., interconnects, die pads) of the first active layer 14 at a stage when RDL is typically formed (e.g., at the wafer level or reconstituted wafer level prior to dicing). In other embodiments, the via layer can be omitted and bonding layer contact pads can directly connect to underlying BEOL of the active layer. In some embodiments, the first contact pad 16 can be electrically connected to the second contact pad 18 via the routing trace 20, the first via 22 can be electrically connected with the first contact pad 16, but there may be no second via 24 directly connecting the routing trace 20.

The first element can be configured to bond to another element (the second element 2). In some embodiments, the second element 2 can have the same or generally similar structure as the first element 1. The second element 2 can comprise a second bonding layer 30, a second via layer 32, and a second active layer 34. The second bonding layer 30 can comprise a non-conductive material 31, a third contact pad 36, a fourth contact pad 38, and a second routing trace 40 extending from the third contact pad 36 but not in contact with the fourth contact pad 38. The second via layer 32 can comprise a third via 42 and a fourth via 44. In some embodiments, the third contact pad 36, the fourth contact pad 38, and the second routing trace 40 can be exposed on a bonding surface 30a of the second bonding layer 30. In some embodiments, the non-conductive material 31, the third contact pad 36, the fourth contact pad 38, and the second routing trace 40 can be coplanar with each other on the bonding surface 30a. Unless otherwise noted, components of the second element 2, including low roughness, surface activation and recesses of the conductive features relative to the non-conductive features, may be the same as or generally similar to like components of the first element 1.

As shown in FIG. 1B, the first element 1 and the second element 2 can be bonded along a bonding interface 45 to form the bonded structure 3. In some embodiments, the first element 1 can be directly bonded with the second element 2 such that the first contact pad 16 is directly bonded with the third contact pad 36 without an intervening adhesive, and/or the second contact pad 18 is directly bonded with the fourth contact pad 38 without an intervening adhesive. In some embodiments, the non-conductive material 11 of the first bonding layer 10 and the non-conductive material 31 of the second bonding layer 30 can be directly bonded without an intervening adhesive. In some embodiments, the routing trace 20 of the first element 1 can be in direct contact with the non-conductive material 31 of the second element 2, and similarly the routing trace 40 of the second element 2 can be in direct contact with the non-conductive material 11 of the first element. In some embodiments, a portion of the routing race 20 can be directly bonded to the third contact pad 36 or the fourth contact pad 38, and the routing trace 40 can be directly bonded to the first contact pad 16 or a fifth contact pad 50, due to misalignment of the first element 1 and the second element 2. In some other embodiments, a portion of the routing trace 20 can be directly bonded to the portion of another routing trace (not shown) exposed at the surface of the second bonding layer 30 of the second element 2.

The first bonding layer 10 can comprise the fifth contact pad 50, and the second bonding layer 30 can comprise a sixth contact pad 52. The fifth contact pad 50 and the sixth contact pad 52 can be directly bonded to one another without an intervening adhesive. In some embodiments, the second routing trace 40 can extend laterally from the third contact pad 36 in the second bonding layer 30. In some embodiments, the second routing trace 40 can connect the third contact pad 36 and the sixth contact pad 52.

In some embodiments, the third via 42 can be electrically connected with the sixth contact pad 52, and the fourth via 44 can be electrically connected with the second routing trace 40. In some embodiments, the third via 42 and/or the fourth via 44 can extend through a thickness of the second via layer 32. In some embodiments, the third via 42 and/or the fourth via 44 can electrically connect the sixth contact pad 52 to the electrical circuit of the second active layer 34.

In some embodiments, the first element 1 and the second element 2 can comprise additional contact pads and routing traces. A routing-included bonding layer, such as the first bonding layer 10 and the second bonding layer 30, that includes both bonding pads and a routing trace (the first routing trace 20 and the second routing trace 40) can enable an element (the first element 1 and the second element 2) to rout or redistribute an electrical connection laterally within the routing-included bonding layer without having an additional layer, such as an underlying separate redistribution (RDL) layer, for routing the electrical connection. The routing-included bonding layer can reduce manufacturing cost, simplify manufacturing method, and reduce thickness of the element. In some applications, the routing-included bonding layer can improve manufacturing yield. Of course, in other embodiments, the benefits of routing combined with bonding pads in the same metal layer and by the same patterning steps can be combined with additional routing layers, such as the routing structure 13 and/or additional routing layer(s) (not shown) between the illustrated first bonding layer 10 and the first via layer 12.

FIG. 2A is a schematic bottom plan view of an element 4 having a routing structure in a bonding layer 60. FIG. 2B is a schematic cross sectional side view of apportion of the element 4 illustrated in FIG. 2A. FIG. 3A is an enlarged plan view of a portion of the element 4 illustrated in FIG. 2A. FIG. 3B is a schematic perspective view of the portion of the element 4 illustrated in FIG. 3A. FIG. 3C is an enlarged plan view of another portion of the element 4 illustrated in FIG. 2A. FIG. 3D is a schematic perspective view of the portion of the element 4 illustrated in FIG. 3C. FIG. 3E is an enlarged plan view of another portion of the element 4 illustrated in FIG. 2A. FIG. 3F is an schematic perspective view of the portion of the element 4 illustrated in FIG. 3E. The bonding layer 60 of the element 4 can include a plurality of contact pads 56 and a plurality of routing traces 58. Unless otherwise noted, components of FIGS. 2A-3F may be the same as or generally similar to like components of FIGS. 1A and 1B. In various figures, the plurality of contact pads 56 are shown as circular pads. However, the contact pads 56 can have any suitable shape, such as a rectangular (e.g., square) shape, an octagonal shape, etc.

Referring to FIGS. 2B, 3A, and 3B, the element 4 can comprise the bonding layer 60 that includes a non-conductive material 61, a first contact pad 66, a second contact pad 68, and a routing trace 70, a via layer 62 that includes a first via 72 and a second via 74, and an active layer 64 that includes first circuitry 64a and second circuitry 64b. The bonding layer 60 can have a bonding surface 60a that is configured to bond to another element. In some embodiments, the bonding surface 60a of the bonding layer 60 can be configured to bond to another element such that the first contact pad 66 and the second contact pad 68 are directly bonded to corresponding conductive features (e.g., contact pads) without an intervening adhesive. The non-conductive material 61 can be configured to directly bond to a corresponding non-conductive material of the other element.

In some embodiments, the first via 72 can electrically connect the first contact pad 66 to the first circuitry 64a, and the second via 74 can electrically connect the second contact pad 68 to the second circuitry 64b. The via layer can include any suitable number of vias.

Referring to FIG. 3a, the first contact pad 66 has a maximum width w1, and the second contact pad 68 has a maximum width w2. In some embodiments, the widths w1, w2 of the first contact pad 66 and the second contact pad 68 can be the same or generally similar. In some embodiments, the routing trace 70 can comprise an elongate conductive feature having a trace width w3 that is narrower than the width w1 of the first contact pad 16 and/or the width w2 of the second contact pad 68. In some embodiments, the width w1 of the first contact pad 66 and/or the width w2 of the second contact pad 68 can be at least, for example, two times, three times, five times, or ten times larger than the trace width w3 of the routing trace 70.

Referring to FIGS. 3C and 3D, the bonding layer 60 of the element 4 can comprise an elongate conductive structure that serves as a routing trace 80. The routing trace 80 can be configured to electrically connect elements through vias 82, 84 that are connected to different portions of the routing trace 80. As explained below with respect to FIGS. 6A-6C, such elongate conductive structures can alternatively or additionally serve as contact features in conjunction with elongate conductive structures on an opposite directly bonded element. In some embodiments, the routing trace 80 can comprise a contact portion that can function as a contact pad, and a routing portion that provides a routing function between the vias 82, 84.

Referring to FIGS. 3E and 3F, the bonding layer 60 of the element 4 can comprise a contact pad 86, another contact pad 88, and a routing trace 90 that laterally extends from the contact pad 86 in the conductive layer 60. The element 4 can include a via 92 that is connected to a portion of the routing trace 90. The routing trace 90 can serve an RDL function to shift position of the contact pad 86 relative to the underlying via 92 and die pads or interconnects to which it connects. Although FIGS. 3B and 3F show traces 70, 90 with lower surfaces that are elevated relative to the lower surfaces of the contact pads 66, 68, 86, 88 of the same bonding layers, the skilled artisan will appreciate from the description of processing techniques described below that that the traces and contact pads can be coplanar at their bottom surfaces opposite at the bonding surface 60a. Additionally, top surfaces of the contact pads 86, 88 may be recessed slightly more than the corresponding traces 70, 90 due to differential dishing of differently dimensioned metal features during polishing (e.g., CMP), as will be understood by the skilled artisan.

In various embodiments disclosed herein, a routing structure may be illustrated as an example of a routing structure. However, in some embodiments, the routing structure may comprise other structures that can laterally route electrical connections, such as signal, ground, or power connections, within a bonding layer. In some embodiments, a routing trace can comprise multiple routing lines, or curved or non-straight lines, and not limited to a single straight conductive line or trace.

FIGS. 4A to 4E show a manufacturing process of forming an element 5 according to an embodiment. FIGS. 4F and 4G show schematic top plan views of first and second mask layers 96, 98 used in the manufacturing process. Unless otherwise noted, components of FIGS. 3A-4G may be the same as or generally similar to like components disclosed herein.

FIG. 4A is a schematic cross sectional side view of a structure having a bonding layer 60 and a via layer 62 in a step of the manufacturing process. While a dual damascene process is described to simultaneously deposit vias in the via layer 62 and traces/pads in the bonding layer 60, the skilled artisan will appreciate that the principles and advantages taught herein are applicable even if the vias of the via layer 62 are formed prior to forming the bonding layer 60.

At FIG. 4A, the first mask layer 96, such as patterned resist, can be provided on the bonding layer 60. FIG. 4B is a schematic cross sectional side view of the structure having via holes 72a, 74a, in another step of the manufacturing process. At FIG. 4B, the via holes 72a, 74a can be formed through both bonding layer 60 and the via layer 62. In some embodiments, the via holes 72a, 74a can be formed by way of etching.

FIG. 4C is a schematic cross sectional side view of the structure after removal of or modification of the first mask layer 96 and formation of the second mask layer 98 on the bonding layer 60. FIG. 4D is a schematic cross sectional side view of the structure having cavities 66a, 68a, 70a, in another step of the manufacturing process. In some embodiments, the cavities 66a, 68a, 70a can be formed by way of etching.

At FIG. 4E, the contact pads 66, 68, routing trace 70, and vias 72, 74 can be formed in the cavities 66a, 68a, 70a, respectively. In some embodiments, the routing trace 70 have a relatively narrow line with the same depth or thickness as the contact pads 66, 68. In some embodiments, the contact pads 66, 68, routing trace 70, and vias 72, 74 can be formed by providing a conductive material, such as copper, therein. For example, the conductive material can be provided by way of barrier and seed deposition (e.g., by PVD) and copper plating, followed by polishing back the copper overburden, as is known in damascene processing. In some embodiments, the contact pads 66, 68 and routing trace 70, can be formed by a single damascene process over preexisting vias, or the via layer 62 can be omitted. In the illustrated embodiment, a dual damascene process is used to simultaneously fill the via holes 72a, 74a that were defined by the first mask layer 96 (FIG. 4B). Vias 72, 74 formed using a dual damascene process can be referred to as dual damascene vias.

It will be understood that, in this, with or without dual damascene processing, and with or without an underlying via layer, the trace 70 and contact pads 66, 68 are formed from the same deposition(s) (e.g., barrier and seed deposition PVD and copper plating), and the same metal layer(s). Furthermore, the patterns of the trace 70 and contact pads 66, 68 are define by the same mask 98.

FIG. 5A is a schematic top plan view of a mask layer 100 for forming vias in a via layer of an element. FIG. 5B is a schematic top plan view of a mask layer 102 for forming contact pads and routing structures, such as routing traces, in a bonding layer of an element. In some embodiments, the mask layer 100 and/or the mask layer 102 can be used to form the element 4 illustrated in FIGS. 2A-3F. The mask layers 100, 102 may be used in a process that is the same or similar to the manufacturing process described with respect to FIGS. 4A to 4E.

FIG. 6A shows the elongate conductive structure 80 of the element 4 illustrated in FIGS. 2A, 3C and 3D, and an elongate conductive structure 80′ of another element, prior to bonding. FIG. 6B shows the elongate conductive structure 80 and the elongate conductive structure 80′ after bonding. FIG. 6C is a schematic cross sectional side view of a bonded structure that includes the elongate structure 80 and the elongate conductive structure 80′.

A contact location 80a of the elongate conductive structure 80 and a contact location 80′a of the elongate conductive structure 80′ can be bonded to one another. In some embodiments, the contact location 80a of the elongate conductive structure 80 and the contact location 80′a of the elongate conductive structure 80′ can be directly bonded to one another without an intervening adhesive. The use of crossing lines in the bonding layers as contact pads provides wider alignment margins. The elongate conductive structure 80 and/or the elongate conductive structure 80′ can be connected to a plurality of vias, as disclosed herein, thereby providing electrical routing between the vias.

FIG. 7A is a chart showing example dimensions of a contact pad diameter, a contact pad pitch, a contact pad to contact pad space, a maximum routing trace width, a contact pad to routing trace space, a ratio of contact pad to contact pad space to contact pad to routing space, and a via diameter. FIG. 7B schematically illustrates locations of the dimensions shown in FIG. 7A. In some embodiments, the contact pad diameter, the contact pad pitch, the contact pad to contact pad space, the maximum routing trace width, the contact pad to routing trace space, the ratio of contact pad to contact pad space to contact pad to routing space, and the via diameter can be smaller or larger than those shown in FIG. 7A. For example, each of the contact pad diameter, the contact pad pitch, the contact pad to contact pad space, the maximum routing trace width, the contact pad to routing trace space, the ratio of contact pad to contact pad space to contact pad to routing space, and the via diameter can range between 1%, 3%, 5%, 10% or 20% of the values shown in FIG. 7A (for example, the listed value can include the value +/−1%, 3%, 5%, 10%, or 20%). In some embodiments, the contact pad diameter can be in a submicron scale. In some embodiments, the via diameter can be in a range of, for example, 0.2 μm to 50 μm, 0.2 μm to 25 μm, 0.2 μm to 10 μm, 0.2 μm to 5 μm, 0.2 μm to 2 μm, 2 μm to 50 μm, 40 μm to 50 μm, or 10 μm to 25 μm. The contact pad pitch can be in a range of, for example, 0.4 μm to 5 μm, 0.4 μm to 2 μm, 0.4 μm to 0.9 μm, 0.6 μm to 5 μm, or 0.8 μm to 2 μm.

FIG. 8A is a bottom plan view of an element 6 having a routing structure in a bonding layer 60. FIG. 8B is an enlarged view of a portion of the element 6 shown in FIG. 8A. The bonding layer 60 of the element 6 can include a plurality of contact pads 56 and a plurality of routing traces 58. Unless otherwise noted, components of FIGS. 8A and 8B may be the same as or generally similar to like components disclosed herein. FIGS. 8A and 8B shows that the plurality of contact pads 56 can comprise polygonal (e.g., rectangular or square) pads, in some embodiments.

FIG. 9 is an infrared (IR) image of at or near a bonding interface of a bonded structure. As shown in FIG. 9, two or more contact pads 56 can be routed in the bonding layer through the routing traces 58. Though the routing traces 58 shown in FIG. 9 connects adjacent pads 56, the routing traces 58 can connect remote pads in some embodiments.

In one aspect, a bonded structure is disclosed. The bonded structure can include a first element that includes a first bonding layer. The first bonding layer has a first contact pad and a routing trace. The routing trace is formed at the same level as the first contact pad. The bonded structure can include a second element that includes a second bonding layer having a second contact pad. The first bonding layer of the first element and the second bonding layer of the second element are directly bonded such that the first contact pad and the second contact pad are directly bonded without an intervening adhesive.

In one embodiment, the first bonding layer further includes a third contact pad. The second bonding layer can further include a fourth contact pad. The third contact pad and the fourth contact pad can be directly bonded to one another without an intervening adhesive.

In one embodiment, the routing trace has a maximum trace width that is narrower than a maximum width of the first contact pad.

In one embodiment, the routing trace contacts and laterally extends from the first contact pad.

In one embodiment, the routing trace and the first contact pad are formed from the same conductive material(s).

In one embodiment, the first element further includes a first via layer on a side of the bonding layer opposite the second element. The first via layer can include a via extending through a thickness of the first via layer. The first element can further include an electronic circuit. The first via can electrically connect the first contact pad and the electronic circuit. The first element can further include a routing structure. The first via can electrically connect the first contact pad and the routing structure. The routing structure can include a redistribution layer.

In one embodiment, the second bonding layer of the second element further includes a second routing trace.

In one embodiment, a thickness of the first contact pad defines a thickness of the first bonding layer.

In one embodiment, the first element includes a plurality of contact pads including the first contact pad. A diameter of at least one of the plurality first contact pad can be less than 5 microns.

In one aspect, a bonded structure is disclosed. The bonded structure can include a first element that includes a first bonding layer. The first bonding layer has a first contact pad and a routing trace connected to the first contact pad. The routing trace extends laterally from the first contact pad in the first bonding layer. The routing trace and the first contact pad are formed from the same conductive materials. The bonded structure can include a second element that includes a second bonding layer having a second contact pad. The first element and the second element are directly bonded such that the first contact pad and the second contact pad are directly bonded without an intervening adhesive.

In one aspect, a bonded structure is disclosed. The bonded structure can include a first element that includes a first bonding layer. The first bonding layer has a first contact pad and a routing trace. The bonded structure can include a second element that includes a second bonding layer having a second contact pad. The first element and the second element are directly bonded along an bond interface such that the first contact pad and the second contact pad are directly bonded without an intervening adhesive. The routing trace and the first contact pad are disposed along the bond interface.

In one embodiment, the routing trace contacts non-conductive material of the second bonding layer

In one aspect, a bonded structure is disclosed. The bonded structure can include a first element that includes a first bonding layer having a bonding side and a back side opposite the bonding side and a via layer on the back side of the first bonding layer. The first bonding layer includes an elongate conductive feature in electrical contact with two vias of the via layer. The bonded structure can include a second element that includes a second bonding layer having a conductive feature. The first element and the second element are directly bonded such that the elongate conductive feature is in contact with the second bonding layer.

In one embodiment, the elongate conductive feature of the first element is in direct contact with the conductive feature of the second element.

In one embodiment, the first element includes a contact pad that is connected to the elongate conductive feature. The contact pad can be directly bonded to the conductive feature of the second element.

In one aspect, an element having a bonding layer is disclosed. The element can include a first contact pad that is embedded in non-conductive material of the bonding layer. An upper surface of the first contact pad is not covered by the non-conductive material of the bonding layer. The element can include a routing trace that is embedded in the non-conductive material of the bonding layer. An upper surface of the routing trace is not covered by the non-conductive material of the bonding layer. The bonding layer is configured to directly bond to another element without an intervening adhesive.

In one embodiment, the routing trace laterally connects the first contact pad and a second contact pad.

In one embodiment, the routing trace is formed at the same metal level as the first contact pad.

In one embodiment, the routing trace is formed from the same metal layer(s) as the first contact pad.

In one embodiment, the non-conductive material of the bonding layer has a surface roughness less than about 20 Å rms. The element of claim 24, wherein the contact pad and the routing trace are recessed below an upper surface of the non-conductive material of the bonding layer by less than or equal to about 20 nm. The non-conductive material of the bonding layer can include nitrogen and/or fluorine doping in an amount suitable for directly bonding to a similar non-conductive material of a second element.

In one aspect, an element having a bonding layer is disclosed. The element can include a first contact pad in the bonding layer, and a routing trace in the bonding layer. The first contact pad and the routing trace are exposed at a bonding surface of the bonding layer. The bonding surface of the bonding layer is configured to directly bond to another element without an intervening adhesive.

In one embodiment, the routing trace electrical connects to a via in a via layer beneath the bonding layer.

In one embodiment, the routing trace extends from the first contact pad.

In one embodiment, the routing trace extends between the first contact pad and a second contact pad in the bonding layer.

In one embodiment, the routing trace extends from the first contact pad.

In one embodiment, the routing trace has a width narrower than a maximum width of the first contact pad.

In one aspect, a method of forming an element that is configured to directly bond with another element is disclosed. The method can include removing portions of a bonding layer of the element from a bonding surface of the bonding layer, providing a conductive material to the removed portions of the bonding layer to form a contact pad and a routing trace, and preparing the bonding surface for direct bonding. The routing trace extending laterally from the contact pad in the bonding layer.

In one aspect, a method of forming an element that is configured to bond with another element. The method includes patterning a conductive layer to form a contact pad and a routing trace, embedding, at least partially, the contact pad and the routing trace in a non-conductive material, and polishing surfaces of the contact pad, the routing trace, and the non-conductive material to prepare for direct bonding.

In one embodiment, patterning and embedding includes a damascene process using a single mask to define cavity patterns for the contact pad and the routing trace, and depositing the conductive layer into the cavity patterns.

In one embodiment, the method further includes patterning a via holes in via layer below the bonding layer using an additional mask. Depositing the conductive layer into the conductive layer can include simultaneously filling the via holes in a dual damascene process. Depositing the conductive layer can include depositing a barrier layer, a seed layer and an electroplated copper layer.

In one aspect, a method of forming a bonded structure is disclosed. The method can include providing a first element that includes a first bonding layer. The first bonding layer has a non-conductive material, a first contact pad and a routing trace. The routing trace is formed at the same metal level as the first contact pad. The method can include polishing surfaces of the first contact pad, the routing trace, and the non-conductive material to prepare for direct bonding.

In one embodiment, the method further includes providing a second element including a second bonding layer having a second contact pad. The method can further include directly bonding the first element and the second element such that the first contact pad and the second contact pad are directly bonded without an intervening adhesive.

In one aspect, a bonded structure is disclosed. The bonded structure can include a first element that includes a first bonding surface. The first bonding surface has a first contact pad and a routing trace. The bonded structure can include a second element that includes a second bonding surface having a second contact pad. The first element and the second element are directly bonded such that the first contact pad and the second contact pad are directly bonded without an intervening adhesive. The routing trace is in contact with the second bonding surface.

In one embodiment, the first bonding surface further includes a third contact pad. The second bonding surface can further include a fourth contact pad. The third contact pad and the fourth contact pad are directly bonded to one another without an intervening adhesive.

In one embodiment, the routing trace has a maximum trace width that is narrower than a maximum width of the first contact pad.

In one embodiment, the routing trace contacts and laterally extends from the first contact pad.

In one embodiment, the routing trace and the first contact pad are formed from the same conductive material(s).

In one embodiment, the first element further comprises a first via layer. The first via layer can include a via extending through a thickness of the first via layer. The first element can further include an electronic circuit. The first via can electrically connect the first contact pad and the electronic circuit. The first element can further include a routing structure. The first via can electrically connect the first contact pad and the routing structure. The routing structure can include a redistribution layer.

In one embodiment, the second bonding surface of the second element further includes a second routing trace.

In one embodiment, a thickness of the first contact pad is greater than a thickness of the routing trace. The bonded structure of claim 41, wherein the first element comprises a plurality of contact pads including the first contact pad, a diameter of at least one of the plurality first contact pads is less than 5 microns.

Unless the context clearly requires otherwise, throughout the description and the claims, the words “comprise,” “comprising,” “include,” “including” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.” The word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Likewise, the word “connected”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Additionally, the words “herein,” “above,” “below,” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above Detailed Description using the singular or plural number may also include the plural or singular number respectively. The word “or” in reference to a list of two or more items, that word covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.

Moreover, conditional language used herein, such as, among others, “can,” “could,” “might,” “may,” “e.g.,” “for example,” “such as” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or states. Thus, such conditional language is not generally intended to imply that features, elements and/or states are in any way required for one or more embodiments.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosure. Indeed, the novel apparatus, methods, and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the disclosure. For example, while blocks are presented in a given arrangement, alternative embodiments may perform similar functionalities with different components and/or circuit topologies, and some blocks may be deleted, moved, added, subdivided, combined, and/or modified. Each of these blocks may be implemented in a variety of different ways. Any suitable combination of the elements and acts of the various embodiments described above can be combined to provide further embodiments. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosure.

ELEMENT WITH ROUTING STRUCTURE IN BONDING LAYER

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