Claims
- 1. Apparatus for depositing thin films, comprising:
a housing defining a process chamber having one or more walls and a lid; a first heat exchanger coupled to said walls; and a second heat exchanger coupled to said lid; wherein said first and second heat exchangers are configured to maintain said lid at a different temperature than said walls.
- 2. The apparatus of claim 1, wherein at least one of said one or more walls includes one or more heat exchange passages coupled to said first heat exchanger.
- 3. The apparatus of claim 1 wherein said lid includes one or more heat exchange passages coupled to said second heat exchanger.
- 4. The apparatus of claim 1, further comprising:
a gas delivery system configured to introduce gases into said process chamber.
- 5. The apparatus of claim 4, wherein said gas distribution system includes:
a gas distribution manifold attached to said lid.
- 6. The apparatus of claim 5 wherein said gas distribution system further includes a gas distribution face plate fluidly coupled to said gas distribution manifold.
- 7. The apparatus of claim 6 wherein said gas distribution system further includes a blocker plate disposed between said manifold and said faceplate.
- 8. The apparatus of claim 7 wherein said second heat exchanger is configured to maintain said lid at a temperature such that a process gas does not react behind said blocker plate.
- 9. The apparatus of claim 1, further comprising a substrate holder, adapted to hold a substrate during substrate processing.
- 10. The apparatus of claim 9, further comprising a heater, operatively coupled to heat said substrate holder.
- 11. A substrate processing apparatus, comprising:
a housing defining a process chamber having a substrate processing region, a first wall perimetrically surrounding said substrate processing region, and a second wall positioned over said substrate processing region, said first wall comprising a first fluid passage within an interior of said first wall, said second wall comprising a second fluid passage within an interior of said second wall, wherein said first and second passages are not fluidly coupled to each other; a first heat exchanger operatively coupled to maintain fluid within said first fluid passage at a first temperature; and a second heat exchanger operatively coupled to maintain fluid within said second fluid passage at a second temperature.
- 12. The apparatus of claim 1, wherein said second wall is a chamber lid.
- 13. A substrate processing system comprising:
a housing defining a process chamber having one or more walls and a lid; a substrate holder, adapted to hold a substrate during substrate processing; a heater, operatively coupled to heat said substrate holder; a gas delivery system configured to introduce gases into said process chamber; a first heat exchanger coupled to said walls; a second heat exchanger coupled to said lid; wherein said first and second heat exchangers are configured to maintain said lid at a different temperature than said walls; a controller for controlling said gas delivery system and said heater; and a memory coupled to said controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said controller, said computer-readable program including
a first set of instructions to control said first heat exchanger to maintain said walls at a first temperature; a second set of instructions to control said second heat exchanger to maintain said second heat exchanger at a second temperature different from said first temperature; and a third set of instructions to control said gas delivery system to flow a process gas comprising ozone and an organosilane having at least one silicon-carbon bond into the substrate processing chamber and control said heater to heat the substrate holder to a temperature of between 100-250° C.
- 14. A method for forming an insulation layer over a substrate disposed in a substrate processing chamber having one or more walls and a lid, the method comprising:
flowing a process gas comprising ozone and an organosilane through said lid into the substrate processing chamber; heating the substrate to a temperature of less than about 250° C. to form a carbon-doped silicon oxide layer over the substrate; maintaining the walls at a first temperature; and maintaining the lid at a second temperature.
- 15. The method of claim 14 wherein said first temperature is chosen to optimize a reaction in said process chamber that forms said carbon-doped silicon oxide layer.
- 16. The method of claim 13 wherein said first temperature is between 55 and 100° C.
- 17. The method of claim 14 wherein said second temperature is chosen to inhibit a reaction of said process gas within said lid.
- 18. The method of claim 17 wherein said second temperature is approximately 25° C.
- 19. The method of claim 14 wherein the substrate is heated by a pedestal heater set to a temperature of between 150-200° C.
- 20. The method of claim 14 wherein the organosilane precursor is either tetramethylsilane or trimethylsilane.
- 21. A computer readable storage medium having a computer-readable program embodied therein for directing operation of a substrate processing system including a process chamber having walls and a lid; a substrate holder; a heater, operatively coupled to heat said substrate holder; a gas delivery system configured to introduce gases into said process chamber, a first heat exchanger operatively coupled to said walls, a second heat exchanger operatively coupled to said lid; said computer-readable program including instructions for operating said substrate processing system to form an insulation layer over a substrate disposed in the processing chamber in accordance with the following:
flowing a process gas comprising ozone and an organosilane into the substrate processing chamber; heating the substrate to a temperature of less than about 250° C. to form a carbon-doped silicon oxide layer over the substrate; densifying said carbon-doped silicon oxide layer; maintaining the walls at a first temperature; and maintaining the lid at a second temperature.
Priority Claims (1)
Number |
Date |
Country |
Kind |
EP 99402073.3 |
Aug 1999 |
EP |
|
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is related to related to concurrently filed U.S. application Ser. No. 09/______ entitled “THERMAL CVD PROCESS FOR DEPOSITING A LOW DIELECTRIC CONSTANT CARBON-DOPED SILICON OXIDE FILM,” having Li-Qun Xia, Fabrice Geiger, Frederic Gaillard, Ellie Yieh and Tian Lim as coinventors; and to concurrently filed U.S. application Ser. No. 09/______ entitled “SURFACE TREATMENT OF C-DOPED SIO2 FILM TO ENHANCE FILM STABILITY DURING O2 ASHING,” having Li-Qun Xia, Frederic Gaillard, Ellie Yieh and Tian H. Lim as coinventors; and to concurrently filed U.S. application Ser. No. 09/______ entitled “METHOD AND APPARATUS TO ENHANCE PROPERTIES OF Si—O—C LOW K FILMS,” having Li-Qun Xia, Frederic Gaillard, Ellie Yieh and Tian H. Lim as coinventors; and to concurrently filed U.S. application Ser. No. 09/______ entitled “POST-DEPOSITION TREATMENT TO ENHANCE PROPERTIES OF Si—O—C LOW K FILMS,” having Li-Qun Xia, Frederic Gaillard, Ellie Yieh and Tian H. Lim as coinventors. Each of the Ser. Nos. 09/______, 09/______, 09/______ and 09/______ applications listed above are assigned to Applied Materials, Inc., the assignee of the present invention and each of the above-referenced applications are hereby incorporated by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09633798 |
Aug 2000 |
US |
Child |
10291296 |
Nov 2002 |
US |