Microelectronic packages having an array of resilient leads and methods therefor

Information

  • Patent Grant
  • 6589819
  • Patent Number
    6,589,819
  • Date Filed
    Wednesday, September 19, 2001
    23 years ago
  • Date Issued
    Tuesday, July 8, 2003
    21 years ago
Abstract
A method of making a microelectronic package having an array of resilient leads includes providing a first element having a plurality of conductive leads at a first surface thereof, the conductive leads having terminal ends permanently attached to the first element and tip ends remote from the terminal ends, the tip ends being movable relative to the terminal ends. A second element having a plurality of contacts on a first surface thereof is then juxtaposed with the first surface of the first element, and the tip ends of the conductive leads are connected with the contacts of the second microelectronic element. The first and second elements are then moved away from one another so as to vertically extend the conductive leads between the first and second elements. After the moving step, a layer of a spring-like conductive material is formed over the conductive leads to form composite leads. The layer of a spring-like material desirably has greater yield strength than the conductive leads, thereby enhancing the resiliency of the composite lead structure.
Description




FIELD OF THE INVENTION




The present invention relates to microelectronic packages having leads or traces and specifically relates to microelectronic packages having arrays of resilient leads and methods of making such microelectronic packages.




BACKGROUND OF THE INVENTION




Complex microelectronic devices such as semiconductor chips typically require numerous connections to other electronic components. For example, a complex device including a semiconductor chip may require hundreds of electrical connections between the chip and one or more external devices. These electrical connections may be made using several alternative methods, including wire bonding, tape automated bonding and flip-chip bonding. Each of these techniques presents various problems including difficulty in testing the chip after bonding, long lead lengths, large areas occupied by the chip on a microelectronic assembly, and fatigue of the connections due to changes in size of the chip and the substrate during thermal expansion and contraction.




In many microelectronic devices, it is desirable to provide an electrical connection between components that can accommodate relative movement between the components. For example, where a semiconductor chip is mounted to a circuit board, thermal expansion and contraction of the chip and circuit board can cause the contacts on the chip to move relative to contacts on the circuit board. This movement can occur during operation of the device and can also occur during manufacturing operations (e.g. when soldering the chip to the circuit board).




One structure that has been used to successfully address these problems is commonly referred to as an “interposer” or “chip carrier”, such as that shown in certain preferred embodiments of commonly assigned U.S. Pat. Nos. 5,148,265, 5,148,266 and 5,455,390, the disclosures of which are hereby incorporated by reference herein. Interposers typically include a flexible, sheet-like element having a plurality of terminals disposed thereon, and including flexible leads used to connect the terminals with contacts on a microelectronic element, such as a semiconductor chip or wafer. The flexible leads permit thermal expansion of the various components without inducing stresses in the connection. The terminals of the interposer may then be used to test the assembly, and/or permanently attach the assembly to another microelectronic element.




A compliant layer may be disposed between a microelectronic element and the interposer. The compliant layer typically encapsulates the leads connecting the interposer and microelectronic element and facilitates connection of the terminals to a test device and/or to the final electronic assembly by compensating for variations in component flatness and terminal heights.




As illustrated in certain preferred embodiments of commonly assigned U.S. Pat. No. 5,518,964 (“the '964 patent”), the disclosure of which is hereby incorporated by reference herein, an array of moveable electrical connections between two microelectronic elements, such as a semiconductor chip and a substrate, can be provided by first connecting leads between the microelectronic elements and then moving the elements away from one another through a predetermined displacement so as to bend the leads. One of the microelectronic elements may be a connection component including a dielectric body having leads extending along a surface of the dielectric body. The leads may have first ends permanently attached to the dielectric body and second ends releasably attached to the dielectric body. The dielectric body, with the leads thereon, may be juxtaposed with a semiconductor chip having contacts and the second releasable ends of the leads may be bonded to the contacts on the chip. Following bonding, the dielectric body and chip are moved away from one another, thereby bending the leads toward a vertically extensive disposition. During or after movement, a curable material such as a liquid composition may be introduced between the elements. The curable material may then be cured, such as by using heat, to form a compliant dielectric layer surrounding the leads. The resulting semiconductor chip package has terminals on the dielectric body or connection component which are electrically connected to the contacts on the chip, but which can move relative to the chip so as to compensate for thermal effects. For example, the semiconductor chip package may be mounted to a circuit board by solder-bonding the terminals to conductive pads on the circuit board. Relative movement between the circuit board and the chip due to thermal effects is allowed by the moveable interconnection provided by the leads and the compliant layer.




In other embodiments of the '964 patent, the package-forming process can be conducted on a wafer scale, so that all of the semiconductor chips in a wafer may be connected to connection components in a single step. The resulting wafer package is then severed so as to provide individual units, each including one or more of the chips and a portion of the dielectric body. The above-described leads may be formed on the chip or wafer, rather than on the dielectric body. In further embodiments of the '964 patent, a dielectric body having terminals and leads is connected to terminal structures on a temporary sheet. The temporary sheet and dielectric body are moved away from one another so as to vertically extend the leads, and a curable liquid material is introduced around the leads and cured so as to form a compliant layer between the temporary sheet and the dielectric body. The temporary sheet is then removed, leaving the tip ends of the terminal structures projecting from a surface of the compliant layer. Such a component, commonly referred to as a connection component, may be used between two other components. For example, the terminal structures may be engaged with a semiconductor chip and the terminals engaged with a circuit panel or other microelectronic component.




In certain preferred embodiments of commonly assigned U.S. Pat. No. 6,117,694, the disclosure of which is hereby incorporated herein by reference, a microelectronic component, such as a connector or a packaged semiconductor device, is made by connecting multiple leads between a pair of elements and moving the elements away from one another so as to bend the leads toward a vertically extensive disposition. One of the elements may include a temporary support that may be removed after bending the leads




After the leads interconnect the microelectronic elements, an encapsulant, such as a flowable, curable dielectric material, may be injected between the microelectronic elements. The encapsulant may be injected between the microelectronic elements immediately after bonding, whereby the force of the pressurized encapsulant acting on the elements separates them and bends the leads, forming a compliant lead configuration. Alternatively, the leads may be formed before injecting the encapsulant by retaining the elements against moveable platens by vacuum, and moving the platens with respect to each other, bending and forming the leads. The encapsulant is then injected while the dielectric sheet and the wafer are in their displaced positions.




After the flowable, curable dielectric material has been cured, the microelectronic assembly may be removed from the fixture, trimmed and tested. The fixture may then be reused to perform the above operations on the next microelectronic assembly.




Despite these and other advances in the art, still further improvements would be desirable.




SUMMARY OF THE INVENTION




In accordance with certain preferred embodiments of the present invention, a method of making a microelectronic package having an array of resilient leads includes providing a first element having a plurality of conductive leads on a first surface thereof. The conductive leads preferably have terminals ends permanently attached to the first element and tip ends remote from the terminal ends, the tip ends of the conductive leads being movable relative to the terminal ends. The method preferably includes providing a second element having a plurality of contacts on a first surface thereof and juxtaposing the first surface of the second element with the first surface of the first element. The tip ends of the conductive leads may then be connected with the contacts of the second microelectronic element. The first and second microelectronic elements may then be moved away from one another so as to vertically extend the conductive lead between the first and second microelectronic elements. After the moving step, a layer of a spring-like material may then be formed over the conductive leads. The layer of a spring-like material preferably has greater yield strength than the conductive leads. Although the present invention is not limited by any particular theory of operation, it is believed that providing a layer of a spring-like material having greater yield strength then the yield strength of the conductive leads produces a highly resilient composite lead able to withstand substantial flexing and bending. As used herein, the term “composite lead” means a conductive lead or trace having a core made of a first conductive material that is coated by a shell of a second conductive material.




The conductive leads may be made of a material selected from the group consisting of aluminum, gold, copper, tin, and their alloys and combinations thereof. The layer of a spring-like material formed over the conductive leads is preferably selected from the group consisting of nickel, copper, cobalt, iron, gold, silver, platinum, noble metals, semi-noble metals, tungsten, molybdenum, tin, leads, bismuth, indium, their alloys, and combinations thereof.




In certain preferred embodiments, the method includes depositing a curable liquid encapsulant between the first and second microelectronic elements and around the vertically extended composite leads. In preferred embodiments, the curable liquid encapsulant is selected from the group consisting of materials that are curable to elastomers and adhesives. The preferred elastomers and adhesives are selected from the group consisting of silicones and epoxies. In highly preferred embodiments, the curable liquid encapsulant is a composition which is curable to a silicone elastomer. After the curable liquid encapsulant is deposited, the encapsulant may be cured to provide a compliant layer between the first and second microelectronic elements and around the vertically extended leads. In preferred embodiments, the terminals are accessible at the second surface of the second microelectronic element. Conductive elements, such as solder balls, may then be attached to the terminals ends of the leads. The conductive elements may be fusible masses of conductive metal, such as tin/lead solder balls.




In preferred embodiments, the first element and/or the second element is a microelectronic element. In preferred embodiments, the microelectronic elements are selected from the group consisting of a semiconductor chips, semiconductor wafers, packaged semiconductor chips or wafers, dielectric sheets, flexible substrates, flexible circuitized substrates, printed circuit boards, and sacrificial layers. In more preferred embodiments, the first and second microelectronic elements are selected from the group consisting of semiconductor chips, semiconductor wafers, and flexible substrates. In particularly preferred embodiments, the first microelectronic element is a chip and the second microelectronic element is a flexible substrate. In certain embodiments, at least one of the microelectronic elements may be a sacrificial layer. The sacrificial layer may be removed during one step of an assembly process so as to expose either the terminal ends or the tip ends of the conductive leads. In an alternative embodiment, the sacrificial layer may be conductive and the terminal ends or the tips ends of the conductive leads may be formed and/or exposed by removing a portion of the conductive sacrificial layer.




In other embodiments, a method of making a microelectronic package having a plurality of resilient leads includes providing a first microelectronic element having conductive leads extending along a first surface thereof, the conductive leads having terminal ends permanently attached to the first microelectronic element and tip ends releasably secured to the first microelectronic element. A second microelectronic element having contacts on a first surface thereof, may then be juxtaposed with the first surface of the first microelectronic element and the tip ends of the conductive leads may be connected with the contacts of the second microelectronic element. The first and second microelectronic elements may then be moved away from one another so as to vertically extend the conductive leads between the first and second microelectronic elements. In certain preferred embodiments, the tip ends of the conductive leads may be releasably secured to the first microelectronic element. After the moving step, a layer of a spring-like material may be formed over the conductive leads. The layer of a spring-like material may be formed by plating a conductive metal over the conductive leads. The conductive metal plated over the conductive leads preferably has a higher yield strength than the conductive leads. A curable liquid encapsulant may then be disposed between the first and second microelectronic elements and around the conductive leads. The curable liquid encapsulant may be cured to form a compliant layer between the microelectronic elements and around the leads.




In still other preferred embodiments of the present invention, a method of making a microelectronic package includes providing a first microelectronic element having a first surface with a plurality of conductive leads formed thereon, each lead having a first end permanently attached to the first microelectronic element and a second end movable away from the first microelectronic element. A second microelectronic element having conductive pads accessible at a first surface thereof may then be provided and the first surface of the first microelectronic element may be juxtaposed with the first surface of the second microelectronic element. The method may also include attaching the second ends of the conductive leads with the conductive pads or contacts of the second microelectronic element. After the attaching step, the first and second microelectronic elements may be moved away from one another so as to vertically extend the conductive leads. After the moving step, a layer of a conductive metal may be formed over the conductive leads, the layer of a conductive metal having a greater yield strength then the conductive leads.




In certain preferred embodiments, the first microelectronic element is a flexible substrate, such as a flexible dielectric sheet, and the second microelectronic element is a semiconductor chip or a semiconductor wafer. In other preferred embodiments, the first microelectronic element is a semiconductor chip or wafer and the second microelectronic element is a flexible substrate such as a flexible dielectric sheet. If the first microelectronic element is a wafer, the method may also include severing the semiconductor wafer and the flexible dielectric sheet to provide a plurality of semiconductor packages, whereby each semiconductor package includes at least one semiconductor chip connected to a portion of the flexible dielectric sheet.




In yet other preferred embodiments of the present invention, a method of making semiconductor packages having resilient leads includes providing a semiconductor chip or wafer having a plurality of contacts on a first surface thereof, and providing a flexible dielectric sheet having a plurality of conductive leads over a first surface thereof, whereby each lead has a terminal end permanently attached to the flexible dielectric sheet and a tip end movable away from the first surface of the dielectric sheet. The tip ends of the leads may then be electrically interconnected with the contacts of the wafer. If a wafer is used, then the wafer and the dielectric sheet may then be moved away from one another in a controlled fashion so as to vertically extend the leads. After the wafer and dielectric sheet are moved away from one another, a layer of a spring-like material may be formed over the outer surface of the conductive leads to form composite leads. The spring-like material desirable has a greater yield strength than the yield strength of the conductive leads. A layer of a compliant material may then be disposed between the wafer and the dielectric sheet and around the composite leads. The wafer and the dielectric sheet may then be severed so as to provide a plurality of semiconductor packages, each semiconductor package including at least one semiconductor chip and a portion of the dielectric sheet.




In further preferred embodiments of the present invention, a method of making a microelectronic element includes providing a dielectric sheet having a plurality of conductive leads overlying the first surface of the sheet and a plurality of terminals accessible at a second surface of the sheet, whereby each lead has a first end permanently attached to one of the terminals and a second end movable away from the first surface of the dielectric sheet. The method includes providing a fixture having a first surface and a plurality of contacts accessible at the first surface of the fixture, juxtaposing the first surface of the fixture with the first surface of the dielectric sheet and attaching the second ends of leads with the contacts of the fixture. After the attaching step, the fixture and the dielectric sheet may be moved away from one another so as to vertically extend the leads. A layer of a conductive spring-like material may then be formed over the exterior surface of the conductive leads to form composite leads, and a layer of a curable liquid encapsulant may be provided between the fixture and the dielectric sheet and around the composite leads. The encapsulant may then be cured to form a compliant layer. After the curing step, the fixture may be removed so as to expose the contacts at a top surface of the package.




In yet other preferred embodiments of the present invention, a connection component includes a flexible substrate having a top surface and a bottom surface, and a layer of a compliant dielectric material overlying the top surface of the substrate, the compliant material having a top surface remote from the substrate. The connection component includes an array of flexible, conductive leads having first ends attached to terminals accessible at the second surface of the said substrate and second ends adjacent the top surface of the compliant layer. Each lead preferably includes a core made of a first conductive material that is surrounded by a layer of a second conductive material. Such leads are similar to the composite leads described above. The second conductive material of the lead preferably has a greater yield strength than the first conductive material. The second ends of the leads may be accessible at the tope surface of the compliant layer. The connection component may also include contacts attached to the second ends of the leads, the contacts being accessible at the top surface of the compliant layer.




These and other preferred embodiments of the present invention will be set forth in further detail below.











BRIEF DESCRIPTION OF THE DRAWINGS





FIGS. 1A-1G

show a method of making a microelectronic package having an array of resilient leads, in accordance with one preferred embodiment of the present invention.





FIGS. 2A-2I

show a method of making microelectronic packages having arrays of resilient leads, in accordance with further preferred embodiments of the present invention.





FIGS. 3A-3H

show a method of making a compliant connection component having an array of resilient leads, in accordance with still further preferred embodiments of the present invention.





FIG. 4

shows leads having tip ends releasably attached to a substrate, in accordance with preferred embodiments of the present invention.





FIG. 5

shows leads having tip ends releasable attached to a substrate, in accordance with other preferred embodiments of the present invention.





FIG. 6

shows a variety of leads formed atop a substrate, in accordance with still other preferred embodiments of the present invention.





FIG. 7

shows leads shown and restraining straps formed atop a substrate, in accordance with further preferred embodiments of the present invention.





FIG. 8

shows leads formed atop a substrate, in accordance with still further preferred embodiments of the present invention.





FIG. 9

shows leads formed atop a substrate in accordance with yet further preferred embodiments of the present invention.











DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS




Referring to

FIG. 1A

, a substrate


20


includes a first surface


22


and a second surface


24


remote therefrom. Although substrate


20


may be rigid, semi-rigid or flexible, in preferred embodiments substrate


20


is flexible, such as a flexible dielectric sheet. The flexible substrate


20


includes a plurality of flexible conductive leads


26


formed on the first surface


22


thereof. The flexible conductive leads


26


may be made from a wide variety of materials, including gold, aluminum, copper, their alloys, and combinations thereof. Each conductive lead


26


desirable includes a terminal end


28


permanently secured to flexible substrate


20


and a tip end


30


remote from the terminal end. As will be described in more detail below, the tip ends


30


of the leads


26


are preferably releasably attached to and movable away from the top surface


22


of flexible substrate


20


. The terminal end


28


of each lead


26


is preferably aligned with an opening


32


extending between the first and second surfaces


22


,


24


of flexible substrate


20


. In preferred embodiments, the flexible substrate


20


is comprised of a sheet of a dielectric material, more preferably of a sheet of a polymeric dielectric material. In particularly preferred embodiments, flexible substrate


20


is comprised of a sheet of polyamide.




As will be described in more detail below, the flexible substrate


20


is preferably assembled to another microelectronic element. Referring to

FIG. 1B

, one such microelectronic element is a semiconductor wafer


34


having a contact bearing face


36


including a plurality of contacts


38


formed on the contact bearing face, and a rear face


40


remote from contact bearing face


36


. The plurality of contacts


38


are preferably positioned in an array over contact bearing face


36


of wafer


34


. When semiconductor wafer


34


is positioned over the first surface


22


of flexible substrate


20


, the contacts


38


are preferably placed in substantial alignment with the tip ends


30


of conductive leads


26


.




Referring to

FIG. 1C

, the contact bearing face


36


of semiconductor wafer


34


is then juxtaposed with the first surface


22


of flexible substrate


20


so that contacts


38


are in substantial alignment with tip ends


30


of conductive leads


26


. A conductive paste (not shown) may be applied to the tip ends


30


of conductive leads


26


in order to temporarily attach contacts


38


to the tip ends


30


. The leads


26


may be permanently attached to contacts


38


by bonding the tip ends


30


of leads


26


to contacts


38


.




The tip ends


30


of the conductive leads


26


are preferably peelable or releasable from the first surface


22


of flexible substrate


20


. Adhesion between the flexible substrate


20


and the tip ends


30


of leads


26


may be reduced by using the methods disclosed in commonly assigned U.S. Pat. No. 5,763,941; and U.S. patent applications Ser. No. 09/020,750; 09/200,100; 09/225,669; 09/566,273; 09/577,474; 09/317,675; and 09/757,968, the disclosures of which are hereby incorporated by reference herein. For example, prior to forming the conductive leads


26


atop the flexible substrate


20


, an adhesion reducing substance such as silicone may be provided over the first surface


22


of substrate


20


for reducing the level of adhesion between tip ends


30


and substrate


20


. In the particular embodiment shown in

FIGS. 1A-1C

, the tip ends


30


of leads


26


are commonly referred to as being releasable and the terminal ends


28


of leads


26


are commonly referred to as being fixed. In embodiments where the substrate is made of a polymeric material, there may be no need to take affirmative steps to enhance peelability between leads


26


and flexible substrate


20


because poor adhesion generally results between leads


26


and polymeric layers.




Referring to

FIG. 1D

, after leads


26


are attached to contacts


38


, the semiconductor wafer


34


and the flexible substrate


20


are moved away from one another through a controlled displacement using platens


40


,


42


as disclosed in commonly assigned U.S. Pat. No. 5,801,441, the disclosure of which is hereby incorporated by reference herein. A vacuum is preferably applied through platen


40


for firmly holding semiconductor wafer


34


and through platen


42


for firmly holding flexible substrate


20


. One or both of the platens are moved so that semiconductor wafer


34


moves vertically away from flexible substrate


20


in the direction indicated by arrow V


1


. At the same time, platen


40


and semiconductor wafer


34


may be moved horizontally relative to platen


42


and flexible substrate


20


in a horizontal direction indicated H


1


. Stated another way, flexible substrate


20


may also be moved in a horizontal direction such that the horizontal component of motion of the flexible substrate


20


is in a second direction H


2


, opposite the first horizontal direction H


1


. Thus, the semiconductor wafer


34


and the tip ends


30


of the leads


26


move, relative to the flexible substrate


20


and the terminal ends


28


of leads


26


, along the direction indicated by A


1


. The vertical movement typically is about 100-500 microns, and the horizontal movement is typically approximately equal to the vertical movement. During the controlled movement, the tip ends


30


of the leads


26


peel away from the first surface


22


of the flexible substrate


20


. The terminal ends


28


of the lead


26


remain fixed to the flexible substrate


20


. During movement of the semiconductor wafer


34


and the flexible substrate


20


away from one another, the leads


26


deform and/or bend in a vertical direction away from the flexible substrate


20


and the terminal ends


28


thereof.




When the wafer


34


is moved in the direction indicated by A


1


, the net effect of the relative movement of the semiconductor wafer


34


and the flexible substrate


20


is to move the tip ends


30


of conductive lead


26


horizontally towards and vertically away from the terminal ends


28


of the same leads, thus forming each flexible lead


26


into a vertically extensive, curved structure as illustrated in FIG.


1


D. Such a lead structure is able to flex and bend so as to compensate for movement of wafer


34


and substrate


20


relative to one another. In other embodiments, the movement of the semiconductor wafer


34


and flexible substrate


20


may not include a horizontal component, but only a vertical component. In these embodiments, the vertical movement will serve to partially straighten the leads


26


. In preferred embodiments, some slack is left in the vertically extended leads


26


so as to allow for subsequent movement of wafer


34


and substrate


20


relative to one another.




Referring to

FIG. 1E

, after the semiconductor wafer


34


and flexible substrate


20


have been moved away from one another so as to vertically extend leads


26


, a spring-like material preferably is formed over the outer surface of leads


26


. The layer of spring-like material


44


preferably has substantially higher yield strength than the material comprising the flexible lead


26


. In preferred embodiments, the spring-like material


44


is selected from the group consisting of nickel, copper, cobalt, iron, tin, lead, bismuth, indium, gold, silver, platinum, tungsten, molybdenum, semi-noble metals, their alloys, and combinations thereof. The layer of spring-like material may be electroplated or may be formed by sputtering, chemical vapor deposition or combinations of any of the above methods. Although the present invention is not limited by any particular theory of operation, it is believed that the formation a layer of a spring-like material over vertically extended conductive leads


26


will substantially enhance the resiliency of the composite leads


46


.




Referring to

FIG. 1F

, after forming the layer of a spring-like material


44


around leads


26


, an encapsulant


48


such as a curable liquid material is preferably introduced between semiconductor wafer


34


and flexible substrate


20


and around composite leads


46


. Preferred methods for disposing an encapsulant layer between microelectronic elements are disclosed in certain preferred embodiments of the above-mentioned U.S. Pat. No. 5,801,441. The encapsulant preferably has a low viscosity and is introduced in an uncured state. The encapsulant


48


preferably wets to the semiconductor wafer


34


and flexible substrate


20


, effectively fills a gap therebetween and penetrates between composite leads


46


. The encapsulant may be rigid or compliant. In preferred embodiments, the encapsulant


48


is selected so that it will form a compliant material, such as a gel or an elastomer, upon being cured. Preferred encapsulants include silicones and epoxies, with silicone elastomers and flexiblized epoxies being particularly preferred. In some embodiments, the encapsulant around the composite leads


46


is rigid and the remainder of the encapsulant between semiconductor chip or wafer


34


and flexible substrate


20


is compliant. In still other embodiments, the encapsulant around the composite leads


46


is compliant and the remainder of the encapsulant


48


between semiconductor wafer


34


and flexible substrate


20


is rigid.




In its liquid state, the encapsulant


48


may be injected under pressure. The encapsulant may also be injected without external pressure and allowed to fill the gap between semiconductor wafer


34


and flexible substrate


20


only by capillary action. After being disposed between semiconductor wafer


34


and flexible substrate


20


and around composite leads


46


, the encapsulant is cured in placed. Depending upon the formulation of the encapsulant, such curing may take place spontaneously at room temperature or else may require exposure to energy, such as heat or radiant energy.




Referring to

FIG. 1G

, after encapsulant layer


48


has been cured to provide a compliant or resilient layer between semiconductor wafer


34


and flexible substrate


20


, conductive elements


50


may by attached to the terminal ends


28


of composite leads


46


. The conductive elements


50


are preferably tin/lead solder balls that extend through the openings


32


in the flexible substrate


20


. The conductive elements


50


may be reflowed so as to permanently attach the conductive elements


50


to terminal ends


28


of composite leads


46


. Upon being reflowed, the conductive elements


50


preferably form an intermetallic bond with the terminal ends


28


of the leads


26


. Surface tension may also result in the reflowed conductive elements


50


having a substantially spherical shape. In other preferred embodiments, the conductive elements


50


may include material such as gold and platinum.




Referring to

FIG. 2A

, in accordance with further preferred embodiments of the present invention a first microelectronic component


134


, such as a semiconductor wafer, has a first surface


136


and a second surface


140


remote therefrom. The first surface


136


of semiconductor wafer


134


has a plurality of conductive traces or leads


126


formed thereon. Each conductive lead


126


includes a first end


130


releasably attached to first face


136


and a second end


128


permanently attached to wafer


134


.




Referring to

FIG. 2B

, the front face


136


of wafer


134


is preferably juxtaposed with a flexible substrate


120


. In a particular preferred embodiment shown in

FIG. 2B

, the flexible substrate


120


is a two-metal tape having a first surface


122


and a second surface


124


remote therefrom. The flexible tape


120


includes a series of vias


132


extending between the first and second surfaces


122


,


124


thereof. Each via


132


preferably has a layer of a conductive metal


152


deposited therein. Each layer of conductive material


152


deposited in vias


132


preferably includes a flange region


154


that extends outwardly from the via


132


along the second surface


124


of substrate


120


.




Referring to

FIG. 2C

, the first face


136


of semiconductor wafer


134


is juxtaposed with top surface


122


of flexible tape


120


. The releasable first ends


130


of conductive leads


126


are preferably placed in substantial alignment with the conductive metal


152


deposited in the vias


132


. A portion


154


of metal layer


152


is preferably accessible at the top surface


122


of flexible tape


120


. The wafer


134


is moved toward the top surface


122


of flexible tape


120


until the conductive leads


126


contact the deposited metal


152


accessible at the first surface


122


of flexible tape


120


. Immediately before the first ends


130


of leads


126


contact the metal portion


154


, a conductive paste or adhesive


156


may be applied to the releasable ends


130


of leads


126


. The conductive adhesive allows the leads to be attached to the metal portion


154


.

FIG. 2D

, shows the releasable ends


130


of leads


126


attached to metal portion


154


of the metalized vias


132


.




Referring to

FIG. 2E

, semiconductor wafer


134


and flexible tape


120


are then moved away from one another in a controlled manner using platens


140


and


142


as described above in reference to FIG.


1


D. As semiconductor wafer


134


and flexible tape


120


move away from one another, conductive leads


126


are vertically extended.




Referring to

FIG. 2F

, a layer of a spring-like material, such as nickel, is then formed over the exterior surface of each conductive lead


126


. As mentioned above, the layer of spring-like material


144


preferably has a relatively higher yield strength than the yield strength of the conductive leads


126


. Together, the conductive leads


126


with the layer of a spring-like material formed thereon comprise composite leads


146


.




Referring to

FIG. 2G

, after composite leads


146


have been formed, a curable encapsulant may then be disposed between the front face


136


of semiconductor wafer


134


and the first surface


122


of flexible tape


120


. As mentioned above, the curable encapsulant is preferably disposed between the wafer and tape while the curable encapsulant is in a liquid form. The encapsulant may then be cured in situ by applying energy or exposing the encapsulant to atmosphere. The cured encapsulant layer is preferably compliant so as to compensate for thermal expansion and contraction of the wafer


134


and substrate


120


during assembly and operation of the microelectronic package.




Referring to

FIG. 2H

, conductive elements


150


such as solder balls may be then attached to the metalized vias


132


. The conductive elements are then preferably reflowed to permanent attach the conductive elements to the metalized vias. During reflow, surface tension preferably reshapes the outer surface of the conductive elements so that the conductive elements have a substantially spherical shape as shown in FIG.


2


H. After conductive elements


150


have been attached, the microelectronic package of


2


H may be electrically interconnected with another element via the conductive elements


150


.




Referring to

FIG. 2I

, the microelectronic assembly of

FIG. 2H

may be severed to provide a plurality of microelectronic packages having an array of resilient leads. As shown in

FIG. 2I

, semiconductor wafer


134


, encapsulant layer


148


and flexible tape


120


are severed to provide microelectronic packages


160


A and


160


B. Although only two microelectronic packages are shown in

FIG. 2I

, the wafer


134


may be severed to provide a plurality of microelectronic packages (e.g., 100-200 chip packages or more). Each microelectronic package desirable includes at least one semiconductor chip


162


, a portion of flexible tape


120


and an array of resilient leads


146


that electrically interconnect chip


162


with conductive elements


150


. As such, the microelectronic packages


160


A,


160


B may be electrically interconnected with other elements such as a test socket, a circuitized substrate or a printed circuit board. During operation of the microelectronic packages


160


A and


160


B, the various components will typically heat up. As the components heat up, the components may expand at different rates due to differences in coefficients of thermal expansion. However, the resilient nature of composite leads


146


, encapsulant layer


148


, and flexible tape


120


will allow the semiconductor chip


162


move relative to substrate


120


so as to remain electrically interconnected with conductive elements


150


.





FIGS. 3A-3H

show yet another preferred embodiment of a method of making a microelectronic package having an array of resilient leads. Referring to

FIG. 3A

, a substrate


220


, such as a two metal flexible tape, has a first surface


222


and a second surface


224


remote therefrom. The two metal tape


220


includes a plurality of conductive leads


226


formed thereon. Each conductive leads


226


has a first end


230


releasable secured to the first surface


222


of two metal tape


220


and a second or terminal end


228


permanently fixed to two metal tape


220


. The terminal end


228


of conductive leads


226


overlie through vias


232


, then through vias


232


extending between the first and second surfaces


222


,


224


of two metal tape


220


.




Referring to

FIG. 3B

, a fixture such as a sacrificial layer may then be juxtaposed with two metal tape


220


. Fixture


234


includes contact bearing surface


236


having a plurality of contacts


238


formed thereon and a back surface


240


remote therefrom. Referring to

FIG. 3C

, fixture


234


may be juxtaposed with two metal tape


220


so that contacts


238


are in substantial alignment with the releasable ends


230


of leads


226


. Contacts


230


are preferably permanently attached to releasable tip ends


230


of conductive leads


226


, such as by using a bonding process or a conductive adhesive.




Referring to

FIG. 3D

, in order to move fixture


234


and tape


220


away from one another, platens


240


and


242


are preferably abutted against fixture


234


and two metal tape


220


, respectively. As described above, platens


240


,


242


are used to controllably move fixture


234


and two metal tape


220


away from one another in a vertical direction. Fixture


234


and substrate


220


may also be moved relative to one another in a horizontal direction. As fixture


234


and two metal tape


220


move away from one another, conductive leads


226


are extended in a substantially vertical direction.




Referring to

FIG. 3E

, a layer of a spring-like material


244


may then be deposited over the exterior surface of conductive leads


226


to form composite leads


246


. As mentioned above, the formation of a layer of a spring-like material


244


over conductive leads


226


improves the overall resilience of the final structure, i.e., composite lead


246


. This improved resiliency enhances the ability of the lead to maintain an electrical interconnection between microelectronic elements during thermal cycling.




Referring to

FIG. 3F

, a layer of a curable liquid material


248


is then preferably deposited between fixture


234


and two metal tape


220


and around composite leads


246


. In preferred embodiments, the layer of curable material


248


may then be cured to provide a compliant material that enables the composite leads


246


to flex and bend during thermal cycling.




Referring to

FIG. 3G

, the fixture


234


may then be removed to transform the subassembly into a connection component. In certain embodiments the fixture


234


is completely removed, such as by exposing the subassembly to a chemical etchant. In other embodiments, the fixture may be comprised of a conductive material and may be provided without contacts


238


. Portions of the conductive fixture may then be removed. The remaining portions form contacts in the tip ends of the leads. After fixture


234


has been removed, contacts


238


are exposed at a top surface of encapsulant layer


248


. As mentioned above, the subassembly shown in

FIG. 3G

may be used as a compliant connection component


292


that can electrical interconnect two or more microelectronic elements. In certain embodiments, the contacts of a first microelectronic element may be connected with the contacts


238


exposed at a top surface of encapsulant layer


248


. In turn, contacts of a second microelectronic element may be permanently or temporarily attached to terminals exposed at the second surface


224


of two metal tape


220


.




In

FIG. 3H

, a test fixture


270


having conductive elements


272


at a top surface thereof, is utilized to test the subassembly shown in FIG.


3


G. The conductive elements


272


of the test fixture are preferably provided in a spaced array, the conductive elements


272


matching the alignment of terminals


290


of connection component


292


. After connection component


292


has been positioned atop test fixture


270


, a microelectronic element or other electronic element having contacts may be juxtaposed with the contacts


238


at the top of compliant layer


248


, thereby allowing the connection component to be tested and evaluated. Alternatively or additionally, connection component


292


may be used to permanently connect two microelectronic elements.




Referring to

FIGS. 4 and 5

, the leads shown and described above may be arranged in many different ways on wafers, flexible substrates, flexible tapes and other microelectronic elements. For example, referring to

FIG. 4

, each lead


326


its initial undeformed state, may include an S-shaped strip


380


extending between the terminal ends


328


and tip ends


330


thereof. The S-shaped lead structures may be nested as shown in

FIG. 4

with the terminal ends


328


deposed in rows and the tip ends


330


deposed in similar but offset rows. Referring to

FIG. 5

, the leads


426


may also be substantially U-shaped structures having a single bight between the terminal end


428


and tip end


430


of each lead. Structures with plural bights can also be employed. Such leads are shown and described in certain preferred embodiments of commonly assigned U.S. Pat. No. 5,518,964, the disclosure of which is hereby incorporated by reference herein.




The conductive leads may also have the various configurations shown in FIG.


6


and disclosed in the above-mentioned '964 patent, as well as in commonly assigned U.S. Pat. Nos. 5,859,472 and 6,191,368,the disclosures of which are hereby incorporated by reference herein. As a result, any gap


586


surrounding the conductive leads may have correspondingly varied shapes. In each case, the gaps extend alongside the flexible, conductive leads. Lead


526


is in the form of a closed loop


588


connecting the second end


530


of flexible lead with the first end


528


thereof. The closed loop section


588


of lead


526


encircles a central region


590


.




Referring to

FIG. 7

, in still other preferred embodiments, restraining straps


692


, which are shorter and stronger than conductive leads


626


, are connected between two microelectronic elements. Restraining straps


692


may be formed during the same process steps used to make the conductive leads. Such restraining straps are disclosed in commonly assigned U.S. Pat. No. 5,976,913, the disclosure of which is hereby incorporated by reference herein. After leads


626


electrically interconnect two or more microelectronic elements, restraining straps


692


limit movement of the microelectronic elements away from one another so that sufficient slack remains in the flexible, conductive leads


626


.




Referring to

FIG. 8

, in yet further preferred embodiments, the tip end


730


of each lead


726


is connected through a frangible element


794


to the terminal end


728


of the next adjacent lead. The frangible element


794


thus retains each tip end


730


in position, adjacent a surface of a substrate


720


or semiconductor wafer. Frangible element


794


may be formed as a continuation of a strip constituting the lead itself, with V-shaped notches extending in the strip from opposite sides thereof. During the assembly process, the tip ends


730


are bonded to the contacts of a chip or other microelectronic element in the same manner as discussed above. After bonding, the microelectronic element is moved relative to the connector body or dielectric sheet in the same manner as discussed above, so that the tip end


730


of each lead


726


moves vertically away from the body and away from the terminal ends


728


, and so that the tip end


720


also moves toward the associated terminal end


728


. This action breaks the frangible element


794


and hence, releases each tip end from its connection to the next terminal end. Such leads are disclosed are certain preferred embodiments of the '964 patent.




Referring to

FIG. 9

, in still other preferred embodiments of the present invention, the tip ends


830


of each lead


826


is not provided with a bulge, but instead constitutes a continuation of lead


826


. The tip end


830


of the lead is connected to the terminal end


828


of the next adjacent lead by a frangible section


894


. In this component, the dielectric sheet or connector body


820


has holes


832


aligned with the terminal ends


828


of the leads


826


. After connector body


820


and the leads


826


thereon are in alignment with contacts on a microelectronic element or chip, a tool (not shown) is advanced through holes


832


for engaging the tip ends


830


of each lead


826


in succession so as to bond a tip ends


830


to contact. After such bonding, the microelectronic elements or chip may be moved relative to the connector body in the same manner as discussed above. Once again, this movement breaks the frangible section


894


between the tip end of each lead and terminal end


828


of the adjacent lead, thus releasing the tip ends


830


and allowing the leads to bend away from the connector body. Before or after the movement step, holes


832


may be closed by application of a further film or sheet on the top surface of the dielectric layer.




Although the present invention has been described with reference to particular preferred embodiments, it is to be understood that the embodiments are merely illustrative of the principle and application of the present invention. It is therefor to be understood that numerous modifications may be made to the preferred embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the claims.



Claims
  • 1. A method of making a microelectronic package having an array of resilient leads comprising:providing a first element having a plurality of conductive leads at a first surface thereof, said conductive leads having terminal ends permanently attached to said first element and tip ends remote from the terminal ends, the tip ends of said conductive leads being movable relative to said terminal ends; providing a second element having a plurality of contacts on a first surface thereof and juxtaposing the first surface of said second element with the first surface of said first element; connecting the tip ends of said conductive leads with the contacts of said second element; moving said first and second elements away from one another so as to vertically extend said conductive leads between said first and second elements; and after the moving step, forming a layer of a spring-like material over said conductive leads.
  • 2. The method as claimed in claim 1, wherein said conductive leads are made of a material selected from the group consisting of aluminum, gold, copper, tin, their alloys, and combinations thereof.
  • 3. The method as claimed in claim 1, wherein said layer of spring-like material is selected from the group consisting of nickel, copper, cobalt, iron, gold, silver, platinum, noble metals, semi-noble metals, tungsten, molybdenum, tin, leads, bismuth, indium, their alloys, and combinations thereof.
  • 4. The method as claimed in claim 3, wherein said layer of a spring-like material is selected from the group consisting of nickel and nickel alloys.
  • 5. The method as claimed in claim 1, wherein the layer of a spring-like material has a greater yield strength than said conductive leads.
  • 6. The method as claimed in claim 1, further comprising depositing a curable liquid encapsulant between said first and second elements and around said vertically extended leads.
  • 7. The method as claimed in claim 6, further comprising curing said encapsulant to provide a compliant layer between said first and second elements.
  • 8. The method as claimed in claim 6, wherein said curable liquid encapsulant is selected from the group consisting of elastomers and adhesives.
  • 9. The method as claimed in claim 6, wherein said curable liquid encapsulant is curable to a silicone elastomer.
  • 10. The method as claimed in claim 1, wherein said terminals are accessible at the second surface of said second element.
  • 11. The method as claimed in claim 10, further comprising attaching conductive elements to the terminal ends of said leads.
  • 12. The method as claimed in claim 10, wherein said conductive elements comprise solder balls.
  • 13. The method as claimed in claim 1, wherein said first and second elements are selected from the group consisting of a semiconductor chip, a semiconductor wafer, and a flexible circuitized substrate.
  • 14. The method as claimed in claim 13, wherein said first element is a semiconductor chip or wafer and the second element is a flexible circuitized substrate.
  • 15. The method as claimed in claim 13, wherein said second element is a semiconductor chip or wafer and the first element is a flexible circuitized substrate.
  • 16. The method as claimed in claim 1, wherein at least one of said first and second elements is a sacrificial layer.
  • 17. The method as claimed in claim 16, further comprising removing at least a portion of said first element so as to expose the terminal ends of said conductive leads.
  • 18. The method as claimed in claim 17, wherein the first element is a first microelectronic element and the second element is a second microelectronic element.
  • 19. The method as claimed in claim 16, further comprising removing at least a portion of said second element so as to expose the contacts connected to the tip ends of said conductive leads.
  • 20. The method as claimed in claim 1, wherein said first element is a first microelectronic element and said second element is a second microelectronic element.
  • 21. A method of making a microelectronic package having a plurality of resilient leads comprising:providing a first element having conductive leads extending along a first surface thereof, said conductive leads having terminal ends permanently attached to said first element and tip ends releasably secured to said first element; providing a second element having contacts on a first surface thereof and juxtaposing the first surface of said second element with the first surface of said first element; connecting the tip ends of said conductive leads with the contacts of said second element; moving said first and second elements away from one another so as to vertically extend said conductive leads between said first and second elements; and after the moving step, forming a layer of a spring-like material over said conductive leads.
  • 22. The method as claimed in claim 21, wherein the forming a layer of a spring-like material step includes plating a conductive metal over said conductive leads.
  • 23. The method as claimed in claim 21, wherein said layer of a spring-like material has a greater yield strength than said conductive leads.
  • 24. The method as claimed in claim 21, wherein the first element is a first microelectronic element and the second element is a second microelectronic element.
  • 25. The method as claimed in claim 21, further comprising:disposing a curable liquid encapsulant between said first and second microelectronic elements and around said conductive leads; and curing said curable liquid encapsulant to form a compliant layer between said first and second microelectronic elements.
  • 26. The method as claimed in claim 25, wherein said encapsulant is selected from the group consisting on elastomers and adhesives.
  • 27. The method as claimed in claim 21, wherein said first microelectronic element is a flexible substrate and said second microelectronic element includes a semiconductor chip.
  • 28. The method as claimed in claim 21, further comprising attaching conductive elements to the terminal ends of said leads, wherein said conductive elements are accessible at a second surface of said first element.
  • 29. The method as claimed in claim 21, wherein the terminal ends of said conductive leads extend between the first surface and a second surface of said first microelectronic element.
  • 30. A method of making a microelectronic package comprising:providing a first element having a first surface with a plurality of conductive leads formed thereon, each said lead having a first end permanently attached to said first element and a second end movable away from said first element; providing a second element having conductive pads accessible at a first surface thereof and juxtaposing the first surface of said first element with the first surface of said second element; attaching the tip ends of said conductive leads with said conductive pads of said second element; after the attaching step, moving said first and second elements away from one another so as to vertically extend said conductive leads; and after the moving step, forming a layer of a conductive metal over said conductive leads, wherein said layer of a conductive metal has a greater yield strength than said conductive leads.
  • 31. The method as claimed in claim 30, wherein the attaching said tip ends step includes bonding the tip ends of said leads to said conductive pads so as to electrically interconnect said leads and said conductive pads.
  • 32. The method as claimed in claim 30, further comprising after the forming a layer of a conductive material step, providing a curable liquid encapsulant between said microelectronic elements and around said conductive leads and curing said encapsulant to provide a compliant layer.
  • 33. The method as claimed in claim 32, wherein said first microelectronic element is a semiconductor wafer and said second microelectronic element is a flexible dielectric sheet.
  • 34. The method as claimed in claim 33, further comprising severing said semiconductor wafer and said flexible dielectric sheet to provide a plurality of semiconductor packages, each said package including at least one semiconductor chip.
  • 35. The method as claimed in claim 33, wherein the conductive pads of said second microelectronic element are accessible at the first surface and a second surface of said second microelectronic element, the method further comprising attaching conductive elements to the conductive pads of said second microelectronic element, said conductive elements overlying the second surface of said second microelectronic element.
  • 36. A method of making semiconductor packages having resilient leads comprising:providing a first microelectronic element selected from the group consisting of semiconductor chips and semiconductor wafers, wherein said first microelectronic element has a plurality of contacts on a first surface thereof; providing a flexible dielectric sheet having a plurality of conductive leads over a first surface thereof, each said lead having a terminal end permanently attached to said flexible dielectric sheet and a tip end movable away from the first surface of said dielectric sheet; electrically interconnecting the tip ends of said leads to the contacts of said first microelectronic element; moving said first microelectronic element and dielectric sheet away from one another so as to vertically extend said leads; after the moving step, forming a layer of a spring-like material over said leads, wherein the spring-like material has a greater yield strength than the conductive leads.
  • 37. The method as claimed in claim 36, further comprising providing a layer of a compliant material between said first microelectronic element and said dielectric sheet and around said leads.
  • 38. The method as claimed in claim 37, further comprising after the providing a layer of a compliant material step, severing said first microelectronic element and said dielectric sheet to provide a plurality of semiconductor packages, each said semiconductor package comprising at least one semiconductor chip and a portion of said dielectric sheet.
  • 39. A method of making a microelectronic element comprising:providing a dielectric sheet having a plurality of conductive leads overlying a first surface of said sheet and a plurality of terminals accessible at a second surface of said sheet, each said lead having a first end permanently attached to one of said terminals and a second end movable away from the first surface of said dielectric sheet; providing a fixture having a first surface and a plurality of contacts accessible at the first surface of said fixture; juxtaposing the first surface of said fixture with the first surface of said dielectric sheet and attaching the second ends of said leads with the contacts of said fixture; after the attaching step, moving said fixture and said dielectric sheet away from one another so as to vertically extend said leads; forming a layer of a conductive spring-like material over said leads; providing a layer of a curable liquid encapsulant between said fixture and said dielectric sheet and around said leads and curing said encapsulant to form a compliant layer; and after the curing step, removing said fixture so as to expose said contacts at a top surface of said package.
  • 40. The method as claimed in claim 39, further comprising temporarily connecting said contacts at the top surface of said package with the contacts of an element.
  • 41. The method as claimed in claim 40, wherein said microelectronic element is a test fixture.
  • 42. The method as claimed in claim 39, further comprising temporarily connecting the terminals of said dielectric sheet with the contacts of an element.
  • 43. The method as claimed in claim 42, wherein said microelectronic element is a test fixture.
CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims benefit of U.S. Provisional Application No. 60/236,395, filed Sep. 29, 2000, the disclosure of which is hereby incorporated by reference herein.

US Referenced Citations (10)
Number Name Date Kind
5148265 Khandros et al. Sep 1992 A
5148266 Khandros et al. Sep 1992 A
5455390 DiStefano et al. Oct 1995 A
5518964 DiStefano et al. May 1996 A
5763941 Fjelstad Jun 1998 A
5801441 DiStefano et al. Sep 1998 A
5859472 DiStefano et al. Jan 1999 A
5976913 Distefano Nov 1999 A
6117694 Smith et al. Sep 2000 A
6191368 Di Stefano et al. Feb 2001 B1
Provisional Applications (1)
Number Date Country
60/236395 Sep 2000 US