Semiconductor device and method of fabricating the same

Abstract

A semiconductor device capable of preventing an interlayer dielectric film from deterioration resulting from a liquid such as a chemical solution penetrating into the interlayer dielectric film and recovering the interlayer dielectric film from deterioration with a prescribed gas is obtained. This semiconductor device comprises a first insulating film formed on a substrate and a first gas-liquid separation film, formed on at least a part of the surface of the first insulating film, composed of a material hardly permeable by a liquid and easily permeable by a gas.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing the structure of a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a sectional view taken along the line 100-100 in FIG. 1;

FIG. 3 is a sectional view taken along the line 200-200 in FIG. 1;

FIGS. 4 to 6 are sectional views for illustrating a process of fabricating the semiconductor device according to the first embodiment of the present invention; FIG. 7 is a plan view for illustrating the process of fabricating the semiconductor device according to the first embodiment of the present invention;

FIG. 8 is a sectional view taken along the line 300-300 in FIG. 7;

FIG. 9 is a sectional view taken along the line 400-400 in FIG. 7;

FIG. 10 is a sectional view for illustrating the process of fabricating the semiconductor device according to the first embodiment of the present invention;

FIG. 11 is a plan view showing the structure of a semiconductor device according to a second embodiment of the present invention;

FIG. 12 is a sectional view taken along the line 500-500 in FIG. 11;

FIG. 13 is a sectional view taken along the line 600-600 in FIG. 11;

FIGS. 14 to 18 are sectional views for illustrating a process of fabricating the semiconductor device according to the second embodiment of the present invention;

FIG. 19 is a plan view for illustrating the process of fabricating the semiconductor device according to the second embodiment of the present invention;

FIG. 20 is a sectional view taken along the line 700-700 in FIG. 19;

FIG. 21 is a sectional view taken along the line 800-800 in FIG. 19;

FIG. 22 is a sectional view for illustrating the process of fabricating the semiconductor device according to the second embodiment of the present invention;

FIG. 23 is a sectional view showing the structure of a semiconductor device according to a third embodiment of the present invention;

FIG. 24 is a sectional view showing the structure of a semiconductor device according to a fourth embodiment of the present invention;

FIG. 25 is a sectional view showing the structure of a semiconductor device according to a fifth embodiment of the present invention;

FIG. 26 is a sectional view showing the structure of a semiconductor device according to a sixth embodiment of the present invention;

FIGS. 27 and 28 are sectional views showing the structures of samples employed in experiments conducted for confirming effects of the embodiments of the present invention;

FIGS. 29 and 30 are waveform diagrams showing results of FT-IR measurement before and after dipping in a plating solution and washing with pure water;

FIG. 31 is a graph showing leakage currents measured before and after dipping in the plating solution and washing with pure water;

FIG. 32 is a graph showing dielectric constants measured before and after dipping in the plating solution and washing with pure water;

FIG. 33 is a graph showing contact angles of an SiOC film (gas-liquid separation film) with respect to pure water and the plating solution; and

FIG. 34 is a waveform diagram showing results of FT-IR measurement conducted before and after annealing in a TMCT gas atmosphere.

Claims

1. A semiconductor device comprising: a first insulating film formed on a substrate; anda first gas-liquid separation film, formed on at least a part of the surface of said first insulating film, composed of a material hardly permeable by a liquid and easily permeable by a gas.

2. The semiconductor device according to claim 1, further comprising a wiring layer formed on at least said part of the surface of said first insulating film.

3. The semiconductor device according to claim 2, wherein said first insulating film has a first opening for communicating with said part of the surface of said substrate,said first gas-liquid separation film is formed at least either on the inner surface of said first opening of said first insulating film or on the upper surface of said first insulating film opposite to said substrate, andsaid wiring layer is formed inside said first opening of said first insulating film.

4. The semiconductor device according to claim 3, wherein said first gas-liquid separation film is formed on both of the inner surface of said first opening of said first insulating film and the upper surface of said first insulating film opposite to said substrate.

5. The semiconductor device according to claim 3, wherein said first gas-liquid separation film is formed not on the inner surface of said first opening of said first insulating film but on the upper surface of said first insulating film opposite to said substrate.

6. The semiconductor device according to claim 3, wherein said first gas-liquid separation film is formed not on the upper surface of said first insulating film opposite to said substrate but on the inner surface of said first opening of said first insulating film.

7. The semiconductor device according to claim 3, further comprising a barrier metal layer arranged between said wiring layer and said substrate.

8. The semiconductor device according to claim 3, further comprising: a second insulating film formed on said first insulating film, anda second gas-liquid separation film, formed on at least a part of the surface of said second insulating film, composed of a material hardly permeable by a liquid and easily permeable by a gas, whereinsaid second insulating film has a second opening connected to said first opening of said first insulating film,said first gas-liquid separation film and said second gas-liquid separation film are formed at least either on the inner surfaces of said first and second openings or on the upper surfaces of said first and second insulating films opposite to said substrate, andsaid wiring layer is formed inside said first and second openings.

9. The semiconductor device according to claim 8, wherein said first gas-liquid separation film and said second gas-liquid separation film are formed on both of the inner surfaces of said first and second openings and the upper surfaces of said first and second insulating films opposite to said substrate.

10. The semiconductor device according to claim 1, wherein said first gas-liquid separation film includes a gas-liquid separation film composed of SiOC.

11. The semiconductor device according to claim 10, wherein said first gas-liquid separation film has a thickness of at least 5 nm and not more than 15 nm.

12. The semiconductor device according to claim 1, wherein said first insulating film includes a porous insulating film.

13. A method of fabricating a semiconductor device, comprising steps of: forming a first insulating film on a substrate;forming a first gas-liquid separation film composed of a material hardly permeable by a liquid and easily permeable by a gas on at least a part of the surface of said first insulating film;forming a wiring layer on at least said part of the surface of said first insulating film by plating; andrecovering said first insulating film from deterioration by annealing the same in a prescribed gas atmosphere.

14. The method of fabricating a semiconductor device according to claim 13, further comprising a step of forming a first opening for communicating with a part of the surface of said substrate in said first insulating film in advance of said step of forming said first gas-liquid separation film, wherein said step of forming said first gas-liquid separation film includes a step of forming said first gas-liquid separation film at least either on the inner surface of said first opening of said first insulating film or on the upper surface of said first insulating film opposite to said substrate, andsaid step of forming said wiring layer by plating includes a step of forming said wiring layer inside said first opening of said first insulating film.

15. The method of fabricating a semiconductor device according to claim 14, wherein said step of forming said first gas-liquid separation film includes a step of forming said first gas-liquid separation film on both of the inner surface of said first opening of said first insulating film and the upper surface of said first insulating film opposite to said substrate.

16. The method of fabricating a semiconductor device according to claim 14, further comprising a step of forming a barrier metal layer inside said first opening of said first insulating film in advance of said step of forming said wiring layer by plating, wherein said step of forming said wiring layer includes a step of forming said wiring layer on said substrate through said barrier metal layer formed inside said first opening of said first insulating film.

17. The method of fabricating a semiconductor device according to claim 14, further comprising steps of: forming a second insulating film on said first insulating film,forming a second opening connected to said first opening of said first insulating film in said second insulating film, andforming a second gas-liquid separation film composed of a material hardly permeable by a liquid and easily permeable by a gas at least either on the inner surface of said second opening of said second insulating film or on the upper surface of said second insulating film opposite to said substrate,in advance of said step of forming said wiring layer by plating, whereinsaid step of forming said wiring layer includes a step of forming said wiring layer inside said first and second openings.

18. The method of fabricating a semiconductor device according to claim 13, wherein said first gas-liquid separation film includes a gas-liquid separation film composed of SiOC.

19. The method of fabricating a semiconductor device according to claim 18, wherein said first gas-liquid separation film has a thickness of at least 5 nm and not more than 15 nm.

20. The method of fabricating a semiconductor device according to claim 13, wherein said first insulating film includes a porous insulating film.