Claims
- 1. An insulation film coated wire bonding method for repeating steps of producing a discharge through a predetermined discharge gap between a front end of a first portion of an insulation film coated wire wound on a wire spool and drawn out through a bonding capillary and a discharge electrode by an output voltage of a discharge voltage generator for producing a ball on the front end of the wire, and then pressing the ball against a predetermined bonding position by the bonding capillary to ball bond the first portion of the wire to a first position on a semiconductor device chip, and subsequently wedge bonding a second portion of the wire to a second position outside the semiconductor device chip by the bonding capillary comprising:
- (a) prior to a discharge for the ball formation of the ball bonding electrically determining a voltage drop variation or an electrical parameter corresponding to the voltages drop variation due to a decrease in length of the insulation film coated wire wound on the spool at a discharge for a preceding ball formation; and then
- (b) controlling the output voltage of the discharge voltage generator in accordance with the predetermined voltage drop variation or electrical parameter to maintain an applied voltage across the discharge gap between the discharge electrode and the front end of the wire substantially at a predetermined value at the discharge for the ball formation of the ball bonding.
- 2. A method for wire bonding according to claim 1 further comprising:
- prior to the wedge bonding removing the insulation film of the second portion of the wire by a discharge between the second portion of the wire and the discharge electrode by an output voltage of the discharge generator.
- 3. An insulation film coated wire bonding method for repeating the steps of producing a discharge through a predetermined discharge gap between a front end of a first portion of an insulation film coated wire wound on a wire spool and drawn out through a bonding capillary and a discharge electrode by an output voltage of a discharge voltage generator for producing a ball on the front end of the wire, and then pressing the ball against a predetermined bonding position by the bonding capillary to ball bond the first portion of the wire to a first position on a semiconductor device chip, removing the insulation film of a second portion of the wire by a discharge between the second portion of the wire and the discharge electrode by an output voltage of the discharge voltage generator, and subsequently wedge bonding the second portion of the wire to a second position outside the semiconductor device chip by the bonding capillary comprising:
- (a) prior to a discharge for the removal of the insulation of the wire electrically determining a voltage drop variation or an electrical parameter corresponding to the voltage drop variation due to a decrease in length of the insulation film coated wire wound on the spool at a discharge for a preceding insulation removal; and then
- (b) controlling an output voltage of the discharge voltage generator in accordance with the determined voltage drop variation or the electrical parameter to keep an applied voltage across the discharge gap between the discharge electrode and the first or second portion of the wire at a predetermined value at the discharge for the ball or wedge bonding.
- 4. An insulation film coated wire bonding method for repeating the steps of producing a discharge through a predetermined discharge gap between a front end of a first portion of an insulation film coated wire wound on a wire spool and drawn out through a bonding capillary and a discharge electrode by an output voltage of a discharge voltage generator for producing a ball on the front end of the wire pressing the ball against a predetermined bonding position by the bonding capillary to ball bond the first portion of the wire to the first position on a semiconductor device chip, removing the insulation film of a second portion of the wire by a discharge between the second portion of the wire and the discharge electrode by an output voltage of the discharge voltage generator, and subsequently wedge bonding a second portion of the wire to a second position outside the semiconductor device chip by the bonding capillary comprising:
- (a) prior to a discharge for the removal of the insulation of the wire determining a voltage drop variation or electrical parameter corresponding to the voltage drop variation due to a decrease in length of the insulation film coated wire wound on the spool by forming a closed circuit of a length of the wire on the spool through output terminals of the discharge voltage generator and applying a voltage to the closed circuit; and then
- (b) controlling the output voltage of the discharge voltage generator in accordance with the predetermined voltage drop variation or electrical parameter corresponding thereto to keep an applied voltage across the discharge gap between the discharge electrode and the first or second portion of the wire substantially at a predetermined value at a discharge for ball or wedge bonding.
Priority Claims (2)
| Number |
Date |
Country |
Kind |
| 63-299936 |
Nov 1988 |
JPX |
|
| 1-33426 |
Feb 1989 |
JPX |
|
Parent Case Info
This is a divisional application of U.S. Ser. No. 07/442,149, filed on Nov. 28, 1989, now U.S. Pat. No. 5,037,023.
US Referenced Citations (2)
| Number |
Name |
Date |
Kind |
|
4476366 |
Kurtz et al. |
Oct 1984 |
|
|
4950866 |
Kojima et al. |
Aug 1990 |
|
Foreign Referenced Citations (6)
| Number |
Date |
Country |
| 60-3134 |
Jan 1985 |
JPX |
| 60-158637 |
Aug 1985 |
JPX |
| 62-254441 |
Nov 1987 |
JPX |
| 63-182828 |
Jul 1988 |
JPX |
| 63-182829 |
Jul 1988 |
JPX |
| 63-187639 |
Aug 1988 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
| Parent |
442149 |
Nov 1989 |
|